CN111478169A - 一种深紫外波长激光发射装置 - Google Patents

一种深紫外波长激光发射装置 Download PDF

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CN111478169A
CN111478169A CN202010444890.0A CN202010444890A CN111478169A CN 111478169 A CN111478169 A CN 111478169A CN 202010444890 A CN202010444890 A CN 202010444890A CN 111478169 A CN111478169 A CN 111478169A
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laser
mirror
crystal
frequency doubling
tio
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李再金
曲轶
李林
乔忠良
赵志斌
曾丽娜
彭鸿雁
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Hainan Normal University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

本发明公开了一种深紫外波长激光发射装置，包括808nm半导体激光器；808nm聚焦镜；Nd:YVO4激光晶体；平面镜；LBO倍频；平凹镜A；CLBO倍频晶体；平凹镜B；228.5nm滤光片。808nm半导体激光器发射的808nm激光通过808nm聚焦镜将808nm激光聚焦到Nd:YVO4激光晶体中，Nd:YVO4激光晶体通过808nm激光泵浦发射914nm激光；914nm激光通过平面镜反射，再通过LBO倍频晶体倍频产生457nm激光；457nm激光通过平凹镜A反射，依次通过LBO倍频晶体和平面镜，再通过CLBO倍频晶体倍频产生新波长228.5nm激光；新波长228.5nm激光通过输出镜平凹镜B，最后通过228.5nm滤光片发射新波长228.5nm深紫外激光。

Description

一种深紫外波长激光发射装置
技术领域
本发明涉及深紫外全固态激光技术领域，特别涉及一种深紫外波长激光发射装置。
背景技术
深紫外激光是目前正在开发的一个重要激光应用领域。深紫外激光的开发将极大的推动光刻技术、激光精密加工、各种光电子能谱仪、激光光谱仪、激光Raman光谱仪等高技术领域和先进仪器制造业的发展。紫外激光器包含气体紫外激光器、固体紫外激光器、半导体激光二极管，这些是依据激光增益介质的形态划分的。常见的气体紫外激光器包括准分子激光器、离子激光器、氦-镉激光器、金属蒸汽紫外激光器。固体紫外激光器常见的有氪灯泵浦紫外激光器、氙灯泵浦紫外激光器、激光二极管泵浦固体紫外激光器。准分子激光器具有平均功率高的优点，但是由于其光束质量差、波段范围窄、调谐困难、不能研究超快过程，且大多含有有毒气体，其使用范围受到限制。传统的闪光灯泵浦的紫外激光器也由于一些如设备运营费用高、使用寿命短、占地面积大等缺点而迫使人们探索新的泵浦源。由于激光二极管的飞速发展，从而带动了激光二极管泵浦的固体激光器的快速发展。同时由于一些新型非线性晶体的出现，激光频率变换技术的成熟，使得全固态紫外激光器的紫外激光输出技术越来越成熟。全固态紫外激光因为具有光束质量好，可调谐的特点，且由于紫外波长较短的缘故，其空间分辨率也非常高，因此全固态紫外激光的应用非常广泛。
发明内容
本发明的目的在于提出一种深紫外波长激光发射装置。
一种深紫外波长激光发射装置，包括808nm半导体激光器；808nm聚焦镜；Nd:YVO4激光晶体；平面镜；LBO倍频；平凹镜A；倍频晶体CLBO；平凹镜B；228.5nm滤光片。
其特征在于：
808nm半导体激光器，其输出波长范围为808±3nm，连续输出最小功率为5W。
808nm聚焦镜，其前后表面镀有181.7nm TiO2/96.7nm SiO2/156.9 nm TiO2/94.1nm SiO2的光学膜。实现808nm处透过率大于99%。
Nd:YVO4激光晶体，其前表面镀有108.1nm TiO2/144.9nm SiO2/29.8nm TiO2/280.7nm SiO2/260.8nm TiO2/232.1nm SiO2/62.1nm TiO2/157.2nm SiO2/101.5nm TiO2/156.2nm SiO2/97.7nm TiO2/477.3nm SiO2/105.7nm TiO2/165.3nm SiO2/90.8nm TiO2/96.8nm SiO2/92.8nm TiO2/267.2nm SiO2/256.4nm TiO2/的光学膜，实现914nm处反射率大于99%，808nm、1064nm和1342nm处透过率大于95%，后表面镀有31.4nm SiO2/51.9nm TiO2/206.8nm SiO2的光学膜，实现914nm处透过率大于99%，1064nm和1342nm处透过率大于95%。
平面镜，其前表面镀有84.8nm TiO2/133.1nm SiO2/91.4nm TiO2/146.5nm SiO2/94.8nm TiO2/133.1nm SiO2/77.1nm TiO2/149.9nm SiO2/104.5nm TiO2/190.4nm SiO2/93.9nm TiO2/180.2nm SiO2/90.4nm TiO2/131.5nm SiO2/78.3nm TiO2/147.9nm SiO2/120.6nm TiO2/88.8nm SiO2/91.1nm TiO2的光学膜，实现入射角为10°时914nm处反射率大于99%，457nm、1064nm和1342nm处透过率大于99%，后表面镀有18.4nm HfO2/46.5nm MgF2/29.6nm HfO2/44.6nm MgF2/29.4nm HfO2/41.8nm MgF2/25.3nm HfO2/47.3nm MgF2/32.1nmHfO2/34.1nm MgF2/38.3nm HfO2/20.1nm MgF2/43.9nm HfO2/44.1nm MgF2/14.2nm HfO2/61.6nm MgF2/15.4nm HfO2/70.8nm MgF2/13.6nm HfO2的光学膜，实现入射角为10°时228.5nm处反射率大于95%，457nm处透过率大于99%的光学膜。
LBO倍频晶体，其前后表面镀有149.1nm SiO2/112.7nm TiO2/16.1nm SiO2/47.8nmTiO2/75.3nm SiO2的光学膜，实现457nm和914nm处透过率大于99%。
平凹镜A，其凹面镀有66.6nm TiO2/200.9nm SiO2/66.4nm TiO2/200.9nm SiO2/67.5nm TiO2/42.8nm SiO2/26.1nm TiO2/107.2nm SiO2/124.1nm TiO2/107.4nm SiO2/123.8nm TiO2/107.5nm SiO2/123.7nm TiO2/107.6nm SiO2/123.6nm TiO2/107.9nm SiO2/123.5nm TiO2/108.5nm SiO2/123.2nm TiO2，实现457nm和914nm处反射率大于99%，平面不镀光学膜。
CLBO倍频晶体前后表面镀有112.6nm HfO2/73.7nm MgF2/13.5nm HfO2/126.1nmMgF2的光学膜，实现228.5nm和 457nm处透过率大于99%的光学膜。
平凹镜B，其凹面镀有56.2nm HfO2/68.8nm MgF2/62.5nm HfO2/82.7nm MgF2/56.6nm HfO2/86.7nm MgF2/55.3nm HfO2/87.5nm MgF2/57.4nm HfO2/85nm MgF2/60.4nmHfO2/79nm MgF2/74.1nm HfO2/45.3nm MgF2/78.2nm HfO2/20.1nm MgF2/85.8nm HfO2/103.1nm MgF2/40.1nm HfO2/112.8nm MgF2/63.9nm HfO2的光学膜，实现457nm处反射率大于99%、228.5nm处透过率大于95%，平面镀有46.9nm HfO2/34.1nm MgF2的光学膜，实现228.5nm处透过率大于99%。
228.5nm滤光片，其中心波长为228.5nm±5nm、峰值透过率大于30%、截止带为350nm到1150nm。
附图说明
图1是本发明具体实施方式的装置图。
具体实施方式
下面结合图1对本发明进一步详细说明。
本发明公开了一种深紫外波长激光发射装置，包括1—808nm半导体激光器、2—808nm聚焦镜、3—Nd:YVO4激光晶体、4—平面镜、5—LBO倍频晶体、6—平凹镜A、7—CLBO倍频晶体、8—平凹镜B和9—228.5nm滤光片。
将1—808nm半导体激光器输出的808nm的激光通过2—808nm聚焦镜会聚到3—Nd:YVO4激光晶体中，3—Nd:YVO4激光晶体通过808nm激光的泵浦，产生914nm激光。
从3—Nd:YVO4激光晶体出来的914nm激光以10°入射到4—平面镜上反射，914nm激光反射后通过5—LBO倍频晶体，进行倍频，产生457nm激光。
457nm激光通过6—平凹镜A反射，再通过5—LBO倍频晶体和4—平面镜，射入7—CLBO倍频晶体进行倍频，产生深紫外波长228.5nm激光。
228.5nm激光通过输出镜8—平凹镜B，最后通过9—228.5nm滤光片，实现输出深紫外波长228.5nm激光。

Claims (1)

1.一种深紫外波长激光发射装置，其特征在于，包括：808nm半导体激光器；808nm聚焦镜；Nd:YVO4激光晶体；平面镜；LBO倍频；平凹镜A；CLBO倍频晶体；平凹镜B；228.5nm滤光片；808nm半导体激光器发射的808nm激光通过808nm聚焦镜将808nm激光聚焦到Nd:YVO4激光晶体中，Nd:YVO4激光晶体通过808nm激光泵浦发射914nm激光；914nm激光通过平面镜反射，再通过LBO倍频晶体倍频产生457nm激光；457nm激光通过平凹镜A反射，依次通过LBO倍频晶体和平面镜，再通过CLBO倍频晶体倍频产生新波长228.5nm激光；新波长228.5nm激光通过输出镜平凹镜B，最后通过228.5nm滤光片发射新波长228.5nm深紫外激光。
CN202010444890.0A 2020-05-23 2020-05-23 一种深紫外波长激光发射装置 Pending CN111478169A (zh)

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