CN106384749A - Pressure sensor and making method thereof - Google Patents
Pressure sensor and making method thereof Download PDFInfo
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- CN106384749A CN106384749A CN201610929260.6A CN201610929260A CN106384749A CN 106384749 A CN106384749 A CN 106384749A CN 201610929260 A CN201610929260 A CN 201610929260A CN 106384749 A CN106384749 A CN 106384749A
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000002033 PVDF binder Substances 0.000 claims abstract description 81
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims abstract description 81
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 7
- 230000001965 increasing effect Effects 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 7
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 description 9
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention relates to a pressure sensor and a making method thereof. An epitaxial layer grown on a silicon carbide SiC substrate layer comprises a GaN channel layer and an AlGaN cap layer on the GaN channel layer, and a 2DEG channel is formed between the AlGaN cap layer and the GaN channel layer. A source and a drain are formed on the AlGaN cap layer. A beta PVDF film polarized at high voltage is arranged at a gate position of the AlGaN cap layer. By fully integrating the characteristics of PVDF and HEMT, the sensing sensitivity of the novel hetero-junction pressure sensor can be improved effectively.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a pressure sensor and a manufacturing method thereof.
Background
Along with the rapid development of the internet of things technology, wearable intelligent medical equipment rises, and the market demand drives the rapid development of the technology. The market puts forward new requirements on the pressure sensor, and the higher sensitivity, the smaller volume and the stronger environment adaptability are used as more rigorous standards in the field of sensors. The traditional pressure sensor is mainly a mechanical pressure sensor, and the development of the capacitive and resistive semiconductor pressure sensor based on silicon is accompanied by the development of MEMS technology and semiconductor technology, so that the development of the sensor is greatly promoted.
The polarization material has wide application in sensitive pressure sensors, such as barium titanate BT, piezoelectric ceramic (lead zirconate titanate) PZT, polyvinylidene fluoride PVDF, etc. Since the birth of PVDF, it is known for its good flexibility, low density, low resistance to impedance. Due to its wide range of applications, PVDF has wide applications in low cost, repeatable pressure sensors.
Recently, AlGaN/GaN High Electron Mobility Transistors (HEMTs) with high carrier concentration due to spontaneous and piezoelectric polarization effects have shown great application potential in the field of chemical and biological sensors, unlike conventional field effect transistors, which are not intentionally doped. In a HEMT device where electrons are confined in a 2DEG (two-dimensional electron gas) channel between AlGaN/GaN two layers, the 2DEG induces a large amount of positive charge on the surface of the HEMT. Slight changes of external force on the surface of the HEMT can affect the changes of charges on the surface of the HEMT, and further affect two-dimensional electron gas in a channel. Based on the above characteristics of nitride HEMTs and PVDF, combining them to form a more sensitive and miniaturized pressure sensor has become a research subject worth discussing.
Disclosure of Invention
The invention provides a novel heterojunction pressure sensor capable of improving the induction sensitivity and a manufacturing method thereof by fully combining the characteristics of PVDF and modern HEMT devices.
In order to achieve the above object, one aspect of the present invention is to provide a method for preparing a β type PVDF film, wherein:
placing a sample of the beta type PVDF film on a copper substrate, and immersing the sample in a perfluorotributylamine solution;
and a copper wire is suspended above the sample of the beta-type PVDF film, the copper wire is communicated with a direct current power supply, and high voltage is applied to the sample of the beta-type PVDF film to obtain the beta-type PVDF film.
Preferably, the temperature of the perfluorotributylamine solution is maintained at 70 ℃; the diameter of the copper wire is 0.2 mm; copper wires were suspended 1cm above the sample of beta-type PVDF film; the voltage of the dc power supply was 10 kV.
Preferably, 10 wt% of PMMA mixed with PVDF powder raw material is added to a solution formed in N, N-dimethylacetamide, and a sample of the β type PVDF film is obtained by crystallization.
Another technical solution of the present invention is to provide a method for manufacturing a pressure sensor, wherein:
growing an undoped GaN channel layer on a SiC substrate, and growing undoped Al on the GaN channel layer0.25Ga0.75An N cap layer;
performing mesa isolation on the Al0.25Ga0.75Etching the N cap layer to form design positions of a source electrode and a drain electrode; depositing a metal layer at the corresponding design position to form contact electrodes of a source electrode and a drain electrode;
determining the Al by using the positive photoresist as a mask through a photoetching process0.25Ga0.75And arranging an β type PVDF film on the grid position.
Preferably, the beta-type PVDF film prepared by any one of the above methods is provided to the gate position.
Preferably, a first surface of the β -type PVDF film is positively charged and a second surface opposite to the first surface is negatively charged, wherein the first surface is tightly attached to the Al0.25Ga0.75The upper surface of the N cap layer, or a first surface of the β type PVDF film is positively charged, and a second surface opposite to the first surfaceNegatively charged, wherein the second surface is tightly attached to the Al0.25Ga0.75And the upper surface of the N cap layer.
Preferably, an undoped GaN channel layer and undoped Al0.25Ga0.75The N cap layer grows through a molecular beam epitaxy technology;
etching the design positions of a source electrode and a drain electrode by utilizing an inductive coupling plasma technology in argon, wherein the technological parameters of the inductive coupling plasma technology comprise power of 300W, frequency of 2MHz, -90V self-bias voltage and pressure of 5 mTorr;
flowing nitrogen N at 850 ℃ by electron beam deposition2Depositing one metal or alloy of a plurality of metals in Ti/Al/Pt/Au after 50s to form contact electrodes of a source electrode and a drain electrode;
the Al is0.25Ga0.75The gate position size on the N cap layer is 10 × 50 μm;
and (3) carrying out size adjustment on the beta-type PVDF film at the position of the grid electrode by a micro-plotter.
Preferably, the thickness of the GaN channel layer is 2 μm; the Al is0.25Ga0.75The thickness of the N cap layer is 250nm, and the thickness of the β type PVDF film at the position of the grid electrode when the film is not stressed is 2 mu m.
Another technical solution of the present invention is to provide a pressure sensor, wherein:
the pressure sensor is provided with a SiC substrate layer;
the epitaxial layer grown on the substrate layer comprises a GaN channel layer and an AlGaN cap layer on the GAN channel layer, and a 2DEG channel is formed between the AlGaN cap layer and the GAN channel layer;
a source electrode and a drain electrode are respectively formed on the AlGaN cap layer;
and a beta-type PVDF film is arranged at the grid position of the AlGaN cap layer.
Preferably, a first surface of the β -type PVDF film is positively charged and a second surface opposite to the first surface is negatively charged, wherein the first surface is tightly attached to the Al0.25Ga0.75The upper surface of the N cap layer enables the current I between the grid electrode and the drain electrode of the pressure sensordsIncreases with increasing pressure to which the β -type PVDF film is subjected;
alternatively, a first surface of the β -type PVDF film is positively charged and a second surface opposite to the first surface is negatively charged, wherein the second surface is closely attached to the Al0.25Ga0.75The upper surface of the N cap layer enables the current I between the grid electrode and the drain electrode of the pressure sensordsDecreases with increasing pressure to which the β -type PVDF film is subjected.
In conclusion, the characteristics of PVDF and HEMT are fully combined, and the novel heterojunction pressure sensor manufactured by the method can effectively improve the sensing sensitivity.
Drawings
FIGS. 1 and 2 are schematic diagrams of two embodiments of a heterojunction pressure sensor made by combining PVDF film in the invention;
FIG. 3 is a schematic representation of high voltage polarization of PVDF samples in the present invention.
Detailed Description
As shown in fig. 1 and 2, the invention provides a novel heterojunction pressure sensor, which is provided with a substrate layer of SiC; an epitaxial layer formed on the substrate layer comprises a GaN channel layer and an AlGaN cap layer on the GAN channel layer, and a 2DEG channel is formed between the AlGaN cap layer and the GAN channel layer; respectively forming a source electrode and a drain electrode on the AlGaN cap layer; and forming a beta-type PVDF film on the grid position of the AlGaN cap layer.
The beta type PVDF material has good polarization characteristics. The poled material contains many small dipole elements with positive charges on one side of the material and negative charges on the other side of the material opposite the surface on which the positive charges are located. Under the action of external pressure, the size of the piezoelectric sample and the size of the dipole unit are reduced. So that all the electric dipole moments in the material unit cell are relatively reduced. The present invention takes advantage of these properties by changing the charge density across the material as the material's electrical dipole moment changes.
In the first embodiment shown in FIG. 1, the first surface of the PVDF film is a bottom surface, the second surface of the PVDF film is a top surface, when the PVDF film is placed on the AlGaN cap layer, the first surface (with positive charge) of the PVDF film is tightly attached to the upper surface of the AlGaN cap layer, and the second surface of the PVDF film is far away from the AlGaN cap layerdsWill increase with increasing pressure to which the PVDF film is subjected.
In a second embodiment shown in FIG. 2, the polarization is reversed, with the first surface of the PVDF film being the top surface and the second surface being the bottom surface; when the PVDF film is placed on the AlGaN cap layer, the second surface (with negative charges) of the PVDF film is tightly attached to the upper surface of the AlGaN cap layer, and the first surface is far away from the AlGaN cap layer. Thus, in this second embodiment, the positive charge on the top surface of the AlGaN cap is increased and the drain current is relatively increased. I.e. the current I between the gate and the drain in this exampledsWill decrease as the pressure to which the PVDF film is subjected increases.
The manufacturing method of the pressure sensor comprises the following steps:
s1, growing an epitaxial layer on the SiC substrate by a molecular beam epitaxy technology, wherein the epitaxial layer comprises:
growing an undoped GaN channel layer with the thickness of 2 mu m on the SiC substrate; and the number of the first and second groups,
growing undoped Al with the thickness of 250nm on the GaN channel layer0.25Ga0.75And the N cap layer.
S2 in Al0.25Ga0.75A source electrode and a drain electrode are arranged on the N cap layer;
etching the design positions of a source electrode and a drain electrode by using an ICP (inductively coupled plasma) technology in argon Ar through mesa isolation, wherein the power is 300W, the frequency is 2MHz, the voltage is at-90V self-bias, and the pressure is 5mTorr (millitorr);
flowing nitrogen N at 850 ℃ using E _ beam deposited technique2After 50s, one metal or the alloy of a plurality of metals in Ti/Al/Pt/Au is deposited at the etching position to obtain 5 × 10-6Ωcm2The standard ohmic contact emitter is formed to constitute a source electrode and a drain electrode, respectively.
S3, providing β type PVDF film to Al0.25Ga0.75The grid electrode position of the N cap layer; wherein,
using the positive photoresist as a mask, determining that the size of the gate position determined by the photoetching process is 10 × 50 μm;
and forming a coating of beta-type PVDF material at the position of the grid, and manufacturing a PVDF film with unpolarized thickness of 2 mu m at the position of the grid by a micro-plotter.
Wherein, the preparation process of the beta type PVDF film comprises the following steps:
1) 10 wt% PMMA (polymethyl methacrylate) mixed with PVDF powder as a raw material was added to N, N-dimethylacetamide to form a solution.
2) The beta-type PVDF film is prepared by utilizing the difference of PMMA and PVDF crystallization temperatures (PMMA crystallization temperature is 114 ℃, PVDF crystallization temperature is-38 ℃).
Note: the PVDF film directly synthesized by the PVDF solution is alpha-type PVDF. The α -type PVDF is neither polarizable nor piezoelectric nor pyroelectric. However, by mixing 10 wt% of PMMA with PVDF, crystals of the β type PVDF can be obtained.
As shown in fig. 3, in order to further increase the fraction of β -type PVDF, a method of applying high pressure to the sample is adopted, which includes:
3) a sample 31 of a beta-type PVDF film was placed on a copper substrate 32 and immersed in a solution 33 of perfluorotributylamine (F-43) (the solution was maintained at 70 ℃ C.), the solution 33 serving to prevent the high voltage arcing effect.
4) A copper wire with a diameter of 0.2mm was suspended 1cm above the sample of beta-type PVDF film.
5) The copper substrate 32 was grounded, and a 10kV dc power supply was connected to the copper wire to apply a high voltage to the sample.
In conclusion, the characteristics of PVDF and HEMT are fully combined, and the novel heterojunction pressure sensor manufactured by the method can effectively improve the sensing sensitivity.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A preparation method of a beta type PVDF film is characterized in that:
placing a sample of the beta type PVDF film on a copper substrate, and immersing the sample in a perfluorotributylamine solution;
and a copper wire is suspended above the sample of the beta-type PVDF film, the copper wire is communicated with a direct current power supply, the copper substrate is grounded, and high voltage is applied to the sample of the beta-type PVDF film to obtain the beta-type PVDF film.
2. The method for preparing a β -type PVDF film according to claim 1,
the temperature of the perfluorotributylamine solution is kept at 70 ℃; the diameter of the copper wire is 0.2 mm; copper wires were suspended 1cm above the sample of beta-type PVDF film; the voltage of the dc power supply was 10 kV.
3. The method for producing a β type PVDF film as defined in claim 1 or 2,
mixing 10 wt% of PMMA and PVDF powder raw materials, adding the mixture into a solution formed by N, N-dimethylacetamide, and crystallizing to obtain a sample of the beta-type PVDF film.
4. A manufacturing method of a pressure sensor is characterized by comprising the following steps:
growing an undoped GaN channel layer on a SiC substrate, and growing undoped Al on the GaN channel layer0.25Ga0.75An N cap layer;
performing mesa isolation on the Al0.25Ga0.75Etching the N cap layer to form design positions of a source electrode and a drain electrode; depositing a metal layer at the corresponding design position to form contact electrodes of a source electrode and a drain electrode;
determining the Al by using the positive photoresist as a mask through a photoetching process0.25Ga0.75And arranging an β type PVDF film on the grid position.
5. The method of manufacturing a pressure sensor according to claim 4, wherein:
disposing the β -type PVDF film prepared by the method of any one of claims 1 to 3 to the gate position.
6. The method of manufacturing a pressure sensor according to claim 5, wherein:
the first surface of the β type PVDF film is positively charged, and the second surface opposite to the first surface is negatively charged, wherein the first surface is tightly attached to the Al0.25Ga0.75Or a first surface of the β type PVDF film is positively charged, and a second surface opposite to the first surface is negatively charged, wherein the second surface is tightly attached to the Al0.25Ga0.75And the upper surface of the N cap layer.
7. The method of manufacturing a pressure sensor according to any one of claims 4 to 6, wherein:
undoped GaN channel layer and undoped Al0.25Ga0.75The N cap layer grows through a molecular beam epitaxy technology;
etching the design positions of a source electrode and a drain electrode by utilizing an inductive coupling plasma technology in argon, wherein the technological parameters of the inductive coupling plasma technology comprise power of 300W, frequency of 2MHz, -90V self-bias voltage and pressure of 5 mTorr;
flowing nitrogen N at 850 ℃ by electron beam deposition2Depositing one metal or alloy of a plurality of metals in Ti/Al/Pt/Au after 50s to form contact electrodes of a source electrode and a drain electrode;
the Al is0.25Ga0.75The gate position size on the N cap layer is 10 × 50 μm;
and (3) carrying out size adjustment on the beta-type PVDF film at the position of the grid electrode by a micro-plotter.
8. The method of manufacturing a pressure sensor according to any one of claims 4 to 7, wherein:
the thickness of the GaN channel layer is 2 mu m;
the Al is0.25Ga0.75The thickness of the N cap layer is 250 nm;
the thickness of the beta-type PVDF film at the gate position when unstressed was 2 μm.
9. A pressure sensor, characterized in that,
the pressure sensor is provided with a SiC substrate layer;
the epitaxial layer grown on the substrate layer comprises a GaN channel layer and an AlGaN cap layer on the GAN channel layer, and a 2DEG channel is formed between the AlGaN cap layer and the GAN channel layer;
a source electrode and a drain electrode are respectively formed on the AlGaN cap layer;
and a beta-type PVDF film is arranged at the grid position of the AlGaN cap layer.
10. The pressure sensor of claim 9,
the first surface of the β type PVDF film is positively charged, and the second surface opposite to the first surface is negatively charged, wherein the first surface is tightly attached to the Al0.25Ga0.75The upper surface of the N cap layer enables the current I between the grid electrode and the drain electrode of the pressure sensordsIncreases with increasing pressure to which the β -type PVDF film is subjected;
alternatively, a first surface of the β -type PVDF film is positively charged and a second surface opposite to the first surface is negatively charged, wherein the second surface is closely attached to the Al0.25Ga0.75The upper surface of the N cap layer enables the current I between the grid electrode and the drain electrode of the pressure sensordsDecreases with increasing pressure to which the β -type PVDF film is subjected.
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| CN201610929260.6A CN106384749A (en) | 2016-10-31 | 2016-10-31 | Pressure sensor and making method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109211444A (en) * | 2018-09-25 | 2019-01-15 | 中国电子科技集团公司第十三研究所 | pressure sensor and preparation method thereof |
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|---|---|---|---|---|
| US20110068372A1 (en) * | 2007-09-18 | 2011-03-24 | University Of Florida Research Foundation, Inc. | Sensors using high electron mobility transistors |
| US20110137184A1 (en) * | 2008-08-19 | 2011-06-09 | Fan Ren | Pressure sensing |
| CN105470313A (en) * | 2014-08-12 | 2016-04-06 | 北京纳米能源与系统研究所 | Back-gate field effect transistor based on contact electrification |
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- 2016-10-31 CN CN201610929260.6A patent/CN106384749A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110068372A1 (en) * | 2007-09-18 | 2011-03-24 | University Of Florida Research Foundation, Inc. | Sensors using high electron mobility transistors |
| US20110137184A1 (en) * | 2008-08-19 | 2011-06-09 | Fan Ren | Pressure sensing |
| CN105470313A (en) * | 2014-08-12 | 2016-04-06 | 北京纳米能源与系统研究所 | Back-gate field effect transistor based on contact electrification |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109211444A (en) * | 2018-09-25 | 2019-01-15 | 中国电子科技集团公司第十三研究所 | pressure sensor and preparation method thereof |
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Application publication date: 20170208 |