CN109103283B - Transverse germanium detector structure and preparation method - Google Patents
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 138
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 138
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 54
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 54
- 230000003287 optical effect Effects 0.000 claims abstract description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 5
- 238000002407 reforming Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention comprises a transverse germanium detector structure and a preparation method thereof, wherein the transverse germanium detector structure is a transverse photodiode and comprises a silicon substrate; a silicon oxide layer is deposited on the upper surface of the silicon substrate; the silicon oxide layer includes a top layer silicon; the germanium layer is formed on the upper surface of the top silicon and comprises a germanium layer main body, a first extending part and a second extending part, wherein the first extending part and the second extending part extend from the germanium layer main body to two sides respectively; and the silicon nitride waveguide is formed above the germanium layer and is of a conical structure. Has the advantages that: through reforming transform germanium layer structure, effectively strengthen the coupling efficiency that silicon nitride waveguide couples to the germanium detector, can realize the effective integration of optical multiplexer and optical demultiplexer and germanium detector, can also be applied to the photoelectric detection field of high optical power and high bandwidth.
Description
Technical Field
The invention relates to the technical field of optical devices, in particular to a transverse germanium detector structure and a preparation method thereof.
Background
The optical multiplexer (mux) and the optical demultiplexer (demux) are one of the most important optical devices in the optoelectronic chip at present, and considering the stability of the operation of the optical multiplexer or the optical demultiplexer, such as the influence of temperature, the shift of the central wavelength of the optical multiplexer and the optical demultiplexer and the deformation of the spectral curve caused by the process conditions, we need to select suitable materials to prepare the optical multiplexer and the optical demultiplexer. Because the influence of the refractive index of silicon nitride (SiN) and silicon oxynitride (SiON) along with the temperature change is far less than that of a silicon (Si) material, SiN or SiON is selected as a material for the optical multiplexer and the optical demultiplexer, in practical application, the tail ends of the optical multiplexer and the optical demultiplexer are connected with a detector (PD) to realize photoelectric conversion, in a common optical module product, the optical multiplexer, the optical demultiplexer and the detector are connected on two separated chips through optical fibers (fiber), the size area of the product is further improved, the complexity of a rear-section light-focusing process is further increased, meanwhile, in a germanium (Ge) detector in the traditional CMOS (Complementary Metal Oxide Semiconductor) process, light is coupled into the Ge detector through a Si waveguide, the Ge detector structure is generally a vertical PIN structure, and the detector structure is not suitable for the application scene of the patent, secondly, for the Ge detector of the traditional CMOS process, the saturation photocurrent is relatively small, and thus the Ge detector cannot be applied to detection of high optical power.
Disclosure of Invention
In view of the above problems in the prior art, a lateral germanium detector structure and a method for fabricating the same are provided.
The specific technical scheme is as follows:
a lateral germanium detector structure, wherein the lateral germanium detector structure is a lateral photodiode, comprising in particular:
a silicon substrate;
a silicon oxide layer deposited on the upper surface of the silicon substrate; the silicon oxide layer comprises thereon:
a top layer of silicon;
the germanium layer comprises a germanium layer main body, a first extension part and a second extension part, wherein the first extension part and the second extension part extend from the germanium layer main body to two sides respectively;
a silicon nitride waveguide formed over the germanium layer, the silicon nitride waveguide having a tapered configuration, the silicon nitride waveguide having a first end and a second end, the first end being smaller than the second end, the silicon nitride waveguide being configured to receive an optical signal and couple the optical signal to the germanium layer, the germanium layer being configured to receive the optical signal and convert the optical signal to an electrical signal.
Preferably, the germanium layer body, the first extension, and the second extension form an integrally formed T-shaped structure of the germanium layer.
Preferably, the germanium layer body, the first extension and the second extension entirely cover the top silicon.
Preferably, the first doping region is doped with N + ions to form an N + first implantation region;
and doping N + + ions in the N + first injection region to form an N + + first injection region.
Preferably, the second doping region is doped with P + ions to form a P + second implantation region;
and doping P + + ions in the P + second injection region to form a P + + second injection region.
Preferably, the thickness of the silicon nitride waveguide is at least 0.2 um;
the width of the first end is 0.1-0.5 um;
the width of second end is 0.5-1.5 um.
Preferably, the predetermined distance between the silicon nitride waveguide and the germanium layer is 0-0.2 um.
A method of fabricating a lateral germanium detector structure for use in any one of the above lateral germanium detector structures, the lateral germanium detector structure being a lateral photodiode, comprising:
providing a silicon substrate, and sequentially forming a silicon oxide layer and a top silicon layer on the silicon substrate;
the preparation method specifically comprises the following steps:
step S1, depositing a silicon oxide layer on the top silicon, opening a process window on the silicon oxide layer, and forming a germanium layer in the process window, wherein the germanium layer includes a germanium layer main body, and a first extension portion and a second extension portion that extend from the germanium layer main body to two sides, respectively;
step S2, doping the first extension portion and the second extension portion respectively to form a first doped region and a second doped region;
step S3, depositing a silicon oxide layer on the germanium layer, and forming a silicon nitride waveguide on the silicon oxide layer, where the silicon nitride waveguide has a tapered structure and has a first end and a second end, and the first end is smaller than the second end;
step S4, depositing a silicon oxide layer on the silicon nitride waveguide, forming a first contact hole and a second contact hole on the silicon oxide layer, where the first contact hole and the second contact hole are respectively located on the upper surfaces of the first doped region and the second doped region;
step S5, filling metal into the first contact hole and the second contact hole respectively to form a first electrode and a second electrode, wherein the first electrode and the second electrode extend upward to form the silicon oxide layer respectively.
Preferably, the germanium layer body, the first extension, and the second extension form an integrally formed T-shaped structure of the germanium layer.
Preferably, the germanium layer body, the first extension and the second extension entirely cover the top silicon.
The technical scheme of the invention has the beneficial effects that: the transverse germanium detector structure is a transverse photodiode structure, the germanium layer structure is improved, and the two sides of the germanium layer are doped respectively, so that the coupling efficiency of the silicon nitride waveguide coupled to the germanium detector is effectively improved, the effective integration of the optical multiplexer, the optical demultiplexer and the germanium detector can be realized, and compared with the germanium detector in the traditional process, the silicon nitride coupled germanium detector can also be applied to the photoelectric detection field with high optical power and high bandwidth.
Drawings
Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
FIG. 1 is a schematic diagram of the overall structure of a preferred embodiment of the lateral germanium detector structure of the present invention;
FIG. 2 is a top view block diagram of a preferred embodiment of the lateral germanium detector structure of the present invention;
FIG. 3 is a schematic diagram of the overall structure of another preferred embodiment of the lateral germanium detector structure of the present invention;
figure 4 is a flow chart of a method of fabricating a lateral germanium detector structure in accordance with the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The invention includes a lateral germanium detector structure, wherein the lateral germanium detector structure is a lateral photodiode, comprising:
a silicon substrate 1;
a silicon oxide layer 2 deposited on the upper surface of the silicon substrate 1; the silicon oxide layer 2 includes thereon:
a top layer of silicon 20;
a germanium layer 21 formed on the top surface of the top silicon layer 20, the germanium layer 21 including a germanium layer main body 21, and a first extension portion 210 and a second extension portion 211 respectively extending from the germanium layer main body 21 to two sides, a first doped region 212 and a second doped region 213 respectively formed on the first extension portion 210 and the second extension portion 211, a first electrode 214 and a second electrode 214 respectively formed on the top surfaces of the first doped region 212 and the second doped region 213, and a silicon oxide layer 2 respectively extending upward from the first electrode 214 and the second electrode 215;
a silicon nitride waveguide 22 formed above the germanium layer 21, the silicon nitride waveguide 22 having a tapered structure, the silicon nitride waveguide 22 having a first end 220 and a second end 221, the first end 220 being smaller than the second end 221, the silicon nitride waveguide 22 being configured to receive an optical signal and couple the optical signal to the germanium layer 21, the germanium layer 21 being configured to receive the optical signal and convert the optical signal into an electrical signal.
Through the technical solution of the above-mentioned lateral germanium detector structure, as shown in fig. 1 and 2, the lateral germanium detector structure is a lateral photodiode structure, a silicon oxide layer 2 is deposited on the upper surface of a silicon substrate 1, the silicon oxide layer 2 includes a top silicon 20, a germanium layer 21 and a silicon nitride waveguide 22, the germanium layer 21 includes a germanium layer main body 21, and a first extension portion 210 and a second extension portion 211 respectively extending from the germanium layer main body 21 to two sides, the germanium layer main body 21, the first extension portion 210 and the second extension portion 211 form an integrally formed germanium layer 21 with a T-shaped structure, a first doped region 212 and a second doped region 213 are respectively formed on the first extension portion 210 and the second extension portion 211, a first electrode 214 and a second electrode 215 are respectively formed on the upper surfaces of the first doped region 212 and the second doped region 213, and the first electrode 214 and the second electrode 215 respectively extend upward out of the silicon oxide layer 2; specifically, N + ions are doped into the first doped region 212 to form an N + first implanted region 212a, and N + + ions are doped into the N + first implanted region 212a to form an N + + first implanted region 212 b; doping the second doping region 213 with P + ions to form a P + second implantation region 213a, and doping the P + second implantation region 213a with P + + ions to form a P + + second implantation region 213 b;
further, a silicon nitride waveguide 22 is formed above the germanium layer 21, wherein a predetermined distance between the silicon nitride waveguide 22 and the germanium layer 21 is set to be 0-0.2um, the silicon nitride waveguide 22 is a tapered structure, a thickness t of the silicon nitride waveguide 22 is set to be at least 0.2um, a width of the first end 220 of the silicon nitride waveguide 22 is set to be 0.1-0.5um, a width of the second end 221 of the silicon nitride waveguide 22 is set to be 0.5-1.5um, the silicon nitride waveguide 22 is configured to receive an optical signal and couple the optical signal to the germanium layer 21, and the germanium layer 21 is configured to receive the optical signal and convert the optical signal into an electrical signal;
furthermore, by modifying the structure of the germanium layer and doping the two sides of the germanium layer respectively, the coupling efficiency of coupling the silicon nitride waveguide to the germanium detector is effectively enhanced, the effective integration of the optical multiplexer, the optical demultiplexer and the germanium detector can be realized, and compared with the germanium detector in the traditional process, the silicon nitride coupled germanium detector can also be applied to the photoelectric detection field with high optical power and high bandwidth.
In a preferred embodiment, as shown in fig. 3, the germanium layer main body 21, the first extension portion 210 and the second extension portion 211 completely cover the top silicon layer 20, a first doped region 212 and a second doped region 213 are formed on the first extension portion 210 and the second extension portion 211, respectively, a first electrode 214 and a second electrode 215 are formed on the upper surfaces of the first doped region 212 and the second doped region 213, respectively, and the first electrode 214 and the second electrode 215 extend upward out of the silicon oxide layer 2, respectively; specifically, N + ions are doped into the first doped region 212 to form an N + first implanted region 212a, and N + + ions are doped into the N + first implanted region 212a to form an N + + first implanted region 212 b; p + ions are doped in the second doping region 213 to form a P + second injection region 213a, and P + + ions are doped in the P + second injection region 213a to form a P + + second injection region 213b, by modifying the structure of the germanium layer 21, the coupling efficiency of coupling the silicon nitride waveguide to the germanium detector is enhanced, the effective integration of the optical multiplexer, the optical demultiplexer and the germanium detector can be realized, and compared with the germanium detector in the conventional process, the silicon nitride coupled germanium detector can also be applied to the photoelectric detection field with high optical power and high bandwidth.
The invention also includes a method for manufacturing a lateral germanium detector structure, applied to any one of the lateral germanium detector structures, wherein the lateral germanium detector structure is a lateral photodiode, comprising:
providing a silicon substrate 1, and sequentially forming a silicon oxide layer 2 and a top silicon layer 20 on the silicon substrate 1;
the preparation method specifically comprises the following steps:
step S1, depositing a silicon oxide layer 2 on the top silicon layer 20, opening a process window (not shown in the figure) on the silicon oxide layer 2, forming a germanium layer 21 in the process window (not shown in the figure), wherein the germanium layer 21 includes a germanium layer body 21, and a first extension portion 210 and a second extension portion 211 respectively extending from the germanium layer body 21 to two sides;
step S2, doping the first extension portion 210 and the second extension portion 211, respectively, to form a first doped region 212 and a second doped region 213;
step S3, depositing a silicon oxide layer 2 on the germanium layer 21, and forming a silicon nitride waveguide 22 on the silicon oxide layer 2, wherein the silicon nitride waveguide 22 has a first end 220 and a second end 221, and the first end 220 is smaller than the second end 221;
step S4, depositing a silicon oxide layer 2 on the silicon nitride waveguide 22, forming a first contact hole (not shown) and a second contact hole (not shown) on the silicon oxide layer 2, wherein the first contact hole (not shown) and the second contact hole (not shown) are respectively located on the upper surfaces of the first doped region 212 and the second doped region 213;
in step S5, metal is filled in the first contact hole (not shown) and the second contact hole (not shown) to form a first electrode 212 and a second electrode 213, wherein the first electrode 212 and the second electrode 213 extend upward to form the silicon oxide layer 2.
Specifically, the method for manufacturing the lateral germanium detector structure is applicable to a silicon nitride coupled germanium detector structure, the silicon nitride coupled germanium detector structure is a lateral photodiode structure, and the manufacturing process is simple, as shown in fig. 4, firstly, a silicon substrate 1 is provided, and a silicon oxide layer 2 and a top silicon 20 are sequentially formed on the silicon substrate 1, wherein the silicon oxide layer 2 is silicon dioxide; depositing a silicon oxide layer 2 on the top silicon layer 20, opening a process window (not shown in the figure) on the silicon oxide layer 2, forming a germanium layer 21 in the process window (not shown in the figure), the germanium layer 21 including a germanium layer body 21, and a first extension portion 210 and a second extension portion 211 respectively extending from the germanium layer body 21 to both sides; doping the first extension portion 210 and the second extension portion 211 respectively to form a first doped region 212 and a second doped region 213;
specifically, the germanium layer main body 21, the first extension portion 210, and the second extension portion 211 form the germanium layer 21 of an integrally molded T-shaped structure, as shown in fig. 1; a germanium layer body 21, a first extension 210 and a second extension 211, which completely cover the top silicon 20, as shown in fig. 3; wherein, the first doping region 212 is doped with N + ions to form an N + first implantation region 212a, and the N + first implantation region 212a is doped with N + + ions to form an N + + first implantation region 212 b; doping the second doping region 213 with P + ions to form a P + second implantation region 213a, and doping the P + second implantation region 213a with P + + ions to form a P + + second implantation region 213 b;
further, a silicon oxide layer 2 is deposited on the germanium layer 21, a silicon nitride waveguide 22 is formed on the silicon oxide layer 2, the silicon nitride waveguide 22 has a tapered structure, the silicon nitride waveguide 22 has a first end 220 and a second end 221, the first end 220 is smaller than the second end 221, and by setting the silicon nitride waveguide 22 to have the tapered structure, the coupling efficiency of the silicon nitride waveguide 22 to the germanium detector is further enhanced;
further, a silicon oxide layer 2 is deposited on the silicon nitride waveguide 22, and a first contact hole (not shown) and a second contact hole (not shown) are formed in the silicon oxide layer 2, wherein the first contact hole (not shown) and the second contact hole (not shown) are respectively located on the upper surfaces of the first doped region 212 and the second doped region 213; the first contact hole (not shown) and the second contact hole (not shown) are filled with metal respectively to form a first electrode 212 and a second electrode 213, and the first electrode 212 and the second electrode 213 extend upward out of the silicon oxide layer 2 respectively.
The technical scheme of the invention has the beneficial effects that: the transverse germanium detector structure is a transverse photodiode structure, the germanium layer structure is improved, and the two sides of the germanium layer are doped respectively, so that the coupling efficiency of the silicon nitride waveguide coupled to the germanium detector is effectively improved, the effective integration of the optical multiplexer, the optical demultiplexer and the germanium detector can be realized, and compared with the germanium detector in the traditional process, the silicon nitride coupled germanium detector can also be applied to the photoelectric detection field with high optical power and high bandwidth.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. The utility model provides a horizontal germanium detector structure which characterized in that, horizontal germanium detector structure is horizontal photodiode, specifically includes:
a silicon substrate;
a silicon oxide layer deposited on the upper surface of the silicon substrate; the silicon oxide layer comprises thereon:
a top layer of silicon;
the germanium layer comprises a germanium layer main body, a first extension part and a second extension part, wherein the first extension part and the second extension part extend from the germanium layer main body to two sides respectively;
a silicon nitride waveguide formed over the germanium layer, the silicon nitride waveguide having a tapered configuration, the silicon nitride waveguide having a first end and a second end, the first end being smaller than the second end, the silicon nitride waveguide being configured to receive an optical signal and couple the optical signal to the germanium layer, the germanium layer being configured to receive the optical signal and convert the optical signal to an electrical signal.
2. The lateral germanium detector structure of claim 1, wherein said germanium layer body, said first extension and said second extension form an integrally formed T-shaped structure of said germanium layer.
3. The lateral germanium detector structure of claim 1, wherein said germanium layer body, said first extension, and said second extension entirely cover said top layer of silicon.
4. The lateral germanium detector structure of claim 1, wherein said first doped region is doped with N + ions to form an N + first implanted region;
and doping N + + ions in the N + first injection region to form an N + + first injection region.
5. The lateral germanium detector structure of claim 1, wherein said second doped region is doped with P + ions to form a P + second implanted region;
and doping P + + ions in the P + second injection region to form a P + + second injection region.
6. The lateral germanium detector structure of claim 1, wherein said silicon nitride waveguide has a thickness of at least 0.2 um;
the width of the first end is 0.1-0.5 um;
the width of second end is 0.5-1.5 um.
7. The lateral germanium detector structure of claim 1, wherein the predetermined distance between the silicon nitride waveguide and the germanium layer is 0-0.2 um.
8. A method of manufacturing a lateral germanium detector structure for use in a lateral germanium detector structure according to any of claims 1-7, said lateral germanium detector structure being a lateral photodiode comprising:
providing a silicon substrate, and sequentially forming a silicon oxide layer and a top silicon layer on the silicon substrate;
the preparation method specifically comprises the following steps:
step S1, depositing a silicon oxide layer on the top silicon, opening a process window on the silicon oxide layer, and forming a germanium layer in the process window, wherein the germanium layer includes a germanium layer main body, and a first extension portion and a second extension portion that extend from the germanium layer main body to two sides, respectively;
step S2, doping the first extension portion and the second extension portion respectively to form a first doped region and a second doped region;
step S3, depositing a silicon oxide layer on the germanium layer, and forming a silicon nitride waveguide on the silicon oxide layer, where the silicon nitride waveguide has a tapered structure and has a first end and a second end, and the first end is smaller than the second end;
step S4, depositing a silicon oxide layer on the silicon nitride waveguide, forming a first contact hole and a second contact hole on the silicon oxide layer, where the first contact hole and the second contact hole are respectively located on the upper surfaces of the first doped region and the second doped region;
step S5, filling metal into the first contact hole and the second contact hole respectively to form a first electrode and a second electrode, wherein the first electrode and the second electrode extend upward to form the silicon oxide layer respectively.
9. The method of making a lateral germanium detector structure according to claim 8, wherein said germanium layer body, said first extension and said second extension form an integrally formed T-shaped structure of said germanium layer.
10. The method of claim 8, wherein the germanium layer body, the first extension, and the second extension entirely cover the top silicon.
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