CN109099942A - A kind of photoelectricity modulus conversion chip of integrated silicon-based photodetector - Google Patents
A kind of photoelectricity modulus conversion chip of integrated silicon-based photodetector Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 26
- 230000005622 photoelectricity Effects 0.000 title claims abstract description 22
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000005259 measurement Methods 0.000 claims abstract description 8
- 230000005693 optoelectronics Effects 0.000 claims description 43
- 239000012528 membrane Substances 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 8
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- 238000001914 filtration Methods 0.000 claims description 6
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- 229920003023 plastic Polymers 0.000 claims description 3
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- 238000000034 method Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 230000004044 response Effects 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 9
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- 230000008901 benefit Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
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- 238000011161 development Methods 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
Abstract
The invention discloses a kind of photoelectricity modulus conversion chips of integrated silicon-based photodetector, by Si-based photodetectors, trans-impedance amplifier and analog-digital converter effectively integrate on one chip, effectively by environment light detection, gesture identification, it has been incorporated on same chip close to distance measurement by Si standard technology, and the amplifying circuit and analog to digital conversion circuit of directly connection electric current conversion voltage, simplify assembling process, it can guarantee the reliability of system while reducing interconnection line and system bulk, improve integrated level, promote equipment micromation, enhance the function of chip, achieve the effect that a core is multi-purpose, and it reduces costs to a certain extent, it enables the chip to be widely applied in various small portable electronic devices.
Description
Technical field
The present invention relates to a kind of photoelectricity modulus conversion chip, in particular to a kind of the integration environment light detection, connects gesture identification
The photoelectricity modulus conversion chip of proximity detection.
Background technique
With the diversification of photoelectric sensor, intelligent development, ambient light sensor can detect ambient enviroment light
Variation, can be used for the intelligent automatic regulated of electronic equipment display screen brightness, range sensor can detect the displacement of object, gesture
Sensor is used to detect and identify the variation of gestures direction, can be used for the touch screen function of the smart machines such as mobile phone, plate, enhances
Human-computer interaction.The probe functionality of traditional photoelectric sensing chip is all more discrete, and chip functions are single, if need to realize a variety of
Function then needs multiple chips to be assembled, and causing equipment to occupy, volume is big, and line is complicated.
Summary of the invention
Goal of the invention: it is directed to the above-mentioned prior art, proposes a kind of photoelectricity analog-to-digital conversion core of integrated silicon-based photodetector
Piece is directly prepared in silicon standard technology by the integration environment light detection, gesture identification, close to the photodetector of distance measurement
Come, realizes the integrated Analog-digital circuit chip of photoelectricity.
A kind of technical solution: photoelectricity modulus conversion chip of integrated silicon-based photodetector, comprising: silicon based opto-electronics detection
Device, preamplifier, gradual approaching A/D converter；The Si-based photodetectors include light emitting area and reception area；Institute
Light emitting area is stated equipped with infrared light supply, the reception area setting is arranged by silicon based opto-electronics diode matrix prepared by CMOS technology；
Silicon based opto-electronics diode group for environment light detection is that the cross at center is crossed in silicon based opto-electronics diode matrix column
The silicon based opto-electronics Diode facets of the silicon based opto-electronics diode in region, the cross area are respectively equipped with red filter, blue
Filter membrane, green filter membrane；Silicon based opto-electronics Diode facets other than the cross area are equipped with infrared filtering film, as gesture
Identification and close to distance measurement detection silicon based opto-electronics diode group；The output of the Si-based photodetectors terminates preposition amplification
The input terminal of device, the input terminal of the output termination gradual approaching A/D converter of the preamplifier.
It further, further include digital circuit, the digital circuit is integrated with I2C communications protocol circuit is based on I2C communication
Threshold setting module and digital pulse width modulation circuit.
Further, the Si-based photodetectors integrally use patch plastics fenestration to encapsulate, and pin is distributed in encapsulation
Bottom surface.
Further, the silicon based opto-electronics diode matrix is classified as 3 × 3 arrays, indicates silicon based opto-electronics diode with (i, j)
Position, i=1,2,3, j=1,2,3, (2,2) silicon based opto-electronics Diode facets are respectively equipped with red filter, (1,2) and (3,2) silicon
Base photodiode surface is respectively equipped with blue filter membrane, and (2,1) and (2,3) silicon based opto-electronics Diode facets are respectively equipped with green filter
Film, (1,1), (1,3), (3,1), (3,3) silicon based opto-electronics Diode facets are equipped with the infrared filtering film of wavelength 850nm, described
The infrared light supply in light emitting area is the infrared LED of wavelength 850nm, the light emitting area of the Si-based photodetectors and reception area it
Between be equipped with light insulation pad.
Further, the preamplifier includes trans-impedance amplifier, amplitude limiting amplifier circuit, output buffer, band gap base
Reference voltage source；The input of the trans-impedance amplifier terminates the output end of the Si-based photodetectors, the amplitude limiting amplifier circuit
Input terminate the output end of the trans-impedance amplifier, the input terminal of the output buffer connects the defeated of the limiting amplifier
Outlet, the band-gap reference power supply are used for as the trans-impedance amplifier, amplitude limiting amplifier circuit, output buffer power supply.
Further, the gradual approaching A/D converter includes clock generator, 6-bit capacitor array, 4-bit electricity
Array, SAR logic controller, voltage comparator are hindered, the clock generator issues pulse signal, the control of 6-bit capacitor array
Low six numeral outputs, 4-bit electric resistance array control high four numeral outputs, and input analog voltage and reference voltage carry out
Compare, result feedback is saved into SAR logic controller, and control the output in next period.
The utility model has the advantages that Si-based photodetectors, trans-impedance amplifier and analog-digital converter are effectively integrated in one by the present invention
On block chip, same has effectively been incorporated in by Si standard technology by environment light detection, gesture identification, close to distance measurement
On chip, and the amplifying circuit and analog to digital conversion circuit of directly connection electric current conversion voltage, assembling process is simplified, can subtracted
The reliability for guaranteeing system while few interconnection line and system bulk, improves integrated level, promotes equipment micromation, enhances
It is multi-purpose to have achieved the effect that a core, and has reduced costs to a certain extent for the function of chip, enables the chip to be widely applied
Into various small portable electronic devices.And photoelectric sensing has easy of integration, measurement range compared to other sensing technologies
Advantage that is wide and being easy to control adjusting.
Detailed description of the invention
Fig. 1 is the unitary physical structure figure of photoelectricity modulus conversion chip；
Fig. 2 is the Si-based photodetectors layout structure of photoelectricity modulus conversion chip；
Fig. 3 is the circuit module figure of photoelectricity modulus conversion chip；
Fig. 4 is the circuit diagram of the analog-digital converter of photoelectricity modulus conversion chip.
Specific embodiment
Further explanation is done to the present invention with reference to the accompanying drawing.
A kind of photoelectricity modulus conversion chip of integrated silicon-based photodetector, comprising: Si-based photodetectors, preposition amplification
Device, gradual approaching A/D converter.Si-based photodetectors generate photoelectric current by illumination, realize photoelectric conversion, preposition amplification
The faint photoelectric current that device generates photodetector is converted into voltage signal and amplifies, gradual approaching A/D converter
Voltage signal is converted into readable digital signal and is exported to peripheral equipment.
Si-based photodetectors include light emitting area and reception area.Light emitting area is equipped with infrared light supply, and reception area setting is logical
The silicon based opto-electronics diode matrix column of 180nm CMOS technology preparation are crossed, the variation for detecting optical power comes judgment object position
It sets.It wherein, is to cross over the ten of center in silicon based opto-electronics diode matrix column for the silicon based opto-electronics diode group of environment light detection
The silicon based opto-electronics Diode facets of the silicon based opto-electronics diode in font region, cross area are respectively equipped with red filter, blue
Filter membrane, green filter membrane.Silicon based opto-electronics Diode facets other than cross area are equipped with infrared filtering film, as gesture identification
With close to distance measurement detection silicon based opto-electronics diode group.The input of the output termination preamplifier of Si-based photodetectors
End, the input terminal of the output termination gradual approaching A/D converter of preamplifier.
The present embodiment is as shown in Figure 2 and Figure 3, and Si-based photodetectors integrally use patch plastics fenestration to encapsulate, pin point
It is distributed in encapsulation bottom surface.Optical signal reception area is equipped with square window, and infrared light emission area is equipped with circular window, to reduce photodetection
Device area, pin are distributed in encapsulation bottom surface.Silicon based opto-electronics diode matrix is classified as 3 × 3 arrays, indicates silicon based opto-electronics with (i, j)
Diode location, i=1,2,3, j=1,2,3, the surface (2,2) silicon based opto-electronics diode PD1 is respectively equipped with red filter, (1,2)
The surface (3,2) silicon based opto-electronics diode PD2, PD3 is respectively equipped with blue filter membrane, (2,1) and (2,3) silicon based opto-electronics diode
The surface PD4, PD5 is respectively equipped with green filter membrane, (1,1), (1,3), (3,1), (3,3) silicon based opto-electronics diode PD6, PD7, PD8,
The surface PD9 is equipped with the infrared filtering film of wavelength 850nm.
Wherein, PD1, PD2, PD3, PD4, PD5 are one group of silicon substrate optical diode for being used for environment light detection, due to different face
The filter coating of color is to the selective penetrated property of light, and light generation response of the different PD to different-waveband, light source is ambient enviroment at this time
Natural light.PD6, PD7, PD8, PD9 are one group for the silicon based opto-electronics diode close to distance, gesture identification, light emitting area
Infrared light supply be wavelength 850nm infrared LED, when work, infrared LED provides light source for silicon based opto-electronics diode.Work as photoelectricity
Detector is converted into photoelectric current after receiving optical signal, and receives the variation of optical power by the Si-based photodetectors of different location
Judge the position of object and the variation of gesture.It is equipped between the light emitting area of Si-based photodetectors and reception area every light
Plate prevents infrared light from entering reception area from inside, has an impact to PD array, lead to the inaccurate of result.
Human eye is concentrated mainly between 400~700nm wave band the response of light, however the silicon substrate light under CMOS technology
The spectral response peak value of response of electric explorer is located at 850nm or so, different from the spectral response curve of human eye, in order to accurate mould
The spectral response curve of anthropomorphic eye applies filter coating on photodetector surface layer.Five surfaces of reception area are covered with red, green, blue filter
The photodetector of light film separately detects the intensity of general feux rouges, green light and blue light, for the spectral response for making photodetector array
Curve accesses putting across resistance for different amplification further to the spectral response curve of human eye after photodetector reception area
Big device carries out scaling to the output of photodetector, and spectral response curve is adjusted and is optimized.I.e. different two pole of photoelectricity
Pipe connects the trans-impedance amplifier of different amplification, and the silicon based opto-electronics diode with red, blue, green optical filter exports corresponding respectively
Photoelectric current to photoelectric current amplification and is converted into voltage by each preamplifier, and carries out linear combination to simulate the light of human eye
Compose response curve.
As shown in figure 3, preamplifier includes trans-impedance amplifier, amplitude limiting amplifier circuit, output buffer, band-gap reference electricity
Potential source.The output end of the input termination Si-based photodetectors of trans-impedance amplifier, the input termination of amplitude limiting amplifier circuit are put across resistance
The output end of big device, the output end of the input terminal connection limiting amplifier of output buffer.Wherein, trans-impedance amplifier visits photoelectricity
It surveys device output current signal and is tentatively enlarged into voltage signal, then carry out limited range enlargement through amplitude limiting amplifier circuit, in order to realize output
It is connected with external, is equipped with special buffer circuit in afterbody.Band-gap reference power supply is used to put for trans-impedance amplifier, clipping
Big circuit, output buffer power supply, are the voltage source and constant current source of circuit with stable.
The input terminal of the output termination gradual approaching A/D converter of preamplifier, gradual approaching A/D converter
Including clock generator, 6-bit capacitor array, 4-bit electric resistance array, SAR logic controller, voltage comparator.Clock occurs
Device issues pulse signal, and 6-bit capacitor array controls low six numeral outputs, and 4-bit electric resistance array controls high four numbers
Word output.The advantage of capacitor array is so that most significant bit (MSB) has the advantages of better linear properties, electric resistance array to exist
It is small, at low cost in ADC area.So realizing the SARADC of 10-bit precision using the different array manner of two classes.Input mould
Quasi- voltage and reference voltage are compared, and result feedback are saved into SAR logic controller, and control the defeated of next period
Out.
As shown in figure 4, the present embodiment uses high speed gradual approaching/number converter, the course of work: institute before converting
Some register zero setting, it is 1 that clock pulse generator, which issues pulse for the extreme higher position of register, comparator by input voltage and
DAC output is compared, if comparator output is high level, MSB still keeps 1 constant；If the output of comparator is low level,
Then MSB will be set to 0, complete approach for the first time in this way.Again by time high position 1 of DAC, other positions 0, in the same way into
Row relatively determines that a time high position is 1 or 0, and so on, it is compared by turn, and last result preservation is supplied in a register
Microprocessor is read out.
Gradual approaching A/D converter further includes digital circuit, which is integrated with I2C communications protocol circuit, base
In the threshold setting module and digital pulse width modulation circuit of I2C communication.Wherein, I2C communications protocol circuit connection Approach by inchmeal
Type analog-to-digital converter output end comes out for easily transmitting the resulting numerical value of analog-digital converter.Threshold setting module is based on
I2C communications protocol can flexibly set internal register threshold value according to actual conditions, trigger when sampled value is greater than set threshold value
External interrupt informs the response of external system sampled signal, and information transmission is fast, and strong flexibility.Digital pulse width modulation circuit can
Based on I2The frequency and duty ratio of C communication setting output pwm signal, the up to adjustable range of 256 ranks, it is infrared for controlling
The light on and off of LED.
When surveying environment light, there are the Si-based photodetectors of filter coating according to the optical monitoring signal of the different-waveband received
The light of ambient enviroment changes.When detection is close to distance and gesture, the infrared LED in light emitting area emits beam, photodetection
Device receives reflected light, and the variation of the optical power received according to the photodetector of different location is come judgment object
Position and movement direction.The photoelectric current that photodetector generates is converted into voltage signal after being amplified, and then turns by modulus
Parallel operation output digit signals, in order to the reading of peripheral equipment.
When distance measurement mode: the 850nm infrared LED built in base photodetector launches outward infrared signal, infrared letter
Number the reception area that incident optical signal enters sensor is reflected to form through entity, the photodetector array with 850nm filter coating
It receives illumination and generates photoelectric current and by being re-fed into analog-to-digital conversion across hindering amplifying circuit amplification and being converted into analog voltage signal
Device carries out sample conversion output digit signals, finally by I2C bus sends host computer to.As object is at a distance from sensor
Variation, the intensity of reflected light that receives of Si-based photodetectors array is different, influences the size of photoelectric current, the numerical value of output
Also change therewith.
When gesture judgment model: according to four photodetectors in array receive reflection infrared light sequencing come
The mobile direction of judgment object.Threshold value is arranged to the channel where four photodetectors, when the data that photodetector obtains
When more than set threshold value, sensor indicates setting, and host computer is read out and makees to the signal of four photodetectors
Selling, potential shift is dynamic to be judged.
High speed gradual approaching A/D converter of the invention effectively by the analog signal in circuit be converted to two into
Signal processed reads for peripheral equipment and carries out relevant data processing, by analog-digital converter with photodetector and preamplifier
It integrates on one chip, substantially increases the readability and stability of system.Chip of the present invention is in structure effectively by light
Electric explorer, preamplifier and analog-digital converter have been integrated on same chip, are reduced interconnection line, are functionally realized
Environment light, close to the three-in-one of distance and gesture identification, can widely be used in various electronic products equipment, according to week
The brightness of ambient light automatic adjustment electronic display is enclosed, and plays important work in the fields such as object anticollision and intelligent recognition
With.The integrated of height keeps chip volume small, light-weight, and easy to use, practical, function is more, meets the needs in market.
Efficiently, high-precision, low-power analog-digital converter have great meaning and effect to the development of message area.This
Invention signal processing circuit on monolithic die is integrated with analog portion and digital-to-analogue conversion part, wherein the mould of analog portion
Photoelectric current is tentatively amplified and is converted to output voltage by quasi- part, as the driving and control to external circuits；In order to facilitate number
According to reading, a voltage is linked into analog-digital converter, with reference voltage compare, be converted to numeral output, it is prior
It is that can pass through I2C communications protocol circuit is handled using MCU is further to the digital signal of generation, realizes chip functions
More diversification.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (6)
1. a kind of photoelectricity modulus conversion chip of integrated silicon-based photodetector characterized by comprising silicon based opto-electronics detection
Device, preamplifier, gradual approaching A/D converter；The Si-based photodetectors include light emitting area and reception area；Institute
Light emitting area is stated equipped with infrared light supply, the reception area setting is arranged by silicon based opto-electronics diode matrix prepared by CMOS technology；
Silicon based opto-electronics diode group for environment light detection is that the cross at center is crossed in silicon based opto-electronics diode matrix column
The silicon based opto-electronics Diode facets of the silicon based opto-electronics diode in region, the cross area are respectively equipped with red filter, blue
Filter membrane, green filter membrane；Silicon based opto-electronics Diode facets other than the cross area are equipped with infrared filtering film, as gesture
Identification and close to distance measurement detection silicon based opto-electronics diode group；The output of the Si-based photodetectors terminates preposition amplification
The input terminal of device, the input terminal of the output termination gradual approaching A/D converter of the preamplifier.
2. the photoelectricity modulus conversion chip of integrated silicon-based photodetector according to claim 1, which is characterized in that also wrap
Digital circuit is included, the digital circuit is integrated with I2C communications protocol circuit is based on I2The threshold setting module and number of C communication
Pulse-width modulation circuit.
3. the photoelectricity modulus conversion chip of integrated silicon-based photodetector according to claim 1 or 2, which is characterized in that
The Si-based photodetectors integrally use patch plastics fenestration to encapsulate, and pin is distributed in encapsulation bottom surface.
4. according to the photoelectricity modulus conversion chip of any integrated silicon-based photodetector of claim 3, which is characterized in that
The silicon based opto-electronics diode matrix is classified as 3 × 3 arrays, indicates silicon based opto-electronics diode location with (i, j), i=1, and 2,3, j=
1,2,3, (2,2) silicon based opto-electronics Diode facets are respectively equipped with red filter, (1,2) and (3,2) silicon based opto-electronics Diode facets
It is respectively equipped with blue filter membrane, (2,1) and (2,3) silicon based opto-electronics Diode facets are respectively equipped with green filter membrane, (1,1), (1,3),
(3,1), (3,3) silicon based opto-electronics Diode facets are equipped with the infrared filtering film of wavelength 850nm, the infrared light in the light emitting area
Source is the infrared LED of wavelength 850nm, and light insulation pad is equipped between the light emitting area of the Si-based photodetectors and reception area.
5. according to the photoelectricity modulus conversion chip of any integrated silicon-based photodetector of claim 3, which is characterized in that
The preamplifier includes trans-impedance amplifier, amplitude limiting amplifier circuit, output buffer, bandgap voltage reference；It is described across resistance
The input of amplifier terminates the output end of the Si-based photodetectors, and the input termination of the amplitude limiting amplifier circuit is described across resistance
The output end of amplifier, the input terminal of the output buffer connect the output end of the limiting amplifier, the band-gap reference
Power supply is used for as the trans-impedance amplifier, amplitude limiting amplifier circuit, output buffer power supply.
6. according to the photoelectricity modulus conversion chip of any integrated silicon-based photodetector of claim 3, which is characterized in that
The gradual approaching A/D converter includes clock generator, 6-bit capacitor array, 4-bit electric resistance array, SAR logic control
Device processed, voltage comparator, the clock generator issue pulse signal, and 6-bit capacitor array controls low six numeral outputs,
4-bit electric resistance array controls high four numeral outputs, and input analog voltage and reference voltage are compared, and result is fed back and is protected
It deposits into SAR logic controller, and controls the output in next period.
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Cited By (6)
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| CN110220595A (en) * | 2019-04-28 | 2019-09-10 | 北京锐达芯集成电路设计有限责任公司 | A kind of chip |
| CN110942040A (en) * | 2019-11-29 | 2020-03-31 | 四川大学 | Gesture recognition system and method based on ambient light |
| CN112438027A (en) * | 2019-06-26 | 2021-03-02 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN114023269A (en) * | 2021-10-14 | 2022-02-08 | 厦门中莘光电科技有限公司 | Mini/Micro-LED driving chip of single-chip integrated optical signal receiving module |
| CN117109734A (en) * | 2023-10-25 | 2023-11-24 | 中诚华隆计算机技术有限公司 | SOC chip for infrared test |
| CN117146972A (en) * | 2023-10-25 | 2023-12-01 | 中诚华隆计算机技术有限公司 | Infrared test method based on SOC chip |
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