CN109216435A - Inverse conductivity type insulated gate bipolar transistor and preparation method thereof is isolated in a kind of collector - Google Patents
Inverse conductivity type insulated gate bipolar transistor and preparation method thereof is isolated in a kind of collector Download PDFInfo
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- CN109216435A CN109216435A CN201811002973.3A CN201811002973A CN109216435A CN 109216435 A CN109216435 A CN 109216435A CN 201811002973 A CN201811002973 A CN 201811002973A CN 109216435 A CN109216435 A CN 109216435A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- 238000007667 floating Methods 0.000 claims abstract description 16
- -1 boron ion Chemical class 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 230000002441 reversible effect Effects 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 9
- 230000002829 reductive effect Effects 0.000 abstract description 8
- 230000000903 blocking effect Effects 0.000 abstract description 7
- 238000002955 isolation Methods 0.000 abstract description 7
- 238000011084 recovery Methods 0.000 description 9
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000005404 monopole Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0646—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a kind of collectors, and inverse conductivity type insulated gate bipolar transistor is isolated, including the mos gate polar region, the drift region N- and P set gradually from top to bottom+Collector, P+Collector side is disposed with isolated area and N+Shorting region, isolated area is by P+Collecting zone and N+Shorting region is kept apart；N+Shorting region upper surface is additionally provided with P-stop layers, and the floating field stop layer of N-type is additionally provided in the drift region N-.The invention also discloses a kind of this kind of preparation methods of the inverse conductivity type insulated gate bipolar transistor of collector isolation, and compared with conventional RC-IGBT, under identical structural parameters, blocking characteristics are promoted；Voltage fold-back phenomenon completely eliminates in forward conduction characteristic；Si is used in isolated area of the present invention3N4After material, reverse conduction voltage drop is greatly reduced, therefore has Si3N4A kind of inverse conductivity type insulated gate bipolar transistor of collector isolation of structure is inversely connected power consumption and greatly reduces.
Description
Technical field
The invention belongs to power semiconductor device technical fields, are related to a kind of inverse conductivity type insulated gate bipolar of collector isolation
Transistor, the invention further relates to the preparation methods that inverse conductivity type insulated gate bipolar transistor is isolated in the collector.
Background technique
IGBT be unable to do without freewheeling diode in the application, and IGBT and freewheeling diode, which are usually packaged into module together, makes
With.By IGBT together with freewheeling diode chip package, it can effectively reduce the area of manufacture packaging cost and module.But two
Heat dissipation and switch matching of a chip etc. all have the shortcomings that larger.In order to improve this defect, it reduces cost, improve core
The power density of piece forms RC- by the way that IGBT and diode fabrication on a single die, are realized that monolithic technology is integrated
IGBT。
Conventional RC-IGBT is on the basis of traditional IGBT, and retainer member surface MOS field-effect transistor structure is constant, by P+Collector (also referred to as anode) partially uses N+Shorting region substitution.Electronics is provided for IGBT by MOS structure, drift region provides for IGBT and hits
Wear the required depletion layer of pressure resistance, P+Current collection extremely IGBT provides hole, therefore by P+Collector upper area is known as the area IGBT.Similarly
Anode of the p-well of MOS structure as freewheeling diode, drift region provide breakdown pressure resistance required depletion layer for freewheeling diode, N+Cathode of the shorting region as freewheeling diode, therefore by N+Shorting region upper area is known as freewheeling diode area, in this way can be RC-
The structure of IGBT is divided into the area IGBT and freewheeling diode area.When grid and collector add forward voltage, at this time in RC-IGBT
IGBT starts to work part, integrates freewheeling diode cut-off.When IGBT shutdown, the inductance in inductive circuit passes through RC-IGBT
Integrated freewheeling diode carries out continuous current discharge electricity in vivo, at this time freewheeling diode forward conduction.Therefore RC-IGBT is realized positive and negative
The drift region of IGBT and freewheeling diode to the function that can be connected, and in RC-IGBT are combined into one, moreover it is possible to reduce terminal
Design procedure has saved manufacturing cost.
Fig. 2 is RC-IGBT forward direction and reverse on state characteristic curve, is forward conduction characteristic positioned at first quartile, can be with
Significantly find out, there are negative resistance effects when voltage fold-back phenomenon, i.e. forward conduction in forward conduction characteristic.Third quadrant is
The reverse on state characteristic curve of RC-IGBT.As can be seen that RC-IGBT has reverse ducting capacity in Fig. 2.RC-IGBT voltage folding
Return phenomenon occur basic reason, be from forward conduction during monopole type mode work MOSFET work to ambipolar mode
IGBT switching when caused by.It is conductive that monopole type mode only has the electronics in MOSFET to participate in, and current density is small, break-over of device
Pressure drop is higher, and the existing electronics of ambipolar operating mode participates in conduction, and there have hole to participate in be conductive, and working current density is big,
Forward conduction voltage drop is relatively small.When both modes switch, voltage fold-back phenomenon is just generated.Voltage fold-back phenomenon and RC-
Layer doping concentration has direct relationship to the collector layout design and field stop layer (Field Stop, FS) of IGBT, is to be connected
Unfavorable factor in journey should be suppressed or eliminate.Otherwise RC-IGBT chip conducting electric current in parallel can be caused to be unevenly distributed,
So that device opening time disunity, current convergence flow to one single chip, causes chip current excessive and be burned out.
Summary of the invention
The present invention provides a kind of inverse conductivity type insulated gate bipolar transistor of collector isolation, and traditional RC- can be effectively suppressed
Voltage fold-back phenomenon in IGBT, while transistor has lower turn-off power loss.
It is a further object to provide the preparation methods that inverse conductivity type insulated gate bipolar transistor is isolated in collector.
The first technical solution of the present invention is, including set gradually from top to bottom mos gate polar region, N- drift
Area and P+Collector, P+Collector side is disposed with isolated area and N+Shorting region, isolated area is by P+Collecting zone and N+Shorting region
Keep apart；N+Shorting region upper surface is additionally provided with P-stop layers, and the top surface of isolated area is generally aligned in the same plane with P-stop layers of top surface,
The top surface of isolated area is located in the drift region N-, and the floating field stop layer of N-type, P-stop layers and isolated area are additionally provided in the drift region N-
Below the floating field stop layer of N-type.
The features of the present invention also characterized in that
The floating field stop layer distance P of N-type+1.5~2.5 μm above collector.
The medium of isolated area filling is Si3N4。
Emitter N in mos gate polar region+Doping concentration be 1 × 1019cm-3-5×1022cm-3, dopant is phosphonium ion, knot
Depth is 3 μm -6 μm, and p-well part doping concentration is 8 × 1016cm-3-2×1017cm-3, junction depth be 8 μm -12 μm, dopant be boron from
Son, polysilicon gate doping concentration are 1 × 1020cm-3-5×1021cm-3, silicon dioxide thickness 100nm-200nm；
The drift region N- with a thickness of 100 μm -150 μm, doping concentration is 7 × 1013cm-3-1×1014cm-3, dopant is phosphorus
Ion；
The doping concentration of the floating field stop layer of N-type is 2 × 1016cm-3-3×1016cm-3, with a thickness of 2 μm -4 μm, dopant
For phosphonium ion；
P-stop layers of doping concentration is 1 × 1016cm-3-5×1016cm-3, with a thickness of 2 μm -4 μm, dopant be phosphorus from
Son；
Si3N4Isolated area with a thickness of 4 μm -8 μm；
P+Collector dopants are boron ion, and doping concentration is 6 × 1017cm-3-1×1020cm-3, junction depth is 1 μm -3 μm,；
N+Shorting region dopant is phosphonium ion, and doping concentration is 1 × 1019cm-3-5×1020cm- 3,Junction depth is 1 μm -3 μm.
Second of technical solution of the present invention is a kind of inverse conductivity type insulated gate bipolar transistor of collector isolation
Preparation method, in accordance with the following steps implement:
For P+Collector, N+Shorting region and the annealing of P-stop layers of ion implanting should be first using local rta technique
The manufacturing process that device grids are first completed on N- substrate, afterwards turns over device, carries out the injection of high energy phosphonium ion to N- substrate, makes
The phosphonium ion junction depth that must be injected reaches at 3.5-4 μm of surface or less, and implantation dosage is 1 × 1011cm-2, Implantation Energy 7-
9MeV；Then ion implanting is used, P-stop layers is initially formed, re-forms P+Collector and N+Shorting region, and to P-stop layers, P+
Collector and N+Shorting region carries out local short annealing；Electrode section is formed finally by evaporation of aluminum smithcraft to get current collection is arrived
Inverse conductivity type insulated gate bipolar transistor is isolated in pole.
The invention has the advantages that inverse conductivity type insulated gate bipolar transistor is isolated in phase in a kind of collector of the invention
With under structural parameters, compared with routine RC-IGBT, the voltage that initially turns back in forward conduction characteristic is decreased obviously.Crystalline substance of the invention
Body pipe blocking voltage is 1500V or so, and more conventional RC-IGBT increases about 30V.Regular oxidation slot isolated form RC-IGBT is with SiO2
For spacer medium, Si is used in the present invention3N4After material, reverse conduction voltage drop is greatly reduced, therefore has Si3N4Structure
A kind of collector, which is isolated inverse conductivity type insulated gate bipolar transistor power consumption is inversely connected, greatly to be reduced.In addition its Reverse recovery peak
It is worth current density reduction, reverse recovery time shortens.The introducing of the structure influences the switching characteristic of device smaller.
Detailed description of the invention
Fig. 1 is conventional RC-IGBT device longitudinal sectional drawing；
Fig. 2 is the forward and reverse conducting I-V characteristic curve of conventional RC-IGBT；
Fig. 3 is that inverse conductivity type insulated-gate bipolar transistor device longitudinal sectional drawing is isolated in a kind of collector of the present invention；
Fig. 4 is the conducting that inverse conductivity type insulated gate bipolar transistor and routine RC-IGBT is isolated in a kind of collector of the present invention
I-V characteristic correlation curve；
Fig. 5 is the blocking that inverse conductivity type insulated gate bipolar transistor and routine RC-IGBT is isolated in a kind of collector of the present invention
Character Comparison curve；
Fig. 6 is that collector isolation material of the present invention is Si3N4Transistor material be isolated with equivalent constructions lower collector be
SiO2When inverse lead Character Comparison curve；
Fig. 7 is that inverse conductivity type insulated gate bipolar transistor is isolated in a kind of collector of the present invention and routine RC-IGBT is reversely extensive
Multiple Character Comparison curve；
Fig. 8 is that inverse conductivity type insulated gate bipolar transistor impurity concentration is isolated with device with device in a kind of collector of the present invention
Depth change curve.
Wherein, the gate regions 1.MOS, the drift region 2.N-, the floating field stop layer of 3.N type, 4.P-stop layers, 5. isolated areas, 6.P+Collector, 7.N+Shorting region.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
As shown in Figure 1, the structure of conventional inverse conductivity type transistor is to be disposed with mos gate polar region, N- drift from top to bottom
Area part and P+Collector.
As shown in figure 3, inverse conductivity type insulated gate bipolar transistor is isolated in a kind of collector of the invention, including from top to bottom
Mos gate polar region 1, the drift region N- 2, P set gradually+Collector 6, P+6 side of collector has been disposed adjacent isolated area 5 and N+It is short
Road area 7, N+P-stop layer 4 is provided with above shorting region 7, top surface and 4 top surface of P-stop layer of isolated area 5 are generally aligned in the same plane,
The floating field stop layer 3 of N-type is additionally provided in the drift region N- 2, P-stop layer 4 and isolated area 5 are located under the floating field stop layer 3 of N-type
Side.
The floating 3 distance P of field stop layer of N-type+6 1.5~2.5 μm of top of collector.
The medium that isolated area 5 is filled is Si3N4。
Emitter N in mos gate polar region 1+Doping concentration be 1 × 1019cm-3-5×1022cm-3, dopant is phosphonium ion,
Junction depth is 3 μm -6 μm, and p-well part doping concentration is 8 × 1016cm-3-2×1017cm-3, junction depth is 8 μm -12 μm, and dopant is boron
Ion, polysilicon gate doping concentration are 1 × 1020cm-3-5×1021cm-3, silicon dioxide thickness 100nm-200nm；
The drift region N- 2 with a thickness of 100 μm -150 μm, doping concentration is 7 × 1013cm-3-1×1014cm-3, dopant is
Phosphonium ion；
The doping concentration of the floating field stop layer 3 of N-type is 2 × 1016cm-3-3×1016cm-3, with a thickness of 2 μm -4 μm, dopant
For phosphonium ion；
The doping concentration of P-stop layer 4 is 1 × 1016cm-3-5×1016cm-3, with a thickness of 2 μm -4 μm, dopant be phosphorus from
Son；
Isolated area 5 with a thickness of 4 μm -8 μm, that fill in isolated area is Si3N4；
P+6 dopant of collector is boron ion, and doping concentration is 6 × 1017cm-3-1×1020cm-3, junction depth is 1 μm of -3 μ
m,；
N+7 dopant of shorting region is phosphonium ion, and doping concentration is 1 × 1019cm-3-5×1020cm- 3,Junction depth is 1 μm -3 μm.
The width of transistor is 50um.
Therefore the distinguishing characteristics of the present invention and existing RC-IGBT structure essentially consist in: introducing the floating field of N-type and prevent
3 structure of layer；Si3N4Isolated area 5, while in N+P-stop layer 4 is introduced above shorting region.
Fig. 2 is RC-IGBT forward direction and reverse on state characteristic curve, is forward conduction characteristic positioned at first quartile, can be with
Significantly find out, there are negative resistance effects when voltage fold-back phenomenon, i.e. forward conduction in forward conduction characteristic.Third quadrant is
The reverse on state characteristic curve of RC-IGBT.As can be seen that RC-IGBT has reverse ducting capacity in Fig. 2.RC-IGBT voltage folding
Return phenomenon occur basic reason, be from forward conduction during monopole type mode work MOSFET work to ambipolar mode
IGBT switching when caused by.It is conductive that monopole type mode only has the electronics in MOSFET to participate in, and current density is small, break-over of device
Pressure drop is higher, and the existing electronics of ambipolar operating mode participates in conduction, and there have hole to participate in be conductive, and working current density is big,
Forward conduction voltage drop is relatively small.When both modes switch, voltage fold-back phenomenon is just generated.Voltage fold-back phenomenon and RC-
Layer doping concentration has direct relationship to the collector layout design and field stop layer (Field Stop, FS) of IGBT, is to be connected
Unfavorable factor in journey should be suppressed or eliminate.Otherwise RC-IGBT chip conducting electric current in parallel can be caused to be unevenly distributed,
So that device opening time disunity, current convergence flow to one single chip, causes chip current excessive and be burned out.
Transistor arrangement proposed by the invention is as shown in figure 3, isolated area Si3N4Material can stop well steam and
The diffusion of sodium ion effectively can prevent silicon to be oxidized, isolation channel Si3N4Dielectric property is better than SiO2Spacer medium.Together
When, the floating field stop layer of N-type is embedded in N- drift region, is located at P+On collector at 2 μm, same to P+Collector separates.P-
1 μm of stop thickness degree is located at N+Above shorting region.When forward conduction starts, it is clipped in N+P- between shorting region and N- drift layer
Stop layers can play the role of electronic barrier.
In addition, inverse peak current density is obviously reduced under freewheeling diode operating mode, reverse recovery time contracting
It is short.
Under identical structural parameters, compared with routine RC-IGBT, the voltage that initially turns back in forward conduction characteristic is by RC-
The 1.56V of IGBT is completely eliminated to 0V.The blocking voltage of CI-RC-IGBT is 1500V or so, and more conventional RC-IGBT increases about
30V.Regular oxidation slot isolated form RC-IGBT is with SiO2For spacer medium, Si is used in the present invention3N4It is reverse to be connected after material
Pressure drop greatly reduces, therefore has Si3N4A kind of collector of structure is isolated inverse conductivity type insulated gate bipolar transistor and is inversely connected
Power consumption greatly reduces.In addition, the more conventional RC-IGBT of Reverse recovery peak current density of CI-RC-IGBT is reduced by about 70A
cm-2, reverse recovery time shortens 100ns.The introducing of the structure influences the switching characteristic of device smaller.
A kind of collector of the invention is isolated inverse conductivity type insulated gate bipolar transistor and obtains preparation method, specific as follows:
For P+Collector, N+Shorting region and the annealing of P-stop layers of ion implanting should be first using local rta technique
The manufacturing process that device grids are first completed on N- substrate, afterwards turns over device, carries out the injection of high energy phosphonium ion to N- substrate, makes
The phosphonium ion junction depth that must be injected reaches at 3.5-4 μm of surface or less, and implantation dosage is 1 × 1011cm-2, Implantation Energy 7-
9MeV；Then ion implanting is used, P-stop layers is initially formed, re-forms P+Collector and N+Shorting region, and to P-stop layers, P+
Collector and N+Shorting region carries out local short annealing；Electrode section is formed finally by evaporation of aluminum smithcraft to get current collection is arrived
Inverse conductivity type insulated gate bipolar transistor is isolated in pole.
As shown in figure 4, for the conducting I-V characteristic correlation curve of transistor and routine RC-IGBT of the invention；And routine
RC-IGBT is compared, and the voltage that initially turns back in forward conduction characteristic is completely eliminated by the 1.56V of RC-IGBT to 0V.
Fig. 5 is the blocking characteristics correlation curve of transistor and routine RC-IGBT of the invention；The blocking electricity of CI-RC-IGBT
Pressure is 1500V or so, and more conventional RC-IGBT increases about 30V.
As Fig. 6 be collector be isolated material be Si3N4RC-IGBT material be isolated with equivalent constructions lower collector be
SiO2When inverse lead Character Comparison curve；As can be seen that having Si3N4The reverse conduction voltage drop of the CI-RC-IGBT of structure is reduced by about
2V, therefore its reverse conducting power will greatly shorten.
Fig. 7 is transistor and routine RC-IGBT reverse recovery characteristic correlation curve of the invention.CI-RC-IGBT's is reversed
Restore the more conventional RC-IGBT of peak current density and is reduced by about 70Acm-2, reverse recovery time shortens 100ns.Its dynamic is special
The more conventional RC-IGBT of property has greatly improved.
Its impurities concentration distribution is along collector and N+Distribution curve at shorting region is as shown in Figure 8.Box label curve
To be subdivision line at collector, circle label curve correspondence is in N+Subdivision line at shorting region.Other side's box label curve, device upper half
Partial impurities concentration profile is completely coincident, and Impurity Distribution is in the drift region N- to P+Collector first generates point upwards by N-FS layers
Peak, peak concentration is 2 × 1015cm-3, a downward spike is then generated, to form a PN junction, which is N-
Drift region and P+Collector is formed.To circle label curve, N is proximate to from the unique different place of collector subdivision line+Short circuit
P-stop floor impurity is boron ion above area, and corresponding peak concentration is 2 × 1015cm-3.So generating depletion region herein forms PN
Knot, the PN junction are also the key point for inhibiting voltage fold-back phenomenon.
Under identical structural parameters, compared with routine RC-IGBT, the voltage that initially turns back in forward conduction characteristic is by RC-
The 1.56V of IGBT is completely eliminated to 0V.The blocking voltage of CI-RC-IGBT is 1500V or so, and more conventional RC-IGBT increases about
30V.Regular oxidation slot isolated form RC-IGBT is with SiO2For spacer medium, Si is used in the present invention3N4It is reverse to be connected after material
Pressure drop greatly reduces, therefore has Si3N4The CI-RC-IGBT of structure is inversely connected power consumption and greatly reduces.In addition, CI-RC-
The more conventional RC-IGBT of Reverse recovery peak current density of IGBT is reduced by about 70Acm-2, reverse recovery time shortens
100ns.The introducing of the structure influences the switching characteristic of device smaller.
Claims (5)
1. inverse conductivity type insulated gate bipolar transistor is isolated in a kind of collector, which is characterized in that including setting gradually from top to bottom
Mos gate polar region (1), the drift region N- (2) and P+Collector (6), the P+Collector (6) side is disposed with isolated area (5)
And N+Shorting region (7), the isolated area (5) are by P+Collecting zone (6) and N+Shorting region (7) is kept apart；The N+On shorting region (7)
Surface is additionally provided with P-stop layers (4), and the top surface of the isolated area (5) is generally aligned in the same plane with P-stop layers of (4) top surface, described
The top surface of isolated area (5) is located in the drift region N- (2), is additionally provided with the floating field stop layer of N-type (3) in the drift region N- (2),
P-stop layers described (4) and isolated area (5) are located at below the floating field stop layer of N-type (3).
2. inverse conductivity type insulated gate bipolar transistor is isolated in a kind of collector according to claim 1, it is characterised in that: institute
The floating field stop layer of the N-type stated (3) distance P+1.5~2.5 μm above collector (6).
3. inverse conductivity type insulated gate bipolar transistor is isolated in a kind of collector according to claim 1, it is characterised in that: institute
The medium for stating isolated area (5) filling is Si3N4。
4. inverse conductivity type insulated gate bipolar transistor is isolated in a kind of collector according to claim 1, it is characterised in that:
Emitter N in the mos gate polar region (1)+Doping concentration be 1 × 1019cm-3-5×1022cm-3, dopant be phosphorus from
Son, junction depth are 3 μm -6 μm, and p-well part doping concentration is 8 × 1016cm-3-2×1017cm-3, junction depth is 8 μm -12 μm, dopant
For boron ion, polysilicon gate doping concentration is 1 × 1020cm-3-5×1021cm-3, silicon dioxide thickness 100nm-200nm；
The drift region N- (2) with a thickness of 100 μm -150 μm, doping concentration is 7 × 1013cm-3-1×1014cm-3, dopant
For phosphonium ion；
The doping concentration of the floating field stop layer of N-type (3) is 2 × 1016cm-3-3×1016cm-3, with a thickness of 2 μm -4 μm, doping
Agent is phosphonium ion；
The doping concentration of P-stop layers described (4) is 1 × 1016cm-3-5×1016cm-3, with a thickness of 2 μm -4 μm, dopant is phosphorus
Ion；
The isolated area (5) with a thickness of 4 μm -8 μm, that fill in isolated area (5) is Si3N4；
The P+Collector (6) dopant is boron ion, and doping concentration is 6 × 1017cm-3-1×1020cm-3, junction depth is 1 μm of -3 μ
m,；
The N+Shorting region (7) dopant is phosphonium ion, and doping concentration is 1 × 1019cm-3-5×1020cm- 3,Junction depth is 1 μm of -3 μ
m。
5. the preparation side that inverse conductivity type insulated gate bipolar transistor is isolated in a kind of collector according to any one of claims 1-4
Method, which is characterized in that specifically implement in accordance with the following steps:
For P+Collector, N+Shorting region and the annealing of P-stop layers of ion implanting should be existed first using local rta technique
The manufacturing process that device grids are completed on N- substrate, afterwards turns over device, carries out the injection of high energy phosphonium ion to N- substrate, so that note
The phosphonium ion junction depth entered reaches at 3.5-4 μm of surface or less, and implantation dosage is 1 × 1011cm-2, Implantation Energy 7-9MeV；So
Ion implanting is used afterwards, is initially formed P-stop layers, is re-formed P+Collector and N+Shorting region, and to P-stop layers, P+Collector and
N+Shorting region carries out local short annealing；It is inverse to get being isolated to collector that electrode section is formed finally by evaporation of aluminum smithcraft
Conductivity type insulated gate bipolar transistor.
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| CN115360231A (en) * | 2022-08-29 | 2022-11-18 | 东南大学 | Reverse conducting type insulated gate bipolar transistor with low hysteresis voltage and preparation process thereof |
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| CN115360231A (en) * | 2022-08-29 | 2022-11-18 | 东南大学 | Reverse conducting type insulated gate bipolar transistor with low hysteresis voltage and preparation process thereof |
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