CN109196632A - 晶片处理器门接口 - Google Patents
晶片处理器门接口 Download PDFInfo
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- CN109196632A CN109196632A CN201780032862.4A CN201780032862A CN109196632A CN 109196632 A CN109196632 A CN 109196632A CN 201780032862 A CN201780032862 A CN 201780032862A CN 109196632 A CN109196632 A CN 109196632A
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Abstract
处理系统包括至少一个处理器,所述处理器具有用于保持处理液体的罐。在罐上方的清洁组件设有上部壳体和下部壳体,所述上部壳体具有至少一个上部壳体喷射喷嘴,所述下部壳体具有至少一个下部壳体喷射喷嘴,其中下部壳体在上部壳体下方。上部壳体与下部壳体之间的门能够经由致动器从打开位置移动到关闭位置,其中在所述打开位置中通过清洁组件的装载口是打开的,并且其中在所述关闭位置中装载口是关闭的。门大部分地防止上部壳体中使用的液体向下移动到罐中的处理液体中,并且还可改善系统中的气体流动。
Description
技术领域
本发明的领域是用于处理半导体材料晶片和用于微电子装置的类似的工件或基板的处理器、系统和方法。
背景技术
诸如半导体装置的微电子装置通常被制造在硅或其他半导体材料晶片之上和/或之中。经由光刻在晶片表面上形成图案化的层。通过化学剥离移除在光刻步骤中使用的光刻胶。此操作可能是相对耗时的过程,其中晶片被浸入加热溶剂浴中,加热溶剂浴例如在湿法工作台或其他设备中。在化学剥离的步骤之后,必须在不污染制造环境并且有利地也不以冲洗或清洁液体稀释加热溶剂浴的情况下从晶片移除溶剂(或其他处理液体)。
从而,在提供用于处理晶片的系统和方法方面仍然存在工程挑战。
发明内容
晶片处理系统包括至少一个处理器,所述处理器具有用于保持处理液体的罐。在罐上方的清洁组件设有上部壳体和下部壳体,所述上部壳体具有至少一个上部壳体喷射喷嘴,所述下部壳体具有至少一个下部壳体喷射喷嘴,其中下部壳体在上部壳体下方。上部壳体与下部壳体之间的门能够经由致动器从打开位置移动到关闭位置,其中在所述打开位置中通过清洁组件的装载口是打开的,并且在所述关闭位置中装载口是关闭的。门大部分地防止上部壳体中使用的液体向下移动到罐中的处理液体中,并且还可改善系统中的气体流动。
附图说明
图1是处理系统的立体图。
图2是图1所示的系统的侧视图。
图3是图1和图2所示的系统的罐的立体图。
图4是沿着图3的线4-4取得的剖视图。
图5是图1和图2所示的头部的立体图。
图6是替代清洁组件的顶部立体图,所述替代清洁组件具有处于关闭位置的门。
图7是如图6所示的清洁组件的立体剖视图。
图8是如图6和图7所示的清洁组件的侧视剖视图。
图9是图6至图7的清洁组件的侧视剖视图,其中门处于打开位置。
图10是替代设计的立体图。
图11是图10的设计的放大侧视图,其中门处于关闭位置。
具体实施方式
如图1所示,处理系统20在外壳22内具有第一和第二晶片处理器28。外壳22可具有进出开口24和26,以允许诸如半导体晶片的工件移动进出处理系统20,其中工件一般是是经由机械手而移动。进出开口24和26可具有闭合件,例如可移动面板或窗,以便在处理期间关闭进出开口24和26,以更好地将蒸汽或气体容纳在外壳22内。外壳22还可设有空气入口和排气连接件,以提供通过外壳的空气的受控流动。
如图1和图2所示,每个处理器28具有头部50,头部50用于装载晶片100进出处理罐30。取决于所执行的具体处理,诸如旋转冲洗干燥器的副腔室48可与外壳内的每个处理器28相关联。
现在转向图3和图4,清洁组件32设在处理罐30的顶部。清洁组件32(若被使用的话)通常包括清洁壳体34和冲洗壳体36,所述清洁壳体由下部或清洁壳体排放通道40环绕,所述冲洗壳体由上部或冲洗壳体排放通道38环绕。排放通道38和40连接到设施排放口,并可选地连接到真空源。处理罐还包括一个或多个液体入口和一个或多个液体排放口,以用于填充和排放处理液体或者提供通过处理罐的处理液体的流动。
如图4所最佳显示,处理罐30中的转子56具有多个臂58,所述臂从中心毂部(hub)62径向向外延伸,其中保持器60位于每个臂58的外端处。电动机64连接到转子56,以在处理罐30中旋转转子56。
在使用中,处理液体(通常为溶剂,例如二甲基亚砜(dimethyl sulfoxide,DMSO))被泵送到处理罐30中,使得处理罐30被填充至例如容积的50%至90%。保持晶片100的头部50降低到在处理罐30顶部处的装载口54。头部50将晶片100传递到转子56上的保持器60。保持器60接合晶片100的背侧和/或边缘,其中晶片100的正面或装置面朝上。电动机64经致动以使转子56旋转,以圆形路径移动晶片100通过处理罐30中的处理液体。随着这种移动,后续的保持器60移动到装载口54中以接收后续的晶片100。
电动机64以某个速率旋转转子56,所述速率允许晶片100保持浸没在处理液体中的时间间隔足以完成晶片的处理(通常为1至30分钟)。随着转子56继续旋转,经处理的晶片100返回到装载口54,并经由头部50从处理罐移除。类似地处理后续的晶片100。
根据具体处理和所使用的处理液体,晶片100可接着在冲洗壳体36中冲洗,以移除残留的处理液体。用作冲洗液体的第一液体可从在冲洗壳体36中的冲洗喷嘴喷射到晶片和/或头部50上。通常,头部50也旋转晶片100以甩掉冲洗液体。在清洁组件32内执行的可选的第二步骤中,头部可将晶片100升高到清洁壳体34中,其中在清洁壳体34晶片进一步经由第二液体或清洁液体(例如去离子水)的喷射来清洁并且/或者被干燥。对于处理液体是溶剂的应用(例如光刻胶剥离(photoresist strip)),晶片100可进一步经由副腔室48(例如旋转冲洗干燥器)清洁和干燥。晶片100接着被移出外壳22以进一步传送或处理。系统20和处理罐30的操作一般经由电脑控制,以提供更均匀的处理。
图5示出替代的头部120,替代的头部120类似于头部50,并且在头部转子124上具有指状件122,指状件122适于将晶片100保持在大致示出于140处的晶片保持位置,一般在头部120的头部转子124的下方几厘米处。头部120上的头部电动机126旋转头部转子124。冲洗臂128从冲洗毂部130延伸出来,冲洗毂部130附接到不旋转的头部120的框架。冲洗臂128上的冲洗喷嘴132指向晶片保持位置。在使用中,当晶片保持在晶片保持位置中时,冲洗液体通过冲洗毂部130和冲洗臂128被泵送到冲洗喷嘴,以冲洗晶片100的朝上正面。
图6至图9示出替代的清洁组件150,替代的清洁组件150可用来代替图3和图4所示的清洁组件32。如图6和图7所示,清洁组件150在盖板(deck plate)154的顶部上具有上部壳体或第一壳体152。门158能够经由门致动器160在门壳体156中水平地移动到打开和关闭位置。门158可设为矩形平板,所述矩形平板具有圆形开口,所述圆形开口大致与图4所示的装载口54的直径匹配。门158可被支撑在直线轴承164上。如果罐30中的处理液体放出蒸汽,例如当处理液体是加热至110℃至120℃的溶剂时,来自门壳体156的排气管线174可连接到设施排气口或真空源,以用例如500至900升/分钟的流量排出蒸汽。可在门158的后端提供短直立腿部159,以将门158附接到门致动器160和/或用于引导空气流动通过门壳体156。门158可与门壳体156的上表面和下表面竖直隔开,以允许空气在门处于打开位置时在门158的上方和下方流动通过门壳体156。
下部壳体或第二壳体170定位在处理罐30的顶部上并附接到处理罐30上。下部壳体170可具有与上部壳体152相同的尺寸和形状。两个壳体152和170均具有圆锥形渐缩的侧壁,如图7至图9所示,以将从晶片100甩掉的液体引导到排放口168。两个壳体152和170还均具有在共同中心竖直轴线上对准的圆形中心开口,以允许头部50或120竖直移动通过清洁组件150,以将晶片100装载进入槽30中和从罐30卸载出来。净化气体管线176可例如以20至40升/分钟的速率将净化气体(例如氮)提供到下部壳体170中。
如图7所示,倾斜轮缘(angled rim)162设在上部壳体152内的门壳体156的底板(floor)上。倾斜轮缘162的高度在远侧(图7至图9中的右侧)比在近侧(图7至图9中的左侧)更大,其中倾斜轮缘162的顶表面提供环形倾斜门座表面。如图9所示,门158以稍微倾斜的角度定向(从近侧到远侧倾斜)定向。当门如图9所示地处于打开位置时,倾斜座表面提供门158的底表面与倾斜轮缘162之间的间隔。结果,门158在门移动期间不抵靠座表面滑动或刮擦。
在门158处于关闭位置时,如图7和图8所示,倾斜座表面在行进结束处提供近似接触以限制图11所示的门与倾斜轮缘162之间的间隙190,以减少从罐30的蒸发并且减少周围空气溢入罐30中。门158在处于关闭位置时,不需要与倾斜轮缘162实际密封。在所示的设计中,处于关闭位置的门关闭装载口,但不密封装载口。而是,当处于关闭位置时,门158可完全或部分地接触倾斜轮缘162,或者通过例如0.5mm至1mm的间隙190与倾斜轮缘162间隔开来。结果,即使门158处于关闭位置,排气管线174也继续从罐30中的处理液体排出蒸气连同净化气体(如果使用净化气体的话),虽然相较于门158打开时的流量是减少的。在门158关闭但不密封装载口54的设计中,不需要诸如O形环、垫圈等弹性密封部件,并且门158不正向地压靠倾斜轮缘162或其他表面。因此降低维护需要,特别是其中处理液体(例如加热溶剂)是化学反应的。
在典型的操作中,门158经由门致动器160移动到图9所示的打开位置。头部50或120竖直向下移动通过清洁组件150,并将晶片100传送到在装载口54下方对准的保持器60上。保持器60可具有主动致动器驱动的指状件或用于保持晶片100的边缘的其他元件。或者,保持器60可具有被动元件,所述被动元件经由与头部50或120的相互作用而移动,以用于抓握和保持晶片。
电动机64使转子56旋转以将经处理的晶片移动成与装载口54对准,并且头部50或120拾取经处理的晶片。头部接着向上移动以将经处理的晶片定位在下部壳体170中。门158保持在打开位置。下部壳体170中的下部喷射喷嘴172将冲洗液体喷射到晶片100上,同时头部50或120旋转晶片100,以从晶片移除残留的处理液体。晶片100上的颗粒,例如从晶片100蚀刻掉的固体光刻胶的片也被移除。倾斜的侧壁和下部壳体170的底板引导并收集从晶片甩掉的液体。如果冲洗液体与罐中的液体相同,则可允许这些收集的液体流回到罐中。如果冲洗液体与罐中的液体不同,则这些收集的液体可经由图7所示的下部壳体排放管线178从下部壳体170移除,所述下部壳体排放管线连接到设施排放口。
在对下部壳体170中的晶片100进行此冲洗处理期间,如果使用净化气体的话,净化气体经由净化气体管线176被泵送到下部壳体170中,并且排气管线174也被打开。结果,从罐30中的处理液体放出的蒸汽基本上经由排气管线174移除,并且基本上经由净化气体流、净化气体流和在盖与下部壳体170的顶部之间的小间隙190的组合而避免周围空气流入罐中并与处理液体反应。
头部50或120接着向上移动以将晶片100定位在上部壳体152中。门致动器160关闭门158。净化和排气管线(若有使用的话)保持开启。当头部旋转晶片的同时,上部喷射喷嘴166将清洁液体(例如去离子水)喷射到晶片100上。使用过的清洁液体经由排放口168被收集并且从上部壳体152移除。如同图3和图4所示的清洁组件32,在遵循上述步骤使用清洁组件150时,晶片100可接着经由副腔室48(例如旋转冲洗干燥器)进一步清洁和干燥。晶片100接着被移出外壳22以便进一步传送或处理。
处于关闭位置的门防止清洁液体进入罐30,并且也可有助于有效地从罐30排放蒸气并限制处理液体的蒸发。相应地,当系统20处于闲置状态,门158关闭并且净化和排气管线打开。处于关闭位置的门158也关闭装载口54,从而防止进入罐30的任何进出或视线。头部50或转子56可具有直径,所述直径小于装载口54的直径1mm至6mm,使得在装载/卸载和清洁步骤期间,当头部在门158的水平(level)下方时,即使门打开也大体上没有视线进入到罐30中。
上方关于图3和图4讨论的清洁组件32的装载口54可类似地具有装载口门,所述装载口门能够从第一位置移动到第二位置,其中在第一位置中,装载口门关闭并密封装载口,在第二位置中,装载口是打开的。
在图10和图11所示的替代设计中,在门壳体156的中点附近设有第一排气口182,并且第二排气口184和第三排气口186连接到门壳体156的前端中。排气口184和186可竖直定位,使得当门158关闭时,排气口184和186从门158的上方和下方抽取空气。例如,门158可位于排气口184和186的竖直中心线处。还是如图10所示,净化气体管线176可在偏离中心位置处与下部壳体170交会,以避免使净化气体直接冲击到下部壳体170中的晶片上,从而降低晶片的颗粒污染的可能性。净化气体管线176以及排气口位于罐30的一侧,而不是直接在罐30上方,以减少来自罐的蒸发。
上述的处理系统20有效地用以下配置容纳蒸气:门158关闭,并且头部50在罐30外或头部50在上部壳体152中保持晶片,以及门158打开,其中头部50在罐30外,或头部50在下部壳体170中保持晶片,或头部处于完全下方位置,以用于将晶片装载进入罐30和从罐30卸载出来。
如本文所使用地,晶片泛指硅或其他半导体材料晶片,以及基板上形成有微型装置的其他基板。
Claims (15)
1.一种处理系统,包括:
处理器,所述处理器具有罐,所述罐用于保持处理液体;
清洁组件,所述清洁组件在所述罐上方,其中所述清洁组件包括:
上部壳体,所述上部壳体具有至少一个上部壳体喷射喷嘴;
下部壳体,所述下部壳体具有至少一个下部壳体喷射喷嘴,其中所述下部壳体在所述上部壳体的下方;
门,所述门在所述上部壳体与所述下部壳体之间,其中所述门能够从打开位置移动到关闭位置,其中在所述打开位置中通过所述清洁组件的装载口是打开的,在所述关闭位置中所述装载口是关闭的;
和
致动器,所述致动器附接到所述门,以将所述门移动到所述打开位置中和所述关闭位置中。
2.如权利要求1所述的处理系统,其中所述门包括平板,所述平板以倾斜角度定向。
3.如权利要求2所述的处理系统,进一步包括轮缘,所述轮缘在所述下部壳体中,所述轮缘具有环形门座表面,所述环形门座表面以所述倾斜角度定向。
4.如权利要求1所述的处理系统,进一步包括门壳体,所述门壳体在所述上部壳体与所述下部壳体之间,其中所述门能够在所述门壳体内水平地移动。
5.如权利要求4所述的处理系统,包括第一排气管线和一个或多个第二排气管线,所述第一排气管线连接到所述门壳体的第一侧中,所述一个或多个第二排气管线连接到所述门壳体的第二侧中。
6.如权利要求1所述的处理系统,其中所述上部壳体和所述下部壳体各具有圆锥形渐缩侧壁。
7.如权利要求4所述的处理系统,进一步在所述门壳体上包括盖板,其中当所述门处于所述关闭位置时,所述门在所述盖板与所述门壳体之间。
8.如权利要求7所述的处理系统,其中所述装载口经由所述上部壳体、所述下部壳体、所述盖板和所述门壳体的每一个中的圆形通口设置,其中所述圆形通口在中心轴上对准。
9.如权利要求1所述的处理系统,其中处于所述关闭位置中的所述门关闭但不密封所述装载口。
10.一种晶片处理系统,包括:
处理罐;
清洁组件,所述清洁组件在所述处理罐的上端处;
头部,所述头部具有头部转子,所述头部转子经适配以保持晶片,其中所述头部能够竖直移动通过所述清洁组件中的装载口,以将晶片装载进入所述处理槽中和从所述处理罐卸载出来;和
所述清洁组件具有装载口门,所述装载口门能够从第一位置移动到第二位置,其中在所述第一位置中,所述装载口门关闭所述装载口,在所述第二位置中,所述装载口是打开的。
11.如权利要求10所述的晶片处理系统,其中所述清洁组件包括:上部壳体,所述上部壳体具有至少一个上部壳体喷射喷嘴,和下部壳体,所述下部壳体具有至少一个下部壳体喷射喷嘴,其中所述下部壳体在所述上部壳体的下方;其中所述门在所述上部壳体与所述下部壳体之间的门壳体中,排气管线连接至所述门壳体,并且净化气体管线连接至所述下部壳体中。
12.如权利要求10所述的晶片处理系统,其中所述门包括平板,所述平板以倾斜角度定向,所述晶片处理系统进一步包括门致动器,所述门致动器附接至所述门,以将所述门水平移动到所述第一位置中和所述第二位置中;和轮缘,所述轮缘在所述下部壳体中,所述轮缘具有环形门座表面,所述环形门座表面以所述倾斜角度定向。
13.一种用于处理晶片的方法,包括:
以处理液体部分地填充处理罐;
打开在所述处理罐上方的清洁组件的门;
将头部向下移动通过所述处理组件中的装载口;
使所述晶片浸没在所述处理液体中来处理所述晶片;
向上移动经处理的所述晶片离开所述处理液体并进入所述清洁组件中的第一壳体中;
将第一液体喷射到经处理的所述晶片上;
向上移动所述晶片离开所述清洁组件的所述第一壳体并进入所述清洁组件中的第二壳体;
关闭所述门;和
将第二液体喷射到经处理的所述晶片上。
14.如权利要求13所述的方法,进一步包括以下步骤:在所述第一壳体中和所述第二壳体中旋转所述晶片,并在所述处理液体上方提供净化气体至所述罐中,其中所述清洁组件连接到真空源。
15.如权利要求13所述的方法,其中所述第一液体是所述处理液体。
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WO2017218152A1 (en) | 2017-12-21 |
KR20190005256A (ko) | 2019-01-15 |
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