CN109112458A - A kind of regeneration technology preprocess method of dry etching lower electrode - Google Patents
A kind of regeneration technology preprocess method of dry etching lower electrode Download PDFInfo
- Publication number
- CN109112458A CN109112458A CN201811148803.6A CN201811148803A CN109112458A CN 109112458 A CN109112458 A CN 109112458A CN 201811148803 A CN201811148803 A CN 201811148803A CN 109112458 A CN109112458 A CN 109112458A
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- China
- Prior art keywords
- lower electrode
- epoxide resin
- resin vacuum
- vacuum glue
- dry etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Insulators (AREA)
Abstract
Present invention discloses a kind of regeneration technology preprocess methods of dry etching lower electrode, it is characterised in that: lower electrode is put into baking oven and dries by step 1；Ceramic tube in step 2, cleaning lower electrode；Step 3, ceramic inside pipe wall and the upper surface being uniformly coated in epoxide resin vacuum glue on lower electrode；Lower electrode is put into baking oven and dries by step 4；The epoxide resin vacuum glue that step 5, polishing solidify；Step 6 carries out blasting treatment to the epoxide resin vacuum glue after polishing；Step 7 carries out plasma spraying to lower electrode.The advantage of the invention is that facilitating easy to operate, the effect of plasma spraying can greatly be improved, guarantees the smooth progress of entire production procedure.
Description
Technical field
The present invention relates to the regeneration technologies of lower electrode.
Background technique
Need to carry out one of program dry ecthing (dry etching) in the production process of liquid crystal display panel.Dry etching is exactly in simple terms will
Specific gas is placed under low-pressure state and imposes voltage, is excited into plasma, specific film layer is chemically etched and
Ion bombardment reaches a kind of mode of removal film layer.
The important component needed in dry carving technology is exactly lower electrode.Lower electrode is an aluminium alloy or stainless steel
There are helium hole, the hole lift pin and the hole DCport in the huge metal plate of area, surface made of expecting, this some holes is by one by one
Ceramic tube is constituted.
Presently, there are the problem of it is as follows:
It needs to carry out plasma spraying in metal substrate and ceramic tube upper end when lower electrode is regenerated completely, makes its table
Aluminum oxide powder is adhered in face, but due to the smooth roughness very little of ceramic surface, ceramic tube is very thin to be unable to sandblasting, Er Qietao
Porcelain tube is more slightly lower than substrate surface, and direct spraying poor effect influences subsequent technique and carries out.
Lower electrode has to lift using driving when spraying and being machined grinding because size is very huge
Transport damages coating, and it is difficult to spray repairing, it may be necessary to shell again during transportation it is possible that colliding with
From whole coatings, then spraying.
Summary of the invention
The technical problem to be solved by the present invention is to realize that one kind can be improved the spraying of lower electrode plasma spray coating process
The preprocess method of effect.
To achieve the goals above, the technical solution adopted by the present invention are as follows: a kind of regeneration technology of dry etching lower electrode is pre-
Processing method, it is characterised in that:
Lower electrode is put into baking oven and dries by step 1；
Ceramic tube in step 2, cleaning lower electrode；
Step 3, ceramic inside pipe wall and the upper surface being uniformly coated in epoxide resin vacuum glue on lower electrode；
Lower electrode is put into baking oven and dries by step 4；
The epoxide resin vacuum glue that step 5, polishing solidify；
Step 6 carries out blasting treatment to the epoxide resin vacuum glue after polishing；
Step 7 carries out plasma spraying to lower electrode.
For there is the lower electrode processing method of defect as follows:
The step 2 also needs to clean lower electrode defect；
The step 3, which also needs to apply lower electrode defect, spreads epoxide resin vacuum glue.
Step 1 drying time 2-3 hours, 55-60 DEG C of drying temperature.
The clean method of the step 2: hanging out baking oven for lower electrode, using air gun by defect and each
The inner wall and the dust around ceramic tube of ceramic tube are blown off, then using speckling with isopropanol cotton swab for defect, and it is each
Wiped clean around ceramic inside pipe wall and ceramic tube.
In the step 3, the epoxide resin vacuum glue for being applied to ceramic tube upper surface is higher than lower electrode surface, is applied to
The epoxide resin vacuum glue of lower electrode defect is higher than lower electrode surface.
Step 4 drying time 1.5-2 hours, 55-60 DEG C of drying temperature.
In the step 5, lower electrode table is still higher than after being applied to the epoxide resin vacuum glue polishing of ceramic tube upper surface
Face 50-100um is still higher than lower electrode surface 50- after being applied to the epoxide resin vacuum glue polishing of lower electrode defect
100um。
Whether step 6 sandblasting is had after completing using the epoxide resin vacuum glue surface that bright light torch is observed after sandblasting
Stomata, if there is then return step 2, if not thening follow the steps 7.
The advantage of the invention is that facilitating easy to operate, it can greatly improve the effect of plasma spraying, guarantee entire
The smooth progress of production procedure.
Detailed description of the invention
The content of width attached drawing every in description of the invention expression is briefly described below:
Fig. 1 is to smear epoxide resin vacuum glue schematic diagram.
Specific embodiment
A kind of regeneration technology preprocess method of dry etching lower electrode is as follows:
Lower electrode is put into baking oven first and is dried 2-3 hours, baking oven is arranged 55-60 DEG C and preheats product；
Then product is hung out and is blown off the dust in helium hole, the hole lift pin using CDA air gun, then use cotton swab
Isopropanol is speckled with by (ceramic tube upper surface and upper electrode and ceramic tube junction around the inner wall and ceramic tube of ceramic tube
Position) wiped clean；
Then a kind of epoxide resin vacuum glue is deployed, glue is stirred rapidly to latex using bamboo tooth pick in allocation process
Shape；Then the epoxide resin vacuum glue being stirred uniformly is coated at helium hole, the hole lift pin and DCport, pays attention to gluing
Shi Bixu eminence matrix, ceramic tube is mounted on lower electrode using heavy mode, therefore the upper surface of ceramic tube will be lower than
The surface of lower electrode；
It is also first to be blown off the dust of breakage using CDA air gun for the coating damage notch in lower electrode, then
Surrounding wiped clean of the isopropanol by breakage is speckled with using cotton swab；
The epoxide resin vacuum glue being stirred equally uniformly is coated in the breakage of lower electricity；
The above-mentioned product for smearing epoxide resin vacuum glue is put into baking oven and is arranged 55-60 DEG C drying 1.5-2 hours；
Then the product for smearing epoxide resin vacuum glue has been coagulated from baking oven using the sand paper polishing of white 60#
Consolidate glue, it is than surrounding substrate 50-100um more slightly higher after so that it is polished；
The product that polishing has been got well sprays glue sandblasting of the 100# white fused alumina to smearing using manual sand-blasting machine, makes it have one
Fixed roughness；
Sandblasting uses the vacuum glue after bright light torch observation sandblasting after completing, check whether its surface has stomata, if
Have gluing to restart again；
If not having stomata after observation, the plasma spraying of next step can be continued.
The advantages of method structure is improved
Using epoxide resin vacuum glue smear helium hole and the hole lift pin can be improved helium hole, the hole lift pin and
The roughness on surface at DCport, increases the bonding force of coating；
Helium hole and the hole lift pin can be eliminated by smearing helium hole and the hole lift pin using epoxide resin vacuum glue
Difference in height between ceramic tube and base material reduces the thickness of spray-on coating, reduces consumptive material；
DCport and base material can be sealed and fixed at DCport by being smeared using epoxide resin vacuum glue；
The breakage of coating can be made to be repaired using the breakage that epoxide resin vacuum glue smears lower electricity, without spraying again
It applies, saves deadline and the consumptive material of half；
This epoxide resin vacuum glue homogeneous modulation can be used, efficient and convenient
Epoxide resin vacuum glue has the performances such as excellent solvent resistant, vibration resistance, low temperature resistant, high temperature resistant, ageing-resistant, bonding
Property is excellent to most of material contacts very well, such as metal, ceramics and glass bonding are all very perfect；
Epoxide resin vacuum glue -45 DEG C to 200 DEG C of operating temperature under atmospheric pressure can seal leak rate less than 5.2E-
The leak of 3atm.cc/s (5.2E-4pa.m3/s) can satisfy the working environment of lower electrode, not influence the property of lower electrode
Energy.
The present invention is exemplarily described above in conjunction with attached drawing, it is clear that the present invention implements not by aforesaid way
Limitation, as long as the improvement for the various unsubstantialities that the inventive concept and technical scheme of the present invention carry out is used, or without changing
It is within the scope of the present invention into the conception and technical scheme of the invention are directly applied to other occasions.
Claims (8)
1. a kind of regeneration technology preprocess method of dry etching lower electrode, it is characterised in that:
Lower electrode is put into baking oven and dries by step 1；
Ceramic tube in step 2, cleaning lower electrode；
Step 3, the outer wall for contacting the ceramic tube that epoxide resin vacuum glue is uniformly coated on lower electrode with aluminum substrate and on
End face；
Lower electrode is put into baking oven and dries by step 4；
The epoxide resin vacuum glue that step 5, polishing solidify；
Step 6 carries out blasting treatment to the epoxide resin vacuum glue after polishing；
Step 7 carries out plasma spraying to lower electrode.
2. the regeneration technology preprocess method of dry etching lower electrode according to claim 1, it is characterised in that: scarce for having
The lower electrode processing method of damage is as follows:
The step 2 also needs to clean lower electrode defect；
The step 3, which also needs to apply lower electrode defect, spreads epoxide resin vacuum glue.
3. the regeneration technology preprocess method of dry etching lower electrode according to claim 2, it is characterised in that: the step
1 drying time 2-3 hours, 55-60 DEG C of drying temperature.
4. the regeneration technology preprocess method of dry etching lower electrode according to claim 2, it is characterised in that: the step
2 clean method: hanging out baking oven for lower electrode, using air gun by defect and the inner wall and pottery of each ceramic tube
Dust around porcelain tube is blown off, then using speckling with isopropanol cotton swab for defect and each ceramic inside pipe wall and ceramics
Wiped clean around pipe.
5. the regeneration technology preprocess method of dry etching lower electrode according to claim 2, it is characterised in that: the step
In 3, the epoxide resin vacuum glue for being applied to ceramic tube upper surface is higher than lower electrode surface, is applied to lower electrode defect
Epoxide resin vacuum glue be higher than lower electrode surface.
6. the regeneration technology preprocess method of dry etching lower electrode according to claim 2, it is characterised in that: the step
4 drying times 1.5-2 hours, 55-60 DEG C of drying temperature.
7. the regeneration technology preprocess method of dry etching lower electrode according to claim 2, it is characterised in that: the step
In 5, it is still higher than lower electrode surface 50-100um after being applied to the epoxide resin vacuum glue polishing of ceramic tube upper surface, is applied to
Lower electrode surface 50-100um is still higher than after the epoxide resin vacuum glue polishing of lower electrode defect.
8. the regeneration technology preprocess method of dry etching lower electrode according to claim 2, it is characterised in that: the step
Whether there is stomata using the epoxide resin vacuum glue surface that bright light torch is observed after sandblasting after 6 sandblastings completion, if there is then returning
Step 2 is returned, if not thening follow the steps 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811148803.6A CN109112458B (en) | 2018-09-29 | 2018-09-29 | Regeneration process pretreatment method for dry etching lower electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811148803.6A CN109112458B (en) | 2018-09-29 | 2018-09-29 | Regeneration process pretreatment method for dry etching lower electrode |
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| Publication Number | Publication Date |
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| CN109112458A true CN109112458A (en) | 2019-01-01 |
| CN109112458B CN109112458B (en) | 2020-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811148803.6A Active CN109112458B (en) | 2018-09-29 | 2018-09-29 | Regeneration process pretreatment method for dry etching lower electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113667919A (en) * | 2021-08-23 | 2021-11-19 | 苏州众芯联电子材料有限公司 | Regeneration process for lower electrode of LCD and AMOLED dry etching |
| CN114326229A (en) * | 2022-01-06 | 2022-04-12 | 重庆臻宝实业有限公司 | Lower electrode structure capable of effectively preventing Arcing and mounting method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205789866U (en) * | 2016-06-21 | 2016-12-07 | 昆山国显光电有限公司 | The lower electrode of Drycorrosion apparatus and Drycorrosion apparatus |
| CN107630185A (en) * | 2017-09-15 | 2018-01-26 | 芜湖通潮精密机械股份有限公司 | A kind of dry etching board inside panel renovation process |
-
2018
- 2018-09-29 CN CN201811148803.6A patent/CN109112458B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205789866U (en) * | 2016-06-21 | 2016-12-07 | 昆山国显光电有限公司 | The lower electrode of Drycorrosion apparatus and Drycorrosion apparatus |
| CN107630185A (en) * | 2017-09-15 | 2018-01-26 | 芜湖通潮精密机械股份有限公司 | A kind of dry etching board inside panel renovation process |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113667919A (en) * | 2021-08-23 | 2021-11-19 | 苏州众芯联电子材料有限公司 | Regeneration process for lower electrode of LCD and AMOLED dry etching |
| CN114326229A (en) * | 2022-01-06 | 2022-04-12 | 重庆臻宝实业有限公司 | Lower electrode structure capable of effectively preventing Arcing and mounting method thereof |
| CN114326229B (en) * | 2022-01-06 | 2022-09-20 | 重庆臻宝实业有限公司 | Lower electrode structure capable of effectively preventing Arcing and mounting method thereof |
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| Publication number | Publication date |
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| CN109112458B (en) | 2020-11-20 |
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