CN106370994A - High-frequency photoconductivity decay method charge carrier life tester - Google Patents
High-frequency photoconductivity decay method charge carrier life tester Download PDFInfo
- Publication number
- CN106370994A CN106370994A CN201610816544.4A CN201610816544A CN106370994A CN 106370994 A CN106370994 A CN 106370994A CN 201610816544 A CN201610816544 A CN 201610816544A CN 106370994 A CN106370994 A CN 106370994A
- Authority
- CN
- China
- Prior art keywords
- photoconductivity decay
- sample
- high frequency
- bogey
- carrier lifetime
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002800 charge carrier Substances 0.000 title abstract 3
- 238000012360 testing method Methods 0.000 claims abstract description 33
- 238000005259 measurement Methods 0.000 claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims abstract description 5
- 230000033001 locomotion Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002178 crystalline material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a high-frequency photoconductivity decay method charge carrier life tester. The high-frequency photoconductivity decay method charge carrier life tester comprises a bearing apparatus used for placing a sample to be tested; a test apparatus which is arranged above the bearing apparatus, comprises a high-frequency system and a pulse laser system and can test the sample on the bearing apparatus by use of a high-frequency photoconductivity decay method; and a signal acquisition processing apparatus which is connected with the high-frequency system in the test apparatus and is used for receiving and processing photoconductivity decay signals generated during detection of the sample. The high-frequency photoconductivity decay method principle employed by the tester is based on a capacitive coupling mode, the accuracy is high, at the same time, the method does not need to cut the sample, and the measurement is simple and fast.
Description
Technical field
The present invention relates to carrier lifetime field tests, more particularly, to a kind of high frequency method of photoconductivity decay measurement carrier lifetime survey
Examination instrument.
Background technology
Minority carrier lifetime is an important parameter of semi-conducting material, and the minority carrier lifetime of semi-conducting material is not
The quality of semi-conducting material only can be characterized, the quality control in device manufacturing processes, integrated circuit company profit can also be evaluated
Characterize the metal contamination degree of technical process with carrier lifetime, and study the reason cause device performance to decline.Therefore, with
The development of integrated circuit technology, the semi-conducting material and device research institute measurement requirement more and more higher to carrier lifetime.
Carrier recombination lifetime tester is the important tool in semi-conducting material and device research and production.Existing at present
Multiple carrier recombination lifetime test instrunments, such as direct current photoconduction life-span tester etc..But in existing life-span tester, mostly
Number can only be tested the carrier lifetime it is impossible to bulk semiconductor crystalline material to the regional area of semiconductor crystalline material
Distribution situation measure, and the measured area of semiconductor crystalline material is more big then more more complete can more realistically reflect material
Quality.
Content of the invention
It is an object of the invention to provide a kind of measurement range is big, low cost, measure the accurate high frequency method of photoconductivity decay measurement
Carrier lifetime tester.
A kind of concrete technical scheme of high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention is:
A kind of high frequency method of photoconductivity decay measurement carrier lifetime tester, comprising: bogey, for putting testing sample;
Test device, is arranged on the top of bogey, including radio frequency system and pulse laser system, available high frequency photoconductivity decay
Method detects to the sample on bogey;Signal acquisition and processing apparatus, are connected with the radio frequency system in test device, are used for
Receive, process the photoconductivity decay signal producing during sample detection.
Further, bogey is connected with horizontally moving device, and horizontally moving device can control bogey in level side
Movement upwards.
Further, test device is connected with vertical shift device, and vertical shift device controllable testing device is in vertically side
Movement upwards.
Further, the radio frequency system in test device adopts the sine wave that output frequency is 30mhz, and frequency error is less than
10-4, output is more than 1w.
Further, the pulse laser system in test device is using the light-pulse generator that can run through sample, pulsed light
The turn-off time in source is less than the half of testing sample life value.
The advantage of the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention is:
1) high frequency method of photoconductivity decay measurement principle is based on capacity coupled mode, and accuracy is high, and the method does not need simultaneously
Cutting sample, measurement is simple, convenient and rapid.
2) bogey is connected with horizontally moving device, and test device is connected with vertical shift device, can make bogey
(include horizontal and vertical) in the horizontal direction above to move, test device in the vertical direction moves, and expands detection range.
Brief description
Fig. 1 is the schematic diagram of the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention.
Specific embodiment
In order to be better understood by the purpose of the present invention, structure and function, below in conjunction with the accompanying drawings, a kind of high frequency to the present invention
Method of photoconductivity decay measurement carrier lifetime tester does further detailed description.
As shown in figure 1, the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention includes: test device 1, carrying
Device 2, vertical shift device 3, horizontally moving device 4 and signal acquisition and processing apparatus 5.Wherein, bogey 2 is treated for storing
Test sample product;Test device 1 is arranged on the top of bogey 2, including pulse laser system and radio frequency system, available high frequency light
Photoconductive decay method detects to the testing sample on bogey 2.It should be noted that the radio frequency system in test device requires
Output frequency is the sine wave of 30mhz, and frequency error is less than 10-4, output is more than 1w;Pulse laser system will select properly
Wavelength light source can reduce the impact of surface recombination, light source can run through sample, and the turn-off time of light-pulse generator should be less than
The half of surveyed life value or less, for silicon materials, photon energy energy within 1.0 μm~1.1 μm for the optical source wavelength scope
Ensure to inspire nonequilibrium carrier in vivo.
Further, test device 1 is connected with vertical shift device 3, and vertical shift device 3 controllable testing device 1 is perpendicular
Nogata movement upwards, bogey 2 is connected with horizontally moving device 4, and horizontally moving device 4 can control bogey 2 in water
Movement square on (include horizontal and vertical).It should be noted that vertical shift device and horizontally moving device can be using straight
Stream brushless servo motor, is designed with pulse codr at each direct current brushless servo motor, in direct current brushless servo motor motion
When, pulse codr produces pulse, these pulse feedback to test control system, and test control system is counted to these pulses
Number, and in real time currently practical umber of pulse is compared with the umber of pulse setting, just carry out motion compensation once gap occurs,
Thus realizing being accurately positioned.
Further, signal acquisition and processing apparatus 5 are connected with the radio frequency system in test device 1, for receiving, processing sample
The photoconductivity decay signal producing during detection.Wherein, signal acquisition and processing apparatus 5 can adopt existing version, such as signal
It is provided with the assemblies such as signal amplifier, signal adapter in acquisition processing device, photoconductivity decay signal is amplified and changes
For exporting after digital signal, for example, in conjunction with existing computer equipment, measurement result can be exported with scattergram form.
The principle of the high frequency method of photoconductivity decay measurement carrier lifetime tester of the present invention is:
Measurement when, radio frequency system produce 30mhz about sine wave, be added in the two ends of sample, pulse laser system
Produce laser, be irradiated on sample, in sample, produce nonequilibrium carrier, its electrical conductivity increases, the resistance of sample simultaneously
Reduce, therefore the high frequency voltage value at sample two ends declines so that the high-frequency signal at sample two ends is modulated.Wherein, in order to change
The effect of kind measurement, spreads water between sample and electrode, to increase coupling between the two.
After stopping illumination, the nonequilibrium carrier in sample is exponentially decayed, and is gradually combined and disappears, sample two
Terminal voltage amplitude gradually returns to level during no light, so the operation principle of high frequency photoconductivity decay is just as amplitude modulation broadcasting, because
This can be demodulated from Amplitude Modulation High Frequency ripple using being demodulated to high frequency light conductance signal with AM receiver identical principle
Photoconductivity decay signal very little, need to be acquired through signal acquisition and processing apparatus, amplify, demodulation process.
High frequency method of photoconductivity decay measurement principle in the present invention is based on capacity coupled mode, and accuracy is high, this side simultaneously
Method does not need cutting sample, and measurement is simple, convenient and rapid.It is moreover observed that, the various modules being previously mentioned in the present invention, circuit are equal
Be by hard-wired circuit although some of which module, circuit are integrated with software, but the present invention claimed be integrated soft
The hardware circuit of the corresponding function of part, and it is not only software itself.
By specific embodiment, the present invention has been done above further describe it should be understood that, here specifically
Description, should not be construed as the restriction to the spirit and scope of the invention, and one of ordinary skilled in the art is reading this explanation
The various modifications after book, above-described embodiment made, broadly fall into the scope that the present invention is protected.
Claims (5)
1. a kind of high frequency method of photoconductivity decay measurement carrier lifetime tester is it is characterised in that include:
Bogey, for putting testing sample;
Test device, is arranged on the top of bogey, including radio frequency system and pulse laser system, available high frequency photoconduction
Damped method detects to the sample on bogey;
Signal acquisition and processing apparatus, be connected with the radio frequency system in test device, produces during sample detection for receiving, processing
Photoconductivity decay signal.
2. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that bogey
It is connected with horizontally moving device, horizontally moving device can control bogey movement in the horizontal direction.
3. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that test device
It is connected with vertical shift device, the movement of vertical shift device controllable testing device in the vertical direction.
4. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that test device
In radio frequency system adopt output frequency be 30mhz sine wave, frequency error be less than 10-4, output is more than 1w.
5. high frequency method of photoconductivity decay measurement carrier lifetime tester according to claim 1 is it is characterised in that test device
In pulse laser system using the light-pulse generator that can run through sample, the turn-off time of light-pulse generator is less than testing sample
The half of life value.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610816544.4A CN106370994A (en) | 2016-09-12 | 2016-09-12 | High-frequency photoconductivity decay method charge carrier life tester |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610816544.4A CN106370994A (en) | 2016-09-12 | 2016-09-12 | High-frequency photoconductivity decay method charge carrier life tester |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106370994A true CN106370994A (en) | 2017-02-01 |
Family
ID=57899575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610816544.4A Pending CN106370994A (en) | 2016-09-12 | 2016-09-12 | High-frequency photoconductivity decay method charge carrier life tester |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106370994A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107192933A (en) * | 2017-05-10 | 2017-09-22 | 西安工业大学 | A kind of semi-conducting material carrier useful life measuring method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002006800A2 (en) * | 2000-07-14 | 2002-01-24 | Midwest Research Institute | Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
CN101702004A (en) * | 2009-11-09 | 2010-05-05 | 厦门大学 | Solar battery material minority carrier lifetime tester |
CN102914502A (en) * | 2012-11-21 | 2013-02-06 | 厦门大学 | Non-contact nondestructive tester for semiconductor material minority carrier lifetime |
CN103969263A (en) * | 2014-06-04 | 2014-08-06 | 哈尔滨工业大学 | Minority carrier lifetime tester based on high-frequency photoconduction attenuation |
CN104266960A (en) * | 2014-10-09 | 2015-01-07 | 广州市昆德科技有限公司 | Carrier recombination lifetime test system adopting scanning type microwave reflection method and test method |
CN206020600U (en) * | 2016-09-12 | 2017-03-15 | 工业和信息化部电子工业标准化研究院 | High frequency method of photoconductivity decay measurement carrier lifetime tester |
-
2016
- 2016-09-12 CN CN201610816544.4A patent/CN106370994A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002006800A2 (en) * | 2000-07-14 | 2002-01-24 | Midwest Research Institute | Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
CN101702004A (en) * | 2009-11-09 | 2010-05-05 | 厦门大学 | Solar battery material minority carrier lifetime tester |
CN102914502A (en) * | 2012-11-21 | 2013-02-06 | 厦门大学 | Non-contact nondestructive tester for semiconductor material minority carrier lifetime |
CN103969263A (en) * | 2014-06-04 | 2014-08-06 | 哈尔滨工业大学 | Minority carrier lifetime tester based on high-frequency photoconduction attenuation |
CN104266960A (en) * | 2014-10-09 | 2015-01-07 | 广州市昆德科技有限公司 | Carrier recombination lifetime test system adopting scanning type microwave reflection method and test method |
CN206020600U (en) * | 2016-09-12 | 2017-03-15 | 工业和信息化部电子工业标准化研究院 | High frequency method of photoconductivity decay measurement carrier lifetime tester |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107192933A (en) * | 2017-05-10 | 2017-09-22 | 西安工业大学 | A kind of semi-conducting material carrier useful life measuring method |
CN107192933B (en) * | 2017-05-10 | 2019-07-23 | 西安工业大学 | A kind of semiconductor material carrier useful life measurement method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109061295B (en) | Near-field microwave resonator resonant frequency measurement system and method | |
CN109143121B (en) | Microwave field quantitative test system and method based on pulse modulation | |
US4015203A (en) | Contactless LSI junction leakage testing method | |
US7898280B2 (en) | Electrical characterization of semiconductor materials | |
CN102169022A (en) | Experiment method for pulsed laser single event upset cross section | |
CN104266960B (en) | Scan-type microwave reflection carrier recombination lifetime test system and method for testing | |
CN103543130B (en) | Method for eliminating system frequency response influence of semiconductor material characteristic measuring device in photocarrier radiation technology | |
KR102643912B1 (en) | Semiconductor surface condition carrier life test method | |
CN105637624A (en) | Method and apparatus for non-contact measurement of forward voltage, saturation current density, ideality factor and i-v curves in p-n junctions | |
CN106093596A (en) | The full measuring method of space charge of nanometer resolution can be realized | |
CN206020600U (en) | High frequency method of photoconductivity decay measurement carrier lifetime tester | |
CN106370994A (en) | High-frequency photoconductivity decay method charge carrier life tester | |
CN103969263A (en) | Minority carrier lifetime tester based on high-frequency photoconduction attenuation | |
CN113985240A (en) | Method, system and device for measuring transient radiation induced charge of semiconductor device | |
CN105527483A (en) | Transient photovoltage test system capable of realizing electro-optic independent modulation | |
CN111128783B (en) | Longitudinal distribution test system and method for minority carrier lifetime | |
CN102005400B (en) | Failure detection method and failure detection device | |
CN205353177U (en) | Transient state photovoltage test system that lightning was independently maked | |
CN106249122B (en) | The high frequency photoconduction life-span tester and its test method of controllable injection ratio | |
CN103439641A (en) | Surface photovoltage method based semiconductor material parameter testing device and testing method | |
CN110763434B (en) | Homogeneity detection device of polycrystalline silicon thin layer | |
CN104766809A (en) | PN node transient capacitance energy spectrum measuring method and system | |
CN106199368B (en) | Non-contact silicon-based photoelectric device minority carrier lifetime detector and detection method | |
CN204154617U (en) | Scan-type microwave reflection carrier recombination lifetime test macro | |
CN205404745U (en) | Testing arrangement and use this testing arrangement's tester |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170201 |