CN109073979A - 纳米压印用复制模、其制造方法及纳米压印用复制模制造装置 - Google Patents
纳米压印用复制模、其制造方法及纳米压印用复制模制造装置 Download PDFInfo
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Abstract
本发明提供一种纳米压印用复制模、其制造方法及纳米压印用复制模制造装置。本发明的纳米压印用复制模的特征在于,包括:基底,其由塑料膜形成;转印部,其形成于所述基底;以及导膜,其能够分离地形成于基底,且形成有中孔以使所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物,所述转印部由树脂形成,且形成有凹凸状的图案。
Description
技术领域
本发明涉及一种纳米压印用复制模、其制造方法及纳米压印用复制模制造装置。
背景技术
纳米压印工艺作为一种替代露光(expose)和显影(develop)光刻胶(photoresist)来在基板(substrate)上部形成图案(pattern)的光刻工艺(photolithography process)的技术,是一种将形成有图案的冲压模具转印(stamping)至基板上部的树脂来在基板上部形成图案的工艺。
此时,使用于纳米压印工艺的冲压模具的图案通过转印至复制模的图案来而形成。
通常,如图1所图示,冲压模具2通过贴附了形成有图案PT的复制模1的卷对卷(roll to roll)装备的卷5时,复制模1的图案PT被转印至冲压模具2来在冲压模具2上形成图案PT,如图2所图示,图案PT通过依次被转印至复制模1、冲压模具2及基板3而形成。
然而,以往的复制模1由镍(Ni)、铜(Cu)等金属材质形成,因而存在图案的精度低、制造工艺复杂、制造单价高的问题。
上述作为背景技术说明的事项仅用于增进对本发明的背景的理解,不能被理解为相当于已为本领域的一般的技术人员所知的现有技术。
发明内容
技术问题
本发明的目的在于,提供一种由树脂形成,因而图案精度高、制造工艺简单、制造单价低的纳米压印用复制模、其制造方法及纳米压印用复制模制造装置。
技术方案
用于达成这种目的的本发明的纳米压印用复制模的特征在于,包括:基底,其由塑料膜形成;转印部,其形成于所述基底;以及导膜,其能够分离地形成于基底,且形成有中孔以使所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物,所述转印部由树脂形成,且形成有凹凸状的图案。
用于达成这种目的的本发明的纳米压印用复制模的特征在于,包括:基底,其由塑料膜形成;转印部,其形成于所述基底;以及导膜,其能够分离地形成于基底,且形成有中孔以使所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物,所述转印部通过向形成于所述导膜的中孔填充树脂而形成。
在所述基底的一面可以形成有具有弹性的垫层。
用于达成这种目的的本发明的纳米压印用复制模制造装置包括:填充部,其通过在导膜的中孔中填充树脂来形成转印部,所述导膜能够分离地形成于基底,且形成有中孔以使形成于所述基底的所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物;加压部,其在一侧贴附有母模,通过上下升降所述母模来将所述母模的图案转印至所述转印部;以及照射部,其向所述加压部方向照射光。
用于达成这种目的的本发明的纳米压印用复制模制造方法包括:填充步骤,即向导膜的中孔中填充树脂来形成转印部,所述导膜能够分离地形成于基底,且形成有中孔以使形成于所述基底的所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物;图案形成步骤,即将母模移动至所述转印部,并通过对所述母模加压来形成图案;固化步骤,即通过向所述转印部照射光来固化所述转印部;以及去除步骤,即去除所述导膜。
发明的效果
根据本发明,能够实现如下多种效果。
第一,具有改善图案的精度的优点。
第二,具有制造工艺简单的优点。
第三,具有制造单价较低的优点。
附图说明
图1是卷对卷装备的构成图。
图2是形成复制模、冲压模具、基板的图案的顺序图。
图3是本发明的纳米压印用复制模的结构图。
图4是对本发明的纳米压印用复制模的另一实施例的结构图。
图5是对本发明的纳米压印用复制模的异物的去除的结构图。
图6是示出对本发明的纳米压印用复制模的异物的去除的平面图的图。
具体实施方式
本发明的目的、特定优点及新特征将在下面结合附图所描述的详细说明和实施例中变得更容易理解。值得注意的是,在本说明书中对各图的构成要素标记参考编号时,就相同的构成要素而言,即使在不同的图中标示,也尽量使其具有相同的编号。此外,尽管第一、第二等术语可以用于说明多种构成要素,但所述构成要素不限于所述术语。所述术语仅用作区分一个构成要素与另一个构成要素的目的。此外,在说明本发明的过程中,当判断对相关公知技术的具体说明反而多余地使本发明的主旨不清楚时,省略其详细说明。
如图3所示,本发明的纳米压印用复制模包括:基底10;以及转印部20:其形成于基底10。
基底10发挥支撑转印部20的功能,可以由基板(substrate)、膜(film)等形成,而膜(film)中又尤其可以使用塑料膜,本发明人将作为塑料膜的一种的PET膜(Polyethylenephthalate film)用作基底10。
转印部20由树脂(resin)形成,为了后续工艺,优选由通过紫外线(ultraviolet,UV),电子束(electron beam,EB)等光(light)固化的光固化树脂(light curable resin)形成。
转印部20可以形成为圆形,通过由母模转印(stamping),在转印部20上形成与形成于母模的图案(pattern)对应的图案。亦即,通过转印(stamping)形成于母模的一面的凹凸状的图案在转印部20上形成与上述母模的图案对应的凹凸状的图案,换言之,在复制模上形成与母模的图案相反的图案。
例如,当形成于母模的凹状图案被转印至复制模时,在复制模的转印部20上形成与凹状图案相反的凸状图案;形成于复制模的转印部20上的凸状图案被转印至冲压模具,在冲压模具上形成凹状图案;形成于冲压模具的凹状图案被转印至基板,在基板上形成凸状图案。
复制模的图案被转印至冲压模具,而冲压模具的图案被转印至基板,因而形成于复制模的图案与形成于基板的图案相同,而与形成于冲压模具的图案相反。
一方面,母模可以是硅片(Si wafer)、石英(quartz)等。
如此,复制模由树脂形成,而非由镍、铜等金属形成,因而具有改善图案精度的优点。
此外,传统的复制模通过对镍、铜等金属实施电镀的方式制造,而本发明的复制模则通过转印形成,因而具有简化制造工艺、改善生产速度、降低制造单价的优点。
如图4至图6所示,本发明的纳米压印用复制模包括:基底10、转印部20、导膜30、垫层40。
将母模转印至复制模时,复制模的转印部20的外周面有可能会被晕开而形成异物P。亦即,与转印前的转印部20的外周面相比,转印后的转印部20的外周面被扩散而晕开,晕开部分固化后形成异物P。
形成异物P的复制模被转印至冲压模具所存在的问题是,冲压模具的图案受损而发生缺陷。
因此,为防止冲压模具的图案受损,防止形成或去除复制模的转印部20的异物P是极为重要的因素。
为去除形成于转印部20的异物P,本发明引入了导膜30。亦即,通过使形成有与转印部20对应的中孔的导膜30位于基底10,防止转印部20的外周面上形成异物P。
下面对导膜30进行详细说明。
如图5和图6所示,导膜30形成有对应于转印部20的形状的中孔。当转印部20为圆形时,导膜30的中孔也同样形成为圆形以与之对应。
因此,转印部20通过中孔向外部露出,当将母模转印至复制模时,异物P形成于导膜30上,而不是形成于转印部20的外周面。
之后,去除导膜30即可轻松地一并去除形成于导膜30的异物P。
如此,通过利用导膜30去除异物P,可以防止将复制模转印至冲压模具时转印部20上形成异物P,从而可以防止冲压模具图案受损,进而防止发生缺陷。
一方面,为了将复制模转印至冲压模具,使复制模附着于卷对卷装备的卷或压合装备的基板,而如果复制模所附着的卷或基板的面不均匀或存在异物等,由树脂材质形成的转印部20会通过厚度薄的基底10受到影响,因而存在转印至冲压模具时图案受损而引发缺陷的问题。
本发明中,通过在基底10上形成垫层40防止转印时复制模的转印部20受影响。亦即,通过在与形成有转印部20的基底10的一面相反的另一面形成具有弹性的垫层40解决了上述问题。
优选垫层40形成为比基底10薄、比导膜30厚,垫层40的一面可以附着有未形成中孔的导膜。
此外,垫层40可以是硅(Si),且可以涂覆于基底10而形成。
根据本发明的纳米压印用复制模,即使复制模所附着的卷或基板的面不均匀或存在异物等,由于具有弹性的垫层40予以缓和传自卷或基板的不均匀的压力,因而可以防止不均匀的压力通过基底10传达至转印部20而影响转印部20。
下面对本发明的纳米压印用复制模制造装置进行说明。
本发明的纳米压印用复制模制造装置包括:填充部、加压部、照射部。
填充部在基底10中填充转印部20,若基底10上存在形成有中孔的导膜30,则在导膜30的中孔中填充转印部20。
这种填充部可通过旋涂(spin coating)方式填充转印部20,其可以包括:涂覆转印部20的喷嘴和旋转转印部20的电机。
加压部包括可上下工作的缸体(cylinder)、直线电机(linear motor)等,且其一面附着有母模。母模与加压部连动升降,因而母模的图案被转印至转印部20,从而形成图案。
照射部向加压部方向照射紫外线、电子束等光。亦即,通过向位于加压部的转印部20照射紫外线、电子束等光而固化转印部20。
下面简单说明通过上述纳米压印用复制模制造装置制造复制模的过程。
本发明的纳米压印用复制模制造方法包括:在形成于导膜30的中孔中填充转印部20的填充步骤;通过向转印部20加压母模而形成图案的图案形成步骤;通过向转印部20照射紫外线、电子束等光而固化转印部的固化步骤;以及去除导膜30的去除步骤。
填充步骤包括:在导膜30上涂覆转印部20的涂覆步骤;旋转转印部20的旋转步骤;以及干燥转印部20的烘干步骤。
一方面,固化步骤可以始于图案形成步骤中向转印部20加压母模之前、加压母模的过程中、或加压母模之后中的任一时间点。
尽管上面通过具体实施例详细说明了本发明,但仅仅是为具体说明本发明而进行的描述,并不限于本发明所涉及的说明,显然,本领域的技术人员可以在本发明的技术思想范围内对其实施变型或改良。
本发明的单纯变型及变更均属于本发明的领域,因而本发明的具体保护范围将由所附权利要求书明确界定。
符号说明
10:基底,20:转印部,30:导膜,40:垫层。
Claims (5)
1.一种纳米压印用复制模,其特征在于,包括:
基底,其由塑料膜形成;
转印部,其形成于所述基底;以及
导膜,其能够分离地形成于基底,且形成有中孔以使所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物,
所述转印部由树脂形成,且形成有凹凸状的图案。
2.一种纳米压印用复制模,其特征在于,包括:
基底,其由塑料膜形成;
转印部,其形成于所述基底;以及
导膜,其能够分离地形成于基底,且形成有中孔以使所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物,
所述转印部通过向形成于所述导膜的中孔填充树脂而形成。
3.根据权利要求1或2所述的纳米压印用复制模,其特征在于,
在所述基底的一面形成有具有弹性的垫层。
4.一种纳米压印用复制模制造装置,其特征在于,包括:
填充部,其通过在导膜的中孔中填充树脂来形成转印部,所述导膜能够分离地形成于基底,且形成有中孔以使形成于所述基底的所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物;
加压部,其在一侧贴附有母模,通过上下升降所述母模来将所述母模的图案转印至所述转印部;以及
照射部,其向所述加压部方向照射光。
5.一种纳米压印用复制模的制造方法,其特征在于,包括:
填充步骤,即向导膜的中孔中填充树脂来形成转印部,所述导膜能够分离地形成于基底,且形成有中孔以使形成于所述基底的所述转印部能够露出,且形成所述转印部的外周面晕开并固化而形成的异物;
图案形成步骤,即将母模移动至所述转印部,并通过对所述母模加压来形成图案;
固化步骤,即通过向所述转印部照射光来固化所述转印部;以及
去除步骤,即去除所述导膜。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1120391A (ja) * | 1997-06-30 | 1999-01-26 | Hitachi Chem Co Ltd | 転写フィルムおよびそれを用いたカラ−フィルタの製造方法 |
JP2003156614A (ja) * | 2001-11-21 | 2003-05-30 | Ntt Advanced Technology Corp | パタン形成方法、光学部品、及び、光学部品の製作方法 |
JP2007326296A (ja) * | 2006-06-08 | 2007-12-20 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2008100376A (ja) * | 2006-10-17 | 2008-05-01 | Dainippon Printing Co Ltd | インプリント用モールド |
JP2010000719A (ja) * | 2008-06-20 | 2010-01-07 | Mitsubishi Rayon Co Ltd | フィルム状レプリカモールド、その製造方法および微細凹凸構造を有するフィルム製品の製造方法 |
CN102036797A (zh) * | 2008-05-23 | 2011-04-27 | 昭和电工株式会社 | 树脂制模制作用叠层体和叠层体、树脂制模和磁记录介质的制造方法 |
JP2015050217A (ja) * | 2013-08-30 | 2015-03-16 | 大日本印刷株式会社 | インプリント方法およびインプリント装置 |
KR20150048549A (ko) * | 2013-10-28 | 2015-05-07 | 엘지디스플레이 주식회사 | 클램프 및 이를 포함하는 유기전계발광표시장치의 제조장치 |
KR20150079055A (ko) * | 2013-12-31 | 2015-07-08 | 주식회사 효성 | 사이드필름이 적용된 디스플레이용 광학필름 및 이의 제조방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04216914A (ja) * | 1990-12-18 | 1992-08-07 | Canon Inc | レプリカおよびスタンパの製造方法 |
JP5325458B2 (ja) * | 2008-05-23 | 2013-10-23 | 昭和電工株式会社 | 磁気記録媒体の製造方法 |
JP5558327B2 (ja) * | 2010-12-10 | 2014-07-23 | 株式会社東芝 | パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法 |
EP2979845A1 (en) * | 2012-05-08 | 2016-02-03 | Asahi Kasei E-materials Corporation | Transfer method and thermal nanoimprinting apparatus |
JP6010481B2 (ja) * | 2013-02-27 | 2016-10-19 | 旭化成株式会社 | フィルム状モールドの製造方法 |
WO2015064685A1 (ja) * | 2013-11-01 | 2015-05-07 | Jx日鉱日石エネルギー株式会社 | 帯状のフィルム基材上に不連続なパターンを有する塗膜を形成するための塗布装置、及び凹凸パターンを有する帯状のフィルム部材の製造方法 |
JP6317247B2 (ja) * | 2014-12-22 | 2018-04-25 | 富士フイルム株式会社 | インプリント用モールド |
-
2016
- 2016-07-08 KR KR1020160086614A patent/KR101816838B1/ko active IP Right Grant
-
2017
- 2017-07-06 TW TW106122628A patent/TWI693141B/zh active
- 2017-07-07 JP JP2018562675A patent/JP2019519108A/ja active Pending
- 2017-07-07 CN CN201780029355.5A patent/CN109073979A/zh not_active Withdrawn
- 2017-07-07 WO PCT/KR2017/007306 patent/WO2018009026A1/ko active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1120391A (ja) * | 1997-06-30 | 1999-01-26 | Hitachi Chem Co Ltd | 転写フィルムおよびそれを用いたカラ−フィルタの製造方法 |
JP2003156614A (ja) * | 2001-11-21 | 2003-05-30 | Ntt Advanced Technology Corp | パタン形成方法、光学部品、及び、光学部品の製作方法 |
JP2007326296A (ja) * | 2006-06-08 | 2007-12-20 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2008100376A (ja) * | 2006-10-17 | 2008-05-01 | Dainippon Printing Co Ltd | インプリント用モールド |
CN102036797A (zh) * | 2008-05-23 | 2011-04-27 | 昭和电工株式会社 | 树脂制模制作用叠层体和叠层体、树脂制模和磁记录介质的制造方法 |
JP2010000719A (ja) * | 2008-06-20 | 2010-01-07 | Mitsubishi Rayon Co Ltd | フィルム状レプリカモールド、その製造方法および微細凹凸構造を有するフィルム製品の製造方法 |
JP2015050217A (ja) * | 2013-08-30 | 2015-03-16 | 大日本印刷株式会社 | インプリント方法およびインプリント装置 |
KR20150048549A (ko) * | 2013-10-28 | 2015-05-07 | 엘지디스플레이 주식회사 | 클램프 및 이를 포함하는 유기전계발광표시장치의 제조장치 |
KR20150079055A (ko) * | 2013-12-31 | 2015-07-08 | 주식회사 효성 | 사이드필름이 적용된 디스플레이용 광학필름 및 이의 제조방법 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111208708A (zh) * | 2018-11-21 | 2020-05-29 | 吉佳蓝科技股份有限公司 | 压印光刻用复制模制作装置及其制作方法 |
CN111208708B (zh) * | 2018-11-21 | 2021-05-28 | 吉佳蓝科技股份有限公司 | 压印光刻用复制模制作装置及其制作方法 |
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