CN116295986B

CN116295986B - Optical signal processing device, method and stress detection system

Info

Publication number: CN116295986B
Application number: CN202310587763.XA
Authority: CN
Inventors: 陈剑; 俞胜武; 苏恒中; 戴丹蕾
Original assignee: Wuxi Zhuohai Technology Co ltd
Current assignee: Wuxi Zhuohai Technology Co ltd
Priority date: 2023-05-24
Filing date: 2023-05-24
Publication date: 2023-08-18
Anticipated expiration: 2043-05-24
Also published as: CN116295986A

Abstract

The invention relates to the technical field of analog small signal acquisition and processing, and discloses an optical signal processing device, an optical signal processing method and a stress detection system. The optical signal processing device comprises an optical-electrical position sensor, a first-stage amplification processing module, a second-stage amplification processing module and a control processing module, wherein the second-stage amplification processing module comprises at least two amplification processing units connected in series, each amplification processing unit comprises at least two amplification channels with different amplification factors, and the control processing module is used for switching the amplification channels of the amplification processing units in the second-stage amplification processing module according to digital signals obtained by converting optical signals received by the optical-electrical position sensor. According to the optical signal processing device, the optical signal processing method and the stress detection system provided by the embodiment of the invention, the amplification channels of the amplification processing units in the second-stage amplification processing module are switched by the control processing module according to the digital signals, so that the adjustment of the amplification factors is realized, and the use requirements of different application scenes can be met.

Description

Optical signal processing device, method and stress detection system

Technical Field

The present invention relates to the field of analog small signal acquisition and processing technologies, and in particular, to an optical signal processing device, an optical signal processing method, and a stress detection system.

Background

In many existing optical detection systems, an optical position sensor (Position Sensitive Detector, PSD) is adopted to convert an optical signal containing information of a sample to be detected into a current signal, then the current signal is amplified and analog-digital converted by a processing circuit to obtain a digital signal, and then a display form such as a digital table, a coordinate graph or an image obtained by processing the digital signal is displayed by an upper computer so as to intuitively display the information such as the surface morphology or the film thickness of the sample to be detected.

The current processing circuit for processing the current signal adopts fixed gain (amplification factor) and does not have the function of adjusting the amplification factor, so that the problem that the amplification factor is too small or too large can occur in different application scenes, and the display effect of the final display form cannot reach the expected effect of detecting the information of the sample to be detected.

Disclosure of Invention

The invention provides an optical signal processing device, an optical signal processing method and a stress detection system, which are used for realizing the adjustment of amplification factors, so that the use requirements of different application scenes can be met.

According to an aspect of the present invention, there is provided an optical signal processing apparatus including a photoelectric position sensor, a first-stage amplification processing module, a second-stage amplification processing module, and a control processing module;

The photoelectric position sensor is used for receiving an optical signal and converting the optical signal into a current signal;

the first-stage amplification processing module is electrically connected with the photoelectric position sensor and is used for converting the current signal into a first voltage signal;

the second-stage amplification processing module is electrically connected with the first-stage amplification processing module and is used for amplifying the first voltage signal to obtain a second voltage signal;

the second-stage amplification processing module comprises at least two amplification processing units connected in series, and each amplification processing unit comprises at least two amplification channels with different amplification factors;

the control processing module is electrically connected with the second-stage amplification processing module, and is used for converting the second voltage signal into a digital signal and switching the amplification channel of the amplification processing unit in the second-stage amplification processing module according to the digital signal.

Optionally, the amplifying processing unit comprises an operational amplifier, a pull-down resistor, a relay unit, a driving unit and at least two feedback resistors;

the first input end of the operational amplifier is grounded through the pull-down resistor, the second input end of the operational amplifier is used as the input end of the amplifying unit, and the output end of the operational amplifier is used as the output end of the amplifying unit;

The feedback resistor is respectively and electrically connected with the first input end of the operational amplifier and the relay unit, and the resistance values of the feedback resistors are different;

the relay unit is electrically connected with the output end of the operational amplifier;

the driving unit is respectively and electrically connected with the relay unit and the control processing module;

the control processing module is also used for driving the relay unit through the driving unit so that the relay unit controls the conduction between one of the at least two feedback resistors and the output end of the operational amplifier.

Optionally, the at least two feedback resistors include a first feedback resistor, a second feedback resistor, and a third feedback resistor;

the relay unit comprises a first relay and a second relay;

the driving unit comprises a first driving chip and a second driving chip;

the second feedback resistor and the third feedback resistor are electrically connected with the input end of the first relay;

the output ends of the first feedback resistor and the first relay are electrically connected with the input end of the second relay;

the output end of the second relay is electrically connected with the output end of the operational amplifier;

The output end of the first driving chip is electrically connected with the control end of the first relay, and the output end of the second driving chip is electrically connected with the control end of the second relay;

the control end of the first driving chip and the control end of the second driving chip are electrically connected with the control processing module.

Optionally, the at least two amplifying units include a first amplifying unit and a second amplifying unit;

the input end of the first amplifying processing unit is electrically connected with the first-stage amplifying processing module, the output end of the first amplifying processing unit is electrically connected with the input end of the second amplifying processing unit, and the output end of the second amplifying processing unit is electrically connected with the control processing module.

According to another aspect of the present invention, there is provided an optical signal processing method for any one of the optical signal processing apparatuses described in the first aspect;

the optical signal processing method comprises the following steps:

determining a display value according to the digital signal;

when the display value is smaller than the lower limit value of a preset display value range, switching the amplifying channels of the amplifying units in the second-stage amplifying processing module so as to improve the amplifying multiple of at least one amplifying unit in the second-stage amplifying processing module;

And when the display value is larger than the upper limit value of the preset display value range, switching the amplifying channels of the amplifying units in the second-stage amplifying processing module so as to reduce the amplifying times of at least one amplifying unit in the second-stage amplifying processing module.

Optionally, before determining the display value according to the digital signal, the method further comprises:

determining a saturation power threshold of the optoelectronic position sensor;

determining the optimal transmitting power of the laser according to the saturated power threshold;

and controlling the laser to emit an optical signal to the photoelectric position sensor at the optimal emission power.

Optionally, determining the saturation power threshold of the optoelectronic position sensor includes:

the following operations are repeatedly performed N times:

controlling the laser to sequentially emit a plurality of first optical signals to the photoelectric position sensor in a first preset power step length, wherein the emission power of the plurality of first optical signals is in a first preset power range, and the emission power of the plurality of first optical signals is gradually reduced along with the emission time;

acquiring a plurality of first digital signals converted by the plurality of first optical signals, and determining a first saturated power reference threshold value of the photoelectric position sensor according to the plurality of first digital signals;

Wherein N is more than or equal to 1, and N is a positive integer;

when n=1, determining that the first saturated power reference threshold is the saturated power threshold;

and when N is more than 1, carrying out average processing on the N first saturated power reference thresholds to obtain the saturated power thresholds.

Optionally, before controlling the laser to sequentially emit a plurality of first optical signals to the optoelectronic position sensor with a first preset power step, the method further includes:

controlling the laser to sequentially emit a plurality of second optical signals to the photoelectric position sensor in a second preset power step length, wherein the emission power of the plurality of second optical signals is in a second preset power range, and the emission power of the plurality of second optical signals is gradually increased along with the emission time;

acquiring a plurality of second digital signals converted by the plurality of second optical signals, and determining a second saturated power reference threshold value of the photoelectric position sensor according to the plurality of second digital signals;

and determining the first preset power range and the first preset power step length according to the second saturated power reference threshold, wherein the first preset power range is positioned in the second preset power range, and the first preset power step length is smaller than the second preset power step length.

Optionally, determining the optimal emission power of the laser according to the saturation power threshold includes:

and determining the product of the saturated power threshold value and a preset proportion as the optimal transmitting power, wherein the preset proportion is A, and A is more than or equal to 75% and less than or equal to 85%.

According to a further aspect of the present invention, there is provided a stress detection system comprising a laser and any of the optical signal processing devices of the first aspect;

the laser is used for emitting optical signals, and the optical signals are reflected to the photoelectric position sensor of the optical signal processing device through a sample to be detected.

The optical signal processing device, the optical signal processing method and the stress detection system provided by the embodiment of the invention are provided with the photoelectric position sensor to convert the received optical signal into the current signal, the first-stage amplification processing module is used for converting the current signal into the first voltage signal, the second-stage amplification processing module is used for amplifying the first voltage signal to obtain the second voltage signal, and the control processing module is used for converting the second voltage signal into the digital signal. The second-stage amplification processing module comprises at least two amplification processing units connected in series, each amplification processing unit comprises at least two amplification channels with different amplification factors, and the amplification channels of the amplification processing units in the second-stage amplification processing module are switched according to digital signals through the control processing module, so that the amplification factors are adjusted, and the use requirements of different application scenes can be met.

It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of an optical signal processing device according to an embodiment of the present invention.

Fig. 2 is a schematic structural diagram of an optoelectronic position sensor according to an embodiment of the present invention.

Fig. 3 is a diagram of a collected signal according to an embodiment of the present invention.

Fig. 4 is a diagram of another collected signal according to an embodiment of the present invention.

Fig. 5 is a schematic diagram of still another signal acquisition display according to an embodiment of the present invention.

Fig. 6 is a schematic structural diagram of a second-stage amplifying processing module according to an embodiment of the present invention.

Fig. 7 is a schematic structural diagram of an operational amplifier according to an embodiment of the present invention.

Fig. 8 is a schematic flow chart of a preparation method of an optical signal processing method according to an embodiment of the present invention.

Fig. 9 is a schematic flow chart of a preparation method of another optical signal processing method according to an embodiment of the present invention.

Fig. 10 is a flow chart of a preparation method of another optical signal processing method according to an embodiment of the present invention.

Fig. 11 is a graph showing a relationship between a transmission power and a current value of a current signal according to an embodiment of the present invention.

Fig. 12 is a flow chart of a preparation method of another optical signal processing method according to an embodiment of the present invention.

Fig. 13 is a schematic structural diagram of a stress detection system according to an embodiment of the present invention.

Fig. 14 is a flow chart of a preparation method of another optical signal processing method according to an embodiment of the present invention.

Detailed Description

In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Fig. 1 is a schematic structural diagram of an optical signal processing device according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram of an optical position sensor according to an embodiment of the present invention, where, as shown in fig. 1 and fig. 2, the optical signal processing device according to an embodiment of the present invention includes an optical position sensor 10, a first-stage amplifying processing module 11, a second-stage amplifying processing module 12, and a control processing module 13, where the optical position sensor 10 is configured to receive an optical signal and convert the optical signal into a current signal. The first stage amplification processing module 11 is electrically connected to the photoelectric position sensor 10 and is used for converting the current signal into a first voltage signal V1. The second-stage amplification processing module 12 is electrically connected to the first-stage amplification processing module 11, and is configured to amplify the first voltage signal V1 to obtain a second voltage signal V2. The second stage amplification processing module 12 includes at least two amplification processing units 121 connected in series, and each amplification processing unit 121 includes at least two amplification channels 30 with different amplification factors. The control processing module 13 is electrically connected to the second stage amplification processing module 12, and the control processing module 13 is configured to convert the second voltage signal V2 into a digital signal, and switch the amplification channel 30 of the amplification processing unit 121 in the second stage amplification processing module 12 according to the digital signal.

Specifically, as shown in fig. 2, the photoelectric position sensor 10 is formed by three layers, the uppermost layer is a P layer 101, the lower layer is an N layer 102, a thicker high-resistance I layer 103 is inserted in the middle to form a P-I-N structure, the structure has the characteristics of wide depletion region of the I layer 103 and small junction capacitance, and photo-generated carriers are almost all generated in the depletion region of the I layer 103, and no photocurrent of diffusion component exists, so that the photoelectric position sensor 10 has a faster response speed than a common PN junction photodiode. Meanwhile, the photoelectric position sensor 10 has the characteristics of high sensitivity, high resolution and simple configuration circuit, and can realize high-precision processing and conversion of optical signals.

With continued reference to FIG. 2, the optoelectronic position sensor 10 can have 3 extraction electrodes 104, with the extraction electrodes 104 disposed on the N-layer 102 being grounded. When the surface of the photoelectric position sensor 10 receives the optical signal 20, electron-hole pairs, which are generated at the spot position formed by the optical signal 20 and are proportional to the optical energy, flow through the P-layer resistor, and then output the photocurrent I1 and the photocurrent I2 from the two extraction electrodes 104 disposed on the P-layer 101, respectively, where the photocurrent I1 and the photocurrent I2 are the current signals input to the first-stage amplification processing module 11 subsequently.

With continued reference to fig. 1, the first stage amplification processing module 11 receives the current signals (photocurrent I1 and photocurrent I2) generated by the photo-electric position sensor 10 and converts the current signals (photocurrent I1 and photocurrent I2) into a first voltage signal V1.

The first stage amplification processing module 11 may include a high precision resistor to convert between a current signal and a voltage signal, but is not limited thereto, and the embodiment of the present invention is not limited thereto.

Further, the first stage amplification processing module 11 may further perform an amplifying function, so as to convert the weaker current signal into the stronger first voltage signal V1, so that the first voltage signal V1 is easier to collect and process. The amplification factor of the first-stage amplification processing module 11 may be a fixed amplification factor, that is, the amplification factor of the first-stage amplification processing module 11 is not adjustable, so that the device cost of the first-stage amplification processing module 11 is reduced.

With continued reference to fig. 1, the second-stage amplification processing module 12 receives the first voltage signal V1 output by the first-stage amplification processing module 11, amplifies the first voltage signal V1 to obtain a second voltage signal V2, and transmits the second voltage signal V2 to the control processing module 13.

With continued reference to fig. 1, the control processing module 13 may include an analog-to-digital converter (Analogue to Digitalconversion, ADC) 131 and a processor 132, where the analog-to-digital converter 131 is configured to convert the second voltage signal V2 output by the second stage amplification processing module 12 into a digital signal, and transmit the digital signal to the processor 132, and the processor 132 processes the digital signal to generate a corresponding digital table, a coordinate graph, or an image, and so on.

As shown in fig. 1, the display module 14 may be connected to the processor 132, and the processor 132 may send the generated data such as the digital table, the coordinate graph or the image to the display module 14 for displaying, so that the user can intuitively obtain the information such as the position or the intensity of the optical signal through the displayed digital table, the coordinate graph or the image. When the optical signal processing device is used in a sample detection system, detection information of a sample to be detected can be further obtained according to information such as the position or the intensity of an optical signal.

Fig. 3 is a diagram of an acquired signal provided by an embodiment of the present invention, fig. 4 is another diagram of an acquired signal provided by an embodiment of the present invention, and fig. 3 and 4 may be images generated by processing a digital signal by the processor 132. Wherein the abscissa in fig. 3 and 4 represents the number of the optical signal received by the photoelectric position sensor 10, the ordinate in fig. 3 and 4 represents the voltage value, and each point in the graph represents the voltage value represented by the digital signal converted from the optical signal of each number.

It can be understood that the greater the intensity of the optical signal received by the optical-electrical position sensor 10, the greater the voltage value of the second voltage signal V2 converted by the optical signal, the greater the voltage value represented by the digital signal converted by the second voltage signal V2, so that the intensity information of the corresponding optical signal can be obtained through the voltage values of the optical signals with different numbers in the figure.

As shown in fig. 3 and fig. 4, the range of the display value of the ordinate is 0V to 10V, and in the same optical signal detection application scenario, if the amplification factor of the optical signal processing device is too small, the voltage value displayed finally may be too small, for example, as shown in fig. 3, the displayed voltage value is only about 1V, and in the optical signal detection process, the fluctuation range of the displayed voltage value is small, so that it is difficult to accurately obtain the intensity information of the corresponding optical signal according to the displayed voltage value. However, if the amplification factor of the optical signal processing apparatus is too large, the voltage value displayed finally may be too large, for example, as shown in fig. 4, the voltage value displayed approaches or even exceeds 10V, and in the optical signal detection process, the voltage value easily exceeds the display numerical range of the ordinate, thereby causing data loss.

Based on the above technical problems, with continued reference to fig. 1, in this embodiment, the second stage amplification processing module 12 includes at least two amplification processing units 121 connected in series, at least two amplification channels 30 are provided in any one amplification processing unit 121, and the amplification factors of different amplification channels 30 in the same amplification processing unit 121 are different, so that the first voltage signal V1 passes through the different amplification channels 30, and can obtain different amplification factors.

For any of the amplification processing units 121, the control processing module 13 may select one of the amplification channels 30 to amplify the first voltage signal V1, thereby obtaining a corresponding amplification factor.

Further, at least two amplifying units 121 in the second-stage amplifying processing module 12 are connected in series, each amplifying unit 121 can amplify the first voltage signal V1 at one stage, so that at least two stages of amplifying units 121 in the second-stage amplifying processing module 12 can amplify the first voltage signal V1 at least, thereby realizing large-scale amplification factor adjustment and meeting the use requirements of various different application scenarios. The amplification factor by which the second-stage amplification processing module 12 finally amplifies the first voltage signal V1 is the product of the amplification factors of all the amplification processing units 121 in the second-stage amplification processing module 12.

As shown in fig. 1, for example, the second stage amplifying module 12 includes two amplifying units 121 connected in series, where each amplifying unit 121 includes 3 amplifying channels 30, and in the transmission direction of the first voltage signal V1, the amplifying times of the 3 amplifying channels 30 in the first amplifying unit 121 are k11=10 times, k12=5 times, and k13=2 times, respectively, and the control processing module 13 may select one amplifying channel 30 in the first amplifying unit 121 to amplify the first voltage signal V1, so as to obtain a corresponding amplifying time; the amplification factors of the 3 amplification channels 30 in the second amplification processing unit 121 are k21=3 times, k22=2 times, and k23=1.5 times, respectively, and the control processing module 13 may select one amplification channel 30 in the second amplification processing unit 121 to amplify the first voltage signal V1, so as to obtain a corresponding amplification factor. For example, the control processing module 13 selects the amplification channel 30 with the intermediate amplification factor in the first amplification processing unit 121 to obtain a 5-fold amplification factor, and the control processing module 13 selects the amplification channel 30 with the intermediate amplification factor in the second amplification processing unit 121 to obtain a 2-fold amplification factor, so that the amplification factor K of amplifying the first voltage signal V1 by the second-stage amplification processing module 12 is k12×k22= 5*2 =10.

Optionally, the control processing module 13 may determine whether the current amplification factor of the second-stage amplification processing module 12 is appropriate according to whether the display form obtained after the digital signal processing meets the expected effect.

Fig. 5 is a schematic diagram of still another signal acquisition display according to an embodiment of the present invention, and the signal acquisition display is illustrated by taking a signal acquisition diagram as an example, wherein the abscissa in fig. 5 represents the number of the optical signal received by the optoelectronic position sensor 10, and the ordinate in fig. 5 represents the voltage value. If the expected effect is that the displayed voltage value is about 5V, when the displayed voltage value is too small (as shown in fig. 3), which indicates that the current amplification factor of the second-stage amplification processing module 12 is too small, at this time, the control processing module 13 switches the amplification channel 30 of at least one amplification processing unit 121 in the second-stage amplification processing module 12 to select the amplification processing unit 121 with a larger amplification factor to amplify the first voltage signal V1, thereby increasing the voltage value in the acquired signal diagram generated by the final digital signal processing, and making the voltage value displayed in the acquired signal diagram approach 5V. If the displayed voltage value is too large (as shown in fig. 4), it indicates that the current amplification factor of the second-stage amplification processing module 12 is too large, at this time, the control processing module 13 switches the amplification channel 30 of at least one amplification processing unit 121 in the second-stage amplification processing module 12 to select the amplification processing unit 121 with a smaller amplification factor to amplify the first voltage signal V1, thereby reducing the voltage value in the acquired signal diagram generated by the final digital signal processing, and making the voltage value displayed in the acquired signal diagram approach to 5V. In this way, in different application scenarios, or in response to the requirements of different display expected effects, the control processing module 13 can switch the amplifying channels 30 of the amplifying processing unit 121 in the second-stage amplifying processing module 12 to obtain a suitable amplification factor, so as to achieve the expected effect of the final display form.

The display form generated from the digital signal is not limited to the acquired signal map, and may be a display form such as a digital table, other graphics, or an image. The expected effect on the display form is not limited to the above-mentioned voltage value displayed by the optical signal in the middle region of the ordinate, and in other embodiments, the display form and the expected effect to be achieved may be determined according to the actual requirement.

Further, with continued reference to fig. 1, the optical signal received by the optoelectronic position sensor 10 may be an optical signal emitted by the laser 51, and the control processing module 13 may be electrically connected to the laser 51 to control the laser 51 to emit the optical signal to the optoelectronic position sensor 10 with a suitable emission power.

In summary, in the optical signal processing device provided by the embodiment of the invention, the photoelectric position sensor is configured to convert the received optical signal into the current signal, the first-stage amplification processing module converts the current signal into the first voltage signal, the second-stage amplification processing module amplifies the first voltage signal to obtain the second voltage signal, and the control processing module converts the second voltage signal into the digital signal. The second-stage amplification processing module comprises at least two amplification processing units connected in series, each amplification processing unit comprises at least two amplification channels with different amplification factors, and the amplification channels of the amplification processing units in the second-stage amplification processing module are switched according to digital signals through the control processing module, so that the amplification factors are adjusted, and the use requirements of different application scenes can be met.

Fig. 6 is a schematic structural diagram of a second-stage amplifying processing module according to an embodiment of the present invention, and as shown in fig. 6, an amplifying processing unit 121 optionally includes an operational amplifier 40, a pull-down resistor 41, a relay unit 42, a driving unit 43, and at least two feedback resistors 44. The first input 401 of the operational amplifier 40 is grounded via the pull-down resistor 41, the second input 402 of the operational amplifier 40 is provided as an input 1211 of the amplification processing unit 121, and the output 403 of the operational amplifier 40 is provided as an output 1212 of the amplification processing unit 121. The feedback resistor 44 is electrically connected to the first input 401 of the operational amplifier 40 and the relay unit 42, respectively, and the resistances of the different feedback resistors 44 are different. The relay unit 42 is electrically connected to the output 403 of the operational amplifier 40, the driving unit 43 is electrically connected to the relay unit 42 and the control processing module 13, respectively, and the control processing module 13 is configured to drive the relay unit 42 through the driving unit 43, so that the relay unit 42 controls conduction between one of the at least two feedback resistors 44 and the output 403 of the operational amplifier 40.

Fig. 7 is a schematic structural diagram of an operational amplifier according to an embodiment of the present invention, as shown in fig. 7, a first input end 401 of the operational amplifier 40 may be an inverting input end of the operational amplifier 40, a second input end 402 of the operational amplifier 40 may be a homodromous input end of the operational amplifier 40, one end of a pull-down resistor 41 is electrically connected to the first input end 401, the other end of the pull-down resistor 41 is grounded GND, one end of a feedback resistor 44 is electrically connected to the first input end 401, and the other end of the feedback resistor 44 is electrically connected to an output end 403 of the operational amplifier 40. The voltage signal is input to the operational amplifier 40 through the second input terminal 402, the operational amplifier 40 amplifies the voltage signal, and the amplified voltage signal is output through the output terminal 403, wherein the amplification factor of the voltage signal depends on the resistance values of the pull-down resistor 41 and the feedback resistor 44, for example, the resistance value of the pull-down resistor 41 is R1, the resistance value of the feedback resistor 44 is Rf, and the amplification factor k0= (rf+r1)/R1.

Based on the above amplification principle, with continued reference to fig. 6, the pull-down resistor 41 is set to be a resistor having a fixed resistance value, and at least two feedback resistors 44 having different resistance values are set at the same time, one end of each feedback resistor 44 is electrically connected to the first input terminal 401 of the operational amplifier 40, and the other end of each feedback resistor 44 is electrically connected to the output terminal 403 of the operational amplifier 40 through the relay unit 42. The relay unit 42 is configured to control conduction between one feedback resistor 44 of the at least two feedback resistors 44 and the output terminal 403 of the operational amplifier 40, and when the feedback resistors 44 other than the feedback resistor 44 are disconnected from the output terminal 403 of the operational amplifier 40, the amplification factor of the amplifying unit 121 depends on the resistance value of the feedback resistor 44 that is conducted with the output terminal 403 of the operational amplifier 40, and each feedback resistor 44 can be used as an amplifying channel 30, and by switching conduction between different feedback resistors 44 and the output terminal 403 of the operational amplifier 40 through the relay unit 42, switching of different amplifying channels 30 can be achieved, and switching of different amplifying coefficients can be achieved.

With continued reference to fig. 6, the driving unit 43 is electrically connected to the relay unit 42, and the driving unit 43 is used to drive the relay unit 42. The control processing module 13 is electrically connected to the driving unit 43, and the control processing module 13 may send a control instruction to the driving unit 43, so that the driving unit 43 drives the relay unit 42 to switch between the feedback resistor 44 with a suitable resistance value and the output end 403 of the operational amplifier 40, i.e. to switch the suitable amplifying channel 30, so as to obtain a suitable amplifying coefficient.

It should be noted that, as shown in fig. 6, the operational amplifier 40 may employ an ultra-precise operational amplifier chip OP177, where the operational amplifier chip OP177 has the characteristics of high precision and micro power consumption, and the temperature drift of the type of operational amplifier chip is very small, and has very high stability, and low requirement on frequency characteristics. In other embodiments, the operational amplifier 40 may be any type of amplifier, which is not particularly limited in this embodiment of the present invention.

With continued reference to fig. 6, when the operational amplifier 40 is the operational amplifier chip OP177, power supplies of +12v and-12V may be connected to the operational amplifier chip OP177, but the power supply voltage is not limited thereto.

With continued reference to fig. 6, optionally, a first resistor 45 is connected in series between the second input 402 and the input 1211 of the operational amplifier 40, and the first resistor 45 and the second input 402 are grounded GND through a second resistor 46, so as to ensure stable operation of the operational amplifier 40. The resistance of the first resistor 45 may be 10K, and the resistance of the second resistor 46 may be 100K, but is not limited thereto.

With continued reference to fig. 6, optionally, a first capacitor 47 is connected in series between the output 403 and the first input 401 of the operational amplifier 40, so as to ensure stable operation of the operational amplifier 40. The capacitance value of the first capacitor 47 may be 47nF, but is not limited thereto.

With continued reference to fig. 6, optionally, the at least two feedback resistors 44 include a first feedback resistor 441, a second feedback resistor 442, and a third feedback resistor 443. The relay unit 42 includes a first relay 421 and a second relay 422, and the driving unit 43 includes a first driving chip 431 and a second driving chip 432. The second feedback resistor 442 and the third feedback resistor 443 are electrically connected to the input end of the first relay 421, the first feedback resistor 441 and the output end of the first relay 421 are electrically connected to the input end of the second relay 422, the output end of the second relay 422 is electrically connected to the output end 403 of the operational amplifier 40, the output end of the first driving chip 431 is electrically connected to the control end of the first relay 421, the output end of the second driving chip 432 is electrically connected to the control end of the second relay 422, and the control end of the first driving chip 431 and the control end of the second driving chip 432 are electrically connected to the control processing module 13.

Specifically, as shown in fig. 6, one amplifying unit 121 may include 3 feedback resistors 44 with resistance values, which are a first feedback resistor 441, a second feedback resistor 442, and a third feedback resistor 443, so that one amplifying unit 121 includes 3 amplifying channels 30 with different amplification factors, and the setting of the amplifying unit 121 can ensure that the circuit structure of the amplifying unit 121 is not too complex while the amplification factor adjustment range and the adjustment number can meet the requirements of different application scenarios, and the optical signal processing device is ensured to have lower cost.

In other embodiments, the number of feedback resistors 44 in each amplifying unit 121 may be set according to actual requirements, which is not particularly limited in the embodiments of the present invention.

With continued reference to fig. 6, the second feedback resistor 442 and the third feedback resistor 443 are both electrically connected to the input terminal of the first relay 421, and the first relay 421 is configured to control conduction between one of the second feedback resistor 442 and the third feedback resistor 443 and the output terminal of the first relay 421, and disconnection between the other one and the output terminal of the first relay 421. The output terminals of the first feedback resistor 441 and the first relay 421 are electrically connected to the input terminal of the second relay 422, and the output terminal of the second relay 422 is electrically connected to the output terminal 403 of the operational amplifier 40, so that the second relay 422 can control the conduction between one of the output terminals of the first feedback resistor 441 and the first relay 421 and the output terminal 403 of the operational amplifier 40, and the disconnection between the other one and the output terminal 403 of the operational amplifier 40.

So configured, when it is desired to select the amplification channel 30 in which the first feedback resistor 441 is located, the second relay 422 controls conduction between the first feedback resistor 441 and the output terminal 403 of the operational amplifier 40; when the amplification channel 30 in which the second feedback resistor 442 is located needs to be selected, the first relay 421 is configured to control conduction between the second feedback resistor 442 and the output end of the first relay 421, and the second relay 422 controls conduction between the output end of the first relay 421 and the output end 403 of the operational amplifier 40; when the amplification channel 30 where the third feedback resistor 443 is located needs to be selected, the first relay 421 is used for controlling conduction between the third feedback resistor 443 and the output terminal of the first relay 421, and the second relay 422 is used for controlling conduction between the output terminal of the first relay 421 and the output terminal 403 of the operational amplifier 40. In this way, the switching of the amplification channel 30 in which the first feedback resistor 441, the second feedback resistor 442, or the third feedback resistor 443 is located can be achieved by the first relay 421 and the second relay 422.

With continued reference to fig. 6, each relay needs to be driven by a driving chip. The control end of the first relay 421 is electrically connected with the control processing module 13 through the first driving chip 431, so that the control processing module 13 can drive the first relay 421 to work through the first driving chip 431; the control end of the second relay 422 is electrically connected with the control processing module 13 through the second driving chip 432, so that the control processing module 13 can drive the second relay 422 to work through the second driving chip 432; further, by controlling the first relay 421 and the second relay 422 to switch different amplification channels 30, it is achieved that the first-stage amplification processing unit 121 can switch different amplification coefficients.

With continued reference to fig. 6, the first relay 421 and the second relay 422 may be optionally G6KU-2P-Y-DC5 type relays, where the G6KU-2P-Y-DC5 type relays may implement high density packaging and have features of high sensitivity and low power consumption.

In this embodiment, as shown in fig. 6, the first relay 421 includes pins 1-8, where pins 2, 4, 7, 5 are input terminals of the first relay 421, pins 2, 6 are output terminals of the first relay 421, and pins 1, 8 are control terminals of the first relay 421. The working principle of the first relay 421 may be: when a high level is applied to the pin 1 and a low level is applied to the pin 8, conduction is achieved between the pin 2 and the pin 3, and conduction is achieved between the pin 7 and the pin 6; when a low level is applied to pin 1 and a high level is applied to pin 8, conduction is provided between pin 4 and pin 3 and between pin 5 and pin 6. It will be appreciated that the second relay 422 also has the above-described construction and operation principle when a G6KU-2P-Y-DC5 type relay is used.

Based on the above relay principle, the second feedback resistor 442 and the third feedback resistor 443 may be set to be connected to the pin 7 and the pin 5 of the first relay 421, respectively, or the second feedback resistor 442 and the third feedback resistor 443 may be connected to the pin 2 and the pin 4 of the first relay 421, respectively; the output ends of the first feedback resistor 441 and the first relay 421 are respectively connected with the pin 2 and the pin 4 of the second relay 422, or the output ends of the first feedback resistor 441 and the first relay 421 are respectively connected with the pin 7 and the pin 5 of the second relay 422, which can be set by a person skilled in the art according to actual requirements.

It should be noted that, in other embodiments, the first relay 421 and the second relay 422 may also be other types of relays, which is not limited in particular by the embodiment of the present invention.

With continued reference to fig. 6, the first driver chip 431 and the second driver chip 432 may be selected from MX608E driver chips, where the MX608E driver chip has a smaller input current and has an overheat protection function.

In this embodiment, as shown in fig. 6, the first driving chip 431 includes 8 pins, wherein the pins OUTA and OUTB are output terminals of the first driving chip 431, the pins INA and INB are control terminals of the first driving chip 431, the pin GND is a ground terminal, the pin VCC is a logic control power terminal, the pin VDD is a power terminal, and the pins VCC and VDD can be connected to a 5V power supply, but the power supply voltage is not limited thereto.

The working principle of the first driving chip 431 may be: when a high level is applied to the pin INA and a low level is applied to the pin INB, the pin OUTA outputs a high level and the pin OUTB outputs a low level; when a low level is applied to the pin INA and a high level is applied to the pin INB, the pin OUTA outputs a low level and the pin OUTB outputs a high level. It can be understood that the second driver chip 432 also has the above-described structure and operation principle when the MX608E type driver chip is adopted.

With continued reference to fig. 6, based on the driving chip principle described above, the pin 8 and the pin 1 of the first relay 421 may be set to be connected to the pin OUTA and the pin OUTB of the first driving chip 431, respectively, and the pin 8 and the pin 1 of the second relay 422 are connected to the pin OUTA and the pin OUTB of the second driving chip 432, respectively, and the pins INA and INB of the first driving chip 431 and the second driving chip 432 are electrically connected to the control processing module 13, so as to enable the control processing module 13 to drive the first relay 421 and the second relay 422 through the first driving chip 431 and the second driving chip 432, respectively, so that the first relay 421 and the second relay 422 switch different amplifying channels 30.

With continued reference to fig. 6, optionally, a pin VCC of at least one of the first driver chip 431 and the second driver chip 432 is grounded GND through the second capacitor 48, so that the second capacitor 48 functions as a filter. The capacitance of the second capacitor 48 may be 10nF, but is not limited thereto.

It should be noted that, in other embodiments, the first driving chip 431 and the second driving chip 432 may also be driving chips of other types, which is not limited in particular in the embodiments of the present invention.

With continued reference to fig. 1 and 6, optionally, the at least two amplification processing units 121 include a first amplification processing unit 121A and a second amplification processing unit 121B. The input end 1211 of the first amplification processing unit 121A is electrically connected to the first-stage amplification processing module 11, the output end 1212 of the first amplification processing unit 121A is electrically connected to the input end 1211 of the second amplification processing unit 121B, and the output end 1212 of the second amplification processing unit 121B is electrically connected to the control processing module 13.

The first voltage signal V1 output by the first stage amplification processing module 11 is input to the first amplification processing unit 121A through the input end 1211 of the first amplification processing unit 121A, the first voltage signal V1 is output by the output end 1212 of the first amplification processing unit 121A after being subjected to first stage amplification by the first amplification processing unit 121A, is input to the second amplification processing unit 121B through the input end 1211 of the second amplification processing unit 121B, and is then amplified by the first amplification processing unit 121A to form the second voltage signal V2, and the second voltage signal V2 is output by the output end 1212 of the second amplification processing unit 121B to the control processing module 13.

In this embodiment, by setting the second-stage amplification processing module 12 to include two amplification processing units 121, the first voltage signal V1 is amplified in two stages to obtain the second voltage signal V2, so that the circuit structure of the second-stage amplification processing module 12 is not too complex while the amplification factor adjustment range and the adjustment number can meet the requirements of different application scenarios, and the optical signal processing device is ensured to have lower cost.

In other embodiments, the number of the amplifying units 121 in the second stage amplifying module 12 may be set according to actual requirements, which is not limited in the embodiment of the present invention.

As shown in fig. 6, the resistance of the pull-down resistor 41 in the first amplifying unit 121A is 10K, the resistance of the first feedback resistor 441 is 90K, the resistance of the second feedback resistor 442 is 40K, and the resistance of the third feedback resistor 443 is 10K; the second amplification processing unit 121B is illustrated with the pull-down resistor 41 having a resistance of 10K, the first feedback resistor 441 having a resistance of 20K, the second feedback resistor 442 having a resistance of 10K, and the third feedback resistor 443 having a resistance of 5K.

According to the formula of the amplification factor K0: k0 = (rf+r1)/R1, an amplification factor k11=10 of the amplification channel 30 where the first feedback resistor 441 is located, an amplification factor k12=5 of the amplification channel 30 where the second feedback resistor 442 is located, and an amplification factor k13=2 of the amplification channel 30 where the third feedback resistor 443 is located in the first amplification processing unit 121A may be obtained; in the second amplification processing unit 121B, the amplification factor k21=3 of the amplification channel 30 where the first feedback resistor 441 is located, the amplification factor k22=2 of the amplification channel 30 where the second feedback resistor 442 is located, and the amplification factor k23=1.5 of the amplification channel 30 where the third feedback resistor 443 is located. The first amplification processing unit 121A and the second amplification processing unit 121B may amplify the first voltage signal V1 in two stages, and then signal amplification of different amplification factors may be performed within 3 to 30 times.

For example, as shown in fig. 6, taking the first amplifying unit 121A as an example, when the amplifying channel 30 (k11=10) where the first feedback resistor 441 of 90K is located needs to be selected, the control processing module 13 drives the second relay 422 to turn on the pin 2 and the pin 3 through the second driving chip 432, so that the first feedback resistor 441 is turned on with the output end 403 of the operational amplifier 40, and the second feedback resistor 442 and the third feedback resistor 443 are opened, thereby realizing the amplification factor k1=10 of the first amplifying unit 121A on the first voltage signal V1.

When the amplification channel 30 (k12=5) where the second feedback resistor 442 of 40K is located is required to be selected, the control processing module 13 drives the second relay 422 to turn on the pin 3 and the pin 4 through the second driving chip 432, and drives the first relay 421 to turn on the pin 6 and the pin 7 through the first driving chip 431, so that the second feedback resistor 442 is turned on with the output end 403 of the operational amplifier 40, and the first feedback resistor 441 and the third feedback resistor 443 are opened, thereby realizing the amplification factor k1=5 of the first amplification processing unit 121A on the first voltage signal V1.

When the amplification channel 30 (k13=2) where the third feedback resistor 443 of 10K is located is required to be selected, the control processing module 13 drives the second relay 422 to turn on the pin 3 and the pin 4 through the second driving chip 432, and drives the first relay 421 to turn on the pin 5 and the pin 6 through the first driving chip 431, so that the third feedback resistor 443 is turned on with the output end 403 of the operational amplifier 40, and the first feedback resistor 441 and the second feedback resistor 442 are opened, thereby realizing the amplification factor k1=2 of the first amplification processing unit 121A on the first voltage signal V1.

The switching principle of the amplification factor K2 of the second amplification processing unit 121B is the same as that of the amplification factor K1 of the first amplification processing unit 121A, and will not be described here again.

It should be noted that, the resistance values of the feedback resistors 44 (the first feedback resistor 441, the second feedback resistor 442, and the third feedback resistor 443) in the first amplifying unit 121A and the second amplifying unit 121B may be set according to actual requirements, which is not particularly limited in the embodiment of the present invention.

Further, the amplification channels 30 selected by default by the second stage amplification processing module 12 may be the amplification channels 30 with the above-mentioned amplification factors of K12 and K22, that is, the default amplification factor of the second stage amplification processing module 12 is 10 times. According to the above-described combination of the resistance values of the respective feedback resistors 44 (the first feedback resistor 441, the second feedback resistor 442, and the third feedback resistor 443) in the first amplification processing unit 121A and the second amplification processing unit 121B, the second-stage amplification processing module 12 can realize amplification factors of 3, 4, 6, 7.5, 10, 15, 20, and 30 times, respectively.

When the control processing module 13 determines that the amplification factor of the second-stage amplification processing module 12 is too large according to the digital signal converted by the second voltage signal V2, the amplification factor of the second-stage amplification processing module 12 can be preferentially adjusted from 10 times to 7.5 times, that is, the amplification factors are switched to the amplification channels 30 with the amplification factors of K12 and K21, and if the amplification factors are still too large, the amplification factors are sequentially adjusted to 6 times (switched to the amplification channels 30 with the amplification factors of K11 and K23) and 4 times (switched to the amplification channels 30 with the amplification factors of K11 and K12) until the amplification factors are switched to the proper amplification factors.

On the contrary, when the control processing module 13 determines that the amplification factor of the second-stage amplification processing module 12 is insufficient according to the digital signal converted by the second voltage signal V2, the amplification factors of the second-stage amplification processing module 12 can be sequentially adjusted to 15 times (switched to the amplification channels 30 with the amplification factors of K12 and K23) and 20 times (switched to the amplification channels 30 with the amplification factors of K13 and K22) until the amplification factors are switched to the appropriate amplification factors.

The amplification channel 30 selected by default by the second stage amplification processing module 12, that is, the default amplification factor of the second stage amplification processing module 12 may be selected to be the amplification factor in the middle of the amplification factor adjustment range as in the above embodiment, but the present invention is not limited thereto.

Based on the same inventive concept, the embodiments of the present invention further provide an optical signal processing method, which is used for any optical signal processing device provided in the foregoing embodiments, and the explanation of the same or corresponding structure and terms as those of the foregoing embodiments is not repeated herein.

The method may be performed by an optical signal processing unit, which may be implemented in hardware and/or software, which may be configured in a control processing module of an optical signal processing device.

Fig. 8 is a flow chart of a preparation method of an optical signal processing method according to an embodiment of the present invention, as shown in fig. 8, where the method includes:

s11, determining a display numerical value according to the digital signal.

The digital signal is a digital signal obtained by converting an optical signal received by a photoelectric position sensor of the optical signal processing device into a current signal sequentially through the photoelectric position sensor, converting the current signal into a first voltage signal by a first-stage amplification processing module, amplifying the first voltage signal into a second voltage signal by a second-stage amplification processing module, and controlling the processing module to perform analog-digital conversion.

The display value refers to a value displayed in a generated display form (digital table, coordinate graph or image, etc.) after the control processing module processes the acquired digital signal.

For example, as shown in fig. 3-5, the exemplary embodiment is illustrated by taking the form of a graph of the acquired signal, and in fig. 3-5, the numerical values are displayed as voltage values represented by the digital signal.

In this embodiment, the control processing module may process the digital signal to generate a display form (such as a digital table, a coordinate graph, or an image), and display the display value represented by the digital signal in the display form.

And S12, when the display value is smaller than the lower limit value of the preset display value range, switching the amplifying channels of the amplifying units in the second-stage amplifying processing module so as to improve the amplifying times of at least one amplifying unit in the second-stage amplifying processing module.

The preset display numerical value range is a display numerical value range with the optimal display effect expected to be obtained.

As shown in fig. 5, taking the display form as an example of the collected signal chart, the expected best display effect is that the display value (i.e. the voltage value of the optical signal in the chart) is in the middle area of the ordinate value range (i.e. the display value is about 5V), at this time, the preset display value range may be set to 40% to 60% of the ordinate value range, i.e. the preset display value range is 4V to 6V, and the lower limit value of the preset display value range is 4V.

As shown in fig. 3, when the display value (e.g., the voltage value of the optical signal in the figure) is smaller than the lower limit value (e.g., 4V) of the preset display value range, the control processing module may increase the amplification factor of at least one amplifying unit in the second-stage amplifying processing module, so as to increase the amplification factor of the second-stage amplifying processing module on the first voltage signal, so that the display value (e.g., the voltage value of the optical signal in the figure) is located in the preset display value range.

Further, the second-stage amplification processing module may be preset with a plurality of different amplification factors, and when the control processing module increases the amplification factor of at least one amplification processing unit in the second-stage amplification processing module, the preset amplification factors may be sequentially switched from small to large until the display numerical value is within the preset display numerical value range.

For example, as described in the above embodiment, the preset magnification of the second-stage amplification processing module may be 3, 4, 6, 7.5, 10, 15, 20, and 30 times, respectively, and the magnification of the second-stage amplification processing module default to 10 times in the initial state.

When the display value is smaller than the lower limit value of the preset display value range, the control processing module can increase the amplification factor of at least one amplification processing unit in the second-stage amplification processing module so as to switch the amplification factor of the second-stage amplification processing module to 15 times, and if the display value is still smaller than the lower limit value of the preset display value range, the control processing module continues to increase the amplification factor of at least one amplification processing unit in the second-stage amplification processing module so as to switch the amplification factor of the second-stage amplification processing module to 20 times, and so on until the display value is in the preset display value range.

And S13, when the display value is larger than the upper limit value of the preset display value range, switching the amplifying channels of the amplifying units in the second-stage amplifying processing module so as to reduce the amplifying times of at least one amplifying unit in the second-stage amplifying processing module.

For example, as shown in fig. 5, taking the display form as an example of the acquired signal chart, the preset display numerical range may be set to 40% to 60% of the ordinate numerical range, that is, the preset display numerical range is 4V to 6V, and the upper limit value of the preset display numerical range is 6V.

As shown in fig. 4, when the display value (e.g., the voltage value of the optical signal in the figure) is greater than the upper limit value (e.g., 6V) of the preset display value range, the control processing module may reduce the amplification factor of at least one amplifying unit in the second-stage amplifying processing module, so as to reduce the amplification factor of the second-stage amplifying processing module on the first voltage signal, and further make the display value (e.g., the voltage value of the optical signal in the figure) be located in the preset display value range.

Further, the second-stage amplification processing module may be preset with a plurality of different amplification factors, and when the control processing module reduces the amplification factor of at least one amplification processing unit in the second-stage amplification processing module, the preset amplification factors may be sequentially switched from large to small until the display numerical value is within the preset display numerical value range.

When the display value is larger than the upper limit value of the preset display value range, the control processing module can reduce the amplification factor of at least one amplification processing unit in the second-stage amplification processing module so as to enable the amplification factor of the second-stage amplification processing module to be switched to 7.5 times, if the display value is still larger than the upper limit value of the preset display value range, the control processing module continues to reduce the amplification factor of at least one amplification processing unit in the second-stage amplification processing module so as to enable the amplification factor of the second-stage amplification processing module to be switched to 6 times, and so on until the display value is in the preset display value range.

It should be noted that, the preset display numerical range may be set according to the expected best display effect, which is not limited in the embodiment of the present invention.

In addition, the preset amplification factor of the second-stage amplification processing module and the default amplification factor of the second-stage amplification processing module in the initial state can be set according to actual requirements, and the embodiment of the invention is not limited in particular.

Fig. 9 is a flow chart of a preparation method of another optical signal processing method according to an embodiment of the present invention, as shown in fig. 9, optionally, before determining a display value according to a digital signal, further includes:

s101, determining a saturation power threshold of the photoelectric position sensor.

The larger the emission power of the optical signal received by the photoelectric position sensor is, the larger the current value of the current signal converted by the photoelectric position sensor based on the optical signal is, namely the current value of the current signal output by the photoelectric position sensor is increased along with the improvement of the emission power of the optical signal, and the current value of the current signal output by the photoelectric position sensor and the emission power of the optical signal are in a linear relation, so that the emission power of the received optical signal can be obtained according to the current value of the current signal.

Optionally, when the optical signal processing device is used in the sample detection system, an optical signal can be emitted to the sample to be detected by a laser with a certain emission power, then the photoelectric position sensor of the optical signal processing device receives the optical signal transmitted or reflected by the sample to be detected, and converts the received optical signal into a current signal, and the current value of the current signal output by the photoelectric position sensor and the emission power of the optical signal are in a linear relationship, so that the emission power of the received optical signal can be obtained by the current value of the current signal, and further the detection information of the sample to be detected can be obtained according to the information such as the emission power of the optical signal.

The photoelectric position sensor has a linear power interval, and when the transmitting power of the optical signal is in the linear power interval, the linear relation is formed between the current value of the current signal output by the photoelectric position sensor and the transmitting power of the optical signal. When the emission power of the laser is too high, the emission power of the optical signal received by the photoelectric position sensor exceeds a linear power interval, the photoelectric position sensor can reach a saturated state at the moment, and then, if the emission power of the optical signal received by the photoelectric position sensor is continuously increased, the current value of the current signal output by the photoelectric position sensor can not be continuously increased, namely, the current value of the current signal output by the photoelectric position sensor and the emission power of the optical signal are not in a linear relation any more, and at the moment, when the optical signal processing device is used for a sample detection system, the finally obtained detection information is not accurate any more.

In this embodiment, before the optical signal processing device is used for sample detection by the sample detection system, a saturated power threshold of the photoelectric position sensor is determined, where the saturated power threshold refers to an upper limit value of a linear power interval of the photoelectric position sensor, that is, when the emission power of the optical signal is less than or equal to the saturated power threshold, a linear relationship is formed between a current value of a current signal output by the photoelectric position sensor and the emission power of the optical signal; when the emission power of the optical signal is larger than the saturation power threshold, the current value of the current signal output by the photoelectric position sensor and the emission power of the optical signal are not in linear relation any more.

S102, determining the optimal transmitting power of the laser according to the saturated power threshold.

The laser is used for transmitting optical signals to the photoelectric position sensor of the optical signal processing device, namely, in different application scenes of the optical signal processing device, the photoelectric position sensor of the optical signal processing device receives the optical signals transmitted by the laser. In different application scenarios, the optical signal received by the photoelectric position sensor may be an optical signal that is directly emitted to the photoelectric position sensor by the laser, or an optical signal that is formed by transmitting or reflecting an optical signal emitted by the laser through a sample to be tested or other structures.

After determining the saturation power threshold of the optoelectronic position sensor, an optimal emission power of the laser may be determined according to the saturation power threshold, where the optimal emission power refers to an emission power of the laser emitting an optical signal to the optoelectronic position sensor when the optical signal processing device is applied to sample detection.

Optionally, the saturation power threshold may be used as an upper limit value of the optimal emission power of the laser, that is, the optimal emission power of the laser does not exceed the saturation power threshold, so that the photoelectric position sensor works in a linear power interval, and the situation that the finally obtained detection information is not accurate due to the fact that a linear relation is lost between a current value of a current signal output by the photoelectric position sensor and the emission power of an optical signal is avoided.

and determining the product of the saturated power threshold and a preset proportion as the optimal transmitting power, wherein the preset proportion is A, and A is more than or equal to 75% and less than or equal to 85%.

The optimal transmitting power of the laser is set to 75-85% of the saturated power threshold, so that the laser is guaranteed to have enough transmitting power, and a margin is set between the optimal transmitting power of the laser and the saturated power threshold of the photoelectric position sensor, so that the transmitting power of the laser cannot exceed the saturated power threshold of the photoelectric position sensor.

It should be noted that, the specific value of the preset ratio may be set according to the actual requirement, for example, the preset ratio is set to 80%, but is not limited thereto.

S103, controlling the laser to emit optical signals to the photoelectric position sensor at the optimal emission power.

The optical signal is emitted to the photoelectric position sensor by controlling the laser with the optimal emission power, so that the photoelectric position sensor can work in a linear power interval, and the situation that the finally acquired detection information is inaccurate due to the fact that the linear relation between the current value of the current signal output by the photoelectric position sensor and the emission power of the optical signal is lost is avoided.

Fig. 10 is a flowchart of a preparation method of another optical signal processing method according to an embodiment of the present invention, and as shown in fig. 10, optionally, determining a saturation power threshold of an optical-electrical position sensor includes:

the following operations are repeatedly performed N times:

s1011, controlling the laser to sequentially emit a plurality of first optical signals to the photoelectric position sensor in a first preset power step length, wherein the emission power of the plurality of first optical signals is in a first preset power range, and the emission power of the plurality of first optical signals is gradually reduced along with the emission time.

Specifically, the laser is controlled to sequentially emit a plurality of first optical signals to the photoelectric position sensor in a first preset power range at a first preset power step length so as to perform multi-power scanning on the photoelectric position sensor, and the emission power of the plurality of first optical signals is gradually reduced along with the emission time.

The first preset power range is a range where the transmitting power of the plurality of first optical signals transmitted by the laser is located, that is, the transmitting power of the plurality of first optical signals transmitted by the laser is located in the first preset power range.

The first preset power step length is the difference value of the transmitting power of two adjacent first optical signals transmitted by the laser.

The first preset power range and the first preset power step length can be set according to actual requirements, which is not particularly limited in the embodiment of the present invention.

Fig. 11 is a graph showing a relationship between an emission power and a current value of a current signal according to an embodiment of the present invention, as shown in fig. 11, and in an exemplary embodiment, a first preset power range may be set to be 1mW to 10mW, and the first preset power step is 0.4mW, where the laser emits a plurality of first optical signals to the optoelectronic position sensor with emission power of 10mW, 9.6mW, 9.2mW, 8.8mW, 8.4mW, and 8.0mW … mW sequentially.

S1012, acquiring a plurality of first digital signals converted by the plurality of first optical signals, and determining a first saturated power reference threshold value of the photoelectric position sensor according to the plurality of first digital signals.

The optical signal processing device converts the first optical signals once to obtain a first digital signal, so that the number of the first optical signals emitted by the laser to the photoelectric position sensor is equal to the number of the first digital signals converted by the optical signal processing device.

It will be appreciated that the greater the transmission power of the first optical signal, the greater the current value of the current signal converted by the first optical signal through the optoelectronic position sensor, and the greater the current value characterized by the first digital signal converted by the current signal.

When the photoelectric position sensor works in the linear power interval, the current value of the current signal output by the photoelectric position sensor has a linear relation with the emission power of the received optical signal, so that the control processing module can obtain a plurality of first digital signals converted by the plurality of first optical signals, obtain the current value of the current signal according to the first digital signals, perform curve fitting on the current value of the current signal and the emission power of the corresponding first optical signals to obtain a relation curve of the emission power and the current value of the current signal, judge whether the current value of the current signal and the emission power of the corresponding first optical signal are in a linear proportional relation according to the relation curve, and further determine whether the emission power of the first optical signal is located in the linear power interval of the photoelectric position sensor.

The first saturated power reference threshold value of the photoelectric position sensor is the upper limit value of the linear power interval of the photoelectric position sensor, which is measured by performing multi-power scanning on the photoelectric position sensor through the laser.

For example, as shown in fig. 11, when the emission power is lower than 6mW, the current value of the current signal and the emission power of the corresponding first optical signal are in a linear proportional relationship, after the current value exceeds 6mW, the photoelectric position sensor starts to saturate, and the current value of the current signal and the emission power of the corresponding first optical signal are no longer in a linear relationship, at this time, it is determined that 6mW is the first saturated power reference threshold of the photoelectric position sensor.

The current value of the current signal may be the sum of the current values of the photocurrent I1 and the photocurrent I2 generated by the photoelectric position sensor, but is not limited thereto.

Further, the above S1011 and S1012 are performed N times, wherein N.gtoreq.1, and N is a positive integer.

S1013, when n=1, determining that the first saturated power reference threshold value is a saturated power threshold value.

When n=1, only one first saturated power reference threshold is obtained, and at this time, the first saturated power reference threshold is directly determined as the saturated power threshold of the photoelectric position sensor, so that the saturated power threshold of the photoelectric position sensor can be determined quickly.

S1014, when N is more than 1, carrying out average processing on N first saturated power reference thresholds to obtain saturated power thresholds.

The average processing of the N first saturated power reference thresholds means that the N first saturated power reference thresholds are summed and divided by N, and the obtained value is the saturated power threshold.

Taking n=2 as an example, S1011 and S1012 are repeatedly executed twice, the first saturated power reference threshold value obtained by executing S1011 and S1012 for the first time is recorded as P1, and the first saturated power reference threshold value obtained by executing S1011 and S1012 for the second time is recorded as P2, so that the saturated power threshold value p= (p1+p2)/2.

Wherein, by performing the above steps S1011 and S1012 at least 2 times and performing an average process on the first saturated power reference threshold value obtained each time to obtain the saturated power threshold value, the detection error of the saturated power threshold value can be reduced, so that the obtained saturated power threshold value is more accurate.

It should be noted that, the smaller the first preset power step length is, the more accurate the saturated power threshold value obtained through the multi-power scanning detection is, but because the first preset power step length cannot be infinitely small, a certain error exists between the saturated power threshold value obtained through the multi-power scanning detection and the actual saturated power threshold value of the photoelectric position sensor. In this embodiment, the first optical signal is sequentially emitted to the photoelectric position sensor from high emission power to low emission power by setting the laser, so that the saturation power threshold value obtained by final detection is slightly lower than the actual saturation power threshold value of the photoelectric position sensor, thereby ensuring that the best emission power of the finally determined laser is lower than the actual saturation power threshold value of the photoelectric position sensor, that is, ensuring that the photoelectric position sensor works in a linear power interval, and avoiding detection misalignment caused by loss of the linear relationship between the current value of the current signal output by the photoelectric position sensor and the emission power of the optical signal.

Fig. 12 is a flowchart of a preparation method of another optical signal processing method according to an embodiment of the present invention, as shown in fig. 12, optionally, before controlling a laser to sequentially emit a plurality of first optical signals to an optoelectronic position sensor with a first preset power step, the method further includes:

s10101, controlling the laser to sequentially emit a plurality of second optical signals to the photoelectric position sensor in a second preset power step length, wherein the emission power of the plurality of second optical signals is in a second preset power range, and the emission power of the plurality of second optical signals is gradually increased along with the emission time.

In order to more accurately detect the saturation power threshold of the photoelectric position sensor, the first preset power step length may be a smaller value, and when the first preset power range is fixed, the number of first optical signals emitted by the laser may be increased by the smaller first preset power step length, so that the time of performing multi-power scanning by the laser is longer.

Based on the above technical problems, in this embodiment, a larger transmission power range is set as a second preset power range, a larger transmission power step is set as a second preset power step, and then a plurality of second optical signals are sequentially transmitted to the photoelectric position sensor in the second preset power range in the second preset power step by controlling the laser, so as to perform coarser multi-power scanning on the photoelectric position sensor.

It can be understood that the second preset power range is a range where the emission power of the plurality of second optical signals emitted by the laser is located, that is, the emission power of the plurality of second optical signals emitted by the laser is located in the second preset power range.

The second preset power step length is the difference value of the transmitting power of two adjacent second optical signals transmitted by the laser.

The second preset power range and the second preset power step length can be set according to actual requirements, which is not particularly limited in the embodiment of the present invention.

For example, the second preset power range may be set to be 1mW to 20mW, and the first preset power step is 1mW, and then the laser sequentially emits the plurality of second optical signals to the optoelectronic position sensor with emission power of 1mW, 2mW, 3mW, 4mW, 5mW and … mW.

S10102, a plurality of second digital signals converted by the plurality of second optical signals are obtained, and a second saturated power reference threshold value of the photoelectric position sensor is determined according to the plurality of second digital signals.

And the optical signal processing device converts the second optical signals once to obtain a second digital signal, so that the number of the second optical signals emitted by the laser to the photoelectric position sensor is equal to the number of the second digital signals converted by the optical signal processing device.

It will be appreciated that the greater the transmit power of the second optical signal, the greater the current value of the current signal converted by the second optical signal through the optoelectronic position sensor, and the greater the current value characterized by the second digital signal converted by the current signal.

When the photoelectric position sensor works in the linear power interval, the current value of the current signal output by the photoelectric position sensor has a linear relation with the emission power of the received optical signal, so that the control processing module can obtain a plurality of second digital signals converted by the second optical signals, obtain the current value of the current signal according to the second digital signals, perform curve fitting on the current value of the current signal and the emission power of the corresponding second optical signals to obtain a relation curve of the emission power and the current value of the current signal, judge whether the current value of the current signal and the emission power of the corresponding second optical signal are in a linear proportional relation according to the relation curve, and further determine the second saturated power reference threshold of the photoelectric position sensor.

The specific determination method of the second saturated power reference threshold may refer to the determination method of the first saturated power reference threshold, which is not described herein.

It should be noted that, the second saturated power reference threshold value of the photoelectric position sensor is an upper limit value of a linear power interval of the photoelectric position sensor measured by performing rough multi-power scanning on the photoelectric position sensor through the laser, and because the second preset power step length is larger at this time, a larger error exists between the obtained second saturated power reference threshold value and an actual saturated power threshold value of the photoelectric position sensor, but the approximate power range where the actual saturated power threshold value of the photoelectric position sensor is located can be obtained through the second saturated power reference threshold value.

S10103, determining a first preset power range and a first preset power step length according to a second saturated power reference threshold, wherein the first preset power range is located in the second preset power range, and the first preset power step length is smaller than the second preset power step length.

After the second saturated power reference threshold is obtained, a first preset power range smaller than the interval range of the second preset power range can be determined according to the second saturated power reference threshold, and a first preset power step smaller than the second preset power step is determined at the same time so as to perform finer multi-power scanning on the photoelectric position sensor.

For example, if the obtained second saturated power reference threshold is 7mW, the second preset power range may be set to 5mW to 9mW, and the first preset power step size is 0.1mW, and then the laser sequentially transmits a plurality of first optical signals to the photoelectric position sensor with the transmitting power of 9mW, 9.8mW, and 9.7mW … 5mW, so as to realize fine multi-power scanning in a smaller power range, thereby being beneficial to reducing multi-power scanning duration and improving the detection efficiency of the saturated power threshold while ensuring the detection accuracy of the saturated power threshold of the photoelectric position sensor.

It should be noted that, since the control laser sequentially transmits the first optical signal to the optoelectronic position sensor from the high transmission power to the low transmission power, in this embodiment, the control laser sequentially transmits the second optical signal to the optoelectronic position sensor from the low transmission power to the high transmission power, so that more information about the saturation power threshold of the optoelectronic position sensor can be obtained on the one hand, and the laser stays at the high transmission power after the rough scanning is finished on the other hand, when the control laser sequentially transmits the first optical signal to the optoelectronic position sensor, the fine multi-power scanning can be directly performed from the currently located high transmission power to the low transmission power sequentially without further performing the large-range transmission power conversion.

Based on the same inventive concept, the embodiment of the present invention further provides a stress detection system, and fig. 13 is a schematic structural diagram of the stress detection system provided in the embodiment of the present invention, as shown in fig. 13, the stress detection system 50 includes a laser 51 and an optical signal processing device 52 according to any embodiment of the present invention, so that the stress detection system 50 provided in the embodiment of the present invention has the technical effects of the technical solution in any embodiment, and the same or corresponding structure and term explanation as those of the embodiment are not repeated herein.

As shown in fig. 13, the laser 51 is configured to emit an optical signal, and the optical signal is reflected by the sample 53 to be measured to the photoelectric position sensor 10 of the optical signal processing device 52.

The sample 53 may be a semiconductor sample such as a wafer, but is not limited thereto.

Alternatively, the stress detection system may be a film stress meter, which may be used for the front-end detection of semiconductors, but is not limited thereto.

As shown in fig. 13, for example, the optical signal emitted by the laser 51 is reflected to the photoelectric position sensor 10 of the optical signal processing device 52 through the surface of the sample 53 to be measured, when the surface of the sample 53 to be measured has a certain curve radian, the spot position of the optical signal reflected to the photoelectric position sensor 10 will be displaced, so that the current value of the current signal output by the photoelectric position sensor 10 is different, accordingly, the radius of curvature of the surface of the sample 53 to be measured can be determined according to the current value of the current signal output by the photoelectric position sensor 10, and the stress value of the surface film layer of the sample 53 to be measured can be calculated.

The stress detection system may include 1 laser 51, or may include a plurality of lasers 51, as shown in fig. 13, and the stress detection system includes 2 lasers 51 for example, where the stress detection system is provided with a first laser 511 and a second laser 512, and wavelengths of optical signals output by the first laser 511 and the second laser 512 may be different, so that a wavelength range of the optical signals may be adjusted, so that a wavelength of the optical signal emitted by the laser 51 may be located in a wavelength band suitable for the sample 53 to be detected, and further the stress detection system may be suitable for stress detection of multiple different types of samples 53 to be detected.

Illustratively, the first laser 511 may employ a 670nm laser and the second laser 512 may employ a 780nm laser, but is not limited thereto.

With continued reference to fig. 13, a beam splitter 54 may be disposed on the optical paths of the optical signals emitted by the first laser 511 and the second laser 512, so that the optical signals emitted by the first laser 511 and the second laser 512 may be transmitted to the sample 53 to be measured through the beam splitter 54, but is not limited thereto.

It should be noted that the laser 51 may be electrically connected to a control processing module in the optical signal processing device 52, so that the control processing module can control the laser 51 to emit an optical signal.

Fig. 14 is a flowchart of a preparation method of another optical signal processing method according to an embodiment of the present invention, as shown in fig. 14, before the stress detection system performs stress detection on the sample 53 to be detected, the method may include the following steps:

the control processing module controls the second-stage amplification processing module to select a default amplification channel and controls the laser to emit optical signals to the photoelectric position sensor so as to perform multi-power scanning on the photoelectric position sensor.

The method for performing multi-power scanning on the optical potential sensor may refer to the optical signal processing method provided in the foregoing embodiment, and will not be described herein.

After multi-power scanning is carried out on the photoelectric position sensor, the control processing module determines a saturated power threshold value of the photoelectric position sensor, and determines the optimal transmitting power of the laser according to the saturated power threshold value.

The method for determining the saturated power threshold and the optimal transmit power may refer to the method for processing an optical signal provided in the foregoing embodiment, which is not described herein.

After determining the optimal transmit power, the laser is controlled to transmit an optical signal to the optoelectronic position sensor at the optimal transmit power. The control processing module generates a required display form according to the acquired corresponding digital signals, and switches the amplifying channels of the amplifying processing units of at least one second-stage amplifying processing module according to the display form so as to adjust the second-stage amplifying processing module to a proper amplifying multiple.

The method for adjusting the amplification factor of the second stage amplification processing module may refer to the method for processing an optical signal provided in the foregoing embodiment, which is not described herein again.

After the adjustment of the optimal transmitting power and the amplification factor is completed, the stress detection is performed on the sample 53 to be detected, so that in the process of performing the stress detection on the sample to be detected, on one hand, the laser transmits the optical signal with the optimal transmitting power, so that the photoelectric position sensor works in a linear power interval, the condition that the photoelectric position sensor is in a saturated state due to the fact that the transmitting power of the optical signal is too high is avoided, and further, the detection result is prevented from being directly influenced due to the fact that part of data distortion occurs; on the other hand, the second-stage amplification processing module can be adjusted to proper amplification factors based on different application scenes, so that the stress detection system can finally achieve a good display effect.

It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.

The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.

Claims

1. An optical signal processing device is characterized in that,

the system comprises a photoelectric position sensor, a first-stage amplification processing module, a second-stage amplification processing module and a control processing module;

The control processing module is electrically connected with the second-stage amplification processing module, and is used for converting the second voltage signal into a digital signal and switching the amplification channel of the amplification processing unit in the second-stage amplification processing module according to the digital signal;

the control processing module is specifically configured to:

determining a display value according to the digital signal;

when the display value is larger than the upper limit value of the preset display value range, switching the amplifying channels of the amplifying units in the second-stage amplifying processing module so as to reduce the amplifying times of at least one amplifying unit in the second-stage amplifying processing module;

the control processing module is further configured to:

before determining a display value according to the digital signal, repeating the following operations N times:

controlling a laser to sequentially emit a plurality of first optical signals to the photoelectric position sensor in a first preset power step length, wherein the emission power of the plurality of first optical signals is in a first preset power range, and the emission power of the plurality of first optical signals is gradually reduced along with the emission time;

wherein N is more than or equal to 1, and N is a positive integer;

when n=1, determining that the first saturated power reference threshold is a saturated power threshold;

when N is more than 1, carrying out average processing on N first saturated power reference thresholds to obtain saturated power thresholds;

determining an optimal transmitting power of the laser according to the saturated power threshold;

2. An optical signal processing device according to claim 1, wherein,

the amplifying processing unit comprises an operational amplifier, a pull-down resistor, a relay unit, a driving unit and at least two feedback resistors;

3. An optical signal processing device according to claim 2, wherein,

the at least two feedback resistors comprise a first feedback resistor, a second feedback resistor and a third feedback resistor;

the relay unit comprises a first relay and a second relay;

the driving unit comprises a first driving chip and a second driving chip;

4. An optical signal processing device according to claim 2, wherein,

the at least two amplifying processing units comprise a first amplifying processing unit and a second amplifying processing unit;

5. An optical signal processing method, characterized by being used for the optical signal processing apparatus according to any one of claims 1 to 4;

the optical signal processing method comprises the following steps:

determining a display value according to the digital signal;

Before determining the display value from the digital signal, further comprising:

determining a saturation power threshold of the optoelectronic position sensor;

controlling the laser to emit an optical signal to the photoelectric position sensor at the optimal emission power;

determining a saturation power threshold of the optoelectronic position sensor, comprising:

the following operations are repeatedly performed N times:

wherein N is more than or equal to 1, and N is a positive integer;

6. The method for processing an optical signal according to claim 5, wherein,

before controlling the laser to sequentially emit a plurality of first optical signals to the photoelectric position sensor at a first preset power step, the method further comprises:

7. The method for processing an optical signal according to claim 5, wherein,

determining an optimal transmit power of the laser based on the saturation power threshold, comprising:

8. A stress detection system comprising a laser and an optical signal processing device according to any one of claims 1-4;