CN109117385A - A kind of correlation junk data recovery method - Google Patents
A kind of correlation junk data recovery method Download PDFInfo
- Publication number
- CN109117385A CN109117385A CN201810806251.7A CN201810806251A CN109117385A CN 109117385 A CN109117385 A CN 109117385A CN 201810806251 A CN201810806251 A CN 201810806251A CN 109117385 A CN109117385 A CN 109117385A
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- Prior art keywords
- flash
- flash memory
- correlation
- valid data
- memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
Abstract
The invention discloses a kind of correlation junk data recovery methods, chip and multiple flash memories are controlled including memory, memory, which controls, is equipped with flash memory command control device, flash memory logical address mapped physical address table, flash block valid data table, data buffer zone and multiple correlation flash memory valid data tables in chip, memory controls chip and connects multiple flash memories, the present invention passes through the flash memory valid data table of relationship type, multiple regions are divided for a flash block, and then accelerate to find the speed of valid data.The Hash memory pages for quickly finding the garbage reclamation, move flash data.Significantly reduce the time of garbage reclamation.
Description
Technical field
The present invention relates to flash memory technology field, specially a kind of correlation junk data recovery method.
Background technique
Flash memory is the memory device of non-deorienting, can save data.Lost data after electric power will not be lost again, it is common
There are the three-level unit (TLC) of three bits of storage, multi-level unit (MLC) flash memory and a single stage unit of two bits
(SLC) flash memory, when the bit number stored in unit is more, capacity is also bigger.
It since flash memory is written after data cannot repeat that data are written again, it is necessary to write using additional flash block arrangement
The data entered, this process are known as flash memory garbage reclamation.There are three types of situation, the first seed types to be known as Exchange rings for garbage reclamation, newly
Flash data replace old flash block completely；Second of type is partial replacement mechanism, and new data flash memory block only has part
It needs to obtain data by old flash block and supply；Third seed type is to be unable to Exchange rings, and newly generated data flash memory block is whole
Data content all takes out from the flash block in several Geju City.First kind full blast, third type need to spend most time and
Cost.
In order to make flash memory have efficient effective utilization, a flash translation layer (FTL) is needed to realize in flash memory on flash chip
One Virtual Block Device, the main physical address for logical address being mapped to through mapping table flash memory.According to second and third
The garbage reclamation mechanism needs of type are cracking to look for valid data in block, moves in new flash block.Conventional method must
After each position in block need being read, mapping table is compared, finds out and whether meets mapping table content, judge valid data or nothing
Imitate data.This mode spends a large amount of read access time, influences whole efficiency.Traditional approach notes down needs using valid data table
The flash block of garbage reclamation.But flash chip manufacturing process progress, the Hash memory pages in single a flash block are more and more, only benefit
It is recorded with valid data table, although the flash block of minimum valid data can be found, can not accurately be defined using position.
A large amount of search time is still spent to find the position of valid data.
The present invention proposes the flash memory valid data table of a correlation, promotes the efficiency of search.Reduce flash memory garbage reclamation
Time.
Summary of the invention
The purpose of the present invention is to provide a kind of correlation junk data recovery methods, to solve to mention in above-mentioned background technique
Out the problem of.
To achieve the above object, the invention provides the following technical scheme: a kind of correlation junk data recovery method, including
Memory controls chip and multiple flash memories, is equipped with flash memory command control device, flash memory logically in the memory control chip
Location mapped physical address table, flash block valid data table, data buffer zone and multiple correlation flash memory valid data tables, it is described
Memory controls chip and connects multiple flash memories；Multiple correlation flash memory valid data tables include the first correlation flash memory valid data
Table, the second correlation flash memory valid data table, third correlation flash memory valid data table, N correlation flash memory valid data table,
N is the integer greater than 3；The memory control chip connects host.
Preferably, multiple flash memories include the first flash memory, the second flash memory, third flash memory, M flash memory, and M is the integer greater than 3,
Each flash memory has 1024 blocks, and each piece has 256 pages, and each page has 32 sectors to be composed.
Preferably, a kind of correlation junk data recovery method, comprising the following steps:
A, the data information to be written is received from host side, configuring one according to the flash block in memory control chip can write
Physical address；
B, by reading old physical address in flash memory logical address mapped physical address table, calculating is which flash block and sudden strain of a muscle
Page is deposited, corresponding flash memory counter in flash block valid data table and correlation flash memory valid data table is subtracted 1；
C, new physical address is updated into flash memory logical address mapped physical address table；
D, flash block and Hash memory pages are calculated by new physical address, by flash block valid data table and correlation flash memory valid data
Corresponding flash memory block counter adds 1 in table.
Compared with prior art, the beneficial effects of the present invention are: the present invention passes through the flash memory valid data table of relationship type, it is
One flash block divides multiple regions, and then accelerates to find the speed of valid data.Quickly find the flash memory of the garbage reclamation
Page, moves flash data.Significantly reduce the time of garbage reclamation.
Detailed description of the invention
Fig. 1 is invention's principle block diagram；
Fig. 2 is flow chart of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution: a kind of correlation junk data recovery method, including storage
Device controls chip 1 and multiple flash memories, is equipped with flash memory command control device 2, flash memory logical address in the memory control chip 1
Mapped physical address table 3, flash block valid data table 4, data buffer zone 5 and multiple correlation flash memory valid data tables, institute
It states memory control chip 1 and connects multiple flash memories；Multiple correlation flash memory valid data tables include that the first correlation flash memory is effective
Tables of data 6, the second correlation flash memory valid data table 7, third correlation flash memory valid data table 8, N correlation flash memory are effective
Tables of data, N are the integer greater than 3；The memory control chip 1 connects host 9；Multiple flash memories include the first flash memory 10, the
Two flash memories 11, third flash memory 12, M flash memory, M are the integer greater than 3, and each flash memory has 1024 blocks, and each piece has 256
Page, each page have 32 sectors to be composed.
There is a flash memory command control device in memory control chip, instruction control can be issued through this device and dodged
Deposit chip.One for storing the buffer area of data, a flash memory logical address mapped physical address table, all write-ins sudden strains of a muscle of record
Deposit interior address corresponding relationship.A flash block valid data table, M parts of correlation flash memory valid data tables, M are more than or equal to 1
Positive integer, as unit of O Hash memory pages, O is positive integer greater than 1, it is assumed that flash block is had 256 Hash memory pages, by flash memory
Page is cut to quarter, and each flash block has four parts of correlation flash memory valid data tables, and first part is to note down having for 0 ~ 63 Hash memory pages
Data, second point of valid data for representing 64 ~ 127 Hash memory pages are imitated, third part is the valid data of 128 ~ 191 Hash memory pages, finally
Portion is the valid data of 192 ~ 255 Hash memory pages of record.Each flash block and Hash memory pages valid data table have a counter note
The valid data in flash area are recorded, when a data are written in flash block, corresponding counter is added 1, and substituted number
Subtract 1 according to existing flash memory block counter.Flash block is represented when counter is zero can erase recycling.
As shown in Fig. 2, in the present invention, a kind of correlation junk data recovery method, comprising the following steps:
A, the data information to be written is received from host side, configuring one according to the flash block in memory control chip can write
Physical address；
B, by reading old physical address in flash memory logical address mapped physical address table, calculating is which flash block and sudden strain of a muscle
Page is deposited, corresponding flash memory counter in flash block valid data table and correlation flash memory valid data table is subtracted 1；
C, new physical address is updated into flash memory logical address mapped physical address table；
D, flash block and Hash memory pages are calculated by new physical address, by flash block valid data table and correlation flash memory valid data
Corresponding flash memory block counter adds 1 in table.
When garbage reclamation occurs, the target that one is garbage reclamation is selected from existing flash memory.Have through flash memory
Tables of data is imitated, the least flash block of valid data in flash block can be quickly found.It can be skipped over through Hash memory pages valid data table again
The Hash memory pages region moved is not needed, the Hash memory pages for needing to move directly is searched, moves least legacy data, such as one has
The flash block of page 256 is gathered around there are four Hash memory pages valid data table, and the valid data inside flash block are Hash memory pages 3 and flash memory
Page 200, traditional approach has to just find whole valid data positions after finding the 240th Hash memory pages, utilizes this method
Only first block and the 4th block can be found by Hash memory pages valid data table, only need to find 128 times can find
The data for needing to move.
The present invention passes through the flash memory valid data table of relationship type, is that a flash block divides multiple regions, and then accelerates to look for
To the speed of valid data.The Hash memory pages for quickly finding the garbage reclamation, move flash data.Significantly reduce garbage reclamation
Time.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (3)
1. a kind of correlation junk data recovery method, it is characterised in that: chip (1) and multiple flash memories are controlled including memory,
Be equipped in memory control chip (1) flash memory command control device (2), flash memory logical address mapped physical address table (3),
Flash block valid data table (4), data buffer zone (5) and multiple correlation flash memory valid data tables, the memory control
Chip (1) connects multiple flash memories；Multiple correlation flash memory valid data tables include the first correlation flash memory valid data table (6),
Second correlation flash memory valid data table (7), third correlation flash memory valid data table (8), N correlation flash memory valid data
Table, N are the integer greater than 3；Memory control chip (1) connection host (9).
2. a kind of correlation junk data recovery method according to claim 1, it is characterised in that: multiple flash memories include the
One flash memory (10), the second flash memory (11), third flash memory (12), M flash memory, M are the integer greater than 3, and each flash memory has 1024
Block, each piece has 256 pages, and each page has 32 sectors to be composed.
3. a kind of correlation junk data recovery method according to claim 1, it is characterised in that: the following steps are included:
A, the data information to be written is received from host side, configuring one according to the flash block in memory control chip can write
Physical address；
B, by reading old physical address in flash memory logical address mapped physical address table, calculating is which flash block and sudden strain of a muscle
Page is deposited, corresponding flash memory counter in flash block valid data table and correlation flash memory valid data table is subtracted 1；
C, new physical address is updated into flash memory logical address mapped physical address table；
D, flash block and Hash memory pages are calculated by new physical address, by flash block valid data table and correlation flash memory valid data
Corresponding flash memory block counter adds 1 in table.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810806251.7A CN109117385A (en) | 2018-07-20 | 2018-07-20 | A kind of correlation junk data recovery method |
| PCT/CN2018/105892 WO2020015133A1 (en) | 2018-07-20 | 2018-09-15 | Relational garbage data collection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810806251.7A CN109117385A (en) | 2018-07-20 | 2018-07-20 | A kind of correlation junk data recovery method |
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| Publication Number | Publication Date |
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| CN109117385A true CN109117385A (en) | 2019-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810806251.7A Withdrawn CN109117385A (en) | 2018-07-20 | 2018-07-20 | A kind of correlation junk data recovery method |
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| Country | Link |
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| CN (1) | CN109117385A (en) |
| WO (1) | WO2020015133A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111949200A (en) * | 2019-05-17 | 2020-11-17 | 北京兆易创新科技股份有限公司 | Memory and control method and control device thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100470677C (en) * | 2004-07-30 | 2009-03-18 | 深圳市朗科科技股份有限公司 | Method for increasing speed of writing data into flash memory disk |
| CN101833510B (en) * | 2010-03-29 | 2012-10-10 | 清华大学 | Address translation method for flash storage FTL |
| CN102279815A (en) * | 2010-06-13 | 2011-12-14 | 宇瞻科技股份有限公司 | Flash-memory-based storage device and data writing method thereof |
| CN103176916B (en) * | 2013-03-07 | 2016-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | The address conversion method of flash memory and flash memory |
| US9563551B2 (en) * | 2013-06-20 | 2017-02-07 | Silicon Motion, Inc. | Data storage device and data fetching method for flash memory |
-
2018
- 2018-07-20 CN CN201810806251.7A patent/CN109117385A/en not_active Withdrawn
- 2018-09-15 WO PCT/CN2018/105892 patent/WO2020015133A1/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111949200A (en) * | 2019-05-17 | 2020-11-17 | 北京兆易创新科技股份有限公司 | Memory and control method and control device thereof |
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| WO2020015133A1 (en) | 2020-01-23 |
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