CN109037441A - Semi-conductor electricity storage material and preparation method thereof and flexible electrical storage device prepared therefrom and preparation method - Google Patents
Semi-conductor electricity storage material and preparation method thereof and flexible electrical storage device prepared therefrom and preparation method Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 230000005611 electricity Effects 0.000 title claims abstract description 42
- 239000011232 storage material Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 14
- 238000004528 spin coating Methods 0.000 claims abstract description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 34
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 21
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 16
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 14
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 13
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 235000019441 ethanol Nutrition 0.000 claims description 10
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 2
- 150000002576 ketones Chemical class 0.000 claims 1
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000006399 behavior Effects 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- 239000004411 aluminium Substances 0.000 abstract description 4
- 238000011160 research Methods 0.000 abstract description 4
- 238000005452 bending Methods 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
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- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- -1 Hydrogen furans Chemical class 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- GNHQSAUHXKRQMC-UHFFFAOYSA-N benzene;chlorine Chemical compound [Cl].C1=CC=CC=C1 GNHQSAUHXKRQMC-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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Abstract
The invention discloses semi-conductor electricity storage materials and preparation method thereof and flexible electrical storage device prepared therefrom and preparation method；For the environment and poor high temperature stability of current electric storage material, poor repeatability, the problems such as easy to damage during transport and utilization, by way of spin coating, Spiro-OMeTAD is prepared as aluminium/Spiro-OMeTAD/ITO glass sandwich structure resistive formula random access memory (RRAM), it is successfully realized high performance electric storage behavior, its preparation process is simple, device environment and high-temperature stability are good, reproducible, flexible grade, which expands material source for the research of electric memory technology and increases its practical value, to be of great significance.
Description
Technical field
The invention belongs to technical field of semiconductor, prepare high yield, good electrical storage device flexible by spin coating,
It is one more particularly to semi-conductor electricity storage material and preparation method thereof and flexible electrical storage device prepared therefrom and preparation method
Electric storage material technology of the kind based on Spiro-OMeTAD.
Background technique
Since the 1960s, the 5th information technology revolution epoch are come into, with consumer electronics product
Substantially growth, the continuous promotion of computer processor, video card capabilities, present memory has become the maximum bottle of computer overall performance
Neck.People stimulate the continuous expansion of storage demand the continuous development of random access memory, and China is as global electronic
The self-supporting capability of the manufacture base of product, memory is also relatively weak.External large size semiconductor company is to memory technology and produces
Product monopolization forms major hidden danger to China's information industry development and information security.Therefore, domestic large capacity, high density are new
Type semiconductor memory technologies are extremely urgent.
Under the background that DRAM storage technology is unable to satisfy bulk information storage demand, compared with DRAM, the storage of RRAM
Device size is small, speed is fast, low energy consumption, the storage time of information is also longer and safer, service life will also promote about 10 times.
RRAM will likely break the boundary of memory and hard disk, so that they are combined into one.Therefore, in recent years, in area information storage, people
For random resistance access memory (RRAM) conduct in-depth research, multistage storage is realized by multiple resistance states,
So that the memory capacity of information is from 2nIt is promoted to 3nEven 4n, to greatly improve transmission speed.For information storage capacity
Promotion is of great significance.For semiconductor material, it is primarily present device preparation method complexity, low yield etc. at present and asks
Topic.
Summary of the invention
For current electric storage material environment and poor high temperature stability, low yield, poor repeatability the problems such as, present invention wound
The property made prepares semi-conductor electricity storage material using Spiro-OMeTAD material, and successfully prepares the semiconductor of sandwich structure
Electrical storage device realizes high yield, good semi-conductor electricity storage behavior flexible, and device environment and high-temperature stability are good, half
The study direction and practical value of conductor electricity memory technology are of great significance.
The present invention adopts the following technical scheme:
The preparation method of semi-conductor electricity storage material, includes the following steps, by 2,2', 7,7'- tetra- [(the 4- methoxybenzenes of N, N- bis-
Base) amino] -9,9'- spiral shell two fluorenes solution be spin-coated on the conducting surfaces of treated conductive substrates, then made annealing treatment, made
Standby semi-conductor electricity storage material.
A kind of preparation method of electrical storage device, includes the following steps, by 2,2', 7,7'- tetra- [(the 4- methoxyl groups of N, N- bis-
Phenyl) amino] -9,9'- spiral shell two fluorenes solution be spin-coated on the conducting surfaces of treated conductive substrates, then made annealing treatment,
Prepare semi-conductor electricity storage material；Then electrode is prepared on semi-conductor electricity storage material surface, obtains electrical storage device.
In above-mentioned technical proposal, 2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell, two fluorenes solution
Concentration be 8~11 mg/mL, spin coating revolving speed be 1000~7000 r/h, preferably 4000~5500 r/h；By conductive substrates according to
It is secondary to be cleaned with washing powder, acetone, ethyl alcohol, cleaning solution, obtain treated conductive substrates；The cleaning solution is hydrogen peroxide；
In 2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell, two fluorenes solution, solvent is tetrahydrofuran or chlorine
Benzene；The conductive substrates are the ito glass of ito glass, PET-ITO or OPA processing.
In above-mentioned technical proposal, the temperature of annealing is 40~100 DEG C, and the time is 11~13 hours.
In above-mentioned technical proposal, electrode is prepared on semi-conductor electricity storage material surface by the way of aluminizing.
According to the semi-conductor electricity storage material or electrical storage device of the preparation of above-mentioned preparation method.
In semi-conductor electricity storage material prepared by the present invention or electrical storage device, 2,2', 7,7'- tetra- [(the 4- first of N, N- bis-
Phenyl) amino] -9,9'- spiral shell two fluorenes film with a thickness of 80~300 nanometers, preferably 150~180 nanometers.
Above-mentioned semi-conductor electricity storage material is preparing the application in electrical storage device；Or [N, the N- bis- of 2,2', 7,7'- tetra-
(4- methoxyphenyl) amino] -9,9'- spiral shell two fluorenes preparing the application in semi-conductor electricity storage material or electrical storage device.
Specifically, electrical storage device of the invention can make as follows:
(1) ito glass (is carried out by washing powder wash clean, ultrapure water, acetone, ethyl alcohol difference 10 min of ultrasound with OPA processing ITO
Surface modification device: the ITO after ultrasound is placed in the tetrahydrofuran solution of 1 mmol/L OPA 48 hours) use peroxide
Change hydrogen to rinse, be soaked in ethyl alcohol, seals stand-by；
(2) Spiro-OMeTAD is dissolved in tetrahydrofuran or chlorobenzene；
(3) ito glass is dried up, in conducting surface with certain configured solution of revolving speed spin coating；
(4) device prepared saves in tissue culture plate, and 40~100 ° are annealed 11~13 hours；
(5) it aluminizes, completely by aluminum steel polishing (removing surface alumina oxide), is cut into spillikin, in ethanol after 10 min of ultrasound, uses second
Alcohol rinses several times, aluminizes, prepares electrical storage device.
In above-mentioned preparation method, the size of ito glass as described in step (1) is about the cm of 2 cm × 2.
Semiconductor material of the invention, 2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell, two fluorenes
(Spiro-OMeTAD) have the effects that optimize interface, adjust level-density parameter, help to obtain higher incident photon-to-electron conversion efficiency,
It is more containing oxygen radical in Sprio-OMeTAD structure, when applying voltage, the aggregation of Lacking oxygen can be facilitated and hole is caused to be led
Electricity, so that the electricity for causing resistance different in Lacking oxygen aggregation and showing different resistance states and different systems being presented stores
Performance shows higher ternary yield, good environmental stability, gratifying flexibility, deposits for Sprio-OMeTAD in electricity
The beginning has been started in the application in storage field.
Compared with prior art, using above-mentioned technical proposal the present invention has the advantage that
(1) present invention is using semiconductor material as the intermediate active layer of electrical storage device, by molecule system by way of spin coating
It is standby to remove surface in ITO, it is prepared for a series of semi-conductor electricity memory device of the high yield of the sandwich type of different-thickness, electricity
Memory device prepares simple, convenient, easily operated, flexible good；
(2) the semi-conductor electricity memory device in the present invention is successfully realized ternary electric storage behavior；
(3) compared with traditional device, the semi-conductor electricity memory device in the present invention shows higher ternary yield, good
Environmental stability, gratifying flexibility, selection and practical value for semi-conductor electricity memory device research material have pole
Big meaning.
Detailed description of the invention
Fig. 1 is that the present invention is based on the device architecture schematic diagrames of semiconductor material Spiro-OMeTAD；
Fig. 2 is Spiro-OMeTAD in the electric storage behavior and stability test for preparing sandwich type device；Tetrahydrofuran is molten
Agent is spin-coated on the binary storage behavior (a) that the processed ITO surface test of OPA obtains under the spin speed of 4500 r/s
And its in current time stability scanning (b), ternary storage behavior (c) and its electric current under 10000 seconds under 10000 seconds
Time stability scans (d).
Fig. 3 is the sectional view based on the electrical storage device prepared under Spiro-OMeTAD molecule difference spin speed；
Fig. 4 is Spiro-OMeTAD molecule in different solvents, the semi-conductor electricity memory device prepared under different spin speeds
Each system yield；It is solvent (d) and corresponding cut-in voltage distribution map by solvent (c), chlorobenzene of tetrahydrofuran；Tetrahydro
Furans is solvent (a), chlorobenzene is solvent (b)；
Fig. 5 be Spiro-OMeTAD dissolved in chlorobenzene, with the spin speed of 5000 r/s, dissolved in tetrahydrofuran with
The spin speed of 4500 r/s, by sample be spin-coated on OPA processing ito glass surface to electricity storage yield statistics (a) and its
Corresponding cut-in voltage distribution figure (b).
It is that 32 ° of crooked process radius are that the spin speed with 4500 r/s that Fig. 6 dissolves in tetrahydrofuran, which is in bending degree,
Each system yield (a) when 0.98 cm under difference bending number, when being 1000 bending number, under different crooked process radius, respectively
The yield (b) of a system.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to further illustrate the technical scheme of the present invention.Unless otherwise indicated,
Reagent used in the following example, material, instrument etc. can be obtained by commercial means.
Semiconductor material Spiro-OMeTAD is utilized herein, realizes Spiro-OMeTAD in the research of electric storage performance,
Show ternary memory technology, obtain high yield, it is benign can, the electric storage performance of good stability, solve device yield it is low,
The problem of stability difference.As shown in Figure 1, electrical storage device is divided into three layers substantially, be followed successively by from bottom to top glass/ITO substrates layer,
Semiconductive thin film (Spiro-OMeTAD) layer and aluminium electrode layer.
Embodiment one: preparation is based on the semi-conductor electricity memory device of semiconductor material (Spiro-OMeTAD)
Specific preparation process is as follows:
1.ITO glass (carries out table with OPA processing ITO by washing powder wash clean, ultrapure water, acetone, ethyl alcohol difference ultrasound 10min
Device is modified in face: the ITO after ultrasound is placed in the tetrahydrofuran solution of 1 mmol/L OPA 48 hours) use peroxidating
Hydrogen rinses, is soaked in ethyl alcohol, seals stand-by；
2. Spiro-OMeTAD is dissolved in tetrahydrofuran or chlorobenzene；
3. ito glass is dried up, in conducting surface with certain configured solution of revolving speed spin coating；
4. the good ito glass of spin coating saves in tissue culture plate, 80 ° of annealing 12h obtain semi-conductor electricity storage material；
5. aluminizing, completely by aluminum steel polishing (removing surface alumina oxide), it is cut into spillikin, in ethanol after ultrasound 10min, uses ethyl alcohol
It flushes three times, in instrument, aluminizes on semi-conductor electricity storage material surface, prepare electrical storage device.
Aluminium electrode is vaporized in semiconductor (Spiro-OMeTAD) film layer, until aluminium electrode thickness reaches 100 and receives
Rice, obtains electrical storage device accordingly based on semiconductor material.Evaporation condition is as follows: 5 × 10-4 Under Pa vacuum condition, steam
The rate of plating is 2 A/s.
As shown in Fig. 2, for the binary system and ternary electric storage performance figure of core, and under the time of 10000 s,
Reagent Spiro-OMeTAD is dissolved in tetrahydrofuran, spin speed obtains typical stability under the speed of 4500 r/s
Figure shows to be successfully realized electric storage performance based on semiconductor material, and possesses good environmental stability.
As shown in figure 3, be using tetrahydrofuran as solvent in the case where under conditions of different rotation rates spin coating the section SEM
Characterization, illustrate the active layer that different-thickness is obtained under different spin speeds, a to e for from 1500 r/min to 6000 r/min,
Thickness is from 282 nanometers to 84 nanometer.
As shown in figure 4, preparing different solvents, different activities thickness degree and rough surface under conditions of different rotation rates
The device of degree counts the error of the yield of each system and cut-in voltage distribution in same number electricity storage performance, with four
Hydrogen furans be in the solution of solvent under the speed conditions of 4500 r/min, cut-in voltage narrowly distributing and two cut-in voltages point
Most open, in the solution using chlorobenzene as solvent under the speed conditions of 5000 r/min, cut-in voltage narrowly distributing and two unlatchings
Voltage point is most opened, the figure of ' other ' i.e. without electric storage performance in figure.
As shown in Figure 5 a, on the basis of testing four, sample Spiro-OMeTAD is spin-coated on to the ito glass of OPA processing
Surface, the spin speed with 5000 r/s dissolved in chlorobenzene, the spin coating with 4500 r/s dissolved in tetrahydrofuran
Speed is then to its electric storage performance test, by statistical result showed, compared with the device yield of unused OPA processing, tetrahydro furan
The device muttered as solvent, the ternary yield that the surface ITO OPA is handled obviously occur rising sign, and Fig. 5 b is shown in 4500
Under conditions of r/s, tetrahydrofuran handles ITO table as the device yield statistics of the different-thickness of solvent and the OPA of 4500 r/s
Device yield behind face compares；In the experiment by thickness condition and surface treatment condition, ternary of the THF as solvent is found
Electric storage performance yield is high.
It is flexible that test result is as follows:
It is flexible to test being dissolved in tetrahydrofuran of selection, under conditions of the spin speed of 4500 r/s, sample is revolved
It is coated in the flexible device surface of PET-ITO, using the device detection of apparatus selection difference bending number, according to statistics, electricity is deposited
Performance is stored up without apparent variation, as shown in Figure 6 a, under the bending of 32 ° of 0.98 cm radius, by choosing in 0-10000 times
The electric storage performance statistics for taking several different bending numbers, illustrates the electric storage performance for not changing device substantially, and be possible to
Increase the yield of device.
Different bending degrees is set by instrument, and then carries out the test and each storage to the electric storage performance of device
The statistics of system, with the increase of crooked process radius, electric storage performance does not find to be decreased obviously, and as shown in Figure 6 b, illustrates to bend base
Originally the electric storage performance of device will not be damaged.
In conclusion the present invention utilizes Spiro-OMeTAD, Sanming City is successfully prepared by simple, convenient and fast spin coating method
The electrical storage device for controlling structure, realizes the electric storage behavior of ternary WORM type, and Spiro-OMeTAD material itself thermally decomposes
Temperature, therefore can be with high temperature resistant 400 or so, and device shows very high yield and flexibility, in different bending time
Performance downward trend is not shown after number, crooked process radius, solves current semi-conductor electricity memory device low yield, flexibility
Poor, unstable problem.
Claims (10)
1. the preparation method of semi-conductor electricity storage material, which is characterized in that include the following steps, by 2,2', 7,7'- tetra- [N, N-
Two (4- methoxyphenyl) amino] -9,9'- spiral shell two fluorenes solution be spin-coated on the conducting surfaces of treated conductive substrates, then into
Row annealing, prepares semi-conductor electricity storage material.
2. a kind of preparation method of electrical storage device, which is characterized in that include the following steps, by 2,2', 7,7'- tetra- [N, N- bis-
(4- methoxyphenyl) amino] -9,9'- spiral shell two fluorenes solution be spin-coated on the conducting surfaces of treated conductive substrates, then carry out
Annealing, prepares semi-conductor electricity storage material；Then electrode is prepared on semi-conductor electricity storage material surface, obtains electrical storage
Part.
3. preparation method according to claim 1 or 2, which is characterized in that 2,2', 7,7'- tetra- [(the 4- methoxies of N, N- bis-
Base phenyl) amino] -9,9'- spiral shell two the concentration of fluorenes solution be 8~11 mg/mL, the revolving speed of spin coating is 1000~7000 r/h.
4. preparation method according to claim 1 or 2, which is characterized in that the temperature of annealing is 40~100 DEG C,
Time is 11~13 hours.
5. preparation method according to claim 1 or 2, which is characterized in that conductive substrates are successively used to washing powder, third
Ketone, ethyl alcohol, cleaning solution cleaning, obtain treated conductive substrates；The cleaning solution is hydrogen peroxide.
6. preparation method according to claim 1 or 2, which is characterized in that 2,2', 7,7'- tetra- [(the 4- methoxies of N, N- bis-
Base phenyl) amino] for -9,9'- spiral shell two in fluorenes solution, solvent is tetrahydrofuran or chlorobenzene；The conductive substrates be ito glass,
The ito glass of PET-ITO or OPA processing.
7. preparation method according to claim 2, which is characterized in that in semi-conductor electricity storage material by the way of aluminizing
Surface prepares electrode.
8. the semi-conductor electricity storage material or electrical storage device of preparation method preparation according to claim 1 or 2.
9. semi-conductor electricity storage material according to claim 8, which is characterized in that in semi-conductor electricity storage material, 2,2',
Two fluorenes film of 7,7'- tetra- [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell with a thickness of 80~300 nanometers.
10. semi-conductor electricity storage material described in claim 8 is preparing the application in electrical storage device；Or 2,2', 7,7'- tetra-
Two fluorenes of [N, N- bis- (4- methoxyphenyl) amino] -9,9'- spiral shell is in preparing semi-conductor electricity storage material or electrical storage device
Application.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137357A (en) * | 2019-05-23 | 2019-08-16 | 苏州大学 | Good flexibility sandwich type PN junction electrical storage device |
| WO2023167839A3 (en) * | 2022-03-03 | 2023-10-12 | Massachusetts Institute Of Technology | Adhesive bonding for bifacial and tandem solar cells |
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