CN106370994A - High-frequency photoconductivity decay method charge carrier life tester - Google Patents

High-frequency photoconductivity decay method charge carrier life tester Download PDF

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Publication number
CN106370994A
CN106370994A CN201610816544.4A CN201610816544A CN106370994A CN 106370994 A CN106370994 A CN 106370994A CN 201610816544 A CN201610816544 A CN 201610816544A CN 106370994 A CN106370994 A CN 106370994A
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CN
China
Prior art keywords
photoconductivity decay
sample
high frequency
bogey
carrier lifetime
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Pending
Application number
CN201610816544.4A
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Chinese (zh)
Inventor
赵昭
于利红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronic Industrial Standardization Institute Ministry Of Industry And Information Technology Of People's Republic Of China
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Electronic Industrial Standardization Institute Ministry Of Industry And Information Technology Of People's Republic Of China
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Application filed by Electronic Industrial Standardization Institute Ministry Of Industry And Information Technology Of People's Republic Of China filed Critical Electronic Industrial Standardization Institute Ministry Of Industry And Information Technology Of People's Republic Of China
Priority to CN201610816544.4A priority Critical patent/CN106370994A/en
Publication of CN106370994A publication Critical patent/CN106370994A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor

Abstract

The invention discloses a high-frequency photoconductivity decay method charge carrier life tester. The high-frequency photoconductivity decay method charge carrier life tester comprises a bearing apparatus used for placing a sample to be tested; a test apparatus which is arranged above the bearing apparatus, comprises a high-frequency system and a pulse laser system and can test the sample on the bearing apparatus by use of a high-frequency photoconductivity decay method; and a signal acquisition processing apparatus which is connected with the high-frequency system in the test apparatus and is used for receiving and processing photoconductivity decay signals generated during detection of the sample. The high-frequency photoconductivity decay method principle employed by the tester is based on a capacitive coupling mode, the accuracy is high, at the same time, the method does not need to cut the sample, and the measurement is simple and fast.

Description

High frequency method of photoconductivity decay measurement carrier lifetime tester
Technical field
The present invention relates to carrier lifetime field tests, more particularly, to a kind of high frequency method of photoconductivity decay measurement carrier lifetime survey Examination instrument.
Background technology
Minority carrier lifetime is an important parameter of semi-conducting material, and the minority carrier lifetime of semi-conducting material is not The quality of semi-conducting material only can be characterized, the quality control in device manufacturing processes, integrated circuit company profit can also be evaluated Characterize the metal contamination degree of technical process with carrier lifetime, and study the reason cause device performance to decline.Therefore, with The development of integrated circuit technology, the semi-conducting material and device research institute measurement requirement more and more higher to carrier lifetime.
Carrier recombination lifetime tester is the important tool in semi-conducting material and device research and production.Existing at present Multiple carrier recombination lifetime test instrunments, such as direct current photoconduction life-span tester etc..But in existing life-span tester, mostly Number can only be tested the carrier lifetime it is impossible to bulk semiconductor crystalline material to the regional area of semiconductor crystalline material Distribution situation measure, and the measured area of semiconductor crystalline material is more big then more more complete can more realistically reflect material Quality.
Content of the invention
It is an object of the invention to provide a kind of measurement range is big, low cost, measure the accurate high frequency method of photoconductivity decay measurement Carrier lifetime tester.
A kind of concrete technical scheme of high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention is:
A kind of high frequency method of photoconductivity decay measurement carrier lifetime tester, comprising: bogey, for putting testing sample; Test device, is arranged on the top of bogey, including radio frequency system and pulse laser system, available high frequency photoconductivity decay Method detects to the sample on bogey;Signal acquisition and processing apparatus, are connected with the radio frequency system in test device, are used for Receive, process the photoconductivity decay signal producing during sample detection.
Further, bogey is connected with horizontally moving device, and horizontally moving device can control bogey in level side Movement upwards.
Further, test device is connected with vertical shift device, and vertical shift device controllable testing device is in vertically side Movement upwards.
Further, the radio frequency system in test device adopts the sine wave that output frequency is 30mhz, and frequency error is less than 10-4, output is more than 1w.
Further, the pulse laser system in test device is using the light-pulse generator that can run through sample, pulsed light The turn-off time in source is less than the half of testing sample life value.
The advantage of the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention is:
1) high frequency method of photoconductivity decay measurement principle is based on capacity coupled mode, and accuracy is high, and the method does not need simultaneously Cutting sample, measurement is simple, convenient and rapid.
2) bogey is connected with horizontally moving device, and test device is connected with vertical shift device, can make bogey (include horizontal and vertical) in the horizontal direction above to move, test device in the vertical direction moves, and expands detection range.
Brief description
Fig. 1 is the schematic diagram of the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention.
Specific embodiment
In order to be better understood by the purpose of the present invention, structure and function, below in conjunction with the accompanying drawings, a kind of high frequency to the present invention Method of photoconductivity decay measurement carrier lifetime tester does further detailed description.
As shown in figure 1, the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention includes: test device 1, carrying Device 2, vertical shift device 3, horizontally moving device 4 and signal acquisition and processing apparatus 5.Wherein, bogey 2 is treated for storing Test sample product;Test device 1 is arranged on the top of bogey 2, including pulse laser system and radio frequency system, available high frequency light Photoconductive decay method detects to the testing sample on bogey 2.It should be noted that the radio frequency system in test device requires Output frequency is the sine wave of 30mhz, and frequency error is less than 10-4, output is more than 1w;Pulse laser system will select properly Wavelength light source can reduce the impact of surface recombination, light source can run through sample, and the turn-off time of light-pulse generator should be less than The half of surveyed life value or less, for silicon materials, photon energy energy within 1.0 μm~1.1 μm for the optical source wavelength scope Ensure to inspire nonequilibrium carrier in vivo.
Further, test device 1 is connected with vertical shift device 3, and vertical shift device 3 controllable testing device 1 is perpendicular Nogata movement upwards, bogey 2 is connected with horizontally moving device 4, and horizontally moving device 4 can control bogey 2 in water Movement square on (include horizontal and vertical).It should be noted that vertical shift device and horizontally moving device can be using straight Stream brushless servo motor, is designed with pulse codr at each direct current brushless servo motor, in direct current brushless servo motor motion When, pulse codr produces pulse, these pulse feedback to test control system, and test control system is counted to these pulses Number, and in real time currently practical umber of pulse is compared with the umber of pulse setting, just carry out motion compensation once gap occurs, Thus realizing being accurately positioned.
Further, signal acquisition and processing apparatus 5 are connected with the radio frequency system in test device 1, for receiving, processing sample The photoconductivity decay signal producing during detection.Wherein, signal acquisition and processing apparatus 5 can adopt existing version, such as signal It is provided with the assemblies such as signal amplifier, signal adapter in acquisition processing device, photoconductivity decay signal is amplified and changes For exporting after digital signal, for example, in conjunction with existing computer equipment, measurement result can be exported with scattergram form.
The principle of the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention is:
Measurement when, radio frequency system produce 30mhz about sine wave, be added in the two ends of sample, pulse laser system Produce laser, be irradiated on sample, in sample, produce nonequilibrium carrier, its electrical conductivity increases, the resistance of sample simultaneously Reduce, therefore the high frequency voltage value at sample two ends declines so that the high-frequency signal at sample two ends is modulated.Wherein, in order to change The effect of kind measurement, spreads water between sample and electrode, to increase coupling between the two.
After stopping illumination, the nonequilibrium carrier in sample is exponentially decayed, and is gradually combined and disappears, sample two Terminal voltage amplitude gradually returns to level during no light, so the operation principle of high frequency photoconductivity decay is just as amplitude modulation broadcasting, because This can be demodulated from Amplitude Modulation High Frequency ripple using being demodulated to high frequency light conductance signal with AM receiver identical principle Photoconductivity decay signal very little, need to be acquired through signal acquisition and processing apparatus, amplify, demodulation process.
High frequency method of photoconductivity decay measurement principle in the present invention is based on capacity coupled mode, and accuracy is high, this side simultaneously Method does not need cutting sample, and measurement is simple, convenient and rapid.It is moreover observed that, the various modules being previously mentioned in the present invention, circuit are equal Be by hard-wired circuit although some of which module, circuit are integrated with software, but the present invention claimed be integrated soft The hardware circuit of the corresponding function of part, and it is not only software itself.
By specific embodiment, the present invention has been done above further describe it should be understood that, here specifically Description, should not be construed as the restriction to the spirit and scope of the invention, and one of ordinary skilled in the art is reading this explanation The various modifications after book, above-described embodiment made, broadly fall into the scope that the present invention is protected.

Claims (5)

1. a kind of high frequency method of photoconductivity decay measurement carrier lifetime tester is it is characterised in that include:
Bogey, for putting testing sample;
Test device, is arranged on the top of bogey, including radio frequency system and pulse laser system, available high frequency photoconduction Damped method detects to the sample on bogey;
Signal acquisition and processing apparatus, be connected with the radio frequency system in test device, produces during sample detection for receiving, processing Photoconductivity decay signal.
2. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that bogey It is connected with horizontally moving device, horizontally moving device can control bogey movement in the horizontal direction.
3. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that test device It is connected with vertical shift device, the movement of vertical shift device controllable testing device in the vertical direction.
4. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that test device In radio frequency system adopt output frequency be 30mhz sine wave, frequency error be less than 10-4, output is more than 1w.
5. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that test device In pulse laser system using the light-pulse generator that can run through sample, the turn-off time of light-pulse generator is less than testing sample The half of life value.
CN201610816544.4A 2016-09-12 2016-09-12 High-frequency photoconductivity decay method charge carrier life tester Pending CN106370994A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610816544.4A CN106370994A (en) 2016-09-12 2016-09-12 High-frequency photoconductivity decay method charge carrier life tester

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Application Number Priority Date Filing Date Title
CN201610816544.4A CN106370994A (en) 2016-09-12 2016-09-12 High-frequency photoconductivity decay method charge carrier life tester

Publications (1)

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CN106370994A true CN106370994A (en) 2017-02-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107192933A (en) * 2017-05-10 2017-09-22 西安工业大学 A kind of semi-conducting material carrier useful life measuring method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002006800A2 (en) * 2000-07-14 2002-01-24 Midwest Research Institute Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials
CN101702004A (en) * 2009-11-09 2010-05-05 厦门大学 Solar battery material minority carrier lifetime tester
CN102914502A (en) * 2012-11-21 2013-02-06 厦门大学 Non-contact nondestructive tester for semiconductor material minority carrier lifetime
CN103969263A (en) * 2014-06-04 2014-08-06 哈尔滨工业大学 Minority carrier lifetime tester based on high-frequency photoconduction attenuation
CN104266960A (en) * 2014-10-09 2015-01-07 广州市昆德科技有限公司 Carrier recombination lifetime test system adopting scanning type microwave reflection method and test method
CN206020600U (en) * 2016-09-12 2017-03-15 工业和信息化部电子工业标准化研究院 High frequency method of photoconductivity decay measurement carrier lifetime tester

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002006800A2 (en) * 2000-07-14 2002-01-24 Midwest Research Institute Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials
CN101702004A (en) * 2009-11-09 2010-05-05 厦门大学 Solar battery material minority carrier lifetime tester
CN102914502A (en) * 2012-11-21 2013-02-06 厦门大学 Non-contact nondestructive tester for semiconductor material minority carrier lifetime
CN103969263A (en) * 2014-06-04 2014-08-06 哈尔滨工业大学 Minority carrier lifetime tester based on high-frequency photoconduction attenuation
CN104266960A (en) * 2014-10-09 2015-01-07 广州市昆德科技有限公司 Carrier recombination lifetime test system adopting scanning type microwave reflection method and test method
CN206020600U (en) * 2016-09-12 2017-03-15 工业和信息化部电子工业标准化研究院 High frequency method of photoconductivity decay measurement carrier lifetime tester

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107192933A (en) * 2017-05-10 2017-09-22 西安工业大学 A kind of semi-conducting material carrier useful life measuring method
CN107192933B (en) * 2017-05-10 2019-07-23 西安工业大学 A kind of semiconductor material carrier useful life measurement method

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