CN109206134A - 一种高品质因数钛酸镁基微波介质陶瓷的制备方法 - Google Patents

一种高品质因数钛酸镁基微波介质陶瓷的制备方法 Download PDF

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CN109206134A
CN109206134A CN201811245100.5A CN201811245100A CN109206134A CN 109206134 A CN109206134 A CN 109206134A CN 201811245100 A CN201811245100 A CN 201811245100A CN 109206134 A CN109206134 A CN 109206134A
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quality factor
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magnesium titanate
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李玲霞
许振鹏
于仕辉
杜明昆
乔坚栗
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Tianjin University
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    • C04B35/46Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
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Abstract

本发明公开了一种高品质因数钛酸镁基微波介质陶瓷的制备方法,先将MgO、TiO2按化学计量式MgTiO3进行配料,经球磨、烘干、过筛后添加7wt%石蜡进行造粒,再用粉末压片机制成生坯,生坯于1225℃~1300℃烧结,制成高品质因数MgTiO3基微波介质陶瓷。本发明采用反应烧结方式,简化了工艺,节省了能源,使得MgTiO3基微波介质陶瓷的品质因数得到明显提高(Qf~221711GHz),并具有较低介电常数(εr~17.36)。

Description

一种高品质因数钛酸镁基微波介质陶瓷的制备方法
技术领域
本发明属于一种以成分为特征的陶瓷组合物,具体涉及一种优化传统烧结工艺、具有超低损耗特性的MgTiO3基微波介质陶瓷材料的制备方法,
背景技术
现代通信技术的不断发展,对元器件的小型化、集成化和模块化的要求日益迫切,对微波介质材料提出了更高的要求,微波介质陶瓷已成为近年来功能陶瓷最活跃的研究领域之一。其中,钛酸镁(MgTiO3)陶瓷作为一种传统的微波介质材料,在毫米波段仍然具有低介电常数、较高的品质因数等优异的微波介电性能。
优化传统烧结工艺是进一步改善陶瓷介电性能的重要方法,通过选择合适的烧结工艺,进一步的提升MgTiO3基微波介质陶瓷的品质因数,以制备具有超低损耗特性、符合低碳环保理念的MgTiO3基微波介质陶瓷。
发明内容
本发明的目的,在于进一步改善MgTiO3基微波介质陶瓷的介电性能,优化传统烧结工艺,提供一种实现品质因数(Qf)突破220000的MgTiO3基微波介质陶瓷材料。
本发明通过如下技术方案予以实现。
一种高品质因数钛酸镁基微波介质陶瓷的制备方法,具有如下步骤:
(1)将化学原料MgO、TiO2按化学计量式MgTiO3进行配料,放入聚酯球磨罐中,加入去离子水和氧化锆球后,球磨6小时;
(2)将步骤(1)球磨后的原料放入红外干燥箱中于100℃烘干,然后过40目筛;
(3)将步骤(2)过筛后的粉料,添加7wt%石蜡作为粘结剂,过80目筛进行造粒;
(4)将步骤(3)过筛后的粉料用粉末压片机以3MPa的压力制成生坯;
(5)将步骤(4)的生坯于1225℃~1300℃烧结,保温4小时,制成高品质因数MgTiO3基微波介质陶瓷。
所述步骤(1)采用行星式球磨机进行球磨,球磨机转速为400转/分。
所述步骤(3)的生坯直径为10mm,厚度为5mm。
所述步骤(5)的升温速率为5℃/min。
本发明采用反应烧结方式,降低了工艺复杂度,节省了能源,使得MgTiO3基微波介质陶瓷的品质因数得到明显提高(Qf~221711GHz),并具有较低介电常数(εr~17.36)。
具体实施方式
以下将结合具体实施例对本发明作进一步的详细描述,本发明不局限于下列实施例:
实施例1、2、3
首先,用电子天平称量MgO、TiO2,按摩尔比1:1配制MgTiO3原料,放入聚酯球磨罐中,加入去离子水和氧化锆球,混合后球磨6h,再于100℃烘干后过40目分样筛,所得粉料添加7wt%石蜡作为粘结剂,过80目筛进行造粒。
将造粒后的粉料在3MPa下压制成Ф10×5mm的圆片生坯,生坯经5℃/min分别升至1225℃、1250℃、1300℃烧结,保温4h,制得MgTiO3基微波介质陶瓷材料。
实施例1、2、3的区别仅在于烧结温度不同,其它制备工艺完全相同。
对比实施例1、2、3(采用传统烧结方式)
首先,用电子天平称量MgO、TiO2,按摩尔比1:1配制MgTiO3原料,放入聚酯球磨罐中,加入去离子水和氧化锆球,混合后球磨6h,再于100℃烘干后过40目分样筛。所得粉料再加入0.7wt%的PVA,混合后球磨12h,再于100℃烘干后过80目分样筛造粒。
将造粒后的粉料在3MPa下压制成Ф10×5mm的圆片生坯,生坯经5℃/min分别升至1225℃、1250℃、1300℃烧结,保温4h,制得MgTiO3基微波介质陶瓷材料。
对比实施例1、2、3的区别仅在于烧结温度不同,其它制备工艺完全相同。
通过网络分析仪测试所得制品的微波介电性能。
实施例1、2、3与对比实施例1、2、3的不同烧结温度及其微波介电性能详见表1。
表1
本发明并不局限于上述实施例,很多细节的变化是可能的,但这并不因此违背本发明的范围和精神。

Claims (4)

1.一种高品质因数钛酸镁基微波介质陶瓷的制备方法,具有如下步骤:
(1)将化学原料MgO、TiO2按化学计量式MgTiO3进行配料,放入聚酯球磨罐中,加入去离子水和氧化锆球后,球磨6小时;
(2)将步骤(1)球磨后的原料放入红外干燥箱中于100℃烘干,然后过40目筛;
(3)将步骤(2)过筛后的粉料,添加7wt%石蜡作为粘结剂,过80目筛进行造粒;
(4)将步骤(3)过筛后的粉料用粉末压片机以3MPa的压力制成生坯;
(5)将步骤(4)的生坯于1225℃~1300℃烧结,保温4小时,制成高品质因数MgTiO3基微波介质陶瓷。
2.根据权利要求1所述的一种高品质因数钛酸镁基微波介质陶瓷的制备方法,其特征在于,所述步骤(1)采用行星式球磨机进行球磨,球磨机转速为400转/分。
3.根据权利要求1所述的一种高品质因数钛酸镁基微波介质陶瓷的制备方法,其特征在于,所述步骤(3)的生坯直径为10mm,厚度为5mm。
4.根据权利要求1所述的一种高品质因数钛酸镁基微波介质陶瓷的制备方法,其特征在于,所述步骤(5)的升温速率为5℃/min。
CN201811245100.5A 2018-10-24 2018-10-24 一种高品质因数钛酸镁基微波介质陶瓷的制备方法 Pending CN109206134A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115611625A (zh) * 2022-11-15 2023-01-17 南京国睿微波器件有限公司 一种钛酸镁基微波介质陶瓷及其制备工艺

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JPH03261654A (ja) * 1990-03-13 1991-11-21 Matsushita Electric Ind Co Ltd 電圧依存性非直線抵抗体磁器組成物およびバリスタの製造方法
JPH0873266A (ja) * 1994-08-31 1996-03-19 Sony Corp 誘電体セラミクスの製造方法
CN102153343A (zh) * 2011-01-10 2011-08-17 天津大学 采用反应烧结法制备高q值钛酸镁基微波介质陶瓷的方法
CN102219500A (zh) * 2011-04-26 2011-10-19 天津大学 中温烧结高品质因数的钛酸镁基微波介质陶瓷
CN103979952A (zh) * 2014-04-28 2014-08-13 天津大学 采用退火方法制备高品质因数钛酸镁微波介质陶瓷

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03261654A (ja) * 1990-03-13 1991-11-21 Matsushita Electric Ind Co Ltd 電圧依存性非直線抵抗体磁器組成物およびバリスタの製造方法
JPH0873266A (ja) * 1994-08-31 1996-03-19 Sony Corp 誘電体セラミクスの製造方法
CN102153343A (zh) * 2011-01-10 2011-08-17 天津大学 采用反应烧结法制备高q值钛酸镁基微波介质陶瓷的方法
CN102219500A (zh) * 2011-04-26 2011-10-19 天津大学 中温烧结高品质因数的钛酸镁基微波介质陶瓷
CN103979952A (zh) * 2014-04-28 2014-08-13 天津大学 采用退火方法制备高品质因数钛酸镁微波介质陶瓷

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115611625A (zh) * 2022-11-15 2023-01-17 南京国睿微波器件有限公司 一种钛酸镁基微波介质陶瓷及其制备工艺

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Application publication date: 20190115