CN109065757A - Substrate and illuminating device for OLED illuminating device - Google Patents
Substrate and illuminating device for OLED illuminating device Download PDFInfo
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- CN109065757A CN109065757A CN201810890541.4A CN201810890541A CN109065757A CN 109065757 A CN109065757 A CN 109065757A CN 201810890541 A CN201810890541 A CN 201810890541A CN 109065757 A CN109065757 A CN 109065757A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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Abstract
The present invention provides the substrates and OLED illuminating device for OLED illuminating device, which includes: transparent substrate；Planarization layer on one surface of transparent substrate is set；It is embedded the conductive grid in planarization layer；Planarization layer is set far from the transparent electrode being in contact on the surface of transparent substrate and with conductive grid.Conductive grid is arranged on the substrate can reduce the sheet resistance of transparent electrode, effectively reduce the voltage drop in the transparent electrode far from electric current injection end, and then be effectively improved the uniformity of OLED illuminating device, improve its luminous efficiency.In addition, conductive grid will be divided into multiple independent individuals by an entirety using the OLED illuminating device of the substrate, the luminescent properties in other places will not be influenced when burn-in short circuit occurs in local defect, can significantly extend its service life.Further transparent barrier layer is set and adjusts the refractive index of each layer structure, water and oxygen barrier property can be improved and improve light extraction efficiency, improves luminous efficiency and service life.
Description
Technical field
The present invention relates to organic electro-optic device technical fields, and in particular to substrate and luminaire for OLED illuminating device
Part.
Background technique
OLED technology have self-luminous, it is frivolous, can flexible, face shine, low-power consumption, non-thermal radiation, the advantages such as energy conservation and environmental protection,
It is the advanced novel display of one kind and lighting engineering.OLED illuminates opposite OLED and shows that structure and technique are opposite without TFT backplate
Simply, be after incandescent lamp, fluorescent lamp, LED forth generation illumination revolution technology, have large area area source, class natural light,
Can flexible design, without the characteristics such as ultraviolet radioactive, healthy and safe.
OLED illuminating device is usually in substrate (including the transparent electrode of transparent substrate and formation over the transparent substrate)
It sequentially forms luminescent layer and metal electrode forms, with the development of OLED lighting engineering, flexible OLED illuminating device is frivolous because of its
Particular advantages, the application values such as flexible, shape can design, size can be cut have a high potential, so how to prepare high-incidence light efficiency
Rate, long-life, the flexible OLED illuminating device that can meet commercialization demand increasingly attract the extensive concern of people.It is flexible
Transparent substrate in OLED illuminating device is flexible and transparent substrate (such as PET, PEN, PI), and there are the following problems for it: (1)
Water oxygen barrier property is low, poor with the flexible base board water oxygen barrier property that flexible and transparent substrate makes, and leads to the flexible OLED illuminating device longevity
It orders short, practical requirement is not achieved；(2) light extraction efficiency is low in OLED illuminating device, due to OLED illuminating device transparent electrode
Refractive index is greater than flexible and transparent substrate, and the part light for causing OLED illuminating device to issue is being incident on flexible and transparent by transparent electrode
It is totally reflected when substrate surface, generates heat, light can not be come out from internal extraction in internal losses, thereby reduce OLED illumination
The luminous efficiency of device and service life；(3) voltage drop of OLED illuminating device is high, since common transparent electrode (such as ITO) sheet resistance is higher than
50 Ω/, after OLED illuminating device electrode applies voltage, during electric current flows into inside transparent electrode, voltage meeting
Constantly shunting reduces, and causes on the OLED illuminating device far from electric current injection end that voltage is lower, and brightness is also relatively low, it is difficult to guarantee
The uniformity of entire OLED illuminating device.
Thus, current OLED illuminating device the relevant technologies still have much room for improvement.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention
One purpose is to propose that a kind of voltage drop is smaller, uniformity is good, light extraction efficiency is high, long service life or water oxygen good barrier property
Substrate for OLED illuminating device.
In one aspect of the invention, the present invention provides a kind of substrates for OLED illuminating device.According to the present invention
Embodiment, which includes: transparent substrate；A table of the transparent substrate is arranged in planarization layer, the planarization layer
On face；Conductive grid, the conductive grid are embedded in the planarization layer；
Transparent electrode, the transparent electrode are arranged on surface of the planarization layer far from the transparent substrate, and with
The conductive grid is in contact.The sheet resistance of transparent electrode can be substantially reduced by the way that conductive grid is arranged on the substrate, to have
Effect reduces the voltage drop in the transparent electrode far from electric current injection end, and then is effectively improved the uniformity of OLED illuminating device, mentions
Its high luminous efficiency, in addition, will be divided using the OLED illuminating device of the substrate by an entirety due to the presence of conductive grid
At multiple independent individuals, the photism in other places will not be influenced when part has a defect burn-in short circuit occur in this way
Can, so can significantly extend the service life of OLED illuminating device.
According to an embodiment of the invention, the refractive index of the planarization layer is less than or equal to the refractive index of the transparent substrate.
According to an embodiment of the invention, the transparent substrate is flexible and transparent substrate, and the substrate further includes that setting exists
Transparent barrier layer between the transparent substrate and the planarization layer.
According to an embodiment of the invention, the refractive index of the transparent barrier layer is less than or equal to the refraction of the transparent substrate
Rate.
According to an embodiment of the invention, the refractive index of the planarization layer is less than or equal to the refraction of the transparent barrier layer
Rate, and the refractive index of the transparent barrier layer is less than or equal to the refractive index of the transparent substrate.
According to an embodiment of the invention, the transparent barrier layer includes n to the successively inorganic layer of alternately laminated setting and has
Machine layer, wherein 1≤n≤16.
According to some embodiments of the present invention, the inorganic layer with a thickness of 5~200 nanometers, it is according to the present invention another
A little embodiments, the inorganic layer with a thickness of 10~150 nanometers, other embodiment according to the present invention, the inorganic layer
With a thickness of 15~100 nanometers；According to some embodiments of the present invention, the organic layer with a thickness of 0.05~10 micron, according to
Other embodiments of the invention, the organic layer with a thickness of 0.1~8 micron, other embodiment according to the present invention, institute
State organic layer with a thickness of 0.15~5 micron.
According to an embodiment of the invention, forming at least one of the material of the inorganic layer in silica and aluminium oxide
Kind；The material for forming the organic layer is selected from least one of polyurethane, polyester and acrylic resin.
According to an embodiment of the invention, the percent opening of the conductive grid is more than or equal to 85%.
According to an embodiment of the invention, the height of the conducting wire in the conductive grid is 20~150 nanometers.
According to an embodiment of the invention, the height of the transparent electrode is 20~400 nanometers.
According to an embodiment of the invention, the square resistance of the transparent electrode be 5~100 Ω/, preferably 5~20 Ω/
□。
According to an embodiment of the invention, the substrate meets one of the following conditions: moisture-vapor transmission is less than or equal to 10-5g/
m2·24h；OTR oxygen transmission rate is less than or equal to 10-5cc/m2·24h·atm；Light transmittance is more than or equal to 80%, preferably greater than or equal to
85%.
According to an embodiment of the invention, the material for forming the transparent substrate is selected from polyethylene naphthalate, polyethers
At least one of sulfone, polysulfones, polyimides and polyethylene terephthalate；The material for forming the planarization layer is selected from
Silica aerogel；The material for forming the conductive grid is selected from metal, preferably at least one of silver and copper；It is formed described transparent
The material of electrode is selected from least one of transparent conductive oxide, conducting polymer and graphene, it is preferred that described transparent to lead
At least one of electroxidation object selective oxidation indium tin, aluminium-doped zinc oxide, Fluorin doped tin-oxide and IGO, it is described conductive poly-
It closes object and is selected from least one of polythiophene, polyaniline and polyacetylene.
In another aspect of this invention, the present invention provides a kind of OLED illuminating devices.According to an embodiment of the invention, should
OLED illuminating device includes mentioned-above substrate.The OLED illuminating device has all features of mentioned-above substrate and excellent
Point, this is no longer going to repeat them.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the substrate of one embodiment of the invention.
Fig. 2 is the structural schematic diagram of the substrate of another embodiment of the present invention.
Fig. 3 is the structural schematic diagram of the substrate of another embodiment of the invention.
Fig. 4 is the structural schematic diagram of the substrate of further embodiment of the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail.The embodiments described below is exemplary, and is only used for explaining this hair
It is bright, and be not considered as limiting the invention.Particular technique or condition are not specified in embodiment, according to text in the art
It offers described technology or conditions or is carried out according to product description.Reagents or instruments used without specified manufacturer,
For can be with conventional products that are commercially available.
In one aspect of the invention, the present invention provides a kind of substrates for OLED illuminating device.According to the present invention
Embodiment, referring to Fig.1, which includes: transparent substrate 1；Planarization on one surface of the transparent substrate 1 is set
Layer 4；The conductive grid 3 being embedded in the planarization layer 4；Table of the planarization layer 4 far from the transparent substrate 1 is set
The transparent electrode 5 being in contact on face and with the conductive grid 3.It can be substantially reduced on the substrate by the way that conductive grid 3 is arranged
The sheet resistance of transparent electrode 5 to effectively reduce the voltage drop in the transparent electrode 5 far from electric current injection end, and then is effectively improved
The uniformity of OLED illuminating device improves luminous efficiency, in addition, due to the presence of conductive grid, it will be using the OLED of the substrate
Illuminating device is divided into multiple independent individuals by an entirety, in this way when locally there is a defect burn-in short circuit occur will not
The luminescent properties in other places are influenced, so can significantly extend the service life of OLED illuminating device.
According to an embodiment of the invention, the specific material of transparent substrate 1 is not particularly limited, those skilled in the art can be with
Flexible choice as needed, in some embodiments of the invention, the specific material of transparent substrate 1 include but is not limited to glass,
Flexible transparent polymeric film (including but not limited to polyethylene naphthalate (PEN), polyether sulfone (PES), polysulfones (PSF),
Polyimides (PI) or polyethylene terephthalate (PET)) etc..In some embodiments of the invention, it is formed flexible saturating
The material of bright substrate is polyethylene terephthalate.Material source is extensive as a result, and cost is relatively low, and light transmission rate is high, makes
It is preferable with performance.
According to an embodiment of the invention, the thickness of transparent substrate can be 25~200 μm.It is transparent in the thickness range
Substrate has optimal mechanical strength and transmitance, conducive to the preparation of the components such as conductive grid, planarization layer and transparent electrode, if
If excessively thin, substrate mechanical strength is lower, the relatively blunt production in subsequent conductive grid, planarization layer and transparent electrode；Such as
If fruit is blocked up, transmitance is relatively low, and the flexible also opposite of flexible and transparent substrate is deteriorated.
In some embodiments of the invention, it by the way that the conductive grid being in contact with transparent electrode is arranged, can significantly reduce
The sheet resistance of transparent electrode improves luminous efficiency and uniformity of luminance to reduce voltage drop.In some embodiments of the present invention
In, conductive grid can be set on the surface of transparent substrate (referring to Fig.1), can not also be in contact with the surface of transparent substrate
(referring to Fig. 2), as long as surface of the conductive grid far from transparent substrate is not flattened, layer is covered, it is possible thereby to guarantee conduction
Grid is effectively contacted with transparent electrode, reduces the sheet resistance of transparent electrode.
In some embodiments of the invention, the height H1 of the conducting wire in conductive grid can be 20~150 nanometers, at this
In altitude range, transparent electrode resistance can be effectively reduced, and the thickness of substrate will not be obviously increased, meets lightening development and become
Gesture.
In some embodiments of the invention, it is produced in order not to the light extraction efficiency to the OLED illuminating device using the substrate
The percent opening of raw negative effect, conductive grid is more than or equal to 85%.The light extraction efficiency of OLED illuminating device will not be produced as a result,
Raw negative effect, guarantees good illuminating effect.
According to an embodiment of the invention, the material for forming conductive grid is not particularly limited, as long as can reduce transparent electricity
The sheet resistance of pole, for example including but be not limited to metal, transparent conductive oxide (such as mix by tin indium oxide, aluminium-doped zinc oxide, fluorine
Miscellaneous tin-oxide and indium oxide mix at least one of gallium oxide), conducting polymer is (in such as polythiophene, polyaniline and polyacetylene
At least one) and at least one of graphene.
According to an embodiment of the invention, in order to further decrease the sheet resistance of transparent electrode, in some specific realities of the invention
It applies in example, the material for forming conductive grid is metal, such as at least one of copper, silver, aluminium, gold and its alloy.Electric conductivity as a result,
Good, sheet resistance is lower, and voltage drop is smaller, is obviously changed using the luminous efficiency and uniformity of luminance of the OLED illuminating device of the substrate
It is kind.
According to an embodiment of the invention, the specific method for forming conductive grid is not particularly limited, those skilled in the art
It can flexible choice according to actual needs.In some embodiments of the invention, the specific method for forming conductive grid can be
Magnetron sputtering method, etching method, silver salt method, grid weave, ink-jet printing, item stitch any one in rubbing method.It grasps as a result,
Make simply, technical maturity, cost is relatively low, and is suitble to large-scale production.
According to an embodiment of the invention, being convenient for transparent electrode to keep flat surface before forming transparent electrode
Preparation, planarization layer is set in the present invention, and conductive grid is embedded in planarization layer, the material for forming planarization layer can
Think silica aerogel, and the method for forming planarization layer include but is not limited to the coating of item seam, spin-coating method, blade coating, solwution method,
Any one in inkjet printing or spray coating method.Easy to operate as a result, convenient, technical maturity is easy to industrialized production.
According to an embodiment of the invention, in order to improve the light extraction efficiency for the OLED illuminating device for using the substrate, it can be with
Adjust planarization layer refractive index, specifically, by selection planarization layer material so that the refractive index of planarization layer be less than etc.
In the refractive index of transparent substrate, as a result, when the light of luminescent layer when planarization layer directive transparent substrate by that will not be totally reflected,
Significantly improve the interior light extraction efficiency of the OLED illuminating device using the substrate.
According to an embodiment of the invention, the sequencing that conductive grid and planarization layer are formed is not particularly limited, ability
Field technique personnel can according to the actual situation with requirement on devices flexible choice.In some embodiments of the invention, can first exist
Conductive grid is formed on the surface of transparent substrate, then forms planarization layer in the mesh of conductive grid；Of the invention another
In some embodiments, planarization layer can also be first formed on the surface of transparent substrate, is then formed on the surface of planarization layer
Latticed groove, and conductive grid is formed in latticed groove.
According to an embodiment of the invention, the specific material for forming transparent electrode is not particularly limited, as long as can after being powered
Effectively excitation luminescent layer shines, and in some embodiments of the invention, the material for forming transparent electrode is selected from electrically conducting transparent
At least one of oxide, conducting polymer and graphene, specifically, the transparent conductive oxide be selected from tin indium oxide,
At least one of aluminium-doped zinc oxide, Fluorin doped tin-oxide and IGO, the conducting polymer are selected from polythiophene, polyaniline
At least one of with polyacetylene.Good conductivity as a result, sheet resistance is lower, using the OLED illuminating device luminous efficiency of the substrate
It is preferable with uniformity of luminance.
According to an embodiment of the invention, forming the method for transparent electrode it is not also specifically limited, those skilled in the art can
With flexible choice as needed.In some embodiments of the invention, the preparation for the transparent electrode that transparent conductive oxide is formed
Method can be any one in magnetron sputtering method, ion sputtering process, resistance-type vapour deposition method, atomic layer deposition method；Conduction is poly-
The preparation method for closing the transparent electrode that object is formed can be method of spin coating, micro-gravure coating process, silk screen print method, inkjet printing
Any one in method, scraper for coating method；The preparation method for the transparent electrode that graphene is formed is epitaxial growth method, chemical gaseous phase
CVD method, graphite oxide reduction method, any one in rubbing method.Simple to operate as a result, technical maturity, cost is relatively low,
And the transparent electrode service performance prepared is preferable.
According to an embodiment of the invention, the height H2 of transparent electrode can be 20~400 nanometers.In the altitude range,
It can guarantee preferable electric conductivity, sheet resistance is smaller, can effectively ensure that the usability of the OLED illuminating device using the substrate
Energy.In some embodiments of the invention, the square resistance of the transparent electrode can be 5~100 Ω/, other
In embodiment, the square resistance of transparent electrode can be 5~20 Ω/.The voltage drop of the substrate is smaller as a result, using the base
The luminous efficiency and uniformity of luminance of the OLED illuminating device of plate significantly improve.
According to an embodiment of the invention, when transparent substrate is flexible and transparent substrate, for glass transparency,
Water oxygen barrier property is relatively bad, therefore, according to an embodiment of the invention, the substrate further includes being arranged described referring to Fig. 3
Transparent barrier layer 2 between bright substrate 1 and the planarization layer 4.Thus, it is possible to significantly improve the OLED illumination using the substrate
The water and oxygen barrier property of device extends the service life of OLED illuminating device.According to some embodiments of the present invention, in order into one
Step improves water and oxygen barrier property, and referring to Fig. 4, transparent barrier layer 2 includes n to the inorganic layer 21 of successively alternately laminated setting and organic
Layer 22, wherein 1≤n≤16.Multilayered structure is alternately mixed by using organic-inorganic as a result, makes its moisture-vapor transmission and oxygen
Vapor permeability is very low, and (such as moisture-vapor transmission is less than or equal to 10-5g/m2For 24 hours, OTR oxygen transmission rate is less than or equal to 10-5cc/
m2Atm for 24 hours), it is remarkably improved the service life of OLED illuminating device.Wherein, it should be noted that merely to showing in Fig. 3
Example property illustrates the structure of inorganic layer and organic layer, and showing has the case where four pairs of inorganic layers and organic layer, but can not understand
For the limitation to the application.
According to an embodiment of the invention, for above-mentioned inorganic layer, mainly by forming fine and close metal or metal compound
Composition granule stacked structure reduces particulate interspaces to realize the barrier to gas and steam.It, can be in some embodiments of the present invention
The material of the formation inorganic layer of use can be selected from silica, aluminium oxide or their mixture.There is preferable water oxygen as a result,
Barrier layer, and refractive index is less than the direct projection rate of transparent substrate, can effectively improve light extraction efficiency.Implementation according to the present invention
Example, the method for forming inorganic layer can be selected from magnetron sputtering method, ion sputtering process, resistance-type vapour deposition method, plasma enhanced chemical
Vapour deposition process (PECVD), electro beam physics vapour deposition method (EBPVD), any one in atomic layer deposition method (ALD),
In some specific embodiments, formed inorganic layer method can for PECVD, deposition process cardinal temperature is low, rate is fast, at
Film quality is good, and pin hole is less, is not easily cracked.According to an embodiment of the invention, the film thickness of inorganic layer can be 5~200nm, it is some
In specific embodiment, the thickness of inorganic layer can be 10~150nm, and in other specific embodiments, the thickness of inorganic layer can be with
For 15~100nm.In the thickness range, barrier property is best, and if inorganic layer is excessively thin, film compactness is inadequate, deposits
In needle pore defect, cause barrier property not high；If inorganic layer is blocked up, it will lead to film bends and crack, cause barrier property
It declines to a great extent.
According to an embodiment of the invention, being directed to above-mentioned organic layer, be coated in inorganic layer surface, can it is smooth, fill up inorganic
The defects of layer pin hole, crackle, form dense construction.Due to inorganic layer inevitably exist in the production process pin hole, crackle,
The defects of protrusion, such gas can directly be passed through by capillary stream, and barrier property sharply declines, so the present invention is in transparent nothing
Machine layer surface coating organic layer is remarkably improved the barrier property of substrate.According to an embodiment of the invention, forming the material of organic layer
It can be any one in polyurethane, polyester or acrylic resin.Thus, it is possible to effectively fill up the pin hole of inorganic layer, crackle
The defects of, the water oxygen barrier property of substrate can be greatly improved with inorganic layer cooperation, and the refractive index of above-mentioned material is less than transparent base
The refractive index of plate can significantly improve the light extraction efficiency and luminous efficiency of the OLED illuminating device using the substrate.According to this
The embodiment of invention, the method for forming organic layer include but is not limited to scraper for coating method, silk screen print method, spray coating method, dimple version
Any one in rubbing method, in some embodiments, coating thickness can be 0.05~10 μm, in other embodiments, coating
Thickness can be 0.1~8 μm, and in other embodiment, coating thickness can be with 0.15~5 μm.The performance of organic layer is most as a result,
It is good, if organic layer is excessively thin, it may not be possible to be completely covered by the defect part of inorganic barrier layer；If organic layer is blocked up
Words, can relative reduction sun light transmission rate.
According to an embodiment of the invention, while improving the water and oxygen barrier property of aforesaid substrate, in order to further increase
Light extraction efficiency can make the refractive index of transparent group of each layer be less than or equal to the refractive index of transparent substrate.The substrate is used as a result,
OLED illuminating device the light that issues of luminescent layer by total reflection phenomenon, light will not occur when transparent group of each layer intake transparent substrate
Recovery rate significantly improves.In some embodiments of the invention, the refractive index of the transparent barrier layer is less than or equal to described
The refractive index of transparent substrate, and the refractive index of the planarization layer is less than the refractive index of the transparent substrate.Luminescent layer as a result,
There is no the condition being totally reflected in transmission path, most light can be emitted, and light extraction efficiency greatly improves.
According to an embodiment of the invention, aforesaid substrate of the invention meets one of the following conditions: moisture-vapor transmission is less than
Equal to 10-5g/m2·24h；OTR oxygen transmission rate is less than or equal to 10-5cc/m2·24h·atm；Light transmittance is more than or equal to 80%, preferably
More than or equal to 85%.The OLED illuminating device water oxygen good barrier property of the substrate, long service life are used as a result, and voltage reduces, hair
Optical uniformity is good, and luminous efficiency is high, and light extraction efficiency is high, and illuminating effect is preferable.
In another aspect of this invention, the present invention provides a kind of OLED illuminating devices.According to an embodiment of the invention, should
OLED illuminating device includes mentioned-above substrate.The OLED illuminating device has all features of mentioned-above substrate and excellent
Point, this is no longer going to repeat them.
According to an embodiment of the invention, the OLED illuminating device can also include successively other than mentioned-above substrate
It is stacked luminescent layer and metal electrode on surface of the transparent electrode far from transparent substrate.In some embodiments of the present invention
In, there can also be transport layer etc. between transparent electrode and luminescent layer.
The embodiment of the present invention is described below in detail.
Embodiment 1
The preparation of transparent barrier layer:
125 μ m thick PET base materials are selected, using plasma first enhances chemical vapour deposition technique on its surface
(PECVD) the silica inorganic layer of 30nm thickness is made, then polyurethane resin binder is coated on its surface, thickness is made after dry
Then the organic layer that degree is 5.1 μm alternately makes 3 pairs of silicon oxide layers again according to above-mentioned condition and urethane resin layer is made transparent
Barrier layer.
The preparation of conductive grid/planarization layer:
It is coated with one layer of nano-silver thread solution in above-mentioned transparent obstructive layer surface, is formed after heat drying with a thickness of 150nm's
Silver wire conductive grid.Be then followed by and be coated with one layer of silica aerogel in silver wire grid conductive layer surface, formed after dry with a thickness of
The planarization layer of 140nm.
The preparation of transparent electrode:
The indium tin oxide (ITO) that a layer thickness is 150nm is made on above-mentioned conductive grid/planarization layer surface transparent to lead
Electric layer.
The moisture-vapor transmission of substrate obtained above is 5.3 × 10-6g/m2For 24 hours, OTR oxygen transmission rate is 9.2 × 10- 6cc/m2Atm for 24 hours, square resistance are 11.8 Ω/, light transmittance 88.1%.
Substrate obtained above is used to assemble flexible OLED illuminating device, packaging structure: the present embodiment substrate/
MoO3/ NPB/TCTA: acetopyruvic acid two (1- phenyl isoquinolin quinoline-C2, N) closes iridium (III)/TPBi/LiF/Al/UV glue/high resistant
(moisture-vapor transmission is 4.7 × 10 to diaphragm-6g/m2For 24 hours, OTR oxygen transmission rate is 8.5 × 10-6cc/m2·24h·atm)。
Embodiment 2
The preparation of transparent barrier layer:
125 μ m thick PET base materials are selected, using plasma first enhances chemical vapour deposition technique on its surface
(PECVD) the silicon nitride inorganic layer of 20nm thickness is made, then polyester resin binder is coated on its surface, thickness is made after dry
For 0.1 μm of organic layer, 4 pairs of silicon nitride layers are alternately then made again according to above-mentioned condition and transparent obstructive is made in polyester resin layer
Layer.
The preparation of conductive grid/planarization layer:
It uses vacuum vapour deposition to deposit a layer thickness in above-mentioned transparent obstructive layer surface to lead for the silver wire metal grill of 100nm
Electric layer.It is then followed by and is coated with one layer of silica aerogel in silver wire metal grill conductive layer surface, formed after dry with a thickness of 85nm's
Planarization layer.
The preparation of transparent electrode:
In the aluminum zinc oxide that above-mentioned conductive grid/planarization layer surface uses magnetron sputtering method to make a layer thickness as 60nm
(AZO) transparency conducting layer.
The moisture-vapor transmission of substrate obtained above is 2.7 × 10-6g/m2For 24 hours, OTR oxygen transmission rate is 5.6 × 10- 6cc/m2Atm for 24 hours, square resistance are 8.3 Ω/, light transmittance 88.5%.
Substrate obtained above is used to assemble flexible OLED illuminating device, packaging structure and high-resistant diaphragm with implementation
Example 1.
Embodiment 3
The preparation of transparent barrier layer:
100 μ m thick PET base materials are selected, use the oxidation of atomic layer deposition method (ALD) production 5nm thickness first on its surface
Then in its surface polyacrylic acid coating resinoid bond the organic layer with a thickness of 10 μm is made, then in aluminium inorganic layer after dry
4 pairs of alumina layers are alternately made again according to above-mentioned condition and transparent barrier layer is made in polyacrylic resin layer.
The preparation of conductive grid/planarization layer:
It is coated with one layer of nano-silver thread solution in above-mentioned transparent obstructive layer surface, is formed after heat drying with a thickness of 150nm's
Silver wire grid conducting layer.Be then followed by and be coated with one layer of silica aerogel in silver wire grid conductive layer surface, formed after dry with a thickness of
The planarization layer of 140nm.
The preparation of transparent electrode:
In the aluminum zinc oxide that above-mentioned conductive grid/planarization layer surface uses magnetron sputtering method to make a layer thickness as 60nm
(AZO) transparency conducting layer.
The moisture-vapor transmission of substrate obtained above is 2.3 × 10-6g/m2For 24 hours, OTR oxygen transmission rate is 4.7 × 10- 6cc/m2Atm for 24 hours, square resistance are 10.7 Ω/, light transmittance 88.7%.
Substrate obtained above is used to assemble flexible OLED illuminating device, packaging structure and high-resistant diaphragm with implementation
Example 1.
Embodiment 4
The preparation of transparent barrier layer:
125 μ m thick PET base materials are selected, using plasma first enhances chemical vapour deposition technique on its surface
(PECVD) the silicon nitride inorganic layer of 50nm thickness is made, then polyester resin binder is coated on its surface, thickness is made after dry
For 0.5 μm of organic layer, 3 pairs of silicon nitride layers are alternately then made again according to above-mentioned condition and transparent obstructive is made in polyester resin layer
Layer.
The preparation of conductive grid/planarization layer:
It uses magnetron sputtering method to deposit a layer thickness in above-mentioned transparent obstructive layer surface to lead for the silver wire metal grill of 90nm
Electric layer.It is then followed by and is coated with one layer of silica aerogel in silver wire metal grill conductive layer surface, formed after dry with a thickness of 75nm's
Planarization layer.
The preparation of transparent electrode:
It uses magnetron sputtering method to make a layer thickness on above-mentioned conductive grid/planarization layer surface and mixes alumina for 60nm
Zinc (AZO) transparency conducting layer.
The moisture-vapor transmission of substrate obtained above is 5.8 × 10-6g/m2For 24 hours, OTR oxygen transmission rate is 7.2 × 10- 6cc/m2Atm for 24 hours, square resistance are 8.5 Ω/, light transmittance 87.9%.
Substrate obtained above is used to assemble flexible OLED illuminating device, packaging structure and high-resistant diaphragm with implementation
Example 1.
Embodiment 5
The preparation of transparent barrier layer:
100 μ m thick PET base materials are selected, use the oxygen of atomic layer deposition method (ALD) production 15nm thickness first on its surface
Change aluminium inorganic layer, then in its surface polyacrylic acid coating resinoid bond, the organic layer with a thickness of 0.05 μm be made after dry,
Then 3 pairs of alumina layers are alternately made again according to above-mentioned condition and transparent barrier layer is made in polyacrylic resin layer.
The preparation of conductive grid/planarization layer:
It is coated with one layer of nano-silver thread solution in above-mentioned transparent obstructive layer surface, is formed after heat drying with a thickness of 120nm's
Silver wire grid conducting layer.Be then followed by and be coated with one layer of silica aerogel in silver wire grid conductive layer surface, formed after dry with a thickness of
The planarization layer of 90nm.
The preparation of transparent electrode:
It is saturating that the PEDOT:PSS conducting polymer that a layer thickness is 50nm is coated on above-mentioned conductive grid/planarization layer surface
Bright conductive layer.
The moisture-vapor transmission of substrate obtained above is 6.7 × 10-6g/m2For 24 hours, OTR oxygen transmission rate is 8.1 × 10- 6cc/m2Atm for 24 hours, square resistance are 12.7 Ω/, light transmittance 87.7%.
Substrate obtained above is used to assemble flexible OLED illuminating device, packaging structure and high-resistant diaphragm with implementation
Example 1.
Comparative example 1
The preparation of transparent electrode:
125 μ m thick PET base materials are selected, it is transparent to make the indium tin oxide (ITO) that a layer thickness is 150nm on its surface
Conductive layer.
The moisture-vapor transmission of substrate obtained above is 12.3g/m2For 24 hours, OTR oxygen transmission rate 34cc/m2·24h·
Atm, square resistance are 75.6 Ω/, light transmittance 88.3%.
Substrate obtained above is used to assemble flexible OLED illuminating device, packaging structure and high-resistant diaphragm with implementation
Example 1.
The moisture-vapor transmission of fexible film prepared by embodiment 1-5 and comparative example 1, OTR oxygen transmission rate, square resistance and
Transmitance performance indicator, and assembling flexibility OLED illuminating device, are shown in Table 1.Wherein, the effective area of flexible OLED illuminating device
For 0.3cm*0.3cm, luminous efficiency, the homogeneity that shines and T70The testing standard that service life uses is CSA015-2012 " organic light emission
Diode illumination test method "；Test equipment is PR-655 spectral luminance meter and Keithly2400 type digital sourcemeter；Shine effect
Rate is brightness 1000cd/m2When power efficiency；The homogeneity that shines takes light emission luminance average value using 5 methods of testing, calculates public
Formula are as follows: (maximum brightness-minimum brightness)/2 × average brightness；T70Service life is OLED illuminating device at 25 DEG C, under 45%RH, is held
It is continuous to light to the time needed for brightness decay to original intensity 70%.
Table 1: each embodiment and comparative example tables of data
Found out by 1 data of table, the base that substrate is prepared relative to comparative example 1 is prepared in embodiment 1,2,3,4 and 5
Plate, block water oxygen and electric conductivity it is obviously excellent, assemble flexibility OLED illuminating device luminous efficiency promoted 60% or more, shine
Homogeneity improves 70% or more, and luminescent lifetime extends 1000 times or more.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (15)
1. a kind of substrate for OLED illuminating device characterized by comprising
Transparent substrate；
Planarization layer, the planarization layer are arranged on a surface of the transparent substrate；
Conductive grid, the conductive grid are embedded in the planarization layer；
Transparent electrode, the transparent electrode are arranged on surface of the planarization layer far from the transparent substrate, and with it is described
Conductive grid is in contact.
2. substrate according to claim 1, which is characterized in that the refractive index of the planarization layer is less than or equal to described transparent
The refractive index of substrate.
3. substrate according to claim 1 or 2, which is characterized in that the transparent substrate is flexible and transparent substrate, and described
Substrate further includes the transparent barrier layer being arranged between the transparent substrate and the planarization layer.
4. substrate according to claim 3, which is characterized in that the refractive index of the transparent barrier layer is less than or equal to described
The refractive index of bright substrate.
5. substrate according to claim 4, which is characterized in that the refractive index of the planarization layer is less than or equal to described transparent
The refractive index of barrier layer, and the refractive index of the transparent barrier layer is less than or equal to the refractive index of the transparent substrate.
6. substrate according to claim 3, which is characterized in that the transparent barrier layer includes that n is set to successively alternately laminated
The inorganic layer and organic layer set, wherein 1≤n≤16.
7. substrate according to claim 6, which is characterized in that the inorganic layer with a thickness of 5~200 nanometers, preferably
10~150 nanometers, more preferably 15~100 nanometers；
The organic layer with a thickness of 0.05~10 micron, preferably 0.1~8 micron, more preferably 0.15~5 micron.
8. substrate according to claim 6, which is characterized in that the material for forming the inorganic layer is selected from silica and oxidation
At least one of aluminium；
The material for forming the organic layer is selected from least one of polyurethane, polyester and acrylic resin.
9. substrate according to claim 1, which is characterized in that the percent opening of the conductive grid is more than or equal to 85%.
10. substrate according to claim 1, which is characterized in that the height of the conducting wire in the conductive grid is 20~150
Nanometer.
11. substrate according to claim 1, which is characterized in that the height of the transparent electrode is 20~400 nanometers.
12. substrate according to claim 1, which is characterized in that the square resistance of the transparent electrode be 5~100 Ω/
, preferably 5~20 Ω/.
13. substrate according to claim 1, which is characterized in that meet one of the following conditions:
Moisture-vapor transmission is less than or equal to 10-5g/m2·24h；
OTR oxygen transmission rate is less than or equal to 10-5cc/m2·24h·atm；
Light transmittance is more than or equal to 80%, preferably greater than or equal to 85%.
14. substrate according to claim 1, which is characterized in that the material for forming the transparent substrate is selected from poly- naphthalene diformazan
At least one of sour glycol ester, polyether sulfone, polysulfones, polyimides and polyethylene terephthalate；
The material for forming the planarization layer is selected from silica aerogel；
The material for forming the conductive grid is selected from metal, preferably at least one of silver and copper；
The material for forming the transparent electrode is selected from least one of transparent conductive oxide, conducting polymer and graphene,
Preferably, the transparent conductive oxide mixes oxygen selected from tin indium oxide, aluminium-doped zinc oxide, Fluorin doped tin-oxide and indium oxide
Change at least one of gallium, the conducting polymer is selected from forming in transparent electrode polythiophene, polyaniline and polyacetylene at least
It is a kind of.
15. a kind of OLED illuminating device, which is characterized in that including substrate described in any one of claim 1-14.
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