CN109166469A - Display panel and production method, display device - Google Patents
Display panel and production method, display device Download PDFInfo
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- CN109166469A CN109166469A CN201811072823.XA CN201811072823A CN109166469A CN 109166469 A CN109166469 A CN 109166469A CN 201811072823 A CN201811072823 A CN 201811072823A CN 109166469 A CN109166469 A CN 109166469A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q20/00—Payment architectures, schemes or protocols
- G06Q20/38—Payment protocols; Details thereof
- G06Q20/40—Authorisation, e.g. identification of payer or payee, verification of customer or shop credentials; Review and approval of payers, e.g. check credit lines or negative lists
- G06Q20/401—Transaction verification
- G06Q20/4014—Identity check for transactions
- G06Q20/40145—Biometric identity checks
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/14—Vascular patterns
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Abstract
The invention discloses display panel and production methods, display device.The display panel includes: substrate, and the substrate has the display area not overlapped and identification region；The display area of the substrate is arranged in display device, the display device, and the display device includes first micro- light emitting diode；And the identification region of the substrate is arranged in senser element, the senser element, the senser element includes second micro- light emitting diode, and second micro- light emitting diode is the light source for referring to venous information for identification.The display panel at least one of has the following advantages that as a result: the display panel is integrated with the light source and display device for referring to venous information for identification, and for the display panel of integration, structure is simple；The display panel, which has, refers to vena recognition function, security level with higher；The display panel brightness is high, resolution is high, the service life is long, low in energy consumption, at low cost.
Description
Technical field
The present invention relates to field of display technology, and in particular, to display panel and production method, display device.
Background technique
Fingerprint identification technology is different on pattern, breakpoint and crosspoint using everyone fingerprint, and uniqueness is presented
With the feature of stability, the certification of identity is realized.Face recognition technology identifies face, benefit by the computer technology that analysis is compared
The biological characteristic of employment itself realizes the certification of identity.Currently, display device (for example, mobile phone, tablet computer etc.) is frequently with upper
State two kinds of identification technologies, paid, authentication, safety encryption etc. operation, above-mentioned identification technology is convenient and efficient, to display dress
It sets and brings better experience.
However, current display panel and production method, display device still have much room for improvement.
Summary of the invention
The present invention be based on inventor couple on the fact that and problem discovery and understanding make:
Currently, display device paid, the operation such as authentication when, there is a problem of that security level is lower.Invention
People's discovery, there are more defects for the fingerprint identification technology and face recognition technology used this is mainly due to current display device
It is caused.Specifically, being directed to fingerprint identification technology, fingerprint is easy to be stolen, it is only necessary to which simple fingerprint duplicates gloves
It cracks, and fingerprint is located at the surface of finger, belongs to main touching sundries official, easily generate abrasion, to influence authentication effect
Fruit.For face recognition technology, face has similitude and mutability as biological characteristic, and features described above will affect face
The accuracy of identification technology, in addition, the factors such as illumination condition, face overcover, age, it also can be to the accurate of face recognition technology
Property adversely affects.
It is well-known to those skilled in the art to be, refer to that vein identification technology is using blood stream through the subcutaneous superficial vein of finger
When the vascular distribution pattern that is formed as biological characteristic, carry out identity authentication method.Refer to that vein identification technology passes through blood stream
It is dynamic to constitute dynamic image, it is a kind of vivo identification technology, relies primarily on Infrared irradiation finger and obtain blood vessel lines, is by blood
A kind of dynamic living body password formed of liquid stream, this feature will disappear after being detached from human body, therefore be difficult to be stolen.Finger vena tool
There is the feature of uniqueness and stability, i.e. everyone finger venous image is different from, the vein of same person's difference finger
Image is not also identical, and the vein shape of normal adults is no longer changed.When near infrared ray irradiates finger, flow through quiet
Hemoglobin in the red blood cell of arteries and veins has absorption near infrared ray of the wavelength near 700-1000nm, then by only
The camera of sense infrared ray takes pictures to the finger Jing Guo infrared radiation, can collect the blood-vessels figure of finger interior,
Refer to hand vein recognition to realize.
Refer to that vein identification technology relative to fingerprint identification technology, face recognition technology, has natural antifalsification and living body,
Security level with higher.Currently, referring to that vein identification technology is widely used in the systems such as gate inhibition, insurance, due to its volume
It is larger, it can not be grafted directly in the display devices such as mobile phone, tablet computer.Refer to that hand vein recognition fills although having apply in the prior art
The mobile terminal set, however inventors have found that above-mentioned mobile terminal in other words refers to vein using the lighting module of external hanging type
The lighting module of identification device is seperated design with mobile terminal, and one side lighting module is easy to be lost, on the other hand above-mentioned movement
Terminal structure is more complex, and when identification is unfavorable for operating.
The present invention is directed to alleviate or solve the problems, such as at least one in above-mentioned refer at least to some extent.
In one aspect of the invention, the invention proposes a kind of display panels.The display panel includes: substrate, described
Substrate has the display area not overlapped and identification region；The substrate is arranged in display device, the display device
Display area, the display device include first micro- light emitting diode；And senser element, the senser element are arranged described
The identification region of substrate, the senser element include second micro- light emitting diode, and second micro- light emitting diode is for knowing
Do not refer to the light source of venous information.The display panel at least one of has the following advantages that as a result: the display panel, which is integrated with, to be used for
Identification refers to the light source and display device of venous information, and for the display panel of integration, structure is simple；The display panel, which has, to be referred to
Vena recognition function, security level with higher；The display panel brightness is high, resolution is high, the service life is long, low in energy consumption, cost
It is low.
According to an embodiment of the invention, first micro- light emitting diode includes the micro- light emitting diode of feux rouges, the micro- hair of green light
Optical diode and the micro- light emitting diode of blue light.Thus, it is possible to three kinds of pixel lights of RGB be formed, so that multiple color is presented.
According to an embodiment of the invention, second micro- light emitting diode is the micro- light emitting diode of infrared light.As a result, in benefit
When being identified with the display panel, the light opponent that can use the micro- light emitting diode sending of infrared light, which refers to, to be irradiated, and is obtained
The blood-vessels figure of finger interior, realization refer to hand vein recognition.
According to an embodiment of the invention, first micro- light emitting diode and second micro- light emitting diode difference are only
It on the spot include first electrode, semiconductor structure and the second electrode set gradually, wherein the semiconductor structure includes successively
The first doping type semiconductor layer, luminescent layer and the second doping type semiconductor layer being arranged, first doping type half
Conductor layer is formed by one of p-type semiconductor material and N-type semiconductor material, the second doping type semiconductor
Layer is formed by the another kind in p-type semiconductor material and N-type semiconductor material, and the luminescent layer includes multiple quantum wells.
According to an embodiment of the invention, the first electrode is made of nontransparent conductive material, the second electrode is by saturating
Bright conductive material is constituted.Thus, it is possible to reflect the light that micro- light emitting diode issues using first electrode, so that light is from display surface
The side of plate is projected, and is improved the utilization rate of light, is improved the brightness of display panel.
According to an embodiment of the invention, the display panel further comprises: first film transistor, the first film are brilliant
The drain electrode of body pipe is electrically connected with the first electrode of described first micro- light emitting diode；And second thin film transistor (TFT), described second
The drain electrode of thin film transistor (TFT) is electrically connected with the first electrode of described second micro- light emitting diode.First micro- light emitting diode as a result,
It is controlled respectively by corresponding thin film transistor (TFT) with second micro- light emitting diode, so that display and sensing can carry out simultaneously.
According to an embodiment of the invention, the first film transistor and second thin film transistor (TFT) are separately
Including bottom gate thin film transistor and top gate type thin film transistor.Thus, it is possible to utilize top gate type thin film transistor and bottom gate
Type film crystal realizes the control to micro- light emitting diode, so that the display panel has wider application range.
In another aspect of this invention, the invention proposes a kind of display devices.According to an embodiment of the invention, the display
Device includes mentioned-above display panel, as a result, the display device have mentioned-above display panel whole features with
And advantage, details are not described herein.Generally speaking, which, which has, refers to vena recognition function, security level with higher,
And the display device has many advantages, such as that brightness is high, resolution is high, the service life is long, low in energy consumption, at low cost.
In another aspect of this invention, the invention proposes a kind of methods for making display panel.Reality according to the present invention
Example is applied, this method comprises: providing substrate, the substrate has the display area not overlapped and identification region；In the base
The display area of plate forms display device, and the display device includes first micro- light emitting diode；And the knowledge in the substrate
Other region forms senser element, and the senser element includes second micro- light emitting diode, and second micro- light emitting diode is to use
Refer to the light source of venous information in identification.As a result, using simple method can be obtained with integral structure, security level compared with
High, the advantages that brightness is high, resolution is high, the service life is long, low in energy consumption, at low cost display panel.
According to an embodiment of the invention, first micro- light emitting diode and second micro- light emitting diode difference are only
It on the spot include first electrode, semiconductor structure and the second electrode set gradually, the semiconductor structure is turned by film
Print method is arranged on the substrate.First micro- light emitting diode and second micro- hair can be formed using simple method as a result,
Optical diode.
According to an embodiment of the invention, first micro- light emitting diode includes the micro- light emitting diode of feux rouges, the micro- hair of green light
Optical diode and the micro- light emitting diode of blue light, second micro- light emitting diode are the micro- light emitting diode of infrared light, wherein hair
The semiconductor structure of the identical micro- light emitting diode of light color, which synchronizes, to be transferred on the substrate.Thus, it is possible to effectively will be partly
Conductor structure is transferred on substrate.
According to an embodiment of the invention, forming first micro- light emitting diode and second micro- light emitting diode
Before, further comprise: forming first film transistor, the first film transistor and institute in the display area of the substrate
State first micro- light emitting diode electrical connection；And identification region the second thin film transistor (TFT) of formation in the substrate, described second
Thin film transistor (TFT) is electrically connected with described second micro- light emitting diode.First micro- light emitting diode and second micro- light-emitting diodes as a result,
Pipe is controlled by corresponding thin film transistor (TFT) respectively, so that display and sensing can carry out simultaneously.
According to an embodiment of the invention, this method comprises: sequentially forming active layer, gate insulation layer, grid on the substrate
Pole, interlayer dielectric layer, source electrode and drain electrode, to be respectively formed the first film crystalline substance in the display area of the substrate and identification region
Body pipe and the second thin film transistor (TFT), wherein the source electrode and the drain electrode pass through the first via hole through the interlayer dielectric layer
It is connect with the active layer；Planarization layer is formed in the source electrode and the side far from the interlayer dielectric layer that drains, and
The second via hole for running through the planarization layer is formed in region corresponding with the drain electrode；In the planarization layer far from the layer
Between the side of dielectric layer deposit nontransparent conductive material, be based on the nontransparent conductive material, pass through patterning processes and form first
Electrode, the first electrode pass through second via hole and drain electrode connection, wherein the of first micro- light emitting diode
One electrode is connect with the drain electrode of the first film transistor, the first electrode and described second of second micro- light emitting diode
The drain electrode of thin film transistor (TFT) connects；Pixel defining layer is formed far from the side of the planarization layer in the first electrode, it is described
Pixel defining layer limits light emitting region；In the light emitting region by film transfer method be respectively formed described first it is micro- shine
The semiconductor structure of the semiconductor structure of diode and second micro- light emitting diode；In the pixel defining layer far from institute
The side for stating first electrode forms passivation layer, and is formed in region corresponding with the semiconductor structure through the passivation layer
4th via hole；And transparent conductive material is deposited far from the side of the pixel defining layer in the passivation layer, based on described
Bright conductive material forms second electrode by patterning processes, and the second electrode passes through the 4th via hole and the semiconductor
Structure connection, to form described first micro- light emitting diode and second micro- light emitting diode.Thus, it is possible to obtain by
Integrated display panel that top gate type thin film transistor controls, with the other and higher display quality of higher security level.
According to an embodiment of the invention, this method comprises: sequentially forming grid, gate insulation layer, active on the substrate
Layer, source electrode and drain electrode, to be respectively formed first film transistor and second in the display area of the substrate and identification region
Thin film transistor (TFT)；The source electrode and it is described drain far from the gate insulation layer side formed planarization layer, and with it is described
The corresponding region formation that drains runs through the second via hole of the planarization layer；In the planarization layer far from the gate insulation layer
Side deposits nontransparent conductive material, is based on the nontransparent conductive material, forms first electrode by patterning processes, and described the
One electrode is connected by second via hole and the drain electrode, wherein the first electrode of first micro- light emitting diode and institute
State the drain electrode connection of first film transistor, the first electrode of second micro- light emitting diode and second thin film transistor (TFT)
Drain electrode connection；Pixel defining layer, the pixel defining layer are formed far from the side of the planarization layer in the first electrode
Limit light emitting region；The half of described first micro- light emitting diode is respectively formed by film transfer method in the light emitting region
The semiconductor structure of conductor structure and second micro- light emitting diode；In the pixel defining layer far from the first electrode
Side formed passivation layer, and region corresponding with the semiconductor structure formed run through the passivation layer the 4th via hole；
And transparent conductive material is deposited far from the side of the pixel defining layer in the passivation layer, it is based on the electrically conducting transparent material
Material forms second electrode by patterning processes, and the second electrode is connect by the 4th via hole with the semiconductor structure,
To form described first micro- light emitting diode and second micro- light emitting diode.Thus, it is possible to obtain thin by bottom gate type
Integrated display panel that film transistor controls, with the other and higher display quality of higher security level.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 shows the structural schematic diagram of display panel according to an embodiment of the invention；
Fig. 2 shows the structural schematic diagram of display panel in accordance with another embodiment of the present invention；
Fig. 3 shows the structural schematic diagram of display panel in accordance with another embodiment of the present invention；
Fig. 4 shows the structural schematic diagram of display panel in accordance with another embodiment of the present invention；And
Fig. 5 shows the flow diagram of production display panel method according to an embodiment of the invention.
Description of symbols:
100: substrate；110: display area；120: identification region；200: the first micro- light emitting diodes；300: the second micro- hairs
Optical diode；400: first film transistor；500: the second thin film transistor (TFT)s；600: planarization layer；700: pixel defining layer；
800: passivation layer；10: first electrode；20: semiconductor structure；21: the first doping type semiconductor layers；22: luminescent layer；23: the
Two doping type semiconductor layers；30: second electrode；40: active layer；50: gate insulation layer；60: grid；70: interlayer dielectric layer；
80: source electrode；90: drain electrode.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In one aspect of the invention, the invention proposes a kind of display panels.According to an embodiment of the invention, with reference to figure
1, which includes: substrate 100, display device and senser element.Wherein, substrate 100 has the display not overlapped
Region 110 and identification region 120, display device are arranged in the display area 110 of substrate 100, and senser element is arranged in base
In the identification region 120 of plate 100, display device includes first micro- light emitting diode 200, and senser element includes second micro- luminous two
Pole pipe 300, second micro- light emitting diode 300 are the light source for referring to venous information for identification.The display panel has following as a result,
At least one of advantage: the display panel is integrated with the light source and display device for referring to venous information for identification, for integration
Display panel, structure is simple；The display panel, which has, refers to vena recognition function, security level with higher；The display surface
Plate brightness is high, resolution is high, the service life is long, low in energy consumption, at low cost.
According to an embodiment of the invention, being based on micro- led display technology (Micro LED), micro- light-emitting diodes are utilized
The characteristics of pipe both can be used as light source, can also be used as pixel light, is integrated in display for the light source for referring to venous information for identification
In panel, so that the display panel is integrated, has and refer to vena recognition function, thus security level with higher,
And the display panel is made to have many advantages, such as that brightness is high, resolution is high, the service life is long, low in energy consumption, at low cost simultaneously.
Below according to specific embodiments of the present invention, each structure of the display panel is described in detail:
It will be appreciated to those of skill in the art that micro- led display technology refers to conventional light emitting diodes battle array
Addressing flood tide is transferred on circuit substrate after columnization, miniatureization, forms extra small spacing light emitting diode.Specifically, by grade
Other light-emitting diodes length of tube is further miniature to arrive micron order, to reach the technology of very-high solution, super-resolution rate.According to this hair
Bright embodiment refers to venous information light source by will constitute display device first micro- light emitting diode 200 and for identification
Second micro- light emitting diode 300 is integrated on the substrate 100, and the luminescent color by controlling above-mentioned micro- light emitting diode, realizes
The display of display device and to refer to vein irradiation so that the display panel is integrated, and with higher
Security level and higher display quality.
According to an embodiment of the invention, first micro- light emitting diode 200 is micro- luminous including the micro- light emitting diode of feux rouges, green light
Diode and the micro- light emitting diode of blue light.Thus, it is possible to three kinds of pixel lights of RGB be formed, so that multiple color is presented.Root
According to the embodiment of the present invention, second micro- light emitting diode 300 is the micro- light emitting diode of infrared light.Utilizing the display surface as a result,
When plate is identified, the light opponent that can use the micro- light emitting diode sending of infrared light, which refers to, to be irradiated, and obtains finger interior
Blood-vessels figure, realization refer to hand vein recognition.
According to an embodiment of the invention, being recycled only after being referred to using the illumination shooter that the micro- light emitting diode of infrared light issues
The camera of induction infrared light takes pictures to the finger Jing Guo infrared radiation, acquires the blood-vessels figure of interior of mobile phone, so as to
Realization refers to hand vein recognition.Specific location about the camera for only incuding infrared light is not particularly limited, as long as being able to achieve to finger
The acquisition of internal blood vessel train of thought, those skilled in the art can be designed as the case may be.
According to an embodiment of the invention, first micro- light emitting diode 200 and second micro- light emitting diode 300 divide with reference to Fig. 2
It does not independently include first electrode 10, semiconductor structure 20 and the second electrode 30 set gradually.Wherein, semiconductor structure 20
Including the first doping type semiconductor layer 21, luminescent layer 22 and the second doping type semiconductor layer 23 set gradually, first
Doping type semiconductor layer 21 is formed by one of p-type semiconductor material and N-type semiconductor material, the second doping class
Type semiconductor layer 23 is formed by the another kind in p-type semiconductor material and N-type semiconductor material, and luminescent layer 22 includes more
Quantum Well.
It will be appreciated to those of skill in the art that the wavelength of red light emitting diodes is generally 650~700nm, green
The wavelength of light emitting diode is generally 555~570nm, and the wavelength of blue LED is generally 460~470nm, infrared hair
The wavelength of optical diode is generally 850nm, 870nm, 880nm, 940nm, 980nm, the luminescent color of light emitting diode and shines
Wavelength it is related, luminous wavelength depends on semiconductor material used in light emitting diode.According to an embodiment of the invention, feux rouges
The material of micro- LED semiconductor structure can be GaAs, and the material of the micro- LED semiconductor structure of green light can be with
Material for gallium phosphide, the micro- LED semiconductor structure of blue light can be gallium nitride, and the micro- light emitting diode of infrared light is partly led
The material of body structure can be GaAs or arsenic calorize gallium.
According to an embodiment of the invention, first electrode 10 can be and be made of nontransparent conductive material, second electrode 30
It can be being made of transparent conductive material.Thus, it is possible to the light that micro- light emitting diode issues is reflected using first electrode, so that
Light is projected from the side of display panel, is improved the utilization rate of light, is improved the brightness of display panel.About first electrode and
The specific material of two electrodes is not particularly limited, as long as meeting above-mentioned condition, those skilled in the art can be according to specific
Situation is designed.For example, according to an embodiment of the invention, first electrode 10 can be and be made of Ni/Au, Ti/Au, Ni/Cu
, second electrode 30 can be to be made of tin indium oxide (ITO), indium-zinc oxide (IZO).
According to an embodiment of the invention, the display panel can also include: first film transistor with reference to Fig. 3 and Fig. 4
400 and second thin film transistor (TFT) 500, wherein first film transistor 400 is arranged in the display area of substrate 100, and with first
The electrical connection of micro- light emitting diode, the second thin film transistor (TFT) 500 are arranged in the identification region of substrate 100, and micro- shine two with second
Pole pipe electrical connection.First micro- light emitting diode and second micro- light emitting diode are controlled by corresponding thin film transistor (TFT) respectively as a result,
So that display and sensing can carry out simultaneously.
According to an embodiment of the invention, first film transistor 400 and the second thin film transistor (TFT) 500 can be equal with reference to Fig. 3
For top gate type thin film transistor, specifically, include set gradually active layer 40 on substrate 100, gate insulation layer 50, grid 60,
Interlayer dielectric layer 70, source electrode 80 and drain electrode 90, wherein source electrode 80 and drain electrode 90 same layers setting, and by running through interlayer dielectric
First via hole A of layer 70 is connect with active layer 40.Other embodiments according to the present invention, with reference to Fig. 4, first film transistor
400 and second thin film transistor (TFT) 500 can be bottom gate thin film transistor, specifically, include set gradually on the substrate 100
Grid 60, gate insulation layer 50, active layer 40, source electrode 80 and drain electrode 90, source electrode 80 and drain electrode 90 same layers setting.As a result, may be used
To realize the control to micro- light emitting diode using top gate type thin film transistor and bottom gate thin film crystal, so that the display panel
With wider application range.
According to an embodiment of the invention, the first electrode 10A of first micro- light emitting diode and first film transistor 400
Drain 90A connection, and the first electrode 10B of second micro- light emitting diode is connect with the drain electrode 90B of the second thin film transistor (TFT) 500.By
This, may be implemented first micro- light emitting diode and first film transistor be electrically connected and second micro- light emitting diode and
The electrical connection of two thin film transistor (TFT)s.
According to an embodiment of the invention, with reference to Fig. 3 and Fig. 4, the side setting of source electrode 80 and drain electrode 90 far from substrate 100
There is a planarization layer 600,90 corresponding regions of drain electrode are provided with the second via hole B, first micro- light emitting diode in planarization layer 600
The micro- light emitting diode of first electrode 10A and second first electrode 10B by the second via hole B, respectively with the first film crystalline substance
Body pipe 400 drain electrode 90A, the second thin film transistor (TFT) 500 drain electrode 90B connection, first electrode 10 far from planarization layer 600 one
Side is provided with pixel defining layer 700, and pixel defining layer 700 limits light emitting region C, is respectively arranged in the C of light emitting region and partly leads
Body structure 20A and 20B, semiconductor structure 20A are connect with first electrode 10A, and semiconductor structure 20B is connect with first electrode 10B,
Pixel defining layer 700 is provided with passivation layer 800 far from the side of first electrode 10, right with semiconductor structure 20 in passivation layer 800
The region answered is provided with the 4th via hole D, second electrode 30A and 30B by the 4th via hole D, respectively with semiconductor structure 20A and
20B connection.Thus, it is possible to the electrical connection of micro- light emitting diode with corresponding thin film transistor (TFT) be realized, to realize thin film transistor (TFT)
Control to micro- light emitting diode, so that display and sensing can carry out simultaneously.
In another aspect of this invention, the invention proposes a kind of display devices.According to an embodiment of the invention, the display
Device includes previously described display panel, as a result, the display device have previously described display panel whole features with
And advantage, details are not described herein.Generally speaking, which, which has, refers to vena recognition function, security level with higher,
And the display device has many advantages, such as that brightness is high, resolution is high, the service life is long, low in energy consumption, at low cost.
In another aspect of this invention, the invention proposes a kind of methods for making display panel.Reality according to the present invention
Example is applied, the display panel of this method production can be previously described display panel, and the display panel of this method production can as a result,
And have the advantages that feature identical with previously described display panel and, details are not described herein.
According to an embodiment of the invention, with reference to Fig. 5, this method comprises:
S100: substrate is provided
According to an embodiment of the invention, in this step, providing substrate.According to an embodiment of the invention, the substrate has
Display device and biography is arranged as a result, convenient for subsequent step in the display area not overlapped and identification region in corresponding region
Inductor component.
S200: display device is formed in the display area of substrate
According to an embodiment of the invention, in this step, forming display device in the display area of substrate.According to the present invention
Embodiment, display device includes first micro- light emitting diode, and first micro- light emitting diode includes the micro- light emitting diode of feux rouges, green
The micro- light emitting diode of light and the micro- light emitting diode of blue light.Thus, it is possible to three kinds of pixel lights of RGB are formed, it is a variety of to present
Color.About the composition of first micro- light emitting diode, before detailed description has been carried out, details are not described herein.For example, according to
The embodiment of the present invention, first micro- light emitting diode include the first electrode set gradually, semiconductor structure and second electrode,
Wherein, semiconductor structure can be through Metalorganic Chemical Vapor Deposition formation, and be existed by the setting of film transfer method
On substrate.First micro- light emitting diode can be formed using simple method as a result,.
The substrate of embodiment according to the present invention is known although increasing in non-display area (identification region) for vein
Other light source, but device architecture of the light source for identification with viewing area for micro- light emitting diode of display is identical, is also micro-
Light emitting diode construction, therefore can synchronize and to form micro- light emitting diode (first micro- light emitting diode) for display and be used for
The sensor light source (second micro- light emitting diode) of identification.Thus, it is possible in the function of increasing the display panel, guarantee that identification passes
Under the premise of the sensing sensitivity of sensor, simplify production technology.
According to an embodiment of the invention, the semiconductor structure of the identical micro- light emitting diode of luminescent color can synchronize transfer
Onto substrate.Thus, it is possible to which effectively semiconductor structure is transferred on substrate.For example, according to an embodiment of the invention, can be with
The semiconductor structure that luminescent color is red micro- light emitting diode is synchronized and is transferred on substrate, luminescent color be it is red and
The semiconductor structure needs of micro- light emitting diode of green are successively transferred on substrate respectively.
About feux rouges, green light, the micro- light emitting diode of blue light semiconductor structure specific material and first electrode and
The material of two electrodes, before detailed description has been carried out, details are not described herein.
According to an embodiment of the invention, this method can also be included in front of forming first micro- light emitting diode, in substrate
Display area first film transistor is set, first film transistor is electrically connected with first micro- light emitting diode.Thus, it is possible to
Display is realized by the micro- light emitting diode of first film transistor control first.According to an embodiment of the invention, the first film is brilliant
Body pipe can be that top gate type thin film transistor can also be bottom gate thin film transistor.Thus, it is possible to utilize top gate type thin film crystalline substance
Body pipe and bottom gate thin film crystal realize the control to micro- light emitting diode, so that the display panel applies model with wider
It encloses.About the specific structure of first film transistor, before detailed description has been carried out, details are not described herein.
S300: senser element is formed in the identification region of substrate
According to an embodiment of the invention, in this step, forming senser element in the identification region of substrate.According to the present invention
Embodiment, senser element include second micro- light emitting diode, second micro- light emitting diode be refer to venous information for identification
Light source.Thus, it is possible to obtain with the display panel for referring to vena recognition function, so that display panel safety level with higher
Not.According to an embodiment of the invention, second micro- light emitting diode is the micro- light emitting diode of infrared light.Utilizing the display as a result,
When panel is identified, the light opponent that can use the micro- light emitting diode sending of infrared light, which refers to, to be irradiated, and obtains finger interior
Blood-vessels figure, realization refer to hand vein recognition.
About the structure of second micro- light emitting diode, before detailed description has been carried out, details are not described herein.For example,
According to an embodiment of the invention, second micro- light emitting diode includes the first electrode set gradually, semiconductor structure and second
Electrode, wherein semiconductor structure can be through Metalorganic Chemical Vapor Deposition formation, and be set by film transfer method
It sets on substrate.Second micro- light emitting diode can be formed using simple method as a result,.About second micro- light emitting diode half
The material of conductor structure, before detailed description has been carried out, details are not described herein.
According to an embodiment of the invention, this method can also be included in front of forming second micro- light emitting diode, in substrate
Identification region the second thin film transistor (TFT) is set, the second thin film transistor (TFT) is electrically connected with second micro- light emitting diode.Thus, it is possible to
Display is realized by the micro- light emitting diode of the second thin film transistor (TFT) control second.According to an embodiment of the invention, the second film is brilliant
Body pipe can be that top gate type thin film transistor can also be bottom gate thin film transistor.Thus, it is possible to utilize top gate type thin film crystalline substance
Body pipe and bottom gate thin film crystal realize the control to micro- light emitting diode, so that the display panel applies model with wider
It encloses.About the specific structure of the second thin film transistor (TFT), before detailed description has been carried out, details are not described herein.
Below to the preparation process of top gate type thin film transistor according to an embodiment of the present invention and micro- light emitting diode into
Row is described in detail:
Firstly, depositing active layer material on substrate, it is based on active layer material, forms active layer by patterning processes.With
Afterwards, it is sequentially depositing gate insulation layer and grid material far from the side of substrate in active layer, is based on grid material, passes through composition work
Skill forms grid.Then, in side interlevel dielectric deposition of the grid far from gate insulation layer, by patterning processes in interlayer dielectric
The first via hole is formed in layer.Then, in side deposited metal material of the interlayer dielectric layer far from gate insulation layer, it is based on metal material
Material forms source electrode and drain electrode by patterning processes, and source electrode and drain electrode is connect by the first via hole with active layer, so as in substrate
Display area and identification region are respectively formed first film transistor and the second thin film transistor (TFT).
Then, planarization layer is coated far from the side of interlayer dielectric layer in source electrode and drain electrode, by patterning processes flat
Change region corresponding with drain electrode in layer and forms the second via hole.Then, non-in side deposition of the planarization layer far from interlayer dielectric layer
Transparent conductive material is based on nontransparent conductive material, and the first electricity of first micro- light emitting diode is respectively formed by patterning processes
The first electrode of the first electrode of pole and second micro- light emitting diode, first micro- light emitting diode is thin by the second via hole and first
The drain electrode of film transistor connects, and the first electrode of second micro- light emitting diode passes through the leakage of the second via hole and the second thin film transistor (TFT)
Pole connection.Then, pixel defining layer is formed far from the side of planarization layer in first electrode, pixel defining layer limits luminous zone
Domain.Then, the semiconductor structure and of first micro- light emitting diode is respectively formed by film transfer method in light emitting region
The semiconductor structure of two micro- light emitting diodes.Then, in side deposit passivation layer of the pixel defining layer far from first electrode, pass through
Region corresponding with semiconductor structure forms the 4th via hole to patterning processes in the passivation layer.Finally, in passivation layer far from pixel circle
The side of given layer deposits transparent conductive material, is based on transparent conductive material, is respectively formed first micro- luminous two by patterning processes
The second electrode of the second electrode of the second electrode of pole pipe and second micro- light emitting diode, first micro- light emitting diode passes through the 4th
Via hole is connect with the semiconductor structure of first micro- light emitting diode, and the second electrode of second micro- light emitting diode passes through the 4th via hole
It is connect with the semiconductor structure of second micro- light emitting diode, to form first micro- light emitting diode and second micro- light-emitting diodes
Pipe, structural reference Fig. 3 of finally formed display panel.Thus, it is possible to obtain by top gate type thin film transistor control, have
The display panel of the other and higher display quality of higher security level, so that display and sensing can carry out simultaneously.
Below to the preparation process of bottom gate thin film transistor according to an embodiment of the present invention and micro- light emitting diode into
Row is described in detail:
Firstly, the deposition of gate material on substrate, is based on grid material, forms grid by patterning processes.Then, in grid
Side extremely far from substrate deposits gate insulation layer.Then, active layer material is deposited far from the side of grid in gate insulation layer, be based on
Active layer material forms active layer by patterning processes.Then, in side deposited metal material of the active layer far from gate insulation layer
Material is based on metal material, forms source electrode and drain electrode by patterning processes, so as in the display area of substrate and identification region point
It Xing Cheng not first film transistor and the second thin film transistor (TFT).
Then, planarization layer is coated far from the side of gate insulation layer in source electrode and drain electrode, is being planarized by patterning processes
Region corresponding with drain electrode forms the second via hole in layer.Then, nontransparent in side deposition of the planarization layer far from gate insulation layer
Conductive material, be based on nontransparent conductive material, by patterning processes be respectively formed first micro- light emitting diode first electrode and
The first electrode of the first electrode of second micro- light emitting diode, first micro- light emitting diode is brilliant by the second via hole and the first film
The drain electrode of body pipe connects, and the first electrode of second micro- light emitting diode is connected by the drain electrode of the second via hole and the second thin film transistor (TFT)
It connects.Then, pixel defining layer is formed far from the side of planarization layer in first electrode, pixel defining layer limits light emitting region.
Then, the semiconductor structure of first micro- light emitting diode and second micro- is respectively formed by film transfer method in light emitting region
The semiconductor structure of light emitting diode.Then, in side deposit passivation layer of the pixel defining layer far from first electrode, pass through composition
Region corresponding with semiconductor structure forms the 4th via hole to technique in the passivation layer.Finally, in passivation layer far from pixel defining layer
Side deposit transparent conductive material, be based on transparent conductive material, be respectively formed first micro- light emitting diode by patterning processes
Second electrode and second micro- light emitting diode second electrode, the second electrode of first micro- light emitting diode passes through the 4th via hole
It is connect with the semiconductor structure of first micro- light emitting diode, the second electrode of second micro- light emitting diode passes through the 4th via hole and the
The semiconductor structure of two micro- light emitting diodes connects, to form first micro- light emitting diode and second micro- light emitting diode,
Structural reference Fig. 4 of finally formed display panel.Thus, it is possible to obtain by bottom gate thin film transistor control, have compared with
The display panel of high security level and higher display quality, so that display and sensing can carry out simultaneously.
According to an embodiment of the invention, grid material can for the monolayer materials such as Mo, Cu, Al or Mo/Al/Mo,
The multilayer materials such as MoNb/Cu/MoNb, interlayer dielectric layer can use the composite structure of SiNx, SiOx and SiNx and SiOx, source
Pole and drain material can be had using multilayer materials such as monolayer materials or Mo/Al/Mo, MoNb/Cu/MoNb such as Mo, Cu, Al
Active layer material can use oxide or low temperature polycrystalline silicon.Thus, it is possible to make thin film transistor (TFT) that there is good service performance.
About the concrete mode of patterning processes, those skilled in the art can use known technique, and details are not described herein.
In the description of the present invention, the orientation or positional relationship of the instructions such as term " on ", "lower" is based on the figure
Orientation or positional relationship is merely for convenience of the description present invention rather than requires the present invention that must be constructed and be grasped with specific orientation
Make, therefore is not considered as limiting the invention.
In the description of this specification, the description of reference term " one embodiment ", " another embodiment " etc. means to tie
The embodiment particular features, structures, materials, or characteristics described are closed to be included at least one embodiment of the present invention.At this
In specification, the schematic representation of the above terms does not necessarily have to refer to the same embodiment or example.Moreover, the tool of description
Body characteristics, structure, material or feature may be combined in any suitable manner in any one or more of the embodiments or examples.This
Outside, without conflicting with each other, those skilled in the art by different embodiments described in this specification or can show
The feature of example and different embodiments or examples is combined.In addition, it is necessary to illustrate, in this specification, term
" first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicate meaning
The quantity of the technical characteristic shown.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (14)
1. a kind of display panel characterized by comprising
Substrate, the substrate have the display area not overlapped and identification region；
The display area of the substrate is arranged in display device, the display device, and the display device includes first micro- luminous
Diode；And
The identification region of the substrate is arranged in senser element, the senser element, and the senser element includes second micro- luminous
Diode, second micro- light emitting diode are the light source for referring to venous information for identification.
2. display panel according to claim 1, which is characterized in that first micro- light emitting diode includes the micro- hair of feux rouges
The micro- light emitting diode of optical diode, green light and the micro- light emitting diode of blue light.
3. display panel according to claim 1, which is characterized in that second micro- light emitting diode is the micro- hair of infrared light
Optical diode.
4. display panel according to claim 1, which is characterized in that first micro- light emitting diode and described second
Micro- light emitting diode separately includes the first electrode set gradually, semiconductor structure and second electrode,
Wherein, the semiconductor structure includes the first doping type semiconductor layer set gradually, luminescent layer and the second doping
Type semiconductor layer, the first doping type semiconductor layer are by one in p-type semiconductor material and N-type semiconductor material
What kind was formed, the second doping type semiconductor layer is by the another kind in p-type semiconductor material and N-type semiconductor material
It is formed, the luminescent layer includes multiple quantum wells.
5. display panel according to claim 4, which is characterized in that the first electrode is by nontransparent conductive material structure
At the second electrode is made of transparent conductive material.
6. display panel according to claim 4, which is characterized in that further comprise:
First film transistor, the drain electrode of the first film transistor and the first electrode electricity of described first micro- light emitting diode
Connection；And
Second thin film transistor (TFT), the drain electrode of second thin film transistor (TFT) and the first electrode electricity of described second micro- light emitting diode
Connection.
7. display panel according to claim 6, which is characterized in that the first film transistor and described second thin
Film transistor separately includes bottom gate thin film transistor and top gate type thin film transistor.
8. a kind of display device, which is characterized in that including the described in any item display panels of claim 1-7.
9. a kind of method for making display panel characterized by comprising
Substrate is provided, the substrate has the display area not overlapped and identification region；
Display device is formed in the display area of the substrate, the display device includes first micro- light emitting diode；And
Senser element is formed in the identification region of the substrate, the senser element includes second micro- light emitting diode, and described the
Two micro- light emitting diodes are the light source for referring to venous information for identification.
10. according to the method described in claim 9, it is characterized in that, first micro- light emitting diode and described second micro-
Light emitting diode separately includes the first electrode set gradually, semiconductor structure and second electrode, the semiconductor
Structure is arranged on the substrate by film transfer method.
11. according to the method described in claim 10, it is characterized in that, first micro- light emitting diode includes that feux rouges is micro- luminous
The micro- light emitting diode of diode, green light and the micro- light emitting diode of blue light, second micro- light emitting diode are the micro- hair of infrared light
Optical diode,
Wherein, the semiconductor structure of the identical micro- light emitting diode of luminescent color, which synchronizes, is transferred on the substrate.
12. according to the method described in claim 9, it is characterized in that, forming first micro- light emitting diode and described
Before second micro- light emitting diode, further comprise:
First film transistor is formed in the display area of the substrate, the first film transistor is micro- luminous with described first
Diode electrical connection；And
The second thin film transistor (TFT) is formed in the identification region of the substrate, second thin film transistor (TFT) is micro- luminous with described second
Diode electrical connection.
13. according to the method described in claim 9, it is characterised by comprising:
Active layer, gate insulation layer, grid, interlayer dielectric layer, source electrode and drain electrode are sequentially formed, on the substrate so as to described
The display area of substrate and identification region are respectively formed first film transistor and the second thin film transistor (TFT), wherein the source electrode
It is connect by the first via hole through the interlayer dielectric layer with the active layer with the drain electrode；
The source electrode and it is described drain far from the interlayer dielectric layer side formed planarization layer, and with it is described drain electrode pair
The region answered forms the second via hole for running through the planarization layer；
Nontransparent conductive material is deposited far from the side of the interlayer dielectric layer in the planarization layer, nontransparent is led based on described
Electric material forms first electrode by patterning processes, and the first electrode is connected by second via hole and the drain electrode,
In, the first electrode of first micro- light emitting diode is connect with the drain electrode of the first film transistor, second micro- hair
The first electrode of optical diode is connect with the drain electrode of second thin film transistor (TFT)；
Pixel defining layer is formed far from the side of the planarization layer in the first electrode, the pixel defining layer restriction is set out
Light region；
Be respectively formed in the light emitting region by film transfer method the semiconductor structure of described first micro- light emitting diode with
And the semiconductor structure of second micro- light emitting diode；
Passivation layer is formed far from the side of the first electrode in the pixel defining layer, and corresponding with the semiconductor structure
Region formed run through the passivation layer the 4th via hole；And
Transparent conductive material is deposited far from the side of the pixel defining layer in the passivation layer, is based on the electrically conducting transparent material
Material forms second electrode by patterning processes, and the second electrode is connect by the 4th via hole with the semiconductor structure,
To form described first micro- light emitting diode and second micro- light emitting diode.
14. according to the method described in claim 9, it is characterised by comprising:
Grid, gate insulation layer, active layer, source electrode and drain electrode are sequentially formed, on the substrate so as in the display of the substrate
Region and identification region are respectively formed first film transistor and the second thin film transistor (TFT)；
Planarization layer is formed in the source electrode and the side far from the gate insulation layer that drains, and corresponding with the drain electrode
Region formed run through the planarization layer the second via hole；
Nontransparent conductive material is deposited far from the side of the gate insulation layer in the planarization layer, is based on the nontransparent conduction
Material forms first electrode by patterning processes, and the first electrode is connected by second via hole and the drain electrode,
In, the first electrode of first micro- light emitting diode is connect with the drain electrode of the first film transistor, second micro- hair
The first electrode of optical diode is connect with the drain electrode of second thin film transistor (TFT)；
Pixel defining layer is formed far from the side of the planarization layer in the first electrode, the pixel defining layer restriction is set out
Light region；
Be respectively formed in the light emitting region by film transfer method the semiconductor structure of described first micro- light emitting diode with
And the semiconductor structure of second micro- light emitting diode；
Passivation layer is formed far from the side of the first electrode in the pixel defining layer, and corresponding with the semiconductor structure
Region formed run through the passivation layer the 4th via hole；And
Transparent conductive material is deposited far from the side of the pixel defining layer in the passivation layer, is based on the electrically conducting transparent material
Material forms second electrode by patterning processes, and the second electrode is connect by the 4th via hole with the semiconductor structure,
To form described first micro- light emitting diode and second micro- light emitting diode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110110643A (en) * | 2019-04-29 | 2019-08-09 | 云谷（固安）科技有限公司 | A kind of display panel and display device |
| WO2020173202A1 (en) * | 2019-02-28 | 2020-09-03 | 京东方科技集团股份有限公司 | Circuit backplane of display panel, preparation method therefor and display panel |
| CN111681551A (en) * | 2020-06-28 | 2020-09-18 | 武汉华星光电技术有限公司 | Display module and electronic equipment |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130006745A (en) * | 2011-04-12 | 2013-01-18 | 김준성 | Authentication terminal using divided bar-code and computer-readable recording medium with program therefor |
| CN103488969A (en) * | 2012-06-11 | 2014-01-01 | 株式会社茉菲莉亚 | Electronic device |
| US20150046257A1 (en) * | 2011-11-23 | 2015-02-12 | Richard Tabor | Secure tokenless transaction system and method |
| JP2015038859A (en) * | 2013-07-17 | 2015-02-26 | セイコーエプソン株式会社 | Light emitting device, method of manufacturing light emitting device, light emitting and receiving device, and electronic apparatus |
| CN204258901U (en) * | 2014-04-15 | 2015-04-08 | 深圳市中科微光医疗器械技术有限公司 | For mobile terminal palm vein identification device and comprise its smart mobile phone |
| CN106934270A (en) * | 2017-05-12 | 2017-07-07 | 合肥芯福传感器技术有限公司 | Intelligent terminal with phased array biometric authentication function |
| CN107579104A (en) * | 2017-08-31 | 2018-01-12 | 京东方科技集团股份有限公司 | A kind of flexible display panels and manufacture method with fingerprint recognition |
| CN207024054U (en) * | 2016-12-30 | 2018-02-23 | 珠海市魅族科技有限公司 | Electronic equipment |
| CN107799541A (en) * | 2016-09-07 | 2018-03-13 | 李美燕 | Integrated sensing module and its manufacture method and integrated sensing component |
| CN207381405U (en) * | 2017-09-15 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
| EP3328039A1 (en) * | 2016-11-25 | 2018-05-30 | LG Display Co., Ltd. | Display device with a fingerprint sensor |
| CN108183117A (en) * | 2017-12-26 | 2018-06-19 | 深圳市华星光电技术有限公司 | Micro-led display panel and preparation method thereof |
| CN207718459U (en) * | 2018-01-04 | 2018-08-10 | 深圳市嘉博瑞实业有限公司 | Finger vein lock with slide plate finger tip platform |
| CN207780841U (en) * | 2018-01-30 | 2018-08-28 | 深兰科技（上海）有限公司 | Hand arteries and veins acquires authenticating device |
| CN108491801A (en) * | 2018-03-26 | 2018-09-04 | 武汉天马微电子有限公司 | Display panel and display device |
| CN108509829A (en) * | 2017-02-28 | 2018-09-07 | 京东方科技集团股份有限公司 | Display base plate and its driving method, display device |
| CN108509899A (en) * | 2018-03-29 | 2018-09-07 | 上海天马微电子有限公司 | A kind of display panel and display device |
-
2018
- 2018-09-14 CN CN201811072823.XA patent/CN109166469B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130006745A (en) * | 2011-04-12 | 2013-01-18 | 김준성 | Authentication terminal using divided bar-code and computer-readable recording medium with program therefor |
| US20150046257A1 (en) * | 2011-11-23 | 2015-02-12 | Richard Tabor | Secure tokenless transaction system and method |
| CN103488969A (en) * | 2012-06-11 | 2014-01-01 | 株式会社茉菲莉亚 | Electronic device |
| JP2015038859A (en) * | 2013-07-17 | 2015-02-26 | セイコーエプソン株式会社 | Light emitting device, method of manufacturing light emitting device, light emitting and receiving device, and electronic apparatus |
| CN204258901U (en) * | 2014-04-15 | 2015-04-08 | 深圳市中科微光医疗器械技术有限公司 | For mobile terminal palm vein identification device and comprise its smart mobile phone |
| CN107799541A (en) * | 2016-09-07 | 2018-03-13 | 李美燕 | Integrated sensing module and its manufacture method and integrated sensing component |
| EP3328039A1 (en) * | 2016-11-25 | 2018-05-30 | LG Display Co., Ltd. | Display device with a fingerprint sensor |
| CN207024054U (en) * | 2016-12-30 | 2018-02-23 | 珠海市魅族科技有限公司 | Electronic equipment |
| CN108509829A (en) * | 2017-02-28 | 2018-09-07 | 京东方科技集团股份有限公司 | Display base plate and its driving method, display device |
| CN106934270A (en) * | 2017-05-12 | 2017-07-07 | 合肥芯福传感器技术有限公司 | Intelligent terminal with phased array biometric authentication function |
| CN107579104A (en) * | 2017-08-31 | 2018-01-12 | 京东方科技集团股份有限公司 | A kind of flexible display panels and manufacture method with fingerprint recognition |
| CN207381405U (en) * | 2017-09-15 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
| CN108183117A (en) * | 2017-12-26 | 2018-06-19 | 深圳市华星光电技术有限公司 | Micro-led display panel and preparation method thereof |
| CN207718459U (en) * | 2018-01-04 | 2018-08-10 | 深圳市嘉博瑞实业有限公司 | Finger vein lock with slide plate finger tip platform |
| CN207780841U (en) * | 2018-01-30 | 2018-08-28 | 深兰科技（上海）有限公司 | Hand arteries and veins acquires authenticating device |
| CN108491801A (en) * | 2018-03-26 | 2018-09-04 | 武汉天马微电子有限公司 | Display panel and display device |
| CN108509899A (en) * | 2018-03-29 | 2018-09-07 | 上海天马微电子有限公司 | A kind of display panel and display device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020173202A1 (en) * | 2019-02-28 | 2020-09-03 | 京东方科技集团股份有限公司 | Circuit backplane of display panel, preparation method therefor and display panel |
| US11257852B2 (en) | 2019-02-28 | 2022-02-22 | Boe Technology Group Co., Ltd. | Circuit backplane of display panel, method for manufacturing the circuit backplane, and display panel |
| CN110110643A (en) * | 2019-04-29 | 2019-08-09 | 云谷（固安）科技有限公司 | A kind of display panel and display device |
| CN110110643B (en) * | 2019-04-29 | 2021-04-09 | 云谷（固安）科技有限公司 | Display panel and display device |
| CN111681551A (en) * | 2020-06-28 | 2020-09-18 | 武汉华星光电技术有限公司 | Display module and electronic equipment |
| CN111681551B (en) * | 2020-06-28 | 2021-07-06 | 武汉华星光电技术有限公司 | Display module and electronic equipment |
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|---|---|
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