CN110534641A - A kind of stretchable memristor and the preparation method and application thereof based on elastomeric polymer as active layer - Google Patents

Abstract

The invention discloses a stretchable memristor based on an elastic polymer as an active layer and a preparation method and application thereof. It consists of a supporting layer film, a bottom electrode, an active layer film and a top electrode connected in sequence from bottom to top; the material of the active layer film is a high elastic polymer doped with silver nanoparticles. The preparation method thereof includes the following steps: respectively preparing a top electrode and a bottom electrode on a surface-modified substrate; coating an active layer film on the surface of the top electrode; coating a supporting layer film on the surface of the bottom electrode; Peel off from the substrate, and then treat the surface of the bottom electrode and the surface of the active layer film respectively to form hydroxyl groups; align and heat the surface of the hydroxylated bottom electrode and the surface of the active layer film, and then connect to form a whole, remove the substrate At the bottom, the stretchable memristor is obtained. The preparation method of the invention is simple, the cost is low, and the invention has excellent flexibility, and can be well attached to objects of various shapes.

Description

A stretchable memristor based on elastic polymer as active layer and preparation method thereof Law and Application

technical field

The invention relates to a stretchable memristor based on an elastic polymer as an active layer, a preparation method and application thereof, and belongs to the fields of microelectronics, material science, information science and the like.

Background technique

A synapse is the smallest unit of learning and memory in an organism's brain. Its bionic simulation is the top priority of research on artificial neural network. In traditional circuits, the simulation of a single neural synapse requires dozens of transistors and capacitors to combine. This design is relatively complex, and the power consumption is relatively high, making it difficult to obtain a high-density neural network. Therefore, different materials and device structures need to be explored to meet the latest requirements of neural synapse simulation.

It has been found that memristors can simulate the behavior of a single "synapse". The memristor's resistance can be continuously changed by applying an electrical bias across the memristor, much like the continuous modulation of synaptic weights (the strength and magnitude of connections between pre- and post-synaptic nodes). Moreover, as shown in Figure 1, memristors are very similar in structure to biological synapses. In addition to this, memristors simulate neural synapses, which can greatly improve simulation efficiency and reduce simulation power consumption, and have good application prospects. Previously reported memristors have achieved different functional simulations of neural synapses, including enhancement and inhibition of synaptic weights, frequency-dependent plasticity (SRDP), firing time-dependent plasticity (STDP), long-term/short-term plasticity (LTP/STP) ) and non-associative/associative memory etc.

However, the materials used to simulate neural synapses in most reports are brittle and hard inorganic materials, such as metal oxides (WO _x , SiO ₂ , InGaZnO), chalcogenides (Cu ₂ S, Ag ₂ S) ) and some phase change materials (Ge ₂ Sb ₂ Te ₅ , FeO _X ) and so on. The mechanical flexibility of these materials is poor. Therefore, it is not possible to apply to flexible electronics, especially for wearable devices. It is well known that organic materials have the advantages of high elasticity, biocompatibility, simple film-forming process, and low cost compared with inorganic materials. Recently, some research groups have used organic materials such as PEDOT:PSS, PFD ₈ CN, EV(ClO ₄ ) ₂ /BTPA-F and chitosan to simulate neural synapses, and have achieved success. But so far, the entire reports on memristors have mostly focused on rigid and flexible devices, and overall stretchable memristors have not yet been realized. This leaves AI systems unable to meet the demands of the rapidly growing wearable electronics market. However, there are two main reasons why the entire memristor is not stretchable: (1) the material has poor ductility and lacks highly elastic materials; (2) there is a lack of corresponding fine processes for fabricating stretchable memristors.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a stretchable memristor based on an elastic polymer as an active layer and a preparation method and application thereof. The preparation method of the present invention is simple and low in cost, and the obtained stretchable memristor has excellent flexibility It has good properties and can be well attached to objects of various shapes.

The stretchable memristor provided by the present invention is formed by connecting a supporting layer film, a bottom electrode, an active layer film and a top electrode in sequence from bottom to top;

The material of the active layer film is a high elastic polymer doped with silver nanoparticles.

In the above-mentioned stretchable memristor, the highly elastic polymer is thermoplastic polyurethane and/or polydimethylsiloxane;

The support layer material is polydimethylsiloxane.

In the above stretchable memristor, the thickness of the top electrode may be 20-100 nm, specifically 30 nm, 25-35 nm, 30-100 nm or 25-90 nm;

The thickness of the bottom electrode may be 20-100 nm, specifically 30 nm, 30-100 nm, 20-30 nm or 20-50 nm;

The top electrode is provided with patterning; the bottom electrode is not patterned;

The pattern size of the top electrode may be 50-500 μm, specifically a circular pattern of 300 μm, 300-500 μm, 50-300 μm or 100-400 μm, and the pattern spacing may specifically be 600 μm, 500-800 μm or 100-900 μm;

The present invention also provides a method for preparing a stretchable memristor based on an elastic polymer as an active layer, comprising the following steps:

1) Connect octadecyltrichlorosilane on the surface of the substrate;

2) On the substrate modified in step 1), a patterned top electrode and a non-patterned bottom electrode are prepared respectively by means of an evaporation mask and an unmasked method;

3) spin-coating the active layer solution on the surface of the top electrode obtained in step 2), and curing it to obtain an active layer film;

4) spin-coating the support layer solution on the surface of the bottom electrode obtained in step 2), and solidify to obtain a support layer film;

5) The supporting layer film obtained in step 4) is peeled off from the substrate together with the bottom electrode as a whole, and then on the surface of the bottom electrode, the film coated on the top electrode in step 3) is removed. The surface of the active layer film is separately treated with oxygen plasma, that is, hydroxyl groups are formed on the surface;

6) Align and heat the surface of the hydroxylated bottom electrode described in step 5) with the surface of the active layer film, then the support layer film, the bottom electrode, the active layer film and the top electrode The connection is made to form a whole, and then the whole is peeled off from the substrate of the top electrode to obtain a stretchable memristor.

In the above preparation method, the substrate is silicon or glass;

Step 1) of the method further includes the step of cleaning the substrate; the substrate is washed with water and acetone washing solution in sequence, and then blown dry with nitrogen gas.

In the present invention, the water may specifically be secondary deionized water.

In the above-mentioned preparation method, step 1) the method of connecting octadecyltrichlorosilane on the surface of the substrate is as follows: the substrate is placed in a piranha lotion (volume ratio of 7:3 of concentrated sulfuric acid and peroxide). The substrate was soaked in a mixed solution of hydrogen), then the substrate was taken out, and then washed with water; and then the substrate was placed in a mixed solution with a volume ratio of n-heptane and octadecyltrichlorosilane of 1000:1, Then, the surface of the substrate is connected to the octadecyltrichlorosilane (ie, the substrate modified by OTS).

In the above-mentioned preparation method, the method for evaporating the mask is a vacuum mask evaporating method;

The specific conditions of the vacuum mask evaporation method are as follows: the vacuum degree can be ^{10-6 to 0-7} torr, specifically ^10-6 torr, and the evaporation rate can be 0.01-0.05nm/s, specifically 0.01 nm/s, and the vapor-deposited material is gold.

In the above preparation method, the material of the active layer film is a high elastic polymer doped with silver nanoparticles; the high elastic polymer is specifically thermoplastic polyurethane (TPU for short) and/or polydimethylsiloxane ( referred to as PDMS);

The method for spin-coating the active layer film includes the following steps: dropping the high-elastic polymer solution doped with silver nanoparticles onto the surface of the top electrode placed on the turntable of the glue spinner; The rotating speed of the machine is set at 4000~8000r/s, and the spin coating time can be 20~50s;

The supporting layer material is polydimethylsiloxane (PDMS for short);

The method for spin coating a support layer includes the following steps: dropping the polydimethylsiloxane onto the surface of the bottom electrode placed on the turntable of the glue spinner, and then setting the rotational speed of the glue spinner at 1000-4000r /s, the spin coating time can be 20-60s.

In the above preparation method, the conditions of the oxygen plasma treatment are as follows: the power can be 70W～120W, specifically 100W, the time can be 0.5～2min, specifically 1min, the gas flow rate can be 5～10sccm, specifically is 8sccm.

In the above preparation method, the heating temperature in step 6) may be 80°C to 120°C, specifically 100°C, and the time may be 2min to 10min, specifically 3min.

In the present invention, during the transfer process in step 6), it is necessary to ensure that the bottom electrode and the active layer film are strictly parallel and that the planar device avoids wrinkles as much as possible.

The present invention also provides the stretchable memristor prepared by the above-mentioned preparation method.

The stretchable memristor of the present invention is used in the field of preparing portable and/or wearable intelligent microelectronic products.

The present invention has the following advantages:

1. In the present invention, the stretchable high elastic polymer doped with silver nanoparticles is used as the active layer of the memristor, and the elastic material PDMS is used as the support layer of the memristor to prepare the device. This can ensure that the new device has excellent flexibility;

2. The present invention adopts the method of solution spin coating instead of the traditional evaporation method to prepare the active layer, and the preparation method is simple.

3. The present invention adopts advanced technologies such as lamination and peeling, which can be operated at room temperature, and the active layer of high-elasticity polymer is not damaged by thermal radiation; it has the advantages of simple manufacturing process and low cost, and the product has the advantages of light weight, flexibility, and flexibility. Stretching and other characteristics, and the size is small, which is conducive to integration. It has broad development prospects and application potential in many fields such as portable, wearable and intelligent microelectronic products.

Description of drawings

Figure 1 shows a structural analogy between a memristor and a typical biological synapse.

Figure 2 shows a fabrication scheme for a stretchable memristor.

Figure 3 is the corresponding nonlinear electrical characteristics of the memristor in Example 1 of the present invention; Figure 3(a) I-V characteristics of the device during 5 consecutive negative scans and 5 positive scans; Figure 3(b) According to the applied voltage, the response current of the device over time (I-t characteristic).

FIG. 4 shows the synaptic simulation performance of the memristor of Example 1 of the present invention under different tensile strains.

Figure 5 shows the nonlinear electrical characteristics of the memristor of Example 2 of the present invention; Figure 5(a) I-V characteristics of the device during 6 consecutive positive scans and 6 consecutive negative scans; Figure 5(b) According to the applied voltage, response current of the device over time (I-t characteristic); Fig. 5(c) Synaptic analog performance of the memristor.

Figure 6 is the nonlinear electrical characteristics of the memristor in Example 3 of the present invention; Figure 6(a) I-V characteristics of the device during 4 consecutive positive scans and 4 consecutive negative scans; Figure 6(b) According to the applied voltage, Response current of the device over time (I-t characteristic).

Fig. 7 is the nonlinear electrical characteristics of the memristor in Example 4 of the present invention; Fig. 7(a) The response current (I-t characteristic) of the device over time according to the applied voltage; Fig. 7(b) The synaptic simulation performance of the memristor .

Detailed ways

The experimental methods used in the following examples are conventional methods unless otherwise specified.

The materials, reagents, etc. used in the following examples can be obtained from commercial sources unless otherwise specified.

Example 1. Preparation of organic memristor based on highly elastic polymer

1. Octadecyltrichlorosilane (OTS) modifies the silicon surface of the substrate. The specific steps are as follows: (1) The cut silicon wafer is placed in secondary deionized water and acetone washing solution for cleaning, and then blowing with nitrogen. (2) Hydroxylation of silicon wafers: the silicon wafers processed in step (1) are placed in piranha lotion (a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 7:3, specifically 35 mL of concentrated sulfuric acid) (mixed with 15 mL of hydrogen peroxide) for 0.5 h, then take out the silicon wafer and rinse the substrate with secondary deionized water; (3) OTS modification of the silicon wafer: place the substrate in n-heptane and octadecyl Trichlorosilane (OTS for short) was soaked in a mixed solution with a volume ratio of 1000:1 (specifically, 80 mL of n-heptane and 80 μL of OTS) for 1 hour, and finally rinsed with chloroform, ultrasonicated, and dried with nitrogen to obtain OTS Modified substrate.

2. The top electrode and the bottom electrode were prepared on the OTS modified substrate by vacuum evaporation mask and maskless method, respectively.

The specific conditions of vacuum mask evaporation are as follows: the degree of vacuum is 10 ^-6 torr, the evaporation rate is 0.01 nm/s, and the specific material for evaporation is gold.

The thickness of the vapor-deposited bottom electrode was 30 nm, and the thickness of the top electrode was 30 nm.

The mask pattern of the top electrode is a circle with a diameter of 300 μm and a center-to-center spacing of 600 μm. The evaporation method is specifically a mask evaporation method,

3. Spin-coat the active layer (thermoplastic polyurethane TPU doped with silver nanoparticles) on the top electrode and cure: configure a TPU solution with a mass fraction of 30 wt% (the solvent is tetrahydrofuran), and stir for 12 hours; : Ag NPs solution, volume ratio) to configure TPU: Ag NPs solution, stirring for 6 h; spin coating a layer of TPU: Ag NPs solution on the surface of the patterned top electrode (the speed of the glue spinner is set to 5000r/s, spin coating time is 40s). Then put it in an oven at 100°C for heating and curing for 1 h.

4. Spin-coat the support layer (polydimethylsiloxane PDMS) on the bottom electrode and cure:

Prepare the PDMS solution in a ratio of 10:1 (PDMS: curing agent, volume ratio), stir and let stand for 2 hours; spin a layer of PDMS solution on the surface of the unpatterned bottom electrode (the speed of the glue spinner is set at 2000r/s) , the spin coating time is 60s). Then put it in an oven at 70°C for heating and curing for 30min.

5. Oxygen plasma treatment of the bottom/top electrode surface: using the supporting layer film obtained in step (4) to peel off the bottom electrode as a whole from the bottom electrode substrate, and then removing the bottom electrode and the active layer obtained in step (3) The films were simultaneously treated in oxygen plasma for 60 s to hydroxylate their surfaces.

6. The positive bottom electrode and the top electrode are heated: the hydroxylated bottom electrode obtained in step (5) is laminated on the hydroxylated active layer film, and then the aligned whole is placed in an oven (temperature : 100 °C) for 3 min, the purpose is to form an irreversible bond between the bottom electrode and the surface of the active layer film, making it tightly connected, so far, the supporting layer (PDMS), bottom electrode, active layer (TPU: Ag NPs) and the top electrode are connected form a whole.

7. Use the support layer film obtained in step (4) to peel off the entire device from the top electrode substrate: use the bottom electrode with thicker PDMS to transfer the top electrode with the active layer (TPU: Ag NPs) as a whole Then, the whole is turned over, which results in a stretchable memristor based on a highly elastic polymer as the active layer.

FIG. 3 shows the corresponding nonlinear electrical characteristics of the memristor of the present invention. (a) I-V characteristics of the device during 5 consecutive negative scans and 5 positive scans. (b) Response current (I-t characteristic) of the device over time according to the applied voltage.

Figure 4 shows the synaptic-mimicking performance of Au/TPU:Ag NPs/Au memristors under different tensile strains.

The above results show that the highly elastic polymer organic memristor of the present invention still has a memristive phenomenon under tensile strain.

Example 2. Preparation of organic memristor based on highly elastic polymer

1. Clean the ITO surface of the bottom electrode: first remove the protective layer on the ITO with tweezers; then put the ITO in the acetone lotion for 15min ultrasonic; put the ITO in the ethanol lotion again for 15min; finally put the ITO in the second time Sonicate in deionized water for 15 min.

2. Spin-coat the active layer (thermoplastic polyurethane TPU:Ag NPs doped with silver nanoparticles) on the cleaned ITO surface and cure: configure a TPU solution with a mass fraction of 30wt% (the solvent is tetrahydrofuran), and stir for 12h; The ratio of TPU:AgNPs solution: 1 (TPU:AgNPs solution, volume ratio) was configured with TPU:AgNPs solution, stirred for 6h; a layer of TPU:AgNPs solution was spin-coated on the surface of the patterned top electrode (the speed of the spinner was set at 5000r/s , the spin coating time is 40s). Then put it in an oven at 100°C for heating and curing for 1 h.

3. Evaporating the top electrode on the active layer (TPU:Ag NPs) film obtained in step (2) by using a vacuum evaporation mask method:

The specific conditions of vacuum mask evaporation are as follows: the degree of vacuum is 10 ^-6 torr, the evaporation rate is 0.01 nm/s, the thickness of the evaporation top electrode is 30 nm, and the specific material for evaporation is gold.

The mask pattern of the top electrode is a circle with a diameter of 300 μm and a center-to-center spacing of 600 μm.

So far, the memristor based on the high elastic polymer as the active layer is obtained.

Figure 5 shows the nonlinear electrical properties of the Au/TPU:Ag NPs/ITO memristor prepared above. (a) I-V characteristics of the device during 6 consecutive positive scans and 6 negative scans. (b) Response current (I-t characteristic) of the device over time according to the applied voltage. (c) Synaptic simulation performance of the memristor.

The above results show that the modified bottom electrode material of the highly elastic polymer organic memristor of the present invention still has a memristive phenomenon.

Example 3. Preparation of organic memristor based on highly elastic polymer

1. Octadecyltrichlorosilane (OTS) is used to modify the silicon surface of the substrate, and the specific steps are as follows: 1. Place the cut silicon wafer in secondary deionized water and acetone washing solution for cleaning, and then dry it with nitrogen gas; ②Hydroxylation of silicon wafers: Soak the silicon wafers treated in step ① in piranha lotion (a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 7:3) for 0.5 h, and then take out the silicon wafers. And rinse the substrate with secondary deionized water; 3. OTS modification of the silicon wafer: place the substrate in a mixed solution of n-heptane and octadecyltrichlorosilane with a volume ratio of 1000:1, and finally use chloroform After rinsing and sonication, and drying with nitrogen, the OTS-modified substrate was obtained.

2. The bottom electrode is prepared by vacuum evaporation on the OTS modified substrate: the specific conditions of the vacuum mask evaporation are as follows: the vacuum degree is 10 ^-6 torr, the evaporation rate is specifically 0.01nm/s, the evaporation The thickness of the bottom electrode is 30 nm, and the specific material of evaporation is gold.

3. Spin-coat the support layer (polydimethylsiloxane PDMS) on the bottom electrode and cure:

Prepare the PDMS solution in a ratio of 10:1 (PDMS: curing agent, volume ratio), stir and let stand for 2 hours; spin a layer of PDMS solution on the surface of the unpatterned bottom electrode (the speed of the glue spinner is set at 2000r/s) , the spin coating time is 60s). Then put it in an oven at 70°C for heating and curing for 30min.

4. First, use the support layer film obtained in step (3) to peel off the entire bottom electrode from the bottom electrode substrate.

5. Spin-coating the active layer (thermoplastic polyurethane TPU:Ag NPs doped with silver nanoparticles) on the surface of the bottom electrode obtained in step (4) and curing: configure TPU with a mass fraction of 30wt% (solvent is tetrahydrofuran) The solution was stirred for 12h; the TPU:Ag NPs solution was configured in a ratio of 16:1 (TPU:Ag NPs solution, volume ratio), and stirred for 6h; a layer of TPU:Ag NPs solution was spin-coated on the surface of the patterned top electrode (smoothing The rotating speed of the machine is set at 5000r/s, and the spin coating time is 40s). Then put it in an oven at 100°C for heating and curing for 1 h.

6. A top electrode is prepared on the surface of the active layer obtained in step (5) by using a vacuum evaporation mask method.

The specific conditions of vacuum mask evaporation are as follows: the degree of vacuum is 10 ^-6 torr, the evaporation rate is 0.01 nm/s, the thickness of the top electrode is 30 nm, and the specific material for evaporation is aluminum.

The mask pattern of the top electrode is a circle with a diameter of 300 μm and a center-to-center spacing of 600 μm.

So far, the memristor based on the high elastic polymer as the active layer of the present invention is obtained.

Figure 6 shows the nonlinear electrical properties of the Al/TPU:Ag NPs/ITO memristor. (a) I-V characteristics of the device during 4 consecutive positive scans and 4 negative scans. (b) Response current (I-t characteristic) of the device over time according to the applied voltage. The above results show that the modified top electrode material of the highly elastic polymer organic memristor of the present invention still has a memristive phenomenon.

Example 4. Preparation of organic memristor based on highly elastic polymer

1. Clean the ITO surface of the bottom electrode: first remove the protective layer on the ITO with tweezers; then put the ITO in the acetone lotion for 15min ultrasonic; put the ITO in the ethanol lotion again for 15min; finally put the ITO in the second time Sonicate in deionized water for 15 min.

2. Spin-coat the active layer (polydimethylsiloxane PDMS doped with silver nanoparticles: AgNPs) on the cleaned ITO surface and cure: configure the PDMS solution in the ratio of 10:1 (PDMS:curing agent, volume ratio) , stir and let stand for 2h; configure PDMS diluent solution in a ratio of 1:6 (PDMS solution: Dow Corning OS20 diluent, volume ratio), stir for 12h; use 20:1 (PDMS diluent solution: Ag NPs solution, volume ratio) The PDMS:Ag NPs solution was proportionally configured and stirred for 12h; a layer of PDMS:Ag NPs solution was spin-coated on the surface of the patterned top electrode (the speed of the spinner was set at 5000r/s, and the spin-coating time was 40s). Then put it in an oven at 70°C for heating and curing for 1h.

3. The top electrode is evaporated on the active layer (PDMS:Ag NPs) film obtained in step (2) by using a vacuum evaporation mask method: the specific conditions of the vacuum mask evaporation are as follows: the degree of vacuum is 10 ^-6 -10 ^-7 torr (specifically 10 ^-6 torr), the evaporation rate is 0.01 nm/s, the thickness of the evaporation top electrode is 30 nm, and the specific material for evaporation is gold.

The mask pattern of the top electrode is a circle with a diameter of 300 μm and a center-to-center spacing of 600 μm.

So far, the memristor based on the high elastic polymer as the active layer is obtained.

Figure 7 shows the nonlinear electrical properties of the Au/PDMS:Ag NPs/ITO memristor prepared above. (a) Response current (I-t characteristic) of the device over time according to the applied voltage. (b) Synaptic simulation performance of the memristor.

The above results show that the preparation method of the memristor based on the high elastic polymer as the active layer of the present invention can be applied to a variety of high elastic polymer materials, and the stretchable memristor can be prepared.

Claims (10)

1. A stretchable memristor, characterized in that: it is formed by connecting a supporting layer film, a bottom electrode, an active layer film and a top electrode sequentially from bottom to top; The material of the active layer film is a high elastic polymer doped with silver nanoparticles. 2. The stretchable memristor according to claim 1, wherein the high elastic polymer is thermoplastic polyurethane and/or polydimethylsiloxane; The support layer material is polydimethylsiloxane. 3. The stretchable memristor according to claim 1 or 2, wherein the top electrode has a thickness of 20-100 nm; The thickness of the bottom electrode is 20-100 nm; The top electrode is provided with patterning; the bottom electrode is not patterned; The pattern size of the top electrode is 50-500 μm. 4. The preparation method of the stretchable memristor according to any one of claims 1-3, comprising the steps of: 1) Connect octadecyltrichlorosilane on the surface of the substrate; 2) On the substrate modified in step 1), a patterned top electrode and a non-patterned bottom electrode are prepared respectively by means of an evaporation mask and an unmasked method; 3) spin-coating the active layer solution on the surface of the top electrode obtained in step 2), and curing it to obtain an active layer film; 4) spin-coating the support layer solution on the surface of the bottom electrode obtained in step 2), and solidify to obtain a support layer film; 5) The supporting layer film obtained in step 4) is peeled off from the substrate together with the bottom electrode as a whole, and then on the surface of the bottom electrode, the film coated on the top electrode in step 3) is removed. The surface of the active layer film is separately treated with oxygen plasma, that is, hydroxyl groups are formed on the surface; 6) Align and heat the surface of the hydroxylated bottom electrode described in step 5) with the surface of the active layer film, then the support layer film, the bottom electrode, the active layer film and the top electrode The connection is made to form a whole, and then the whole is peeled off from the substrate of the top electrode to obtain a stretchable memristor. 5. The preparation method according to claim 4, wherein the substrate is silicon or glass; Step 1) of the method further includes the step of cleaning the substrate; the substrate is washed with water and acetone washing solution in sequence, and then blown dry with nitrogen gas. 6. The preparation method according to claim 4 or 5, wherein in step 1) the method for connecting octadecyltrichlorosilane on the surface of the substrate is as follows: placing the substrate in a piranha lotion soaking, then taking out the substrate, and then washing with water; then placing the substrate in a mixed solution with a volume ratio of n-heptane and octadecyltrichlorosilane of 1000:1 to obtain the substrate The surface of the octadecyltrichlorosilane is attached. 7. The preparation method according to any one of claims 4-6, wherein: the method for evaporating a mask is a vacuum mask evaporating method; The conditions of the vacuum mask evaporation method are as follows: the degree of vacuum is 10 ^-6 to 0 ^-7 torr, the evaporation rate is 0.01 to 0.05 nm/s, and the material to be evaporated is gold. 8. The preparation method according to any one of claims 4-7, characterized in that: the method for spin-coating the active layer film comprises the following steps: adding the highly elastic polymer solution doped with silver nanoparticles drop onto the surface of the top electrode placed on the turntable of the glue spinner, then set the speed of the glue spinner to 4000-8000r/s, and the spin coating time is 20-50s; The method for spin coating a support layer includes the following steps: dropping the polydimethylsiloxane onto the surface of the bottom electrode placed on the turntable of the glue spinner, and then setting the rotational speed of the glue spinner at 1000-4000r /s, the spin coating time is 20-60s. 9. The preparation method according to any one of claims 4-8, wherein the conditions of the oxygen plasma treatment are as follows: the power is 70W～120W, the time is 0.5～2min, and the gas flow rate is 5～10sccm ; The heating temperature in step 6) is 80°C to 120°C, and the time is 2 min to 10 min. 10. Application of the stretchable memristor according to any one of claims 1 to 3 in the field of manufacturing portable and/or wearable intelligent microelectronic products.