CN109037015A - Ion Implantation Equipment and monitoring method - Google Patents
Ion Implantation Equipment and monitoring method Download PDFInfo
- Publication number
- CN109037015A CN109037015A CN201810877463.4A CN201810877463A CN109037015A CN 109037015 A CN109037015 A CN 109037015A CN 201810877463 A CN201810877463 A CN 201810877463A CN 109037015 A CN109037015 A CN 109037015A
- Authority
- CN
- China
- Prior art keywords
- light source
- ion
- monitoring
- monitoring device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of Ion Implantation Equipment and monitoring method, Ion Implantation Equipment include: working chamber；Positioned at working chamber intermediate ion source device, the ion source device includes ion sieve plate, has screen slot in the ion sieve plate；Monitoring device in the working chamber；The monitoring device includes: light source emitter；Light source receiver；When the monitoring device is in monitoring state, for the line of the light source receiver and the light source emitter by the screen slot, the light source emitter launch monitor light and by exposing to light source receiver after screen slot, the light source receiver receives the monitoring light.The ion implantation function improves the monitoring accuracy to ion sieve plate consumption degree.
Description
Technical field
The present invention relates to ion embedding technology more particularly to a kind of Ion Implantation Equipment and monitoring methods.
Background technique
Ionic-implantation is the mark that a kind of ion for that will change material conductivity is introduced into workpiece (work piece)
Quasi- technology.The equipment for carrying out ion implantation use is known as Ion Implantation Equipment.
Ion Implantation Equipment includes ion source.Ion source provide have predetermined energy ion beam, and by ion beam guide to
At the surface of workpiece.In ion beam energetic ion injection workpiece material main body in, and imbed in workpiece material with formed have
The region of required electric conductivity.
In order to guarantee the normal work of Ion Implantation Equipment, need often to replace some components in ion implantation apparatus.Tool
Body, it decides whether to replace by the degree of monitoring component consumption.
However, the precision of existing monitoring method is to be improved.
Summary of the invention
Problems solved by the invention is to provide a kind of Ion Implantation Equipment and monitoring method, consumes journey to ion sieve plate to improve
The monitoring accuracy of degree.
To solve the above problems, the present invention provides a kind of Ion Implantation Equipment, comprising: working chamber；Positioned at working chamber intermediate ion
Source device, the ion source device include ion sieve plate, have screen slot in the ion sieve plate；Prison in the working chamber
Survey device；The monitoring device includes: light source emitter；Light source receiver；When the monitoring device is in monitoring state, institute
The line of light source receiver and the light source emitter is stated by the screen slot, the light source emitter launch monitor light simultaneously passes through
Light source receiver is exposed to after screen slot, the light source receiver receives the monitoring light.
Optionally, further includes: position switching machine, the position switching machine are suitable for cutting between the first position and the second position
Change the position of monitoring device；When the monitoring device is in monitoring state, the monitoring device is located at the second position；When described
When monitoring device is in first position, the monitoring device is located at any side around ion source device.
Optionally, the position switching machine is elevator；When the monitoring device is in first position, the monitoring dress
Set the top for being integrally located at ion source device.
Optionally, the monitoring device further include: connecting rod, the connecting rod have opposite first end and second end,
And the interconnecting piece between first end and second end, the light source emitter are fixedly connected with first end, the light source connects
It receives device to be fixedly connected with second end, the elevator is fixedly connected with the interconnecting piece, and the elevator is used for drive connection bar
It carries out elevating movement and switches monitoring device between the first position and the second position.
Optionally, the ion source device further include: ion generator, the ion generator is for generating ion beam；
The ion sieve plate is for screening the ion beam when the monitoring device is in first position.
Optionally, the light source emitter includes laser generator.
Optionally, the light source receiver includes photoelectric converter.
Optionally, the width of the screen slot is 3 millimeters~3.5 millimeters；The beam diameter of the monitoring light is 5 millimeters~6
Millimeter.
The present invention also provides a kind of monitoring methods, comprising: provides above-mentioned Ion Implantation Equipment；Using the monitoring device pair
Screen slot is monitored, and the line of the light source receiver and the light source emitter passes through the screen slot, the light source emitter
Launch monitor light and by exposing to light source receiver after screen slot, the light source receiver receives monitoring light；It is received according to light source
The size of the how much judgement screen slots for the monitoring light that device receives；
Optionally, the light source receiver is photoelectric converter；The light source receiver is according to the monitoring light received
How much judge that the processes of the size of screen slot include: that the information of the monitoring light received is converted to telecommunications by the light source receiver
Number；Size according to the electric signal judges the size of screen slot.
Compared with prior art, technical solution of the present invention has the advantage that
In the Ion Implantation Equipment that technical solution of the present invention provides, when monitoring device is in monitoring state, the light source is connect
The line of device and the light source emitter is received by the screen slot, the light source emitter launch monitor light and by shining after screen slot
It is incident upon light source receiver, the light source receiver receives the monitoring light.Light source receiver it is received monitoring light number can
Characterize the size of the screen slot.Being used cooperatively by light source emitter and light source receiver in this way, avoids relying on eye-observation
Judge ion sieve plate consumption degree, so that the monitoring effect to ion sieve plate consumption degree quantifies, improves and disappear to ion sieve plate
The monitoring accuracy of consumption degree.
Secondly, capableing of the consumption degree of real-time monitoring ion sieve plate, too early or too late replacement ion sieve plate is avoided, ion is made
While sieve plate meets the quality requirement of technique progress, guarantee the maximization utilized to ion sieve plate.
Further, the Ion Implantation Equipment further includes position switching machine, the position switching machine be suitable in first position and
Switch the position of monitoring device between the second position, when the monitoring device is in monitoring state, the monitoring device is located at
The second position.When monitoring device is in first position, since the monitoring device is located at any side around ion source device,
Therefore do not influence the path of ion beam, the ion sieve plate can screen ion beam, Ion Implantation Equipment be able to carry out from
Sub- injection technology.
In the monitoring method that technical solution of the present invention provides, screen slot is monitored using the monitoring device, the light
Source transmitter launch monitor light and by exposing to light source receiver after screen slot, the light source receiver receives monitoring light.Light source
The received monitoring light of receiver number can characterize the size of the screen slot.It can be received in this way by light source emitter and light source
Device is used cooperatively, and is avoided relying on eye-observation and is judged ion sieve plate consumption degree, so as to the prison of ion sieve plate consumption degree
Effect quantization is surveyed, the monitoring accuracy to ion sieve plate consumption degree is improved.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of Ion Implantation Equipment；
Fig. 2 is structural schematic diagram of one embodiment of the invention intermediate ion implanter in first position；
Fig. 3 is structural schematic diagram of one embodiment of the invention intermediate ion implanter in the second position；
Fig. 4 is the flow chart of monitoring process in another embodiment of the present invention.
Specific embodiment
As described in background, the precision of existing monitoring method is to be improved.
A kind of Ion Implantation Equipment, with reference to Fig. 1, comprising: working chamber 100；Positioned at 100 intermediate ion source device of working chamber, ion
Source device includes ion generator 121 and ion sieve plate 122, has screen slot in the ion sieve plate 122.
The ion generator 121 is used to screen ion beam for ion beam, the ion sieve plate 122 to occur, specifically,
The density of the ion beam fringe region is smaller relative to the density of the ion beam intermediate region, by ion sieve plate 122
Screening, ion beam fringe region cannot be by screen slot by the blocking of ion sieve plate 122, and ion beam intermediate region is not by ion sieve
Plate 122 stops and by screen slot, is achieved in that the more consistent ion beam of ion concentration.
Since ion beam can consume ion sieve plate 122, is become larger for a long time using will lead to screen slot, lead to ion sieve plate 122
Screening capacity decline to ion beam, therefore after use after a period of time, the ion sieve plate 122 is larger due to consuming
And it needs replacing.
In general, judging whether to need replacing by the consumption degree of the eyes observation ion sieve plate 122 of engineer, cause
It is lower to the monitoring accuracy of 122 consumption degree of ion sieve plate.
On this basis, the present invention provides a kind of Ion Implantation Equipment, comprising: working chamber；It is filled positioned at working chamber intermediate ion source
It sets, the ion source device includes ion sieve plate, has screen slot in the ion sieve plate；Monitoring dress in the working chamber
It sets；The monitoring device includes: light source emitter；Light source receiver；When the monitoring device is in monitoring state, the light
The line of source receiver and the light source emitter simultaneously passes through screen slot by the screen slot, the light source emitter launch monitor light
After expose to light source receiver, the light source receiver receives the monitoring light.The ion implantation function is improved to ion sieve
The monitoring accuracy of plate consumption degree.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
The present embodiment provides a kind of Ion Implantation Equipments, referring to figs. 2 and 3, comprising:
Working chamber 20；
Ion source device 200 in working chamber 20, the ion source device 200 include ion sieve plate 220, it is described from
There is screen slot 221 in sub- sieve plate 220；
Monitoring device 240 in the working chamber 20；
The monitoring device 240 includes: light source emitter 241；Light source receiver 242；
(Fig. 3 is referred to) when the monitoring device 240 is in monitoring state, the light source receiver 242 and the light source
The line of transmitter 241 is by the screen slot 221, the 241 launch monitor light of light source emitter and by irradiating after screen slot 221
To light source receiver 242, the light source receiver 242 receives the monitoring light.
When the monitoring device 240 is in monitoring state, the light source receiver 242 and the light source emitter 241
The two sides of the ion sieve plate 220 are located at, and the light source receiver 242 and the light source emitter 241 are towards institute
State screen slot 221.
The ion source device 200 further include: ion generator 210, the ion generator 210 is for generating ion
Beam.
The ion sieve plate 220 is for screening the ion beam, specifically, the density of the ion beam fringe region is opposite
Density in the ion beam intermediate region is smaller, and by the screening of ion sieve plate 220, ion beam fringe region is by ion sieve plate
220 stop and cannot be by screen slot 221, and ion beam intermediate region is not stopped by ion sieve plate 220 and by screen slot 221, this
Sample obtains the more consistent ion beam of ion concentration.
The ion sieve plate 220 includes two pieces of graphite plates, and the space between two pieces of graphite plates is screen slot 221, and described two pieces
The arragement direction of graphite plate is parallel to the surface of graphite plate.In the present embodiment, the ion sieve plate 220 is graphite plate, benefit packet
Include: during ion sieve plate 220 screens ion beam, the atom sputtered out is fewer, and carbon atom is neither N-type ion
It is also not P-type ion, carbon atom is smaller to the Conductivity of the object of ion implantation.
The Ion Implantation Equipment further include: position switching machine 244, the position switching machine 244 be suitable in first position and
Switch the position of monitoring device 240 between the second position.
When the monitoring device 240 is in monitoring state, the monitoring device 240 is located at the second position (with reference to Fig. 3).
When the monitoring device 240 is in first position, the monitoring device 240 is located at around ion source device 200
Any side.
In the present embodiment, the position switching machine 244 is elevator, when the monitoring device 240 is in first position,
The monitoring device 240 is integrally located at the top of ion source device 200.The elevator includes motor.
In other embodiments, other structures may be selected in the position switching machine, when the monitoring device is in first
When setting, the monitoring device is located at any side around ion source device, such as: positioned at the upper of monitoring device entirety ion source device
Side, lower section or side.
The ion sieve plate 220 is for screening the ion beam when the monitoring device 240 is in first position.
The light source emitter 241 includes laser generator.
The light source emitter 241 is used for launch monitor light, when light source emitter 241 is laser generator, the prison
Survey light is laser.
In the present embodiment, the lesser laser of the angle of divergence can be obtained using laser generator.In a specific embodiment
In, the angle of divergence of the laser is zero.In this way, obtain expose to light source receiver hot spot size after, the hot spot it is big
The small size for directly characterizing screen slot.
The light source receiver 242 includes photoelectric converter, and the photoelectric converter includes two pole of photo resistance or photoelectricity
Pipe.
The monitoring device 240 further include: connecting rod 243, the connecting rod 243 have opposite first end and second
End and the interconnecting piece between first end and second end, the light source emitter 241 is fixedly connected with first end, described
Light source receiver 242 is fixedly connected with second end, and the elevator is fixedly connected with the interconnecting piece, and the elevator is for driving
Dynamic connecting rod 243 carries out elevating movement and switches monitoring device 240 between the first position and the second position.
In a specific embodiment, the reception at the center of the transmitting terminal of light source emitter 241 and light source receiver 242
The center at end is in sustained height.The center of the receiving end at the center and light source receiver 242 of the transmitting terminal of light source emitter 241
Line pass through screen slot 221 and vertical with the surface of ion sieve plate 220.
In the present embodiment, the width of the screen slot is 3 millimeters~3.5 millimeters, and the beam diameter of the monitoring light is 5 millimeters
~6 millimeters.
In Ion Implantation Equipment in the present embodiment, when monitoring device 240 is in first position, the monitoring device 240
Any side around ion source device 200, does not influence the path of ion beam in this way.When monitoring device 240 is in monitoring shape
When state, i.e., when monitoring device 240 is located at the second position, the line of the light source receiver 241 and the light source emitter 242 is logical
Cross the screen slot 221, the 241 launch monitor light of light source emitter and by exposing to light source receiver 242 after screen slot 221,
The light source receiver 242 receives monitoring light.Light source receiver 242 it is received monitoring light number can characterize the screen slot
221 size.Being used cooperatively by light source emitter 241 and light source receiver 242 in this way avoids relying on eye-observation judgement
The consumption degree of ion sieve plate 220 improves so that the monitoring effect to 220 consumption degree of ion sieve plate quantifies to ion sieve
The monitoring accuracy of 220 consumption degree of plate.
Another embodiment of the present invention also provides a kind of monitoring method, with reference to Fig. 4, comprising:
S01: above-mentioned Ion Implantation Equipment is provided；
S02: screen slot 221 is monitored using the monitoring device 240, the light source receiver 242 and the light source
The line of transmitter 241 is by the screen slot 221, the 241 launch monitor light of light source emitter and by irradiating after screen slot 221
To light source receiver 242, the light source receiver 242 receives monitoring light；
S03: the size of how much judgement screen slots 221 of the monitoring light received according to light source receiver 242.
Monitoring device 240 is placed in by the second position, the light source receiver 242 and the light using position switching machine 244
The line of source transmitter 241 is monitored screen slot 221 by the screen slot 221.
In the present embodiment, position switching machine 244 is elevator, the position switching machine 244 is driven, by the monitoring device
240 processes for being placed in the second position include: that the driving position switching machine 244 declines connecting rod 243, under connecting rod 243
Drop drives light source receiver 242 and the light source emitter 241 to decline, and emits the light source receiver 242 and the light source
Device 241 is located at the two sides of the ion sieve plate 220, and the light source receiver 242 and the equal court of the light source emitter 241
To the screen slot 221, the line of the light source receiver 242 and the light source emitter 241 passes through the screen slot 221.
In the present embodiment, the light source receiver 242 is photoelectric converter, correspondingly, being in the monitoring device 240
When the second position, the light source receiver 242 is according to the process packet of the size of how much judgement screen slots 221 of the monitoring light received
Include: the information of the monitoring light received is converted to electric signal by the light source receiver 242；Size according to the electric signal is sentenced
The size of disconnected screen slot 221.
In one embodiment, in the case that the ion sieve plate 220 is not to be lost, the light source emitter 241 is sent out
It penetrates monitoring light and exposes to light source receiver 242 after passing through screen slot 221, the light source receiver 242 receives monitoring light and will simultaneously connect
The information of the monitoring light received is converted to electric signal, obtains the first electric signal；When the lossy situation of the ion sieve plate 220
Under, the 241 launch monitor light of light source emitter and by exposing to light source receiver 242 after screen slot 221, the light source receives
Device 242 receives monitoring light and the information of the monitoring light received is converted to electric signal, obtains the second electric signal；According to the second electricity
Difference between signal and the first electric signal, obtain screen slot 221 it is lossy when size and difference when not being lost between size；
Difference and screen slot 221 size when not being lost when not being lost according to size of the screen slot 221 when lossy and between size,
Obtain size of the screen slot 221 when lossy.
When monitoring device 240 is in first position, by ion beam in the screen slot 221 of the ion sieve plate 220, to from
Beamlet is screened.
In the present embodiment, further includes: after the size for obtaining the screen slot 221, the position switching machine 244 is driven, by institute
It states monitoring device 240 and is placed in first position, the monitoring device 240 is located at any side around ion source device 200.
In the present embodiment, position switching machine 244 is elevator, the position switching machine 244 is driven, by the monitoring device
240 processes for being placed in first position include: that the driving position switching machine 244 rises connecting rod 243, connecting rod 243 it is upper
It rises and light source receiver 242 and the light source emitter 241 is driven to rise, and then monitoring device 240 is made to be integrally located at ion source dress
It sets on 200.
In monitoring method in the present embodiment, screen slot 221 is monitored using the monitoring device 240, the light source
241 launch monitor light of transmitter and by exposing to light source receiver 242 after screen slot 221, the light source receiver 242 receives prison
Survey light.The received monitoring light of light source receiver 242 number can characterize the size of the screen slot 221.Light source can be passed through in this way
Being used cooperatively for transmitter 241 and light source receiver 242, avoids relying on eye-observation and judges 220 consumption degree of ion sieve plate, make
It obtains and the monitoring effect of 220 consumption degree of ion sieve plate is quantified, improve the monitoring accuracy to 220 consumption degree of ion sieve plate.
Secondly, capableing of the consumption degree of real-time monitoring ion sieve plate 220, too early or too late replacement ion sieve plate is avoided, is made
While ion sieve plate 220 meets the quality requirement of technique progress, guarantee the maximization utilized to ion sieve plate 220.
After the size for obtaining the screen slot 221, the position switching machine 244 is driven, the monitoring device 240 is placed in
One position, the monitoring device 240 is located at any side around ion source device 200, therefore does not influence the path of ion beam, institute
Ion beam can be screened by stating ion sieve plate 220, and Ion Implantation Equipment is able to carry out ion implantation technology.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of Ion Implantation Equipment characterized by comprising
Working chamber；
Positioned at working chamber intermediate ion source device, the ion source device includes ion sieve plate, has screen slot in the ion sieve plate；
Monitoring device in the working chamber；
The monitoring device includes: light source emitter；Light source receiver；
When the monitoring device is in monitoring state, the line of the light source receiver and the light source emitter passes through described
Screen slot, the light source emitter launch monitor light and by exposing to light source receiver after screen slot, the light source receiver receives
The monitoring light.
2. Ion Implantation Equipment according to claim 1, which is characterized in that further include: position switching machine, the position switching
Machine is suitable for switching between the first position and the second position the position of monitoring device；When the monitoring device is in monitoring state
When, the monitoring device is located at the second position；When the monitoring device is in first position, the monitoring device is located at ion
Any side around source device.
3. Ion Implantation Equipment according to claim 2, which is characterized in that the position switching machine is elevator；When described
When monitoring device is in first position, the monitoring device is integrally located at the top of ion source device.
4. Ion Implantation Equipment according to claim 3, which is characterized in that the monitoring device further include: connecting rod, it is described
Connecting rod has opposite first end and second end and the interconnecting piece between first end and second end, the light source hair
Emitter is fixedly connected with first end, and the light source receiver is fixedly connected with second end, and the elevator and the interconnecting piece are solid
Fixed connection, the elevator for drive connection bar carry out elevating movement and make monitoring device first position and the second position it
Between switch.
5. Ion Implantation Equipment according to claim 2, which is characterized in that the ion source device further include: ion occurs
Device, the ion generator is for generating ion beam；The ion sieve plate is used for when the monitoring device is in first position
Screen the ion beam.
6. Ion Implantation Equipment according to claim 1, which is characterized in that the light source emitter includes laser generator.
7. Ion Implantation Equipment according to claim 1, which is characterized in that the light source receiver includes photoelectric converter.
8. Ion Implantation Equipment according to claim 1, which is characterized in that the width of the screen slot is 3 millimeters~3.5 millis
Rice；The beam diameter of the monitoring light is 5 millimeters~6 millimeters.
9. a kind of monitoring method characterized by comprising
Ion Implantation Equipment as described in claim 1 is provided；
Screen slot is monitored using the monitoring device, the line of the light source receiver and the light source emitter passes through institute
State screen slot, the light source emitter launch monitor light and by exposing to light source receiver after screen slot, the light source receiver connects
Take into custody survey light；
According to the size for the how much judgement screen slots for monitoring light that light source receiver receives.
10. monitoring method according to claim 9, which is characterized in that the light source receiver is photoelectric converter；
The light source receiver includes: according to the process of the size of how much judgement screen slots of the monitoring light received
The information of the monitoring light received is converted to electric signal by the light source receiver；Size judgement according to the electric signal
The size of screen slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810877463.4A CN109037015A (en) | 2018-08-03 | 2018-08-03 | Ion Implantation Equipment and monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810877463.4A CN109037015A (en) | 2018-08-03 | 2018-08-03 | Ion Implantation Equipment and monitoring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109037015A true CN109037015A (en) | 2018-12-18 |
Family
ID=64648281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810877463.4A Pending CN109037015A (en) | 2018-08-03 | 2018-08-03 | Ion Implantation Equipment and monitoring method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109037015A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1535470A (en) * | 2001-01-18 | 2004-10-06 | 瓦里安半导体设备联合公司 | Adjustable conductance limiting aperture for ion implanters |
| US20070158591A1 (en) * | 2000-11-02 | 2007-07-12 | Mitsuo Tokuda | Method and apparatus for processing a micro sample |
| CN101303956A (en) * | 2007-04-09 | 2008-11-12 | 精工电子有限公司 | Ion beam detection device, ion beam detection method, semiconductor manufacturing device and ion source device |
-
2018
- 2018-08-03 CN CN201810877463.4A patent/CN109037015A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070158591A1 (en) * | 2000-11-02 | 2007-07-12 | Mitsuo Tokuda | Method and apparatus for processing a micro sample |
| CN1535470A (en) * | 2001-01-18 | 2004-10-06 | 瓦里安半导体设备联合公司 | Adjustable conductance limiting aperture for ion implanters |
| CN101303956A (en) * | 2007-04-09 | 2008-11-12 | 精工电子有限公司 | Ion beam detection device, ion beam detection method, semiconductor manufacturing device and ion source device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210014979A1 (en) | Methods and Systems for Manufacturing Printed Circuit Board based on X-ray Inspection | |
| CN102867722B (en) | Device for detecting ion beam profile density distribution and ion beam uniformity distribution in real time | |
| CN108318800B (en) | GaN-based semiconductor laser chip detection device and method | |
| TW201117256A (en) | A mask health monitor using a faraday probe | |
| DE112016007196T5 (en) | BEAM TRANSMISSION / RECEIVING METHOD, BASIC STATION, TERMINAL AND WIRELESS COMMUNICATION SYSTEM | |
| CN109037015A (en) | Ion Implantation Equipment and monitoring method | |
| CN113533989A (en) | Battery detection system and battery detection method | |
| CN110361644B (en) | Device and method for detecting electrical property of LED chip | |
| TWI716575B (en) | Scanning electron microscopy apparatus and method for charge control for imaging floating metal structures | |
| CN105097400A (en) | Ion injection system and method | |
| CN107430974B (en) | Bipolar wafer charge monitor system and ion implantation system comprising same | |
| CN113101544A (en) | Beam halo detector interlocking application system and method for heavy ion treatment device | |
| CN103491698A (en) | Micro-focus X-ray source dynamic focus control method | |
| CN102519587B (en) | Device for measuring light intensity distribution of laser beams | |
| TWI830859B (en) | Check device | |
| Rauls et al. | Reassignment of phosphorus-related donors in SiC | |
| CN105742200B (en) | A method of promoting time breakdown test validity | |
| CN111722075B (en) | Test structure for latent track characterization of GaN-based HEMT device and characterization method | |
| Roncarolo et al. | Transverse profile and emittance measurements with a laser stripping system during the CERN LINAC4 commissioning at 3 and 12 MeV | |
| RU2503024C2 (en) | METHOD TO CONTROL INTERNAL QUANTUM OUTPUT OF SEMICONDUCTOR LIGHT DIODE HETEROSTRUCTURES BASED ON GaN | |
| CN204348678U (en) | A kind of focused ion beam board with test function | |
| CN109449071B (en) | Pulse power driven high-brightness X-ray source | |
| CN206020600U (en) | High frequency method of photoconductivity decay measurement carrier lifetime tester | |
| CN106370994A (en) | High-frequency photoconductivity decay method charge carrier life tester | |
| CN210534193U (en) | Sampling inspection test fixture for direct-insertion rectifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181218 |