CN109065757B - Substrate for OLED lighting device and lighting device - Google Patents

Substrate for OLED lighting device and lighting device Download PDF

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Publication number
CN109065757B
CN109065757B CN201810890541.4A CN201810890541A CN109065757B CN 109065757 B CN109065757 B CN 109065757B CN 201810890541 A CN201810890541 A CN 201810890541A CN 109065757 B CN109065757 B CN 109065757B
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substrate
transparent
layer
lighting device
conductive
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CN109065757A (en
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侯丽新
王亚丽
王佳
李丽
程媛
刘贤豪
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CHINA LUCKY Group Corp.
Shanghai Lekai New Material Technology Co.,Ltd.
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China Lucky Group Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Abstract

The present invention provides a substrate for an OLED lighting device and an OLED lighting device, the substrate including: a transparent substrate; a planarization layer disposed on one surface of the transparent substrate; a conductive mesh embedded in the planarization layer; and the transparent electrode is arranged on the surface of the planarization layer far away from the transparent substrate and is in contact with the conductive grid. The conductive grids arranged on the substrate can reduce the sheet resistance of the transparent electrode, effectively reduce the voltage drop on the transparent electrode far away from the current injection end, further effectively improve the uniformity of the OLED lighting device and improve the luminous efficiency of the OLED lighting device. In addition, the conductive grid divides the OLED lighting device adopting the substrate into a plurality of independent individuals from a whole, and when screen burning short circuit occurs in local defects, the luminous performance of other places cannot be influenced, so that the service life of the OLED lighting device can be obviously prolonged. The transparent barrier layer is further arranged and the refractive index of each layer structure is adjusted, so that the water and oxygen barrier performance can be improved, the light extraction efficiency can be improved, the luminous efficiency can be improved, and the service life can be prolonged.

Description

Substrate for OLED lighting device and lighting device
Technical Field
The invention relates to the technical field of organic photoelectric devices, in particular to a substrate for an OLED (organic light emitting diode) lighting device and the lighting device.
Background
The OLED technology has the advantages of self-luminescence, lightness, thinness, flexibility, surface luminescence, low power consumption, no thermal radiation, energy conservation, environmental protection and the like, and is an advanced novel display and illumination technology. Compared with OLED display, OLED lighting does not need a TFT backboard, the structure and the process are relatively simple, the OLED lighting is a fourth generation lighting revolution technology after incandescent lamps, fluorescent lamps and LEDs, and the OLED lighting has the characteristics of large-area surface light source, natural light-like, flexible design, no ultraviolet radiation, health and safety and the like.
The OLED lighting device is generally formed by sequentially forming a light emitting layer and a metal electrode on a substrate (including a transparent substrate and a transparent electrode formed on the transparent substrate), and with the development of the OLED lighting technology, the flexible OLED lighting device has a huge application value potential because of its unique advantages of being light, thin, bendable, designable in shape, cuttable in size, and the like, so that how to prepare the flexible OLED lighting device with high light emitting efficiency and long service life, which can meet the commercial requirements, attracts more and more people's extensive attention. The transparent substrate in the flexible OLED lighting device is a flexible transparent substrate (such as PET, PEN, PI, etc.), which has the following problems: (1) the water and oxygen barrier property is low, and the flexible substrate made of the flexible transparent base material has poor water and oxygen barrier property, so that the service life of the flexible OLED lighting device is short, and the practical requirement cannot be met; (2) the OLED illuminating device is low in light extraction efficiency, and the refractive index of the transparent electrode of the OLED illuminating device is larger than that of the flexible transparent substrate, so that part of light emitted by the OLED illuminating device is totally reflected when the light is incident to the surface of the flexible transparent substrate from the transparent electrode, heat is lost in the OLED illuminating device, the light cannot be extracted from the OLED illuminating device, and the light emitting efficiency and the service life of the OLED illuminating device are reduced; (3) the voltage of the OLED lighting device is high, and since the sheet resistance of a common transparent electrode (such as ITO) is higher than 50 omega/□, when voltage is applied to the electrode of the OLED lighting device, and current flows into the transparent electrode, the voltage is continuously shunted and reduced, so that the voltage on the OLED lighting device far away from a current injection end is lower, the brightness is lower, and the uniformity of the whole OLED lighting device is difficult to ensure.
Thus, the related art of the current OLED lighting device still needs to be improved.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a substrate for an OLED lighting device having a small voltage drop, good uniformity, high light extraction efficiency, long lifetime, or good water and oxygen barrier properties.
In one aspect of the invention, the invention provides a substrate for an OLED lighting device. According to an embodiment of the invention, the substrate comprises: a transparent substrate; a planarization layer disposed on one surface of the transparent substrate; a conductive mesh embedded in the planarization layer;
a transparent electrode disposed on a surface of the planarization layer away from the transparent substrate and in contact with the conductive mesh. The square resistance of the transparent electrode can be greatly reduced by arranging the conductive grid on the substrate, so that the voltage drop on the transparent electrode far away from the current injection end is effectively reduced, the uniformity of the OLED lighting device is effectively improved, the luminous efficiency of the OLED lighting device is improved, in addition, due to the existence of the conductive grid, the OLED lighting device adopting the substrate is divided into a plurality of independent individuals by a whole body, the luminous performance of other places cannot be influenced by the screen-burning short circuit when a local defect occurs, and the service life of the OLED lighting device can be obviously prolonged.
According to an embodiment of the present invention, the refractive index of the planarization layer is equal to or less than the refractive index of the transparent substrate.
According to an embodiment of the invention, the transparent substrate is a flexible transparent substrate, and the substrate further comprises a transparent barrier layer disposed between the transparent substrate and the planarization layer.
According to an embodiment of the present invention, the refractive index of the transparent barrier layer is equal to or less than the refractive index of the transparent substrate.
According to the embodiment of the invention, the refractive index of the planarization layer is less than or equal to that of the transparent barrier layer, and the refractive index of the transparent barrier layer is less than or equal to that of the transparent substrate.
According to the embodiment of the invention, the transparent barrier layer comprises n pairs of inorganic layers and organic layers which are alternately stacked in sequence, wherein n is more than or equal to 1 and less than or equal to 16.
According to some embodiments of the present invention, the inorganic layer has a thickness of 5 to 200nm, according to other embodiments of the present invention, the inorganic layer has a thickness of 10 to 150nm, according to still other embodiments of the present invention, the inorganic layer has a thickness of 15 to 100 nm; according to some embodiments of the invention the organic layer has a thickness of 0.05 to 10 microns, according to other embodiments of the invention the organic layer has a thickness of 0.1 to 8 microns, according to still other embodiments of the invention the organic layer has a thickness of 0.15 to 5 microns.
According to an embodiment of the present invention, a material forming the inorganic layer is selected from at least one of silicon oxide and aluminum oxide; the material forming the organic layer is selected from at least one of polyurethane, polyester, and acrylic.
According to an embodiment of the invention, the conductive mesh has an open porosity of 85% or more.
According to the embodiment of the invention, the height of the conducting wires in the conducting grid is 20-150 nanometers.
According to the embodiment of the invention, the height of the transparent electrode is 20-400 nanometers.
According to the embodiment of the invention, the sheet resistance of the transparent electrode is 5-100 omega/□, preferably 5-20 omega/□.
According to an embodiment of the invention, the substrate satisfies one of the following conditions: water vapor transmission rate of 10 or less-5g/m224 h; oxygen transmission rate of 10 or less-5cc/m224 h.atm; the light transmittance is 80% or more, preferably 85% or more.
According to an embodiment of the present invention, a material forming the transparent substrate is selected from at least one of polyethylene naphthalate, polyethersulfone, polysulfone, polyimide, and polyethylene terephthalate; the material forming the planarization layer is selected from silicon aerogel; the material forming the conductive grid is selected from metals, preferably at least one of silver and copper; the material forming the transparent electrode is selected from at least one of transparent conductive oxide, conductive polymer and graphene, preferably, the transparent conductive oxide is selected from at least one of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide and IGO, and the conductive polymer is selected from at least one of polythiophene, polyaniline and polyacetylene.
In another aspect of the invention, the invention provides an OLED lighting device. According to an embodiment of the invention, the OLED lighting device comprises the substrate described above. The OLED lighting device has all the features and advantages of the substrate described above, and will not be described in detail herein.
Drawings
Fig. 1 is a schematic structural diagram of a substrate according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a substrate according to another embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a substrate according to yet another embodiment of the invention.
Fig. 4 is a schematic structural diagram of a substrate according to still another embodiment of the invention.
Detailed Description
The following describes embodiments of the present invention in detail. The following examples are illustrative only and are not to be construed as limiting the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
In one aspect of the invention, the invention provides a substrate for an OLED lighting device. According to an embodiment of the present invention, referring to fig. 1, the substrate includes: a transparent substrate 1; a planarization layer 4 disposed on one surface of the transparent substrate 1; a conductive grid 3 embedded in said planarization layer 4; and the transparent electrode 5 is arranged on the surface of the planarization layer 4 far away from the transparent substrate 1 and is in contact with the conductive grid 3. Through setting up the square resistance that electrically conductive net 3 can greatly reduced transparent electrode 5 on this base plate, thereby effectively reduce the voltage drop on the transparent electrode 5 of keeping away from the current injection end, and then effectively improve OLED lighting device's homogeneity, and the luminous efficacy is improved, in addition, because the existence of electrically conductive net, OLED lighting device that will adopt this base plate is cut apart into a plurality of independent individuals by a whole, it can not influence the luminous performance in other places yet to burn the screen short circuit when having a defect to appear in part like this, so can show extension OLED lighting device's life-span.
According to the embodiments of the present invention, the specific material of the transparent substrate 1 is not particularly limited, and may be flexibly selected by those skilled in the art according to the needs, and in some embodiments of the present invention, the specific material of the transparent substrate 1 includes, but is not limited to, glass, flexible transparent polymer film (including, but not limited to, polyethylene naphthalate (PEN), Polyethersulfone (PES), Polysulfone (PSF), Polyimide (PI), or polyethylene terephthalate (PET)), and the like. In some embodiments of the invention, the material forming the flexible transparent substrate is polyethylene terephthalate. Therefore, the material has wide sources, lower cost, high light transmittance and better service performance.
According to the embodiment of the invention, the thickness of the transparent substrate can be 25-200 μm. In the thickness range, the transparent substrate has the best mechanical strength and transmittance, and is beneficial to the preparation of parts such as the conductive grid, the planarization layer, the transparent electrode and the like; if too thick, the transmittance is relatively low, and the flexibility of the flexible transparent substrate is relatively deteriorated.
In some embodiments of the present invention, by disposing the conductive mesh in contact with the transparent electrode, the sheet resistance of the transparent electrode can be significantly reduced, thereby reducing the voltage drop and improving the light emitting efficiency and light emitting uniformity. In some embodiments of the present invention, the conductive mesh may be disposed on the surface of the transparent substrate (see fig. 1) or may not be in contact with the surface of the transparent substrate (see fig. 2), as long as the surface of the conductive mesh away from the transparent substrate is not covered by the planarization layer, so that the conductive mesh can be ensured to be in effective contact with the transparent electrode, and the sheet resistance of the transparent electrode can be reduced.
In some embodiments of the present invention, the height H1 of the conductive wires in the conductive grid may be 20-150 nm, and within this height range, the resistance of the transparent electrode may be effectively reduced without significantly increasing the thickness of the substrate, which is in line with the trend of light and thin development.
In some embodiments of the present invention, the conductive mesh has an aperture ratio of 85% or more so as not to adversely affect the light extraction efficiency of an OLED lighting device employing the substrate. Therefore, negative influence on the light extraction efficiency of the OLED lighting device can not be generated, and a good lighting effect is ensured.
According to an embodiment of the present invention, a material forming the conductive mesh is not particularly limited as long as the sheet resistance of the transparent electrode can be reduced, and for example, includes, but is not limited to, at least one of metal, transparent conductive oxide (such as at least one of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, and indium oxide-doped gallium oxide), conductive polymer (such as at least one of polythiophene, polyaniline, and polyacetylene), and graphene.
According to embodiments of the present invention, in order to further reduce the sheet resistance of the transparent electrode, in some embodiments of the present invention, the material forming the conductive mesh is a metal, such as at least one of copper, silver, aluminum, gold, and alloys thereof. Therefore, the OLED illuminating device has the advantages of good conductivity, low sheet resistance and smaller voltage drop, and the luminous efficiency and the luminous uniformity of the OLED illuminating device adopting the substrate are obviously improved.
The specific method of forming the conductive mesh according to the embodiment of the present invention is not particularly limited, and those skilled in the art can flexibly select the method according to actual needs. In some embodiments of the present invention, the specific method for forming the conductive mesh may be any one of magnetron sputtering, etching, silver salt, mesh grid weaving, inkjet printing, and slot coating. Therefore, the method is simple to operate, mature in process, low in cost and suitable for large-scale production.
According to an embodiment of the present invention, in order to maintain a flat surface before forming the transparent electrode, and facilitate the preparation of the transparent electrode, a planarization layer is provided in the present invention, and the conductive mesh is embedded in the planarization layer, the material forming the planarization layer may be silicon aerogel, and the method of forming the planarization layer includes, but is not limited to, any one of slot coating, spin coating, doctor blade coating, solution method, inkjet printing, or spray coating. Therefore, the method is simple and convenient to operate, mature in process and easy for industrial production.
According to the embodiment of the invention, in order to improve the light extraction efficiency of the OLED lighting device adopting the substrate, the refractive index of the planarization layer can be adjusted, and particularly, the material of the planarization layer is selected so that the refractive index of the planarization layer is smaller than or equal to that of the transparent substrate, so that the light of the light emitting layer is not totally reflected when being emitted to the transparent substrate from the planarization layer, and the internal light extraction efficiency of the OLED lighting device adopting the substrate is obviously improved.
According to the embodiment of the present invention, the sequence of forming the conductive mesh and the planarization layer is not particularly limited, and those skilled in the art can flexibly select the conductive mesh and the planarization layer according to the actual situation and the device requirement. In some embodiments of the present invention, the conductive mesh may be formed on the surface of the transparent substrate first, and then the planarization layer may be formed in the mesh of the conductive mesh; in other embodiments of the present invention, a planarization layer may be formed on the surface of the transparent substrate, then grid-shaped grooves may be formed on the surface of the planarization layer, and the conductive grid may be formed in the grid-shaped grooves.
According to embodiments of the present invention, a specific material forming the transparent electrode is not particularly limited as long as the light emitting layer can be efficiently excited to emit light after being energized, and in some embodiments of the present invention, the material forming the transparent electrode is selected from at least one of a transparent conductive oxide, specifically at least one of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, and IGO, and a conductive polymer, specifically at least one of polythiophene, polyaniline, and polyacetylene. Therefore, the OLED illuminating device has good conductivity and low sheet resistance, and the luminous efficiency and the luminous uniformity of the OLED illuminating device adopting the substrate are good.
The method of forming the transparent electrode according to the embodiment of the present invention is also not particularly limited, and those skilled in the art can flexibly select it as desired. In some embodiments of the present invention, the preparation method of the transparent electrode formed by the transparent conductive oxide may be any one of a magnetron sputtering method, an ion sputtering method, a resistive evaporation method, and an atomic layer deposition method; the preparation method of the transparent electrode formed by the conductive polymer can be any one of a spin coating method, a micro-gravure coating method, a screen printing method, an ink-jet printing method and a scraper coating method; the method for preparing the transparent electrode formed by the graphene is any one of an epitaxial growth method, a chemical vapor CVD method, a graphite oxide reduction method, and a coating method. Therefore, the operation is simple and convenient, the process is mature, the cost is lower, and the prepared transparent electrode has better service performance.
According to the embodiment of the invention, the height H2 of the transparent electrode can be 20-400 nanometers. Within the height range, better conductive performance can be ensured, the square resistance is smaller, and the service performance of the OLED lighting device adopting the substrate can be effectively ensured. In some embodiments of the present invention, the sheet resistance of the transparent electrode may be 5 to 100 Ω/□, and in other embodiments, the sheet resistance of the transparent electrode may be 5 to 20 Ω/□. Therefore, the voltage drop of the substrate is small, and the luminous efficiency and the luminous uniformity of the OLED lighting device adopting the substrate are obviously improved.
According to an embodiment of the present invention, when the transparent substrate is a flexible transparent substrate, the water and oxygen barrier property is relatively poor for a glass transparent material, and therefore, according to an embodiment of the present invention, referring to fig. 3, the substrate further includes a transparent barrier layer 2 disposed between the transparent substrate 1 and the planarization layer 4. Therefore, the water and oxygen barrier property of the OLED lighting device adopting the substrate can be obviously improved, and the service life of the OLED lighting device is prolonged. According to some embodiments of the present invention, in order to further improve the water and oxygen barrier property, referring to FIG. 4, the transparent barrier layer 2 includes n pairs of inorganic layers 21 and organic layers 22 alternately stacked in sequence, wherein 1. ltoreq. n.ltoreq.16. Therefore, the water vapor transmission rate and the oxygen transmission rate are very low (for example, the water vapor transmission rate is less than or equal to 10) by adopting an organic-inorganic alternately mixed multilayer structure-5g/m224h, oxygen transmission rate of 10 or less-5cc/m224h atm), the lifetime of the OLED lighting device can be significantly improved. It should be noted that fig. 3 is only for illustrating the structures of the inorganic layer and the organic layer, and the case of having four pairs of the inorganic layer and the organic layer is illustrated, but the present application is not limited thereto.
According to the embodiment of the invention, for the inorganic layer, the gas and water vapor barrier is realized by mainly forming a dense metal or metal compound particle stacking structure and reducing the particle gap. In some embodiments of the present invention, the material forming the inorganic layer that may be employed may be selected from silicon oxide, aluminum oxide, or mixtures thereof. Therefore, the light-emitting diode has a better water-oxygen blocking layer, the refractive index is smaller than the direct refractive index of the transparent substrate, and the light extraction efficiency can be effectively improved. According to the embodiments of the present invention, the method for forming the inorganic layer may be any one selected from a magnetron sputtering method, an ion sputtering method, a resistive evaporation method, a Plasma Enhanced Chemical Vapor Deposition (PECVD), an Electron Beam Physical Vapor Deposition (EBPVD), and an Atomic Layer Deposition (ALD), and in some embodiments, the method for forming the inorganic layer may be PECVD, and the deposition process has a low basic temperature, a fast rate, a good film forming quality, fewer pinholes, and is not easy to crack. According to embodiments of the present invention, the thickness of the inorganic layer may be 5 to 200nm, in some embodiments, the thickness of the inorganic layer may be 10 to 150nm, and in other embodiments, the thickness of the inorganic layer may be 15 to 100 nm. Within the thickness range, the barrier property is optimal, if the inorganic layer is too thin, the compactness of the film is not enough, and pinhole defects exist, so that the barrier property is not high; if the inorganic layer is too thick, the film may be bent to cause cracks, and the barrier property may be significantly reduced.
According to the embodiment of the invention, the organic layer is coated on the surface of the inorganic layer, so that defects such as pinholes and cracks of the inorganic layer can be smoothly filled, and a dense structure is formed. Since the inorganic layer inevitably has defects such as pinholes, cracks, protrusions and the like in the manufacturing process, so that gas can directly pass through the inorganic layer through capillary flow, and the barrier property is rapidly reduced, the organic layer coated on the surface of the transparent inorganic layer can remarkably improve the barrier property of the substrate. According to an embodiment of the present invention, a material forming the organic layer may be any one of polyurethane, polyester, or acrylic. Therefore, the defects of pinholes, cracks and the like of the inorganic layer can be effectively filled, the water and oxygen barrier property of the substrate can be greatly improved by matching with the inorganic layer, the refractive index of the material is smaller than that of the transparent substrate, and the light extraction efficiency and the luminous efficiency of the OLED lighting device adopting the substrate can be obviously improved. According to embodiments of the present invention, the organic layer is formed by any one of a doctor blade method, a screen printing method, a spraying method, and a micro-gravure coating method, and in some embodiments, the coating thickness may be 0.05 to 10 μm, in other embodiments, the coating thickness may be 0.1 to 8 μm, and in still other embodiments, the coating thickness may be 0.15 to 5 μm. Thus, the performance of the organic layer is optimized, and if the organic layer is too thin, the defective portion of the inorganic barrier layer may not be completely covered; if the organic layer is too thick, the solar transmittance is relatively lowered.
According to the embodiment of the present invention, the substrate may have a water-oxygen barrier property, and the refractive index of each layer of the transparent group may be equal to or less than the refractive index of the transparent base material in order to further improve the light extraction efficiency. Therefore, when light emitted by the light emitting layer of the OLED lighting device adopting the substrate is absorbed into the transparent base material by each layer of the transparent group, the total reflection phenomenon cannot occur, and the light extraction rate is obviously improved. In some embodiments of the present invention, the refractive index of the transparent barrier layer is equal to or less than the refractive index of the transparent substrate, and the refractive index of the planarization layer is less than the refractive index of the transparent substrate. Therefore, the condition of total reflection does not exist in the transmission path of the luminous layer, almost all light rays can be emitted, and the light extraction efficiency is greatly improved.
According to an embodiment of the present invention, the substrate of the present invention satisfies one of the following conditions: water vapor transmission rate of 10 or less-5g/m224 h; oxygen transmission rate of 10 or less-5cc/m224 h.atm; the light transmittance is 80% or more, preferably 85% or more. Therefore, the OLED lighting device adopting the substrate has the advantages of good water and oxygen barrier property, long service life, reduced voltage, good light emitting uniformity, high light emitting efficiency, high light extraction rate and good lighting effect.
In another aspect of the invention, the invention provides an OLED lighting device. According to an embodiment of the invention, the OLED lighting device comprises the substrate described above. The OLED lighting device has all the features and advantages of the substrate described above, and will not be described in detail herein.
According to an embodiment of the present invention, the OLED lighting device may further include a light emitting layer and a metal electrode sequentially stacked on a surface of the transparent electrode remote from the transparent substrate, in addition to the aforementioned substrate. In some embodiments of the present invention, a transport layer or the like may also be provided between the transparent electrode and the light-emitting layer.
The following describes embodiments of the present invention in detail.
Example 1
Preparation of a transparent barrier layer:
selecting a 125-micron-thickness PET substrate, firstly preparing a 30-nm-thickness silicon oxide inorganic layer on the surface of the PET substrate by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, then coating a polyurethane resin binder on the surface of the PET substrate, drying to prepare an organic layer with the thickness of 5.1 microns, and then alternately preparing 3 pairs of silicon oxide layers and polyurethane resin layers according to the conditions to prepare the transparent barrier layer.
Preparation of conductive grid/planarization layer:
and coating a layer of nano silver wire solution on the surface of the transparent barrier layer, and heating and drying to form a silver wire conductive grid with the thickness of 150 nm. And then coating a layer of silica aerogel on the surface of the silver wire grid conductive layer, and drying to form a planarization layer with the thickness of 140 nm.
Preparation of a transparent electrode:
and manufacturing an Indium Tin Oxide (ITO) transparent conductive layer with the thickness of 150nm on the surface of the conductive grid/planarization layer.
The substrate obtained as described above had a water vapor transmission rate of 5.3 × 10-6g/m224h, oxygen transmission rate of 9.2 × 10- 6cc/m224h atm, square resistance 11.8. omega./□, and light transmittance 88.1%.
The substrate prepared by the method is used for assembling a flexible OLED lighting device, and the structure of the device is packaged: substrate/MoO of this example3N/P/T PTA bis (1-phenylisoquinoline-C2, N) iridium (III) acetylacetonate/TPBi/LiF/Al/UV gel/high barrier film (water vapor transmission rate of 4.7 × 10)-6g/m224h, oxygen transmission rate of 8.5 × 10-6cc/m2·24h·atm)。
Example 2
Preparation of a transparent barrier layer:
selecting a 125-micron-thickness PET substrate, firstly preparing a 20-nm-thickness silicon nitride inorganic layer on the surface of the PET substrate by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, then coating a polyester resin binder on the surface of the PET substrate, drying to prepare an organic layer with the thickness of 0.1 micron, and then alternately preparing 4 pairs of silicon nitride layers and polyester resin layers according to the conditions to prepare the transparent barrier layer.
Preparation of conductive grid/planarization layer:
and depositing a silver wire metal grid conducting layer with the thickness of 100nm on the surface of the transparent barrier layer by adopting a vacuum evaporation method. And then coating a layer of silicon aerogel on the surface of the silver wire metal grid conducting layer, and drying to form a flattening layer with the thickness of 85 nm.
Preparation of a transparent electrode:
and (3) manufacturing an Aluminum Zinc Oxide (AZO) transparent conductive layer with the thickness of 60nm on the surface of the conductive grid/planarization layer by adopting a magnetron sputtering method.
The substrate obtained as described above had a water vapor transmission rate of 2.7 × 10-6g/m224h, oxygen transmission rate of 5.6 × 10- 6cc/m224h atm, square resistance 8.3. omega./□, and light transmittance 88.5%.
The substrate prepared in the above manner is used for assembling a flexible OLED lighting device, and the structure and the high-barrier film of the packaging device are the same as those of embodiment 1.
Example 3
Preparation of a transparent barrier layer:
selecting a PET (polyethylene terephthalate) base material with the thickness of 100 micrometers, firstly preparing an alumina inorganic layer with the thickness of 5nm on the surface of the PET base material by adopting an atomic layer deposition method (ALD), then coating a polyacrylic resin adhesive on the surface of the PET base material, drying to prepare an organic layer with the thickness of 10 micrometers, and then alternately preparing 4 pairs of alumina layers and polyacrylic resin layers according to the conditions to prepare the transparent barrier layer.
Preparation of conductive grid/planarization layer:
and coating a layer of nano silver wire solution on the surface of the transparent barrier layer, and heating and drying to form a silver wire grid conducting layer with the thickness of 150 nm. And then coating a layer of silica aerogel on the surface of the silver wire grid conductive layer, and drying to form a planarization layer with the thickness of 140 nm.
Preparation of a transparent electrode:
and (3) manufacturing an Aluminum Zinc Oxide (AZO) transparent conductive layer with the thickness of 60nm on the surface of the conductive grid/planarization layer by adopting a magnetron sputtering method.
The substrate obtained as described above had a water vapor transmission rate of 2.3 × 10-6g/m224h, oxygen transmission rate of 4.7 × 10- 6cc/m224h atm, square resistance 10.7. omega./□, and light transmittance 88.7%.
The substrate prepared in the above manner is used for assembling a flexible OLED lighting device, and the structure and the high-barrier film of the packaging device are the same as those of embodiment 1.
Example 4
Preparation of a transparent barrier layer:
selecting a 125-micron-thickness PET substrate, firstly preparing a 50-nm-thickness silicon nitride inorganic layer on the surface of the PET substrate by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, then coating a polyester resin binder on the surface of the PET substrate, drying to prepare an organic layer with the thickness of 0.5 micron, and then alternately preparing 3 pairs of silicon nitride layers and polyester resin layers according to the conditions to prepare the transparent barrier layer.
Preparation of conductive grid/planarization layer:
and depositing a silver wire metal grid conducting layer with the thickness of 90nm on the surface of the transparent barrier layer by adopting a magnetron sputtering method. And then coating a layer of silicon aerogel on the surface of the silver wire metal grid conducting layer, and drying to form a flattening layer with the thickness of 75 nm.
Preparation of a transparent electrode:
and (3) manufacturing an aluminum-doped zinc oxide (AZO) transparent conductive layer with the thickness of 60nm on the surface of the conductive grid/planarization layer by adopting a magnetron sputtering method.
The substrate obtained as described above had a water vapor transmission rate of 5.8 × 10-6g/m224h, oxygen transmission rate of 7.2 × 10- 6cc/m224h atm, square resistance 8.5. omega./□, and light transmittance 87.9%.
The substrate prepared in the above manner is used for assembling a flexible OLED lighting device, and the structure and the high-barrier film of the packaging device are the same as those of embodiment 1.
Example 5
Preparation of a transparent barrier layer:
selecting a PET (polyethylene terephthalate) base material with the thickness of 100 micrometers, firstly preparing an alumina inorganic layer with the thickness of 15nm on the surface of the PET base material by adopting an atomic layer deposition method (ALD), then coating a polyacrylic resin adhesive on the surface of the PET base material, drying to prepare an organic layer with the thickness of 0.05 micrometers, and then alternately preparing 3 pairs of alumina layers and polyacrylic resin layers according to the conditions to prepare the transparent barrier layer.
Preparation of conductive grid/planarization layer:
and coating a layer of nano silver wire solution on the surface of the transparent barrier layer, and heating and drying to form a silver wire grid conducting layer with the thickness of 120 nm. And then coating a layer of silica aerogel on the surface of the silver wire grid conductive layer, and drying to form a planarization layer with the thickness of 90 nm.
Preparation of a transparent electrode:
and coating a transparent conductive layer of PEDOT (PSS) conductive polymer with the thickness of 50nm on the surface of the conductive grid/planarization layer.
The substrate obtained as described above had a water vapor transmission rate of 6.7 × 10-6g/m224h, oxygen transmission rate of 8.1 × 10- 6cc/m224h atm, square resistance 12.7. omega./□, and light transmittance 87.7%.
The substrate prepared in the above manner is used for assembling a flexible OLED lighting device, and the structure and the high-barrier film of the packaging device are the same as those of embodiment 1.
Comparative example 1
Preparation of a transparent electrode:
a PET substrate with the thickness of 125 mu m is selected, and an Indium Tin Oxide (ITO) transparent conductive layer with the thickness of 150nm is manufactured on the surface of the PET substrate.
The substrate obtained as described above had a water vapor transmission rate of 12.3g/m224h, oxygen transmission rate of 34cc/m224h atm, square resistance 75.6. omega./□, and light transmittance 88.3%.
The substrate prepared in the above manner is used for assembling a flexible OLED lighting device, and the structure and the high-barrier film of the packaging device are the same as those of embodiment 1.
Water vapor transmission, oxygen transmission, sheet resistance and transmission performance indices of the flexible films prepared in examples 1-5 and comparative example 1, and assemblyFlexible OLED lighting device, see table 1. Wherein the flexible OLED lighting device has an effective area of 0.3cm by 0.3cm, light emission efficiency, light emission uniformity and T70The adopted test standard of the service life is CSA015-2012 organic light emitting diode lighting test method; the testing instrument is a PR-655 spectral brightness meter and a Keithly model 2400 digital source meter; the luminous efficiency is 1000cd/m2The power efficiency and the luminous uniformity are obtained by taking the average value of the luminous brightness by adopting a five-point test method, and the calculation formula is (maximum brightness-minimum brightness)/2 × brightness average value, T70The lifetime is the time required for the OLED lighting device to continue to light up to a brightness decay to 70% of the initial brightness at 25 ℃ and 45% RH.
Table 1: data sheet for each example and comparative example
Figure BDA0001756834380000111
As seen from the data in table 1, the substrates prepared in examples 1, 2, 3, 4 and 5 have significantly excellent water-blocking, oxygen-blocking and electrical conductivity properties, compared with the substrate prepared in comparative example 1, the light emitting efficiency of the assembled flexible OLED lighting device is improved by more than 60%, the light emitting uniformity is improved by more than 70%, and the light emitting life is prolonged by more than 1000 times.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (18)

1. A substrate for an OLED lighting device comprising:
a transparent substrate;
a planarization layer disposed on one surface of the transparent substrate;
a conductive mesh embedded in the planarization layer;
the transparent electrode is arranged on the surface, away from the transparent substrate, of the planarization layer and is in contact with the conductive grid, and the square resistance of the transparent electrode is 5-100 omega/□;
wherein the refractive index of the planarization layer is equal to or less than the refractive index of the transparent substrate.
2. The substrate of claim 1, wherein the transparent substrate is a flexible transparent substrate, and further comprising a transparent barrier layer disposed between the transparent substrate and the planarization layer.
3. The substrate of claim 2, wherein the refractive index of the transparent barrier layer is equal to or less than the refractive index of the transparent substrate.
4. The substrate according to claim 3, wherein the refractive index of the planarization layer is equal to or less than the refractive index of the transparent barrier layer, and the refractive index of the transparent barrier layer is equal to or less than the refractive index of the transparent substrate.
5. The substrate according to claim 2, wherein the transparent barrier layer comprises n pairs of inorganic layers and organic layers alternately stacked in this order, wherein n is 1. ltoreq. n.ltoreq.16.
6. The substrate according to claim 5, wherein the inorganic layer has a thickness of 5 to 200 nm;
the thickness of the organic layer is 0.05-10 microns.
7. The substrate according to claim 6, wherein the inorganic layer has a thickness of 10 to 150 nm;
the thickness of the organic layer is 0.1-8 microns.
8. The substrate according to claim 6, wherein the inorganic layer has a thickness of 15 to 100 nm;
the thickness of the organic layer is 0.15-5 microns.
9. The substrate according to claim 5, wherein a material forming the inorganic layer is selected from at least one of silicon oxide and aluminum oxide;
the material forming the organic layer is selected from at least one of polyurethane, polyester, and acrylic.
10. The substrate of claim 1, wherein the conductive mesh has an open cell content of 85% or greater.
11. The substrate of claim 1, wherein the conductive wires in the conductive mesh have a height of 20-150 nm.
12. The substrate according to claim 1, wherein the height of the transparent electrode is 20 to 400 nm.
13. The substrate according to claim 1, wherein the transparent electrode has a sheet resistance of 5 to 20 Ω/□.
14. The substrate according to claim 1, wherein one of the following conditions is satisfied:
water vapor transmission rate of 10 or less-5g/m2·24h；
Oxygen transmission rate of 10 or less-5cc/m2·24h·atm；
The light transmittance is more than or equal to 80 percent.
15. The substrate of claim 14, wherein the light transmittance is 85% or greater.
16. The substrate according to claim 1, wherein the transparent base material is formed of a material selected from at least one of polyethylene naphthalate, polyethersulfone, polysulfone, polyimide, and polyethylene terephthalate;
the material forming the planarization layer is selected from silicon aerogel;
the material forming the conductive grid is selected from metals;
the material forming the transparent electrode is selected from at least one of transparent conductive oxide, conductive polymer and graphene.
17. The substrate of claim 16, wherein the conductive mesh is formed of at least one of silver and copper;
the transparent conductive oxide is selected from at least one of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide and indium oxide-doped gallium oxide, and the conductive polymer is selected from at least one of polythiophene, polyaniline and polyacetylene.
18. An OLED lighting device comprising the substrate of any one of claims 1-17.
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