CN109206123A - 一种高压并联电抗器气隙填充用的合成铝瓷垫块及其制备方法 - Google Patents
一种高压并联电抗器气隙填充用的合成铝瓷垫块及其制备方法 Download PDFInfo
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Abstract
本发明提供了一种高压并联电抗器气隙填充用的合成铝瓷垫块及其制备方法,所述垫块包括按质量百分比计的下述成分:氧化铝60‑70%、氧化铬10‑15%、氟化镁5‑10%、二氧化硅3‑6%、氧化钙2‑3%、表面活性剂5‑7%、粘结剂1‑2%和润滑剂0.5‑1%;所述制备方法包括:雾化制粉;凝胶压延成型;脉冲电流烧结;抛光和镀膜;本发明提供的合成铝瓷垫块的强度高,弹性模量大,密度小且耐油性好。
Description
技术领域
本发明涉及一种气隙填充垫块,具体涉及一种高压并联电抗器气隙填充用的合成铝瓷垫块及其制备方法。
背景技术
电抗器分为空芯电抗器和铁芯电抗器。
铁芯电抗器包括铁芯、绕组、气隙材料、绝缘油和箱体;其中,气隙填充材料的添加目的是为了减小铁心磁导率,控制电抗器的电感量。
现有电抗器铁心柱的气隙填充材料以天然岩石为主,但由于天然岩石的力学强度低和弹性模量小,导致电抗器铁芯产生的振动噪声较大;密度较大,这在一定程度上增加了电抗器的重量;且天然岩含有与绝缘油反应的物质,造成电抗器内部电磁场不稳定,容易引起电抗器故障。
因此,需要对现有的电抗器的气体填充材料做改进,提供一种强度高,弹性模量大,密度小且耐油性好的电抗器的气体填充材料。
发明内容
为了满足现有技术的需要,本发明提供一种高压并联电抗器气隙填充用的合成铝瓷垫块及其制备方法,所述合成铝瓷垫块的强度高,弹性模量大,密度小且耐油性好。
本发明通过如下技术方案实现:
一种高压并联电抗器气隙填充用的合成铝瓷垫块,按质量百分比计,所述垫块包括:氧化铝60-70%、氧化铬10-15%、氟化镁5-10%、二氧化硅3-6%、氧化钙2-3%、表面活性剂5-7%、粘结剂1-2%和润滑剂0.5-1%。
优选的,所述垫块包括:氧化铝65-70%、氧化铬10-13%、氟化镁5-8%、二氧化硅3-4%、氧化钙2-3%、表面活性剂5-6%、粘结剂1-2%和润滑剂0.5-1%。
优选的,所述垫块包括:氧化铝65%、氧化铬13%、氟化镁6%、二氧化硅4%、氧化钙2.4%、表面活性剂6%、粘结剂1.3%和润滑剂0.7%。
优选的,所述氧化铝和氧化铬的粒径分别为5-10nm和150-200nm。
优选的,所述粘结剂和润滑剂分别为PVA和硬脂酸。
优选的,所述表面活性剂包括丙二醇脂肪酸酯和琥珀酸二辛酯磺酸钠。
优选的,所述垫块的抗压强度大于150MPa,泊松比小于0.1,弹性模量大于190GPa。
一种高压并联电抗器气隙填充用的合成铝瓷垫块的制备方法,其包括如下步骤:
1)雾化制粉:于雾化装置中将混合原料制成粉末;
2)凝胶压延成型:用注入凝胶化剂的垫块模具压制成型所述粉末,得到铝瓷垫块成型体;
3)烧结:用脉冲电流烧结所述垫块成型体,得到合成铝瓷垫块;
4)抛光:以加工刀具磨削所述合成铝瓷垫块,得到抛光的合成铝瓷垫块;
5)镀膜:真空条件下,将抛光处理的合成铝瓷垫块表面溅射镀膜后于1200-1580℃下加热0.5-1h,得到强化的合成铝瓷垫块。
所述脉冲电流烧结包括:将所述垫块成型体于1400-1500℃下保温40-50min后升温至1600-1800℃保温10-15min。
优选的,所述抛光包括:在偏离合成铝瓷垫块的抛光面一定角度的方向,以金刚石刀具反复磨削所述垫块垫块的表面。
优选的,所述角度范围为20-30°。
优选的,所述溅射镀膜包括:于真空溅射镀膜室中,以液态二氧化硅喷涂所述抛光处理的合成铝瓷垫块的表面。
与最接近的现有技术比,本发明的技术方案具有如下有益效果:
(1)本发明提供的合成铝瓷垫块的抗压强度高,弹性模量大,相对于现有的天然岩石材料,大大降低了电抗器的振动与噪声。
(2)本发明提供的合成铝瓷垫块的耐油性好,保证了抗器内部电磁场的稳定,减少了电抗器发生故障的风险。
(3)本发明提供的合成铝瓷垫块的耐老化性能好,能够在-25℃到120℃之间保持电抗器的性能稳定。
(4)本发明提供的合成铝瓷垫块的密度小,重量轻;泊松比小,不易变形。
(5)本发明提供的技术方案,于合成铝瓷垫块中添加氧化铬和氟化镁,活化了氧化铝的晶格,利于氧化铝的脉冲电流烧结,大大提高了合成铝瓷垫块的硬度和强度。
具体实施方式
下面通过具体实施例对本发明的技术方案做进一步说明:
实施例1
一种高压并联电抗器气隙填充用的合成铝瓷垫块,所述垫块的抗压强度大于150MPa,泊松比小于0.1,弹性模量大于190GPa;按质量百分比计,所述垫块包括下述成分:粒径5nm的氧化铝60%、粒径150nm的氧化铬15%、氟化镁10%、二氧化硅6%、氧化钙2%、丙二醇脂肪酸酯5%、PVA1%和硬脂酸0.5%;
所述合成铝瓷垫块的制法包括如下步骤:
1)雾化制粉:于雾化装置中,以1.6MPa的氩气喷射混合原料,得到生料粉末;
2)凝胶压延成型:用注入凝胶化剂的垫块模具压制成型所述粉末,得到铝瓷垫块成型体;
3)烧结:将所述垫块成型体于1400℃下保温40min后升温至1600℃保温10min,得到合成铝瓷垫块;
4)抛光:在偏离合成铝瓷垫块的抛光面20°角的方向,以金刚石刀具对所述垫块垫块的表面反复磨削,得到抛光的合成铝瓷垫块;
5)镀膜:于真空溅射镀膜室中,以液态二氧化硅喷涂所述抛光处理的合成铝瓷垫块的表面,然后于1200℃下加热0.5h,得到强化的合成铝瓷垫块。
实施例2
一种高压并联电抗器气隙填充用的合成铝瓷垫块,所述垫块的抗压强度大于150MPa,泊松比小于0.1,弹性模量大于190GPa;按质量百分比计,所述垫块包括下述成分:粒径7nm的氧化铝65%、粒径175nm的氧化铬13%、氟化镁6%、二氧化硅4%、氧化钙2.4%、琥珀酸二辛酯磺酸钠6%、PVA1.3%和硬脂酸0.7%;
所述合成铝瓷垫块的制法包括如下步骤:
1)雾化制粉:于雾化装置中,以1.7MPa的氩气喷射混合原料,得到生料粉末;
2)凝胶压延成型:用注入凝胶化剂的垫块模具压制成型所述粉末,得到铝瓷垫块成型体;
3)烧结:将所述垫块成型体于1440℃下保温43min后升温至1680℃保温12min,得到合成铝瓷垫块;
4)抛光:在偏离合成铝瓷垫块的抛光面25°角的方向,以金刚石刀具对所述垫块垫块的表面反复磨削,得到抛光的合成铝瓷垫块;
5)镀膜:于真空溅射镀膜室中,以液态二氧化硅喷涂所述抛光处理的合成铝瓷垫块的表面,然后于1300℃下加热0.7h,得到强化的合成铝瓷垫块。
实施例3
一种高压并联电抗器气隙填充用的合成铝瓷垫块,所述垫块的抗压强度大于150MPa,泊松比小于0.1,弹性模量大于190GPa;按质量百分比计,所述垫块包括下述成分:粒径9nm的氧化铝68%、粒径188nm的氧化铬14%、氟化镁8%、二氧化硅5%、氧化钙2.7%、琥珀酸二辛酯磺酸钠6.5%、PVA 1.8%和硬脂酸0.9%;
所述合成铝瓷垫块的制法包括如下步骤:
1)雾化制粉:于雾化装置中,以1.8MPa的氩气喷射混合原料,得到生料粉末;
2)凝胶压延成型:用注入凝胶化剂的垫块模具压制成型所述粉末,得到铝瓷垫块成型体;
3)烧结:将所述垫块成型体于1480℃下保温47min后升温至1750℃保温14min,得到合成铝瓷垫块;
4)抛光:在偏离合成铝瓷垫块的抛光面28°角的方向,以金刚石刀具对所述垫块垫块的表面反复磨削,得到抛光的合成铝瓷垫块;
5)镀膜:于真空溅射镀膜室中,以液态二氧化硅喷涂所述抛光处理的合成铝瓷垫块的表面,然后于1450℃下加热0.8h,得到强化的合成铝瓷垫块。
实施例4
一种高压并联电抗器气隙填充用的合成铝瓷垫块,所述垫块的抗压强度大于150MPa,泊松比小于0.1,弹性模量大于190GPa;按质量百分比计,所述垫块包括下述成分:粒径10的氧化铝70%、粒径200nm的氧化铬10%、氟化镁5%、二氧化硅3%、氧化钙3%、丙二醇脂肪酸酯5%、PVA 2%和硬脂酸1%;
所述合成铝瓷垫块的制法包括如下步骤:
1)雾化制粉:于雾化装置中,以1.9MPa的氩气喷射混合原料,得到生料粉末;
2)凝胶压延成型:用注入凝胶化剂的垫块模具压制成型所述粉末,得到铝瓷垫块成型体;
3)烧结:将所述垫块成型体于1500℃下保温50min后升温至1800℃保温15min,得到合成铝瓷垫块;
4)抛光:在偏离合成铝瓷垫块的抛光面30°角的方向,以金刚石刀具对所述垫块垫块的表面反复磨削,得到抛光的合成铝瓷垫块;
5)镀膜:于真空溅射镀膜室中,以液态二氧化硅喷涂所述抛光处理的合成铝瓷垫块的表面,然后于1580℃下加热1h,得到强化的合成铝瓷垫块。
分别对大理石和本发明的合成铝瓷垫进行性能测试,得出本发明提供的的合成铝瓷垫块和大理石的性能对比如下表:
项目 | 合成铝瓷垫块 | 大理石 |
密度(g/cm<sup>3</sup>) | 2.73 | 3.74 |
抗压强度(MPa) | 176 | 69 |
泊松比 | 0.016 | 0.095 |
弹性模量(GPa) | 192.45 | 63.77 |
表1
以上实施例仅用以说明本发明的技术方案而非对其限制,尽管参照上述实施例对本发明进行了详细的说明,所属领域的普通技术人员依然可以对本发明的具体实施方式进行修改或者等同替换,这些未脱离本发明精神和范围的任何修改或者等同替换,均在申请待批的本发明的权利要求保护范围之内。
Claims (12)
1.一种高压并联电抗器气隙填充用的合成铝瓷垫块,其特征在于,按质量百分比计,所述垫块包括:氧化铝60-70%、氧化铬10-15%、氟化镁5-10%、二氧化硅3-6%、氧化钙2-3%、表面活性剂5-7%、粘结剂1-2%和润滑剂0.5-1%。
2.如权利要求1所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块,其特征在于,所述垫块包括:氧化铝65-70%、氧化铬10-13%、氟化镁5-8%、二氧化硅3-4%、氧化钙2-3%、表面活性剂5-6%、粘结剂1-2%和润滑剂0.5-1%。
3.如权利要求1所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块,其特征在于,所述垫块包括:氧化铝65%、氧化铬13%、氟化镁6%、二氧化硅4%、氧化钙2.4%、表面活性剂6%、粘结剂1.3%和润滑剂0.7%。
4.如权利要求1所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块,其特征在于,所述氧化铝和氧化铬的粒径分别为5-10nm和150-200nm。
5.如权利要求1所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块,其特征在于,所述粘结剂和润滑剂分别为PVA和硬脂酸。
6.如权利要求1所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块,其特征在于,所述表面活性剂包括丙二醇脂肪酸酯和琥珀酸二辛酯磺酸钠。
7.如权利要求1所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块,其特征在于,所述垫块的抗压强度大于150MPa,泊松比小于0.1,弹性模量大于190GPa。
8.一种高压并联电抗器气隙填充用的合成铝瓷垫块的制备方法,其特征在于,包括如下步骤:
1)雾化制粉:于雾化装置中将混合原料制成粉末;
2)凝胶压延成型:用注入凝胶化剂的垫块模具压制成型所述粉末,得到铝瓷垫块成型体;
3)烧结:用脉冲电流烧结所述垫块成型体,得到合成铝瓷垫块;
4)抛光:以加工刀具磨削所述合成铝瓷垫块,得到抛光的合成铝瓷垫块;
5)镀膜:真空条件下,将抛光处理的合成铝瓷垫块表面溅射镀膜后于1200-1580℃下加热0.5-1h,得到强化的合成铝瓷垫块。
9.如权利要求8所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块的制备方法,其特征在于,所述脉冲电流烧结包括:将所述垫块成型体于1400-1500℃下保温40-50min后升温至1600-1800℃保温10-15min。
10.如权利要求8所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块的制备方法,其特征在于,所述抛光包括:在偏离合成铝瓷垫块的抛光面一定角度的方向,以金刚石刀具反复磨削所述垫块垫块的表面。
11.如权利要求10所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块的制备方法,其特征在于,所述角度范围为20-30°。
12.如权利要求8所述的一种高压并联电抗器气隙填充用的合成铝瓷垫块的制备方法,其特征在于,所述溅射镀膜包括:于真空溅射镀膜室中,以液态二氧化硅喷涂所述抛光处理的合成铝瓷垫块的表面。
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