CN109206134A - 一种高品质因数钛酸镁基微波介质陶瓷的制备方法 - Google Patents
一种高品质因数钛酸镁基微波介质陶瓷的制备方法 Download PDFInfo
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Abstract
本发明公开了一种高品质因数钛酸镁基微波介质陶瓷的制备方法,先将MgO、TiO2按化学计量式MgTiO3进行配料,经球磨、烘干、过筛后添加7wt%石蜡进行造粒,再用粉末压片机制成生坯,生坯于1225℃~1300℃烧结,制成高品质因数MgTiO3基微波介质陶瓷。本发明采用反应烧结方式,简化了工艺,节省了能源,使得MgTiO3基微波介质陶瓷的品质因数得到明显提高(Qf~221711GHz),并具有较低介电常数(εr~17.36)。
Description
技术领域
本发明属于一种以成分为特征的陶瓷组合物,具体涉及一种优化传统烧结工艺、具有超低损耗特性的MgTiO3基微波介质陶瓷材料的制备方法,
背景技术
现代通信技术的不断发展,对元器件的小型化、集成化和模块化的要求日益迫切,对微波介质材料提出了更高的要求,微波介质陶瓷已成为近年来功能陶瓷最活跃的研究领域之一。其中,钛酸镁(MgTiO3)陶瓷作为一种传统的微波介质材料,在毫米波段仍然具有低介电常数、较高的品质因数等优异的微波介电性能。
优化传统烧结工艺是进一步改善陶瓷介电性能的重要方法,通过选择合适的烧结工艺,进一步的提升MgTiO3基微波介质陶瓷的品质因数,以制备具有超低损耗特性、符合低碳环保理念的MgTiO3基微波介质陶瓷。
发明内容
本发明的目的,在于进一步改善MgTiO3基微波介质陶瓷的介电性能,优化传统烧结工艺,提供一种实现品质因数(Qf)突破220000的MgTiO3基微波介质陶瓷材料。
本发明通过如下技术方案予以实现。
一种高品质因数钛酸镁基微波介质陶瓷的制备方法,具有如下步骤:
(1)将化学原料MgO、TiO2按化学计量式MgTiO3进行配料,放入聚酯球磨罐中,加入去离子水和氧化锆球后,球磨6小时;
(2)将步骤(1)球磨后的原料放入红外干燥箱中于100℃烘干,然后过40目筛;
(3)将步骤(2)过筛后的粉料,添加7wt%石蜡作为粘结剂,过80目筛进行造粒;
(4)将步骤(3)过筛后的粉料用粉末压片机以3MPa的压力制成生坯;
(5)将步骤(4)的生坯于1225℃~1300℃烧结,保温4小时,制成高品质因数MgTiO3基微波介质陶瓷。
所述步骤(1)采用行星式球磨机进行球磨,球磨机转速为400转/分。
所述步骤(3)的生坯直径为10mm,厚度为5mm。
所述步骤(5)的升温速率为5℃/min。
本发明采用反应烧结方式,降低了工艺复杂度,节省了能源,使得MgTiO3基微波介质陶瓷的品质因数得到明显提高(Qf~221711GHz),并具有较低介电常数(εr~17.36)。
具体实施方式
以下将结合具体实施例对本发明作进一步的详细描述,本发明不局限于下列实施例:
实施例1、2、3
首先,用电子天平称量MgO、TiO2,按摩尔比1:1配制MgTiO3原料,放入聚酯球磨罐中,加入去离子水和氧化锆球,混合后球磨6h,再于100℃烘干后过40目分样筛,所得粉料添加7wt%石蜡作为粘结剂,过80目筛进行造粒。
将造粒后的粉料在3MPa下压制成Ф10×5mm的圆片生坯,生坯经5℃/min分别升至1225℃、1250℃、1300℃烧结,保温4h,制得MgTiO3基微波介质陶瓷材料。
实施例1、2、3的区别仅在于烧结温度不同,其它制备工艺完全相同。
对比实施例1、2、3(采用传统烧结方式)
首先,用电子天平称量MgO、TiO2,按摩尔比1:1配制MgTiO3原料,放入聚酯球磨罐中,加入去离子水和氧化锆球,混合后球磨6h,再于100℃烘干后过40目分样筛。所得粉料再加入0.7wt%的PVA,混合后球磨12h,再于100℃烘干后过80目分样筛造粒。
将造粒后的粉料在3MPa下压制成Ф10×5mm的圆片生坯,生坯经5℃/min分别升至1225℃、1250℃、1300℃烧结,保温4h,制得MgTiO3基微波介质陶瓷材料。
对比实施例1、2、3的区别仅在于烧结温度不同,其它制备工艺完全相同。
通过网络分析仪测试所得制品的微波介电性能。
实施例1、2、3与对比实施例1、2、3的不同烧结温度及其微波介电性能详见表1。
表1
本发明并不局限于上述实施例,很多细节的变化是可能的,但这并不因此违背本发明的范围和精神。
Claims (4)
1.一种高品质因数钛酸镁基微波介质陶瓷的制备方法,具有如下步骤:
(1)将化学原料MgO、TiO2按化学计量式MgTiO3进行配料,放入聚酯球磨罐中,加入去离子水和氧化锆球后,球磨6小时;
(2)将步骤(1)球磨后的原料放入红外干燥箱中于100℃烘干,然后过40目筛;
(3)将步骤(2)过筛后的粉料,添加7wt%石蜡作为粘结剂,过80目筛进行造粒;
(4)将步骤(3)过筛后的粉料用粉末压片机以3MPa的压力制成生坯;
(5)将步骤(4)的生坯于1225℃~1300℃烧结,保温4小时,制成高品质因数MgTiO3基微波介质陶瓷。
2.根据权利要求1所述的一种高品质因数钛酸镁基微波介质陶瓷的制备方法,其特征在于,所述步骤(1)采用行星式球磨机进行球磨,球磨机转速为400转/分。
3.根据权利要求1所述的一种高品质因数钛酸镁基微波介质陶瓷的制备方法,其特征在于,所述步骤(3)的生坯直径为10mm,厚度为5mm。
4.根据权利要求1所述的一种高品质因数钛酸镁基微波介质陶瓷的制备方法,其特征在于,所述步骤(5)的升温速率为5℃/min。
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CN115611625A (zh) * | 2022-11-15 | 2023-01-17 | 南京国睿微波器件有限公司 | 一种钛酸镁基微波介质陶瓷及其制备工艺 |
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JPH03261654A (ja) * | 1990-03-13 | 1991-11-21 | Matsushita Electric Ind Co Ltd | 電圧依存性非直線抵抗体磁器組成物およびバリスタの製造方法 |
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CN115611625A (zh) * | 2022-11-15 | 2023-01-17 | 南京国睿微波器件有限公司 | 一种钛酸镁基微波介质陶瓷及其制备工艺 |
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