CN105070830A - Fluorine-triphenylamine conjugated polymer electric storage material and preparation method of electric storage device - Google Patents
Fluorine-triphenylamine conjugated polymer electric storage material and preparation method of electric storage device Download PDFInfo
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- CN105070830A CN105070830A CN201510486822.XA CN201510486822A CN105070830A CN 105070830 A CN105070830 A CN 105070830A CN 201510486822 A CN201510486822 A CN 201510486822A CN 105070830 A CN105070830 A CN 105070830A
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- 229920000547 conjugated polymer Polymers 0.000 title claims abstract description 37
- 238000003860 storage Methods 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- YSGZPEILUZVKDO-UHFFFAOYSA-N [F].C1(=CC=CC=C1)N(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound [F].C1(=CC=CC=C1)N(C1=CC=CC=C1)C1=CC=CC=C1 YSGZPEILUZVKDO-UHFFFAOYSA-N 0.000 title abstract 3
- 239000011232 storage material Substances 0.000 title abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 25
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 24
- 230000005611 electricity Effects 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 150000002220 fluorenes Chemical class 0.000 claims description 9
- -1 methoxyl group Chemical group 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229920006254 polymer film Polymers 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000012044 organic layer Substances 0.000 claims description 4
- 238000006069 Suzuki reaction reaction Methods 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000001291 vacuum drying Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920002098 polyfluorene Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses a preparation method of a fluorine-triphenylamine conjugated polymer electric storage device. The method comprises the following steps: carrying out ultrasonic cleaning on ITO glass in water, absolute ethyl alcohol, acetone absolute ethyl alcohol and deionized water, and keeping the ITO glass in the absolute ethyl alcohol for standby application; serving a fluorine-triphenylamine conjugated polymer as an electric storage material and preparing a 3-15 mg/mL polymer solution; spin coating the polymer solution onto the ITO glass uniformly, and then, carrying out vacuum drying to remove the solvent; and plating top electrodes Al to the polymer through a vacuum evaporation method. The organic electric storage device prepared in the invention has the advantages of simple operation, low cost, low working voltage, and large switch current ratio, and has a good application prospect in the information storage field.
Description
Technical field
The invention belongs to electrical storage new material and technical field.Be specifically related to the preparation method of fluorenes-triphenylamine conjugated polymer electricity storage medium and electrical storage device thereof.
Background technology
Along with the develop rapidly of information technology, electronic digital product upgrades fast, makes the demand of people to electric storage chip growing.Utilize traditional inorganic semiconductor material to prepare the technology of electrical storage device very ripe, make it fully be applied at each message area.The continuous progress of information industry makes small size, the high integrated inexorable trend becoming electrical storage device development.But the size of chip can not unlimited reducing, highly integratedly more technical barriers will be faced.Therefore, the Novel electric storage medium of development high-performance, low cost becomes the developing direction of present stage.
Recently, electrostrictive polymer memory device arouses great concern as the emerging field of organic electronics aspect.Organic Electricity memory device carrys out storage data according to the change of high and low conductivity response, thus show bistability.Different from silicon-based memory part, organic memory device be by coding " 0 ", " 1 " mode by a large amount of charge storage in the cells, which.Relative to Small molecular memory device, polymeric groups has a lot of advantage, and such as flexible, easy film forming, quality be light, the easy distinguishing feature such as processing, is subject to the extensive concern of researcher, and obtains and develop fast comprehensively.In addition, relative to without electromechanical memory devices material, the most obvious advantage of electrostrictive polymer memory device material is: the density of raising information storage that can be exponential by the stacking ability of polymer three-dimensional; Prepare the operating procedure avoiding high temperature, high vacuum in the process of electrical storage device, greatly reduce process costs, be conducive to promoting the use of of Organic Electricity memory device material.In the near future, very likely replace traditional without electromechanical memory devices material.
Polyfluorene group has the mobility of higher charge carrier, and charge carrier transmits along its conjugated main chain, is good photoelectric material.In polyfluorene, introduce electron donating group can improve HOMO energy level, improve hole transport performance.Triphenylamine is a kind of typical hole mobile material, introduces cavity transmission ability and thermal stability that trianilino group is conducive to strengthening polymer, reduce the energy battier from ito anode injected hole simultaneously in main chain.And the oxygen on methoxyl group and phenoxy group also has to electro, can improve the electron donation of triphenylamine further, thus improve the electric memory property of copolymer.
Summary of the invention
The object of the present invention is to provide fluorenes-triphenylamine conjugated polymer electricity storage medium, and by the preparation method of this conjugated polymer as the electrical storage device of active material.The fluorenes that the present invention relates to-triphenylamine conjugated polymer itself has good memory property, can separately as electrical storage device active layer and do not need to add other electron acceptor.In addition, the introducing of methoxyl group and phenoxy group enhances the electron donation of triphenylamine, further increases the electric memory property of polymer.
Fluorenes involved in the present invention-triphenylamine conjugated polymer is that this seminar is with Pd (PPh
3)
4as catalyst, Na
2cO
3solution is as alkali source, N
2as protection gas, obtain according to Suzuki coupling reaction mechanism, concrete steps reference literature [1].
[1]WenfenSu,RueitangChen,YunChen.ThermallyCrosslinkableHole-TransportingPoly(fluorene-co-triphenylamine)forMultilayerPolymerLight-EmittingDiodes.JournalofPolymerScience:PartA:PolymerChemistry,2011,49,352-360.
One aspect of the present invention provides a kind of fluorenes-triphenylamine conjugated polymer electricity storage medium, it is characterized in that described conjugated polymer molecular structure is:
Wherein, R
1, R
2be the identical alkyl containing 1 to 16 carbon numbers or different alkyl, preferred R
1, R
2be the alkyl containing 4 to 14 carbon numbers, more preferably R
1, R
2be the alkyl containing 6 to 12 carbon numbers, most preferably R
1, R
2be the alkyl containing 8 to 10 carbon numbers.
Wherein, R
3for the electron donating group containing O, preferred R
3for methoxyl group, ethyoxyl, phenoxy group.
Wherein, n is the integer of 30 to 100, and n is preferably the integer of 50-80, is more preferably the integer of 60-70, or n is 30,35,40,45,50,55,60,65,70,75,80,85,90,95,100.
Further, R
1, R
2be straight chained alkyl or branched alkyl, preferred described R
1, R
2be n-octyl, n-heptyl, n-hexyl.
Further, described fluorenes-triphenylamine conjugated polymer molecular structure is:
Wherein, n is the integer of 30 to 100, and n is preferably the integer of 50-80, is more preferably the integer of 60-70, or n is 30,35,40,45,50,55,60,65,70,75,80,85,90,95,100.
Wherein, n is the integer of 30 to 100, and n is preferably the integer of 50-80, is more preferably the integer of 60-70, or n is 30,35,40,45,50,55,60,65,70,75,80,85,90,95,100.
Preferably, the molecular weight of fluorenes-triphenylamine conjugated polymer is 20000-60000, more elects 40000-50000 as
Another aspect provides the electrical storage device of a kind of fluorenes-triphenylamine conjugated polymer, be made up of substrate layer (1), cathode layer (2), organic layer (3) and top electrode layer (4), it is characterized in that: described organic layer is made up of aforesaid fluorenes-triphenylamine conjugated polymer.
Further, described substrate layer (1) is glass, and preferably, described cathode layer (2) is tin indium oxide (ITO), and more preferably, described top electrode layer (4) is metallic aluminium.
Further, described fluorenes-triphenylamine conjugated polymer is the P type organic semiconducting materials of transporting holes.
Third aspect of the present invention provides the purposes of aforesaid fluorenes-triphenylamine conjugated polymer as the semi-conducting material of electric memory device.
The present invention the 4th aspect provides the preparation method of aforesaid electrical storage device, and it comprises the steps:
One, by the substrate layer comprising cathode layer ultrasonic cleaning in organic reagent of well cutting, be then kept in organic reagent, preferably, described in comprise cathode layer substrate layer be ito glass;
Two, prepare fluorenes-triphenylamine conjugated polymer by Suzuki reaction, be dissolved in toluene and obtain the solution that concentration is 3 ~ 15mg/mL, preferably toluene solution concentration is 5 ~ 12mg/mL
Three, step 2 gained solution is dripped comprise on the substrate layer of cathode layer in step one well cutting, make it be uniformly dispersed by sol evenning machine, vacuumize removing organic reagent, obtains the thin polymer film that thickness is 20 ~ 100nm, preferably, thickness is 40 ~ 80nm;
Four, by vacuum vapour deposition, metal electrode Al is attached to polymer upper strata; Preferably, metal electrode thickness and area are respectively 200 ~ 400nm, 0.25 ~ 5mm
2, preferably, metal electrode thickness and area are respectively 250-350nm, 0.5 ~ 3mm
2;
Finally obtain the sandwich Organic Electricity memory device of Flash storage class.
Further, the organic solvent of the cleaning in step one is deionized water, absolute ethyl alcohol, acetone, absolute ethyl alcohol, deionized water, and preferably, the organic solvent that step one stores is absolute ethyl alcohol.
Memory device prepared by the present invention belongs to typical sandwich structure, has following characteristics: the preparation technology of memory device is simple, cost is low, is conducive to spreading in the middle of real life application; Wherein, be only-1.1V and-1.4V by the operating voltage of the electrical storage device of embodiment seven and embodiment eight gained, switch current ratio is respectively 1.8 × 10
4with 2.5 × 10
4, the error rate that the information that can effectively reduce is read in.
Accompanying drawing explanation
Fig. 1 is the structural representation of the Organic Electricity memory device that the present invention obtains;
Fig. 2 is the current-voltage characteristics curve of the Organic Electricity memory device that embodiment seven obtains;
Fig. 3 is the ON/OFF current ratio-voltage curve of the Organic Electricity memory device that embodiment seven obtains;
Fig. 4 is the current-voltage characteristics curve of the Organic Electricity memory device that embodiment eight obtains;
Fig. 5 is the ON/OFF current ratio-voltage curve of the Organic Electricity memory device that embodiment eight obtains.
Embodiment
Technical solution of the present invention is not limited to following citing embodiment, also comprises the combination in any between each embodiment.
Embodiment one: the preparation method of a kind of memory device based on fluorenes-triphenylamine conjugated polymer of present embodiment follows these steps to realize:
Step one, by ito glass ultrasonic cleaning in reagent a, be kept in absolute ethyl alcohol for subsequent use;
Step 2, fluorenes-triphenylamine conjugated polymer is dissolved in toluene, stirs and ultrasonic disperse (concentration is 3 ~ 15mg/mL);
Step 3, be spin-coated on uniformly on ito glass by polymer solution by sol evenning machine, vacuumize is except desolventizing; The thickness of polymer film is 20 ~ 100nm;
Step 4, the copper sheet with the homogeneous hole of size distribution is covered polymer surfaces, utilize the method for evaporation to be plated on polymer by top electrode Al.The thickness of top electrode Al is 200 ~ 400 nanometers; The area of top electrode Al is 0.25 ~ 5mm
2.
Embodiment two: present embodiment and embodiment one are deionized water, absolute ethyl alcohol, acetone, absolute ethyl alcohol, deionized water unlike the organic solvent a in step one.Other step and parameter identical with embodiment one.
Embodiment three: present embodiment and embodiment one or two are 5 ~ 12mg/mL unlike the toluene solution concentration of polyfluorene in step 2-triphenylamine copolymer.Other step and parameter identical with embodiment one or two.
Embodiment four: one of present embodiment and embodiment one to three are 40 ~ 80nm unlike the polymer film thickness described in step 3.Other step and parameter identical with one of embodiment one to three.
Embodiment five: one of present embodiment and embodiment one to four are 250 ~ 350nm unlike the thickness of the top electrode Al described in step 3.Other step and parameter identical with embodiment one to four.
Embodiment six: one of present embodiment and embodiment one to five are 0.5 ~ 3mm unlike the area of the top electrode Al described in step 3
2.Other steps and parameter identical with one of embodiment one to five.
Embodiment seven: by ito glass through deionized water, absolute ethyl alcohol, acetone, absolute ethyl alcohol, each 30min of deionized water ultrasonic cleaning, be kept in absolute ethyl alcohol for subsequent use; By fluorenes-be dissolved in toluene containing methoxyl group triphenylamine conjugated polymer, stir and ultrasonic disperse (concentration is 10mg/mL); Be spin-coated on uniformly on ito glass by polymer solution by sol evenning machine, vacuumize is except desolventizing.The thickness of polymer film is 50nm; The method of vacuum evaporation is utilized to be plated on polymer by top electrode Al.The thickness of top electrode Al is 300nm, and the area of top electrode Al is 1mm
2.Obtained device voltage-current characteristic curve and voltage-ON/OFF current ratio curve are as shown in Figure 2 and Figure 3.
Embodiment eight: by ito glass through deionized water, absolute ethyl alcohol, acetone, absolute ethyl alcohol, each 30min of deionized water ultrasonic cleaning, be kept in absolute ethyl alcohol for subsequent use; By fluorenes-be dissolved in toluene containing phenoxy group triphenylamine conjugated polymer, stir and ultrasonic disperse (concentration is 10mg/mL); Be spin-coated on uniformly on ito glass by polymer solution by sol evenning machine, vacuumize is except desolventizing.The thickness of polymer film is 50nm; The method of vacuum evaporation is utilized to be plated on polymer by top electrode Al.The thickness of top electrode Al is 300nm, and the area of top electrode Al is 1mm
2.Obtained device voltage-current characteristic curve and voltage-ON/OFF current ratio curve are as shown in Figure 4, Figure 5.
Based on the memory device of fluorenes-triphenylamine conjugated polymer structural representation as shown in Figure 1.As can be seen from the figure: the structure of memory device is simple, be conducive to being generalized in the middle of real life application.
Based on the current-voltage characteristics curve of the fluorenes described in embodiment seven-triphenylamine conjugated polymer electrical storage device and ON/OFF current ratio curve as shown in Figure 2,3.As can be seen from the figure: the operating voltage of memory device is low (being respectively-1.1V ,-1.4V), illustrate that the polymer in the present invention can be used for preparing low power memory part;
Based on the current-voltage characteristics curve of the fluorenes described in embodiment eight-triphenylamine conjugated polymer electrical storage device and ON/OFF current ratio-voltage curve as shown in Figure 4,5.As can be seen from the figure: the maximum switching current of memory device is higher (is respectively 1.8 × 10
4with 2.5 × 10
4), illustrate that memory device prepared by the present invention can control "ON", "Off" state accurately, and fault rate is lower.
Claims (10)
1. fluorenes-triphenylamine conjugated polymer electricity storage medium, is characterized in that described conjugated polymer molecular structure is:
Wherein, R
1, R
2be the identical alkyl containing 1 to 16 carbon numbers or different alkyl, preferred R
1, R
2be the alkyl containing 4 to 14 carbon numbers, more preferably R
1, R
2be the alkyl containing 6 to 12 carbon numbers, most preferably R
1, R
2be the alkyl containing 8 to 10 carbon numbers;
Wherein, R
3for the electron donating group containing O, preferred R
3for methoxyl group, ethyoxyl, phenoxy group;
Wherein, n is the integer of 30 to 100.
2. fluorenes according to claim 1-triphenylamine conjugated polymer electricity storage medium, is characterized in that R
1, R
2be straight chained alkyl or branched alkyl, preferred described R
1, R
2be n-octyl, n-hexyl, n-heptyl.
3. fluorenes according to claim 1-triphenylamine conjugated polymer electricity storage medium, is characterized in that described conjugated polymer molecular structure is:
Wherein, n is the integer of 30 to 100.
4. fluorenes according to claim 1-triphenylamine conjugated polymer electricity storage medium, is characterized in that described conjugated polymer molecular structure is:
Wherein, n is the integer of 30 to 100.
5. the electrical storage device of fluorenes-triphenylamine conjugated polymer, be made up of substrate layer (1), bottom electrode layer (2), organic layer (3) and top electrode layer (4), it is characterized in that: described organic layer is made up of the fluorenes described in any one of claim 1-4-triphenylamine conjugated polymer electricity storage medium.
6. electrical storage device according to claim 5, it is characterized in that described substrate layer (1) is glass, preferably, described bottom electrode layer (2) is tin indium oxide (ITO), more preferably, described top electrode layer (4) is metallic aluminium.
7. the electrical storage device according to any one of claim 5,6, is characterized in that described fluorenes-triphenylamine conjugated polymer is the P type organic semiconducting materials of transporting holes.
8. the preparation method of the electrical storage device according to any one of claim 5,6 and 7, it comprises the steps:
One, by the substrate layer comprising cathode layer ultrasonic cleaning in organic reagent of well cutting, be then kept in organic reagent, preferably, described in comprise cathode layer substrate layer be ito glass;
Two, prepare fluorenes-triphenylamine conjugated polymer by Suzuki reaction, be dissolved in toluene and obtain the solution that concentration is 3 ~ 15mg/mL, preferably toluene solution concentration is 5 ~ 12mg/mL
Three, step 2 gained solution is dripped comprise on the substrate layer of cathode layer in step one well cutting, make it be uniformly dispersed by sol evenning machine, vacuumize removing organic reagent, obtains the thin polymer film that thickness is 20 ~ 100nm, preferably, thickness is 40 ~ 80nm;
Four, by vacuum vapour deposition, metal electrode Al is attached to polymer upper strata; Preferably, metal electrode thickness and area are respectively 200 ~ 400nm, 0.25 ~ 5mm
2, preferably, metal electrode thickness and area are respectively 250-350nm, 0.5 ~ 3mm
2;
Finally obtain the sandwich Organic Electricity memory device of Flash storage class.
9. preparation method according to claim 8, is characterized in that the organic solvent of the cleaning in step one is deionized water, absolute ethyl alcohol, acetone, absolute ethyl alcohol, deionized water, and preferably, the organic solvent that step one stores is absolute ethyl alcohol.
10. the fluorenes according to claim 1-4-triphenylamine conjugated polymer is as the purposes of the semi-conducting material of electric memory device.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037441A (en) * | 2018-08-01 | 2018-12-18 | 苏州大学 | Semi-conductor electricity storage material and preparation method thereof and flexible electrical storage device prepared therefrom and preparation method |
| CN111349217A (en) * | 2020-04-23 | 2020-06-30 | 黑龙江大学 | Terpolymer and preparation method of electric storage device thereof |
| CN111925506A (en) * | 2020-07-10 | 2020-11-13 | 华南理工大学 | Triphenylamine-fluorene-benzimidazole low-band-gap terpolymer, electric storage device and preparation of electric storage device |
| CN111944125A (en) * | 2020-07-10 | 2020-11-17 | 华南理工大学 | Terpolymer containing triphenylamine donor group with alkoxy, electric storage device and preparation thereof |
| CN113549196A (en) * | 2020-04-23 | 2021-10-26 | 黑龙江大学 | Fluorenyl conjugated polymer and preparation method of electric storage device thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219464A (en) * | 2013-04-28 | 2013-07-24 | 桂林电子科技大学 | Methyl methacrylate (MMA) / bismaleimide (BMI) copolymer organic resistive random access memory and preparation method thereof |
| CN103219466A (en) * | 2013-04-28 | 2013-07-24 | 桂林电子科技大学 | Organic resistive random access memory and preparation method thereof |
| CN103396533A (en) * | 2013-08-14 | 2013-11-20 | 黑龙江大学 | Methoxytriphenylamine-fluorene-containing copolymer, and preparation method and application thereof |
| US20140145139A1 (en) * | 2011-07-13 | 2014-05-29 | Ru Huang | Transparent flexible resistive memory and fabrication method thereof |
-
2015
- 2015-08-10 CN CN201510486822.XA patent/CN105070830B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140145139A1 (en) * | 2011-07-13 | 2014-05-29 | Ru Huang | Transparent flexible resistive memory and fabrication method thereof |
| CN103219464A (en) * | 2013-04-28 | 2013-07-24 | 桂林电子科技大学 | Methyl methacrylate (MMA) / bismaleimide (BMI) copolymer organic resistive random access memory and preparation method thereof |
| CN103219466A (en) * | 2013-04-28 | 2013-07-24 | 桂林电子科技大学 | Organic resistive random access memory and preparation method thereof |
| CN103396533A (en) * | 2013-08-14 | 2013-11-20 | 黑龙江大学 | Methoxytriphenylamine-fluorene-containing copolymer, and preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| YONG-GI KO等: "Digital Memory Versatility of Fully π‑Conjugated Donor−Acceptor Hybrid Polymers", 《ACS APPLIED MARERIALS & INTERFACES》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037441A (en) * | 2018-08-01 | 2018-12-18 | 苏州大学 | Semi-conductor electricity storage material and preparation method thereof and flexible electrical storage device prepared therefrom and preparation method |
| CN109037441B (en) * | 2018-08-01 | 2022-06-21 | 苏州大学 | Semiconductor electric storage material, flexible electric storage device prepared from semiconductor electric storage material and preparation method of flexible electric storage device |
| CN111349217A (en) * | 2020-04-23 | 2020-06-30 | 黑龙江大学 | Terpolymer and preparation method of electric storage device thereof |
| CN113549196A (en) * | 2020-04-23 | 2021-10-26 | 黑龙江大学 | Fluorenyl conjugated polymer and preparation method of electric storage device thereof |
| CN111925506A (en) * | 2020-07-10 | 2020-11-13 | 华南理工大学 | Triphenylamine-fluorene-benzimidazole low-band-gap terpolymer, electric storage device and preparation of electric storage device |
| CN111944125A (en) * | 2020-07-10 | 2020-11-17 | 华南理工大学 | Terpolymer containing triphenylamine donor group with alkoxy, electric storage device and preparation thereof |
| CN111925506B (en) * | 2020-07-10 | 2022-06-28 | 华南理工大学 | Triphenylamine-fluorene-benzimidazole low-band-gap terpolymer, electric storage device and preparation of electric storage device |
| CN111944125B (en) * | 2020-07-10 | 2022-07-26 | 华南理工大学 | Terpolymer of triphenylamine donor group containing alkoxy, electric memory device and preparation thereof |
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