CN109192785A - A kind of the low pressure TVS device and its manufacturing method of Low dark curient - Google Patents
A kind of the low pressure TVS device and its manufacturing method of Low dark curient Download PDFInfo
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- CN109192785A CN109192785A CN201810813141.3A CN201810813141A CN109192785A CN 109192785 A CN109192785 A CN 109192785A CN 201810813141 A CN201810813141 A CN 201810813141A CN 109192785 A CN109192785 A CN 109192785A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 20
- 239000011574 phosphorus Substances 0.000 claims abstract description 20
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 238000001704 evaporation Methods 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 239000004411 aluminium Substances 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 35
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 101100074846 Caenorhabditis elegans lin-2 gene Proteins 0.000 description 3
- 101100497386 Mus musculus Cask gene Proteins 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 101100181929 Caenorhabditis elegans lin-3 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Abstract
The invention discloses a kind of low pressure TVS devices of Low dark curient, including P+ type substrate and the phosphorus area for being spread in P+ type upper surface of substrate and lower surface, phosphorus area is made of two parts, a part is the area N+ Nong Lin, a part is the area N- Dan Lin, for N- Dan Lin area's deposit and spread in the two sides in the area N+ Nong Lin, the upper and lower surfaces of the TVS device are thermally grown silicon dioxide passivation layer；The invention also discloses the manufacturing method of the low pressure TVS device of the Low dark curient, including silicon wafer twin polishing, oxidation, the photoetching of the area Dan Lin, light phosphorus diffusion, the photoetching of the area Nong Lin, the diffusion of the area Nong Lin, fairlead photoetching, evaporation of aluminum, aluminium anti-carve, aluminium alloy, back gold, back gold anti-carve.The area elder generation's photoetching Dan Lin of the present invention carries out light phosphorus diffusion, achieve the effect that reduce surface leakage, then the area photoetching Nong Lin carries out dense phosphorus diffusion, achieve the effect that improve surge capacity, breakdown region is the area Nong Lin, breakdown voltage is accurately controlled by adjusting the surface concentration and junction depth in the area Nong Lin, greatly improves the performance of low pressure TVS.
Description
Technical field
The invention belongs to semiconductor protective device fields, and in particular, to a kind of the low pressure TVS device and its system of Low dark curient
Make method.
Background technique
TVS device is a kind of clamper type over-voltage protector, it can with the response speed of ns by surge voltage clamper in spy
Fixed level makes rear end protected circuit from excessive pressure damages.The model of TVS be by breakdown voltage (or off state voltage) from as low as
What height was divided, the TVS of mesohigh generally use n type material piece make, the voltage more resistivity of high request N-type substrate more
It is high；Low pressure TVS is made of P-type material piece, due to requiring breakdown voltage sufficiently low, it is therefore desirable to which the resistivity of material piece is enough
Low, doping concentration is sufficiently high.The TVS surface density of states made of high concentration substrate is big, and there are serious surface recombinations, even if
Surface is done passivation layer and is also difficult to control, usually up to 200 μ A or more, seriously affects the performance of device.
Summary of the invention
The purpose of the present invention is to provide the low pressure TVS devices and its manufacturing method of a kind of Low dark curient, to solve conventional junction
The electric leakage of structure low pressure TVS device is big, surge capacity deficiency problem.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of low pressure TVS device of Low dark curient including P+ type substrate and is spread in P+ type upper surface of substrate and lower surface
Phosphorus area, phosphorus area are made of two parts, and a part is the area N+ Nong Lin, and a part is the area N- Dan Lin, and the area N- Dan Lin deposit and spread is in N
The two sides in the area+Nong Lin, the upper and lower surfaces of the TVS device are thermally grown silicon dioxide passivation layer；
The low pressure TVS device of the Low dark curient is made by following steps:
One, substrate material
P-type silicon single crystal piece is selected, twin polishing is carried out to P-type silicon single crystal piece；
Two, it aoxidizes
In the thermally grown silicon dioxide passivation layer of the upper and lower surfaces of P-type silicon single crystal piece；
Three, the area Dan Lin photoetching
The photoetching of the area Dan Lin is carried out in P-type silicon single crystal on piece using the area Dan Lin reticle；
Four, the area Dan Lin is spread
Pre-deposited: POCl is used3As doped source, 900-1000 DEG C of pre-deposition temperature, time 60-100min, Rs=8-
10Ω/□；
It spreads: being spread again using silicone tube, then 1000-1100 DEG C of diffusion temperature, time 1-4h, Xj=2-5 μm again；
Five, the area Nong Lin photoetching
The photoetching of the area Nong Lin is carried out in P-type silicon single crystal on piece using the area Nong Lin reticle；
Six, the area Nong Lin is spread
Pre-deposited: POCl is used3As doped source, 1050-1150 DEG C of pre-deposition temperature, time 80-120min, Rs=
0.5-1Ω/□；
It spreads: being spread again using silicone tube, then 1100-1200 DEG C of diffusion temperature, time 4-10h, Xj=10-15 μ again
m；
Seven, fairlead photoetching
Fairlead photoetching is carried out using fairlead reticle；
Eight, evaporation of aluminum
It is operated by evaporation of aluminum, is covered with one layer of aluminum membranous layer on the surface of P-type silicon single crystal piece；
Nine, aluminium anti-carves
Version progress aluminium is anti-carved using metal to anti-carve；
Ten, evaporation of aluminum alloy
In the laminating one layer of aluminium alloy film of aluminium film layer surface；
11, Ti-Ni-Ag alloy is steamed
One layer of Ti-Ni-Ag alloy film is deposited on aluminium alloy film surface；
12, Ti-Ni-Ag is anti-carved
Version is anti-carved using metal to anti-carve Ti-Ni-Ag alloy film, and the low pressure TVS device of Low dark curient is prepared.
Further, the silicon dioxide passivation layer with a thickness of 1-1.5 μm.
Further, the region in the area the N+ Nong Lin is provided with lead frame, is connected with electrode at lead frame.
A kind of manufacturing method of the low pressure TVS device of Low dark curient, includes the following steps:
One, substrate material
P-type silicon single crystal piece is selected, twin polishing is carried out to P-type silicon single crystal piece；
Two, it aoxidizes
In the thermally grown silicon dioxide passivation layer of the upper and lower surfaces of P-type silicon single crystal piece；
Three, the area Dan Lin photoetching
The photoetching of the area Dan Lin is carried out in P-type silicon single crystal on piece using the area Dan Lin reticle；
Four, the area Dan Lin is spread
Pre-deposited: POCl is used3As doped source, 900-1000 DEG C of pre-deposition temperature, time 60-100min, Rs=8-
10Ω/□；
It spreads: being spread again using silicone tube, then 1000-1100 DEG C of diffusion temperature, time 1-4h, Xj=2-5 μm again；
Five, the area Nong Lin photoetching
The photoetching of the area Nong Lin is carried out in P-type silicon single crystal on piece using the area Nong Lin reticle；
Six, the area Nong Lin is spread
Pre-deposited: POCl is used3As doped source, 1050-1150 DEG C of pre-deposition temperature, time 80-120min, Rs=
0.5-1Ω/□；
It spreads: being spread again using silicone tube, then 1100-1200 DEG C of diffusion temperature, time 4-10h, Xj=10-15 μ again
m；
Seven, fairlead photoetching
Fairlead photoetching is carried out using fairlead reticle；
Eight, evaporation of aluminum
It is operated by evaporation of aluminum, is covered with one layer of aluminum membranous layer on the surface of P-type silicon single crystal piece；
Nine, aluminium anti-carves
Version progress aluminium is anti-carved using metal to anti-carve；
Ten, evaporation of aluminum alloy
In the laminating one layer of aluminium alloy film of aluminium film layer surface；
11, Ti-Ni-Ag alloy is steamed
One layer of Ti-Ni-Ag alloy film is deposited on aluminium alloy film surface；
12, Ti-Ni-Ag is anti-carved
Version is anti-carved using metal to anti-carve Ti-Ni-Ag alloy film, and the low pressure TVS device of Low dark curient is prepared.
Further, the parameter of P-type silicon single crystal piece described in step 1 be ρ: 0.006-0.01 Ω cm, piece it is thick: 200-
250μm。
Further, 1000-1100 DEG C, t=5-10h of thermally grown oxide temperature described in step 2, silica passivation
Tox=1-1.5 μm of thickness degree.
Further, δ=1-3 μm of aluminum membranous layer thickness described in step 8.
Further, when evaporation of aluminum alloy operates in step 10,500 DEG C of aluminium alloy temperature, time 30min.
Further, δ=1-1.5 μm of the overall thickness of Ti-Ni-Ag alloy film described in step 11.
Beneficial effects of the present invention:
The area elder generation's photoetching Dan Lin of the present invention carries out light phosphorus diffusion, achievees the effect that reduce surface leakage, then the area photoetching Nong Lin
Carry out dense phosphorus diffusion, achieve the effect that improve surge capacity, breakdown region is the area Nong Lin, by adjusting the area Nong Lin surface concentration and
Junction depth can accurately control breakdown voltage；Low pressure TVS in the fabrication process more than once light of the present invention relative to traditional structure
It carves, production cost has increased slightly, but ensure that surge while reducing and leaking electricity by combining in the area Dan Lin and the area Nong Lin
Ability greatly improves the performance of low pressure TVS；It is verified by flow, low pressure TVS provided by the invention is according to corresponding voltage shelves
The testing standard of grade is leaked electricity less than 50 μ A, and as a comparison, the low pressure TVS electric leakage of traditional structure is greater than 100 μ A；Meanwhile the present invention
The low pressure TVS of offer still will not be degenerated under 10/1000 μ s waveform by device performance after the surge of 1.7 times of rated power,
The low pressure TVS of traditional structure can only be by 1.2 times of rated power under 10/1000 μ s waveform.
Detailed description of the invention
In order to facilitate the understanding of those skilled in the art, the present invention will be further described below with reference to the drawings.
Fig. 1 is a kind of structural schematic diagram of the low pressure TVS device of Low dark curient of the invention；
Fig. 2 is the structural schematic diagram of the low pressure TVS device of traditional structure in the specific embodiment of the invention.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with embodiment, it is clear that described reality
Applying example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is general
Logical technical staff all other embodiment obtained without creative efforts belongs to what the present invention protected
Range.
A kind of low pressure TVS device of Low dark curient, as shown in Figure 1, including P+ type substrate 1 and being spread in table on P+ type substrate 1
The phosphorus area in face and lower surface, phosphorus area are made of two parts, and a part is the area N+ Nong Lin 2, and a part is the area N- Dan Lin 3, and N- is light
For 3 deposit and spread of phosphorus area in the two sides in the area N+ Nong Lin 2, the upper and lower surfaces of the TVS device are thermally grown silicon dioxide passivation layer
4, silicon dioxide passivation layer 4 with a thickness of 1-1.5 μm, the region in the area N+ Nong Lin 2 is provided with lead frame, is connected at lead frame
Electrode, as shown in Figure 1, T1 and T2 are two electrodes；
The manufacturing method of the low pressure TVS device of the Low dark curient, includes the following steps:
One, substrate material
P-type silicon single crystal piece is selected, the parameter of the P-type silicon single crystal piece is ρ: 0.006-0.01 Ω cm, piece is thick: 200-
250 μm, twin polishing is carried out to P-type silicon single crystal piece；
Two, it aoxidizes
In the thermally grown silicon dioxide passivation layer 4 of the upper and lower surfaces of P-type silicon single crystal piece, thermally grown oxide temperature 1000-
1100 DEG C, t=5-10h, Tox=1-1.5 μm of 4 thickness of silicon dioxide passivation layer；
Three, the area Dan Lin photoetching
The photoetching of the area Dan Lin is carried out in P-type silicon single crystal on piece using the area Dan Lin reticle；Specific operation process is, will be to photosensitive
The photoresist of sense is spin-coated on P-type silicon single crystal on piece, covers the area Dan Lin reticle, with ultraviolet across the area Dan Lin reticle to P
Type silicon single crystal flake is irradiated；
Four, the area Dan Lin is spread
Pre-deposited: POCl is used3As doped source, 900-1000 DEG C of pre-deposition temperature, time 60-100min, Rs=8-
10Ω/□；
It spreads: being spread again using silicone tube, then 1000-1100 DEG C of diffusion temperature, time 1-4h, Xj=2-5 μm again；
Xj is junction depth；
Five, the area Nong Lin photoetching
The photoetching of the area Nong Lin is carried out in P-type silicon single crystal on piece using the area Nong Lin reticle；
Six, the area Nong Lin is spread
Pre-deposited: POCl is used3As doped source, 1050-1150 DEG C of pre-deposition temperature, time 80-120min, Rs=
0.5-1Ω/□；
It spreads: being spread again using silicone tube, then 1100-1200 DEG C of diffusion temperature, time 4-10h, Xj=10-15 μ again
m；
Seven, fairlead photoetching
Fairlead photoetching is carried out using fairlead reticle；
Eight, evaporation of aluminum
It is operated by evaporation of aluminum, is covered with one layer of aluminum membranous layer, δ=1-3 μm of aluminum membranous layer thickness on the surface of P-type silicon single crystal piece；
Nine, aluminium anti-carves
Version progress aluminium is anti-carved using metal to anti-carve；
Ten, evaporation of aluminum alloy
In the laminating one layer of aluminium alloy film of aluminium film layer surface, when evaporation of aluminum alloy operates, 500 DEG C of aluminium alloy temperature, the time
30min；
11, Ti-Ni-Ag alloy is steamed
One layer of Ti-Ni-Ag alloy film, overall thickness δ=1-1.5 μ of Ti-Ni-Ag alloy film is deposited on aluminium alloy film surface
m；
12, Ti-Ni-Ag is anti-carved
Version is anti-carved using metal to anti-carve Ti-Ni-Ag alloy film, and the low pressure TVS device of Low dark curient is prepared；
Technical principle of the invention is as follows: the low pressure TVS of traditional structure only carries out a phosphorus diffusion (such as in P type substrate
Shown in Fig. 2), experimental results demonstrate phosphorus pre-expansion excessive concentration will cause electric leakage and cause component failure greatly, and this is mainly due to phosphorus areas
High surface concentration increases the surface state of silicon, to increase surface recombination, causes surface leakage；The concentration for reducing phosphorus pre-expansion can
Electric leakage is obviously reduced, but low concentration will cause surge capacity and be decreased obviously, and TVS is used as protection device surge energy in the application
Power is critically important parameter, the absolutely not market the insufficient TVS of surge capacity；The area elder generation's photoetching Dan Lin of the present invention carries out light phosphorus expansion
It dissipates, achievees the effect that reduce surface leakage, then the area photoetching Nong Lin carries out dense phosphorus diffusion, achieve the effect that improve surge capacity,
Breakdown region is the area Nong Lin, can accurately control breakdown voltage by adjusting the surface concentration and junction depth in the area Nong Lin；The present invention is opposite
In the low pressure TVS of traditional structure, more than once photoetching, production cost are had increased slightly in the fabrication process, but by by the area Dan Lin
Combining with the area Nong Lin ensure that surge capacity while reducing electric leakage, greatly improve the performance of low pressure TVS；Through overcurrent
Piece verifying, low pressure TVS provided by the invention leak electricity according to the testing standard of corresponding voltage shelf grade less than 50 μ A, as a comparison, pass
The low pressure TVS electric leakage for structure of uniting is greater than 100 μ A；Meanwhile low pressure TVS provided by the invention passes through 1.7 under 10/1000 μ s waveform
Device performance still will not degenerate after the surge of times rated power, and the low pressure TVS of traditional structure can only under 10/1000 μ s waveform
Pass through 1.2 times of rated power；To sum up, low pressure TVS provided by the invention efficiently solves biography by the improvement in structure
Structure low pressure TVS electric leakage of uniting is big, surge capacity deficiency problem.
Present invention disclosed above preferred embodiment is only intended to help to illustrate the present invention.There is no detailed for preferred embodiment
All details are described, are not limited the invention to the specific embodiments described.Obviously, according to the content of this specification,
It can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is in order to better explain the present invention
Principle and practical application, so that skilled artisan be enable to better understand and utilize the present invention.The present invention is only
It is limited by claims and its full scope and equivalent.
Claims (9)
1. a kind of low pressure TVS device of Low dark curient, which is characterized in that including P+ type substrate (1) and be spread on P+ type substrate (1)
The phosphorus area on surface and lower surface, phosphorus area are made of two parts, and a part is the area N+ Nong Lin (2), and a part is the area N- Dan Lin
(3), for the area N- Dan Lin (3) deposit and spread in the two sides in the area N+ Nong Lin (2), the upper and lower surfaces of the TVS device are thermally grown two
Silicon oxide passivation layer (4)；
The low pressure TVS device of the Low dark curient is made by following steps:
One, substrate material
P-type silicon single crystal piece is selected, twin polishing is carried out to P-type silicon single crystal piece；
Two, it aoxidizes
In the thermally grown silicon dioxide passivation layer (4) of the upper and lower surfaces of P-type silicon single crystal piece；
Three, the area Dan Lin photoetching
The photoetching of the area Dan Lin is carried out in P-type silicon single crystal on piece using the area Dan Lin reticle；
Four, the area Dan Lin is spread
Pre-deposited: POCl is used3As doped source, 900-1000 DEG C of pre-deposition temperature, time 60-100mi n, Rs=8-10 Ω/
□；
It spreads: being spread again using silicone tube, then 1000-1100 DEG C of diffusion temperature, time 1-4h, Xj=2-5 μm again；
Five, the area Nong Lin photoetching
The photoetching of the area Nong Lin is carried out in P-type silicon single crystal on piece using the area Nong Lin reticle；
Six, the area Nong Lin is spread
Pre-deposited: POCl is used3As doped source, 1050-1150 DEG C of pre-deposition temperature, time 80-120min, Rs=0.5-1
Ω/□；
It spreads: being spread again using silicone tube, then 1100-1200 DEG C of diffusion temperature, time 4-10h, Xj=10-15 μm again；
Seven, fairlead photoetching
Fairlead photoetching is carried out using fairlead reticle；
Eight, evaporation of aluminum
It is operated by evaporation of aluminum, is covered with one layer of aluminum membranous layer on the surface of P-type silicon single crystal piece；
Nine, aluminium anti-carves
Version progress aluminium is anti-carved using metal to anti-carve；
Ten, evaporation of aluminum alloy
In the laminating one layer of aluminium alloy film of aluminium film layer surface；
11, Ti-Ni-Ag alloy is steamed
One layer of Ti-Ni-Ag alloy film is deposited on aluminium alloy film surface；
12, Ti-Ni-Ag is anti-carved
Version is anti-carved using metal to anti-carve Ti-Ni-Ag alloy film, and the low pressure TVS device of Low dark curient is prepared.
2. a kind of low pressure TVS device of Low dark curient according to claim 1, which is characterized in that the silica passivation
Layer (4) with a thickness of 1-1.5 μm.
3. a kind of low pressure TVS device of Low dark curient according to claim 1, which is characterized in that the area the N+ Nong Lin (2)
Region is provided with lead frame, is connected with electrode at lead frame.
4. a kind of manufacturing method of the low pressure TVS device of Low dark curient according to claim 1, which is characterized in that including such as
Lower step:
One, substrate material
P-type silicon single crystal piece is selected, twin polishing is carried out to P-type silicon single crystal piece；
Two, it aoxidizes
In the thermally grown silicon dioxide passivation layer (4) of the upper and lower surfaces of P-type silicon single crystal piece；
Three, the area Dan Lin photoetching
The photoetching of the area Dan Lin is carried out in P-type silicon single crystal on piece using the area Dan Lin reticle；
Four, the area Dan Lin is spread
Pre-deposited: POCl is used3As doped source, 900-1000 DEG C of pre-deposition temperature, time 60-100min, Rs=8-10 Ω/
□；
It spreads: being spread again using silicone tube, then 1000-1100 DEG C of diffusion temperature, time 1-4h, Xj=2-5 μm again；
Five, the area Nong Lin photoetching
The photoetching of the area Nong Lin is carried out in P-type silicon single crystal on piece using the area Nong Lin reticle；
Six, the area Nong Lin is spread
Pre-deposited: POCl is used3As doped source, 1050-1150 DEG C of pre-deposition temperature, time 80-120min, Rs=0.5-1
Ω/□；
It spreads: being spread again using silicone tube, then 1100-1200 DEG C of diffusion temperature, time 4-10h, Xj=10-15 μm again；
Seven, fairlead photoetching
Fairlead photoetching is carried out using fairlead reticle；
Eight, evaporation of aluminum
It is operated by evaporation of aluminum, is covered with one layer of aluminum membranous layer on the surface of P-type silicon single crystal piece；
Nine, aluminium anti-carves
Version progress aluminium is anti-carved using metal to anti-carve；
Ten, evaporation of aluminum alloy
In the laminating one layer of aluminium alloy film of aluminium film layer surface；
11, Ti-Ni-Ag alloy is steamed
One layer of Ti-Ni-Ag alloy film is deposited on aluminium alloy film surface；
12, Ti-Ni-Ag is anti-carved
Version is anti-carved using metal to anti-carve Ti-Ni-Ag alloy film, and the low pressure TVS device of Low dark curient is prepared.
5. a kind of manufacturing method of the low pressure TVS device of Low dark curient according to claim 4, which is characterized in that step 1
Described in P-type silicon single crystal piece parameter be ρ: 0.006-0.01 Ω cm, piece it is thick: 200-250 μm.
6. a kind of manufacturing method of the low pressure TVS device of Low dark curient according to claim 4, which is characterized in that step 2
Described in 1000-1100 DEG C, t=5-10h of thermally grown oxide temperature, Tox=1-1.5 μm of thickness of silicon dioxide passivation layer (4).
7. a kind of manufacturing method of the low pressure TVS device of Low dark curient according to claim 4, which is characterized in that step 8
Described in δ=1-3 μm of aluminum membranous layer thickness.
8. a kind of manufacturing method of the low pressure TVS device of Low dark curient according to claim 4, which is characterized in that step 10
When middle evaporation of aluminum alloy operates, 500 DEG C of aluminium alloy temperature, time 30min.
9. a kind of manufacturing method of the low pressure TVS device of Low dark curient according to claim 4, which is characterized in that step 10
δ=1-1.5 μm of the overall thickness of Ti-Ni-Ag alloy film described in one.
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| CN116169181A (en) * | 2022-09-30 | 2023-05-26 | 富芯微电子有限公司 | Low-leakage low-voltage TVS device and manufacturing method thereof |
| CN117174760A (en) * | 2023-11-02 | 2023-12-05 | 江西信芯半导体有限公司 | TVS chip with field ring structure and manufacturing method thereof |
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| CN117174760A (en) * | 2023-11-02 | 2023-12-05 | 江西信芯半导体有限公司 | TVS chip with field ring structure and manufacturing method thereof |
| CN117174760B (en) * | 2023-11-02 | 2024-04-05 | 江西信芯半导体有限公司 | TVS chip with field ring structure and manufacturing method thereof |
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Application publication date: 20190111 |