CN109148654A - III group-III nitride epitaxial structure of non-polar plane and preparation method thereof - Google Patents
III group-III nitride epitaxial structure of non-polar plane and preparation method thereof Download PDFInfo
- Publication number
- CN109148654A CN109148654A CN201811003470.8A CN201811003470A CN109148654A CN 109148654 A CN109148654 A CN 109148654A CN 201811003470 A CN201811003470 A CN 201811003470A CN 109148654 A CN109148654 A CN 109148654A
- Authority
- CN
- China
- Prior art keywords
- polar plane
- iii nitride
- iii
- layer
- iii group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 161
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000407 epitaxy Methods 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000006911 nucleation Effects 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000026267 regulation of growth Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910016420 Ala Inb Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 31
- 229910002601 GaN Inorganic materials 0.000 description 20
- 239000007789 gas Substances 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- -1 alkyl compound Chemical class 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000029936 alkylation Effects 0.000 description 1
- 238000005804 alkylation reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention discloses a kind of III group-III nitride epitaxial structures of non-polar plane, multiple secondary epitaxy column structures including substrate and epitaxial growth being spaced apart from each other on the non-polar plane of the substrate, the secondary epitaxy column structure includes the nucleating layer being sequentially overlapped along the non-polar plane direction perpendicular to the substrate, first non-polar plane, III group iii nitride layer, III group iii nitride layer of mask layer and the second non-polar plane, the epitaxial growth surface of first non-polar plane, III group iii nitride layer and III group iii nitride layer of the second non-polar plane is the non-polar plane of III group-III nitride.The invention also discloses a kind of preparation methods of III group-III nitride epitaxial structure of non-polar plane.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of III group-III nitride epitaxial structure of non-polar plane and its
Preparation method.
Background technique
Efficient light emitting diode is being prepared with III hi-nitride semiconductor material that gallium nitride (GaN) is representative
(LED) aspect has great practical value.Currently, the universal extension of gallium nitride (GaN) is in (001) surface sapphire substrate, however,
Biggish lattice mismatch makes gallium nitride (GaN) material by more serious inside between Sapphire Substrate and gallium nitride (GaN)
Stress generates biggish piezoelectric field.Further, since the special crystal structure (wurtzite structure) of gallium nitride (GaN), itself by
To certain spontaneous polarization effect.The collective effect of the two can cause more powerful built in field, substantially reduce electronics and sky
The combined efficiency in cave reduces the luminous efficiency of LED.
A kind of effective solution to the problems described above is extension nonpolar or semipolar gallium nitride (GaN).It is wherein most common
Be in the sapphire of hexagonal system structureIt is non-polar plane that epitaxial surface is grown on the face rThe nitrogen in face
Change gallium.However, causing gallium nitride due to having very big lattice mismatch between non-polar plane gallium nitride (GaN) and sapphire
(GaN) crystal quality is very undesirable, seriously affects the luminous efficiency of LED.Therefore, it improves non-polar plane gallium nitride (GaN)
Crystal quality is the key that improve LED luminous efficiency.
Summary of the invention
Based on this, it is necessary to for quality problems caused by nonpolar III group-III nitride epitaxial structure lattice mismatch, provide
A kind of III group-III nitride epitaxial structure of non-polar plane and preparation method thereof.
A kind of III group-III nitride epitaxial structure of non-polar plane, including substrate and epitaxial growth the substrate nonpolarity
The multiple secondary epitaxy column structures being spaced apart from each other on face, the secondary epitaxy column structure include along perpendicular to the substrate
The non-polar plane direction nucleating layer, III group iii nitride layer of the first non-polar plane, the mask layer and second non-that are sequentially overlapped
III group iii nitride layer of polar surface, III group iii nitride layer of the first non-polar plane and III group iii nitride layer of the second non-polar plane
Epitaxial growth surface be III group-III nitride non-polar plane.
The material of the substrate includes sapphire, silicon, silicon carbide, zinc oxide and III race in one of the embodiments,
At least one of nitride.
The material of the nucleating layer includes Al in one of the embodiments,aInbGa1-a-bN, wherein 0≤a≤1,0≤b
≤ 1 and 0≤1-a-b≤1.
In one of the embodiments, the nucleating layer with a thickness of 30nm~300nm.
The trans D of the secondary epitaxy column structure is 100nm~900nm in one of the embodiments,.
The coverage rate of the multiple column construction over the substrate is 30%~80% in one of the embodiments,.
The material of III group iii nitride layer of the first non-polar plane includes Al in one of the embodiments,xInyGa1-x- yN, wherein 0≤x≤1,0≤y≤1 and 0≤1-x-y≤1, the material of III group iii nitride layer of the first non-polar plane is six sides
Crystal structure, the non-polar plane of III group iii nitride layer of the first non-polar plane are the hexagonal crystal systemFace.
In one of the embodiments, III group iii nitride layer of the first non-polar plane with a thickness of 1 μm -6 μm.
The material of the mask layer includes one of silicon, silica and silicon nitride in one of the embodiments,.
In one of the embodiments, the mask layer with a thickness of 50nm~350nm.
The material of III group iii nitride layer of the second non-polar plane includes Al in one of the embodiments,x’Iny’
Ga1-x’-y’N, wherein 0≤x '≤1,0≤y '≤1 and 0≤1-x '-y '≤1, III group iii nitride layer of the second non-polar plane
Material is hexagonal system structure, and the non-polar plane of III group iii nitride layer of the second non-polar plane is the hexagonal crystal systemFace.
A kind of preparation method of III group-III nitride epitaxial structure of non-polar plane, comprising the following steps:
The epitaxial growth of nucleation layers on the non-polar plane of substrate；
III group iii nitride layer of the first non-polar plane of epitaxial growth on the nucleating layer；
The mask layer of cover graphics on III group iii nitride layer of the first non-polar plane；
It is etched down to the substrate by the patterned mask layer, forms the multiple extension columns being spaced apart from each other
Shape structure；And
In III group iii nitride layer of the second non-polar plane of surface epitaxial growth of the patterned mask layer, obtain each other
Every multiple secondary epitaxy column structures.
In one of the embodiments, by molecular beam epitaxy or Metalorganic Chemical Vapor Deposition grow it is described at
Stratum nucleare.
III race of the first non-polar plane is grown by Metalorganic Chemical Vapor Deposition in one of the embodiments,
Nitride layer.
The step of mask layer of the cover graphics includes: in one of the embodiments,
The deposition mask layer on III group iii nitride layer of the first non-polar plane；
Photoresist layer is coated on the mask layer；
Photoetching development is carried out to the photoresist layer and forms patterned photoresist layer；And
The mask layer is performed etching by the patterned photoresist layer, obtains the patterned mask layer.
The downward lithographic method is sense coupling method in one of the embodiments,.
It is nitrogenized in one of the embodiments, by two non-polar plane of Metalorganic Chemical Vapor Deposition growth regulation, III race
Nitride layer.
The present invention forms the column structure at multiple intervals on the non-polar plane of substrate, the nucleating layer of the column structure,
First non-polar plane, III group iii nitride layer and mask layer are sequentially overlapped to form an extension column structure, two on the mask layer
Secondary extension is superimposed two non-polar plane of growth regulation, III group iii nitride layer, forms secondary epitaxy column structure.Due to column structure at
The extension column structure that stratum nucleare, III group iii nitride layer of the first non-polar plane and mask layer are formed has high area volume
Than it is non-to can reduce first for secondary epitaxy growth III group iii nitride layer of the second non-polar plane on an extension column structure
III group iii nitride layer of polar surface is penetrated into the dislocation density at the top of an extension column structure, prevents III race's nitrogen of the first non-polar plane
The lattice defect of compound layer extends to III group iii nitride layer of the second non-polar plane.The multiple secondary epitaxy column structure is described
It is spaced apart from each other on substrate, makes the side exposure of the secondary epitaxy column structure, further increase the area of the column structure
Volume ratio.The mask layer is by III group iii nitride layer of the first non-polar plane and III group iii nitride layer of the second non-polar plane
Isolation, avoids the lattice mismatch of III group iii nitride layer of the first non-polar plane and substrate from extending to second non-polar plane III
Group iii nitride layer reduces the lattice mismatch rate of III group iii nitride layer of the second non-polar plane, improves III race of non-polar plane
The crystal quality of nitride epitaxial structure.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the III group-III nitride epitaxial structure of non-polar plane of one embodiment of the invention；
Fig. 2 is the structural representation of the III group-III nitride epitaxial structure of the first non-polar plane before one embodiment of the invention does not etch
Figure；
Fig. 3 is the structural representation of the III group-III nitride epitaxial structure of the first non-polar plane when one embodiment of the invention does not etch
Figure；
Fig. 4 is the structural schematic diagram of the mask plate of one embodiment of the invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, by the following examples, it and combines attached
Figure, is further elaborated III group-III nitride epitaxial structure of non-polar plane and preparation method thereof of the invention.It should manage
Solution, described herein specific examples are only used to explain the present invention, is not intended to limit the present invention.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.On the contrary, when element is referred to as " directly existing " another element "upper",
There is no intermediary elements.Term as used herein "vertical", "horizontal", "left" and "right" and similar statement are
For illustrative purposes.Various difference objects are in the ratio drafting convenient for enumerating explanation in embodiment attached drawing, rather than press practical group
The ratio of part is drawn.
Referring to Fig. 1, the embodiment of the present invention provide a kind of III group-III nitride epitaxial structure of non-polar plane, including substrate 1 with
And the multiple secondary epitaxy column structures that are spaced apart from each other of the epitaxial growth on the non-polar plane of the substrate 1, it is described secondary outer
Prolonging column structure includes the nucleating layer 2 being sequentially overlapped along the non-polar plane of the substrate, the nitridation of III race of the first non-polar plane
III group iii nitride layer 7 of nitride layer 3, mask layer 4 and the second non-polar plane, III group iii nitride layer 3 of the first non-polar plane and institute
The epitaxial growth surface for stating III group iii nitride layer 7 of the second non-polar plane is the non-polar plane of III group-III nitride.
The embodiment of the present invention forms the secondary epitaxy column structure at multiple intervals on the non-polar plane of substrate 1, it is described at
Stratum nucleare 2, III group iii nitride layer 3 of the first non-polar plane and mask layer 4 are sequentially overlapped to form an extension column structure, cover described
Secondary epitaxy superposition two non-polar plane of growth regulation, III group iii nitride layer 7 forms secondary epitaxy column structure in film layer 4, due to primary
Nucleating layer 2, III group iii nitride layer 3 of the first non-polar plane and the mask layer 4 of extension column structure have high area-volume ratio,
Secondary epitaxy, which grows III group iii nitride layer 7 of the second non-polar plane, on extension column structure can reduce the first nonpolarity
III group iii nitride layer 3 of face is penetrated into the dislocation density at the top of an extension column structure, prevents III race of the first non-polar plane from nitrogenizing
The lattice defect of nitride layer 3 extends to III group iii nitride layer 7 of the second non-polar plane.The multiple secondary epitaxy column structure is described
It is spaced apart from each other on substrate 1, makes the side exposure of the secondary epitaxy column structure, further increase the secondary epitaxy column knot
The area-volume ratio of structure.The mask layer 4 is by III group iii nitride layer 3 of the first non-polar plane and second non-polar plane III
Group iii nitride layer 7 is isolated, and avoids the lattice mismatch of III group iii nitride layer 3 of the first non-polar plane and substrate 1 from extending to described
Second non-polar plane, III group iii nitride layer 7 reduces the lattice mismatch rate of III group iii nitride layer 7 of the second non-polar plane, improves
The crystal quality of the III group-III nitride epitaxial structure of non-polar plane.
The epitaxial growth surface of the gallium nitride of hexagonal crystal system is usually (0001) face, due to (0001) of hexagonal crystal system
There is spontaneous polarization electric field on face, the presence of polarized electric field will lead to electrons and holes in the direction of growth (namely electric current pass
Defeated direction) be spatially separating, to reduce luminous efficiency.The epitaxial growth surface of III group iii nitride layer of the invention is nonpolarity
Face is grown along the non-polar plane so that polarized electric field direction and building chip to vertical, and electrons and holes are in the direction of growth
It is spatially separating minimum, so as to improve the radiation recombination efficiency of carrier, improves semiconductor light emitting efficiency.
In one embodiment, the material of the substrate 1 can be sapphire, silicon, silicon carbide, zinc oxide and the nitridation of III race
Object, the surface of the substrate 1 are non-polar plane.For example, the sapphire non-polar plane isThe face r.
In one embodiment, the material of the nucleating layer 2 can be expressed as AlaInbGa1-a-bN, wherein 0≤a≤1,0≤b
≤ 1 and 0≤1-a-b≤1.The nucleating layer 2 makes III group iii nitride layer 3 of the first non-polar plane for providing nucleation site
It can grow.In one embodiment, the material of the nucleating layer 2 can be AlN wafer, InN wafer, GaN wafer and described
The ternary or quaternary doped and compounded object that Al, In or Ga and N are formed.In one embodiment, the nucleating layer 2 with a thickness of 30nm~
300nm.In the thickness range, the nucleating layer 2 has higher nucleating effect and better extension capability.
In one embodiment, the side of the multiple secondary epitaxy column structure can be round, rectangular, triangle etc..
It is preferably circular, so that the secondary epitaxy column structure formed on the nucleating layer 2 is cylinder.Preferably, the multiple
Arrangement of the secondary epitaxy column structure on the substrate 1 is in certain regularity, advantageously ensures that the secondary epitaxy to be formed
The consistency of column structure.
In one embodiment, the multiple secondary epitaxy column structure is in the coverage rate of the non-polar plane of the substrate 1
30%~80%.In the range, the utilization rate of the substrate 1 is higher, formed the multiple secondary epitaxy column structure it
Between will not influence each other, be conducive to the quality for improving the III group-III nitride epitaxial structure of non-polar plane.The secondary epitaxy column
The lateral dimension of shape structure is micron order or nanoscale, preferably 100nm~900nm.
In one embodiment, the material of III group iii nitride layer 3 of the first non-polar plane includes AlxInyGa1-x-yN, wherein
0≤x≤1,0≤y≤1 and 0≤1-x-y≤1.In one embodiment, the material of III group iii nitride layer 3 of the first non-polar plane
Can for AlN wafer, InN wafer, GaN wafer and described Al, In or Ga and N formation grow along non-polar plane ternary or
Quaternary doped and compounded object.The material of first non-polar plane, III group iii nitride layer 3 is hexagonal system structure, the first non-pole
Property face III group iii nitride layer 3 non-polar plane can be the hexagonal crystal systemFace.First non-polar plane III
The growth interface of group iii nitride layer 3 is non-polar plane, and band curvature and the wavelength caused by inclination for being able to suppress hetero-junctions are inclined
It moves, the semiconductor device for forming the III group-III nitride epitaxial structure of polar surface obtains stable wavelength, described in raising
The luminous efficiency of semiconductor devices.In one embodiment, III group iii nitride layer 3 of the first non-polar plane with a thickness of 1 μm of -6 μ
m.In the thickness range, keep the combined efficiency of electrons and holes higher, improves the performance of the semiconductor devices.
In one embodiment, the material of the mask layer 4 includes one of silicon, silica and silicon nitride.It is described to cover
Film layer 4 can prevent dislocation from extending along the direction of the epitaxial surface of vertical first non-polar plane, III group iii nitride layer 3, improve
The crystal quality of second non-polar plane, III group iii nitride layer 7.
In one embodiment, the mask layer 4 with a thickness of 50nm~350nm.The mask layer 4 and the first non-pole
The thickness of III group iii nitride layer 3 of property face matches, and guarantees that the lattice mismatch is as small as possible and extends to the non-polar plane III
On group iii nitride layer.
In one embodiment, the material of III group iii nitride layer 7 of the second non-polar plane includes Alx’Iny’Ga1-x’-y’N,
In 0≤x '≤1,0≤y '≤1 and 0≤1-x '-y '≤1.In one embodiment, III group iii nitride layer 3 of the first non-polar plane
Material can be AlN wafer, InN wafer, GaN wafer and described Al, In or Ga and N formation grow along non-polar plane
Ternary or quaternary doped and compounded object.The material of second non-polar plane, III group iii nitride layer 7 is hexagonal system structure, described the
The non-polar plane of two non-polar planes, III group iii nitride layer 7 can be the hexagonal crystal systemFace.The second non-pole
The material of III group iii nitride layer 7 of property face and the material of III group iii nitride layer 3 of the first non-polar plane can be identical or different.It is excellent
Choosing, the material of the material of III group iii nitride layer 7 of the second non-polar plane and III group iii nitride layer 3 of the first non-polar plane
It is identical, the lattice mismatch rate of III group iii nitride layer 7 of the second non-polar plane is advantageously reduced, second non-polar plane is improved
The crystal quality of III group iii nitride layer 7.The growth thickness of two non-polar planes, III group iii nitride layer can according to need progress
Adjustment.
The embodiment of the present invention also provides a kind of preparation method of III group-III nitride epitaxial structure of non-polar plane, including following step
It is rapid:
S10, the epitaxial growth of nucleation layers 2 on the non-polar plane of substrate 1；
S20, III group iii nitride layer 3 of the first non-polar plane of epitaxial growth on the nucleating layer 2；
S30, the mask layer 4 of cover graphics on III group iii nitride layer 3 of the first non-polar plane；
S40 is etched down to the substrate 1 by the patterned mask layer 4, formed be spaced apart from each other it is multiple primary
Extension column structure；And
S50 is obtained in III group iii nitride layer 7 of the second non-polar plane of surface epitaxial growth of the patterned mask layer 4
The multiple secondary epitaxy column structures being spaced apart from each other.7.
Preparation method of the present invention by being performed etching to III group iii nitride layer 3 of the first non-polar plane and nucleating layer 2,
The extension column knot that nucleating layer 2, III group iii nitride layer 3 of the first non-polar plane and mask layer 4 are superimposed is formed on the substrate 1
Structure, the etching depth extend to the substrate 1, make the side exposure of an extension column structure, make described primary outer
Prolong column structure with high area volume ratio, the lattice mismatch for reducing by III group iii nitride layer of the first non-polar plane is penetrated into one
Dislocation density at the top of secondary extension column structure.The continued growth on the mask layer 4 at the top of an extension column structure
Second non-polar plane, III group iii nitride layer 7, the mask layer 4 can prevent III group iii nitride layer of the first non-polar plane
The dislocation of 3 penetration types extends in the vertical direction III group iii nitride layer 7 of the second non-polar plane, and the preparation method is conducive to
The lattice mismatch rate for reducing by III group-III nitride epitaxial structure of non-polar plane, improves the III group-III nitride epitaxial structure of non-polar plane
Crystal quality.
It may include the pre-treatment step to the substrate 1 before step S10, the pretreatment is for making the substrate 1
High quality status is kept, provides good basis for the growth of epitaxial structure.In one embodiment, the pretreatment of the substrate 1
Step may include polishing, cleaning and annealing.The polishing treatment may include with cutting tools such as diamonds described
It cuts to form non-polar plane in 1 surface of substrate.The cleaning treatment may include deionized water cleaning and organic solvent cleaning.It is described
Deionized water cleaning can be ultrasonic cleaning -8 minutes 2 minutes at room temperature, and the pickup particle on low surface is taken advantage of described in removal.It is described
It may include organic solvent cleaning after deionized water cleaning, the organic solvent cleaning may include with organic solvent, such as salt
Acid, the third intoxicated, ethanol washing, remove the organic matter on 1 surface of substrate.The annealing may include in 800 DEG C of temperature-
At 1200 DEG C, the substrate 1 is purged with the high pure nitrogen of given pace or high-purity hydrogen, so that the substrate 1 obtains atom level
Even curface.The purge rates can be 3L/min-8L/min, and the annealing time can be -3 hours 1 hour.
In step slo, the method for nucleating layer 2 described in the epitaxial growth can be molecular beam epitaxy (MBE) or gold
Belong to organic chemical vapor deposition method (MOCVD).The MBE method is in the case where the order of magnitude is ultrahigh vacuum by slow falling long-pending evaporation coating
A kind of method.The step of MBE method growth nucleating layer 2 may include that heating is placed in molecular beam epitaxy reaction cavity
In the substrate 1 and the line of 2 material of nucleating layer or contained element is formed simultaneously in molecular beam epitaxy reaction cavity,
To which the non-polar plane in the substrate 1 forms the nucleating layer 2.In one embodiment, the nucleating layer 2 is aluminium nitride
When, the line can be the line of nitrogen and aluminium.The Metallo-Organic Chemical Vapor deposition may include by III race's element
Hydride etc. is used as crystal growth source material, forms the nucleation in the enterprising promoting the circulation of qi phase epitaxy of substrate 1 in a manner of pyrolysis
Layer 2.In one embodiment, the step of nucleating layer 2 is gallium nitride layer, and the mocvd method grows nucleating layer 2 can wrap
It includes under the atmosphere of ammonia, is passed through the alkyl compound of the galliums such as trimethyl gallium or triethyl-gallium, form the gallium nitride nucleating layer
2.The growth temperature of the nucleating layer 2 can be 1000 DEG C -1200 DEG C.
In step S20, growing III group iii nitride layer 3 of the first non-polar plane may include Metallo-Organic Chemical Vapor
Sedimentation (MOCVD).In one embodiment, the material of III group iii nitride layer 3 of the first non-polar plane includes AlxInyGa1-x- yN, the growing method may include being passed through the alkylation of the alkyl compound, aluminium of gallium by a certain percentage under the atmosphere of ammonia
The alkyl compound for closing object and indium, along the non-polar planeFace direction grows the AlxInyGa1-x-yN layers.Described
The growth temperature of one non-polar plane, III group iii nitride layer 3 can be 1000 DEG C -1200 DEG C.
Please refer to Fig. 2 and Fig. 3, in step s 30, formed patterned mask layer 4 the step of may include: S32,
The deposition mask layer 4 on III group iii nitride layer 3 of the first non-polar plane；S34 coats photoresist layer on the mask layer 4
5；S36 carries out photoetching development to the photoresist layer 5 and forms patterned photoresist layer 5；And S38, by described graphical
Photoresist layer 5 mask layer 4 is performed etching, obtain the patterned mask layer 4.
In one embodiment, the method for the step S32 deposition mask layer 4 may include the gas of plasma enhanced chemical
Phase sedimentation (PECVD).The step of PECVD deposition mask layer 4 may include making to contain by microwave or radio frequency etc.
There is the gas ionization of 4 composed atom of mask layer, is being partially formed plasma, the plasma, which reacts, deposits shape
At the mask layer 4.In one embodiment, the step of 4 silica of mask layer, cvd silicon oxide mask layer 4, can be with
Gaseous plasma including forming oxygen atom and silicon atom with microwave or radio frequency etc., oxygen plasma and silicon plasma are in institute
It states deposition on III group iii nitride layer 3 of the first non-polar plane and forms the silicon oxide masking film layer 4.The depositing temperature of the mask layer 4
It can be 200 DEG C -350 DEG C.
In one embodiment, the step of step S34 coating photoresist layer 5 can be to be incited somebody to action with sol evenning machine with certain revolving speed
Photoresist is coated in the surface of the mask layer 4.The revolving speed can be 3000rpm-5000rpm.
In one embodiment, the photoetching development of the step S36 can make to be arranged mask plate 6 on photoresist layer 5
There is light shield layer mask plate 6 with parallel ultraviolet irradiation, is changed by 5 property of the photoresist of the ultraviolet light, Ke Yirong
In developer solution, the region blocked by the light shield layer is described not by 5 property of the photoresist layer of ultraviolet light not by ultraviolet light
Matter does not change, therefore does not dissolve in developer solution, to be transferred to the photoresist with making the pattern 1:1 on the mask plate 6
On layer 5.In one embodiment, the wavelength of the ultraviolet light can be 150nm-400nm.
Referring to Fig. 4, the mask plate 6 may include substrate 601 and light non-transmittable layers 602, the light non-transmittable layers 602 are can
To be plated in 601 surface of substrate by the method sputtered, the thickness of the light non-transmittable layers 602 can be 0.05 μm -0.15 μm.
The light non-transmittable layers 602 could be formed with several light tight regions being spaced apart from each other, the opaque area on the substrate 601
Overseas region can be such that light penetrates.The light tight region can be round, rectangular, triangle and irregular figure etc..It is excellent
Choosing, the rounded array distribution of light tight region is on the substrate 601.
In step S38, the lithographic method of the mask layer 4 may include dry etching.The etching of the dry etching
Gas may include CHF3And SF6。CHF3And SF6Occur with the etching surface for the mask layer 4 for not being photo-etched the covering of glue-line 5
Reaction, the mask layer 4 for being exposed to the patterned photoresist layer 5 is removed, and is formed and the graphical photoresist layer 5
The identical patterned mask layer 4 of pattern.
In the step S40, the etching of III group iii nitride layer 3 of the first non-polar plane and the nucleating layer 2 can be with
For inductively coupled plasma dry etching (ICP).The inductively coupled plasma dry etching is to be passed through etching gas to make
It is decomposed with inductance coupled plasma glow discharge, generation has the active plasma of extensive chemical, in adding for electric field
Speed effect is moved to sample surfaces, to the etching surface of the first non-polar plane III group iii nitride layer 3 and the nucleating layer 2
Not only it carries out chemical reaction and generates escaping gas, but also have certain physical etchings effect.In one embodiment, the described first non-pole
The etching gas Cl of property face III group iii nitride layer 3 and the nucleating layer 22And Ar, the etching power are 50w-150w, the quarter
Losing the time is -20 minutes 5 minutes.
It is etched to the substrate 1 along the mask layer 4, is etched away completely described between the secondary epitaxy column structure
Nucleating layer 2, can guarantee to be etched in the gap to be formed does not have to grow the basis of III group iii nitride layer of non-polar plane,
Guarantee that III group iii nitride layer 7 of the second non-polar plane is only grown on the mask layer 4 of an extension column structure, favorably
In the quality for improving III group iii nitride layer of the non-polar plane that secondary epitaxy is formed.
In step s 50, in the second nonpolarity of surface epitaxial growth not performing etching, being covered with the mask layer 4
III group iii nitride layer 7 of face.Second non-polar plane, III group iii nitride layer 7 and III group iii nitride layer 3 of the first non-polar plane
Growing method and growth conditions can be identical, which is not described herein again.
Embodiment 1
Existed using MOCVDGrowing aluminum nitride (AlN) nucleating layer 2 in r surface sapphire substrate 1, the AlN nucleation
Layer 2 with a thickness of 150nm；
Utilize MOCVD epitaxial growth on the AlN nucleating layer 2First non-polar plane of non-polar plane nitrogenizes
Aluminium layer (III group iii nitride layer 3 of the first non-polar plane), the first non-polar plane aln layer with a thickness of 3.5mm；
The SiO of 300nm is grown in the first non-polar plane aln layer using PECVD2Mask layer 4, the SiO2Exposure mask
Layer 4 with a thickness of 80nm；
Photoresist is coated uniformly on the SiO under the revolving speed of 4000rpm using sol evenning machine2Light is formed on mask layer 4
Photoresist layer 5；
Mask plate is arranged and is irradiated on photoresist layer 5, and with ultraviolet light, will be gone by the photoresist of ultraviolet light
It removes, the ultraviolet range is 280nm-190nm；
To the SiO exposed2Mask layer carries out dry etching, etching gas CHF3And SF6, until being etched to described the
One non-polar plane aln layer；
The first non-polar plane aln layer and the AlN nucleating layer 2 are performed etching using ICP, the etching gas
Body is Cl2And Ar, etching power are 100w, etch period is 10 minutes, obtains micro-nano column array；
Using MOCVD the micro-nano column array top SiO2Extension is carried out on mask layer 4Non-polar plane
Gallium nitride layer (III group iii nitride layer 7 of the second non-polar plane).
Embodiment 2
Existed using MBEGrowing gallium nitride nucleating layer 2 in r surface sapphire substrate 1, the gallium nitride nucleating layer 2
With a thickness of 40nm；
Utilize MOCVD epitaxial growth on the gallium nitride nucleating layer 2First non-polar plane of non-polar plane
Gallium nitride layer (III group iii nitride layer 3 of the first non-polar plane), the non-polar plane gallium nitride layer with a thickness of 4mm；
The SiO of 300nm is grown in the first non-polar plane gallium nitride layer using PECVD2Mask layer 4, the SiO2Exposure mask
Layer 4 with a thickness of 90nm；
Photoresist is coated uniformly on the SiO under the revolving speed of 4000rpm using sol evenning machine2Light is formed on mask layer 4
Photoresist layer 5；
Mask plate is arranged and is irradiated on photoresist layer 5, and with ultraviolet light, will be gone by the photoresist of ultraviolet light
It removes, the ultraviolet range is 400nm-315nm；
To the SiO exposed2Mask layer carries out dry etching, etching gas CHF3And SF6, until being etched to described the
One non-polar plane gallium nitride layer；
The first non-polar plane gallium nitride layer and the gallium nitride nucleating layer 2 are performed etching using electric ICP, the quarter
Erosion gas is Cl2And Ar, etching power are 100w, etch period is 10 minutes, obtains micro-nano column array；
Using MOCVD the micro-nano column array top SiO2Extension is carried out on mask layer 4Non-polar plane
Aln layer (III group iii nitride layer 7 of the second non-polar plane).
Embodiment 3
Existed using MOCVDGrowing aluminum nitride (AlN) nucleating layer 2 in r surface sapphire substrate 1, the AlN nucleation
Layer 2 with a thickness of 300nm；
Utilize MOCVD epitaxial growth on the AlN nucleating layer 2First non-polar plane of non-polar plane nitrogenizes
Gallium layer (III group iii nitride layer 3 of the first non-polar plane), the first non-polar plane gallium nitride layer with a thickness of 4.5mm；
The SiO of 300nm is grown in the first non-polar plane gallium nitride layer using PECVD2Mask layer 4, the SiO2Exposure mask
Layer 4 with a thickness of 100nm；
Photoresist is coated uniformly on the SiO under the revolving speed of 4000rpm using sol evenning machine2Light is formed on mask layer 4
Photoresist layer 5；
Mask plate is arranged and is irradiated on photoresist layer 5, and with ultraviolet light, will be gone by the photoresist of ultraviolet light
It removes, the ultraviolet range is 315nm-280nm；
To the SiO exposed2Mask layer carries out dry etching, etching gas CHF3And SF6, until being etched to described the
One non-polar plane gallium nitride layer；
The first non-polar plane gallium nitride layer and the AlN nucleating layer are performed etching using ICP, the etching gas
For Cl2And Ar, etching power are 100w, etch period is 10 minutes, obtains micro-nano column array；
Using MOCVD the micro-nano column array top SiO2Extension is carried out on mask layer 4Non-polar plane
Gallium nitride (III group iii nitride layer 7 of the second non-polar plane).
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (17)
1. a kind of III group-III nitride epitaxial structure of non-polar plane, which is characterized in that including substrate and epitaxial growth in the lining
The multiple secondary epitaxy column structures being spaced apart from each other on the non-polar plane at bottom, the secondary epitaxy column structure includes along vertical
In nucleating layer, III group iii nitride layer of the first non-polar plane, mask layer that the non-polar plane direction of the substrate is sequentially overlapped
And III group iii nitride layer of the second non-polar plane, III group iii nitride layer of the first non-polar plane and second non-polar plane III
The epitaxial growth surface of group iii nitride layer is the non-polar plane of III group-III nitride.
2. nonpolar III group-III nitride epitaxial structure according to claim 1, which is characterized in that the material packet of the substrate
Include at least one of sapphire, silicon, silicon carbide, zinc oxide and III group-III nitride.
3. nonpolar III group-III nitride epitaxial structure according to claim 1, which is characterized in that the material of the nucleating layer
Including AlaInbGa1-a-bN, wherein 0≤a≤1,0≤b≤1 and 0≤1-a-b≤1.
4. nonpolar III group-III nitride epitaxial structure according to claim 1, which is characterized in that the thickness of the nucleating layer
For 30nm~300nm.
5. nonpolar III group-III nitride epitaxial structure according to claim 1, which is characterized in that the secondary epitaxy column
The trans D of structure is 100nm~900nm.
6. nonpolar III group-III nitride epitaxial structure according to claim 1, which is characterized in that the multiple column construction
Coverage rate over the substrate is 30%~80%.
7. III group-III nitride epitaxial structure of non-polar plane according to claim 1, which is characterized in that first nonpolarity
The material of III group iii nitride layer of face includes AlxInyGa1-x-yN, wherein 0≤x≤1,0≤y≤1 and 0≤1-x-y≤1, described
The material of one non-polar plane, III group iii nitride layer is hexagonal system structure, the non-pole of III group iii nitride layer of the first non-polar plane
Property face be the hexagonal crystal systemFace.
8. III group-III nitride epitaxial structure of non-polar plane according to claim 1, which is characterized in that first nonpolarity
III group iii nitride layer of face with a thickness of 1 μm -6 μm.
9. III group-III nitride epitaxial structure of non-polar plane according to claim 1, which is characterized in that the material of the mask layer
Material includes one of silicon, silica and silicon nitride.
10. III group-III nitride epitaxial structure of non-polar plane according to claim 1, which is characterized in that the mask layer
With a thickness of 50nm~350nm.
11. III group-III nitride epitaxial structure of non-polar plane according to claim 1, which is characterized in that the second non-pole
The material of III group iii nitride layer of property face includes Alx’Iny’Ga1-x’-y’N, wherein 0≤x '≤1,0≤y '≤1 and 0≤1-x '-y '≤
1, the material of III group iii nitride layer of the second non-polar plane is hexagonal system structure, III group-III nitride of the second non-polar plane
The non-polar plane of layer is the hexagonal crystal systemFace.
12. a kind of preparation method of III group-III nitride epitaxial structure of non-polar plane, comprising the following steps:
The epitaxial growth of nucleation layers on the non-polar plane of substrate；
III group iii nitride layer of the first non-polar plane of epitaxial growth on the nucleating layer；
The mask layer of cover graphics on III group iii nitride layer of the first non-polar plane；
It is etched down to the substrate by the patterned mask layer, forms the multiple extension column knots being spaced apart from each other
Structure；And
In III group iii nitride layer of the second non-polar plane of surface epitaxial growth of the patterned mask layer, it is spaced apart from each other
Multiple secondary epitaxy column structures.
13. the preparation method of III group-III nitride epitaxial structure of non-polar plane according to claim 12, which is characterized in that logical
It crosses molecular beam epitaxy or Metalorganic Chemical Vapor Deposition grows the nucleating layer.
14. the preparation method of III group-III nitride epitaxial structure of non-polar plane according to claim 12, which is characterized in that logical
It crosses Metalorganic Chemical Vapor Deposition and grows III group iii nitride layer of the first non-polar plane.
15. the preparation method of III group-III nitride epitaxial structure of non-polar plane according to claim 12, which is characterized in that institute
The step of stating the mask layer of cover graphics include:
The deposition mask layer on III group iii nitride layer of the first non-polar plane；
Photoresist layer is coated on the mask layer；
Photoetching development is carried out to the photoresist layer and forms patterned photoresist layer；And
The mask layer is performed etching by the patterned photoresist layer, obtains the patterned mask layer.
16. the preparation method of III group-III nitride epitaxial structure of non-polar plane according to claim 12, which is characterized in that institute
Stating downward lithographic method is sense coupling method.
17. the preparation method of III group-III nitride epitaxial structure of non-polar plane according to claim 12, which is characterized in that logical
Cross two non-polar plane of Metalorganic Chemical Vapor Deposition growth regulation, III group iii nitride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811003470.8A CN109148654B (en) | 2018-08-30 | 2018-08-30 | Non-polar plane III-group nitride epitaxial structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811003470.8A CN109148654B (en) | 2018-08-30 | 2018-08-30 | Non-polar plane III-group nitride epitaxial structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109148654A true CN109148654A (en) | 2019-01-04 |
| CN109148654B CN109148654B (en) | 2020-04-07 |
Family
ID=64829513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811003470.8A Active CN109148654B (en) | 2018-08-30 | 2018-08-30 | Non-polar plane III-group nitride epitaxial structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109148654B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110517949A (en) * | 2019-07-29 | 2019-11-29 | 太原理工大学 | It is a kind of to utilize SiO2Method as the substrate preparation nonpolarity face a GaN epitaxial layer |
| CN112071741A (en) * | 2020-08-13 | 2020-12-11 | 深圳市奥谱太赫兹技术研究院 | III-group nitride layer structure, preparation method thereof and transistor |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090169828A1 (en) * | 2006-03-10 | 2009-07-02 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWTH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
| CN101740672A (en) * | 2008-11-20 | 2010-06-16 | 晶元光电股份有限公司 | Photoelectric element, back light module device and illuminating device |
| CN102598317A (en) * | 2009-10-16 | 2012-07-18 | 首尔Opto仪器股份有限公司 | High-quality nonpolar or semipolar semiconductor device on porous nitride semiconductor and fabrication method thereof |
| TW201535774A (en) * | 2014-03-11 | 2015-09-16 | Univ Nat Taiwan | Semiconductor light-emitting device and manufacturing method thereof |
| US20150325743A1 (en) * | 2009-11-30 | 2015-11-12 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency broadband semiconductor nanowire devices |
| CN105765741A (en) * | 2013-10-31 | 2016-07-13 | 三星电子株式会社 | Nano-structure semiconductor light emitting device |
| CN106373866A (en) * | 2016-09-22 | 2017-02-01 | 东莞市联洲知识产权运营管理有限公司 | Fabrication method of large-size silicon-based GaAs substrate |
| CN106374023A (en) * | 2016-10-31 | 2017-02-01 | 华南理工大学 | Nonpolar nanorod LED grown on lithium gallate substrate, and preparation method for nonpolar nanorod LED |
| CN106384763A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | Non-polar InGaN/GaN multi-quantum-well nano-pillar and preparation method thereof |
| US20170170363A1 (en) * | 2015-12-14 | 2017-06-15 | Ostendo Technologies, Inc. | Methods for Producing Composite GaN Nanocolumns and Light Emitting Structures Made from the Methods |
-
2018
- 2018-08-30 CN CN201811003470.8A patent/CN109148654B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090169828A1 (en) * | 2006-03-10 | 2009-07-02 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWTH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
| CN101740672A (en) * | 2008-11-20 | 2010-06-16 | 晶元光电股份有限公司 | Photoelectric element, back light module device and illuminating device |
| CN102598317A (en) * | 2009-10-16 | 2012-07-18 | 首尔Opto仪器股份有限公司 | High-quality nonpolar or semipolar semiconductor device on porous nitride semiconductor and fabrication method thereof |
| US20150325743A1 (en) * | 2009-11-30 | 2015-11-12 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency broadband semiconductor nanowire devices |
| CN105765741A (en) * | 2013-10-31 | 2016-07-13 | 三星电子株式会社 | Nano-structure semiconductor light emitting device |
| TW201535774A (en) * | 2014-03-11 | 2015-09-16 | Univ Nat Taiwan | Semiconductor light-emitting device and manufacturing method thereof |
| US20170170363A1 (en) * | 2015-12-14 | 2017-06-15 | Ostendo Technologies, Inc. | Methods for Producing Composite GaN Nanocolumns and Light Emitting Structures Made from the Methods |
| CN106373866A (en) * | 2016-09-22 | 2017-02-01 | 东莞市联洲知识产权运营管理有限公司 | Fabrication method of large-size silicon-based GaAs substrate |
| CN106374023A (en) * | 2016-10-31 | 2017-02-01 | 华南理工大学 | Nonpolar nanorod LED grown on lithium gallate substrate, and preparation method for nonpolar nanorod LED |
| CN106384763A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | Non-polar InGaN/GaN multi-quantum-well nano-pillar and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110517949A (en) * | 2019-07-29 | 2019-11-29 | 太原理工大学 | It is a kind of to utilize SiO2Method as the substrate preparation nonpolarity face a GaN epitaxial layer |
| CN110517949B (en) * | 2019-07-29 | 2021-05-11 | 太原理工大学 | By using SiO2Method for preparing nonpolar a-plane GaN epitaxial layer as substrate |
| CN112071741A (en) * | 2020-08-13 | 2020-12-11 | 深圳市奥谱太赫兹技术研究院 | III-group nitride layer structure, preparation method thereof and transistor |
| CN112071741B (en) * | 2020-08-13 | 2023-03-24 | 深圳市奥谱太赫兹技术研究院 | III-group nitride layer structure, preparation method thereof and transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109148654B (en) | 2020-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3352712B2 (en) | Gallium nitride based semiconductor device and method of manufacturing the same | |
| KR100988126B1 (en) | Method for forming nitride semiconductor and light emitting diode that include the same | |
| US11158702B2 (en) | Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor | |
| US10727054B2 (en) | Nitride-based semiconductor device and method for preparing the same | |
| KR100569796B1 (en) | Recovery of surface-ready silicon carbide substrates | |
| CN109360871B (en) | Patterned substrate, light-emitting diode epitaxial wafer and preparation method thereof | |
| CN107180747B (en) | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof | |
| CN109346576A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| WO2024040958A1 (en) | Led chip based on aluminum oxide-silicon oxide composite substrate and manufacturing method therefor | |
| CN109148654A (en) | III group-III nitride epitaxial structure of non-polar plane and preparation method thereof | |
| CN109728087B (en) | Method for preparing low-ohmic contact GaN-based HEMT based on nanosphere mask | |
| CN109273571B (en) | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN109686821B (en) | Preparation method of epitaxial wafer of light-emitting diode | |
| CN109301027B (en) | Radiation detector based on nonpolar InAlN/GaN heterostructure and preparation method thereof | |
| CN109300974B (en) | Nonpolar InAlN/GaN high electron mobility transistor and preparation method thereof | |
| CN116190215A (en) | Preparation method of diamond semiconductor device | |
| CN109686820A (en) | A kind of manufacturing method of LED epitaxial slice | |
| CN109545852A (en) | Nonpolar InAlN/GaN high electron mobility transistor and preparation method | |
| CN117561614A (en) | Method for manufacturing aluminum nitride layer | |
| WO2021226839A1 (en) | Group iii nitride structure and manufacturing method therefor | |
| KR20070080435A (en) | Iii-nitride semiconductor on si related substrate including the step formation and its opto-devices and manufacturing method thereof | |
| CN114121655A (en) | Self-termination etching method and device based on enhanced device | |
| CN113838931A (en) | High electron mobility transistor chip and preparation method thereof | |
| WO2016002801A1 (en) | Semiconductor layered structure and semiconductor element | |
| CN111640672A (en) | Enhanced gallium nitride-based high electron mobility transistor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |