CN110534641A - A kind of stretchable memristor and the preparation method and application thereof based on elastomeric polymer as active layer - Google Patents
A kind of stretchable memristor and the preparation method and application thereof based on elastomeric polymer as active layer Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The stretchable memristor and the preparation method and application thereof that the invention discloses a kind of based on elastomeric polymer as active layer.It successively includes that support layer film, hearth electrode, active layer film and top electrode are formed by connecting from the bottom to top；The material of the activity layer film is the strong flexible polymer for adulterating Nano silver grain.Its preparation method, includes the following steps: on the substrate of surface modification, prepares top electrode, hearth electrode respectively；Active layer film is coated on top electrode surface；The coating support layer film on hearth electrode surface；Hearth electrode is removed from substrate, then in the surface of hearth electrode, active layer film surface, processing forms hydroxyl respectively；The surface of hydroxylated hearth electrode and active layer film surface be then connected to form a whole to just and heating, remove substrate to get stretchable memristor is arrived.Preparation method of the present invention is simple, low in cost, has excellent flexibility, and can be good at being attached on object of various shapes.
Description
Technical field
The present invention relates to a kind of stretchable memristor based on elastomeric polymer as active layer and preparation method thereof with answer
With belonging to the ambits such as microelectronics, materialogy and information science.
Background technique
Nerve synapse is the minimum unit of organism brain learning and memory.Its human simulation is research artificial neural network
The most important thing.And in traditional circuit, the simulation of single nerve synapse needs tens transistors and capacitor to be combined, this
Kind design is complex, and power consumption is relatively high, it is difficult to obtain highdensity neural network.It is different therefore, it is necessary to explore
Material and device architecture are to adapt to the latest requirement that nerve synapse is simulated.
It has been investigated that memristor may be implemented to simulate the function of single " cynapse " behavior.By applying on memristor
The method of electrical bias can continuously change the resistance of memristor, this and the synapse weight (intensity contacted between presynaptic posterior nodal point
And amplitude) continuous modulation characteristic it is closely similar.Moreover, as shown in Figure 1, the structure of memristor and biological synapse is very alike.
Except this position, memristor analog neuron cynapse can greatly improve simulation precision, reduce analog power consumption, have application well
Prospect.The memristor reported before have been realized in enhancing to the simulation of the different function of nerve synapse, including synapse weight and
Inhibit, frequency relies on plasticity (SRDP), and discharge time relies on plasticity (STDP), long-term/short-term plasticity (LTP/STP) and
Non- association/associative memory etc..
However, the material in most of reports for analog neuron cynapse is inorganic material frangible, that hardness is big, such as metal
Oxide (WOx, SiO2, InGaZnO), chalcogenide (Cu2S, Ag2) and some phase-change material (Ge S2Sb2Te5, FeOX)
Deng.The mechanical flexibility of these materials is very poor.Therefore, it is not possible to be suitable for flexible electronic device, set especially for wearable
It is standby.It is well known that organic material has high resiliency, and biocompatibility, film-forming process is simple compared with inorganic material, low cost
The advantages that.Although nearest some research groups utilize PEDOT:PSS, PFD8CN, EV (ClO4)2/ BTPA-F and chitosan etc. are organic
Material simulation nerve synapse, and achieve success.But up to now, entirely about the report of memristor, have focused largely on hard
In matter and flexible device, whole stretchable memristor is not yet implemented.This makes artificial intelligence system be unable to satisfy rapid increasing
The demand in long wearable electronic market.However, the main reason for entirely memristor is non-stretchable has following two points: (1) material
Ductility is very poor, lacks elastomeric material；(2) lack the corresponding hand work for making stretchable memristor.
Summary of the invention
The object of the present invention is to provide a kind of based on elastomeric polymer as the stretchable memristor of active layer and its preparation
Method and application, preparation method of the present invention is simple, low in cost, and obtained stretchable memristor has excellent flexibility, and
And it can be good at being attached on object of various shapes.
Stretchable memristor provided by the invention, it successively includes supporting layer film, hearth electrode, active layer thin from the bottom to top
Film and top electrode are formed by connecting；
The material of the activity layer film is the strong flexible polymer for adulterating Nano silver grain.
Above-mentioned stretchable memristor, the strong flexible polymer are thermoplastic polyurethane and/or dimethyl silicone polymer；
The support layer material is dimethyl silicone polymer.
Above-mentioned stretchable memristor, the thickness of the top electrode can be 20~100nm, concretely 30nm, 25~
35nm, 30~100nm or 25~90nm；
The thickness of the hearth electrode can be 20~100nm, concretely 30nm, 30~100nm, 20~30nm or 20~
50nm；
The top electrode is equipped with patterning；Pattern-free on the hearth electrode；
The pattern dimension of the top electrode can be 50~500 μm, concretely 300 μm, 300~500 μm, 50~300 μm
Or 100~400 μm of circular pattern, concretely 600 μm, 500~800 μm or 100~900 μm of pattern spacing；.
The present invention also provides a kind of preparation method of stretchable memristor based on elastomeric polymer as active layer, packets
Include following steps:
1) octadecyl trichlorosilane alkane is connected on the surface of substrate；
2) it on the substrate after step 1) modification, is prepared respectively using deposition mask and the not method of exposure mask patterned
The hearth electrode of top electrode and pattern-free；
3) the spin coating active layer solution on the top electrode surface that step 2) obtains, and solidified, obtain active layer
Film；
4) the spin coating supporting layer solution on the hearth electrode surface that step 2) obtains, and solidified, be supported layer
Film；
5) the related hearth electrode entirety of the support layer film that step 4) obtains is removed from the substrate, then
The surface of the hearth electrode, step 3) the active layer film surface coated on the top electrode carry out respectively oxygen etc. from
Daughter processing forms hydroxyl on surface；
6) surface of hydroxylated hearth electrode described in step 5) and active layer film surface are carried out to just and heating, then
The support layer film, the hearth electrode, the active layer film and the top electrode are connected to form a whole, then will
It is whole to be removed from the substrate of the top electrode to get to stretchable memristor.
In above-mentioned preparation method, the substrate is silicon or glass；
Further include the steps that cleaning the substrate in the step 1) of the method；The substrate successively uses water, acetone
Washing lotion cleaning, then with being dried with nitrogen.
In the present invention, the water concretely secondary deionized water.
In above-mentioned preparation method, step 1) is as follows in the surface of substrate connection octadecyl trichlorosilane alkane method:
The substrate is impregnated in Piranha washing lotion (volume ratio is the concentrated sulfuric acid of 7:3 and the mixed solution of hydrogen peroxide), is further taken out
The substrate, then washes with water；The substrate, which is placed in normal heptane and octadecyl trichlorosilane alkane volume ratio, again to be 1000:
In 1 mixed solution, the surface that the substrate can be obtained connects the octadecyl trichlorosilane alkane (lining of as OTS modification
Bottom).
In above-mentioned preparation method, the method for the vapor deposition exposure mask is vacuum exposure mask evaporation coating method；
The actual conditions of the vacuum exposure mask evaporation coating method are as follows: vacuum degree can be 10-6~0-7Torr, concretely 10- 6Torr, evaporation rate can be 0.01~0.05nm/s, and concretely 0.01nm/s, the material of vapor deposition are gold.
In above-mentioned preparation method, the material of the activity layer film is the strong flexible polymer for adulterating Nano silver grain；
The strong flexible polymer is specially thermoplastic polyurethane (abbreviation TPU) and/or dimethyl silicone polymer (abbreviation PDMS)；
The method of the spin coating activity layer film includes the following steps as follows: by the high resiliency of the doping Nano silver grain
Polymer solution drips to the surface for the top electrode being placed on sol evenning machine turntable, then by the revolving speed setting of sol evenning machine 4000~
8000r/s, spin-coating time can be 20~50s；
The support layer material is dimethyl silicone polymer (abbreviation PDMS)；
The method of the spin coating supporting layer, which includes the following steps: to drip to the dimethyl silicone polymer, is placed in sol evenning machine turn
The hearth electrode surface on disk, then the revolving speed of sol evenning machine is arranged in 1000~4000r/s, spin-coating time can be 20~60s.
In above-mentioned preparation method, the condition of the oxygen plasma treatment is as follows: power can be 70W~120W, specifically
It can be 100W, the time can be 0.5~2min, concretely 1min, and gas flow rate can be 5~10sccm, concretely 8sccm.
In above-mentioned preparation method, the temperature of heating described in step 6) can be 80 DEG C~120 DEG C, concretely 100 DEG C,
Time can be 2min~10min, concretely 3min.
To guarantee that the hearth electrode and the active layer film are strictly parallel in the present invention, in step 6) in transfer process
And planar device avoids the occurrence of fold as far as possible.
The present invention also provides the stretchable memristors that above-mentioned preparation method is prepared.
Stretchable memristor of the present invention is applied to prepare portable and/or wearable intelligentized microelectronic product neck
In domain.
The invention has the following advantages that
1, active layer of the stretchable strong flexible polymer that the present invention uses Nano silver grain to adulterate as memristor, elasticity
Material PDMS prepares device as the supporting layer of memristor.This can guarantee that new device has excellent flexibility；
2, the present invention replaces traditional evaporation coating method to prepare active layer, preparation method letter using the method for solution spin coating
It is single.
3, the present invention uses laminate patch, and the advanced technologies such as removing can operate, strong flexible polymer active layer does not have at room temperature
Damage by heat radiation；Simple with manufacture craft, the advantages such as low in cost, product has light weight, flexibility, stretchable etc.
Feature, and size is small, is conducive to integrated.Possess in many such as portable, wearable intelligentized microelectronic product fields
Vast potential for future development and application potential.
Detailed description of the invention
Fig. 1 shows the structure analogy between memristor and typical biological synapse.
Fig. 2 is the fabrication scheme of stretchable memristor.
Fig. 3 is the corresponding non-linear electric character of 1 memristor of the embodiment of the present invention；Fig. 3 (a) device is in continuous 5 negative senses
I-V characteristic during scanning and 5 forward scan；Voltage of the Fig. 3 (b) according to application, the response current (I-t of device at any time
Characteristic).
Fig. 4 shows cynapse simulated performance of 1 memristor of the embodiment of the present invention under different stretch strain.
Fig. 5 shows the non-linear electric character of 2 memristor of the embodiment of the present invention；Fig. 5 (a) device is in continuous 6 forward directions
I-V characteristic during scanning and 6 negative sense scanning；Voltage of the Fig. 5 (b) according to application, the response current (I-t of device at any time
Characteristic)；The cynapse simulated performance of Fig. 5 (c) memristor.
Fig. 6 is 3 memristor non-linear electric character of the embodiment of the present invention；Fig. 6 (a) device is in continuous 4 forward scan and 4
I-V characteristic during secondary negative sense scanning；Voltage of the Fig. 6 (b) according to application, the response current (I-t characteristic) of device at any time.
Fig. 7 is 4 memristor non-linear electric character of the embodiment of the present invention；Fig. 7 (a) is according to the voltage of application, and device is at any time
Between response current (I-t characteristic)；The cynapse simulated performance of Fig. 7 (b) memristor.
Specific embodiment
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
Embodiment 1, preparation are based on the organic memristor of strong flexible polymer
1, octadecyl trichlorosilane alkane (OTS) modifies substrate silicon surface, the specific steps are as follows: (1) by the silicon wafer after cutting
It is sequentially placed into secondary deionized water, acetone rinse and cleans, then with being dried with nitrogen；(2) hydroxylating is carried out to silicon wafer: will be through step
(1) (volume ratio is the concentrated sulfuric acid of 7:3 and the mixed solution of hydrogen peroxide, specific 35mL in Piranha washing lotion for treated silicon wafer
The concentrated sulfuric acid and the mixing of 15mL hydrogen peroxide) in impregnate 0.5h, further take out silicon wafer, and rinse substrate with secondary deionized water；(3) right
Silicon wafer carries out OTS modification: substrate being placed in normal heptane and octadecyl trichlorosilane alkane (abbreviation OTS) volume ratio is the mixed of 1000:1
It closes and impregnates 1h in solution (specific 80mL normal heptane and 80 μ L OTS), after finally rinsing simultaneously ultrasound with chloroform, blown with nitrogen
It is dry, the substrate modified through OTS can be obtained.
2, vacuum evaporation mask is utilized respectively on the substrate of OTS modification and prepare top electrode and bottom without the method for mask
Electrode.
The actual conditions of vacuum exposure mask vapor deposition are as follows: vacuum degree 10-6Torr, evaporation rate 0.01nm/s, vapor deposition
Specific material is gold.
Be deposited hearth electrode with a thickness of 30nm, top electrode with a thickness of 30nm.
Wherein the mask pattern of top electrode is the circle that diameter is 300 μm, and center of circle spacing is 600 μm.Evaporation coating method is specific
For exposure mask evaporation coating method,
3, the spin coating active layer thermoplastic polyurethane TPU of Nano silver grain (doping) and solidify on top electrode: with quality
Score is the proportional arrangement TPU solution of 30wt% (solvent is tetrahydrofuran), stirs 12h；With 16:1 (TPU:Ag NPs solution,
Volume ratio) proportional arrangement TPU:Ag NPs solution, stir 6h；In one layer of TPU:Ag NPs of patterned top electrode surface spin coating
Solution (revolving speed of sol evenning machine is set as 5000r/s, spin-coating time 40s).It is then placed in 100 DEG C of 1h that are heating and curing in baking oven.
4, spin coating supporting layer (polydimethylsiloxane) and solidify on hearth electrode:
With the proportional arrangement PDMS solution of 10:1 (PDMS: curing agent, volume ratio), 2h is stood after stirring；In pattern-free
One layer of PDMS solution of the hearth electrode surface spin coating revolving speed of sol evenning machine (be arranged in 2000r/s, spin-coating time 60s).Then it puts
Enter 70 DEG C of 30min that are heating and curing in baking oven.
5, oxygen plasma treatment bottom/top electrode surface: step (4) obtained related hearth electrode of support layer film is utilized
It is whole to be stripped down from hearth electrode substrate, then put hearth electrode, the obtained active layer film of step (3) into oxygen etc. simultaneously
60s is handled in gas ions, makes the two surface hydroxylation.
6, it to positive hearth electrode and top electrode and heats: by hydroxylated hearth electrode that step (5) obtains to being just laminated to hydroxyl
On the active layer film of base, then being put into baking oven (temperature: 100 DEG C) heating 3min to the entirety after just, it is therefore an objective to make
Hearth electrode and active layer film surface form irreversible key, connect it closely, so far, supporting layer (PDMS), hearth electrode, work
Property layer (TPU:Ag NPs) and top electrode are connected to form a whole.
7, entire device is stripped down using the obtained support layer film of step (4) from top electrode substrate: is utilized
Hearth electrode with thicker PDMS gets off the top electrode global transfer with active layer (TPU:Ag NPs), whole to overturn, this
The stretchable memristor based on strong flexible polymer for active layer is just obtained.
Fig. 3 is the corresponding non-linear electric character of memristor of the present invention.(a) device is scanned with 5 times just in continuous 5 negative senses
To the I-V characteristic during scanning.(b) according to the voltage of application, the response current (I-t characteristic) of device at any time.
Fig. 4 shows cynapse simulated performance of the Au/TPU:Ag NPs/Au memristor under different stretch strain.
The above results show that the organic memristor of strong flexible polymer of the invention is still existing with memristor under tensile strain
As.
Embodiment 2, preparation are based on the organic memristor of strong flexible polymer
1, it cleans the surface hearth electrode ITO: first removing the protective layer used tweezers on ITO；Then ITO acetone is put into wash
Ultrasound 15min in liquid；ITO is put into ultrasound 15min in ethyl alcohol washing lotion again；Finally ITO is put into secondary deionized water and is surpassed
Sound 15min.
2, the spin coating active layer thermoplastic polyurethane TPU:Ag NPs of Nano silver grain (doping) is simultaneously on the cleaning surface ITO
Solidify: the proportional arrangement TPU solution using mass fraction for 30wt% (solvent is tetrahydrofuran) stirs 12h；With 8:1 (TPU:Ag
NPs solution, volume ratio) proportional arrangement TPU:Ag NPs solution, stir 6h；At one layer of the spin coating of patterned top electrode surface
TPU:Ag NPs solution (revolving speed of sol evenning machine is arranged in 5000r/s, spin-coating time 40s).It is then placed in baking oven and adds for 100 DEG C
Heat cure 1h.
3, top is deposited using the method for vacuum evaporation mask on the active layer obtained by step (2) (TPU:Ag NPs) film
Electrode:
The actual conditions of vacuum exposure mask vapor deposition are as follows: vacuum degree 10-6Torr, evaporation rate 0.01nm/s, vapor deposition top
Electrode with a thickness of 30nm, the specific material of vapor deposition is gold.
Wherein the mask pattern of top electrode is the circle that diameter is 300 μm, and center of circle spacing is 600 μm.
So far to get the memristor arrived based on strong flexible polymer for active layer.
Fig. 5 shows the non-linear electric character of the Au/TPU:Ag NPs/ITO memristor of above-mentioned preparation.(a) device exists
I-V characteristic during continuous 6 forward scan and 6 negative sense scanning.(b) according to the voltage of application, the response of device at any time
Electric current (I-t characteristic).(c) the cynapse simulated performance of memristor.
The above results show that the organic memristor of strong flexible polymer of the invention changes hearth electrode material and still has memristor
Phenomenon.
Embodiment 3, preparation are based on the organic memristor of strong flexible polymer
1, octadecyl trichlorosilane alkane (OTS) modify substrate silicon surface, the specific steps are as follows: 1. by the silicon wafer after cutting according to
Secondary be placed in secondary deionized water, acetone rinse is cleaned, then with being dried with nitrogen；2. carrying out hydroxylating to silicon wafer: will be through step 1.
Treated, and silicon wafer impregnates 0.5h in Piranha washing lotion (volume ratio is the concentrated sulfuric acid of 7:3 and the mixed solution of hydrogen peroxide),
Silicon wafer is further taken out, and rinses substrate with secondary deionized water；3. carrying out OTS modification to silicon wafer: substrate is placed in normal heptane and ten
Eight alkyltrichlorosilanes volume ratios are after finally being rinsed with chloroform and is ultrasonic, to be blown with nitrogen in the mixed solution of 1000:1
It is dry, the substrate modified through OTS can be obtained.
2, hearth electrode is prepared using the method for vacuum evaporation on the substrate of OTS modification: the specific item of vacuum exposure mask vapor deposition
Part is as follows: vacuum degree 10-6Torr, evaporation rate be specially 0.01nm/s, be deposited hearth electrode with a thickness of 30nm, vapor deposition
Specific material is gold.
3, spin coating supporting layer (polydimethylsiloxane) and solidify on hearth electrode:
With the proportional arrangement PDMS solution of 10:1 (PDMS: curing agent, volume ratio), 2h is stood after stirring；In pattern-free
One layer of PDMS solution of the hearth electrode surface spin coating revolving speed of sol evenning machine (be arranged in 2000r/s, spin-coating time 60s).Then it puts
Enter 70 DEG C of 30min that are heating and curing in baking oven.
4, under being removed from hearth electrode substrate with the related hearth electrode of step (3) obtained support layer film is whole first
Come.
5, spin coating active layer (the thermoplastic poly ammonia of doping Nano silver grain on the surface of step (4) resulting hearth electrode
Ester TPU:Ag NPs) and solidify: the proportional arrangement TPU solution using mass fraction for 30wt% (solvent is tetrahydrofuran), stirring
12h；With the proportional arrangement TPU:Ag NPs solution of 16:1 (TPU:Ag NPs solution, volume ratio), 6h is stirred；On patterned top
One layer of TPU:Ag NPs solution of electrode surface spin coating (revolving speed of sol evenning machine is arranged in 5000r/s, spin-coating time 40s).Then
It is put into 100 DEG C of 1h that are heating and curing in baking oven.
6, top electrode is prepared using the method for vacuum evaporation mask in the obtained active layer surface of step (5).
The actual conditions of vacuum exposure mask vapor deposition are as follows: vacuum degree 10-6Torr, evaporation rate 0.01nm/s, top electrode
With a thickness of 30nm, the specific material of vapor deposition is aluminium.
Wherein the mask pattern of top electrode is the circle that diameter is 300 μm, and center of circle spacing is 600 μm.
So far to get to the present invention is based on the memristors that strong flexible polymer is active layer.
Fig. 6 is Al/TPU:Ag NPs/ITO memristor non-linear electric character.(a) device in continuous 4 forward scan and
I-V characteristic during 4 negative sense scanning.(b) according to the voltage of application, the response current (I-t characteristic) of device at any time.It is above-mentioned
The result shows that the organic memristor of strong flexible polymer of the invention, which changes top electrode material, still has memristor phenomenon.
Embodiment 4, preparation are based on the organic memristor of strong flexible polymer
1, it cleans the surface hearth electrode ITO: first removing the protective layer used tweezers on ITO；Then ITO acetone is put into wash
Ultrasound 15min in liquid；ITO is put into ultrasound 15min in ethyl alcohol washing lotion again；Finally ITO is put into secondary deionized water and is surpassed
Sound 15min.
2, the spin coating active layer (polydimethylsiloxane of doping Nano silver grain: Ag on the cleaning surface ITO
NPs) and solidify: with the proportional arrangement PDMS solution of 10:1 (PDMS: curing agent, volume ratio), standing 2h after stirring；With 1:6
The proportional arrangement PDMS dilute solution of (PDMS solution: DOW CORNING OS20 diluent, volume ratio) stirs 12h；With 20:1 (PDMS
Dilute solution: Ag NPs solution, volume ratio) proportional arrangement PDMS:Ag NPs solution, stir 12h；In patterned top electrode
One layer of PDMS:Ag NPs solution of surface spin coating (revolving speed of sol evenning machine is arranged in 5000r/s, spin-coating time 40s).It is then placed in
70 DEG C of 1h that are heating and curing in baking oven.
3, it is deposited on the active layer obtained by step (2) (PDMS:Ag NPs) film using the method for vacuum evaporation mask
Top electrode: the actual conditions of vacuum exposure mask vapor deposition are as follows: vacuum degree 10-6-10-7Torr (specially 10-6Torr), vapor deposition speed
Rate is 0.01nm/s, be deposited top electrode with a thickness of 30nm, the specific material of vapor deposition is gold.
Wherein the mask pattern of top electrode is the circle that diameter is 300 μm, and center of circle spacing is 600 μm.
So far to get the memristor arrived based on strong flexible polymer for active layer.
Fig. 7 shows the non-linear electric character of the Au/PDMS:Ag NPs/ITO memristor of above-mentioned preparation.(a) basis is applied
The voltage added, the response current (I-t characteristic) of device at any time.(b) the cynapse simulated performance of memristor.
The above results show that the preparation method of the invention based on the memristor that strong flexible polymer is active layer can answer
It uses in a variety of high elastic polymer materials, and stretchable memristor can be prepared.
Claims (10)
1. a kind of stretchable memristor, it is characterised in that: it successively includes support layer film, hearth electrode, active layer from the bottom to top
Film and top electrode are formed by connecting；
The material of the activity layer film is the strong flexible polymer for adulterating Nano silver grain.
2. stretchable memristor according to claim 1, it is characterised in that: the strong flexible polymer is thermoplastic poly ammonia
Ester and/or dimethyl silicone polymer；
The support layer material is dimethyl silicone polymer.
3. stretchable memristor according to claim 1 or 2, it is characterised in that: the top electrode with a thickness of 20~
100nm；
The hearth electrode with a thickness of 20~100nm；
The top electrode is equipped with patterning；Pattern-free on the hearth electrode；
The pattern dimension of the top electrode is 50~500 μm.
4. the preparation method of stretchable memristor of any of claims 1-3, includes the following steps:
1) octadecyl trichlorosilane alkane is connected on the surface of substrate；
2) on the substrate after step 1) modification, patterned top electricity is prepared respectively using deposition mask and the not method of exposure mask
The hearth electrode of pole and pattern-free；
3) the spin coating active layer solution on the top electrode surface that step 2) obtains, and solidified, obtain active layer film；
4) the spin coating supporting layer solution on the hearth electrode surface that step 2) obtains, and solidified, be supported layer film；
5) the related hearth electrode entirety of the support layer film that step 4) obtains is removed from the substrate, then in institute
State the surface of hearth electrode, step 3) the active layer film surface coated on the top electrode carries out oxygen plasma respectively
Processing forms hydroxyl on surface；
6) surface of hydroxylated hearth electrode described in step 5) and active layer film surface are carried out to just and heating, then by institute
Support layer film, the hearth electrode, the active layer film and the top electrode is stated to be connected to form a whole, it then will be whole
It removes from the substrate of the top electrode to get to stretchable memristor.
5. the preparation method according to claim 4, it is characterised in that: the substrate is silicon or glass；
Further include the steps that cleaning the substrate in the step 1) of the method；The substrate successively uses water, acetone rinse
Cleaning, then with being dried with nitrogen.
6. preparation method according to claim 4 or 5, it is characterised in that: step 1) connects ten on the surface of the substrate
Eight alkyltrichlorosilanes methods are as follows: the substrate impregnated in Piranha washing lotion, further takes out the substrate, it is then clear with water
It washes；The substrate is placed in normal heptane and octadecyl trichlorosilane alkane volume ratio for that can obtain in the mixed solution of 1000:1 again
The octadecyl trichlorosilane alkane is connected to the surface of the substrate.
7. the preparation method according to any one of claim 4-6, it is characterised in that: the method for the vapor deposition exposure mask is true
Empty exposure mask evaporation coating method；
The condition of the vacuum exposure mask evaporation coating method is as follows: vacuum degree 10-6~0-7Torr, evaporation rate be 0.01~
0.05nm/s, the material of vapor deposition are gold.
8. the preparation method according to any one of claim 4-7, it is characterised in that: the side of the spin coating activity layer film
Method includes the following steps as follows: the strong flexible polymer solution of the doping Nano silver grain being dripped to and is placed on sol evenning machine turntable
The top electrode surface, then by the setting of the revolving speed of sol evenning machine in 4000~8000r/s, spin-coating time is 20~50s；
The method of the spin coating supporting layer, which includes the following steps: to drip to the dimethyl silicone polymer, to be placed on sol evenning machine turntable
The hearth electrode surface, then by the setting of the revolving speed of sol evenning machine in 1000~4000r/s, spin-coating time is 20~60s.
9. the preparation method according to any one of claim 4-8, it is characterised in that: the item of the oxygen plasma treatment
Part is as follows: power is 70W~120W, and the time is 0.5~2min, and gas flow rate is 5~10sccm；
The temperature of heating described in step 6) is 80 DEG C~120 DEG C, and the time is 2min~10min.
10. stretchable memristor described in any one of claim 1-3 is preparing portable and/or wearable intelligentized micro- electricity
Application in sub- product scope.
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| CN110943168A (en) * | 2019-12-13 | 2020-03-31 | 福州大学 | Stretchable synapse based on organic thin film transistor and preparation method thereof |
| CN112599664A (en) * | 2020-11-25 | 2021-04-02 | 南京大学 | Ultralow-energy-consumption flexible thin film memristor for simulating nerve synapse and preparation method thereof |
| CN114335231A (en) * | 2021-12-31 | 2022-04-12 | 深圳大学 | Light modulation memristor based on heterojunction and preparation method and application thereof |
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| CN110943168A (en) * | 2019-12-13 | 2020-03-31 | 福州大学 | Stretchable synapse based on organic thin film transistor and preparation method thereof |
| CN112599664A (en) * | 2020-11-25 | 2021-04-02 | 南京大学 | Ultralow-energy-consumption flexible thin film memristor for simulating nerve synapse and preparation method thereof |
| CN112599664B (en) * | 2020-11-25 | 2023-09-22 | 南京大学 | Ultra-low energy consumption flexible thin film memristor simulating nerve synapses and preparation method thereof |
| CN114335231A (en) * | 2021-12-31 | 2022-04-12 | 深圳大学 | Light modulation memristor based on heterojunction and preparation method and application thereof |
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