CN109136984A - 一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP及其制备方法 - Google Patents
一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP及其制备方法 Download PDFInfo
- Publication number
- CN109136984A CN109136984A CN201811159682.5A CN201811159682A CN109136984A CN 109136984 A CN109136984 A CN 109136984A CN 201811159682 A CN201811159682 A CN 201811159682A CN 109136984 A CN109136984 A CN 109136984A
- Authority
- CN
- China
- Prior art keywords
- mos
- cfp
- nps
- hydrogen
- composite catalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
- C25B11/091—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/055—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
- C25B11/057—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of a single element or compound
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Catalysts (AREA)
Abstract
本发明公开了一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP的制备方法,该材料是通过电沉积与原子层沉积结合的两步方法合成,以清洗并作亲水性处理后的碳纤维为基底,通过原子层沉积方法在其碳纤维管上生长MoS2,再结合电沉积方法在铺设纳米金颗粒来修饰MoS2,从而完成该复合催化剂结构设计。该结构可以充分的利用导电性良好的碳纤维管为基底,并通过结合ALD方法均匀铺设在碳纤维管上的MoS2与电沉积修饰的金纳米颗粒优化硫化钼的析氢性能,使其活性得到显著提高。整个结构不仅为电子的快速传递提供了有效的通道,更是为析氢反应的发生提供了良好的活性位点,实现了高效析氢。
Description
技术领域
本发明属于能源材料领域,具体涉及一种用于高效析氢的三维复合催化剂AuNPs/MoS2/CFP及其制备方法。
背景技术
随着社会的发展与进步,全球对能源的需求也急剧增加,能源问题成为了当前最为迫切的问题。此外,化石燃料的燃烧使用会释放大量的毒害气体,造成了严重的环境污染,时时刻刻的危害着人们的健康。因此开发利用新型的清洁能源是我们的当务之急。在众多可能的替代能源中,利用水的电解制取氢气被认为是最具有潜力的。不仅是因为氢气具有高达142MJ/kg的能量密度,更是因其来源于地球上最常见也占比量很大的水资源。此外,氢气作为燃料使用产物只有水,不会生成二氧化碳等有害气体,清洁性很好,具有广泛的应用前景。作为氢气获取的一种重要方式,电解水制氢过程制备装置简单且效率较高。其中Pt族贵金属催化剂在电解制氢过程中有着极高的催化活性和效率,但因其较为昂贵的价格和稀缺的储量使得大规模制取氢气受到了限制。因此研发高性能和低成本的电催化剂成为了目前主要研究的内容。
基于二维材料的析氢催化剂成为近年来的研究热点。研究发现以二维过渡族金属硫族化合物中的典型代表二硫化钼(MoS2)为例,其具有较大的比表面积和较为丰富的活性位点等特点。且由密度泛函理论(DFT)计算发现,MoS2的Mo边缘的氢吸附自由能与Pt相当,具有较高的催化活性,且层数越薄其边缘原子的析氢活性就越高。种种研究表明了MoS2是一种高性能电催化剂的材料。
然而MoS2作为析氢材料仍存在一定的问题,其边缘活性位点数量较少,且导电性教差,这均影响了你作为析氢材料性能的发挥。提高MoS2的活性主要有两个思路:增加活性位点的数目与活性;增强电极和催化剂之间的电子输运。
发明内容
为解决上述问题,本发明公开了一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP及其制备方法,采用原子层沉积方法得到的MoS2可以有效的提供丰富的活性位点,而基底碳纤维纸的选用和电沉积后的金纳米颗粒修饰,均有效的提高了催化剂的导电性能,极大的增强了该三维复合催化剂的析氢性能。
为达到上述目的,本发明的技术方案如下:
一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP的制备方法,采用原子层沉积和电沉积两种方法,通过两步在碳纤维纸上制备出所述的三维复合催化剂Au NPs/MoS2/CFP。
上述Au NPs/MoS2/CFP复合催化剂的制备包括以下步骤:
1、基底CFP的清洗与亲水性处理
将CFP裁剪成1×1cm2大小,依次用丙酮、无水乙醇和去离子水清洗20min,将清洗好的CFP在烘箱中60°下干燥;取清洗并干燥后的CFP放入等离子表面处理机中,用18W功率的氧气等离子体活化15min,从而使CFP基底变的亲水;
2、采用原子层沉积方法,在CFP基底上进行MoS2的生长制造
将基底CFP放入ALD装置腔体内,安装钼源和硫源;利用载气N2将MoCl5送入反应腔体内,使其通过化学吸附沉积在CFP表面;再利用N2将H2S送入ALD反应腔体中,使H2S通过化学吸附沉积在MoCl5表面并与之反应生成MoS2;重复多次后,可得到生长在CFP上的大面积,质量均匀的制定层数的二硫化钼薄膜;
3、采用电沉积的方法,对MoS2/CFP进行金纳米颗粒修饰
将生长过MoS2后的CFP作为工作电极浸泡在0.1mol/L KNO3质量分数为0.1%的HAuCl4溶液中,用I-t电沉积法进行金纳米颗粒的电沉积修饰;电沉积结束后,取出CFP,用去离子水反复冲洗并干燥,得到Au NPs/MoS2/CFP复合催化剂。
本发明的有益效果是:
(1)本发明所述的复合催化剂为原子层沉积和电沉积两步结合制备的,制造工艺清晰简单,易于操作且可重复性好。
(2)本发明所述的复合催化剂材料生长均匀,具有较好的导电性能和丰富的活性位点,具有185mV较低的析氢起始电位和58mV/dec的Tafel斜率,具有高效的析氢性能。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是Au NPs/MoS2/CFP复合催化剂的制备过程示意图。
图2是按实施例2制备得到的MoS2/CFP不同倍率下的SEM图像。
图3是按实施例2制备得到的Au NPs/MoS2/CFP不同倍率下的SEM图像。
图1中 1.预处理后的碳纤维基底(CFP),2.原子层沉积腔体(ALD),3.经过ALD生长MoS2后的CFP(MoS2/CFP),4.三电极体系电解池,电化学工作站为上海辰华公司的CHI660E,5.经过电沉积金纳米颗粒后的MoS2/CFP(Au NPs/MoS2/CFP)。
具体实施方式
下面结合附图和具体实施方式,进一步阐明本发明,应理解下述具体实施方式仅用于说明本发明而不用于限制本发明的范围。
实施例1:
对碳纤维纸进行清洗干燥后未进行Plasma预处理,以六羰基钼和硫化氢作为原子层沉积的前驱体,在CFP上进行单少层二硫化钼的生长,随后放入电解质溶液中,进行金纳米颗粒的沉积修饰,对产物进行去离子水反复冲洗,烘干,最终得到三维结构的Au NPs/MoS2/CFP复合催化剂。
本实例的碳纤维纸前期未进行Plasma的亲水性处理,最终产物观察可知负载在碳纤维纸上的MoS2材料较少,生长样品均匀性较差,后期的金纳米颗粒结合性也较差,析氢性能也较差。
实施例2:
对碳纤维纸进行清洗干燥后用18W功率的氧气等离子体活化15~30min,随后,以六羰基钼和硫化氢作为原子层沉积的前驱体,在CFP上进行单少层二硫化钼的生长,生长10个循环。随后放入电解质溶液中,进行金纳米颗粒的沉积修饰,对产物进行去离子水反复冲洗,烘干,最终得到三维结构的Au NPs/MoS2/CFP复合催化剂。
本实例的碳纤维纸上MoS2的原子层沉积生长循环次数为10次,产物观察可知负载在碳纤维纸上的MoS2相对均匀但是较少,析氢反应的活性位点较少,析氢性能一般。
实施例3:
对碳纤维纸进行清洗干燥后用18W功率的氧气等离子体活化15~30min,随后,以六羰基钼和硫化氢作为原子层沉积的前驱体,在CFP上进行单少层二硫化钼的生长,生长100个循环。随后放入电解质溶液中,进行金纳米颗粒的沉积修饰,对产物进行去离子水反复冲洗,烘干,最终得到三维结构的Au NPs/MoS2/CFP复合催化剂。
本实例的碳纤维纸上MoS2的原子层沉积生长循环次数为100次,产物观察可知负载在碳纤维纸上的MoS2相对均匀且较为丰富,析氢反应的活性位点丰富,金纳米颗粒结合紧密,析氢性能较好。
本发明具有以下优点:
首先,本发明的制备方法简便且可重复性好,通过原子层沉积和电沉积两步制备出AuNPs/MoS2/CFP三维析氢复合材料,该结构设计不仅可以通过MoS2提供丰富的析氢活性位点,更是通过电沉积金纳米颗粒的修饰提高了其导电性,使其析氢活性可以充分的发挥,显著的改善了其电催化性能。最后,本发明通过结合两步沉积方法构筑三维复合材料的方法可重复性好且操作简单,可用于大规模生产制造,使用前景广泛。
本发明方案所公开的技术手段不仅限于上述实施方式所公开的技术手段,还包括由以上技术特征任意组合所组成的技术方案。
Claims (6)
1.一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP,包括碳纤维管基底、二硫化钼单少层薄膜、金纳米颗粒单少层薄膜,其特征在于,所述二硫化钼单少层薄膜均匀的生长在碳纤维基底管壁表面,金纳米颗粒单少层薄膜均匀的覆盖在二硫化钼单少层薄膜表面,两种薄膜材料与基底之间依靠范德华力构筑得到Au NPs/MoS2/CFP复合催化剂,构成一个整体。
2.一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP的制备方法,其特征在于,包括以下步骤:
(1)将碳纤维纸清洗并烘干后,做Plasma预处理改善其亲疏水性,作为原子层沉积时使用的基底放入原子层沉积装置腔体中;
(2)对原子层装置装载MoCl5源瓶和H2S源瓶分别作为二硫化钼的钼源和硫源,在碳纤维纸上进行单少层二硫化钼的生长;
(3)将原子层沉积过MoS2后的CFP放入电解质溶液中,利用I-t电沉积法对其进行金纳米颗粒的沉积修饰,修饰结束后,使用去离子水反复冲洗,烘干,最终得到三维结构的Au NPs/MoS2/CFP复合催化剂。
3.根据权利要求2所述的一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP的制备方法,其特征在于,所述步骤(1)中,碳纤维纸预先依次用丙酮、无水乙醇及去离子水超声清洗20min,用18W功率的氧气等离子体活化15min,从而改善其亲水性能。
4.根据权利要求2所述的一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP的制备方法,其特征在于,所述步骤(2)中,钼源为五氯化钼或六羰基钼,硫源为硫化氢。
5.根据权利要求2所述的一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP的制备方法,其特征在于,所述步骤(3)中,电解质为在0.1mol/L KNO3质量分数为0.1%的HAuCl4溶液,电沉积纳米金时间为50~100s。
6.根据权利要求2所述的一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP的制备方法,其特征在于,其析氢起始电位为185mV。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811159682.5A CN109136984A (zh) | 2018-09-30 | 2018-09-30 | 一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811159682.5A CN109136984A (zh) | 2018-09-30 | 2018-09-30 | 一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109136984A true CN109136984A (zh) | 2019-01-04 |
Family
ID=64814213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811159682.5A Pending CN109136984A (zh) | 2018-09-30 | 2018-09-30 | 一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109136984A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111965226A (zh) * | 2020-08-19 | 2020-11-20 | 中南大学 | 用于检测刀豆蛋白a的生物传感器及其制备方法和应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104593814A (zh) * | 2015-02-12 | 2015-05-06 | 重庆市环境科学研究院 | MoS2修饰硅纳米线阵列光电化学析氢电极及制备方法和基于该电极的电极体系 |
CN104630820A (zh) * | 2015-02-12 | 2015-05-20 | 重庆市环境科学研究院 | 金属银致电导增强的二硫化钼修饰硅纳米线阵列光电化学析氢电极的制备方法 |
CN104630821A (zh) * | 2015-02-12 | 2015-05-20 | 重庆市环境科学研究院 | 基于MoS2和Ag修饰硅纳米线阵列光电化学析氢电极及其应用 |
CN105780049A (zh) * | 2016-04-20 | 2016-07-20 | 华中科技大学 | 一种痕量铂修饰硫化钼高效析氢催化剂及其制备方法 |
CN107338422A (zh) * | 2017-06-26 | 2017-11-10 | 东南大学 | 一种原子层沉积二硫化钼薄膜的方法 |
-
2018
- 2018-09-30 CN CN201811159682.5A patent/CN109136984A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104593814A (zh) * | 2015-02-12 | 2015-05-06 | 重庆市环境科学研究院 | MoS2修饰硅纳米线阵列光电化学析氢电极及制备方法和基于该电极的电极体系 |
CN104630820A (zh) * | 2015-02-12 | 2015-05-20 | 重庆市环境科学研究院 | 金属银致电导增强的二硫化钼修饰硅纳米线阵列光电化学析氢电极的制备方法 |
CN104630821A (zh) * | 2015-02-12 | 2015-05-20 | 重庆市环境科学研究院 | 基于MoS2和Ag修饰硅纳米线阵列光电化学析氢电极及其应用 |
CN105780049A (zh) * | 2016-04-20 | 2016-07-20 | 华中科技大学 | 一种痕量铂修饰硫化钼高效析氢催化剂及其制备方法 |
CN107338422A (zh) * | 2017-06-26 | 2017-11-10 | 东南大学 | 一种原子层沉积二硫化钼薄膜的方法 |
Non-Patent Citations (1)
Title |
---|
LEI LIU ET AL.: "Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition", 《NANOTECHNOLOGY》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111965226A (zh) * | 2020-08-19 | 2020-11-20 | 中南大学 | 用于检测刀豆蛋白a的生物传感器及其制备方法和应用 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105251513B (zh) | 碳纳米管/过渡金属化合物复合材料的电沉积制备方法 | |
CN106011926B (zh) | 一种钴基多级纳米复合结构电解水制氧电催化剂及其制备方法 | |
Jin et al. | Boosting the electrocatalytic urea oxidation performance by amorphous–crystalline Ni-TPA@ NiSe heterostructures and mechanism discovery | |
CN108439549B (zh) | 一种阵列结构过渡金属硒化物电极的制备及其在电解水中的应用 | |
CN107362812B (zh) | 一种硒硫化铼复合二维材料、制备方法及其应用 | |
CN107213908A (zh) | 一种三硫化四钴纳米空心管@泡沫镍复合阵列材料、制备方法及其应用 | |
CN106669739A (zh) | 一种过渡金属硫化物/碳纳米管复合材料及其制备方法与应用 | |
CN104911639B (zh) | 一种负载型银纳米网及其制备方法和应用 | |
CN109954503A (zh) | 一种硒化镍和三元硒化镍铁复合电催化剂及制备方法和应用 | |
CN108823597A (zh) | 退火法制备氮掺杂的硫化镍析氢催化剂的方法及其应用 | |
CN110117046A (zh) | 一种绿色电芬顿阴极的制备方法和应用 | |
CN105355462B (zh) | 一种δ-MnO2厚膜赝电容器电极的制备方法及其应用 | |
Zhao et al. | Growth of Ni/Mo/Cu on carbon fiber paper: an efficient electrocatalyst for hydrogen evolution reaction | |
CN106915829A (zh) | 碳纤维电极及其制备方法、双极室生物电化学设备 | |
CN111939940A (zh) | 钌基催化剂及其制备方法和应用 | |
CN102140660A (zh) | 超声辅助TiO2/Ag3PO4复合纳米管阵列材料的电化学制备方法 | |
CN107904570B (zh) | 一种制备镍纳米粒子-石墨烯-泡沫镍材料的方法 | |
CN107394212B (zh) | 一种三维多孔电极、其制备方法及应用 | |
CN109136982A (zh) | 通过牺牲对电极合成纳米复合材料的方法及其在电解水催化剂中的应用 | |
CN109136984A (zh) | 一种用于高效析氢的三维复合催化剂Au NPs/MoS2/CFP及其制备方法 | |
Sano et al. | Direct synthesis of carbon nanotubes on stainless steel electrode for enhanced catalyst efficiency in a glucose fuel cell | |
CN108273524B (zh) | 一种硫属化合物与过渡金属修饰的碳复合材料及其制备方法与应用 | |
CN112624176A (zh) | 一种富含氧空位的CuO纳米片及其制备方法和应用 | |
CN104907068A (zh) | 一种阶梯状Pt-Au核壳结构催化剂的制备方法 | |
CN110306199B (zh) | 一种二氧化碳电催化还原薄膜及其制备方法与应用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190104 |