CN109088000B - Organic thin film transistor and preparation method thereof - Google Patents
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- Thin Film Transistor (AREA)
Abstract
The invention provides an organic thin film transistor and a preparation method thereof, belonging to the technical field of organic electronics and photoelectrons. The source and drain electrodes of the organic thin film transistor are formed on the surface of the substrate, an organic semiconductor layer is formed between the source and drain electrodes, an organic insulating layer is formed on one side of the organic semiconductor layer, which is far away from the substrate, an organic anti-sputtering layer is formed on one side of the organic insulating layer, which is far away from the organic semiconductor layer, and a grid electrode is formed on one side of the organic anti-sputtering layer, which is far away from the organic insulating layer. The preparation method of the organic thin film transistor is to form an organic insulating layer on the side of the organic semiconductor layer far away from the substrate. And forming an organic anti-sputtering layer made of a cross-linkable high polymer material on the side of the organic insulating layer far away from the organic semiconductor layer. And forming a grid electrode on one side of the organic anti-sputtering layer far away from the organic insulating layer. In the preparation process, the organic semiconductor layer and the organic insulating layer are protected through the formation of the organic anti-sputtering layer, so that the electrical property of the obtained transistor is better.
Description
Technical Field
The invention relates to the technical field of organic electronics and photoelectrons, in particular to an organic thin film transistor and a preparation method thereof.
Background
In recent years, Organic Thin Film Transistors (OTFTs) have been receiving attention from both academic and industrial fields due to their potential application prospects in terms of flexibility, large-area and low-cost active matrix displays, radio frequency tags, and the like, and have been developed in great quantities. In various OTFT device architectures, a top gate-bottom contact type structure is more beneficial to the large-scale manufacturing of the OTFT due to the advantages of high gate efficiency, low parasitic capacitance and the like.
In the prior art, in the process of preparing an organic thin film transistor, metal layers are deposited on an organic semiconductor layer and an organic insulating layer in a vacuum evaporation mode, and then a second metal layer and a third oxidation barrier layer are deposited by utilizing a magnetron sputtering technology to form a gate.
The direct vacuum evaporation of metal electrodes on the organic semiconductor layer and the organic insulating layer can damage the organic semiconductor layer and the organic insulating layer in the heat transfer process, and the performance of the transistor is influenced.
Disclosure of Invention
The invention aims to provide an organic thin film transistor with better electrical property.
Another objective of the present invention is to provide a method for manufacturing an organic thin film transistor, in which an organic anti-sputtering layer is formed during the manufacturing process to protect an organic semiconductor layer and an organic insulating layer, so that the electrical properties of the obtained transistor are better.
The invention is realized by adopting the following technical scheme:
an organic thin film transistor comprises a substrate, a grid electrode, a source electrode, a drain electrode, an organic semiconductor layer, an organic insulating layer and an organic anti-sputtering layer made of cross-linkable high polymer materials;
the source and drain electrodes are formed on the surface of the substrate, an organic semiconductor layer is formed between the source and drain electrodes, an organic insulating layer is formed on one side of the organic semiconductor layer, which is far away from the substrate, an organic anti-sputtering layer is formed on one side of the organic insulating layer, which is far away from the organic semiconductor layer, and a grid electrode is formed on one side of the organic anti-sputtering layer, which is far away from the organic insulating layer.
Further, in a preferred embodiment of the present invention, the crosslinkable polymer material includes at least one of polyacrylate, polysiloxane, polyurethane, polyethylene terephthalate, polybutylene terephthalate, and polyurea.
Furthermore, in a preferred embodiment of the present invention, the thickness of the organic anti-sputtering layer is 50-5000 nm; preferably, the thickness of the organic anti-sputtering layer is 100-3000 nm; preferably, the thickness of the organic anti-sputtering layer is 200-2000 nm.
A preparation method of an organic thin film transistor comprises the following steps: (1) forming an organic semiconductor layer on the substrate on which the active drain electrode is formed; (2) forming an organic insulating layer on one side of the organic semiconductor layer, which is far away from the substrate; (3) forming an organic anti-sputtering layer made of a cross-linkable high polymer material on one side of the organic insulating layer, which is far away from the organic semiconductor layer; (4) and forming a grid electrode on one side of the organic anti-sputtering layer far away from the organic insulating layer.
Further, in a preferred embodiment of the present invention, the method for preparing the organic anti-sputtering layer includes: the crosslinkable polymer material is coated on one side of the organic insulating layer far away from the organic semiconductor layer, and then the crosslinkable polymer material is cured.
Further, in a preferred embodiment of the present invention, the curing method may be uv curing or thermal curing.
Further, in a preferred embodiment of the present invention, before the step of coating the crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer, a step of performing surface plasma treatment on the organic insulating layer is further included.
Further, in a preferred embodiment of the present invention, after the curing, a step of performing a surface treatment on the organic anti-sputtering layer is further included.
Further, in a preferred embodiment of the present invention, the surface treatment method includes: and (3) standing the ethylene carbonate or propylene glycol methyl ether acetate on the surface of the organic anti-sputtering layer for 0.5-5min, and then carrying out heat treatment.
Further, in a preferred embodiment of the present invention, the method for manufacturing the gate includes: and forming a metal layer on one side of the organic anti-sputtering layer far away from the organic insulating layer, and carrying out exposure and etching treatment on the metal layer.
Compared with the prior art, the organic thin film transistor and the preparation method thereof provided by the preferred embodiment of the invention have the beneficial effects that:
an organic anti-sputtering layer made of cross-linkable high polymer materials is formed between the organic insulating layer and the grid electrode, so that the organic insulating layer and the organic semiconductor layer are not damaged in the process of forming the grid electrode, the mobility of the obtained organic thin film transistor is improved, the threshold voltage is reduced, the current ratio is increased, and the electrical performance of the organic thin film transistor is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments are briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without creative efforts, and the protection scope of the present invention also belongs to the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of an organic thin film transistor provided by the present invention.
Icon: 100-a substrate; 200-a gate; 300-source drain electrode; 310-a source electrode; 320-drain electrode; 400-an organic semiconductor layer; 500-an organic insulating layer; 600-organic anti-sputtering layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The organic thin film transistor and the method of fabricating the same according to the embodiments of the present invention will be described in detail below.
The preparation method of the organic thin film transistor comprises the following steps:
(1) the selection substrate, for example: a glass substrate, a silicon substrate; or flexible plastic substrates such as polyethylene naphthalate (PEN) substrates, Polyethersulfone (PES) substrates, polyethylene terephthalate (PET) substrates, Polyimide (PI) substrates, and polyvinyl alcohol (PVA) substrates. In this embodiment, the shape and thickness of the substrate are not limited as long as the organic thin film transistor can be manufactured.
(2) And forming source and drain electrodes on the surface of the substrate, optionally, the drain electrode is positioned in the middle of the substrate, the source electrodes comprise two, the two source electrodes are formed on two sides of the drain electrode at intervals, and the drain electrode and the two source electrodes are formed on the surface of the substrate.
In this embodiment, the source electrode and the drain electrode are made of the same material, and may be made of one or more metals including gold (Au), titanium (Ti), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), tungsten (W), molybdenum (Mo), chromium (Cr), neodymium (Nd), gold paste, silver paste, and copper paste; a conductive polymer; a metal oxide; the carbon material comprises graphene, carbon nanotubes and a doped or composite material; nano silver wire or nano copper wire. The method for forming the source-drain extremely thin film comprises one of magnetron sputtering, vacuum evaporation, ink jet printing, screen printing, gravure printing, chemical vapor deposition, roll-to-roll printing, micro-contact printing and nano-imprinting. The thickness of the electrode film is 0.1-500 nm, optionally the thickness of the electrode film is 10-300 nm, optionally the thickness of the electrode film is 20-100 nm.
Optionally, a first metal layer is formed on the surface of the substrate, and the first metal layer is subjected to patterning processing to form the source electrode and the drain electrode. In this embodiment, the method for forming the source and drain electrodes on the surface of the substrate is an existing method, and details are not described here.
(3) And forming an organic semiconductor layer on the substrate on which the source and drain electrode layers are formed. An organic semiconductor layer is formed on the source electrode, the drain electrode, and a portion of the substrate not covered by the drain electrode and the source electrode.
Specifically, a mixed solution is prepared, and then the mixed solution is coated on the source electrode, the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode by spin coating, spray coating, dip coating, doctor blade coating, contact coating or slit coating, so that the thickness of the obtained organic semiconductor layer is 5-200 nm, optionally 10-100 nm, optionally 15-50 nm, where the thickness refers to the thickness of the organic semiconductor layer formed on the source electrode and the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode.
In this embodiment, the mixed solution includes small organic molecules, a polymer binder, and an organic solvent, where the small organic molecules are semiconductor molecules such as acene compounds, thiophene compounds, or tetrathiafulvalene compounds, the polymer binder is a dibenzopentacyclic polymer compound and an arylamine polymer compound, and the organic solvent is one or a mixture of more of tetralin, mesitylene, o-methylanisole, xylene, phenetole, or bromobenzene.
(4) And forming an organic insulating layer on the side of the organic semiconductor layer far away from the substrate. The fluoropolymer insulating material is coated on the surface of the organic semiconductor layer far away from the substrate by spin coating, spray coating, dip coating, blade coating, contact coating or slit coating.
Optionally, the film thickness of the organic insulating layer is 10-1000 nm, optionally, the film thickness is 50-800 nm, optionally, the film thickness is 100-500 nm.
(5) And forming an organic anti-sputtering layer made of a cross-linkable high polymer material on one side of the organic insulating layer far away from the organic semiconductor layer.
In the prior art, an organic anti-sputtering layer is not arranged, metal layers are directly deposited on an organic semiconductor layer and an organic insulating layer in a vacuum evaporation mode, and then a second metal layer and a third oxidation barrier layer are deposited by utilizing a magnetron sputtering technology to form a grid electrode. The direct vacuum evaporation of metal electrodes on the organic semiconductor layer and the organic insulating layer can damage the organic semiconductor layer and the organic insulating layer in the heat transfer process, and the performance of the transistor is influenced. Meanwhile, the thickness of the film cannot be effectively controlled by the vacuum evaporation process, and the usually formed metal layer has thick center, thin periphery, poor uniformity and poor surface coverage. The vacuum evaporation process needs to reach higher vacuum degree, the vacuumizing process consumes time, and the manufacturing efficiency of the device substrate is reduced. Vacuum evaporation processes are difficult to scale up, have low throughput, and are not amenable to large-scale industrialization.
In this embodiment, the organic anti-sputtering layer is coated on the surface of the organic insulating layer, which is away from the organic semiconductor layer, and then the metal layer is directly deposited on the surface of the organic anti-sputtering layer, which is away from the organic insulating layer, by the magnetron sputtering technique, so that the step of depositing the metal layer in a vacuum evaporation manner in the prior art is omitted, and the above problem caused by depositing the metal layer in the vacuum evaporation manner can be effectively solved.
Meanwhile, an organic anti-sputtering layer is coated on the surface of the organic insulating layer, which is far away from the organic semiconductor layer, and then a metal layer is subjected to magnetron sputtering on the surface of the organic anti-sputtering layer, which is far away from the organic insulating layer. Due to the arrangement of the organic anti-sputtering layer, the organic insulating layer and the organic semiconductor layer can be protected, the organic insulating layer is prevented from being damaged in the magnetron sputtering process, and the electrical performance of the organic thin film transistor is improved.
In this embodiment, the crosslinkable polymer material includes at least one of polyacrylate, polysiloxane, polyurethane, polyethylene terephthalate, polybutylene terephthalate, and polyurea. The high molecular material of the organic anti-sputtering layer can be obtained by cross-linking reaction of one raw material or two or more raw materials.
The preparation method of the organic anti-sputtering layer comprises the following steps: the crosslinkable polymer material is coated on one side of the organic insulating layer far away from the organic semiconductor layer, and then the crosslinkable polymer material is cured. The crosslinkable polymer material can be orthogonal to the fluoropolymer, and the curing speed of the crosslinkable polymer material can be increased.
In detail, the crosslinkable polymer material is spin-coated on the surface of the organic insulating layer far from the organic semiconductor layer at a speed of 10-100 rpm/s, and then subjected to ultraviolet curing or thermal curing after the spin-coating. The heat curing treatment mode is specifically as follows: heat treatment is carried out for 2-10 min at the temperature of 100-150 ℃. Or the irradiation energy of the ultraviolet lamp is 200-2After ultraviolet irradiation for 10-60 s under the condition of (1), heat treatment is carried out for 2-10 min under the conditions of 100-150 ℃ to crosslink and solidify the crosslinkable high molecular material to form an organic anti-sputtering layer which is a crosslinkable network structure, has good compactness and high hardness, and can protect the organic insulating layer and the organic semiconductor layer.
The thickness of the organic anti-sputtering layer is 50-5000 nm; preferably, the thickness of the organic anti-sputtering layer is 100-3000 nm; preferably, the thickness of the organic anti-sputtering layer is 200-2000 nm. The organic anti-sputtering layer is too thin, and the organic anti-sputtering layer can be broken down when the gate is arranged by magnetron sputtering; the organic anti-sputtering layer is too thick, which increases the break-down voltage and break-down current of the gate. The thickness of the organic anti-sputtering layer is within the range, and the obtained organic thin film transistor has better electrical property.
In other embodiments, before the step of coating the crosslinkable polymer material on the side of the organic insulating layer away from the organic semiconductor layer, a step of performing surface plasma treatment on the organic insulating layer is further included. The surface of the organic insulating layer is subjected to plasma treatment, and then the organic anti-sputtering layer is coated on the surface of the organic insulating layer after the plasma treatment.
The organic thin film transistor has better wettability and adhesiveness of the organic insulating layer, prevents the organic insulating layer film from being separated from the organic anti-sputtering layer film, and can obtain an organic thin film transistor with better electrical property under the condition that the organic anti-sputtering layer is relatively thin.
Optionally, in this embodiment, the plasma gas is nitrogen N2Helium He and argon Ar or a mixture thereof. In this embodiment, the specific manner of the plasma treatment is as follows: the substrate provided with the organic insulating layer is placed in a plasma apparatus to be subjected to plasma treatment.
In other embodiments, after curing, the method further comprises the step of performing surface treatment on the organic anti-sputtering layer. The roughness of the organic anti-sputtering layer can be reduced, and the connection between the organic anti-sputtering layer and the grid electrode is firmer.
Specifically, the ethylene carbonate or propylene glycol methyl ether acetate is placed on the surface of the organic anti-sputtering layer for 0.5-5min and then is dried in a spinning mode, the ethylene carbonate or the propylene glycol methyl ether acetate can dissolve the surface of the organic anti-sputtering layer, the surface of the organic anti-sputtering layer is made to be smoother, the thickness of the organic anti-sputtering layer is reduced, and the electrical performance of the organic thin film transistor is improved.
And (3) after standing for 0.5-5min, performing heat treatment, and removing the ethylene carbonate or propylene glycol methyl ether acetate organic solvent.
(6) And forming a grid electrode on one side of the organic anti-sputtering layer far away from the organic insulating layer. And forming a grid on the surface of the organic anti-sputtering layer by a magnetron sputtering technology. Due to the arrangement of the organic anti-sputtering layer, the organic insulating layer and the organic semiconductor layer are not damaged in the magnetron sputtering process, the organic insulating layer and the organic semiconductor layer are well protected, and the electrical property of the organic thin film transistor can be improved.
In this embodiment, the gate is made of metal, and includes one or more of gold (Au), titanium (Ti), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), molybdenum (Mo), chromium (Cr), neodymium (Nd), and Indium Tin Oxide (ITO). Depositing on the surface of the organic anti-sputtering layer by a magnetron sputtering mode. The thickness of the electrode film is 5-1000 nm, optionally the thickness of the electrode film is 10-500 nm, optionally the thickness of the electrode film is 20-200 nm.
Specifically, the preparation method of the grid electrode comprises the following steps: and forming a metal layer on one side of the organic anti-sputtering layer far away from the organic insulating layer, and carrying out exposure and etching treatment on the metal layer. And depositing a metal layer on the surface of the organic anti-sputtering layer by a magnetron sputtering technology, coating a photoresist layer on the surface of the metal layer, and performing etching treatment after exposure and development processes to obtain the grid electrode.
Optionally, patterning the metal layer by etching, and then performing controlled reactive ion etching on the organic anti-sputtering layer, the organic insulating layer and the organic semiconductor layer by dry etching to form the OTFT device.
In other embodiments, the gate electrode, the organic anti-sputtering layer, the organic insulating layer, and the organic semiconductor layer are patterned by dry etching to form the OTFT device. The dry etching and etching methods are conventional and will not be described in detail herein.
In the organic thin film transistor obtained by the above preparation method, as shown in fig. 1, the organic thin film transistor includes a substrate 100, a gate electrode 200, a source/drain electrode 300, an organic semiconductor layer 400, an organic insulating layer 500, and an organic anti-sputtering layer 600 made of a crosslinkable polymer material. The source and drain electrodes 300 are formed on the surface of the substrate 100, the organic semiconductor layer 400 is formed between the source and drain electrodes 300, the organic insulating layer is formed on the side of the organic semiconductor layer 400 far away from the substrate 100, the organic anti-sputtering layer 600 is formed on the side of the organic insulating layer 500 far away from the organic semiconductor layer 400, and the gate electrode 200 is formed on the side of the organic anti-sputtering layer 600 far away from the organic insulating layer 500.
Optionally, the source and drain 300 includes a source 310 and a drain 320, the drain 320 is located in the middle of the substrate 100, the source 310 includes two sources 310, two sources 310 are formed at two sides of the drain 320 at intervals, and the drain 320 and two sources 310 are formed on the surface of the substrate 100.
Optionally, the crosslinkable polymeric material comprises at least one of polyacrylate, polysiloxane, polyurethane, polyethylene terephthalate, polybutylene terephthalate, and polyurea. Optionally, the thickness of the organic anti-sputtering layer 600 is 50-5000 nm; preferably, the thickness of the organic anti-sputtering layer 600 is 100-3000 nm; preferably, the thickness of the organic anti-sputtering layer 600 is 200-2000 nm.
The mobility of the finally obtained organic thin film transistor is increased, the threshold voltage is reduced, the current ratio is increased, and the electrical property of the organic thin film transistor is greatly improved.
Example 1
The preparation method of the organic thin film transistor comprises the following steps:
(1) and selecting a glass substrate, and forming a source drain electrode with the thickness of 50nm on the surface of the glass substrate.
(2) And coating a mixed solution consisting of small organic molecules, a polymer binder and an organic solvent on the surfaces of the source electrode, the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode to form an organic semiconductor layer with the thickness of 30 nm.
(3) And coating a fluorine polymer material on the surface of the organic semiconductor layer far away from the substrate to form an organic insulating layer with the thickness of 300 nm.
(4) Coating a crosslinkable high molecular material on the surface of the organic insulating layer far away from the semiconductor layer at the speed of 25rpm/s, and irradiating the surface with ultraviolet lamp at the irradiation energy of 400mJ/cm2Is irradiated for 22s under ultraviolet and then is heat-treated at 120 ℃ for 5min to form an organic anti-sputtering layer with a thickness of 650 nm.
(5) And performing magnetron sputtering on the surface of the organic anti-sputtering layer, which is far away from the organic insulating layer, of the metal layer, coating a photoresist layer on the surface of the metal layer, and performing exposure, development and etching treatment to obtain a grid electrode, thereby obtaining the organic thin film transistor.
Example 2
The preparation method of the organic thin film transistor comprises the following steps:
(1) and selecting a glass substrate, and forming a source drain electrode with the thickness of 50nm on the surface of the glass substrate.
(2) And coating a mixed solution consisting of small organic molecules, a polymer binder and an organic solvent on the surfaces of the source electrode, the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode to form an organic semiconductor layer with the thickness of 30 nm.
(3) And coating a fluorine polymer material on the surface of the organic semiconductor layer far away from the substrate to form an organic insulating layer with the thickness of 300 nm.
(4) And performing surface plasma treatment on the organic insulating layer under the condition that the plasma gas is nitrogen.
(5) Coating a crosslinkable high molecular material on the surface of the organic insulating layer subjected to surface plasma treatment, which is far away from the semiconductor layer, at a speed of 25rpm/s, and irradiating the surface with ultraviolet light at an irradiation energy of 400mJ/cm2Is irradiated for 22s under ultraviolet and then is thermally treated at 120 ℃ for 5min to form an organic anti-sputtering layer with a thickness of 600 nm.
(6) And performing magnetron sputtering on the surface of the organic anti-sputtering layer, which is far away from the organic insulating layer, of the metal layer, coating a photoresist layer on the surface of the metal layer, and performing exposure, development and etching treatment to obtain a grid electrode, thereby obtaining the organic thin film transistor.
Example 3
The preparation method of the organic thin film transistor comprises the following steps:
(1) and selecting a glass substrate, and forming a source drain electrode with the thickness of 50nm on the surface of the glass substrate.
(2) And coating a mixed solution consisting of small organic molecules, a polymer binder and an organic solvent on the surfaces of the source electrode, the drain electrode and the area of the substrate not covered by the source electrode and the drain electrode to form an organic semiconductor layer with the thickness of 30 nm.
(3) And coating a fluorine polymer material on the surface of the organic semiconductor layer far away from the substrate to form an organic insulating layer with the thickness of 300 nm.
(4) And performing surface plasma treatment on the organic insulating layer under the condition that the plasma gas is nitrogen.
(5) Coating a crosslinkable high molecular material on the surface of the organic insulating layer subjected to surface plasma treatment, which is far away from the semiconductor layer, at a speed of 25rpm/s, and irradiating the surface with ultraviolet light at an irradiation energy of 400mJ/cm2Under the condition of (1), ultraviolet irradiation is carried out for 22s, and then heat treatment is carried out for 5min under the condition of 120 ℃. And then standing the substrate surface after heat treatment for 1min by using ethylene carbonate, and then carrying out heat treatment for 5min at the temperature of 120 ℃ to form an organic anti-sputtering layer with the thickness of 400 nm.
(6) And performing magnetron sputtering on the surface of the organic anti-sputtering layer, which is far away from the organic insulating layer, of the metal layer, coating a photoresist layer on the surface of the metal layer, and performing exposure, development and etching treatment to obtain a grid electrode, thereby obtaining the organic thin film transistor.
Experimental example 1
The mobility, threshold voltage, and current on-off ratio of the organic thin film transistors obtained by the methods of manufacturing the organic thin film transistors provided in examples 1 to 3 were examined, and the surface roughness of the organic anti-sputtering layer was examined. Comparative example 1 compared with example 1, the organic thin film transistor was obtained without performing the formation of the organic anti-sputtering layer only under the same other conditions, and the mobility, threshold voltage, and current on-off ratio of the organic thin film transistor obtained in comparative example 1 were examined. Table 1 was obtained:
TABLE 1 Electrical Properties of organic thin film transistors
As can be seen from table 1, in example 1, compared to comparative example 1, the mobility and the current switching ratio of the organic thin film transistor are significantly improved, the threshold voltage is significantly reduced, and the electrical properties of the organic thin film transistor are better. In example 1, compared to example 2, the organic thin film transistor obtained by performing the surface plasma treatment on the organic insulating layer and then forming the organic anti-sputtering layer has improved mobility and current on-off ratio, reduced threshold voltage, and better electrical properties. Compared with the embodiment 3, the mobility and the current on-off ratio of the organic thin film transistor obtained by performing the surface treatment on the organic anti-sputtering layer are improved, the threshold voltage is reduced, and the electrical property of the organic thin film transistor is better.
The embodiments described above are some, but not all embodiments of the invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (4)
1. A preparation method of an organic thin film transistor is characterized by comprising the following steps:
(1) forming an organic semiconductor layer on the substrate on which the active drain electrode is formed;
(2) forming an organic insulating layer on one side of the organic semiconductor layer, which is far away from the substrate;
(3) forming an organic anti-sputtering layer made of a cross-linkable high polymer material on one side of the organic insulating layer, which is far away from the organic semiconductor layer;
(4) forming a grid on one side of the organic anti-sputtering layer, which is far away from the organic insulating layer;
further comprising a step of subjecting the organic insulating layer to surface plasma treatment;
the method also comprises the step of carrying out surface treatment on the organic anti-sputtering layer, wherein the surface treatment mode is as follows: and (3) standing the ethylene carbonate or propylene glycol methyl ether acetate on the surface of the organic anti-sputtering layer for 0.5-5min, and then carrying out heat treatment.
2. The method according to claim 1, wherein the method for preparing the organic anti-sputtering layer comprises: coating the crosslinkable polymer material on one side of the organic insulating layer far away from the organic semiconductor layer, and curing the crosslinkable polymer material.
3. The method according to claim 2, wherein the curing means is ultraviolet curing or thermal curing.
4. The method of claim 1, wherein the method of forming the gate comprises: and forming a metal layer on one side of the organic anti-sputtering layer, which is far away from the organic insulating layer, and carrying out exposure and etching treatment on the metal layer.
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| AU2002343058A1 (en) * | 2001-12-19 | 2003-06-30 | Merck Patent Gmbh | Organic field effect transistor with an organic dielectric |
| CN101669225A (en) * | 2007-04-25 | 2010-03-10 | 默克专利股份有限公司 | Process for preparing an electronic device |
| CN105336860A (en) * | 2015-11-09 | 2016-02-17 | 南京邮电大学 | Flexible low-voltage organic field effect transistor and manufacturing method thereof |
| CN107644936A (en) * | 2017-09-27 | 2018-01-30 | 信利半导体有限公司 | A kind of OTFT and preparation method thereof |
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| AU2002343058A1 (en) * | 2001-12-19 | 2003-06-30 | Merck Patent Gmbh | Organic field effect transistor with an organic dielectric |
| CN101669225A (en) * | 2007-04-25 | 2010-03-10 | 默克专利股份有限公司 | Process for preparing an electronic device |
| CN105336860A (en) * | 2015-11-09 | 2016-02-17 | 南京邮电大学 | Flexible low-voltage organic field effect transistor and manufacturing method thereof |
| CN107644936A (en) * | 2017-09-27 | 2018-01-30 | 信利半导体有限公司 | A kind of OTFT and preparation method thereof |
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