CN109192886A - A kind of display base plate and preparation method thereof, display panel and display device - Google Patents

A kind of display base plate and preparation method thereof, display panel and display device Download PDF

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Publication number
CN109192886A
CN109192886A CN201811031834.3A CN201811031834A CN109192886A CN 109192886 A CN109192886 A CN 109192886A CN 201811031834 A CN201811031834 A CN 201811031834A CN 109192886 A CN109192886 A CN 109192886A
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China
Prior art keywords
anode
layer
inorganic insulation
insulation layer
pixel defining
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CN201811031834.3A
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CN109192886B (en
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王国英
宋振
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention provides a kind of display base plate and preparation method thereof, display panel and display devices, are related to field of display technology.The present invention is by forming anode by patterning processes on substrate, form the inorganic insulation layer of covering anode, pixel defining layer is formed by patterning processes on inorganic insulation layer, orthographic projection of the open area of pixel defining layer on anode is located in the region where anode, and removal is located at the inorganic insulation layer on the anode in the open area of pixel defining layer.By after forming anode, form inorganic insulation layer, pixel defining layer is formed on inorganic insulation layer, using pixel defining layer as exposure mask, removal is located at the inorganic insulation layer on the anode in the open area of pixel defining layer, while removing inorganic insulation layer, so that the particulate matter generated on inorganic insulation layer in pixel defining layer forming process, as inorganic insulation layer is removed together, the particulate matter quantity on anode is reduced, to improve the yield of display base plate.

Description

A kind of display base plate and preparation method thereof, display panel and display device
Technical field
The present invention relates to field of display technology, more particularly to a kind of display base plate and preparation method thereof, display panel and Display device.
Background technique
OLED (Organic Light Emitting Diode, organic electroluminescence device), which has, actively to shine, is highlighted Degree, high contrast, ultra-thin, low-power consumption, can flexibility and operating temperature range it is wide many advantages, such as, it has also become great competitiveness With the next-generation display technology of development prospect.
After the OLED display panel that completes, it usually needs test is carried out to OLED display panel and reliability is evaluated, But during test and reliability are evaluated, it is found that a large amount of stain is had in OLED display panel to be generated, and with survey The growth of time is tried, stain has obvious widened sign.
Pass through SEM (Scanning Electron Microscope, scanning electron microscope) and FIB (Focused Ion Beam, focused ion beam) etc. test analysis learn that reason mainly completes PDL (Pixel on anode Definition Layer, pixel defining layer) after, there are greater number of particle (particulate matter), steam on anode for meeting Luminescent layer can be entered from particulate matter position, so that OLED device failure, i.e. generation stain, and with the extension of time, The steam quantity of invasion increases, and the quantity of stain can also continue to increase, and yield is caused to reduce.
Summary of the invention
The present invention provides a kind of display base plate and preparation method thereof, display panel and display device, to solve existing sun The problem of particulate matter quantity is more present on pole, and yield is caused to reduce.
To solve the above-mentioned problems, the invention discloses a kind of production methods of display base plate, comprising:
Anode is formed by patterning processes on substrate;
Inorganic insulation layer is formed, the inorganic insulation layer covers the anode;
Pixel defining layer, the open area of the pixel defining layer are formed by patterning processes on the inorganic insulation layer Orthographic projection on the anode is located in the region where the anode;
Removal is located at the inorganic insulation layer on the anode in the open area of the pixel defining layer.
Preferably, it is located on the anode in the open area of the pixel defining layer using wet-etching technology removal Inorganic insulation layer.
Preferably, the inorganic insulation layer using plasma enhancing chemical vapor deposition process is formed.
Preferably, the production method further include:
Luminescent layer and cathode are sequentially formed on the anode in the open area of the pixel defining layer.
To solve the above-mentioned problems, the invention also discloses a kind of display base plates, comprising:
Substrate;
Form anode over the substrate;
Form inorganic insulation layer on the anode;
The pixel defining layer being formed on the inorganic insulation layer;
Wherein, the orthographic projection of the open area of the pixel defining layer on the anode is located at the area where the anode In domain, and the orthographic projection of the open area of the pixel defining layer on the anode and the inorganic insulation layer are in the anode On orthographic projection do not overlap.
Preferably, the material of the inorganic insulation layer is aluminium oxide, silicon nitride or silica.
Preferably, the inorganic insulation layer with a thickness ofExtremely
Preferably, the display base plate further include:
The luminescent layer and cathode being formed on the anode in the open area of the pixel defining layer;Wherein, described Luminescent layer is close to the anode.
To solve the above-mentioned problems, the invention also discloses a kind of display panels, including above-mentioned display base plate.
To solve the above-mentioned problems, in addition the present invention discloses a kind of display device, including above-mentioned display panel.
Compared with prior art, the present invention includes the following advantages:
By forming anode by patterning processes on substrate, the inorganic insulation layer of covering anode is formed, in inorganic insulation Pixel defining layer is formed by patterning processes on layer, orthographic projection of the open area of pixel defining layer on anode is located at anode institute Region in, removal be located at pixel defining layer open area in anode on inorganic insulation layer.By forming anode Afterwards, inorganic insulation layer is formed, forms pixel defining layer on inorganic insulation layer, using pixel defining layer as exposure mask, removes position Inorganic insulation layer on the anode in the open area of pixel defining layer, while removing inorganic insulation layer, so that pixel The particulate matter generated on inorganic insulation layer in layer formation process is defined, as inorganic insulation layer is removed together, reduces sun Particulate matter quantity on extremely, to improve the yield of display base plate.
Detailed description of the invention
Fig. 1 shows a kind of flow chart of the production method of display base plate of the embodiment of the present invention;
Fig. 2 shows the structural schematic diagram after anode is formed on the substrate in the embodiment of the present invention;
Fig. 3 shows the structural schematic diagram formed after inorganic insulation layer in the embodiment of the present invention;
Fig. 4 is shown forms the structural schematic diagram after pixel defining layer on inorganic insulation layer in the embodiment of the present invention;
It is inorganic exhausted on the anode in the open area of pixel defining layer that Fig. 5 shows removal in the embodiment of the present invention Structural schematic diagram after edge layer;
Fig. 6 shows the particulate matter after forming pixel defining layer, generated on inorganic insulation layer in the embodiment of the present invention Structural schematic diagram;
Fig. 7 show in the embodiment of the present invention removal anode on inorganic insulation layer after, generated on inorganic insulation layer The structural schematic diagram that particulate matter is also removed.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real Applying mode, the present invention is described in further detail.
Embodiment one
Referring to Fig.1, a kind of flow chart of the production method of display base plate of the embodiment of the present invention is shown, specifically can wrap Include following steps:
Step 101, anode is formed by patterning processes on substrate.
In embodiments of the present invention, as shown in Fig. 2, forming anode 22 by patterning processes on substrate 21, specifically, First deposition anode film, is patterned processing to anode film and obtains anode 22 on substrate 21.
Wherein, anode 22 can be single layer structure, and material is ITO (Indium Tin Oxide, tin indium oxide) etc., sun Pole 22 can also be stack architecture, and material is ITO/Ag/ITO etc..
It should be noted that being also formed with thin film transistor (TFT) between substrate 21 and anode 22, which includes Buffer layer, active layer, gate insulation layer, grid, interlayer insulating film, source electrode, drain electrode, passivation layer and flatness layer, first in substrate 21 It is upper that using PECVD, (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor are heavy Product) method or other deposition method buffer layers, active layer is formed by patterning processes on the buffer layer, it is logical on active layer It crosses patterning processes and sequentially forms gate insulation layer and grid, then interlayer dielectric layer is formed by patterning processes, in interlayer dielectric layer It is upper to form source electrode and drain electrode by patterning processes, then, using PECVD or other deposition method deposit passivation layers, in passivation layer Upper formation flatness layer, finally, forming anode 22 by patterning processes on flatness layer.
Wherein, the material of active layer can for IGZO (Indium Gallium Zinc Oxide, indium gallium zinc oxide), ZnON (zinc nitrogen oxides), IZTO (Indium Zinc Tin Oxide, indium zinc tin oxide), a-Si (Amorphous Silicon, amorphous silicon), p-Si (Poly Silicon, polysilicon), six thiophene, polythiophene etc.;Buffer layer, gate insulation layer, layer Between the material of insulating layer and passivation layer can be silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), aluminium oxide (AlOx), hafnium oxide (HfOx), tantalum oxide (TaOx) etc.;Grid, source electrode, drain electrode material can be metal material, such as silver (Ag), copper (Cu), aluminium (Al), molybdenum (Mo), MoNb/Cu/MoNb etc., can also be with the alloy material of metal, such as aluminium neodymium alloy (AlNd), molybdenum niobium alloy (MoNb) etc. can also be the corresponding material of stack architecture that metal and transparent conductive oxide are formed, Such as ITO/Ag/ITO;The material of flatness layer can be polysiloxane series material, acrylic based material or polyimides based material etc. Material with flattening effect.
It should be noted that the patterning processes in the embodiment of the present invention generally comprise photoresist coating, exposure, development, carve The techniques such as erosion.
Step 102, inorganic insulation layer is formed, the inorganic insulation layer covers the anode.
In embodiments of the present invention, as shown in figure 3, after forming anode 22, inorganic insulation layer 23, the inorganic insulation are deposited Layer 23 covers anode 22.
Wherein, 23 using plasma of inorganic insulation layer enhancing chemical vapor deposition process is formed, inorganic insulation layer 23 Material be aluminium oxide, silicon nitride or silica, inorganic insulation layer 23 with a thickness of Extremely
Step 103, pixel defining layer is formed by patterning processes on the inorganic insulation layer, the pixel defining layer The orthographic projection of open area on the anode is located in the region where the anode.
In embodiments of the present invention, as shown in figure 4, forming pixel defining layer by patterning processes on inorganic insulation layer 23 24, the open area M of pixel defining layer is in the region that the orthographic projection on anode 22 is located at 22 place of anode.
Specifically, coating 24 material of pixel defining layer on inorganic insulation layer 23, to form pixel defining layer film, and adopt Pixel defining layer film is exposed with mask (exposure mask), is then developed, so that the pixel defining layer in the M of open area Film is removed, and obtains pixel defining layer 24.
Step 104, removal is located at the inorganic insulation layer on the anode in the open area of the pixel defining layer.
In embodiments of the present invention, as shown in figure 5, using pixel defining layer 24 as exposure mask, removal is defined positioned at pixel The inorganic insulation layer 23 on anode 22 in the open area M of layer 24.
Referring to Fig. 6, the particle after forming pixel defining layer, generated on inorganic insulation layer in the embodiment of the present invention is shown The structural schematic diagram of object, Fig. 7 are shown in the embodiment of the present invention after the inorganic insulation layer on removal anode, on inorganic insulation layer The structural schematic diagram that the particulate matter of generation is also removed.
As shown in fig. 6, during forming pixel defining layer 24 by patterning processes on inorganic insulation layer 23, inorganic Particulate matter P can be generated on insulating layer 23, as shown in fig. 7, using pixel defining layer 24 as exposure mask, removal is defined positioned at pixel While inorganic insulation layer 23 on anode 22 in the open area M of layer 24, the particulate matter P generated on inorganic insulation layer 23, It can be removed together with inorganic insulation layer 23, reduce the particulate matter quantity on anode 22;Particulate matter on anode 22 When quantity is reduced, steam is then not easily accessed luminescent layer, and the probability that stain generates also significantly reduces, to improve display base plate Yield.
Preferably, it is located on the anode 22 in the open area M of pixel defining layer 24 using wet-etching technology removal Inorganic insulation layer 23.
If using dry etch process to inorganic exhausted on the anode 22 in the open area M for being located at pixel defining layer 24 When edge layer 23 is removed, dry etch process use plasma the particulate matter P on inorganic insulation layer 23 can be bombarded to Other positions can still impact yield, and therefore, the embodiment of the present invention preferably uses wet-etching technology, will be located at picture The inorganic insulation layer 23 that element defines on the anode 22 in the open area M of layer 24 etches away, in etching by increasing in right amount Etch amount, so that the particulate matter P on inorganic insulation layer 23 is also removed.
It should be noted that over etching amount can be increased by increasing etch period, or the concentration of raising etching liquid, The etch period of the embodiment of the present invention and the concentration of etching liquid, material used by the thickness and anode 22 with inorganic insulation layer 23 Material is related.
When the thickness of inorganic insulation layer 23 is bigger, etch period is longer, and the concentration of etching liquid is higher, works as inorganic insulation layer 23 thickness is got over hour, and etch period is shorter, and the concentration of etching liquid is lower;Material used by anode 22 may be with etching liquid It reacts, when etching inorganic insulation layer 23, anode 22 can be impacted, material used by anode 22 may not also be with Etching liquid reacts, and when etching inorganic insulation layer 23, will not impact to anode 22, therefore, when etching liquid is to anode When 22 influence is bigger, etch period is shorter, and the concentration of etching liquid is lower, when influence of the etching liquid to anode 22 is smaller, carves The erosion time is longer, and the concentration of etching liquid is higher.
After step 104, further includes: sequentially formed on the anode in the open area of the pixel defining layer Luminescent layer and cathode.
In embodiments of the present invention, inorganic on the anode 22 in the open area M that removal is located at pixel defining layer 24 After insulating layer 23, it is initially formed luminescent layer on the anode 22 in the open area M of pixel defining layer 24, vapor deposition can be used or is beaten The method of print forms luminescent layer, finally forms cathode on the light-emitting layer, the material of cathode can be the metal materials such as silver, aluminium.
Increase inorganic insulation layer 23 between pixel defining layer 24 and anode 22, the leakage between anode 22 and cathode can be reduced Electricity improves the drain conditions of display base plate.
In embodiments of the present invention, by forming anode by patterning processes on substrate, the inorganic of covering anode is formed Insulating layer forms pixel defining layer by patterning processes on inorganic insulation layer, and the open area of pixel defining layer is on anode Orthographic projection be located in the region where anode, removal is located at the inorganic insulation on the anode in the open area of pixel defining layer Layer.By forming inorganic insulation layer, forming pixel defining layer on inorganic insulation layer, defined using pixel after forming anode Layer is used as exposure mask, and removal is located at the inorganic insulation layer on the anode in the open area of pixel defining layer, in removal inorganic insulation While layer, so that the particulate matter generated on inorganic insulation layer in pixel defining layer forming process, with inorganic insulation layer one It rises and is removed, the particulate matter quantity on anode is reduced, to improve the yield of display base plate.
Embodiment two
The embodiment of the invention provides a kind of display base plates, comprising: substrate 21, the anode 22 being formed on substrate 21, shape At the inorganic insulation layer 23 on anode 22, the pixel defining layer 24 that is formed on inorganic insulation layer 23.
Wherein, in the region where the open area M of pixel defining layer 24 is located at anode 22 in the orthographic projection on anode 22, And the open area M of pixel defining layer 24 on anode 22 orthographic projection and orthographic projection of the inorganic insulation layer 23 on anode 22 not It is overlapping.
That is, inorganic insulation layer 23 is not provided on anode 22 in the open area M of pixel defining layer 24, it can The inorganic insulation layer 23 being located on the anode 22 in the open area M of pixel defining layer 24 using wet-etching technology removal.
Wherein, the material of inorganic insulation layer 23 is aluminium oxide, silicon nitride or silica;Inorganic insulation layer 23 with a thickness ofExtremely
In embodiments of the present invention, display base plate further include: the anode being formed in the open area M of pixel defining layer 24 Luminescent layer and cathode on 22;Wherein, luminescent layer is close to anode 22.
In embodiments of the present invention, display base plate includes substrate, forms anode on substrate, the nothing being formed on anode Machine insulating layer, the pixel defining layer being formed on inorganic insulation layer, orthographic projection of the open area of pixel defining layer on anode In the region where anode, and orthographic projection and inorganic insulation layer of the open area of pixel defining layer on anode are in anode On orthographic projection do not overlap.By removing the inorganic insulation layer on the anode being located in the open area of pixel defining layer, going While except inorganic insulation layer, so that the particulate matter generated on inorganic insulation layer in pixel defining layer forming process, with nothing Machine insulating layer is removed together, the particulate matter quantity on anode is reduced, to improve the yield of display base plate.
Embodiment three
The embodiment of the invention provides a kind of display panel, which includes above-mentioned display base plate.
Certainly, display panel further includes pairing substrate, which can be encapsulation cover plate or color membrane substrates etc..
The description of embodiment one and embodiment two, the embodiment of the present invention pair are referred to about the specific descriptions of display base plate This is repeated no more.
The embodiment of the invention also provides a kind of display devices, and including above-mentioned display panel, which can be Top-emitting OLED display panel or bottom emitting type OLED display panel.
When display panel is top-emitting OLED display panel, above-mentioned anode 22 is reflection anode, and cathode uses transparent gold Belong to material, the light that luminescent layer issues is reflexed to cathode by reflection anode, and light is emitted from cathode;When display panel is bottom emitting Type OLED display panel, anode use transparent metal material, and the light that luminescent layer issues is emitted from anode.
In practical applications, display device can be with are as follows: mobile phone, television set, display, laptop, is led at tablet computer Any products or components having a display function such as boat instrument.
In embodiments of the present invention, display panel includes display base plate, and display base plate includes substrate, is formed on substrate Anode, the inorganic insulation layer being formed on anode, the pixel defining layer being formed on inorganic insulation layer, the opening of pixel defining layer Orthographic projection of the region on anode is located in the region where anode, and positive throwing of the open area of pixel defining layer on anode The orthographic projection of shadow and inorganic insulation layer on anode does not overlap.By removing the anode being located in the open area of pixel defining layer On inorganic insulation layer, while removing inorganic insulation layer, so that in pixel defining layer forming process on inorganic insulation layer The particulate matter of generation reduces the particulate matter quantity on anode, to improve display surface as inorganic insulation layer is removed together The yield of plate.
For the aforementioned method embodiment, for simple description, therefore, it is stated as a series of action combinations, still Those skilled in the art should understand that the present invention is not limited by the sequence of acts described, because according to the present invention, it is certain Step can be performed in other orders or simultaneously.Secondly, those skilled in the art should also know that, it is described in the specification Embodiment belong to preferred embodiment, it is related that actions and modules are not necessarily necessary for the present invention.
All the embodiments in this specification are described in a progressive manner, the highlights of each of the examples are with The difference of other embodiments, the same or similar parts between the embodiments can be referred to each other.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning Covering non-exclusive inclusion, so that the process, method, commodity or the equipment that include a series of elements not only include that A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, commodity or The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged Except there is also other identical elements in process, method, commodity or the equipment for including the element.
Above to a kind of display base plate provided by the present invention and preparation method thereof, display panel and display device, carry out It is discussed in detail, used herein a specific example illustrates the principle and implementation of the invention, above embodiments Explanation be merely used to help understand method and its core concept of the invention;At the same time, for those skilled in the art, According to the thought of the present invention, there will be changes in the specific implementation manner and application range, in conclusion in this specification Appearance should not be construed as limiting the invention.

Claims (10)

1. a kind of production method of display base plate characterized by comprising
Anode is formed by patterning processes on substrate;
Inorganic insulation layer is formed, the inorganic insulation layer covers the anode;
Pixel defining layer is formed by patterning processes on the inorganic insulation layer, the open area of the pixel defining layer is in institute It states in the region where the orthographic projection on anode is located at the anode;
Removal is located at the inorganic insulation layer on the anode in the open area of the pixel defining layer.
2. manufacturing method according to claim 1, which is characterized in that be located at the pixel using wet-etching technology removal Define the inorganic insulation layer on the anode in the open area of layer.
3. manufacturing method according to claim 1, which is characterized in that the inorganic insulation layer using plasma enhancingization Gas-phase deposition is learned to be formed.
4. manufacturing method according to claim 1, which is characterized in that further include:
Luminescent layer and cathode are sequentially formed on the anode in the open area of the pixel defining layer.
5. a kind of display base plate characterized by comprising
Substrate;
Form anode over the substrate;
Form inorganic insulation layer on the anode;
The pixel defining layer being formed on the inorganic insulation layer;
Wherein, the orthographic projection of the open area of the pixel defining layer on the anode is located at the region where the anode It is interior, and the orthographic projection of the open area of the pixel defining layer on the anode and the inorganic insulation layer are on the anode Orthographic projection do not overlap.
6. display base plate according to claim 5, which is characterized in that the material of the inorganic insulation layer is aluminium oxide, nitrogen SiClx or silica.
7. display base plate according to claim 5, which is characterized in that the inorganic insulation layer with a thickness ofExtremely
8. display base plate according to claim 5, which is characterized in that further include:
The luminescent layer and cathode being formed on the anode in the open area of the pixel defining layer;Wherein, described to shine Layer is close to the anode.
9. a kind of display panel, which is characterized in that including the display base plate as described in any one of claim 5-8.
10. a kind of display device, which is characterized in that including display panel as claimed in claim 9.
CN201811031834.3A 2018-09-05 2018-09-05 Display substrate, manufacturing method thereof, display panel and display device Active CN109192886B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020151073A1 (en) * 2019-01-22 2020-07-30 深圳市华星光电半导体显示技术有限公司 Method for fabricating oled display panel
CN111987243A (en) * 2020-08-11 2020-11-24 Tcl华星光电技术有限公司 Display panel manufacturing method and display panel
CN112420946A (en) * 2020-11-12 2021-02-26 深圳市华星光电半导体显示技术有限公司 Display panel, preparation method thereof and display device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1828839A (en) * 2005-02-07 2006-09-06 三星Sdi株式会社 Organic light emitting display (oled) and method of fabricating the same
KR100709195B1 (en) * 2005-11-22 2007-04-18 삼성에스디아이 주식회사 Organic light emitting display and fabrication method thereof
KR100709196B1 (en) * 2005-11-22 2007-04-18 삼성에스디아이 주식회사 Organic light emitting display and fabrication method thereof
CN101243553A (en) * 2005-08-23 2008-08-13 剑桥显示技术有限公司 Organic electronic device structures and fabrication methods
CN102017158A (en) * 2008-03-14 2011-04-13 剑桥显示技术有限公司 Electronic devices and methods of making them using solution processing techniques
CN102440071A (en) * 2010-07-05 2012-05-02 松下电器产业株式会社 Method for manufacturing light-emitting element, organic display panel using light-emitting element, organic light-emitting device, and organic display device
US20180011385A1 (en) * 2016-07-05 2018-01-11 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same
CN108231836A (en) * 2016-12-09 2018-06-29 乐金显示有限公司 Organic light-emitting display device and its manufacturing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1828839A (en) * 2005-02-07 2006-09-06 三星Sdi株式会社 Organic light emitting display (oled) and method of fabricating the same
CN101243553A (en) * 2005-08-23 2008-08-13 剑桥显示技术有限公司 Organic electronic device structures and fabrication methods
KR100709195B1 (en) * 2005-11-22 2007-04-18 삼성에스디아이 주식회사 Organic light emitting display and fabrication method thereof
KR100709196B1 (en) * 2005-11-22 2007-04-18 삼성에스디아이 주식회사 Organic light emitting display and fabrication method thereof
CN102017158A (en) * 2008-03-14 2011-04-13 剑桥显示技术有限公司 Electronic devices and methods of making them using solution processing techniques
CN102440071A (en) * 2010-07-05 2012-05-02 松下电器产业株式会社 Method for manufacturing light-emitting element, organic display panel using light-emitting element, organic light-emitting device, and organic display device
US20180011385A1 (en) * 2016-07-05 2018-01-11 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same
CN108231836A (en) * 2016-12-09 2018-06-29 乐金显示有限公司 Organic light-emitting display device and its manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020151073A1 (en) * 2019-01-22 2020-07-30 深圳市华星光电半导体显示技术有限公司 Method for fabricating oled display panel
CN111987243A (en) * 2020-08-11 2020-11-24 Tcl华星光电技术有限公司 Display panel manufacturing method and display panel
CN111987243B (en) * 2020-08-11 2021-11-02 Tcl华星光电技术有限公司 Display panel manufacturing method and display panel
CN112420946A (en) * 2020-11-12 2021-02-26 深圳市华星光电半导体显示技术有限公司 Display panel, preparation method thereof and display device

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