CN109085237A - A kind of ultrasonic scanning device and scan method - Google Patents
A kind of ultrasonic scanning device and scan method Download PDFInfo
- Publication number
- CN109085237A CN109085237A CN201810634202.XA CN201810634202A CN109085237A CN 109085237 A CN109085237 A CN 109085237A CN 201810634202 A CN201810634202 A CN 201810634202A CN 109085237 A CN109085237 A CN 109085237A
- Authority
- CN
- China
- Prior art keywords
- scanning
- wafer
- ultrasonic
- circular
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000523 sample Substances 0.000 claims abstract description 82
- 230000033001 locomotion Effects 0.000 claims abstract description 35
- 238000001179 sorption measurement Methods 0.000 claims description 50
- 230000007246 mechanism Effects 0.000 claims description 43
- 238000012545 processing Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 8
- 238000002604 ultrasonography Methods 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000002699 waste material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/26—Arrangements for orientation or scanning by relative movement of the head and the sensor
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Acoustics & Sound (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The present invention provides a kind of ultrasonic scanning device and scan method, and scan method includes: with wafer radius to be measured for probe movement routine, and obtains time moving distance according to pixel size；Total scanning circle number is obtained according to wafer radius to be measured and time moving distance；It is mobile spacing as origin, with equal moving distance using the wafer center of circle to be measured, ultrasonic probe successively carries out position along probe movement routine from the inside to the outside and moves；After the every position of completion of ultrasonic probe is mobile, a circular scan path is formed as radius using the distance of the mobile terminal in the secondary position to initial point；Wafer to be checked at the uniform velocity rotates a circle by default rotation speed, to be scanned to circular scan path；Wherein, rotation speed is preset as the increase of the radius of corresponding circular scan path is gradually reduced；The scan data of acquisition is handled, scan image is generated.Solve the problems, such as that production capacity waste, low efficiency cause cost to increase when C_SAM board detection in the prior art through the invention.
Description
Technical Field
The invention relates to the field of semiconductor detection, in particular to an ultrasonic scanning device and a scanning method.
Background
An ultrasonic Microscope (SAT, also called C-SAM, C-mode Acoustic Microscope) is a machine for detecting the difference between the reflection rate and the energy of high-frequency ultrasonic waves and materials with different densities, and is widely used in the back-end process of semiconductors. The ultrasonic microscope outputs ultrasonic signals, which are partially reflected and transmitted when the signals meet the interfaces of different materials, the intensity of the transmitted echo is different due to the different material densities, and defects inside the semiconductor device are inspected based on the characteristics and are imaged according to the received signal changes.
In the field of semiconductor manufacturing, a C _ SAM machine is mainly used in the field of wafer manufacturing and packaging and is commonly used for nondestructive testing of defects (cracks, layering, cavities and the like) such as layering and cracks of electronic components, LEDs and metal substrates; and judging the acoustic impedance difference inside the material through image contrast, determining the shape and size of the defect, and determining the orientation of the defect. The ultrasonic microscope is applied to the detection of CIS-BSI (backside illuminated CMOS image sensor) products, is mainly applied to the bubble detection of bonding interfaces, and has high detection rate.
The C _ SAM machine needs to detect products with various shapes, so that a uniform square scanning area is adopted; as shown in fig. 1 and fig. 2, the diameter d of the wafer 1 'is used as the width and length of the scanning area 2', and when scanning is performed, the chuck holding the wafer 1 'is stationary, that is, the wafer 1' is stationary, and scanning according to the scanning path 3 'is realized by moving the probe above the wafer 1'; although the scanning method can cover the object to be detected, compared with the wafer 1', the method can lose the productivity of a part of blank areas and reduce the detection efficiency; for large scale semiconductor manufacturing, a small loss in capacity can also lead to a large increase in the cost of manpower and material resources.
Therefore, how to improve the efficiency of the C _ SAM tool detection and further reduce the production cost has become one of the problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an ultrasonic scanning apparatus and a scanning method, which are used to solve the problems of the prior art that the production capacity is wasted, the efficiency is low and the cost is increased when the C _ SAM machine performs the detection.
To achieve the above and other related objects, the present invention provides a scanning method of an ultrasonic scanning apparatus, the scanning method comprising:
s1: taking the radius of the wafer to be detected as a probe moving path of the ultrasonic probe, and simultaneously acquiring the uniform moving distance of the ultrasonic probe on the probe moving path according to the set pixel size;
s2: acquiring the total number of scanning turns of the ultrasonic probe according to the radius of the wafer to be detected and the uniform moving distance;
s3: taking the circle center of the wafer to be detected as an initial origin point, taking the uniform moving distance as the moving distance of each time, and sequentially moving the ultrasonic probe from inside to outside along the probe moving path until the moving times of the ultrasonic probe are the same as the total scanning turns;
s4: after the ultrasonic probe finishes position movement every time, taking the distance from the end point of the position movement to the initial origin as a radius, and forming a circular scanning path on the wafer to be detected; the wafer to be detected rotates for a circle at a constant speed according to a preset rotating speed so as to scan the circular scanning path through the ultrasonic probe; wherein the preset rotation speed gradually decreases with an increase in the radius of the corresponding circular scanning path;
s5: and processing the acquired scanning data to generate a scanning image.
Optionally, in S2, the distance of the uniform movement and the pixel size are equal, and the total number of scanning cycles is:
N＝R/Δx
wherein N represents the total number of scanning turns, R represents the radius of the wafer to be detected, and Δ x represents the average moving distance.
Optionally, the scanning time of each pixel point on the wafer to be detected is the same by adjusting the preset rotation speed.
Optionally, in S4, the specific method for obtaining the preset rotation speed includes:
s4-1: setting the scanning time of a single pixel point, and acquiring the number of the pixel points on the circular scanning path according to the radius of the circular scanning path and the size of the pixel;
s4-2: acquiring the total scanning time of the circular scanning path according to the number of the pixel points on the circular scanning path and the scanning time of a single pixel point;
s4-3: and acquiring a preset rotating speed corresponding to the circular scanning path according to the radius of the circular scanning path and the total scanning time.
Optionally, in S4-1, according to the radius of the circular scanning path and the size of the pixel, a formula for obtaining the number of pixels on the circular scanning path is as follows:
wherein Mn represents the number of pixel points on the circular scanning path, n represents the number of times of movement of the ultrasonic probe, Δ x represents the average movement distance, and D represents the pixel size.
Optionally, in S4-2, the formula for obtaining the total scanning time of the circular scanning path according to the number of the pixels on the circular scanning path and the scanning time of a single pixel is as follows:
T＝Mn×Ts
wherein T represents the total scanning time of the circular scanning path, Mn represents the number of pixel points on the circular scanning path, and Ts represents the scanning time of a single pixel point.
Optionally, in S4-3, the formula for obtaining the preset rotation speed corresponding to the circular scanning path according to the radius of the circular scanning path and the total scanning time is as follows:
where v denotes a preset rotation speed, n denotes the number of times of movement of the ultrasonic probe, Δ x denotes a mean movement distance, and T denotes a total scanning time of the circular scanning path.
The present invention also provides an ultrasonic scanning apparatus, comprising at least: the ultrasonic probe comprises a chuck, an ultrasonic probe, a rotating mechanism, a driving mechanism and a scanning data processing module, wherein the chuck is arranged on the rotating mechanism, the ultrasonic probe is vertically and downwards arranged above the chuck, and the driving mechanism and the scanning data processing module are both connected with the ultrasonic probe; wherein,
the driving mechanism takes the circle center of a wafer to be detected placed on the chuck as an initial origin, takes the uniform moving distance as the moving distance of each time, and controls the ultrasonic probe to sequentially move from inside to outside along the radius of the wafer to be detected;
after the ultrasonic probe finishes position movement every time, the rotating mechanism controls the wafer to be detected to rotate at a constant speed for a circle at a preset rotating speed through the chuck, so that the ultrasonic probe scans a circular scanning path on the wafer to be detected, and the circular scanning path is formed by taking the distance from the end point of the position movement to the initial origin as a radius; the rotating mechanism is used for controlling the preset rotating speed, so that the preset rotating speed is gradually reduced along with the increase of the radius of the corresponding circular scanning path;
and the scanning data processing module processes the acquired scanning data to generate a scanning image.
Optionally, the ultrasonic scanning apparatus further comprises: a vacuum adsorption mechanism, the vacuum adsorption mechanism comprising: the vacuum chuck comprises a vacuum adsorption cavity and an air suction device, wherein the vacuum adsorption cavity penetrates through the upper surface and the lower surface of the chuck, and the air suction device is communicated with one end, far away from the upper surface of the chuck, of the vacuum adsorption cavity.
Optionally, the ultrasonic scanning apparatus further comprises: a vacuum adsorption mechanism, the vacuum adsorption mechanism comprising: vacuum adsorption chamber, total adsorption chamber and getter device, wherein, vacuum adsorption chamber locates in the chuck, and with the upper surface of chuck link up, total adsorption chamber locates in the chuck of vacuum adsorption chamber below, and with vacuum adsorption chamber link up, getter device with total adsorption chamber intercommunication.
As described above, the ultrasonic scanning apparatus and the scanning method according to the present invention have the following advantageous effects: by the ultrasonic scanning device and the scanning method, the scanning area is consistent with the area covered by the external outline of the wafer to be detected, the scanning time of a single wafer is greatly reduced, and the improvement range of the productivity reaches 22% with lower cost; meanwhile, the service life of the driving mechanism is prolonged by reducing the high-frequency movement times of the driving mechanism; and the damage problem of the edge of the wafer to be detected caused by local stress in the rotating process is reduced by arranging the vacuum adsorption mechanism.
Drawings
Fig. 1 is a schematic diagram of a scanning area in the prior art.
Fig. 2 is a schematic diagram of a scanning path in the prior art.
Fig. 3a is a schematic structural diagram of an ultrasonic scanning device according to the present invention.
FIG. 3b shows a cross-sectional view of the ultrasonic scanning device of the present invention along the direction AA'.
FIG. 3c shows another cross-sectional view of the ultrasonic scanning apparatus of the present invention along the direction AA'.
Fig. 3d is a top view of the ultrasound scanning apparatus of the present invention, wherein the top view does not include the ultrasound probe.
Fig. 4 is a flowchart illustrating a scanning method of the ultrasonic scanning apparatus according to the present invention.
Fig. 5a is a state diagram of the ultrasonic scanning device of the present invention in an initial position.
Fig. 5b is a top view of the ultrasonic scanning device of the present invention in an initial position, wherein the top view does not include the ultrasonic probe.
Fig. 6a is a diagram illustrating the ultrasonic scanning device of the present invention moving from the initial position to the second position.
Figure 6b shows a top view of the ultrasound scanning device of the present invention moved from an initial position to a second position, wherein the top view does not include the ultrasound probe.
Fig. 7a is a diagram illustrating the ultrasonic scanning device of the present invention moving from the second position to the third position.
Fig. 7b is a top view of the ultrasonic scanning device of the present invention moving from the second position to the third position, wherein the top view does not include the ultrasonic probe.
FIG. 8a is a view showing the ultrasonic scanning apparatus of the present invention in a state of being moved from the (n-2) th position to the (n-1) th position.
FIG. 8b is a top view of the ultrasonic scanning device of the present invention moving from the (n-2) th position to the (n-1) th position, wherein the top view does not include the ultrasonic probe.
FIG. 9a is a view showing the ultrasonic scanning apparatus of the present invention moved from the (n-1) th position to the n-th position.
FIG. 9b is a top view of the ultrasonic scanning device of the present invention moving from the (n-1) th position to the n-th position, wherein the top view does not include the ultrasonic probe.
Description of the element reference numerals
1' chuck
2' scanning area
3' scan path
1 chuck
2 ultrasonic probe
3 rotating mechanism
4 wafer to be detected
5 vacuum adsorption mechanism
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 3a to fig. 9 b. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 3a to 3d, the present embodiment provides an ultrasonic scanning apparatus including at least: chuck 1, ultrasonic probe 2, rotary mechanism 3, actuating mechanism (not shown in the figure) and scanning data processing module (not shown in the figure), wherein, chuck 1 set up in 3 on the rotary mechanism, ultrasonic probe 2 set up perpendicularly downwards in the top of chuck 1, actuating mechanism with scanning data processing module all with ultrasonic probe 2 is connected.
As shown in fig. 3a to 3d, the chuck 1 is used for holding and fixing the wafer 4 to be detected. Preferably, in this embodiment, the chuck 1 clamps and fixes the wafer 4 to be detected in a vacuum adsorption manner, so as to avoid a problem that the edge of the wafer 4 to be detected is damaged due to local stress in a rotation process when the wafer 4 to be detected is clamped and fixed by pins.
As shown in fig. 3b, in an embodiment, the ultrasound scanning apparatus further includes: a vacuum adsorption mechanism 5, the vacuum adsorption mechanism 5 comprising: a vacuum adsorption cavity and a suction device (not shown in the figure), wherein the vacuum adsorption cavity penetrates through the upper surface and the lower surface of the chuck 1, and the suction device is communicated with one end of the vacuum adsorption cavity, which is far away from the upper surface of the chuck 1. And vacuumizing the vacuum adsorption cavity through the air suction device so as to clamp and fix the wafer 4 to be detected on the chuck 1 in a vacuum adsorption mode.
In another embodiment, as shown in fig. 3c, the vacuum adsorption mechanism 5 comprises: vacuum adsorption chamber, total adsorption chamber and getter device (not shown in the figure), wherein, vacuum adsorption chamber locates in chuck 1, and with the upper surface of chuck 1 link up, total adsorption chamber locates in the chuck 1 of vacuum adsorption chamber below, and with vacuum adsorption chamber link up, getter device with total adsorption chamber intercommunication. Preferably, the connection part of the total suction chamber and the suction device is located inside the rotating mechanism 3. The air suction device vacuumizes the vacuum adsorption cavity through the total adsorption cavity so as to clamp and fix the wafer 4 to be detected on the chuck 1 in a vacuum adsorption mode.
As shown in fig. 3a, the cross section of the ultrasonic probe 2 is circular; in practical applications, the cross section of the ultrasonic probe 2 can be set to any shape, and is not limited to this embodiment. The ultrasonic probe 2 transmits an ultrasonic signal to the wafer 4 to be detected, receives the ultrasonic signal fed back from the wafer 4 to be detected, obtains an internal image of the wafer 4 to be detected through the fed-back ultrasonic signal, and analyzes the quality of the wafer 4 to be detected according to the internal image. In the present embodiment, the ultrasonic probe 2 includes an electric energy to ultrasonic wave unit (not shown), a transmitting unit (not shown), a receiving unit (not shown) and an ultrasonic to electric energy unit (not shown). The electric energy-to-ultrasonic wave unit converts the electric signal into a corresponding ultrasonic signal; the transmitting unit is connected with the electric energy-to-ultrasonic wave unit and transmits an ultrasonic signal output by the electric energy-to-ultrasonic wave unit, the ultrasonic signal is vertically hit on the wafer 4 to be detected, the hitting depth is different according to the energy difference of the ultrasonic signal, and the setting can be carried out according to the requirement, which is not repeated; the receiving unit receives the ultrasonic signals fed back from the wafer 4 to be detected, and the ultrasonic signals fed back contain scanning data information; the ultrasonic-to-electric energy conversion unit is connected with the receiving unit and converts the ultrasonic signals received by the receiving unit into electric signals for subsequent system analysis.
The rotating mechanism 3 includes a rotating shaft connected to the chuck 1 and a rotating drive motor (not shown in the figure) connected to the rotating shaft; the rotating shaft is driven to rotate by the rotating driving motor so as to drive the chuck 1 to rotate, so that the wafer 4 to be detected is driven to rotate; meanwhile, the rotation speed of the rotating shaft can be adjusted by controlling the rotation driving motor, so that the preset rotation speed of the wafer 4 to be detected is adjusted. In this embodiment, specifically, after the ultrasonic probe 2 completes position movement every time, the rotating mechanism 3 controls the wafer 4 to be detected to rotate at a constant speed for one circle at a preset rotating speed v through the chuck 1, so that the ultrasonic probe 2 scans a circular scanning path on the wafer 4 to be detected, where the circular scanning path is formed by using a distance from an end point of the position movement to a starting origin as a radius; wherein, the preset rotation speed v is controlled by the rotating mechanism 3, and the preset rotation speed v is gradually reduced along with the increase of the radius of the corresponding circular scanning path, so as to ensure the fidelity of the scanning data. Preferably, the preset rotation speed v is controlled by the rotating mechanism 3, so that the preset rotation speed v is gradually reduced along with the increase of the radius of the corresponding circular scanning path, and the scanning time of the single pixel point on the wafer 4 to be detected is the same. It should be noted that the scanning time of the single pixel point may be selected according to the fidelity requirement of the actual scanned data, which is not described herein.
The driving mechanism (not shown in the figures) comprises a driving shaft and a driving motor, wherein the driving shaft is connected with the ultrasonic probe 2, the driving motor is connected with the driving shaft, and the driving motor drives the ultrasonic probe 2 to move in position through the driving shaft; specifically, the driving motor controls the ultrasonic probe 2 to sequentially move along the radius R of the wafer 4 to be detected from inside to outside through the driving shaft, wherein in the process of moving the position, the center of the circle of the wafer 4 to be detected placed on the chuck 1 is used as an initial origin O, and the uniform movement distance Δ x is used as the movement distance of each time. It should be noted that, by the design of the probe moving path in this embodiment, the number of high-frequency motions of the driving motor is greatly reduced, so as to prolong the service life of the driving motor.
The scan data processing module (not shown in the figure) is configured to process the acquired scan data to generate a scan image for subsequent analysis.
Example two
As shown in fig. 4, the present embodiment provides a scanning method of an ultrasonic scanning apparatus, the scanning method including:
s1: the radius R of the wafer to be detected is used as a probe moving path of the ultrasonic probe, and the uniform moving distance delta x of the ultrasonic probe on the probe moving path is obtained according to the set pixel size D.
Preferably, in the present embodiment, the average movement distance is equal to the pixel size; it should be noted that the pixel size D is determined by the performance parameters of the sensor in the ultrasound probe, and the pixel size D is determined as the ultrasound probe is determined.
S2: and acquiring the total number of scanning turns N of the ultrasonic probe according to the radius R of the wafer to be detected and the uniform movement distance delta x.
As an example, in S2, the average shift distance and the pixel size are equal, and the total number of scanning turns is:
N＝R/Δx
wherein N represents the total number of scanning turns, R represents the radius of the wafer to be detected, and Δ x represents the average moving distance.
S3: and taking the circle center O of the wafer to be detected as an initial origin, taking the uniform moving distance delta x as the moving distance of each time, and sequentially moving the ultrasonic probe along the probe moving path from inside to outside until the moving times of the ultrasonic probe are the same as the total scanning circle number N.
S4: after the ultrasonic probe finishes position movement every time, taking the distance from the end point of the position movement to the initial origin as a radius, and forming a circular scanning path on the wafer to be detected; the wafer to be detected rotates at a constant speed for a circle according to a preset rotating speed so as to scan the circular scanning path through the ultrasonic probe, so that the scanning area of the ultrasonic scanning device is consistent with the area covered by the external contour of the wafer to be detected (both circular areas); wherein the preset rotation speed is gradually reduced with the increase of the radius of the corresponding circular scanning path.
As an example, the preset rotation speed v is adjusted to make the scanning time of each pixel point on the wafer to be detected the same.
As an example, in S4, the specific method for acquiring the preset rotation speed v includes:
s4-1: setting the scanning time of a single pixel point, and acquiring the number of the pixel points on the circular scanning path according to the radius of the circular scanning path and the size of the pixel; it should be noted that the scanning time of each pixel point may be selected according to the fidelity requirement of the actual scanned data, which is not described herein.
Specifically, in S4-1, the formula for obtaining the number of pixels on the circular scanning path according to the radius of the circular scanning path and the size of the pixel is as follows:
wherein Mn represents the number of pixel points on the circular scanning path, n represents the number of times of movement of the ultrasonic probe, Δ x represents the average movement distance, and D represents the pixel size.
S4-2: and acquiring the total scanning time of the circular scanning path according to the number of the pixel points on the circular scanning path and the scanning time of a single pixel point.
Specifically, in S4-2, the formula for obtaining the total scanning time of the circular scanning path according to the number of the pixels on the circular scanning path and the scanning time of a single pixel is as follows:
T＝Mn×Ts
wherein T represents the total scanning time of the circular scanning path, Mn represents the number of pixel points on the circular scanning path, and Ts represents the scanning time of a single pixel point.
S4-3: and acquiring a preset rotating speed corresponding to the circular scanning path according to the radius of the circular scanning path and the total scanning time.
Specifically, in S4-3, the formula for obtaining the preset rotation speed corresponding to the circular scanning path according to the radius of the circular scanning path and the total scanning time is as follows:
where v denotes a preset rotation speed, n denotes the number of times of movement of the ultrasonic probe, Δ x denotes a mean movement distance, and T denotes a total scanning time of the circular scanning path.
S5: and processing the acquired scanning data to generate a scanning image.
The following description will be made in conjunction with the scanning method of the present embodiment to fully describe the advantages of the scanning method of the present embodiment compared with the existing scanning method.
Assume that a square scanning area in the conventional scanning method is divided into 6000 × 6000 pixels, the maximum speed of a single row of the ultrasonic probe is 1000mm/s, the radius of the whole wafer to be detected is 150mm, and the pixel size D is 50um, and the description will be given by taking the example that the scanning time of a single pixel in this embodiment is the same as the scanning time of a single pixel in the conventional method.
As shown in fig. 1 and 2, the time for scanning the whole wafer to be detected in the conventional scanning method isAverage scan time per line isThe scanning time to a single pixel point is
As shown in FIGS. 5a to 8b, the average movement distance Δ x is 50um, and the total number of scanning turnsAs shown in fig. 5a to 6b, when the ultrasonic probe moves from the position W1 to the position W2, the circular scanning path formed on the wafer to be detected is d1, and the radius of the circular scanning path is Δ x, so the scanning time is equal toAs shown in fig. 7a and 7b, when the ultrasonic probe moves from the position W2 to the position W3, the circular scanning path formed on the wafer to be detected is d2, and the radius of the circular scanning path is 2 Δ x, so the scanning time is equal toAs shown in FIGS. 8a and 8b, when the ultrasonic probe moves from Wn-2 to Wn-1, the circular scanning path formed on the wafer to be detected is dn-1, the radius of the circular scanning path is (n-1) Δ x, so the scanning time isAs shown in fig. 9a and 9b, when the ultrasonic probe moves from the position Wn-1 to the edge, the circular scanning path formed on the wafer to be detected is dn, and the radius of the circular scanning path is n Δ x equal to 150mm, so the scanning time is equal to 150mmSo that the total scanning time is
Therefore, when the whole wafer to be detected is scanned by the existing scanning method, the total scanning time is 1800 s; when the scanning method of the embodiment is used for scanning the whole wafer to be detected, the total scanning time is about 1413 s; therefore, compared with the conventional scanning method, the scanning method of the present embodiment saves about 22% of the throughput for only a single wafer to be detected, thereby greatly improving the scanning efficiency.
In summary, the ultrasonic scanning apparatus and the scanning method of the present invention have the following advantages: by the ultrasonic scanning device and the scanning method, the scanning area is consistent with the area covered by the external outline of the wafer to be detected, the scanning time of a single wafer is greatly reduced, and the improvement range of the productivity reaches 22% with lower cost; meanwhile, the service life of the driving mechanism is prolonged by reducing the high-frequency movement times of the driving mechanism; and the damage problem of the edge of the wafer to be detected caused by local stress in the rotating process is reduced by arranging the vacuum adsorption mechanism. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A scanning method of an ultrasonic scanning apparatus, the scanning method comprising:
s1: taking the radius of the wafer to be detected as a probe moving path of the ultrasonic probe, and simultaneously acquiring the uniform moving distance of the ultrasonic probe on the probe moving path according to the set pixel size;
s2: acquiring the total number of scanning turns of the ultrasonic probe according to the radius of the wafer to be detected and the uniform moving distance;
s3: taking the circle center of the wafer to be detected as an initial origin point, taking the uniform moving distance as the moving distance of each time, and sequentially moving the ultrasonic probe from inside to outside along the probe moving path until the moving times of the ultrasonic probe are the same as the total scanning turns;
s4: after the ultrasonic probe finishes position movement every time, taking the distance from the end point of the position movement to the initial origin as a radius, and forming a circular scanning path on the wafer to be detected; the wafer to be detected rotates for a circle at a constant speed according to a preset rotating speed so as to scan the circular scanning path through the ultrasonic probe; wherein the preset rotation speed gradually decreases with an increase in the radius of the corresponding circular scanning path;
s5: and processing the acquired scanning data to generate a scanning image.
2. The scanning method of an ultrasonic scanning device according to claim 1, wherein in S2, the average moving distance and the pixel size are equal, and the total number of scanning cycles is:
N＝R/Δx
wherein N represents the total number of scanning turns, R represents the radius of the wafer to be detected, and Δ x represents the average moving distance.
3. The scanning method of the ultrasonic scanning device according to claim 1, wherein the scanning time of each pixel point on the wafer to be detected is made the same by adjusting the preset rotation speed.
4. The scanning method of the ultrasonic scanning device according to claim 3, wherein in the step S4, the specific method for acquiring the preset rotation speed includes:
s4-1: setting the scanning time of a single pixel point, and acquiring the number of the pixel points on the circular scanning path according to the radius of the circular scanning path and the size of the pixel;
s4-2: acquiring the total scanning time of the circular scanning path according to the number of the pixel points on the circular scanning path and the scanning time of a single pixel point;
s4-3: and acquiring a preset rotating speed corresponding to the circular scanning path according to the radius of the circular scanning path and the total scanning time.
5. The scanning method of the ultrasonic scanning device according to claim 4, wherein in said S4-1, the formula for obtaining the number of pixel points on the circular scanning path according to the radius of the circular scanning path and the pixel size is as follows:
wherein Mn represents the number of pixel points on the circular scanning path, n represents the number of times of movement of the ultrasonic probe, Δ x represents the average movement distance, and D represents the pixel size.
6. The scanning method of the ultrasonic scanning device according to claim 4, wherein in the step S4-2, the formula for obtaining the total scanning time of the circular scanning path according to the number of the pixel points on the circular scanning path and the scanning time of the single pixel point is as follows:
T＝Mn×Ts
wherein T represents the total scanning time of the circular scanning path, Mn represents the number of pixel points on the circular scanning path, and Ts represents the scanning time of a single pixel point.
7. The scanning method of the ultrasonic scanning device according to claim 4, wherein in said S4-3, the formula for obtaining the preset rotation speed corresponding to the circular scanning path according to the radius of the circular scanning path and the total scanning time is as follows:
where v denotes a preset rotation speed, n denotes the number of times of movement of the ultrasonic probe, Δ x denotes a mean movement distance, and T denotes a total scanning time of the circular scanning path.
8. An ultrasound scanning device, characterized in that it comprises at least: the ultrasonic probe comprises a chuck, an ultrasonic probe, a rotating mechanism, a driving mechanism and a scanning data processing module, wherein the chuck is arranged on the rotating mechanism, the ultrasonic probe is vertically and downwards arranged above the chuck, and the driving mechanism and the scanning data processing module are both connected with the ultrasonic probe; wherein,
the driving mechanism takes the circle center of a wafer to be detected placed on the chuck as an initial origin, takes the uniform moving distance as the moving distance of each time, and controls the ultrasonic probe to sequentially move from inside to outside along the radius of the wafer to be detected;
after the ultrasonic probe finishes position movement every time, the rotating mechanism controls the wafer to be detected to rotate at a constant speed for a circle at a preset rotating speed through the chuck, so that the ultrasonic probe scans a circular scanning path on the wafer to be detected, and the circular scanning path is formed by taking the distance from the end point of the position movement to the initial origin as a radius; the rotating mechanism is used for controlling the preset rotating speed, so that the preset rotating speed is gradually reduced along with the increase of the radius of the corresponding circular scanning path;
and the scanning data processing module processes the acquired scanning data to generate a scanning image.
9. The ultrasonic scanning device of claim 8, further comprising: a vacuum adsorption mechanism, the vacuum adsorption mechanism comprising: the vacuum chuck comprises a vacuum adsorption cavity and an air suction device, wherein the vacuum adsorption cavity penetrates through the upper surface and the lower surface of the chuck, and the air suction device is communicated with one end, far away from the upper surface of the chuck, of the vacuum adsorption cavity.
10. The ultrasonic scanning device of claim 8, further comprising: a vacuum adsorption mechanism, the vacuum adsorption mechanism comprising: vacuum adsorption chamber, total adsorption chamber and getter device, wherein, vacuum adsorption chamber locates in the chuck, and with the upper surface of chuck link up, total adsorption chamber locates in the chuck of vacuum adsorption chamber below, and with vacuum adsorption chamber link up, getter device with total adsorption chamber intercommunication.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810634202.XA CN109085237A (en) | 2018-06-20 | 2018-06-20 | A kind of ultrasonic scanning device and scan method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810634202.XA CN109085237A (en) | 2018-06-20 | 2018-06-20 | A kind of ultrasonic scanning device and scan method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109085237A true CN109085237A (en) | 2018-12-25 |
Family
ID=64840045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810634202.XA Pending CN109085237A (en) | 2018-06-20 | 2018-06-20 | A kind of ultrasonic scanning device and scan method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109085237A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110243838A (en) * | 2019-07-11 | 2019-09-17 | 浙江省特种设备科学研究院 | A kind of ultrahigh pressure vessel detection device and its detection method |
| CN114878592A (en) * | 2022-05-27 | 2022-08-09 | 清华大学 | Detection method for wafer scratching scanning |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050257617A1 (en) * | 2004-05-24 | 2005-11-24 | Busch Ralph E | Method and apparatus for ultrasonic scanning of a fabrication wafer |
| CN102539532A (en) * | 2011-12-31 | 2012-07-04 | 中南大学 | Ultrasonic C scanning imaging method based on two-dimensional neighborhood synthetic aperture focusing |
| CN203542342U (en) * | 2013-11-14 | 2014-04-16 | 中芯国际集成电路制造(北京)有限公司 | Vacuum suction cup of wafer back face grinding device |
| CN104977306A (en) * | 2014-04-08 | 2015-10-14 | 上海微电子装备有限公司 | Surface defect detection system and surface defect detection method |
| CN106158678A (en) * | 2015-03-24 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | A kind of method detecting wafer bonding quality |
| CN107024541A (en) * | 2015-10-08 | 2017-08-08 | 株式会社日立电力解决方案 | Defect detecting method and its device |
| CN107421964A (en) * | 2017-08-31 | 2017-12-01 | 长江存储科技有限责任公司 | A kind of scanning system |
-
2018
- 2018-06-20 CN CN201810634202.XA patent/CN109085237A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050257617A1 (en) * | 2004-05-24 | 2005-11-24 | Busch Ralph E | Method and apparatus for ultrasonic scanning of a fabrication wafer |
| CN102539532A (en) * | 2011-12-31 | 2012-07-04 | 中南大学 | Ultrasonic C scanning imaging method based on two-dimensional neighborhood synthetic aperture focusing |
| CN203542342U (en) * | 2013-11-14 | 2014-04-16 | 中芯国际集成电路制造(北京)有限公司 | Vacuum suction cup of wafer back face grinding device |
| CN104977306A (en) * | 2014-04-08 | 2015-10-14 | 上海微电子装备有限公司 | Surface defect detection system and surface defect detection method |
| CN106158678A (en) * | 2015-03-24 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | A kind of method detecting wafer bonding quality |
| CN107024541A (en) * | 2015-10-08 | 2017-08-08 | 株式会社日立电力解决方案 | Defect detecting method and its device |
| CN107421964A (en) * | 2017-08-31 | 2017-12-01 | 长江存储科技有限责任公司 | A kind of scanning system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110243838A (en) * | 2019-07-11 | 2019-09-17 | 浙江省特种设备科学研究院 | A kind of ultrahigh pressure vessel detection device and its detection method |
| CN114878592A (en) * | 2022-05-27 | 2022-08-09 | 清华大学 | Detection method for wafer scratching scanning |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110333293B (en) | Method for exciting and detecting concrete defects by square grid phased ultrasonic array | |
| CN107817299A (en) | A kind of ring automatic ultrasonic phased array lossless detection method and device | |
| CN208239365U (en) | A kind of pipeline scanning equipment based on phased array dual probe | |
| US7526959B2 (en) | Method of inspecting a substrate using ultrasonic waves and apparatus for performing the same | |
| CN109085237A (en) | A kind of ultrasonic scanning device and scan method | |
| CN1014092B (en) | Procedure to measure the level of a liquid by means of elastic waves, and device to carry out such procedure | |
| CN107121499B (en) | Single-chip and phased array ultrasonic combined probe | |
| KR102631897B1 (en) | A defect device automatic inspection apparatus using an ultrasonic probe and an inspection method using the safe | |
| CN104267102A (en) | Method for detecting welding seam of friction stir welding through ultrasonic phased array | |
| US7661315B2 (en) | Method and apparatus for ultrasonic scanning of a fabrication wafer | |
| CN110608872A (en) | Optical detection equipment and detection method | |
| CN113994204B (en) | Ultrasonic flaw detection method, ultrasonic flaw detection device, and steel manufacturing method | |
| US9625572B2 (en) | Method and apparatus for signal path equalization in a scanning acoustic microscope | |
| CN109817541A (en) | Scan method, control device, detection unit and production system | |
| CN216285081U (en) | Ultrasonic automatic detection equipment | |
| CN113138231B (en) | Ultrasonic phased array detection device and method for aero-engine case ring forging | |
| CN109374741A (en) | Hollow cylinder test specimen axial flaw Ultrasonic C-Scan detection method | |
| JP2008003014A (en) | Ultrasonic inspection method and device | |
| CN209745888U (en) | chain ring phased array device of detecting a flaw's check-up test block | |
| JP2003324141A (en) | Wafer holding device | |
| CN104914161A (en) | Method for detecting inner wall cracks of tube seat hole of header adapter tube based on phased array technology | |
| CN206710389U (en) | A kind of axle class component electron beam weld reflectoscope | |
| CN109065483A (en) | Detect board and detection method | |
| CN114137088B (en) | Ultrasonic water spraying penetration automatic profiling detection system for curved bus revolution body composite material | |
| CN211478172U (en) | Phased array ultrasonic detection system for detecting defects of carbon fiber cylindrical structural part |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181225 |