CN109004065A - A method of improving N-type double-side cell efficiency - Google Patents
A method of improving N-type double-side cell efficiency Download PDFInfo
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- CN109004065A CN109004065A CN201810845062.0A CN201810845062A CN109004065A CN 109004065 A CN109004065 A CN 109004065A CN 201810845062 A CN201810845062 A CN 201810845062A CN 109004065 A CN109004065 A CN 109004065A
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- Prior art keywords
- type double
- side cell
- heated
- efficiency
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000005611 electricity Effects 0.000 claims 3
- 230000008569 process Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of methods for improving N-type double-side cell efficiency, it is heated including the back side to N-type double-side cell, temperature is 500 DEG C to 560 DEG C, since the back side to N-type double-side cell is heated in this scheme, temperature is 500 DEG C to 560 DEG C, and the back side of battery is n-type region, it can generate bigger improved efficiency after being heated, therefore this method can be on the basis of simple process, the photoelectric conversion efficiency of raising battery by a larger margin, the front of the N-type double-side cell can also be heated simultaneously, temperature is 420 DEG C to 480 DEG C, preferably guarantee the uniformity of heating.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology fields, more particularly to a kind of side for improving N-type double-side cell efficiency
Method.
Background technique
Currently, energy crisis is just threaten the survival and development of the mankind, and compared with non-renewable fossil energy, solar energy
Resource has the advantages such as cleaning, renewable.Effective use of the people to solar energy resources may be implemented in solar battery.Many
Solar battery type in, crystal silicon solar energy battery industrialization level highest, application range are most wide, technology is the most mature,
Always develop one of more rapid solar cell types.
In silica-based solar cell, boron doped p-type battery has certain photo attenuation, and the decaying is by B-O pairs
Be affected, in contrast, the N-type cell of phosphorus doping is since boron content is less, there is lesser photo attenuation effect, together
When, it is had higher efficiency using battery prepared by N-type silicon chip, and the back side of double-side cell can be by absorbing nature
To improve battery efficiency, therefore N-type double-side cell as shown in Figure 1 can be used in reflected light, and Fig. 1 is the structure of N-type double-side cell
Schematic diagram, boron doped p type island region domain are located at battery front side, and battery front side uses SiNxAnd Al2O3Passivation, electrode material Ag-Al
Alloy, for the n-type region of phosphorus doping close to cell backside, cell backside uses SiNxAnd SiO2Passivation, using Ag electrode material,
Because of the otherness of Facad structure and backside structure, when carrying out the processing of similarity condition to battery front side and the back side, battery just meeting
With different responses.
In the prior art, the mode for improving battery efficiency is to carry out light recovery processing to N-type double-side cell, is exactly being heated
In the process, the lighting process of certain time and certain light intensity are carried out to its front, under this condition, battery efficiency has certain
It is promoted, but promotes limited extent.
Summary of the invention
To solve the above problems, can simply locate the present invention provides a kind of method for improving N-type double-side cell efficiency
On the basis of reason, the photoelectric conversion efficiency of raising battery by a larger margin.
A kind of method improving N-type double-side cell efficiency provided by the invention, carries out including the back side to N-type double-side cell
Heating, temperature are 500 DEG C to 560 DEG C.
Preferably, in the method for above-mentioned raising N-type double-side cell efficiency, further include to the N-type double-side cell just
Face is heated, and temperature is 420 DEG C to 480 DEG C.
Preferably, in the method for above-mentioned raising N-type double-side cell efficiency, the back side to the N-type double-side cell and just
Face is all made of infrared mode and is heated.
Preferably, in the method for above-mentioned raising N-type double-side cell efficiency, the N-type double-side cell is placed in chain type and is set
It is heated on standby.
Preferably, in the method for above-mentioned raising N-type double-side cell efficiency, by the back side up of the N-type double-side cell
It is placed on the chain equipment and is heated.
Preferably, in the method for above-mentioned raising N-type double-side cell efficiency, the back side of the N-type double-side cell is heated
Duration is 3 minutes to 5 minutes.
As can be seen from the above description, the method provided by the invention for improving N-type double-side cell efficiency, due to two-sided to N-type
The back side of battery is heated, and temperature is 500 DEG C to 560 DEG C, and the back side of battery is n-type region, can be generated after being heated
Bigger improved efficiency, therefore this method can be on the basis of simple process, the photoelectricity of raising battery by a larger margin turns
Change efficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the structural schematic diagram of N-type double-side cell；
Fig. 2 is the schematic diagram heated to the back side of N-type double-side cell.
Specific embodiment
Core of the invention thought is to provide a kind of method for improving N-type double-side cell efficiency, can be in simple process
On the basis of, the photoelectric conversion efficiency of raising battery by a larger margin.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The method of the first raising N-type double-side cell efficiency provided by the embodiments of the present application, including to N-type double-side cell
The back side is heated, and temperature is 500 DEG C to 560 DEG C.
With reference to Fig. 2, it is by N-type double-side cell here that Fig. 2, which is the schematic diagram heated to the back side of N-type double-side cell,
The back side upward, then heated using the first heater 2 in portion disposed thereon, this method do not need change battery
Manufacturing process only heats finished battery piece, has certain universality, used heating method is simultaneously
It does not limit, can be infrared heating, be also possible to the other modes such as thermal station heat transfer, on the other hand, which makes N-type double-side cell
Efficiency generates 0.4% raising, has great importance to the N-type double-sided solar battery of batch production.
As can be seen from the above description, the method for the first raising N-type double-side cell efficiency provided by the embodiments of the present application, by
It is heated in the back side to N-type double-side cell, temperature is 500 DEG C to 560 DEG C, and the back side of battery is n-type region, is added
Bigger improved efficiency can be generated after heat, therefore this method can be on the basis of simple process, raising by a larger margin is electric
The photoelectric conversion efficiency in pond.
The method of second of raising N-type double-side cell efficiency provided by the embodiments of the present application is in above-mentioned the first raising N
Further include following technical characteristic on the basis of the method for type double-side cell efficiency:
It further include being heated to the front of the N-type double-side cell, temperature is 420 DEG C to 480 DEG C.
With continued reference to Fig. 2, also using the lower part for being located at the N-type double-side cell secondary heating mechanism 3 to its front into
Row heating, it should be noted that can preferably prevent the positive back side excessive temperature differentials of battery using the mode of Double-side Heating and cause
The problem of cell piece damages in this scheme, is arranged that positive heating temperature is lower than the back side, this is also according to battery front and back sides
Depending on structure is different, because backside structure will appear efficiency enhancement effect more better than front under higher heating temperature.
The method provided by the embodiments of the present application that the third improves N-type double-side cell efficiency, is in above-mentioned second of raising N
Further include following technical characteristic on the basis of the method for type double-side cell efficiency:
The back side and front to the N-type double-side cell are all made of infrared mode and heat.
The infrared heating mode used in this preferred embodiment is more preferable than other heating method effects, can make the light of battery
Photoelectric transformation efficiency is greatly improved.
The method of 4th kind of raising N-type double-side cell efficiency provided by the embodiments of the present application is to improve N in above-mentioned the third
Further include following technical characteristic on the basis of the method for type double-side cell efficiency:
The N-type double-side cell is placed on chain equipment and is heated.
It include: guarantee production capacity the advantages of being heated to using this chain equipment, the chain equipment circulated can be protected
Demonstrate,prove the continual output of product；Matching automation, existing a variety of automation equipments are easier to match chain type technique；Guarantee temperature
Gradient uniformity, the continual inflow chain equipment of cell piece are spent, the temperature curve that each cell piece is passed through is consistent.
The method of 5th kind of raising N-type double-side cell efficiency provided by the embodiments of the present application, is in above-mentioned 4th kind of raising N
Further include following technical characteristic on the basis of the method for type double-side cell efficiency:
Back side up be placed on the chain equipment of the N-type double-side cell is heated.
It circulates it should be noted that cell piece is placed on the conveyer belt of chain equipment, upward using the back side
Scheme allows for is more advantageous to top heating rather than lower section heating in this way, thus makes cell backside heating temperature naturally
It is higher, it handles more convenient.
The method of 6th kind of raising N-type double-side cell efficiency provided by the embodiments of the present application, be it is above-mentioned the first to the
Five kinds raising N-type double-side cell efficiency method in it is any on the basis of, further include following technical characteristic:
The time heating and continuous to the back side of the N-type double-side cell is 3 minutes to 5 minutes.
This duration of heat can be realized by setting conveyor belt speed, further, can be preferably
Heating and continuous 4.5 minutes.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (6)
1. a kind of method for improving N-type double-side cell efficiency, which is characterized in that heated to the back side of N-type double-side cell, temperature
Degree is 500 DEG C to 560 DEG C.
2. the method according to claim 1 for improving N-type double-side cell efficiency, which is characterized in that further include to the N-type
The front of double-side cell is heated, and temperature is 420 DEG C to 480 DEG C.
3. the method according to claim 2 for improving N-type double-side cell efficiency, which is characterized in that the two-sided electricity of the N-type
The back side and front in pond are all made of infrared mode and are heated.
4. the method according to claim 3 for improving N-type double-side cell efficiency, which is characterized in that by the two-sided electricity of the N-type
Pond is placed on chain equipment and is heated.
5. the method according to claim 4 for improving N-type double-side cell efficiency, which is characterized in that by the two-sided electricity of the N-type
Back side up be placed on the chain equipment in pond is heated.
6. the method according to claim 1-5 for improving N-type double-side cell efficiency, which is characterized in that the N
The back side of the type double-side cell heating and continuous time is 3 minutes to 5 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810845062.0A CN109004065B (en) | 2018-07-27 | 2018-07-27 | A method of improving N-type double-side cell efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810845062.0A CN109004065B (en) | 2018-07-27 | 2018-07-27 | A method of improving N-type double-side cell efficiency |
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| Publication Number | Publication Date |
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| CN109004065A true CN109004065A (en) | 2018-12-14 |
| CN109004065B CN109004065B (en) | 2019-11-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416020A (en) * | 2020-04-03 | 2020-07-14 | 晶科能源科技（海宁）有限公司 | Method for improving efficiency of N-type single crystal cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011149615A3 (en) * | 2010-05-24 | 2012-02-02 | Applied Materials, Inc. | Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus |
| CN104795469A (en) * | 2015-04-25 | 2015-07-22 | 北京金晟阳光科技有限公司 | Roller-way-type solar cell irradiation annealing furnace |
| CN204558429U (en) * | 2015-05-13 | 2015-08-12 | 浙江晶科能源有限公司 | A kind of device reducing photo attenuation |
| CN106711285A (en) * | 2016-12-28 | 2017-05-24 | 东方环晟光伏（江苏）有限公司 | Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof |
-
2018
- 2018-07-27 CN CN201810845062.0A patent/CN109004065B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011149615A3 (en) * | 2010-05-24 | 2012-02-02 | Applied Materials, Inc. | Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus |
| CN104795469A (en) * | 2015-04-25 | 2015-07-22 | 北京金晟阳光科技有限公司 | Roller-way-type solar cell irradiation annealing furnace |
| CN204558429U (en) * | 2015-05-13 | 2015-08-12 | 浙江晶科能源有限公司 | A kind of device reducing photo attenuation |
| CN106711285A (en) * | 2016-12-28 | 2017-05-24 | 东方环晟光伏（江苏）有限公司 | Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416020A (en) * | 2020-04-03 | 2020-07-14 | 晶科能源科技（海宁）有限公司 | Method for improving efficiency of N-type single crystal cell |
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| CN109004065B (en) | 2019-11-29 |
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