CN109142300A - 一种Y型228nm激光发射装置 - Google Patents
一种Y型228nm激光发射装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 3
- 239000012788 optical film Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 18
- 238000002310 reflectometry Methods 0.000 claims description 14
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 abstract 5
- 238000001514 detection method Methods 0.000 description 7
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
- 238000001391 atomic fluorescence spectroscopy Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6402—Atomic fluorescence; Laser induced fluorescence
- G01N21/6404—Atomic fluorescence
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6402—Atomic fluorescence; Laser induced fluorescence
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N2021/6417—Spectrofluorimetric devices
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Abstract
本发明公开了一种Y型228nm激光发射装置,包括808nm半导体激光器;前后面镀808nm增透膜的聚焦镜;前面镀914nm高反膜,808nm、1064nm和1342nm增透膜,后面镀914nm高反膜,1064nm和1342nm增透膜的Nd:YVO4;前面镀入射角为15°时914nm高反膜,457nm、1064nm和1342 nm增透膜,后面镀入射角为15°时228nm高反膜,457nm增透膜的平面镜;前后面镀457nm和914nm增透膜的LBO;凹面镀457nm和914nm高反膜的平凹镜;前后面镀228nm和457nm增透膜的BBO;凹面镀457nm高反膜、228nm增透膜,平面镀228nm高反膜的平凹镜;中心波长为228nm±5nm滤光片。该装置实现了228nm激光发射。
Description
技术领域
本发明涉及全固态激光技术领域,特别涉及一种Y型228nm激光发射装置。
背景技术
原子荧光光谱法是以原子在辐射能激发下发射的荧光强度进行定量分析的发射光谱分析法,因为其谱线简单、检出限低、重复性高、线性范围宽等优点受到广大研究者的青睐并获得广泛使用。原子荧光光谱法采用的光源通常为空心阴极灯或氙弧灯,其存在很多缺点,寿命短、不稳定,同时存在荧光猝灭效应和散射光的干扰等,光源的缺点导致检测精度偏高。原子的荧光强度在一定条件下和原子荧光激发光源的强度成正比,通过提高激发光源强度则可进一步提高仪器的检出限,提高检测的稳定性。用激光替代传统激发光源,能提高原子光谱检测精度。针对环境重金属污染,228nm深紫外固态激光是一种高强度光源,可作为原子荧光光谱检测重金属污染的激发光源,进而提高仪器的检出限和检测的稳定性。
发明内容
本发明的目的在于提出一种Y型228nm激光发射装置。
一种Y型228nm激光发射装置,包括808nm半导体激光器、808nm聚焦镜、Nd:YVO4激光晶体、平面镜M1、LBO倍频晶体、平凹镜M2、BBO倍频晶体、平凹镜M3和滤光片。
其特征在于:
808nm半导体激光器输出波长范围为808±3nm,连续输出最大功率为5W。
808nm聚焦镜前后表面镀有808nm处透过率大于99%的光学膜。
Nd:YVO4激光晶体前表面镀有914nm处反射率大于99%,808nm、1064nm和1342nm处透过率大于95%的光学膜,后表面镀有914nm处透过率大于99%,1064nm和1342nm处透过率大于95%的光学膜。
平面镜M1前表面镀有入射角为15°时914nm处反射率大于99%,457nm、1064nm和1342nm处透过率大于98%的光学膜,后表面镀有入射角为15°时228nm处反射率大于95%,457nm处透过率大于99%的光学膜。
LBO倍频晶体前后表面镀有457nm和914nm处透过率大于99%的光学膜。
平凹镜M2凹面镀有457nm和914nm处反射率大于99%的光学膜,平面不镀光学膜。
BBO倍频晶体前后表面镀有228nm和 457nm处透过率大于99%的光学膜。
平凹镜M3凹面镀有457nm处反射率大于99%、228nm处透过率大于95%的光学膜,平面镀有228nm处透过率大于99%光学膜。
滤光片中心波长为228nm±5nm、半高全宽为35nm±10nm、峰值透过率大于30%、截止带为350nm到1150nm。
附图说明
图1是本发明具体实施方式的装置图。
具体实施方式
下面结合图1对本发明进一步详细说明。
本发明公开了一种一种Y型228nm激光发射装置,包括1—808nm半导体激光器、2—808nm聚焦镜、3—Nd:YVO4激光晶体、4—平面镜M1、5—LBO倍频晶体、6—平凹镜M2、7—BBO倍频晶体、8—平凹镜M3和9—滤光片。
将1—808nm半导体激光器输出的808nm的激光通过2—808nm聚焦镜会聚到3—Nd:YVO4激光晶体上,由于808nm激光的泵浦,3—Nd:YVO4激光晶体产生914nm、1064nm和1342nm三种激光。
从3—Nd:YVO4激光晶体出来的三种914nm、1064nm和1342nm激光以15°入射角经过前表面镀有入射角为15°时914nm处反射率大于99%,457nm、1064nm和1342nm处透过率大于98%的光学膜,后表面镀有入射角为15°时228nm处反射率大于95%,457nm处透过率大于99%光学膜的4—平面镜M1,1064和1342nm激光通过4—平面镜M1透射,没有形成谐振。
914nm激光通过4—平面镜M1反射通过前后表面镀有457nm和914nm处透过率大于99%光学膜的5—LBO倍频晶体,进行倍频,产生457nm激光。
457nm激光再通过凹面镀有457nm和914nm处反射率大于99%的光学膜,平面不镀光学膜的6—平凹镜M2反射,再依次通过5—LBO倍频晶体和4—平面镜M1,进入前后表面镀有228nm和457nm处透过率大于99%光学膜的7—BBO倍频晶体,倍频产生228nm激光。
228nm激光再经过凹面镀有457nm处反射率大于99%、228nm处透过率大于95%的光学膜,平面镀有228nm处透过率大于99%光学膜的8—平凹镜M3,最后经过中心波长228nm±5nm、半高全宽35nm±10nm和峰值透过率大于30%、截止带为350nm到1150nm的9—滤光片,输出228nm激光。
Claims (1)
1.一种Y型228nm激光发射装置,其特征在于,包括:
808nm半导体激光器;808nm聚焦镜;前表面镀有914nm处反射率大于99%,808nm、1064nm和1342nm处透过率大于95%的光学膜,后表面镀有914nm处透过率大于99%,1064nm和1342nm处透过率大于95%光学膜的Nd:YVO4激光晶体;前表面镀有入射角为15°时914nm处反射率大于99%,457nm、1064nm和1342nm处透过率大于98%的光学膜,后表面镀有入射角为15°时228nm处反射率大于95%,457nm处透过率大于99%光学膜的平面镜M1;前后表面镀有457nm和914nm处透过率大于99%光学膜的LBO倍频晶体;凹面镀有457nm和914nm处反射率大于99%的光学膜,平面不镀光学膜的平凹镜M2;前后表面镀有228nm和457nm处透过率大于99%光学膜的BBO倍频晶体;凹面镀有457nm处反射率大于99%、228nm处透过率大于95%的光学膜,平面镀有228nm处透过率大于99%光学膜的平凹镜M3;中心波长228nm±5nm、半高全宽35nm±10nm和峰值透过率大于30%、截止带为350nm到1150nm的滤光片。
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CN111478169A (zh) * | 2020-05-23 | 2020-07-31 | 海南师范大学 | 一种深紫外波长激光发射装置 |
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