CN117146972B - Infrared test method based on SOC chip - Google Patents
Infrared test method based on SOC chip Download PDFInfo
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- CN117146972B CN117146972B CN202311385262.XA CN202311385262A CN117146972B CN 117146972 B CN117146972 B CN 117146972B CN 202311385262 A CN202311385262 A CN 202311385262A CN 117146972 B CN117146972 B CN 117146972B
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- 238000010998 test method Methods 0.000 title claims abstract description 8
- 238000012545 processing Methods 0.000 claims abstract description 70
- 238000012360 testing method Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 238000004891 communication Methods 0.000 claims description 23
- 238000012544 monitoring process Methods 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 6
- 229940056932 lead sulfide Drugs 0.000 claims description 3
- 229910052981 lead sulfide Inorganic materials 0.000 claims description 3
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 claims description 3
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 claims description 3
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 claims description 3
- 230000000875 corresponding effect Effects 0.000 description 21
- 238000013461 design Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0437—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using masks, aperture plates, spatial light modulators, spatial filters, e.g. reflective filters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
Abstract
The invention relates to the technical field of SOC (system on chip) chips, in particular to an infrared test method based on an SOC chip. The method is applied to an SOC (system on chip) chip, wherein the SOC chip is electrically connected with a receiving module and comprises a data processing module and an alarm module; the receiving module comprises a plurality of receiving units, one end of each receiving unit is used for receiving the optical signal, and the receiving ends of the different receiving units are provided with filter films with different transmission frequencies; the method comprises the following steps: converting the received light into current by using a plurality of receiving units respectively to obtain a plurality of current intensities; calculating the light intensity proportion of the corresponding wave band according to the plurality of current intensities obtained by conversion of the receiving module by utilizing the data processing module; and the temperature of the receiving module is monitored by the alarm module, and when the temperature of the receiving module exceeds the preset temperature, the alarm module alarms. The embodiment of the invention provides an infrared testing method based on an SOC chip, which can analyze received infrared subbands.
Description
Technical Field
The invention relates to the technical field of SOC (system on chip) chips, in particular to an infrared test method based on an SOC chip.
Background
Infrared testing is mainly used to test infrared bands generated in some experiments (collision experiments, plasma release).
In the related art, an infrared test system can only analyze the overall parameters of the generated infrared light. However, the ratio of the different bands of infrared light tested cannot be directly derived.
Therefore, in order to address the above-mentioned shortcomings, there is an urgent need for an infrared test method based on an SOC chip.
Disclosure of Invention
The embodiment of the invention provides an infrared testing method based on an SOC chip, which can analyze received infrared subbands.
The embodiment of the invention provides an infrared test method based on an SOC (system on chip) chip, which is applied to the SOC chip, wherein the SOC chip is electrically connected with a receiving module and comprises a data processing module and an alarm module; the receiving module comprises a plurality of receiving units, one end of each receiving unit is used for receiving an optical signal, and the receiving ends of different receiving units are provided with filter films with different transmission frequencies;
the method comprises the following steps:
converting the received light into current by using a plurality of receiving units respectively to obtain a plurality of current intensities;
calculating the light intensity proportion of the corresponding wave band according to the plurality of current intensities obtained by conversion of the receiving module by utilizing a data processing module;
and monitoring the temperature of the receiving module by using an alarm module, and alarming by using the alarm module when the temperature of the receiving module exceeds a preset temperature.
In one possible design, the data processing module includes a plurality of first processing units and second processing units, the first processing units are in one-to-one correspondence with the receiving units, and the first processing units store filter frequency information of filter films of the receiving units corresponding to the first processing units;
the calculating, by the data processing module, the light intensity ratio of the corresponding wave band according to the plurality of current intensities obtained by the receiving module includes:
the first processing unit receives the current intensity of the receiving unit corresponding to the first processing unit;
the first processing unit calculates a light intensity value according to the stored filtering frequency and the received current intensity;
the second processing unit obtains the proportion of different wave bands of infrared light according to different light intensity values obtained by different first processing units.
In one possible design, the monitoring the temperature of the receiving module by using an alarm module, when the temperature of the receiving module exceeds a preset temperature, the alarm module alarms, including:
monitoring the temperature of each receiving unit by using an alarm module, and sending alarm information by using the alarm module when the temperature of any receiving unit exceeds a preset temperature; wherein, the alarm information comprises the position information of the receiving unit on the SOC chip.
In one possible design, the alarm module comprises a plurality of communication units and an alarm unit;
the communication units are in one-to-one correspondence with the receiving units and are electrically connected, and the position information of the corresponding receiving units is stored in the communication units;
when the receiving unit exceeds a preset temperature, the receiving unit sends an electric signal to the corresponding communication unit, and the communication unit sends the stored position information to the alarm unit for alarm.
In one possible design, a thermistor is connected to the receiving unit in an insulating manner, and the communication unit is connected to the thermistor, and the temperature of the receiving unit is determined by the resistance change of the thermistor.
In one possible design, the light intensity value is calculated by the following formula:
E=（Ihv）/es
wherein E is a light intensity value, I is a current intensity, h is a Planck constant, v is the filtering frequency, E is a basic charge, and s is a receiving area of the receiving end.
In one possible design, the SOC chip further includes a storage module storing the photoelectric efficiency of each of the receiving units;
the second processing unit obtains the proportion of different wave bands of infrared light according to different light intensity values obtained by different first processing units, and the second processing unit comprises:
the second processing unit obtains the proportion of different wave bands of infrared light according to different light intensity values and the photoelectric efficiency of the receiving unit (11) corresponding to the light intensity values.
In one possible design, the ratio of different bands of infrared light is found by the following formula:
wherein,for the intensity ratio of the ith band, +.>For the photoelectric efficiency of the ith band, -/->The light intensity value for the i-th band.
In one possible design, the receiving unit comprises an infrared photodetector.
In one possible design, the infrared photodetector includes an infrared receiving layer made of at least one of lead sulfide, lead selenide, mercury telluride, and titanium sesquioxide.
Compared with the prior art, the invention has at least the following beneficial effects:
in this embodiment, the receiving module includes a plurality of receiving units, and different receiving units are used for receiving the filter films with different frequencies on the receiving end of the infrared ray. So set up, the infrared light spot of collecting shines simultaneously on receiving element, and every receiving element received infrared light intensity and wave band distribute unanimously, but all are provided with the filter film on every receiving element's the receiving end, and only infrared light in a certain fixed wave band can be received by receiving element through the filter film, and a plurality of receiving element can receive the infrared light of a plurality of different wave bands simultaneously, from this, can decompose a beam of infrared light into the infrared light of a plurality of different wave bands and be received by a plurality of receiving element. After receiving the light of a plurality of frequency bands, the plurality of receiving units generate current positively correlated to the intensity of the light according to the intensity of the light, and then transmit the intensity of the current to the data processing module. The data processing module calculates the light intensity proportion between corresponding wave bands according to the intensities of the currents.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of an infrared testing method based on an SOC chip provided by an embodiment of the invention;
fig. 2 is a schematic structural diagram of an SOC chip according to an embodiment of the present invention.
In the figure:
1-a receiving module;
11-a receiving unit;
2-a data processing module;
and 3-an alarm module.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by those skilled in the art without making any inventive effort based on the embodiments of the present invention are within the scope of protection of the present invention.
In the description of embodiments of the present invention, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying any relative importance unless explicitly specified or limited otherwise; the term "plurality" means two or more, unless specified or indicated otherwise; the terms "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, it should be understood that the terms "upper", "lower", and the like used in the embodiments of the present invention are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In the context of this document, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on the other element or be indirectly on the other element through intervening elements.
As shown in fig. 1 and fig. 2, the embodiment of the invention provides an infrared test method based on an SOC (system on chip) chip, which is applied to the SOC chip, wherein the SOC chip is electrically connected with a receiving module 1, and the SOC chip comprises a data processing module 2 and an alarm module 3; the receiving module 1 comprises a plurality of receiving units 11, wherein one end of each receiving unit 11 for receiving an optical signal is a receiving end, and the receiving ends of different receiving units 11 are provided with filter films with different transmission frequencies;
the method comprises the following steps:
converting the received light into current by using a plurality of receiving units 11, respectively, to obtain a plurality of current intensities;
the data processing module 2 is utilized to calculate the light intensity proportion of the corresponding wave band according to the plurality of current intensities obtained by the conversion of the receiving module 1;
the temperature of the receiving module 1 is monitored by the alarm module 3, and when the temperature of the receiving module 1 exceeds the preset temperature, the alarm module 3 alarms.
In the present embodiment, the receiving module 1 includes a plurality of receiving units 11, and different receiving units 11 are used to set filter films of different frequencies on the receiving end for receiving infrared rays. So set up, the infrared spot of collecting shines simultaneously on receiving element 11, and the infrared light intensity and the wave band distribution that every receiving element 11 received are unanimous, but all are provided with the filter on every receiving element's the receiving terminal, and only the infrared light in a certain fixed wave band can be received by receiving element 11 through the filter, and a plurality of receiving element 11 can receive the infrared light of a plurality of different wave bands simultaneously, from this, can decompose a beam of infrared light into the infrared light of a plurality of different wave bands and be received by a plurality of receiving element 11. After receiving the light of the multiple frequency bands, the multiple receiving units 11 generate a current positively correlated with the intensity of the light according to the intensity of the light, and then transmit the intensity of the current to the data processing module 2. The data processing module 2 calculates the proportion of the light intensity between the corresponding wave bands according to the intensities of the plurality of currents.
In the present embodiment, when the infrared detection device of one or more of the receiving units 11 in the receiving module 1 is damaged, the infrared light is converted from the photoelectric effect into the thermal effect, which causes the temperature of the receiving module 1 to rise. Therefore, the alarm module 3 is arranged to monitor the temperature of the receiving module 1, and once the temperature of the receiving module 1 is too high, the alarm module 3 alarms to overhaul, so that the chip is prevented from being damaged due to the too high temperature.
It will be appreciated that the intensity of the light may change with time, the intensity of the current may also change synchronously, and the data processing module 2 may also derive an intensity change curve of the infrared light in the corresponding band according to the intensity change of the current.
The collected infrared light irradiates the collecting module of the chip in the form of light spots, and the light intensity of each part of the light spots is uniformly distributed. The areas of the receiving ends of the receiving units 11 are preferably equal.
In some embodiments of the present invention, the data processing module 2 includes a plurality of first processing units and second processing units, the first processing units are in one-to-one correspondence with the receiving units 11, and the first processing units store filter frequency information of the filter film of the receiving unit 11 corresponding to the first processing units;
the data processing module 2 is used for calculating the light intensity proportion of the corresponding wave band according to the plurality of current intensities obtained by the receiving module 1, and the method comprises the following steps:
the first processing unit receives the current intensity of the receiving unit 11 corresponding thereto;
the first processing unit calculates a light intensity value according to the stored filtering frequency and the received current intensity;
the second processing unit obtains the proportion of different wave bands of the infrared light according to different light intensity values obtained by different first processing units.
In the present embodiment, the data processing module 2 includes a plurality of first processing units and one second processing unit. The first processing units are in one-to-one correspondence with the receiving units 11, the first processing units pre-store the filter frequencies of the filter films of the receiving units 11 corresponding to the first processing units, and after the first processing units receive the current intensity, the first processing units calculate luminosity values according to the current intensity and the pre-stored filter frequencies. The second processing unit calculates the light intensity proportion of the corresponding wave band by combining a plurality of luminosity values.
In some embodiments of the present invention, the temperature of the receiving module 1 is monitored by the alarm module 3, and when the temperature of the receiving module 1 exceeds a preset temperature, the alarm module 3 alarms, including:
monitoring the temperature of each receiving unit 11 by using the alarm module 3, and sending alarm information by the alarm module 3 when the temperature of any receiving unit 11 exceeds a preset temperature; wherein the alarm information comprises the position information of the receiving unit 11 on the SOC chip.
In this embodiment, the alarm module 3 monitors the temperature of each receiving unit 11 separately, which is beneficial to finding the position of the faulty receiving unit 11 accurately during the alarm.
In some embodiments of the invention, the alarm module 3 comprises a plurality of communication units and an alarm unit;
the communication units are in one-to-one correspondence with the receiving units 11 and are electrically connected, and the communication units store the position information of the corresponding receiving units 11;
when the receiving unit 11 exceeds a preset temperature, the receiving unit 11 sends an electric signal to a corresponding communication unit, and the communication unit sends the stored position information to an alarm unit for alarm.
In the present embodiment, the respective temperature monitoring of the receiving units 11 is realized by connecting a plurality of communication units to a plurality of receiving units 11 one by one. The communication unit stores the position information of the corresponding receiving unit 11, and when the temperature of the receiving unit 11 is too high, the communication unit sends the position information of the receiving unit 11 to the alarm unit to alarm, and the alarm unit outputs the position information of the failed receiving unit 11.
In some embodiments of the present invention, a thermistor is connected to the receiving unit 11 in an insulating manner, and the communication unit is connected to the thermistor, so that the temperature of the receiving unit 11 can be determined by the resistance change of the thermistor.
In the present embodiment, the communication unit realizes temperature monitoring of the receiving unit 11 by utilizing the characteristic that the temperature change of the thermistor causes the resistance change. The thermistor needs to be connected to the receiving unit in an insulating manner to prevent the thermistor from affecting the photoelectric effect of the receiving unit 11.
In some embodiments of the present invention, the light intensity value is calculated by the following formula:
E=（Ihv）/es
wherein E is a light intensity value, I is a current intensity, h is a Planck constant, v is a filtering frequency, E is a basic charge, and s is a receiving area of a receiving end.
In some embodiments of the present invention, the SOC chip further includes a storage module storing the photoelectric efficiency of each receiving unit 11;
the second processing unit obtains the proportion of different wave bands of infrared light according to different light intensity values obtained by different first processing units, and the second processing unit comprises:
the second processing unit obtains the proportion of different wave bands of the infrared light according to different light intensity values and the photoelectric efficiency of the receiving unit (11) corresponding to the light intensity values.
In this embodiment, the photoelectric effects generated in different wavebands are different, and in order to further improve the accuracy of the data, the photoelectric efficiency is used as a calculation parameter when the light intensities in different wavebands are compared. The luminosity value is multiplied by the photoelectric efficiency corresponding to the luminosity value, and the obtained value is closer to the original light intensity of the wave band.
It should be noted that the photoelectric efficiency may be obtained through experiments, or may be obtained directly according to parameters of the infrared receiving device used by the receiving unit 11.
In some embodiments of the invention, the ratio of different bands of infrared light is determined by the following formula:
wherein,for the ith bandLight intensity ratio->For the photoelectric efficiency of the ith band, -/->The light intensity value for the i-th band.
In some embodiments of the invention, the receiving unit 11 comprises an infrared photodetector.
In this embodiment, the infrared photodetector may be of a photoconductive type or a heterojunction type.
In some embodiments of the invention, the infrared photodetector includes an infrared receiving layer made of at least one of lead sulfide, lead selenide, mercury telluride, and titanium sesquioxide.
In this embodiment, the above materials are all materials capable of generating photoelectric effect with respect to infrared light.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. The infrared testing method based on the SOC chip is characterized by being applied to the SOC chip, wherein the SOC chip is electrically connected with a receiving module (1), and the SOC chip comprises a data processing module (2) and an alarm module (3); the receiving module (1) comprises a plurality of receiving units (11), one end of each receiving unit (11) for receiving the optical signals is a receiving end, and the receiving ends of different receiving units (11) are provided with filter films with different transmission frequencies;
the method comprises the following steps:
converting the received light into current by using a plurality of receiving units (11) respectively to obtain a plurality of current intensities;
calculating the light intensity proportion of the corresponding wave band according to the plurality of current intensities obtained by conversion of the receiving module (1) by utilizing a data processing module (2);
monitoring the temperature of the receiving module (1) by using an alarm module (3), and alarming by using the alarm module (3) when the temperature of the receiving module (1) exceeds a preset temperature;
the data processing module (2) comprises a plurality of first processing units and second processing units, the first processing units are in one-to-one correspondence with the receiving units (11), and the first processing units store filter frequency information of filter films of the receiving units (11) corresponding to the first processing units;
the calculating, by the data processing module (2), the light intensity ratio of the corresponding wave band according to the plurality of current intensities obtained by the receiving module (1) includes:
the first processing unit receives the current intensity of the receiving unit (11) corresponding to the first processing unit;
the first processing unit calculates a light intensity value according to the stored filtering frequency and the received current intensity;
the second processing unit obtains the proportion of different wave bands of infrared light according to different light intensity values obtained by different first processing units;
the temperature of the receiving module (1) is monitored by the alarm module (3), and when the temperature of the receiving module (1) exceeds a preset temperature, the alarm module (3) alarms, and the method comprises the following steps:
monitoring the temperature of each receiving unit (11) by using an alarm module (3), and sending alarm information by using the alarm module (3) when the temperature of any receiving unit (11) exceeds a preset temperature; wherein the alarm information comprises position information of the receiving unit (11) on the SOC chip;
the alarm module (3) comprises a plurality of communication units and an alarm unit;
a plurality of communication units are in one-to-one correspondence with the receiving units (11) and are electrically connected, and the communication units store the position information of the receiving units (11) corresponding to the communication units;
when the receiving unit (11) exceeds a preset temperature, the receiving unit (11) sends an electric signal to the corresponding communication unit, and the communication unit sends the stored position information to the alarm unit for alarm;
the receiving unit (11) is connected with a thermistor in an insulating way, the communication unit is connected with the thermistor, and the temperature of the receiving unit (11) is determined through the resistance change of the thermistor.
2. The infrared testing method of claim 1, wherein the light intensity value is calculated by the following formula:
E=（Ihv）/es
wherein E is a light intensity value, I is a current intensity, h is a Planck constant, v is the filtering frequency, E is a basic charge, and s is a receiving area of the receiving end.
3. The infrared test method according to claim 2, characterized in that the SOC chip further comprises a storage module storing the photoelectric efficiency of each of the receiving units (11);
the second processing unit obtains the proportion of different wave bands of infrared light according to different light intensity values obtained by different first processing units, and the second processing unit comprises:
the second processing unit obtains the proportion of different wave bands of infrared light according to different light intensity values and the photoelectric efficiency of the receiving unit (11) corresponding to the light intensity values.
4. The infrared testing method according to claim 3, wherein the ratio of different bands of infrared light is obtained by the following formula:
wherein,for the intensity ratio of the ith band, +.>For the photoelectric efficiency of the ith band, ei is the light intensity value of the ith band.
5. The infrared testing method according to claim 1, characterized in that the receiving unit (11) comprises an infrared photodetector.
6. The infrared testing method of claim 5, wherein the infrared photodetector comprises an infrared receiving layer made of at least one of lead sulfide, lead selenide, mercury telluride, and titanium sesquioxide.
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| CN102095699A (en) * | 2011-01-26 | 2011-06-15 | 宇星科技发展(深圳)有限公司 | Multicomponent gas analyzer and gas analysis detection system |
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