CN109143707A - Conductive layer insulation method, conductive layer insulation structure and display device - Google Patents
Conductive layer insulation method, conductive layer insulation structure and display device Download PDFInfo
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- CN109143707A CN109143707A CN201811168225.2A CN201811168225A CN109143707A CN 109143707 A CN109143707 A CN 109143707A CN 201811168225 A CN201811168225 A CN 201811168225A CN 109143707 A CN109143707 A CN 109143707A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000009413 insulation Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000010410 layer Substances 0.000 claims description 270
- 239000012790 adhesive layer Substances 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 11
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 241000209094 Oryza Species 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 229910016027 MoTi Inorganic materials 0.000 description 3
- 229910020923 Sn-O Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical group 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 238000005289 physical deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HTCXJNNIWILFQQ-UHFFFAOYSA-M emmi Chemical compound ClC1=C(Cl)C2(Cl)C3C(=O)N([Hg]CC)C(=O)C3C1(Cl)C2(Cl)Cl HTCXJNNIWILFQQ-UHFFFAOYSA-M 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
The embodiment of the invention provides a conducting layer insulation method, a conducting layer insulation structure and a display device, wherein the method comprises the following steps: forming a conductive layer over the substrate, the conductive layer including the scan line and a gate of the switching element; forming the first insulating layer to cover the conductive layer; forming the second insulating layer to cover the first insulating layer, and arranging the active layer right above the partial second insulating layer corresponding to the grid electrode; wherein a density of the first insulating layer is greater than a density of the second insulating layer. By implementing the embodiment of the invention, the metal ions in the conducting layer can be effectively prevented from diffusing to the active layer connected with the second insulating layer, and the electric leakage phenomenon is effectively avoided.
Description
Technical field
The present invention relates to technical field of liquid crystal display, and in particular to a kind of conductive layer insulating method, conductive layer insulation system
And display device.
Background technique
Thin Film Transistor-LCD (thin film transistor-liquid crystal display, TFT-
LCD) there are the advantages such as high image quality, frivolous, low consumpting power, radiationless, be increasingly becoming the mainstream of display equipment.With thin
Film transistor liquid crystal display develops toward oversize, high driving frequency, high-resolution etc., thin film transistor liquid crystal display
Device is also higher and higher to the quality requirement of conducting wire process technique in production.
It, usually will be compared with low resistance in order to meet the growth requirement of the following high-frequency Yu high-resolution liquid crystal display specification
The copper metal of characteristic replaces aluminium alloy or pure aluminum metal conducting wire as conductor material.And since the activity of copper ion is larger and easy quilt
Oxidation, therefore the problem of copper ion is spread is had, cause the active layer of switch element in array processes by copper ion dirt
Dye, and then generating device leaky, cause scrap of the product.
Summary of the invention
The present invention provides a kind of conductive layer insulating method, conductive layer insulation system and display surfaces for preventing ion from spreading
Plate.
On the one hand, the embodiment of the invention provides a kind of conductive layer insulating methods, are applied on display panel, the display
Panel includes substrate, multiple switch element, multiple data lines and multi-strip scanning line, and the switch element includes active layer, described
Method includes:
Conductive layer is formed above the substrate, the conductive layer includes the grid of the scan line and the switch element
Pole；
First insulating layer is formed to be covered in above the conductive layer；
The second insulating layer is formed to be covered in the first insulating layer top, part second corresponding to the grid
The active layer is arranged in the surface of insulating layer；
Wherein, the density of first insulating layer is greater than the density of the second insulating layer.
On the other hand, the embodiment of the invention provides a kind of conductive layer insulation systems, are applied on display panel, described aobvious
Show that panel includes substrate, multiple switch element, multiple data lines and multi-strip scanning line, the switch element includes active layer, institute
Stating conductive layer insulation system includes:
Conductive layer is formed in above the substrate, and the conductive layer includes the grid of the scan line and the switch element
Pole；
First insulating layer is covered in above the conductive layer；
Second insulating layer is covered in above first insulating layer, and part second insulating layer corresponding to the grid is just
The active layer is arranged in top；
Wherein, the density of first insulating layer is greater than the density of the second insulating layer.
In another aspect, the display device includes display panel the embodiment of the invention provides a kind of display device, institute
Stating display panel includes:
Substrate；
Multiple data lines and multi-strip scanning line, the data line are just intersecting setting in area encompassed with the scan line
Multiple pixel units；And
Multiple switch element, the switch element include active layer；
Wherein, conductive layer insulation system is set on the substrate, and the conductive layer insulation system is any one of the above
Conductive layer insulation system.
The embodiment of the invention provides a kind of conductive layer insulating method, conductive layer insulation system and display panel, the conductions
Layer insulating method includes: to form conductive layer above the substrate；The first insulating layer is formed to be covered in above the conductive layer；
The second insulating layer is formed to be covered in above first insulating layer, part second insulating layer corresponding to the grid
The active layer is arranged in surface；Wherein, the density of first insulating layer is greater than the density of the second insulating layer.Implement this
Inventive embodiments can effectively prevent the metal ion in conductive layer to diffuse to the active layer connecting with second insulating layer, effectively keep away
Exempt to generate leaky.
Detailed description of the invention
Technical solution in order to illustrate the embodiments of the present invention more clearly, below will be to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of flow diagram of conductive layer insulating method in one embodiment of the invention；
Fig. 2 is a kind of structural schematic diagram of conductive layer insulation system in one embodiment of the invention；
Fig. 3 is a kind of structural schematic diagram of array substrate in one embodiment of the invention；
Fig. 4 is a kind of enlarged diagram of array substrate a-quadrant in one embodiment of the invention；
Fig. 5 is a kind of structural schematic diagram of display device in one embodiment of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.Obviously, described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
It should be appreciated that ought use in this specification and in the appended claims, term " includes " and "comprising" instruction
Described feature, entirety, step, operation, the presence of element and/or component, but one or more of the other feature, whole is not precluded
Body, step, operation, the presence or addition of element, component and/or its set.
Fig. 1 is please referred to, is a kind of flow diagram of conductive layer insulating method in the embodiment of the present invention.This method application
In on display panel, the display panel includes substrate, multiple switch element, multiple data lines and multi-strip scanning line, described to open
Closing element includes active layer, wherein the method includes the steps S101-S103.
S101 forms conductive layer above the substrate, and the conductive layer includes the scan line and the switch element
Grid.
In specific implementation, the display panel includes array substrate, and the array substrate includes the substrate, multiple switch
Element, multiple data lines and multi-strip scanning line.The substrate can be formed by substrates such as glass substrate or plastic substrates.It is described
Array substrate can be applied in the display panel of all kinds of display devices.For example, the display panel can be thin film transistor (TFT) liquid
LCD display in crystal display (thin film transistor-liquid crystal display, TFT-LCD)
Plate.The array substrate can be thin-film transistor array base-plate.The switch element can be thin film transistor (TFT).The switch
Element includes source electrode, grid, drain electrode, source layer etc..
Wherein, the conductive layer includes the grid of the scan line and the switch element, and the scan line is opened with described
The grid for closing element is electrically connected.The conductive layer can be copper metal conductive layer or copper alloy conductive layer.If the conduction
Layer is copper metal conductive layer, and the formation of the conductive layer can be accomplished in that using fine copper target, be deposited with sputtering method
Metal copper film is above the substrate.And by techniques such as exposure, development and etchings, Copper thin film is patterned to conductive layer.
S102 forms first insulating layer to be covered in above the conductive layer.
In specific implementation, the forming method of first insulating layer includes but is not limited to: single flow vacuum magnetic control sputtering method,
RF type vacuum magnetic control sputtering method and reactive sputtering method.
Wherein, first insulating layer can be silicon nitride.First insulating layer with a thickness of 150 Ethylmercurichlorendimides to 250 angstroms
Rice, such as the thickness of first insulating layer can be 150 Ethylmercurichlorendimides, 200 Ethylmercurichlorendimides or 250 Ethylmercurichlorendimides etc..
S103 forms the second insulating layer to be covered in the first insulating layer top, portion corresponding to the grid
Divide the surface of second insulating layer that the active layer is set.
In specific implementation, the forming method of the second insulating layer includes but is not limited to: single flow vacuum magnetic control sputtering method,
RF type vacuum magnetic control sputtering method and reactive sputtering method.The second insulating layer can be silicon nitride.
Wherein, the formation speed of first insulating layer is less than the formation speed of the second insulating layer.Described first absolutely
The density of edge layer is greater than the density of the second insulating layer.The thickness of first insulating layer and the thickness of the second insulating layer
Ratio be 1:20.For example, if first insulating layer with a thickness of 200 Ethylmercurichlorendimides；Accordingly, the thickness of the second insulating layer
For 4000 Ethylmercurichlorendimides.If first insulating layer with a thickness of 150 Ethylmercurichlorendimides；Accordingly, the second insulating layer with a thickness of
3000 Ethylmercurichlorendimides.If or first insulating layer with a thickness of 250 Ethylmercurichlorendimides；Accordingly, the second insulating layer with a thickness of
5000 Ethylmercurichlorendimides.
The active layer is metal-oxide semiconductor (MOS).For example, the active layer can be IGZO, HIZO, IZO, a-
InZnO, a-InZnO, ZnO:F, In2O3:Sn, In2O3:Mo, Cd2SnO4, ZnO:Al, TiO2:Nb or Cd-Sn-O etc..
Above each layer can also be formed using other modes, such as chemical vapor deposition mode or physical deposition mode, herein not
It repeats again.
Implement the embodiment of the present invention, by between second insulating layer and conductive layer density of setting be greater than second insulating layer
First insulating layer can effectively prevent the metal ion in conductive layer to diffuse to the active layer connecting with second insulating layer, effectively keep away
Exempt to generate leaky.
Further, the method also includes: adhesive layer, the attachment are formed between the substrate and the conductive layer
Layer is molybdenum alloy.The molybdenum alloy include but is not limited to be in MoNb, MoW, MoTi and MoZr any one or it is two or more
Mixture.In specific implementation, the adhesive layer can be first formed on the substrate, then is led described in formation on the adhesive layer
Electric layer.For example, first providing substrate, and substrate is cleaned by deionized water.Then pass through molybdenum alloy as sputtering source
Sputtering technology forms the adhesive layer on the substrate；Then Copper thin film is formed in a manner of sputter on the adhesive layer,
And by techniques such as exposure, development and etchings, Copper thin film is patterned to conductive layer.
Implement the embodiment of the present invention, the adhesiveness between the conductive layer and the substrate can be enhanced by adhesive layer, had
Conducive to the integrally-built stability of enhancing.Meanwhile the adhesive layer can also prevent the metal ion in conductive layer to be diffused into institute
It states in substrate, improves the reliability of product.
It referring to figure 2., is a kind of structural schematic diagram of conductive layer insulation system in the embodiment of the present invention.Wherein, this is led
Electric layer insulation system 100 is applied on display panel, and the display panel includes substrate 210, multiple switch element, a plurality of data
Line and multi-strip scanning line, the switch element include active layer 140.Further, the conductive layer insulation system 100 includes leading
Electric layer 110, the first insulating layer 120 and second insulating layer 130.
Conductive layer 110 is formed in 210 top of substrate, and the conductive layer 110 includes the scan line and the switch
The grid of element.
In specific implementation, the display panel includes array substrate 200, and the array substrate 200 includes the substrate
210, multiple switch element, multiple data lines and multi-strip scanning line.The substrate 210 can be by glass substrate or plastic substrate
Equal substrates are formed.The array substrate 200 can be applied in the display panel of all kinds of display devices.For example, the display panel
It can be Thin Film Transistor-LCD (thin film transistor-liquid crystal display, TFT-
LCD the liquid crystal display panel in).The array substrate can be thin-film transistor array base-plate.The switch element can be
Thin film transistor (TFT).The switch element includes source electrode, grid, drain electrode, source layer etc..
Wherein, the grid of the conductive layer 110 including the scan line and the switch element, the scan line with it is described
The grid of switch element is electrically connected.The conductive layer 110 can be copper metal conductive layer or copper alloy conductive layer.If described
Conductive layer 110 is copper metal conductive layer, and the formation of the conductive layer 110 can be accomplished in that using fine copper target, with
Sputtering method deposited metal Copper thin film is above the substrate 210.And by techniques such as exposure, development and etchings, by Copper thin film figure
Case is melted into conductive layer 110.
First insulating layer 120 is covered in 110 top of conductive layer.
In specific implementation, the forming method of first insulating layer 120 includes but is not limited to: single flow vacuum magnetic control sputter
Method, RF type vacuum magnetic control sputtering method and reactive sputtering method.
Wherein, first insulating layer 120 can be silicon nitride.First insulating layer 120 with a thickness of 150 Ethylmercurichlorendimides extremely
250 Ethylmercurichlorendimides, such as the thickness of first insulating layer 120 can be 150 Ethylmercurichlorendimides, 200 Ethylmercurichlorendimides or 250 Ethylmercurichlorendimides etc..
Second insulating layer 130 is covered in 120 top of the first insulating layer, and part second corresponding to the grid is exhausted
The active layer 140 is set right above edge layer 130.
In specific implementation, the forming method of the second insulating layer 130 includes but is not limited to: single flow vacuum magnetic control sputter
Method, RF type vacuum magnetic control sputtering method and reactive sputtering method.The second insulating layer 130 can be silicon nitride.
Wherein, the formation speed of first insulating layer 120 is less than the formation speed of the second insulating layer 130.It is described
The density of first insulating layer 120 is greater than the density of the second insulating layer 130.The thickness of first insulating layer 120 with it is described
The ratio of the thickness of second insulating layer 130 is 1:20.For example, if first insulating layer 120 with a thickness of 200 Ethylmercurichlorendimides；It is corresponding
Ground, the second insulating layer 130 with a thickness of 4000 Ethylmercurichlorendimides.If first insulating layer 120 with a thickness of 150 Ethylmercurichlorendimides；
Accordingly, the second insulating layer 130 with a thickness of 3000 Ethylmercurichlorendimides.If or first insulating layer 120 with a thickness of 250
Ethylmercurichlorendimide；Accordingly, the second insulating layer 130 with a thickness of 5000 Ethylmercurichlorendimides.
The active layer 140 is metal-oxide semiconductor (MOS).For example, the active layer 140 can be IGZO, HIZO,
IZO, a-InZnO, a-InZnO, ZnO:F, In2O3:Sn, In2O3:Mo, Cd2SnO4, ZnO:Al, TiO2:Nb or Cd-Sn-O
Deng.
Above each layer can also be formed using other modes, such as chemical vapor deposition mode or physical deposition mode, herein not
It repeats again.
Implement the embodiment of the present invention, by between second insulating layer 130 and conductive layer 110 density of setting be greater than second absolutely
First insulating layer 120 of edge layer 130, the metal ion that can be effectively prevent in conductive layer 110 is diffused to be connected with second insulating layer 130
The active layer 140 connect effectively avoids generating leaky.
Further, the conductive layer insulation system 100 further includes adhesive layer 150, and the adhesive layer 150 is set to described
Between substrate 210 and the conductor layer.The adhesive layer 150 be molybdenum alloy, the molybdenum alloy include but is not limited to be MoNb,
Any one in MoW, MoTi and MoZr or two or more mixtures.In specific implementation, can first it be formed on the substrate
The adhesive layer 150, then the conductive layer 110 is formed on the adhesive layer 150.For example, first providing substrate 210, and pass through
Deionized water cleans substrate 210.Then using molybdenum alloy as sputtering source by sputtering technology, on the substrate 210
Form the adhesive layer 150；Then Copper thin film is formed in a manner of sputter on the adhesive layer 150, and passes through exposure, development
And the techniques such as etching, Copper thin film is patterned to conductive layer 110.
Implement the embodiment of the present invention, can be enhanced between the conductive layer 110 and the substrate 210 by adhesive layer 150
Adhesiveness is conducive to enhance integrally-built stability.Meanwhile the adhesive layer 150 can also prevent the gold in conductive layer 110
Belong to ion to be diffused into the substrate 210, improves the reliability of product.
It is the structural schematic diagram of a kind of array substrate 200 and should in one embodiment of the invention referring to figure 3. to Fig. 4
The enlarged diagram of array substrate a-quadrant.The array substrate 200 includes substrate 210, multiple data lines 230 and multi-strip scanning line
240, the data line 230 is just intersecting the multiple pixel units of setting in area encompassed with the scan line 240；And it is multiple
Switch element 220, the switch element 220 include active layer 140.
Specifically referring to figure 2., conductive layer insulation system 100, the conductive layer insulation system are set on the substrate 210
100 include conductive layer 110, the first insulating layer 120 and second insulating layer 130.
Conductive layer 110, is formed in 210 top of the substrate, and the conductive layer 110 includes the scan line 240 and described
The grid of switch element 220.
In specific implementation, the display panel includes array substrate 200, and the array substrate 200 includes the substrate
210, multiple switch element, multiple data lines and multi-strip scanning line.The substrate 210 can be by glass substrate or plastic substrate
Equal substrates are formed.The array substrate 200 can be applied in the display panel of all kinds of display devices.For example, the display panel
It can be Thin Film Transistor-LCD (thin film transistor-liquid crystal display, TFT-
LCD the liquid crystal display panel in).The array substrate 200 can be thin-film transistor array base-plate.The switch element 220
It can be thin film transistor (TFT).The switch element 220 includes source electrode, grid, drain electrode, source layer etc..
Wherein, the conductive layer 110 includes the grid of the scan line 240 and the switch element 220, the scan line
240 are electrically connected with the grid of the switch element 220.The conductive layer 110 can be copper metal conductive layer or copper alloy
Conductive layer.If the conductive layer 110 is copper metal conductive layer, the formation of the conductive layer 110, which can be accomplished in that, is adopted
With fine copper target, with sputtering method deposited metal Copper thin film above the substrate 210.And pass through the works such as exposure, development and etching
Copper thin film is patterned to conductive layer 110 by skill.
First insulating layer 120 is covered in 110 top of conductive layer.
In specific implementation, the forming method of first insulating layer 120 includes but is not limited to: single flow vacuum magnetic control sputter
Method, RF type vacuum magnetic control sputtering method and reactive sputtering method.
Wherein, first insulating layer 120 can be silicon nitride.First insulating layer 120 with a thickness of 150 Ethylmercurichlorendimides extremely
250 Ethylmercurichlorendimides, such as the thickness of first insulating layer 120 can be 150 Ethylmercurichlorendimides, 200 Ethylmercurichlorendimides or 250 Ethylmercurichlorendimides etc..
Second insulating layer 130 is covered in 120 top of the first insulating layer, and part second corresponding to the grid is exhausted
The active layer 140 is set right above edge layer 130.
In specific implementation, the forming method of the second insulating layer 130 includes but is not limited to: single flow vacuum magnetic control sputter
Method, RF type vacuum magnetic control sputtering method and reactive sputtering method.The second insulating layer 130 can be silicon nitride.
Wherein, the formation speed of first insulating layer 120 is less than the formation speed of the second insulating layer 130.It is described
The density of first insulating layer 120 is greater than the density of the second insulating layer 130.The thickness of first insulating layer 120 with it is described
The ratio of the thickness of second insulating layer 130 is 1:20.For example, if first insulating layer 120 with a thickness of 200 Ethylmercurichlorendimides；It is corresponding
Ground, the second insulating layer 130 with a thickness of 4000 Ethylmercurichlorendimides.If first insulating layer 120 with a thickness of 150 Ethylmercurichlorendimides；
Accordingly, the second insulating layer 130 with a thickness of 3000 Ethylmercurichlorendimides.If or first insulating layer 120 with a thickness of 250
Ethylmercurichlorendimide；Accordingly, the second insulating layer 130 with a thickness of 5000 Ethylmercurichlorendimides.
The active layer 140 is metal-oxide semiconductor (MOS).For example, the active layer 140 can be IGZO, HIZO,
IZO, a-InZnO, a-InZnO, ZnO:F, In2O3:Sn, In2O3:Mo, Cd2SnO4, ZnO:Al, TiO2:Nb or Cd-Sn-O
Deng.
Above each layer can also be formed using other modes, such as chemical vapor deposition mode or physical deposition mode, herein not
It repeats again.
Implement the embodiment of the present invention, by between second insulating layer 130 and conductive layer 110 density of setting be greater than second absolutely
First insulating layer 120 of edge layer 130, the metal ion that can be effectively prevent in conductive layer 110 is diffused to be connected with second insulating layer 130
The active layer 140 connect effectively avoids generating leaky.
Further, the conductive layer insulation system 100 further includes adhesive layer 150, and the adhesive layer 150 is set to described
Between substrate 210 and the conductor layer.The adhesive layer 150 be molybdenum alloy, the molybdenum alloy include but is not limited to be MoNb,
Any one in MoW, MoTi and MoZr or two or more mixtures.In specific implementation, can first it be formed on the substrate
The adhesive layer 150, then the conductive layer 110 is formed on the adhesive layer 150.For example, first providing substrate 210, and pass through
Deionized water cleans substrate 210.Then using molybdenum alloy as sputtering source by sputtering technology, on the substrate 210
Form the adhesive layer 150；Then Copper thin film is formed in a manner of sputter on the adhesive layer 150, and passes through exposure, development
And the techniques such as etching, Copper thin film is patterned to conductive layer 110.
Implement the embodiment of the present invention, can be enhanced between the conductive layer 110 and the substrate 210 by adhesive layer 150
Adhesiveness is conducive to enhance integrally-built stability.Meanwhile the adhesive layer 150 can also prevent the gold in conductive layer 110
Belong to ion to be diffused into the substrate 210, improves the reliability of product.It referring to figure 5., is in one embodiment of the invention
A kind of structural schematic diagram of display device.The display device 300 includes shell 310 and display panel 320, the display surface
Plate 320 includes substrate, multiple data lines and multi-strip scanning line, and the data line just intersects area encompassed with the scan line
The interior multiple pixel units of setting；And multiple switch element, the switch element include active layer；Wherein, on the substrate
Conductive layer insulation system is set.The conductive layer insulation system is the conductive layer insulation system 100 in previous embodiment.The conductive layer
The specific descriptions of insulation system 100 refer to previous embodiment, and details are not described herein again.
It should be noted that for simple description, therefore, it is stated as a systems for each embodiment of the method above-mentioned
The combination of actions of column, but those skilled in the art should understand that, the present invention is not limited by the sequence of acts described, because
For according to the application, certain some step be can be performed in other orders or simultaneously.Secondly, those skilled in the art also should
Know, the embodiments described in the specification are all preferred embodiments, related actions and modules not necessarily this Shen
It please be necessary.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, is not described in some embodiment
Part, reference can be made to the related descriptions of other embodiments.
The steps in the embodiment of the present invention can be sequentially adjusted, merged and deleted according to actual needs.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in various equivalent modifications or replace
It changes, these modifications or substitutions should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with right
It is required that protection scope subject to.
Claims (10)
1. a kind of conductive layer insulating method, be applied on display panel, the display panel include substrate, multiple switch element,
Multiple data lines and multi-strip scanning line, the switch element include active layer, which is characterized in that the described method includes:
Conductive layer is formed above the substrate, the conductive layer includes the grid of the scan line and the switch element；
First insulating layer is formed to be covered in above the conductive layer；
The second insulating layer is formed to be covered in above first insulating layer, part second corresponding to the grid is insulated
The active layer is arranged in the surface of layer；
Wherein, the density of first insulating layer is greater than the density of the second insulating layer.
2. the method as described in claim 1, which is characterized in that first insulating layer with a thickness of 150 Ethylmercurichlorendimides to 250 angstroms
Rice.
3. the method as described in claim 1, which is characterized in that the formation speed of first insulating layer is less than described second absolutely
The formation speed of edge layer.
4. the method as described in claim 1, which is characterized in that the thickness of first insulating layer and the second insulating layer
The ratio of thickness is 1:20.
5. the method as described in claim 1, which is characterized in that the method also includes:
Adhesive layer is formed between the substrate and the conductive layer, the adhesive layer is molybdenum alloy.
6. a kind of conductive layer insulation system, it is applied on display panel, which is characterized in that the display panel includes substrate, more
A switch element, multiple data lines and multi-strip scanning line, the switch element include active layer, the conductive layer insulation system packet
It includes:
Conductive layer is formed in above the substrate, and the conductive layer includes the grid of the scan line and the switch element；
First insulating layer is covered in above the conductive layer；
Second insulating layer is covered in above first insulating layer, right above part second insulating layer corresponding to the grid
The active layer is set；
Wherein, the density of first insulating layer is greater than the density of the second insulating layer.
7. conductive layer insulation system as claimed in claim 6, which is characterized in that first insulating layer with a thickness of 150 angstroms
Rice is to 250 Ethylmercurichlorendimides.
8. conductive layer insulation system as claimed in claim 6, which is characterized in that the thickness of first insulating layer and described the
The ratio of the thickness of two insulating layers is 1:20.
9. conductive layer insulation system as claimed in claim 6, which is characterized in that the conductive layer insulation system further includes attachment
Layer, the adhesive layer are set between the conductive layer and the substrate, and the adhesive layer is molybdenum alloy.
10. a kind of display device, the display device includes shell and display panel, which is characterized in that the display panel
Include:
Substrate；
Multiple data lines and multi-strip scanning line, it is multiple that the data line and the scan line are just intersecting setting in area encompassed
Pixel unit；And
Multiple switch element, the switch element include active layer；
Wherein, conductive layer insulation system is set on the substrate, and the conductive layer insulation system is any in claim 6-9
One conductive layer insulation system.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811168225.2A CN109143707A (en) | 2018-10-08 | 2018-10-08 | Conductive layer insulation method, conductive layer insulation structure and display device |
| PCT/CN2018/118135 WO2020073456A1 (en) | 2018-10-08 | 2018-11-29 | Method and structure for insulating conductive layer, and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811168225.2A CN109143707A (en) | 2018-10-08 | 2018-10-08 | Conductive layer insulation method, conductive layer insulation structure and display device |
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| CN109143707A true CN109143707A (en) | 2019-01-04 |
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| CN201811168225.2A Pending CN109143707A (en) | 2018-10-08 | 2018-10-08 | Conductive layer insulation method, conductive layer insulation structure and display device |
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| WO (1) | WO2020073456A1 (en) |
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| CN103456738A (en) * | 2012-06-05 | 2013-12-18 | 群康科技(深圳)有限公司 | Thin film transistor substrate and displayer |
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| WO2020073456A1 (en) | 2020-04-16 |
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