CN109166469B - Display panel, manufacturing method and display device - Google Patents
Display panel, manufacturing method and display device Download PDFInfo
- Publication number
- CN109166469B CN109166469B CN201811072823.XA CN201811072823A CN109166469B CN 109166469 B CN109166469 B CN 109166469B CN 201811072823 A CN201811072823 A CN 201811072823A CN 109166469 B CN109166469 B CN 109166469B
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- micro light
- electrode
- thin film
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q20/00—Payment architectures, schemes or protocols
- G06Q20/38—Payment protocols; Details thereof
- G06Q20/40—Authorisation, e.g. identification of payer or payee, verification of customer or shop credentials; Review and approval of payers, e.g. check credit lines or negative lists
- G06Q20/401—Transaction verification
- G06Q20/4014—Identity check for transactions
- G06Q20/40145—Biometric identity checks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/14—Vascular patterns
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Business, Economics & Management (AREA)
- Theoretical Computer Science (AREA)
- Accounting & Taxation (AREA)
- Computer Security & Cryptography (AREA)
- Multimedia (AREA)
- Human Computer Interaction (AREA)
- Finance (AREA)
- Strategic Management (AREA)
- General Business, Economics & Management (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a display panel, a manufacturing method and a display device. The display panel includes: the display device comprises a substrate, a display unit and a display unit, wherein the substrate is provided with a display area and an identification area which are not overlapped with each other; a display device disposed in a display area of the substrate, the display device including a first micro light emitting diode; and the sensing device is arranged in the identification area of the substrate and comprises a second micro light-emitting diode which is a light source for identifying the finger vein information. Thus, the display panel has at least one of the following advantages: the display panel integrates a light source and a display device for identifying the finger vein information, is an integrated display panel, and has a simple structure; the display panel has a finger vein recognition function and a higher security level; the display panel has high brightness, high resolution, long service life, low power consumption and low cost.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel, a manufacturing method and a display device.
Background
The fingerprint identification technology realizes the authentication of the identity by utilizing the characteristics that the fingerprint of each person is different on patterns, breakpoints and cross points and presents uniqueness and stability. The face recognition technology recognizes the face through a computer technology of analysis and comparison, and realizes the identity authentication by utilizing the biological characteristics of the person. At present, the display device (for example, a mobile phone, a tablet computer, etc.) often adopts the above two identification technologies to perform operations such as payment, identity authentication, security encryption, etc., and the above identification technologies are convenient and fast, and bring better experience to the display device.
However, improvements of the display panel, the manufacturing method thereof, and the display device are still needed.
Disclosure of Invention
The present invention is based on the discovery and recognition by the inventors of the following facts and problems:
at present, the display device has the problem of low security level when operations such as payment and identity authentication are carried out. The inventor finds that the reason is mainly due to the fact that the fingerprint identification technology and the face identification technology adopted by the current display device have more defects. Specifically, aiming at the fingerprint identification technology, the fingerprint is easy to steal, can be cracked only by using simple fingerprint copying gloves, is positioned on the surface of a finger, belongs to a main object touching organ, is easy to wear, and therefore the identity authentication effect is influenced. For the face recognition technology, the face has similarity and changeability as biological characteristics, the accuracy of the face recognition technology can be influenced by the characteristics, and in addition, factors such as illumination conditions, face covers, age and the like can also have adverse effects on the accuracy of the face recognition technology.
As well known to those skilled in the art, the finger vein recognition technology is a method for performing identity authentication using a blood vessel distribution pattern formed when blood flows through a superficial blood vessel under the skin of a finger as a biometric feature. The finger vein recognition technology forms a dynamic image through blood flow, is a living body recognition technology, mainly depends on infrared light to irradiate fingers to obtain blood vessel lines, is a living body password formed by blood flow, and the characteristics disappear after the finger vein recognition technology is separated from a human body, so the finger vein recognition technology is difficult to steal. The finger veins have the characteristics of uniqueness and stability, namely, the finger vein images of each person are different, the vein images of different fingers of the same person are also different, and the vein shapes of healthy adults do not change any more. When the finger is irradiated by near infrared rays, hemoglobin in red blood cells flowing through the vein has an absorption effect on the near infrared rays with the wavelength of about 700-1000nm, and then the finger irradiated by the infrared rays is photographed by a camera only sensing the infrared rays, so that a blood vessel venation map in the finger can be collected, and the finger vein recognition can be realized.
Compared with fingerprint identification technology and face identification technology, the finger vein identification technology has natural anti-counterfeiting property and vividness and higher safety level. At present, the finger vein recognition technology is widely applied to systems such as entrance guard, insurance and the like, and cannot be directly transplanted to display devices such as mobile phones, tablet computers and the like due to large volume. Although there is a mobile terminal using a finger vein recognition device in the prior art, the inventor finds that the mobile terminal uses an externally-mounted illumination module, that is, the illumination module of the finger vein recognition device and the mobile terminal are designed separately, on one hand, the illumination module is easy to lose, and on the other hand, the mobile terminal has a complicated structure and is not beneficial to operation during recognition.
The present invention aims to alleviate or solve at least to some extent at least one of the above mentioned problems.
In one aspect of the present invention, a display panel is provided. The display panel includes: the display device comprises a substrate, a display unit and a display unit, wherein the substrate is provided with a display area and an identification area which are not overlapped with each other; a display device disposed in a display area of the substrate, the display device including a first micro light emitting diode; and the sensing device is arranged in the identification area of the substrate and comprises a second micro light-emitting diode which is a light source for identifying the finger vein information. Thus, the display panel has at least one of the following advantages: the display panel integrates a light source and a display device for identifying the finger vein information, is an integrated display panel, and has a simple structure; the display panel has a finger vein recognition function and a higher security level; the display panel has high brightness, high resolution, long service life, low power consumption and low cost.
According to an embodiment of the present invention, the first micro light emitting diode includes a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. Thereby, three kinds of pixel light of red, green, and blue can be formed so as to represent a plurality of colors.
According to an embodiment of the present invention, the second micro light emitting diode is an infrared micro light emitting diode. Therefore, when the display panel is used for identification, the finger can be irradiated by light emitted by the infrared micro light-emitting diode, a blood vessel venation map in the finger can be obtained, and finger vein identification can be realized.
According to an embodiment of the present invention, the first micro light emitting diode and the second micro light emitting diode respectively and independently include a first electrode, a semiconductor structure, and a second electrode, which are sequentially disposed, wherein the semiconductor structure includes a first doping type semiconductor layer, a light emitting layer, and a second doping type semiconductor layer, which are sequentially disposed, the first doping type semiconductor layer is formed of one of a P-type semiconductor material and an N-type semiconductor material, the second doping type semiconductor layer is formed of the other of the P-type semiconductor material and the N-type semiconductor material, and the light emitting layer includes a multiple quantum well.
According to an embodiment of the invention, the first electrode is made of a non-transparent conductive material and the second electrode is made of a transparent conductive material. Therefore, the first electrode can be used for reflecting light emitted by the micro light-emitting diode, so that light rays are emitted from one side of the display panel, the utilization rate of the light rays is improved, and the brightness of the display panel is improved.
According to an embodiment of the present invention, the display panel further includes: a first thin film transistor, a drain electrode of which is electrically connected with a first electrode of the first micro light emitting diode; and the drain electrode of the second thin film transistor is electrically connected with the first electrode of the second micro light-emitting diode. Therefore, the first micro light-emitting diode and the second micro light-emitting diode are respectively controlled by the corresponding thin film transistor, so that the display and the sensing can be simultaneously carried out.
According to an embodiment of the present invention, the first thin film transistor and the second thin film transistor independently include a bottom gate type thin film transistor and a top gate type thin film transistor, respectively. Therefore, the micro light-emitting diode can be controlled by utilizing the top gate type thin film transistor and the bottom gate type thin film transistor, so that the display panel has a wide application range.
In another aspect of the present invention, a display device is provided. According to an embodiment of the present invention, the display device includes the display panel described above, and thus, the display device has all the features and advantages of the display panel described above, which are not described herein again. Generally speaking, the display device has a finger vein recognition function and a high security level, and has the advantages of high brightness, high resolution, long service life, low power consumption, low cost and the like.
In another aspect of the present invention, a method of fabricating a display panel is provided. According to an embodiment of the invention, the method comprises: providing a substrate, wherein the substrate is provided with a display area and an identification area which are not overlapped with each other; forming a display device in a display area of the substrate, the display device including a first micro light emitting diode; and forming a sensing device in the identification area of the substrate, wherein the sensing device comprises a second micro light-emitting diode, and the second micro light-emitting diode is a light source for identifying the finger vein information. Therefore, the display panel with the integrated structure, high security level, high brightness, high resolution, long service life, low power consumption, low cost and the like can be obtained by a simple method.
According to an embodiment of the present invention, the first micro light emitting diode and the second micro light emitting diode each independently include a first electrode, a semiconductor structure, and a second electrode, which are sequentially disposed, the semiconductor structure being disposed on the substrate by a thin film transfer method. Thus, the first micro light emitting diode and the second micro light emitting diode can be formed by a simple method.
According to an embodiment of the present invention, the first micro light emitting diode includes a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode, and the second micro light emitting diode is an infrared micro light emitting diode, wherein semiconductor structures of the micro light emitting diodes having the same emission color are synchronously transferred onto the substrate. Thereby, the semiconductor structure can be effectively transferred to the substrate.
According to an embodiment of the present invention, before forming the first micro light emitting diode and the second micro light emitting diode, further comprising: forming a first thin film transistor in a display area of the substrate, wherein the first thin film transistor is electrically connected with the first micro light-emitting diode; and forming a second thin film transistor in the identification area of the substrate, wherein the second thin film transistor is electrically connected with the second micro light-emitting diode. Therefore, the first micro light-emitting diode and the second micro light-emitting diode are respectively controlled by the corresponding thin film transistor, so that the display and the sensing can be simultaneously carried out.
According to an embodiment of the invention, the method comprises: sequentially forming an active layer, a gate insulating layer, a gate electrode, an interlayer dielectric layer, a source electrode and a drain electrode on the substrate so as to form a first thin film transistor and a second thin film transistor in a display area and an identification area of the substrate respectively, wherein the source electrode and the drain electrode are connected with the active layer through a first via hole penetrating through the interlayer dielectric layer; forming a planarization layer on one side of the source electrode and the drain electrode, which is far away from the interlayer dielectric layer, and forming a second through hole penetrating through the planarization layer in a region corresponding to the drain electrode; depositing a non-transparent conductive material on one side of the planarization layer away from the interlayer dielectric layer, and forming a first electrode through a composition process based on the non-transparent conductive material, wherein the first electrode is connected with the drain electrode through the second via hole, the first electrode of the first micro light-emitting diode is connected with the drain electrode of the first thin film transistor, and the first electrode of the second micro light-emitting diode is connected with the drain electrode of the second thin film transistor; forming a pixel defining layer on a side of the first electrode remote from the planarization layer, the pixel defining layer defining a light emitting region; forming a semiconductor structure of the first micro light-emitting diode and a semiconductor structure of the second micro light-emitting diode in the light-emitting area by a thin film transfer method; forming a passivation layer on one side of the pixel defining layer far away from the first electrode, and forming a fourth through hole penetrating through the passivation layer in a region corresponding to the semiconductor structure; and depositing a transparent conductive material on one side of the passivation layer far away from the pixel defining layer, and forming a second electrode through a composition process based on the transparent conductive material, wherein the second electrode is connected with the semiconductor structure through the fourth via hole so as to form the first micro light-emitting diode and the second micro light-emitting diode. Thus, an integrated display panel controlled by a top gate type thin film transistor, having a high security level and a high display quality can be obtained.
According to an embodiment of the invention, the method comprises: sequentially forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate so as to form a first thin film transistor and a second thin film transistor in a display area and an identification area of the substrate, respectively; forming a planarization layer on one side of the source electrode and the drain electrode, which is far away from the gate insulating layer, and forming a second through hole penetrating through the planarization layer in a region corresponding to the drain electrode; depositing a non-transparent conductive material on one side of the planarization layer, which is far away from the gate insulating layer, forming a first electrode through a composition process based on the non-transparent conductive material, wherein the first electrode is connected with the drain electrode through the second via hole, the first electrode of the first micro light-emitting diode is connected with the drain electrode of the first thin film transistor, and the first electrode of the second micro light-emitting diode is connected with the drain electrode of the second thin film transistor; forming a pixel defining layer on a side of the first electrode remote from the planarization layer, the pixel defining layer defining a light emitting region; forming a semiconductor structure of the first micro light-emitting diode and a semiconductor structure of the second micro light-emitting diode in the light-emitting area by a thin film transfer method; forming a passivation layer on one side of the pixel defining layer far away from the first electrode, and forming a fourth through hole penetrating through the passivation layer in a region corresponding to the semiconductor structure; and depositing a transparent conductive material on one side of the passivation layer far away from the pixel defining layer, and forming a second electrode through a composition process based on the transparent conductive material, wherein the second electrode is connected with the semiconductor structure through the fourth via hole so as to form the first micro light-emitting diode and the second micro light-emitting diode. Thus, an integrated display panel controlled by a bottom gate type thin film transistor, having a higher security level and higher display quality can be obtained.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a display panel according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a display panel according to another embodiment of the present invention;
FIG. 4 is a schematic diagram of a display panel according to another embodiment of the present invention; and
FIG. 5 is a flow chart illustrating a method for fabricating a display panel according to an embodiment of the invention.
Description of reference numerals:
100: a substrate; 110: a display area; 120: identifying an area; 200: a first micro light emitting diode; 300: a second micro light emitting diode; 400: a first thin film transistor; 500: a second thin film transistor; 600: a planarization layer; 700: a pixel defining layer; 800: a passivation layer; 10: a first electrode; 20: a semiconductor structure; 21: a first doping type semiconductor layer; 22: a light emitting layer; 23: a second doping type semiconductor layer; 30: a second electrode; 40: an active layer; 50: a gate insulating layer; 60: a gate electrode; 70: an interlayer dielectric layer; 80: a source electrode; 90: and a drain electrode.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In one aspect of the present invention, a display panel is provided. According to an embodiment of the present invention, referring to fig. 1, the display panel includes: a substrate 100, a display device, and a sensing device. The substrate 100 has a display area 110 and an identification area 120 which are not overlapped with each other, the display device is disposed in the display area 110 of the substrate 100, the sensing device is disposed in the identification area 120 of the substrate 100, the display device includes a first micro light emitting diode 200, the sensing device includes a second micro light emitting diode 300, and the second micro light emitting diode 300 is a light source for identifying finger vein information. Thus, the display panel has at least one of the following advantages: the display panel integrates a light source and a display device for identifying the finger vein information, is an integrated display panel, and has a simple structure; the display panel has a finger vein recognition function and a higher security level; the display panel has high brightness, high resolution, long service life, low power consumption and low cost.
According to the embodiment of the invention, based on a Micro light emitting diode display technology (Micro LED), the light source for identifying finger vein information is integrated in the display panel by utilizing the characteristic that the Micro LED can be used as a light source and can also be used as pixel light, so that the display panel is of an integrated structure and has a finger vein identification function, thereby having higher safety level, and meanwhile, the display panel has the advantages of high brightness, high resolution, long service life, low power consumption, low cost and the like.
The following describes the structure of the display panel in detail according to the specific embodiment of the present invention:
as will be understood by those skilled in the art, the micro-LED display technology refers to the formation of ultra-fine pitch LEDs by the conventional method of arraying, scaling and then transferring the addressing to a circuit substrate. Specifically, the length of the light emitting diode at millimeter level is further reduced to micron level to achieve the technology of ultra-high pixel and ultra-high resolution. According to the embodiment of the present invention, the first micro light emitting diode 200 and the second micro light emitting diode 300 for identifying the light source of the finger vein information, which constitute the display device, are integrated on the substrate 100, and the display of the display device and the irradiation of the finger vein are realized by controlling the light emitting colors of the micro light emitting diodes, so that the display panel is of an integrated structure and has a high security level and high display quality.
According to an embodiment of the present invention, the first micro light emitting diode 200 includes a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. Thereby, three kinds of pixel light of red, green, and blue can be formed so as to represent a plurality of colors. According to an embodiment of the present invention, the second micro light emitting diode 300 is an infrared micro light emitting diode. Therefore, when the display panel is used for identification, the finger can be irradiated by light emitted by the infrared micro light-emitting diode, a blood vessel venation map in the finger can be obtained, and finger vein identification can be realized.
According to the embodiment of the invention, after the finger is irradiated by the light emitted by the infrared micro light emitting diode, the finger irradiated by the infrared light is photographed by using the camera only sensing the infrared light, and the vein image in the mobile phone is collected so as to realize the finger vein recognition. The specific position of the camera that only senses infrared light is not particularly limited as long as the collection of the blood vessels inside the finger can be achieved, and the camera can be designed by those skilled in the art according to specific situations.
According to an embodiment of the present invention, referring to fig. 2, the first micro light emitting diode 200 and the second micro light emitting diode 300 respectively and independently include the first electrode 10, the semiconductor structure 20, and the second electrode 30, which are sequentially disposed. The semiconductor structure 20 includes a first doping type semiconductor layer 21, a light emitting layer 22 and a second doping type semiconductor layer 23 which are sequentially arranged, the first doping type semiconductor layer 21 is formed by one of a P-type semiconductor material and an N-type semiconductor material, the second doping type semiconductor layer 23 is formed by the other of the P-type semiconductor material and the N-type semiconductor material, and the light emitting layer 22 includes a multiple quantum well.
As will be appreciated by those skilled in the art, the wavelength of the red light emitting diode is generally 650 to 700nm, the wavelength of the green light emitting diode is generally 555 to 570nm, the wavelength of the blue light emitting diode is generally 460 to 470nm, the wavelength of the infrared light emitting diode is generally 850nm, 870nm, 880nm, 940nm and 980nm, the color of the light emitted by the light emitting diode is related to the wavelength of the emitted light, and the wavelength of the emitted light depends on the semiconductor material used for the light emitting diode. According to the embodiment of the invention, the material of the red micro light emitting diode semiconductor structure can be gallium arsenide, the material of the green micro light emitting diode semiconductor structure can be gallium phosphide, the material of the blue micro light emitting diode semiconductor structure can be gallium nitride, and the material of the infrared micro light emitting diode semiconductor structure can be gallium arsenide or gallium aluminum arsenide.
According to an embodiment of the present invention, the first electrode 10 may be formed of a non-transparent conductive material, and the second electrode 30 may be formed of a transparent conductive material. Therefore, the first electrode can be used for reflecting light emitted by the micro light-emitting diode, so that light rays are emitted from one side of the display panel, the utilization rate of the light rays is improved, and the brightness of the display panel is improved. Specific materials for the first electrode and the second electrode are not particularly limited as long as the above conditions are satisfied, and those skilled in the art can design them as appropriate. For example, according to an embodiment of the present invention, the first electrode 10 may be made of Ni/Au, Ti/Au, Ni/Cu, and the second electrode 30 may be made of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO).
According to an embodiment of the present invention, referring to fig. 3 and 4, the display panel may further include: a first thin film transistor 400 and a second thin film transistor 500, wherein the first thin film transistor 400 is disposed in the display region of the substrate 100 and electrically connected to the first micro light emitting diode, and the second thin film transistor 500 is disposed in the identification region of the substrate 100 and electrically connected to the second micro light emitting diode. Therefore, the first micro light-emitting diode and the second micro light-emitting diode are respectively controlled by the corresponding thin film transistor, so that the display and the sensing can be simultaneously carried out.
According to an embodiment of the present invention, referring to fig. 3, the first thin film transistor 400 and the second thin film transistor 500 may be both top gate thin film transistors, and specifically, include an active layer 40, a gate insulating layer 50, a gate electrode 60, an interlayer dielectric layer 70, a source electrode 80, and a drain electrode 90 sequentially disposed on a substrate 100, wherein the source electrode 80 and the drain electrode 90 are disposed at the same layer and connected to the active layer 40 through a first via a penetrating through the interlayer dielectric layer 70. According to other embodiments of the present invention, referring to fig. 4, the first thin film transistor 400 and the second thin film transistor 500 may be bottom gate thin film transistors, and specifically, include a gate electrode 60, a gate insulating layer 50, an active layer 40, a source electrode 80, and a drain electrode 90, which are sequentially disposed on a substrate 100, and the source electrode 80 and the drain electrode 90 are disposed at the same layer. Therefore, the micro light-emitting diode can be controlled by utilizing the top gate type thin film transistor and the bottom gate type thin film transistor, so that the display panel has a wide application range.
According to the embodiment of the present invention, the first electrode 10A of the first micro light emitting diode is connected to the drain 90A of the first thin film transistor 400, and the first electrode 10B of the second micro light emitting diode is connected to the drain 90B of the second thin film transistor 500. Therefore, the first micro light-emitting diode and the first thin film transistor can be electrically connected, and the second micro light-emitting diode and the second thin film transistor can be electrically connected.
According to an embodiment of the present invention, referring to fig. 3 and 4, a planarization layer 600 is disposed on a side of the source electrode 80 and the drain electrode 90 away from the substrate 100, a second via B is disposed in a region of the planarization layer 600 corresponding to the drain electrode 90, a first electrode 10A of the first micro light emitting diode and a first electrode 10B of the second micro light emitting diode are respectively connected to the drain electrode 90A of the first thin film transistor 400 and the drain electrode 90B of the second thin film transistor 500 through the second via B, a pixel defining layer 700 is disposed on a side of the first electrode 10 away from the planarization layer 600, the pixel defining layer 700 defines a light emitting region C, semiconductor structures 20A and 20B are respectively disposed in the light emitting region C, the semiconductor structure 20A is connected to the first electrode 10A, the semiconductor structure 20B is connected to the first electrode 10B, a passivation layer 800 is disposed on a side of the pixel defining layer 700 away from the first electrode 10, the passivation layer 800 is provided with a fourth via D in a region corresponding to the semiconductor structure 20, and the second electrodes 30A and 30B are connected to the semiconductor structures 20A and 20B, respectively, through the fourth via D. Therefore, the micro light-emitting diode can be electrically connected with the corresponding thin film transistor, so that the thin film transistor can control the micro light-emitting diode, and display and sensing can be carried out simultaneously.
In another aspect of the present invention, a display device is provided. According to an embodiment of the present invention, the display device includes the display panel described above, and thus, the display device has all the features and advantages of the display panel described above, which are not described herein again. Generally speaking, the display device has a finger vein recognition function and a high security level, and has the advantages of high brightness, high resolution, long service life, low power consumption, low cost and the like.
In another aspect of the present invention, a method of fabricating a display panel is provided. According to an embodiment of the present invention, the display panel manufactured by the method may be the display panel described above, and thus, the display panel manufactured by the method may have the same features and advantages as the display panel described above, and will not be described herein again.
According to an embodiment of the invention, referring to fig. 5, the method comprises:
s100: providing a substrate
According to an embodiment of the invention, in this step, a substrate is provided. According to the embodiment of the invention, the substrate is provided with the display area and the identification area which are not overlapped with each other, so that the display device and the sensing device can be conveniently arranged in the corresponding areas in the subsequent steps.
S200: forming a display device in a display area of a substrate
According to an embodiment of the present invention, in this step, a display device is formed in the display region of the substrate. According to an embodiment of the present invention, a display device includes a first micro light emitting diode including a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode. Thereby, three kinds of pixel light of red, green, and blue can be formed so as to represent a plurality of colors. The structure of the first micro light emitting diode is described in detail above, and is not described in detail here. For example, according to an embodiment of the present invention, the first micro light emitting diode includes a first electrode, a semiconductor structure, and a second electrode sequentially disposed, wherein the semiconductor structure may be formed by a metal organic chemical vapor deposition method and disposed on the substrate by a thin film transfer method. Thus, the first micro light emitting diode can be formed by a simple method.
According to the substrate of the embodiment of the invention, although the light source for vein recognition is added in the non-display area (recognition area), the light source for recognition and the micro light emitting diode for display in the display area have the same device structure and are also in a micro light emitting diode structure, so that the micro light emitting diode for display (first micro light emitting diode) and the sensor light source for recognition (second micro light emitting diode) can be synchronously formed. Therefore, the production process can be simplified on the premise of increasing the functions of the display panel and ensuring the sensing sensitivity of the identification sensor.
According to the embodiment of the invention, the semiconductor structures of the micro light emitting diodes with the same light emitting color can be synchronously transferred to the substrate. Thereby, the semiconductor structure can be effectively transferred to the substrate. For example, according to the embodiment of the present invention, the semiconductor structures of the micro light emitting diodes emitting red light can be simultaneously transferred onto the substrate, and the semiconductor structures of the micro light emitting diodes emitting red light and green light need to be sequentially transferred onto the substrate, respectively.
The specific materials of the semiconductor structure of the red, green and blue micro-leds and the materials of the first and second electrodes have been described in detail above, and are not described again here.
According to an embodiment of the present invention, the method may further include disposing a first thin film transistor in the display region of the substrate before forming the first micro light emitting diode, the first thin film transistor being electrically connected to the first micro light emitting diode. Therefore, the first micro light emitting diode can be controlled by the first thin film transistor to realize display. According to an embodiment of the present invention, the first thin film transistor may be a top gate type thin film transistor or a bottom gate type thin film transistor. Therefore, the micro light-emitting diode can be controlled by utilizing the top gate type thin film transistor and the bottom gate type thin film transistor, so that the display panel has a wide application range. The detailed description of the first thin film transistor is not repeated herein, but the detailed description is already provided above.
S300: forming sensing devices in the identification areas of a substrate
According to an embodiment of the invention, in this step, the sensor device is formed in the identification area of the substrate. According to an embodiment of the present invention, the sensing device includes a second micro light emitting diode, which is a light source for identifying the finger vein information. Thereby, a display panel having a finger vein recognition function can be obtained, so that the display panel has a higher security level. According to an embodiment of the present invention, the second micro light emitting diode is an infrared micro light emitting diode. Therefore, when the display panel is used for identification, the finger can be irradiated by light emitted by the infrared micro light-emitting diode, a blood vessel venation map in the finger can be obtained, and finger vein identification can be realized.
The structure of the second micro light emitting diode is described in detail above, and is not described in detail here. For example, according to an embodiment of the present invention, the second micro light emitting diode includes a first electrode, a semiconductor structure, and a second electrode sequentially disposed, wherein the semiconductor structure may be formed by a metal organic chemical vapor deposition method and disposed on the substrate by a thin film transfer method. Thus, the second micro light emitting diode can be formed by a simple method. The materials of the second micro-led semiconductor structure have been described in detail above, and are not described in detail here.
According to an embodiment of the present invention, the method may further include disposing a second thin film transistor on the identification region of the substrate before forming the second micro light emitting diode, the second thin film transistor being electrically connected to the second micro light emitting diode. Therefore, the second micro light emitting diode can be controlled by the second thin film transistor to realize display. According to an embodiment of the present invention, the second thin film transistor may be a top gate type thin film transistor or a bottom gate type thin film transistor. Therefore, the micro light-emitting diode can be controlled by utilizing the top gate type thin film transistor and the bottom gate type thin film transistor, so that the display panel has a wide application range. The detailed structure of the second thin film transistor has already been described above, and is not described herein again.
The following describes in detail the processes for manufacturing a top gate thin film transistor and a micro light emitting diode according to an embodiment of the present invention:
first, an active layer material is deposited on a substrate, and an active layer is formed through a patterning process based on the active layer material. And then, sequentially depositing a gate insulating layer and a gate material on the side of the active layer far away from the substrate, and forming a gate through a patterning process based on the gate material. And then, depositing an interlayer dielectric layer on one side of the grid electrode, which is far away from the grid insulating layer, and forming a first through hole in the interlayer dielectric layer through a patterning process. And then, depositing a metal material on one side of the interlayer dielectric layer far away from the gate insulating layer, forming a source electrode and a drain electrode through a composition process based on the metal material, wherein the source electrode and the drain electrode are connected with the active layer through the first through hole, so that a first thin film transistor and a second thin film transistor are respectively formed in the display area and the identification area of the substrate.
And then coating a planarization layer on the side of the source electrode and the drain electrode, which is far away from the interlayer dielectric layer, and forming a second through hole in the planarization layer at the region corresponding to the drain electrode through a patterning process. And then, depositing a non-transparent conductive material on one side of the planarization layer, which is far away from the interlayer dielectric layer, respectively forming a first electrode of a first micro light-emitting diode and a first electrode of a second micro light-emitting diode through a composition process based on the non-transparent conductive material, wherein the first electrode of the first micro light-emitting diode is connected with the drain electrode of the first thin film transistor through a second through hole, and the first electrode of the second micro light-emitting diode is connected with the drain electrode of the second thin film transistor through the second through hole. Subsequently, a pixel defining layer is formed on a side of the first electrode remote from the planarization layer, the pixel defining layer defining a light emitting region. Subsequently, the semiconductor structure of the first micro light emitting diode and the semiconductor structure of the second micro light emitting diode are formed in the light emitting region by a thin film transfer method, respectively. And then, depositing a passivation layer on one side of the pixel defining layer far away from the first electrode, and forming a fourth through hole in a region of the passivation layer corresponding to the semiconductor structure through a patterning process. And finally, depositing a transparent conductive material on one side of the passivation layer, which is far away from the pixel defining layer, respectively forming a second electrode of the first micro light-emitting diode and a second electrode of the second micro light-emitting diode through a composition process based on the transparent conductive material, wherein the second electrode of the first micro light-emitting diode is connected with the semiconductor structure of the first micro light-emitting diode through a fourth through hole, and the second electrode of the second micro light-emitting diode is connected with the semiconductor structure of the second micro light-emitting diode through the fourth through hole so as to form the first micro light-emitting diode and the second micro light-emitting diode, and finally forming the structure of the display panel with reference to fig. 3. Thus, a display panel controlled by a top gate type thin film transistor having a higher security level and higher display quality can be obtained, so that display and sensing can be performed simultaneously.
The following describes in detail the processes for manufacturing a bottom gate thin film transistor and a micro light emitting diode according to an embodiment of the present invention:
first, a gate material is deposited on a substrate, and a gate electrode is formed through a patterning process based on the gate material. Subsequently, a gate insulating layer is deposited on the side of the gate electrode remote from the substrate. Subsequently, an active layer material is deposited on the side of the gate insulating layer away from the gate electrode, and an active layer is formed through a patterning process based on the active layer material. And then, depositing a metal material on the side of the active layer far away from the gate insulating layer, and forming a source electrode and a drain electrode through a patterning process based on the metal material so as to form a first thin film transistor and a second thin film transistor in the display area and the identification area of the substrate respectively.
Subsequently, a planarization layer is coated on the sides of the source and drain electrodes away from the gate insulating layer, and a second via hole is formed in a region of the planarization layer corresponding to the drain electrode through a patterning process. And then, depositing a non-transparent conductive material on one side of the planarization layer, which is far away from the gate insulating layer, respectively forming a first electrode of a first micro light-emitting diode and a first electrode of a second micro light-emitting diode through a composition process based on the non-transparent conductive material, wherein the first electrode of the first micro light-emitting diode is connected with the drain electrode of the first thin film transistor through a second through hole, and the first electrode of the second micro light-emitting diode is connected with the drain electrode of the second thin film transistor through the second through hole. Subsequently, a pixel defining layer is formed on a side of the first electrode remote from the planarization layer, the pixel defining layer defining a light emitting region. Subsequently, the semiconductor structure of the first micro light emitting diode and the semiconductor structure of the second micro light emitting diode are formed in the light emitting region by a thin film transfer method, respectively. And then, depositing a passivation layer on one side of the pixel defining layer far away from the first electrode, and forming a fourth through hole in a region of the passivation layer corresponding to the semiconductor structure through a patterning process. And finally, depositing a transparent conductive material on one side of the passivation layer, which is far away from the pixel defining layer, respectively forming a second electrode of the first micro light-emitting diode and a second electrode of the second micro light-emitting diode through a composition process based on the transparent conductive material, wherein the second electrode of the first micro light-emitting diode is connected with the semiconductor structure of the first micro light-emitting diode through a fourth through hole, the second electrode of the second micro light-emitting diode is connected with the semiconductor structure of the second micro light-emitting diode through the fourth through hole so as to form the first micro light-emitting diode and the second micro light-emitting diode, and finally forming the structure of the display panel with reference to fig. 4. Thus, a display panel controlled by a bottom gate type thin film transistor having a higher security level and higher display quality can be obtained, so that display and sensing can be performed simultaneously.
According to the embodiment of the invention, the gate material may be a single-layer material such as Mo, Cu, Al, or the like, or a multi-layer material such as Mo/Al/Mo, MoNb/Cu/MoNb, or the like, the interlayer dielectric layer may adopt SiNx, SiOx, or a composite structure of SiNx and SiOx, the source and drain materials may adopt a single-layer material such as Mo, Cu, Al, or the like, or a multi-layer material such as Mo/Al/Mo, MoNb/Cu/MoNb, or the like, and the active layer material may adopt an oxide or low-temperature polysilicon. Therefore, the thin film transistor has good use performance. As to the specific manner of the patterning process, a process well known to those skilled in the art may be employed, and will not be described herein.
In the description of the present invention, the terms "upper", "lower", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention but do not require that the present invention must be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description herein, references to the description of "one embodiment," "another embodiment," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. In addition, it should be noted that the terms "first" and "second" in this specification are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (13)
1. A display panel, comprising:
the display device comprises a substrate, a display unit and a display unit, wherein the substrate is provided with a display area and an identification area which are not overlapped with each other;
a display device disposed in a display area of the substrate, the display device including a first micro light emitting diode; and
a sensing device disposed in the identification region of the substrate, the sensing device including a second micro light emitting diode as a light source for identifying finger vein information,
the second micro light-emitting diode is an infrared light micro light-emitting diode.
2. The display panel of claim 1 wherein the first micro light emitting diodes comprise red, green and blue micro light emitting diodes.
3. The display panel according to claim 1, wherein the first micro light emitting diode and the second micro light emitting diode each independently comprise a first electrode, a semiconductor structure, and a second electrode arranged in this order,
the semiconductor structure comprises a first doping type semiconductor layer, a light emitting layer and a second doping type semiconductor layer which are sequentially arranged, wherein the first doping type semiconductor layer is formed by one of a P type semiconductor material and an N type semiconductor material, the second doping type semiconductor layer is formed by the other one of the P type semiconductor material and the N type semiconductor material, and the light emitting layer comprises a multi-quantum well.
4. The display panel according to claim 3, wherein the first electrode is made of a non-transparent conductive material, and wherein the second electrode is made of a transparent conductive material.
5. The display panel according to claim 3, characterized by further comprising:
a first thin film transistor, a drain electrode of which is electrically connected with a first electrode of the first micro light emitting diode; and
and the drain electrode of the second thin film transistor is electrically connected with the first electrode of the second micro light-emitting diode.
6. The display panel according to claim 5, wherein the first thin film transistor and the second thin film transistor each independently comprises a bottom gate thin film transistor and a top gate thin film transistor.
7. A display device characterized by comprising the display panel according to any one of claims 1 to 6.
8. A method of making a display panel, comprising:
providing a substrate, wherein the substrate is provided with a display area and an identification area which are not overlapped with each other;
forming a display device in a display area of the substrate, the display device including a first micro light emitting diode; and
and forming a sensing device in the identification area of the substrate, wherein the sensing device comprises a second micro light-emitting diode, the second micro light-emitting diode is a light source for identifying finger vein information, and the second micro light-emitting diode is an infrared light micro light-emitting diode.
9. The method of claim 8, wherein the first micro light emitting diode and the second micro light emitting diode each independently comprise a first electrode, a semiconductor structure, and a second electrode sequentially disposed, the semiconductor structure being disposed on the substrate by a thin film transfer method.
10. The method of claim 9, wherein the first micro light emitting diodes comprise red micro light emitting diodes, green micro light emitting diodes, and blue micro light emitting diodes,
and the semiconductor structures of the micro light-emitting diodes with the same light-emitting color are synchronously transferred to the substrate.
11. The method of claim 8, further comprising, prior to forming the first and second micro light emitting diodes:
forming a first thin film transistor in a display area of the substrate, wherein the first thin film transistor is electrically connected with the first micro light-emitting diode; and
and forming a second thin film transistor in the identification area of the substrate, wherein the second thin film transistor is electrically connected with the second micro light-emitting diode.
12. The method of claim 8, comprising:
sequentially forming an active layer, a gate insulating layer, a gate electrode, an interlayer dielectric layer, a source electrode and a drain electrode on the substrate so as to form a first thin film transistor and a second thin film transistor in a display area and an identification area of the substrate respectively, wherein the source electrode and the drain electrode are connected with the active layer through a first via hole penetrating through the interlayer dielectric layer;
forming a planarization layer on one side of the source electrode and the drain electrode, which is far away from the interlayer dielectric layer, and forming a second through hole penetrating through the planarization layer in a region corresponding to the drain electrode;
depositing a non-transparent conductive material on one side of the planarization layer away from the interlayer dielectric layer, and forming a first electrode through a composition process based on the non-transparent conductive material, wherein the first electrode is connected with the drain electrode through the second via hole, the first electrode of the first micro light-emitting diode is connected with the drain electrode of the first thin film transistor, and the first electrode of the second micro light-emitting diode is connected with the drain electrode of the second thin film transistor;
forming a pixel defining layer on a side of the first electrode remote from the planarization layer, the pixel defining layer defining a light emitting region;
forming a semiconductor structure of the first micro light-emitting diode and a semiconductor structure of the second micro light-emitting diode in the light-emitting area by a thin film transfer method;
forming a passivation layer on one side of the pixel defining layer far away from the first electrode, and forming a fourth through hole penetrating through the passivation layer in a region corresponding to the semiconductor structure; and
depositing a transparent conductive material on the side of the passivation layer away from the pixel defining layer, and forming a second electrode through a patterning process based on the transparent conductive material, wherein the second electrode is connected with the semiconductor structure through the fourth via hole so as to form the first micro light emitting diode and the second micro light emitting diode.
13. The method of claim 8, comprising:
sequentially forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate so as to form a first thin film transistor and a second thin film transistor in a display area and an identification area of the substrate, respectively;
forming a planarization layer on one side of the source electrode and the drain electrode, which is far away from the gate insulating layer, and forming a second through hole penetrating through the planarization layer in a region corresponding to the drain electrode;
depositing a non-transparent conductive material on one side of the planarization layer, which is far away from the gate insulating layer, forming a first electrode through a composition process based on the non-transparent conductive material, wherein the first electrode is connected with the drain electrode through the second via hole, the first electrode of the first micro light-emitting diode is connected with the drain electrode of the first thin film transistor, and the first electrode of the second micro light-emitting diode is connected with the drain electrode of the second thin film transistor;
forming a pixel defining layer on a side of the first electrode remote from the planarization layer, the pixel defining layer defining a light emitting region;
forming a semiconductor structure of the first micro light-emitting diode and a semiconductor structure of the second micro light-emitting diode in the light-emitting area by a thin film transfer method;
forming a passivation layer on one side of the pixel defining layer far away from the first electrode, and forming a fourth through hole penetrating through the passivation layer in a region corresponding to the semiconductor structure; and
depositing a transparent conductive material on the side of the passivation layer away from the pixel defining layer, and forming a second electrode through a patterning process based on the transparent conductive material, wherein the second electrode is connected with the semiconductor structure through the fourth via hole so as to form the first micro light emitting diode and the second micro light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811072823.XA CN109166469B (en) | 2018-09-14 | 2018-09-14 | Display panel, manufacturing method and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811072823.XA CN109166469B (en) | 2018-09-14 | 2018-09-14 | Display panel, manufacturing method and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109166469A CN109166469A (en) | 2019-01-08 |
| CN109166469B true CN109166469B (en) | 2021-03-02 |
Family
ID=64879406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811072823.XA Active CN109166469B (en) | 2018-09-14 | 2018-09-14 | Display panel, manufacturing method and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109166469B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904174B (en) | 2019-02-28 | 2021-01-08 | 京东方科技集团股份有限公司 | Circuit backboard of display panel, preparation method of circuit backboard and display panel |
| CN110110643B (en) * | 2019-04-29 | 2021-04-09 | 云谷（固安）科技有限公司 | Display panel and display device |
| CN111681551B (en) * | 2020-06-28 | 2021-07-06 | 武汉华星光电技术有限公司 | Display module and electronic equipment |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130006745A (en) * | 2011-04-12 | 2013-01-18 | 김준성 | Authentication terminal using divided bar-code and computer-readable recording medium with program therefor |
| JP2015038859A (en) * | 2013-07-17 | 2015-02-26 | セイコーエプソン株式会社 | Light emitting device, method of manufacturing light emitting device, light emitting and receiving device, and electronic apparatus |
| CN106934270A (en) * | 2017-05-12 | 2017-07-07 | 合肥芯福传感器技术有限公司 | Intelligent terminal with phased array biometric authentication function |
| CN107579104A (en) * | 2017-08-31 | 2018-01-12 | 京东方科技集团股份有限公司 | A kind of flexible display panels and manufacture method with fingerprint recognition |
| CN207024054U (en) * | 2016-12-30 | 2018-02-23 | 珠海市魅族科技有限公司 | Electronic equipment |
| CN207381405U (en) * | 2017-09-15 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
| EP3328039A1 (en) * | 2016-11-25 | 2018-05-30 | LG Display Co., Ltd. | Display device with a fingerprint sensor |
| CN108491801A (en) * | 2018-03-26 | 2018-09-04 | 武汉天马微电子有限公司 | Display panel and display device |
| CN108509829A (en) * | 2017-02-28 | 2018-09-07 | 京东方科技集团股份有限公司 | Display base plate and its driving method, display device |
| CN108509899A (en) * | 2018-03-29 | 2018-09-07 | 上海天马微电子有限公司 | Display panel and display device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9378514B2 (en) * | 2011-11-23 | 2016-06-28 | Richard Tabor | Secure tokenless transaction system and method |
| JP6182830B2 (en) * | 2012-06-11 | 2017-08-23 | 株式会社モフィリア | Electronics |
| CN204258901U (en) * | 2014-04-15 | 2015-04-08 | 深圳市中科微光医疗器械技术有限公司 | For mobile terminal palm vein identification device and comprise its smart mobile phone |
| TWI650875B (en) * | 2016-09-07 | 2019-02-11 | 李美燕 | Integrated sensing module, integrated sensing component and manufacturing method thereof |
| CN108183117A (en) * | 2017-12-26 | 2018-06-19 | 深圳市华星光电技术有限公司 | Micro-led display panel and preparation method thereof |
| CN207718459U (en) * | 2018-01-04 | 2018-08-10 | 深圳市嘉博瑞实业有限公司 | Finger vein lock with slide plate finger tip platform |
| CN207780841U (en) * | 2018-01-30 | 2018-08-28 | 深兰科技（上海）有限公司 | Hand arteries and veins acquires authenticating device |
-
2018
- 2018-09-14 CN CN201811072823.XA patent/CN109166469B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130006745A (en) * | 2011-04-12 | 2013-01-18 | 김준성 | Authentication terminal using divided bar-code and computer-readable recording medium with program therefor |
| JP2015038859A (en) * | 2013-07-17 | 2015-02-26 | セイコーエプソン株式会社 | Light emitting device, method of manufacturing light emitting device, light emitting and receiving device, and electronic apparatus |
| EP3328039A1 (en) * | 2016-11-25 | 2018-05-30 | LG Display Co., Ltd. | Display device with a fingerprint sensor |
| CN207024054U (en) * | 2016-12-30 | 2018-02-23 | 珠海市魅族科技有限公司 | Electronic equipment |
| CN108509829A (en) * | 2017-02-28 | 2018-09-07 | 京东方科技集团股份有限公司 | Display base plate and its driving method, display device |
| CN106934270A (en) * | 2017-05-12 | 2017-07-07 | 合肥芯福传感器技术有限公司 | Intelligent terminal with phased array biometric authentication function |
| CN107579104A (en) * | 2017-08-31 | 2018-01-12 | 京东方科技集团股份有限公司 | A kind of flexible display panels and manufacture method with fingerprint recognition |
| CN207381405U (en) * | 2017-09-15 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
| CN108491801A (en) * | 2018-03-26 | 2018-09-04 | 武汉天马微电子有限公司 | Display panel and display device |
| CN108509899A (en) * | 2018-03-29 | 2018-09-07 | 上海天马微电子有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109166469A (en) | 2019-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109166469B (en) | Display panel, manufacturing method and display device | |
| US10559632B2 (en) | Display substrate, method for manufacturing the same and display apparatus | |
| TWI658410B (en) | Optical imaging system with variable light field for biometrics application | |
| WO2019085680A1 (en) | Display panel, display device, and display panel manufacturing method | |
| CN109541842B (en) | Display panel | |
| CN108647598B (en) | Display panel and display device | |
| CN108735786B (en) | Organic light emitting display panel and organic light emitting display device | |
| CN107451576A (en) | Array substrate, preparation method thereof, display panel and display device | |
| CN107126219A (en) | Photosensitive thin film device and the biological information sensing device further containing photosensitive thin film device | |
| CN108491801A (en) | Display panel and display device | |
| CN108010969B (en) | Sensing unit and manufacturing method thereof | |
| US11581374B2 (en) | Display substrate and method of manufacturing the same, display device | |
| US11653529B2 (en) | Display substrate comprising fingerprint recognition sensors, method for manufacturing the same, and display device | |
| US11538848B2 (en) | Fingerprint identification substrate and manufacturing method therefor, identification method and display apparatus | |
| TW201704776A (en) | Biometric device and method and wearable carrier | |
| CN107092897B (en) | Display panel and display device | |
| CN108630731B (en) | Display panel, manufacturing method of display panel and display device | |
| US11972629B2 (en) | Texture recognition apparatus and electronic apparatus | |
| CN207409492U (en) | Display panel and display device | |
| US12035605B2 (en) | Texture recognition apparatus and manufacturing method thereof | |
| CN109407902A (en) | Sensing device and a kind of method for sensing | |
| WO2021258941A1 (en) | Texture recognition apparatus and electronic apparatus | |
| CN117098697A (en) | Vehicle control device and vehicle | |
| CN206819316U (en) | Touch module with fingerprint identification device | |
| CN113169245A (en) | Fingerprint identification sensor, display substrate, display device and fingerprint identification method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |