CN109085237A - A kind of ultrasonic scanning device and scan method - Google Patents
A kind of ultrasonic scanning device and scan method Download PDFInfo
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- CN109085237A CN109085237A CN201810634202.XA CN201810634202A CN109085237A CN 109085237 A CN109085237 A CN 109085237A CN 201810634202 A CN201810634202 A CN 201810634202A CN 109085237 A CN109085237 A CN 109085237A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/26—Arrangements for orientation or scanning by relative movement of the head and the sensor
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Abstract
The present invention provides a kind of ultrasonic scanning device and scan method, and scan method includes: with wafer radius to be measured for probe movement routine, and obtains time moving distance according to pixel size；Total scanning circle number is obtained according to wafer radius to be measured and time moving distance；It is mobile spacing as origin, with equal moving distance using the wafer center of circle to be measured, ultrasonic probe successively carries out position along probe movement routine from the inside to the outside and moves；After the every position of completion of ultrasonic probe is mobile, a circular scan path is formed as radius using the distance of the mobile terminal in the secondary position to initial point；Wafer to be checked at the uniform velocity rotates a circle by default rotation speed, to be scanned to circular scan path；Wherein, rotation speed is preset as the increase of the radius of corresponding circular scan path is gradually reduced；The scan data of acquisition is handled, scan image is generated.Solve the problems, such as that production capacity waste, low efficiency cause cost to increase when C_SAM board detection in the prior art through the invention.
Description
Technical field
The present invention relates to semiconductor detection fields, more particularly to a kind of ultrasonic scanning device and scan method.
Background technique
Ultrasonic microscope (SAT, Scanning Acoustic Tomography；Also known as C-SAM, C-mode
Scanning Acoustic Microscope) it is a kind of reflection rate and energy by high-frequency ultrasonic and different densities material
The different boards detected are measured, are widely used in semiconductor rear section processing procedure.Ultrasonic microscope output ultrasonic wave signal, when
Signal partially can be reflected and be penetrated when encountering the interface of different materials, such transmitting echo strength can because density of material is different and
Difference is examined the defect of semiconductor device inside based on this characteristic and it is imaged according to received signal variation.
In field of semiconductor manufacture, C_SAM board is mainly used for wafer manufacture and encapsulation field, is usually used in non-destructive testing electricity
The defects of sub- component, LED, layering of metal substrate, crackle (crackle, layering, cavity etc.)；Material is differentiated by picture contrast
Expect internal acoustic impedance difference, determines defect shape and size, determines defect orientation.Ultrasonic microscope is applied to CIS-BSI (back
Illuminated cmos image sensor) product detection in, be mainly used in bonding (bonding) interface bubble detection, have very
High recall rate.
Since C_SAM board needs should detect the product of various shapes, using unified pros
The setting of shape scanning area；As depicted in figs. 1 and 2, it using the diameter d of wafer 1 ' as the width of scanning area 2 ' and length, is carrying out
When scanning, the chuck for propping up wafer 1 ' is stationary namely wafer 1 ' is stationary, and the probe passed through above mobile wafer 1 ' is real
Now it is scanned by scan path 3 '；Although the object that such scan method detects needed for capable of covering, relative to wafer 1 '
For, the production capacity of a part of white space can be lost, while reducing detection efficiency；Large-scale semiconductors manufacture is led
Domain, seldom capacity loss can also bring the cost of biggish man power and material to increase.
Therefore, the efficiency of C_SAM board detection how is improved, and then reduces production cost, it has also become those skilled in the art
One of member's urgent problem to be solved.
Summary of the invention
In view of the foregoing deficiencies of prior art, it the purpose of the present invention is to provide a kind of ultrasonic scanning device and sweeps
Method is retouched, production capacity waste, low efficiency cause cost to increase when for solving the problems, such as C_SAM board detection in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of scan method of ultrasonic scanning device,
The scan method includes:
S1: the probe movement routine using the radius of wafer to be detected as ultrasonic probe, while according to the pixel of setting
Size obtains equal secondary moving distance of the ultrasonic probe in the probe movement routine；
S2: according to the radius of the wafer to be detected and the time moving distance, the total of the ultrasonic probe is obtained
Scanning circle number；
S3: using the center of circle of the wafer to be detected as initial point, while using the time moving distance as every time
Mobile spacing, the ultrasonic probe along the probe movement routine from the inside to the outside successively carry out position move, until its shifting
Dynamic number is identical with total scanning circle number；
S4: after the every position of completion of the ultrasonic probe is mobile, with the mobile terminal in the secondary position to starting
The distance of origin is as radius, in forming a circular scan path on the wafer to be detected；The wafer to be detected is by default
Rotation speed at the uniform velocity rotates a circle, to be scanned by the ultrasonic probe to the circular scan path；Wherein, described
Default rotation speed is gradually reduced with the increase of the radius of corresponding circular scan path；
S5: handling the scan data of acquisition, generates scan image.
Optionally, in the S2, time moving distance and the pixel size are equal, and number is enclosed in total scanning are as follows:
N=R/ Δ x
Wherein, N indicates that total scanning circle number, R indicate that the radius of the wafer to be detected, Δ x indicate time moving distance.
Optionally, by adjusting the default rotation speed, when making the scanning of each pixel on the wafer to be detected
Between it is identical.
Optionally, in the S4, the specific method for obtaining the default rotation speed includes:
S4-1: the sweep time of setting single pixel point, while according to the radius of the circular scan path and the picture
Plain size obtains the pixel quantity in the circular scan path；
S4-2: according to the sweep time of pixel quantity and single pixel point in the circular scan path, institute is obtained
State the total scanning time of circular scan path；
S4-3: it according to the radius of the circular scan path and the total scanning time, obtains and the circular scan road
The corresponding default rotation speed of diameter.
Optionally, in the S4-1, according to the radius of the circular scan path and the pixel size, the circle is obtained
The formula of pixel quantity on shape scan path are as follows:
Wherein, Mn indicates the pixel quantity in the circular scan path, and n indicates the movement time of the ultrasonic probe
Number, Δ x indicate time moving distance, and D indicates pixel size.
Optionally, in the S4-2, according in the circular scan path pixel quantity and single pixel point sweep
The time is retouched, the formula of the total scanning time of the circular scan path is obtained are as follows:
T=Mn × Ts
Wherein, T indicates the total scanning time of the circular scan path, and Mn indicates the pixel in the circular scan path
Point quantity, Ts indicate the sweep time of single pixel point.
Optionally, in the S4-3, according to the radius of the circular scan path and the total scanning time, acquisition and institute
State the formula of the corresponding default rotation speed of circular scan path are as follows:
Wherein, v indicates default rotation speed, and n indicates that the mobile number of the ultrasonic probe, Δ x indicate secondary mobile
Distance, T indicate the total scanning time of the circular scan path.
The present invention also provides a kind of ultrasonic scanning device, the ultrasonic scanning device is included at least: chuck, ultrasound
Wave probe, rotating mechanism, driving mechanism and scan data processing module, the chuck is set on the rotating mechanism, described
Ultrasonic probe is set to the top of the chuck vertically downward, the driving mechanism and the scan data processing module with
The ultrasonic probe connection；Wherein,
The driving mechanism is using the center of circle for the wafer to be detected being placed on the chuck as initial point, with time shifting
Dynamic distance as mobile spacing every time, control the ultrasonic probe along the wafer to be detected radius from the inside to the outside successively
It is mobile to carry out position；
After the every position of completion of the ultrasonic probe is mobile, the rotating mechanism passes through described in chuck control
Wafer to be detected at the uniform velocity rotates a circle by default rotation speed, so that the ultrasonic probe is to the circle on the wafer to be detected
Shape scan path is scanned, and distance of the circular scan path using the mobile terminal in the secondary position to initial point is as partly
Diameter is formed；Wherein, the default rotation speed is controlled by the rotating mechanism, justifies the default rotation speed with corresponding
The increase of the radius of shape scan path is gradually reduced；
The scan data processing module handles the scan data of acquisition, generates scan image.
Optionally, the ultrasonic scanning device further include: vacuum adsorption mechanism, the vacuum adsorption mechanism include: true
Empty adsorbent chamber and getter device, wherein the vacuum suction chamber penetrates through the upper and lower surfaces of the chuck, the getter device with
The vacuum suction chamber is connected to far from one end of the chuck upper surface.
Optionally, the ultrasonic scanning device further include: vacuum adsorption mechanism, the vacuum adsorption mechanism include: true
Empty adsorbent chamber, total adsorbent chamber and getter device, wherein the vacuum suction chamber be set to the chuck in and with the chuck
Upper surface perforation, total adsorbent chamber are set in the chuck below the vacuum suction chamber and penetrate through with the vacuum suction chamber,
The getter device is connected to total adsorbent chamber.
As described above, a kind of ultrasonic scanning device of the invention and scan method, have the advantages that and pass through this
The ultrasonic scanning device and scan method are invented, so that the area that the exterior contour of scanning area and wafer to be detected is covered
Domain is consistent, greatly reduces the sweep time of single-wafer, so that the promotion amplitude of production capacity is reached 22% with lower cost；Simultaneously
Also by reducing the high frequency motion number of driving mechanism, to extend the service life of driving mechanism；More pass through vacuum adsorption machine
The setting of structure reduces crystal round fringes to be detected in rotary course because of damage problem caused by local pressure.
Detailed description of the invention
Fig. 1 is shown as the schematic diagram of scanning area in the prior art.
Fig. 2 is shown as the schematic diagram of scan path in the prior art.
Fig. 3 a is shown as the structural schematic diagram of ultrasonic scanning device of the present invention.
Fig. 3 b is shown as a kind of sectional view of the ultrasonic scanning device of the present invention along the direction AA '.
Fig. 3 c is shown as another sectional view of the ultrasonic scanning device of the present invention along the direction AA '.
Fig. 3 d is shown as the top view of ultrasonic scanning device of the present invention, wherein the top view does not include described
Ultrasonic probe.
Fig. 4 is shown as the scan method flow chart of ultrasonic scanning device of the present invention.
Fig. 5 a is shown as ultrasonic scanning device of the present invention in the state diagram of initial position.
Fig. 5 b is shown as ultrasonic scanning device of the present invention in the top view of initial position, wherein the top view
It does not include the ultrasonic probe.
Fig. 6 a is shown as the state diagram that ultrasonic scanning device of the present invention is moved to the second position from initial position.
Fig. 6 b is shown as the top view that ultrasonic scanning device of the present invention is moved to the second position from initial position,
In, the top view does not include the ultrasonic probe.
Fig. 7 a is shown as the state diagram that ultrasonic scanning device of the present invention is moved to the third place from the second position.
Fig. 7 b is shown as the top view that ultrasonic scanning device of the present invention is moved to the third place from the second position,
In, the top view does not include the ultrasonic probe.
Fig. 8 a is shown as the shape that ultrasonic scanning device of the present invention is moved to the position (n-1) from the position (n-2)
State figure.
Fig. 8 b is shown as ultrasonic scanning device of the present invention and is moved to bowing for the position (n-1) from the position (n-2)
View, wherein the top view does not include the ultrasonic probe.
Fig. 9 a is shown as the state diagram that ultrasonic scanning device of the present invention is moved to the n-th position from the position (n-1).
Fig. 9 b is shown as the top view that ultrasonic scanning device of the present invention is moved to the n-th position from the position (n-1),
Wherein, the top view does not include the ultrasonic probe.
Component label instructions
1 ' chuck
2 ' scanning areas
3 ' scan paths
1 chuck
2 ultrasonic probes
3 rotating mechanisms
4 wafers to be detected
5 vacuum adsorption mechanisms
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 3 a to Fig. 9 b.It should be noted that diagram provided in the present embodiment only illustrates in a schematic way
Basic conception of the invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in Fig. 3 a to Fig. 3 d, a kind of ultrasonic scanning device, the ultrasonic scanning device are present embodiments provided
It includes at least: chuck 1, ultrasonic probe 2, rotating mechanism 3, driving mechanism (not shown) and scan data processing module
(not shown), wherein the chuck 1 is set to 3 on the rotating mechanism, and the ultrasonic probe 2 is arranged vertically downward
In the top of the chuck 1, the driving mechanism and the scan data processing module are connect with the ultrasonic probe 2.
As shown in Fig. 3 a to Fig. 3 d, the chuck 1 is for clamping and fixing the wafer to be detected 4.Preferably, in this reality
It applies in example, the chuck 1 clamps by vacuum suction mode and fix the wafer to be detected 4, to avoid because being pressed from both sides using pin foot
When holding and fixing the wafer 4 to be detected, the edge of the wafer 4 to be detected is in rotary course because damaging caused by local pressure
Hurt problem.
As shown in Figure 3b, in one embodiment, the ultrasonic scanning device further include: vacuum adsorption mechanism 5, it is described true
Empty adsorbing mechanism 5 includes: vacuum suction chamber and getter device (not shown), wherein described in the vacuum suction chamber perforation
The upper and lower surfaces of chuck 1, the getter device are connected to the vacuum suction chamber far from one end of 1 upper surface of chuck.It is logical
It crosses the getter device to vacuumize the vacuum suction chamber, by the crystalline substance to be detected in such a way that realization is by vacuum suction
Circle 4 is clamped and is fixed on the chuck 1.
As shown in Figure 3c, in another embodiment, the vacuum adsorption mechanism 5 include: vacuum suction chamber, total adsorbent chamber and
Getter device (not shown), wherein the vacuum suction chamber is set in the chuck 1 and the upper surface with the chuck 1
Perforation, total adsorbent chamber is set in the chuck 1 below the vacuum suction chamber and penetrates through with the vacuum suction chamber, described
Getter device is connected to total adsorbent chamber.Preferably, the coupling part of total adsorbent chamber and the getter device is located at institute
It states in rotating mechanism 3.The getter device is vacuumized the vacuum suction chamber by total adsorbent chamber, logical to realize
Vacuum suction mode is crossed to clamp the wafer 4 to be detected and be fixed on the chuck 1.
As shown in Figure 3a, the cross section of the ultrasonic probe 2 is circle；In practical applications, the ultrasonic probe 2
Cross section may be configured as arbitrary shape, be not limited to this embodiment.The ultrasonic probe 2 is sent out to the wafer 4 to be detected
Ultrasonic signal is penetrated, and receives the ultrasonic signal fed back from the wafer 4 to be detected, passes through the ultrasonic signal of feedback
The internal image of the wafer to be detected 4 is obtained, and analyzes the quality of the wafer to be detected 4 accordingly.In the present embodiment, institute
Stating ultrasonic probe 2 includes that electric energy turns ultrasound unit (not shown), transmitting unit (not shown), receiving unit
(not shown) and ultrasonic wave turn electric energy unit (not shown).The electric energy turns ultrasound unit and converts electrical signals to
Corresponding ultrasonic signal；The transmitting unit connects the electric energy and turns ultrasound unit, and the electric energy is turned ultrasound unit
The ultrasonic signal of output is launched, and the ultrasonic signal is vertically got on the wafer to be detected 4, according to the ultrasound
The difference of wave signal energy, the depth squeezed into is different, can be set, be will not repeat them here as needed；The reception is single
Member receives the ultrasonic signal fed back from the wafer 4 to be detected, and scanning number is had in the ultrasonic signal fed back
It is believed that breath；The ultrasonic wave turns electric energy unit and connects the receiving unit, the ultrasonic signal that the receiving unit is received
It is converted into electric signal, for follow-up system analysis.
The rotating mechanism 3 includes rotary shaft and rotary drive motor (not shown), wherein the rotary shaft and institute
State the connection of chuck 1, the rotary drive motor and the rotation axis connection；The rotation is driven by the rotary drive motor
Axis is rotated, to drive the chuck 1 to be rotated, so that the wafer to be detected 4 be driven to be rotated；Pass through control simultaneously
The rotation speed for adjusting the rotary shaft can be realized by making the rotary drive motor, to adjust the pre- of the wafer to be detected 4
If rotation speed.In the present embodiment, specially after the every position of completion of the ultrasonic probe 2 is mobile, the rotation
Mechanism 3 controls the wafer to be detected 4 by the chuck 1 and at the uniform velocity rotates a circle by default rotation speed v, so that the ultrasound
The circular scan path that wave is popped one's head on 2 pairs of wafers 4 to be detected is scanned, and the circular scan path is moved with the secondary position
The distance of dynamic terminal to initial point is formed as radius；Wherein, the default rotation speed is controlled by the rotating mechanism 3
V is spent, is gradually reduced the default rotation speed v with the increase of the radius of corresponding circular scan path, to ensure to scan number
According to fidelity.Preferably, the default rotation speed v is controlled by the rotating mechanism 3, makes the default rotation speed v
As the increase of the radius of corresponding circular scan path is gradually reduced, so that the single pixel on the wafer to be detected 4
The sweep time of point is identical.It should be noted that the sweep time of the single pixel point can be according to the guarantor of actual scanning data
True property requires to be selected, and does not just repeat one by one herein.
The driving mechanism (not shown) includes drive shaft and driving motor, wherein the drive shaft surpasses with described
Sonic probe 2 connects, the driving motor and the driving axis connection, and the driving motor passes through described in drive shaft drive
It is mobile that ultrasonic probe 2 carries out position；The specially described driving motor controls 2 edge of ultrasonic probe by the drive shaft
It is mobile that the radius R of the wafer to be detected 4 successively carries out position from the inside to the outside, wherein in the moving process of position, to be placed in
The center of circle of wafer to be detected 4 on the chuck 1 is as initial point O, using equal moving distance Δ x as between each movement
Away from.It should be noted that the design of the probe movement routine through this embodiment, greatly reduces the height of the driving motor
Frequency times of exercise, to extend the service life of the driving motor.
The scan data processing module (not shown) generates scanning for handling the scan data of acquisition
Image is analyzed for subsequent.
Embodiment two
As shown in figure 4, the present embodiment provides a kind of scan method of ultrasonic scanning device, the scan method includes:
S1: using the radius R of wafer to be detected as the probe movement routine of ultrasonic probe, while according to the pixel of setting
Size D obtains equal secondary moving distance Δ x of the ultrasonic probe in the probe movement routine.
Preferably, in the present embodiment, the time moving distance is equal with the pixel size；It should be noted that
The pixel size D is determined by the performance parameter of sensor in the ultrasonic probe, described with the determination of ultrasonic probe
Pixel size D namely determination.
S2: according to the radius R of the wafer to be detected and the time moving distance Δ x, the ultrasonic probe is obtained
Total scanning enclose number N.
As an example, time moving distance and the pixel size are equal, and number is enclosed in total scanning in the S2
Are as follows:
N=R/ Δ x
Wherein, N indicates that total scanning circle number, R indicate that the radius of the wafer to be detected, Δ x indicate time moving distance.
S3: using the center of circle O of the wafer to be detected as initial point, while using the time moving distance Δ x as
Each mobile spacing, the ultrasonic probe successively carry out position along the probe movement routine from the inside to the outside and move, until
It is identical with total scanning circle number N that it moves number.
S4: after the every position of completion of the ultrasonic probe is mobile, with the mobile terminal in the secondary position to starting
The distance of origin is as radius, in forming a circular scan path on the wafer to be detected；The wafer to be detected is by default
Rotation speed at the uniform velocity rotates a circle, to be scanned by the ultrasonic probe to the circular scan path, to realize
It (is circle that the scanning area of the ultrasonic scanning device is consistent with the region that the exterior contour of the wafer to be detected is covered
Shape region)；Wherein, the default rotation speed is gradually reduced with the increase of the radius of corresponding circular scan path.
As an example, making the scanning of each pixel on the wafer to be detected by adjusting the default rotation speed v
Time is identical.
As an example, in the S4, the specific method for obtaining the default rotation speed v includes:
S4-1: the sweep time of setting single pixel point, while according to the radius of the circular scan path and the picture
Plain size obtains the pixel quantity in the circular scan path；It should be noted that the sweep time of each pixel
It can require to be selected according to the fidelity of actual scanning data, just not repeat one by one herein.
Specifically, according to the radius of the circular scan path and the pixel size, obtaining the circle in the S4-1
The formula of pixel quantity on shape scan path are as follows:
Wherein, Mn indicates the pixel quantity in the circular scan path, and n indicates the movement time of the ultrasonic probe
Number, Δ x indicate time moving distance, and D indicates pixel size.
S4-2: according to the sweep time of pixel quantity and single pixel point in the circular scan path, institute is obtained
State the total scanning time of circular scan path.
Specifically, in the S4-2, according in the circular scan path pixel quantity and single pixel point sweep
The time is retouched, the formula of the total scanning time of the circular scan path is obtained are as follows:
T=Mn × Ts
Wherein, T indicates the total scanning time of the circular scan path, and Mn indicates the pixel in the circular scan path
Point quantity, Ts indicate the sweep time of single pixel point.
S4-3: it according to the radius of the circular scan path and the total scanning time, obtains and the circular scan road
The corresponding default rotation speed of diameter.
Specifically, in the S4-3, according to the radius of the circular scan path and the total scanning time, acquisition and institute
State the formula of the corresponding default rotation speed of circular scan path are as follows:
Wherein, v indicates default rotation speed, and n indicates that the mobile number of the ultrasonic probe, Δ x indicate secondary mobile
Distance, T indicate the total scanning time of the circular scan path.
S5: handling the scan data of acquisition, generates scan image.
It is compared below incorporated by reference to scan method described in the present embodiment with existing scan method, to absolutely prove this implementation
The advantage of the example scan method.
Assuming that scanning area square in existing scan method is divided into 6000*6000 pixel, with ultrasonic probe
Uniline maximum speed 1000mm/s, the radius of full wafer wafer to be detected are 150mm, and pixel size D is 50um, while with this implementation
It is illustrated for the sweep time of example single pixel is identical as the sweep time of existing single pixel.
As depicted in figs. 1 and 2, the time of scanning full wafer wafer to be detected is in existing scan methodThe sweep time of average every row isSpecific to single picture
The sweep time of vegetarian refreshments is
As shown in Fig. 5 a to Fig. 8 b, time moving distance Δ x is 50um, total scanning circle numberAs shown in Fig. 5 a to Fig. 6 b, the ultrasonic probe is moved to position W2 from position W1
When, it is d1 in the circular scan path formed on the wafer to be detected, the radius of circular scan path is Δ x, therefore it is swept
Retouching the time isAs shown in figs. 7 a and 7b, the ultrasonic probe is from position
When setting W2 and being moved to position W3, in the circular scan path formed on the wafer to be detected be d2, circular scan path
Radius is 2 Δ x, therefore its sweep time isAs figures 8 a and 8 b show,
When the ultrasonic probe is moved to Wn-1 from position Wn-2, it is in the circular scan path formed on the wafer to be detected
The radius of dn-1, circular scan path are (n-1) Δ x, therefore its sweep time isAs shown in figures 9 a and 9b, the ultrasonic probe is from position
When setting Wn-1 and being moved to edge, in the circular scan path formed on the wafer to be detected be dn, circular scan path
Radius is n Δ x=150mm, therefore its sweep time isTherefore total
Sweep time is
It can be seen that total scanning time is when being scanned by existing scan method to full wafer wafer to be detected
1800s；When the scan method is scanned full wafer wafer to be detected through this embodiment, total scanning time is about
1413s；Therefore, for only for monolithic wafer to be detected, compared to existing scan method, scan method section described in the present embodiment
The production capacity for saving about 22%, to substantially increase scan efficiency.
In conclusion a kind of ultrasonic scanning device of the invention and scan method, have the advantages that and pass through this
The ultrasonic scanning device and scan method are invented, so that the area that the exterior contour of scanning area and wafer to be detected is covered
Domain is consistent, greatly reduces the sweep time of single-wafer, so that the promotion amplitude of production capacity is reached 22% with lower cost；Simultaneously
Also by reducing the high frequency motion number of driving mechanism, to extend the service life of driving mechanism；More pass through vacuum adsorption machine
The setting of structure reduces crystal round fringes to be detected in rotary course because of damage problem caused by local pressure.So the present invention
It effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of scan method of ultrasonic scanning device, which is characterized in that the scan method includes:
S1: the probe movement routine using the radius of wafer to be detected as ultrasonic probe, while according to the pixel size of setting,
Obtain equal secondary moving distance of the ultrasonic probe in the probe movement routine；
S2: according to the radius of the wafer to be detected and the time moving distance, total scanning of the ultrasonic probe is obtained
Enclose number；
S3: using the center of circle of the wafer to be detected as initial point, while using the time moving distance as each shifting
Dynamic spacing, the ultrasonic probe successively carries out position along the probe movement routine from the inside to the outside and moves, until its movement time
It is several identical with total scanning circle number；
S4: after the every position of completion of the ultrasonic probe is mobile, with the mobile terminal in the secondary position to initial point
Distance as radius, in forming a circular scan path on the wafer to be detected；The wafer to be detected is by default rotation
Speed at the uniform velocity rotates a circle, to be scanned by the ultrasonic probe to the circular scan path；Wherein, described default
Rotation speed is gradually reduced with the increase of the radius of corresponding circular scan path；
S5: handling the scan data of acquisition, generates scan image.
2. the scan method of ultrasonic scanning device according to claim 1, which is characterized in that described equal in the S2
Secondary moving distance and the pixel size are equal, and number is enclosed in total scanning are as follows:
N=R/ Δ x
Wherein, N indicates that total scanning circle number, R indicate that the radius of the wafer to be detected, Δ x indicate time moving distance.
3. the scan method of ultrasonic scanning device according to claim 1, which is characterized in that described default by adjusting
Rotation speed keeps the sweep time of each pixel on the wafer to be detected identical.
4. the scan method of ultrasonic scanning device according to claim 3, which is characterized in that in the S4, obtain institute
The specific method for stating default rotation speed includes:
S4-1: the sweep time of setting single pixel point, and meanwhile it is big according to the radius of the circular scan path and the pixel
It is small, obtain the pixel quantity in the circular scan path；
S4-2: according to the sweep time of pixel quantity and single pixel point in the circular scan path, the circle is obtained
The total scanning time of shape scan path；
S4-3: it according to the radius of the circular scan path and the total scanning time, obtains and the circular scan path pair
The default rotation speed answered.
5. the scan method of ultrasonic scanning device according to claim 4, which is characterized in that in the S4-1, according to
The radius of the circular scan path and the pixel size, obtain the formula of the pixel quantity in the circular scan path
Are as follows:
Wherein, Mn indicates the pixel quantity in the circular scan path, and n indicates the mobile number of the ultrasonic probe,
Δ x indicates time moving distance, and D indicates pixel size.
6. the scan method of ultrasonic scanning device according to claim 4, which is characterized in that in the S4-2, according to
The sweep time of pixel quantity and single pixel point in the circular scan path, obtain the total of the circular scan path
The formula of sweep time are as follows:
T=Mn × Ts
Wherein, T indicates the total scanning time of the circular scan path, and Mn indicates the pixel number in the circular scan path
Amount, Ts indicate the sweep time of single pixel point.
7. the scan method of ultrasonic scanning device according to claim 4, which is characterized in that in the S4-3, according to
The radius of the circular scan path and the total scanning time obtain default rotation speed corresponding with the circular scan path
The formula of degree are as follows:
Wherein, v indicates default rotation speed, and n indicates that the mobile number of the ultrasonic probe, Δ x indicate time moving distance,
T indicates the total scanning time of the circular scan path.
8. a kind of ultrasonic scanning device, which is characterized in that the ultrasonic scanning device includes at least: chuck, ultrasonic wave are visited
Head, rotating mechanism, driving mechanism and scan data processing module, the chuck are set on the rotating mechanism, the ultrasound
The down-set top in the chuck of wave probe vertical, the driving mechanism and the scan data processing module with it is described
Ultrasonic probe connection；Wherein,
The driving mechanism using the center of circle for the wafer to be detected being placed on the chuck as initial point, with it is time mobile away from
From as each mobile spacing, the radius for controlling the ultrasonic probe along the wafer to be detected successively carries out from the inside to the outside
Position is mobile；
After the every position of completion of the ultrasonic probe is mobile, the rotating mechanism is controlled described to be checked by the chuck
It surveys wafer at the uniform velocity to rotate a circle by default rotation speed, so that the ultrasonic probe sweeps the circle on the wafer to be detected
It retouches path to be scanned, the circular scan path is using the mobile terminal in the secondary position to the distance of initial point as radius shape
At；Wherein, the default rotation speed is controlled by the rotating mechanism, sweeps the default rotation speed with corresponding circle
The increase for retouching the radius in path is gradually reduced；
The scan data processing module handles the scan data of acquisition, generates scan image.
9. ultrasonic scanning device according to claim 8, which is characterized in that the ultrasonic scanning device further include:
Vacuum adsorption mechanism, the vacuum adsorption mechanism include: vacuum suction chamber and getter device, wherein the vacuum suction chamber passes through
Lead to the upper and lower surfaces of the chuck, the getter device and the vacuum suction chamber to connect far from one end of the chuck upper surface
It is logical.
10. ultrasonic scanning device according to claim 8, which is characterized in that the ultrasonic scanning device further include:
Vacuum adsorption mechanism, the vacuum adsorption mechanism include: vacuum suction chamber, total adsorbent chamber and getter device, wherein the vacuum
Adsorbent chamber is set in the chuck and penetrates through with the upper surface of the chuck, and total adsorbent chamber is set to the vacuum suction chamber
It is penetrated through in the chuck of lower section and with the vacuum suction chamber, the getter device is connected to total adsorbent chamber.
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