CN109211444A - pressure sensor and preparation method thereof - Google Patents
pressure sensor and preparation method thereof Download PDFInfo
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- CN109211444A CN109211444A CN201811119704.5A CN201811119704A CN109211444A CN 109211444 A CN109211444 A CN 109211444A CN 201811119704 A CN201811119704 A CN 201811119704A CN 109211444 A CN109211444 A CN 109211444A
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- Prior art keywords
- layer
- gan epitaxial
- pressure sensor
- epitaxial layer
- detection zone
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- 238000002360 preparation method Methods 0.000 title claims description 13
- 238000001514 detection method Methods 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910008065 Si-SiO Inorganic materials 0.000 description 2
- 229910006405 Si—SiO Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention is suitable for pressure sensor technique field, provides a kind of pressure sensor, including silicon substrate layer, GaN epitaxial layer, pressure test circuit, circuit pin and dielectric layer；GaN epitaxial layer epitaxial growth in silicon substrate layer forms, GaN epitaxial layer is equipped with detection zone, pressure test circuit is located in the detection zone in GaN epitaxial layer, and circuit pin is located at outside the detection zone in GaN epitaxial layer, and dielectric layer deposits in GaN epitaxial layer and forms and cover pressure test circuit；Silicon substrate layer is equipped with through-hole, and the cross section of through-hole is identical with detection zone shape, and through-hole and detection zone are corresponding.The thickness effect pressure sensor range of dielectric layer, the thickness by changing dielectric layer can be adjusted pressure sensor range, reduce pressure sensor range control difficulty.
Description
Technical field
The invention belongs to pressure sensor technique fields more particularly to a kind of pressure sensor and preparation method thereof.
Background technique
Semiconductor material pressure sensor has small in size, consistency high and the advantages such as responsiveness is big, however conventional Si
Base pressure sensor can only generally work to 125 DEG C.PN junction isolation under high temperature between pressure drag component ineffective causes pressure to pass
Sensor failure.There is an urgent need to high performance pressure sensors for higher temperature application field.Silicon substrate pressure sensor, SiC material
Pressure sensor combine it is resistant to high temperature encapsulation, protection technique be current high-temp pressure sensor main technical schemes.
However, Si is a kind of semiconductor material of low energy gap, high temperature resistance is not so good as semiconductor material with wide forbidden band.Width is prohibited
The difficulty for being then limited to the techniques such as etching, doping with SiC pressure sensor development is too big.GaN is a kind of wide bandgap semiconductor material
Material, and there is stronger piezoelectric polarization effect.Has the ability to work under high temperature, radiation environment.The upper GaN epitaxy piece of Si can be with
Biggish wafer is prepared, and processing technology is easier than carbofrax material.However, in pressure sensor preparation process, it is difficult to right
The range of pressure sensor is controlled.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of pressure sensor and preparation method thereof, to solve the prior art
The big problem of range control difficulty in middle pressure sensor preparation process.
In order to solve the above technical problems, the first aspect of the embodiment of the present invention provides a kind of pressure sensor, comprising: silicon
Substrate layer, GaN epitaxial layer, pressure test circuit, circuit pin and dielectric layer；
GaN epitaxial layer epitaxial growth in the silicon substrate layer forms, and the GaN epitaxial layer is equipped with detection zone,
The pressure test circuit is located in the detection zone in the GaN epitaxial layer, and the circuit pin is located in the GaN epitaxial layer
Detection zone outside, the dielectric layer deposits in the GaN epitaxial layer and forms and cover the pressure test circuit；The silicon lining
Bottom is equipped with through-hole, and the cross section of the through-hole is identical with detection zone shape, and the through-hole and detection zone are corresponding.
Further, the thickness of dielectric layers is 10nm to 105nm。
Further, the GaN epitaxial layer with a thickness of 100nm to 5 × 106nm。
Further, the through-hole in the silicon substrate layer is etched using dry or wet technique.
Further, any one or more group in the pressure test electricity routing resistance, capacitor, diode and triode
It closes.
Further, the dielectric layer is SiO2Or SiN.
The second aspect of the embodiment of the present invention provides a kind of preparation method based on pressure sensor described above, packet
It includes:
The epitaxial growth GaN epitaxial layer in silicon substrate layer, and detection zone is divided in GaN epitaxial layer；
Pressure test circuit is made in GaN epitaxial layer and circuit pin, the pressure test circuit are located at the detection
In area, the circuit pin is located at outside the detection zone；
The metallization medium layer in GaN epitaxial layer, the dielectric layer cover the test circuit and the circuit pin；
Silicon substrate layer is performed etching to GaN epitaxial layer and forms through-hole, the through-hole and detection zone are corresponding；
Dielectric layer is performed etching and exposes the circuit pin.
Further, etching the dielectric layer using dry or wet technique exposes the circuit pin.
Further, the GaN epitaxial layer with a thickness of 100nm to 5 × 106nm。
Further, the thickness of dielectric layers is 10nm to 105nm。
The beneficial effects of adopting the technical scheme are that sensor provided by the invention include silicon substrate layer,
GaN epitaxial layer, pressure test circuit, circuit pin and dielectric layer；GaN epitaxial layer epitaxial growth in silicon substrate layer forms, GaN
Epitaxial layer is equipped with detection zone, and pressure test circuit is located in the detection zone in GaN epitaxial layer, and circuit pin is located at GaN epitaxy
Outside detection zone on layer, dielectric layer deposits in GaN epitaxial layer and forms and cover pressure test circuit；Silicon substrate layer is equipped with logical
The cross section in hole, through-hole is identical with detection zone shape, and through-hole and detection zone are corresponding.The thickness effect pressure sensor of dielectric layer
Range, the thickness by changing dielectric layer can be adjusted pressure sensor range, reduce pressure sensor range control
Difficulty processed.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the structural schematic diagram of pressure sensor provided in an embodiment of the present invention；
Fig. 2 is the flow chart of pressure sensor preparation method provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram provided in an embodiment of the present invention in silicon substrate layer after epitaxial growth GaN epitaxial layer；
Fig. 4 is the production pressure test circuit provided in an embodiment of the present invention in GaN epitaxial layer and the knot after circuit pin
Structure schematic diagram；
Fig. 5 is the structural schematic diagram provided in an embodiment of the present invention in GaN epitaxial layer after metallization medium layer；
Fig. 6 is the structural schematic diagram after the etching provided in an embodiment of the present invention to silicon substrate layer.
In figure: 1, silicon substrate layer；2, GaN epitaxial layer；3, dielectric layer；4, pressure test circuit；5, circuit pin；6, lead to
Hole.
Specific embodiment
In being described below, for illustration and not for limitation, the tool of such as particular system structure, technology etc is proposed
Body details, to understand thoroughly the embodiment of the present invention.However, it will be clear to one skilled in the art that there is no these specific
The present invention also may be implemented in the other embodiments of details.In other situations, it omits to well-known system, device, electricity
The detailed description of road and method, in case unnecessary details interferes description of the invention.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.
As shown in Figure 1, pressure sensor includes silicon substrate layer 1, GaN epitaxial layer 2, pressure test circuit 4, circuit pin 5
With dielectric layer 3；The epitaxial growth in silicon substrate layer 1 of GaN epitaxial layer 2 forms, and GaN epitaxial layer 2 is equipped with detection zone, pressure test
Circuit 4 is located in the detection zone in GaN epitaxial layer 2, and circuit pin 5 is located at outside the detection zone in GaN epitaxial layer 2, and dielectric layer 3 exists
Deposition forms and covers pressure test circuit 4 in GaN epitaxial layer 2；Silicon substrate layer 1 is equipped with through-hole 6, the cross section of through-hole 6 and inspection
Survey area's shape is identical, and through-hole 6 and detection zone are corresponding.
The thickness effect pressure sensor range of dielectric layer 3, the thickness by changing dielectric layer 3 can be to pressure sensor
Range is adjusted, and in metallization medium layer 3 in GaN epitaxial layer 2, the technique of thickness control is relatively easy, therefore reduces pressure
Transducer range controls difficulty.
In one embodiment of the present of invention, dielectric layer 3 is with a thickness of 10nm to 105nm.The thickness of dielectric layer 3 directly affects biography
The specific thickness of the range of sensor, dielectric layer 3 can be set according to actual needs.
In one embodiment of the present of invention, GaN epitaxial layer 2 with a thickness of 100nm to 5 × 106nm。
In one embodiment of the present of invention, GaN epitaxial layer 2 is heterogeneous to become AlGaN/GaN, InAlN/GaN or AlN/GaN.
In one embodiment of the present of invention, the through-hole 6 in silicon substrate layer 1 is etched using dry or wet technique.It is logical
After hole 6 is formed, through-hole 6 is located at the lower section of detection zone, under pressure, 3 meeting of GaN epitaxial layer 2 and dielectric layer on detection zone
Deformation occurs, and pressure test circuit 4 can incude deformation and carry out pressure test.
In one embodiment of the present of invention, pressure test circuit 4 is by any one in resistance, capacitor, diode and triode
Kind or multiple combinations form.Resistance, capacitor, diode and triode mentioned herein is that port identity can be with dielectric layer 3
Changed element is strained, is all based on what GaN material was made.Pressure test circuit 4 herein may include capacitor,
The circuit of any one component composition in capacitor, diode and triode, while may also be included in which two or more
The circuit of component composition.
In addition to this, the component for including in pressure test circuit 4, can be according to reality other than in mentioned above 4
The case where border, applies other kinds of component.
In one embodiment of the present of invention, dielectric layer 3 is SiO2Or SiN.The dielectric layer 3 both can be used as the protection of device
Layer can also be used as the contact layer of pedestal connection.For example, Si-SiO can be used when pedestal is Si2Bonding or Si-SiN key
The mode of conjunction realizes the bonding of pedestal and sensor, improves the air-tightness of cavity.
As shown in Fig. 2, disclosing a kind of preparation method of pressure sensor in the present invention, comprising:
Step 201, as shown in figure 3, in silicon substrate layer 1 epitaxial growth GaN epitaxial layer 2, and in GaN epitaxial layer 2 draw
Divide detection zone.
Step 202, as shown in figure 4, making pressure test circuit 4 and circuit pin 5, pressure test in GaN epitaxial layer 2
Circuit 4 is located in detection zone, and circuit pin 5 is located at outside detection zone.
Step 203, as shown in figure 5, in GaN epitaxial layer 2 metallization medium layer 3,3 coverage test circuit of dielectric layer and circuit
Pin 5.
Step 204, through-hole 6, through-hole 6 and inspection are formed as shown in fig. 6, performing etching silicon substrate layer 1 to GaN epitaxial layer 2
It is corresponding to survey area.
Step 205, dielectric layer 3 is performed etching and exposes circuit pin 5, form final pressure sensor.
The thickness effect pressure sensor range of dielectric layer, the thickness by changing dielectric layer can be to pressure sensing tolerance
Journey is adjusted, and reduces pressure sensor range control difficulty.
In one embodiment of the present of invention, etching the dielectric layer using dry or wet technique reveals the circuit pin
Out, other devices of connection are used for sensor is subsequent.
In one embodiment of the present of invention, GaN epitaxial layer 2 with a thickness of 100nm to 5 × 106nm。
In one embodiment of the present of invention, dielectric layer 3 is with a thickness of 10nm to 105nm.The thickness of dielectric layer 3 directly affects biography
The specific thickness of the range of sensor, dielectric layer 3 can be set according to actual needs.
In one embodiment of the present of invention, dielectric layer 3 is SiO2Or SiN.Dielectric layer 3 both can be used as the protection of device
Layer can also be used as the contact layer of pedestal connection.For example, Si-SiO can be used when pedestal is Si2Bonding or Si-SiN key
The mode of conjunction realizes the bonding of pedestal and sensor, improves the air-tightness of cavity.
In one embodiment of the present of invention, pressure test circuit 4 is by any one in resistance, capacitor, diode and triode
Kind or multiple combinations form.Resistance, capacitor, diode and triode mentioned herein is that port identity can be with dielectric layer 3
Changed element is strained, is all based on what GaN material was made.Pressure test circuit 4 herein may include capacitor,
The circuit of any one component composition in capacitor, diode and triode, while may also be included in which two or more
The circuit of component composition.
In one embodiment of the present of invention, the through-hole 6 in silicon substrate layer 1 is etched using dry or wet technique.It is logical
After hole 6 is formed, through-hole 6 is located at the lower section of detection zone, under pressure, 3 meeting of GaN epitaxial layer 2 and dielectric layer on detection zone
Deformation occurs, and pressure test circuit 4 can incude deformation and carry out pressure test.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although referring to aforementioned reality
Applying example, invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each
Technical solution documented by embodiment is modified or equivalent replacement of some of the technical features；And these are modified
Or replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution should all
It is included within protection scope of the present invention.
Claims (10)
1. a kind of pressure sensor characterized by comprising silicon substrate layer, GaN epitaxial layer, pressure test circuit, circuit pin
And dielectric layer；
GaN epitaxial layer epitaxial growth in the silicon substrate layer forms, and the GaN epitaxial layer is equipped with detection zone, described
Pressure test circuit is located in the detection zone in the GaN epitaxial layer, and the circuit pin is located at the inspection in the GaN epitaxial layer
It surveys outside area, the dielectric layer deposits in the GaN epitaxial layer and forms and cover the pressure test circuit；The silicon substrate layer
Equipped with through-hole, the cross section of the through-hole is identical with detection zone shape, and the through-hole and detection zone are corresponding.
2. pressure sensor according to claim 1, which is characterized in that the thickness of dielectric layers is 10nm to 105nm。
3. pressure sensor according to claim 1, which is characterized in that the GaN epitaxial layer with a thickness of 100nm to 5
×106nm。
4. pressure sensor according to claim 1, which is characterized in that through-hole in the silicon substrate layer using dry method or
Wet processing etches.
5. pressure sensor according to claim 1, which is characterized in that the pressure test electricity routing resistance, capacitor, two
Any one or more in pole pipe and triode is composed.
6. pressure sensor according to claim 1, which is characterized in that the dielectric layer is SiO2Or SiN.
7. a kind of preparation method based on pressure sensor described in any one of claim 1 to 6, which is characterized in that packet
It includes:
The epitaxial growth GaN epitaxial layer in silicon substrate layer, and detection zone is divided in GaN epitaxial layer；
Pressure test circuit is made in GaN epitaxial layer and circuit pin, the pressure test circuit are located in the detection zone,
The circuit pin is located at outside the detection zone；
The metallization medium layer in GaN epitaxial layer, the dielectric layer cover the test circuit and the circuit pin；
Silicon substrate layer is performed etching to GaN epitaxial layer and forms through-hole, the through-hole and detection zone are corresponding；
Dielectric layer is performed etching and exposes the circuit pin.
8. the preparation method of pressure sensor according to claim 7, which is characterized in that carved using dry or wet technique
Losing the dielectric layer exposes the circuit pin.
9. the preparation method of pressure sensor according to claim 7, which is characterized in that the thickness of the GaN epitaxial layer
For 100nm to 5 × 106nm。
10. the preparation method of pressure sensor according to claim 7, which is characterized in that the thickness of dielectric layers is
10nm to 105nm。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811119704.5A CN109211444A (en) | 2018-09-25 | 2018-09-25 | pressure sensor and preparation method thereof |
| PCT/CN2018/110438 WO2020062349A1 (en) | 2018-09-25 | 2018-10-16 | Pressure sensor and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811119704.5A CN109211444A (en) | 2018-09-25 | 2018-09-25 | pressure sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109211444A true CN109211444A (en) | 2019-01-15 |
Family
ID=64981412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811119704.5A Pending CN109211444A (en) | 2018-09-25 | 2018-09-25 | pressure sensor and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109211444A (en) |
| WO (1) | WO2020062349A1 (en) |
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| US7181972B2 (en) * | 2004-12-27 | 2007-02-27 | General Electric Company | Static and dynamic pressure sensor |
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| CN105021328B (en) * | 2015-07-13 | 2019-01-18 | 厦门大学 | The compatible piezoresistive pressure sensor and preparation method thereof of CMOS technology |
| CN107957304A (en) * | 2017-11-10 | 2018-04-24 | 中国科学院半导体研究所 | MEMS high-temp pressure sensors based on two-dimensional electron gas and preparation method thereof |
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2018
- 2018-09-25 CN CN201811119704.5A patent/CN109211444A/en active Pending
- 2018-10-16 WO PCT/CN2018/110438 patent/WO2020062349A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7181972B2 (en) * | 2004-12-27 | 2007-02-27 | General Electric Company | Static and dynamic pressure sensor |
| US7313965B2 (en) * | 2004-12-27 | 2008-01-01 | General Electric Company | High-temperature pressure sensor |
| US20090293627A1 (en) * | 2005-12-31 | 2009-12-03 | Endress+Hauser Gmbh+Co. Kg | Pressure-Measuring Cell |
| CN101428752A (en) * | 2008-11-18 | 2009-05-13 | 中国科学院上海微系统与信息技术研究所 | Growth method of group III nitrides |
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| CN104907568A (en) * | 2015-06-25 | 2015-09-16 | 武汉大学 | Piezoresistive thick film pressure sensor manufacturing method based on femtosecond laser composite technology |
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| WO2020062349A1 (en) | 2020-04-02 |
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