CN109004036A - Photoelectric cell packaging body - Google Patents
Photoelectric cell packaging body Download PDFInfo
- Publication number
- CN109004036A CN109004036A CN201711445211.6A CN201711445211A CN109004036A CN 109004036 A CN109004036 A CN 109004036A CN 201711445211 A CN201711445211 A CN 201711445211A CN 109004036 A CN109004036 A CN 109004036A
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- China
- Prior art keywords
- photoelectric cell
- layer
- packaging body
- cell packaging
- dielectric layer
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- Granted
Links
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
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- 230000005496 eutectics Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- HURSIASBWGCKKE-UHFFFAOYSA-N naphthalene naphthalene-1-carboxylic acid Chemical compound C1(=CC=CC2=CC=CC=C12)C(=O)O.C1=CC=CC2=CC=CC=C12 HURSIASBWGCKKE-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of photoelectric cell packaging bodies comprising substrate, first line layer, bearing structure, the second line layer, at least one photoelectric cell and the first encapsulated layer.First line layer is located on substrate.Bearing structure is located on substrate and covers first line layer.Bearing structure includes the first dielectric layer, elastic layer and the second dielectric layer.Elastic layer is between the first dielectric layer and the second dielectric layer.The Young's modulus of elastic layer is less than the Young's modulus of the first dielectric layer and the Young's modulus of the second dielectric layer.Second line layer is located in bearing structure.Photoelectric cell is located in bearing structure, and photoelectric cell is electrically connected to first line layer and the second line layer.First encapsulated layer is located in bearing structure and encapsulates photoelectric cell.
Description
Technical field
The present invention relates to electronic package field, in particular to a kind of photoelectric cell packaging body.
Background technique
In general flexible electronic product, usually on flexible substrates by electronic component configuration, sealed again later
Dress.However, the flexible electronic product that manner described above is constituted, in manufacturing process or in use, may be because of electronics
Element is damaged by stress, and then influences the quality of flexible electronic product.How the stress that is applied to electronic component is reduced, and
The yield of flexible electronic product and the reliability of product are promoted, has become current project to be solved in fact.
Summary of the invention
In order to solve the above-mentioned technical problem, one embodiment of the invention is designed to provide a kind of photoelectric cell packaging body,
Including:
First line layer is located on first substrate；
Bearing structure on the first substrate and covers the first line layer, the bearing structure include the first dielectric layer,
Elastic layer and the second dielectric layer, wherein the elastic layer is located between first dielectric layer and second dielectric layer, and the elasticity
The Young's modulus of layer is less than the Young's modulus of first dielectric layer and the Young's modulus of second dielectric layer；
Second line layer is located in the bearing structure；
At least one photoelectric cell is located in the bearing structure, and this photoelectric cell is electrically connected to the first line layer
With second line layer；And
First encapsulated layer in the bearing structure and encapsulates this photoelectric cell.
In one embodiment, the photoelectric cell packaging body further includes at least one via hole, at least runs through the bearing structure
The elastic layer and second dielectric layer, and the photoelectric cell is electrically connected to the first line layer by the via hole.
In one embodiment, the photoelectric cell packaging body, wherein the first substrate includes multiple base openings, and this first
Dielectric layer or second dielectric layer and the base openings are not be overlapped.
In one embodiment, the photoelectric cell packaging body, wherein the elastic layer is filled in the base openings.
In one embodiment, the photoelectric cell packaging body, wherein first dielectric layer has multiple first grooves, and the bullet
Property layer is filled in the first groove.
In one embodiment, the photoelectric cell packaging body, wherein second dielectric layer has multiple second grooves.
In one embodiment, the photoelectric cell packaging body further includes at least one light guide structure, is located in the bearing structure
And the photoelectric cell is surrounded, and first encapsulated layer is filled in the region that the light guide structure is surrounded.
In one embodiment, the photoelectric cell packaging body, wherein the light guide structure at least has first surface, second surface
And third surface, wherein the first surface is towards the bearing structure, and the second surface is towards the photoelectric cell, and second table
Face is connected to the first surface and the third surface.
In one embodiment, the photoelectric cell packaging body, wherein the first surface and the third surface are non-conterminous, this first
The area on surface is greater than the area on the third surface, which includes an output optical zone, and the refractive index of the output optical zone is greater than
The refractive index of first encapsulated layer.
In one embodiment, the photoelectric cell packaging body, wherein the first surface and the third surface are non-conterminous, this first
The area on surface is less than the area on the third surface, which includes output optical zone, and the refractive index of the output optical zone is less than this
The refractive index of first encapsulated layer.
In one embodiment, the photoelectric cell packaging body, wherein first encapsulated layer is also covered on the third surface.
In one embodiment, the photoelectric cell packaging body, further includes reflecting layer, is located on first encapsulated layer and covering should
Third surface.
In one embodiment, the photoelectric cell packaging body, wherein the quantity of the photoelectric cell is multiple, first encapsulated layer
Including multiple first packed parts being separated from each other, and each first packed part coats the corresponding photoelectric cell.
In one embodiment, the photoelectric cell packaging body, wherein the quantity of the photoelectric cell is multiple, and first encapsulation
Layer also coats the photoelectric cell.
In one embodiment, the photoelectric cell packaging body further includes the second encapsulated layer, in the bearing structure and at least
First encapsulated layer is laterally covered, and the Young's modulus of first encapsulated layer is greater than the Young's modulus of second encapsulated layer.
In one embodiment, the photoelectric cell packaging body, wherein second encapsulated layer is also covered on first encapsulated layer.
In one embodiment, the photoelectric cell packaging body, wherein further include the second encapsulated layer, be located in the bearing structure and
The elastic layer is contacted, and the Young's modulus of first encapsulated layer is greater than the Young's modulus of second encapsulated layer.
In one embodiment, the photoelectric cell packaging body, further includes the second substrate, wherein the first line layer, the carrying
Structure, second line layer, the photoelectric cell and first encapsulated layer are located between the first substrate and the second substrate.
In one embodiment, the photoelectric cell packaging body, wherein the bearing structure further includes at least one active member, should
Active member includes source electrode, drain and gate, which is electrically connected with the first line layer.
In one embodiment, the photoelectric cell packaging body, further includes at least one scan line and at least one data line,
The scan line is electrically connected with the gate, which is electrically connected with the source electrode.
One embodiment of the invention provides a kind of photoelectric cell packaging body, and bearing structure can be formed in packaging body stress and be answered
Power absorbs or the effect of buffering, to reduce the stress being applied at carrying photoelectric cell, and can promote photoelectric cell packaging body
Resist bending ability.
Detailed description of the invention
Figure 1A to Fig. 1 H is the part section according to the manufacturing process of the photoelectric cell packaging body of first embodiment of the invention
Schematic diagram；
Fig. 1 I is the local overlooking schematic diagram according to the photoelectric cell packaging body of first embodiment of the invention；
Fig. 1 J is the enlarged diagram of region R1 in Fig. 1 H；
Fig. 2A is the partial cutaway schematic according to the photoelectric cell packaging body of second embodiment of the invention；
Fig. 2 B is the enlarged diagram of region R2 in Fig. 2A；
Fig. 3 is the partial cutaway schematic according to the photoelectric cell packaging body of third embodiment of the invention；
Fig. 4 is the partial cutaway schematic according to the photoelectric cell packaging body of fourth embodiment of the invention；
Fig. 5 is the partial cutaway schematic according to the photoelectric cell packaging body of fifth embodiment of the invention；
Fig. 6 is the partial cutaway schematic according to the photoelectric cell packaging body of sixth embodiment of the invention；
Fig. 7 is the partial cutaway schematic according to the photoelectric cell packaging body of seventh embodiment of the invention；
Fig. 8 is the partial cutaway schematic according to the photoelectric cell packaging body of eighth embodiment of the invention；
Fig. 9 is the partial cutaway schematic according to the photoelectric cell packaging body of ninth embodiment of the invention；
Figure 10 is the partial cutaway schematic according to the photoelectric cell packaging body of tenth embodiment of the invention；
Figure 11 is the partial cutaway schematic according to the photoelectric cell packaging body of eleventh embodiment of the invention；
Figure 12 is the partial cutaway schematic according to the photoelectric cell packaging body of twelveth embodiment of the invention；
Figure 13 is the partial cutaway schematic according to the photoelectric cell packaging body of thriteenth embodiment of the invention；
Figure 14 is the partial cutaway schematic according to the photoelectric cell packaging body of fourteenth embodiment of the invention；
Figure 15 is the partial cutaway schematic according to the photoelectric cell packaging body of fifteenth embodiment of the invention；
Figure 16 is the partial cutaway schematic according to the photoelectric cell packaging body of sixteenth embodiment of the invention；
Figure 17 is the partial cutaway schematic according to the photoelectric cell packaging body of seventeenth embodiment of the invention；
Figure 18 is the partial cutaway schematic according to the photoelectric cell packaging body of eighteenth embodiment of the invention；
Figure 19 is the partial cutaway schematic according to the photoelectric cell packaging body of nineteenth embodiment of the invention；
Figure 20 is the partial cutaway schematic according to the photoelectric cell packaging body of twentieth embodiment of the invention；
Figure 21 is the partial cutaway schematic according to the photoelectric cell packaging body of 21st embodiment of the invention；
Figure 22 A is the local overlooking schematic diagram according to the photoelectric cell packaging body of 22nd embodiment of the invention；
Figure 22 B is the partial cutaway schematic according to the photoelectric cell packaging body of 22nd embodiment of the invention；
Figure 23 is the partial cutaway schematic according to the photoelectric cell packaging body of 23th embodiment of the invention；
Figure 24 is the partial cutaway schematic according to the photoelectric cell packaging body of 24th embodiment of the invention；
Figure 25 is the partial cutaway schematic according to the photoelectric cell packaging body of 25th embodiment of the invention；
Figure 26 is the partial cutaway schematic according to the photoelectric cell packaging body of 26th embodiment of the invention；
Figure 27 is the partial cutaway schematic according to the photoelectric cell packaging body of 27th embodiment of the invention；
Figure 28 is the partial cutaway schematic according to the photoelectric cell packaging body of 28th embodiment of the invention；
Figure 29 is the partial cutaway schematic according to the photoelectric cell packaging body of 29th embodiment of the invention；
Figure 30 is the partial cutaway schematic according to the photoelectric cell packaging body of 30st embodiment of the invention；
Figure 31 is the partial cutaway schematic according to the photoelectric cell packaging body of 31nd embodiment of the invention.
Symbol description:
110,510: first substrate 510a: base openings
120: first line layer 130a: through hole
131,1731,1831,1931,2031,2131: the first dielectric layer 131a: first through hole
131b, 2031b, 2031b: first groove 132,632: elastic layer
131c, 2031c, 2031c', 2031c: first the 132a: the second through-hole of dielectric part
133, the 2033,2133b: the second dielectric layer 133a: third through-hole
133b, 2033b, 2133b: 140: the second line layer of second groove
133c, 2033c, 2133c, 2133c': the second dielectric part 141: via hole
160,260,860,1060: output optical zone 150: photoelectric cell
160a, 260a, 860a: first surface 260h: guide-lighting thickness
160b, 260b, 860b: second surface 481: heat conducting film
160c, 260c, 860c: third surface 482: thermal conductive wire
160d, 260d: the 4th surface 483: heat dissipation particle
161,261,861: light guide zone 784h: padded height
162,262,862,1062: 171: the first packed part of light guide structure
170a, 1570a: upper surface 170b, 1570b: side
175,1575: the second encapsulated layer 380,480: the second substrate
784,984: booster structure 1185: reflecting layer
2290: active member 2291: semiconductor layer
2291S: source area 2291C: channel region
2291D: drain area G: gate
2292,2392,2492: gate dielectric layer S: source electrode
D: drain SL: scan line
2293,2393,2493: passivation layer DL: data line
2294: the L1: the first light beam of buffer layer
L2, L2 ', the L2 ": second light beam PU: pixel unit
R1, R2: region
170,1270,1370,1470,1570,1670: the first encapsulated layer
130、630、1730、1830、1930、2030、2130、2230、2330、2430、2530、2630、2730、2830、
2930,3030,3130: bearing structure
100、200、300、400、500、600、700、800、900、1000、1100、1200、1300、1400、1500、
1600、1700、1800、1900、2000、2100、2200、2300、2400、2500、2600、2700、2800、2900、3000、
3100,3200: photoelectric cell packaging body
Specific embodiment
To allow features described above and effect of the invention that can illustrate more clearly understandable, special embodiment below, and cooperate
Bright book attached drawing is described in detail below.
Figure 1A to Fig. 1 H is the part section according to the manufacturing process of the photoelectric cell packaging body of first embodiment of the invention
Schematic diagram.Fig. 1 I is the local overlooking schematic diagram according to the photoelectric cell packaging body of first embodiment of the invention.Fig. 1 J is Fig. 1 H
The enlarged diagram of middle region R1.For clarity, Fig. 1 I omission is painted part film layer and component.
Figure 1A is please referred to, first substrate 110 is provided.In the present embodiment, first substrate 110 can be to penetrate with visible light
The hard substrate or flexible base board of property.For example, the material of hard substrate above-mentioned is, for example, glass or other hard materials,
And flexible substrate material above-mentioned is, for example, polyimide (polyimide；PI), polycarbonate (polycarbonate；PC),
Polyamide (polyamide；PA), polyethylene terephthalate (polyethylene terephthalate；PET), poly- naphthalene
Naphthalate (polyethylene naphthalate；PEN), polyethyleneimine (polyethylenimine；
PEI), polyurethane (polyurethane；PU), dimethyl silicone polymer (polydimethylsiloxane；PDMS), acryl
System's (acrylate) polymer is, for example, polymethyl methacrylate (polymethylmethacrylate；PMMA) etc., ether system
(ether) polymer is, for example, polyether sulfone (polyethersulfone；) or polyether-ether-ketone PES
(polyetheretherketone；PEEK) etc., polyene (polyolefin), metal foil (metal foil), thin glass or its
His flexible material, but the present invention is not limited thereto.
Then, in formation first line layer 120 on first substrate 110.It in the present embodiment, can be first in first substrate
One first conductive layer is formed on 110.And it is possible to by the patterning process such as lithography by the first conductive layer pattern, with
Form first line layer 120.The material of first line layer 120 can be transparent conductive material or opaque conductive material.It is above-mentioned
Transparent conductive material is, for example, indium tin oxide (indium tin oxide；ITO), indium-zinc oxide (indium zinc
oxide；IZO) etc., and opaque conductive material above-mentioned is, for example, metal, but invention is not limited thereto.
After forming first line layer 120, in forming the first dielectric layer 131 on first substrate 110.First dielectric layer
131 can be and are made of an inorganic material, it includes: silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), oxygen
Change aluminium (AlOx), aluminum oxynitride (AlON) or other similar object.In other embodiments, the first dielectric layer 131 can be by
One organic material is constituted, it includes: polyimide (polyimide；PI), polycarbonate (polycarbonate；PC), gather
Amide (polyamide；PA), polyethylene terephthalate (polyethylene terephthalate；PET), poly- naphthalene two
Formic acid glycol ester (polyethylene naphthalate；PEN), polyethyleneimine (polyethylenimine；PEI),
Polyurethane (polyurethane；PU), dimethyl silicone polymer (polydimethylsiloxane；PDMS), acryl system
(acrylate) polymer is, for example, polymethyl methacrylate (polymethylmethacrylate；PMMA) etc., ether system
(ether) polymer is, for example, polyether sulfone (polyethersulfone；) or polyether-ether-ketone PES
(polyetheretherketone；PEEK) etc., polyene (polyolefin) or other similar object or combinations thereof.It can in other
In capable embodiment, organic material and inorganic material can replace storehouse to form the first dielectric layer 131.
In the present embodiment, machine drilling (Mechanical drilling), laser drill (laser can be passed through
Drilling), etch process or other suitable processing procedures, in forming multiple first through hole 131a on the first dielectric layer 131.The
One through-hole 131a exposes the first line layer 120 of part, is led to that conductive materials can be inserted first in subsequent processing procedure
In the 131a of hole, and it is electrically connected first line layer 120 with other elements or film layer.
In the present embodiment, the first dielectric layer 131 can have multiple first groove 131b, and make the first dielectric layer 131
It can have multiple the first dielectric part 131c being separated from each other, however, the present invention is not limited thereto.In other embodiments, first is situated between
Electric layer 131 is also possible to comprehensively cover first substrate 110.
Figure 1B is please referred to, after forming the first dielectric layer 131, in formation elastic layer 132 on first substrate 110.Elasticity
The material of layer 132 includes the elastic material of insulation, and the Young's modulus (Young's modulus) of elastic layer 132 is less than first
The Young's modulus of dielectric layer 131.That is, the plasticity for compared to the first dielectric layer 131, after 132 stress of elastic layer
Deformation extent is larger.For example, the material of elastic layer 132 is, for example, hydrocarbon polymer (polymer) material for having chain structure
Material, such as rubber series glue material, acryl series glue material or silicon series glue material, wherein rubber series glue material includes natural rubber
Glue and synthetic rubber, acryl series glue material include standard acryl and improvement acryl.The forming method of elastic layer 132 is for example
It is rubbing method, bonding method, sol-gal process (Sol-Gel method) or pressing method.For example, elastic material is formed in
After on one substrate 110, photopolymerization (photopolymerization) can be carried out according to the property of elastic material or is toasted
(baking) processing procedure makes elastic material be solidified to form flexible elastic layer 132.In the present embodiment, the first dielectric layer
131 Young's modulus can be between 200 hundred million pa (gigapascals；GPa) to 450GPa, and the Young's modulus of elastic layer 132
It can be between 0.1 million pa (megapascals；MPa) to 40GPa, however, the present invention is not limited thereto.
In the present embodiment, can by machine drilling, laser drill, etch process or other suitable processing procedures, in
Multiple second through-hole 132a are formed on elastic layer 132.Second through-hole 132a corresponds to first through hole 131a, and the second through-hole 132a
The first line layer 120 that first through hole 131a is exposed is exposed, can insert conductive materials in subsequent processing procedure
In second through-hole 132a and first through hole 131a, and it is electrically connected first line layer 120 with other elements or film layer.
In the present embodiment, elastic layer 132 can be filled in the first groove 131b of the first dielectric layer 131.In other words
It says, the partial elastic layer 132 being filled in first groove 131b can be direct with first line layer 120 and/or first substrate 110
Contact.
Fig. 1 C is please referred to, after forming elastic layer 132, in forming the second dielectric layer 133 on first substrate 110.First
Dielectric layer 131, elastic layer 132 and the second dielectric layer 133 may be constructed bearing structure 130.The material of second dielectric layer 133 or
Generation type can same or similar material or generation type in the first dielectric layer 131, but the present invention is not limited thereto.Bullet
Young's modulus of the Young's modulus of property layer 132 less than the second dielectric layer 133.That is, compared to the second dielectric layer 133
It says, the plastically deformable degree after 132 stress of elastic layer is larger.
In the present embodiment, can by machine drilling, laser drill, etch process or other suitable processing procedures, in
Multiple third through-hole 133a are formed on second dielectric layer 133.Third through-hole 133a corresponds to the second through-hole 132a and first through hole
131a, and third through-hole 133a, the second through-hole 132a and first through hole 131a constitute through hole (through via) 130a, cruelly
Expose first line layer 120, can insert conductive materials in through hole 130a in subsequent processing procedure, and makes first line
Layer 120 can be electrically connected with other elements or film layer.In the present embodiment, first through hole 131a, the second through-hole 132a and
Three through-hole 133a can be formed in different steps respectively, however, the present invention is not limited thereto.In other embodiments, first through hole
131a, the second through-hole 132a and third through-hole 133a can be formed in identical step respectively, in other words, can be in shape
At the through hole formed after the second dielectric layer 133 through the first dielectric layer 131, elastic layer 132 and the second dielectric layer 133
130a。
In the present embodiment, the second dielectric layer 133 can have multiple second groove 133b, and make the second dielectric layer 133
It can have multiple the second dielectric part 133c being separated from each other, however, the present invention is not limited thereto.In other embodiments, second is situated between
Electric layer 133 is also possible to comprehensively cover elastic layer 132.
In the present embodiment, the pattern of first groove 131b can correspond to the pattern of second groove 133b.In other words,
First dielectric part 131c can correspond to the second dielectric part 133c.In the present embodiment, the face of the first dielectric part 131c
Product, however, the present invention is not limited thereto identical as the area of the second dielectric part 133c.In other embodiments, the first dielectric part
The area of 131c and the area of the second dielectric part 133c can also be different.
Fig. 1 D is please referred to, after the via is formed, can be existed by the processing procedure that deposition manufacture process and/or electroplating process etc. are suitable for
Conductive materials are inserted in each through hole 130a, to form multiple via holes 141 (conductive via), via hole 141 can
It is electrically connected to first line layer 120.In the present embodiment, the conductive materials inserted in through hole 130a further can at least cover
It is placed on the second dielectric layer 133 of bearing structure 130.Then, such as second will can be covered in by lithographic and etch process
Conductive materials patterning on dielectric layer 133, to form the second line layer 140, and can make the part being located on via hole 141
Second line layer 140 is electrically connected to first line layer 120 by via hole 141.
Fig. 1 E is please referred to, after forming via hole 141, output optical zone 160 can be configured in bearing structure 130.?
It, can will such as polyester resin, epoxy resin, silicon by way of ejection formation (injection-molded) in the present embodiment
Resin or other suitable high molecular materials are formed in bearing structure 130.And it is possible to pass through photocuring or the side of heat cure
Formula solidifies high molecular material above-mentioned, to form the light guide structure 162 with light guide zone 161 and output optical zone 160.Light guide zone
161 expose the second line layer 140 of part, and light guide zone above-mentioned 161 can be in subsequent processing procedure to accommodate such as light
Electric device 150 (is illustrated in Fig. 1 F).However, for the generation type or material of output optical zone 160 and without restriction in the present invention.
In other embodiments, output optical zone 160 is also possible to be fabricated to specific shape in a manner of preforming (pre-formed), and
The material of the output optical zone 160 of preforming can be for example glass, quartz, silica gel, polymethacrylates, polycarbonate or other
Suitable material, and the output optical zone 160 of preforming can be fixed in bearing structure 130 by way of sticking together.
For in structure, the output optical zone 160 of photoelectric cell packaging body 100 in addition to the upper efficiency go out with light of application it
Outside, in the manufacturing process of photoelectric cell packaging body 100, output optical zone 160 can also have the function of similar to barricade, to prevent
When forming the first encapsulated layer 170, the material for being used to form the first encapsulated layer 170 generates overflow in the fabrication process
(overflow)。
Fig. 1 F is please referred to, it, can be by die bond (chip bonding) processing procedure with will at least after forming output optical zone 160
One photoelectric cell 150 is configured in bearing structure 130 and is located in the light guide zone 161 of light guide structure 162, and makes light above-mentioned
Electric device 150 is electrically connected to the second line layer 140 and is electrically connected to first line layer 120 by via hole 141.In Fig. 1 F institute
On the section being painted, the quantity of photoelectric cell 150 is for three, but for the quantity of photoelectric cell 150 in the present invention
Or its optical wavelength for being issued and without restriction.
In the present embodiment, photoelectric cell 150 can for light emitting diode, secondary millimeter light emitting diode (mini LED) or
Micro-led (micro LED；μ LED), and the active surface of photoelectric cell 150 can be towards bearing structure 130, and light
Electric device 150 can be by directly engaging (directbonding), eutectic bonding (eutectic bonding), Soldering ball
(solderball) or the modes such as convex block (bump) engagement, elargol or tin cream engage carry out die bond.In other words, photoelectric cell
150 can be flip (flip chip) engage by way of be connected to the second line layer 140, however, the present invention is not limited thereto.
Fig. 1 G is please referred to, after photoelectric cell 150 is configured in bearing structure 130, is formed in bearing structure 130
First encapsulated layer 170.The material of first encapsulated layer 170 is, for example, polymethacrylates (Polymethyl
Methacrylate), polycarbonate (Polycarbonate) or other suitable hard package materials.First encapsulated layer 170 to
It is inserted in the light guide zone 161 of light guide structure 162 less, at least to encapsulate photoelectric cell 150 and the second partial line layer 140, and
The protective capability to photoelectric cell 150 can be promoted.
In the present embodiment, the output optical zone 160 of 170 covering part of the first encapsulated layer, however, the present invention is not limited thereto.At other
Embodiment in, the first encapsulated layer 170 can also further encapsulate entire output optical zone 160.
Please refer to Fig. 1 H, in the present embodiment, after forming the first encapsulated layer 170, can in bearing structure 130 shape
At the second encapsulated layer 175.The material or generation type of second encapsulated layer 175 can be similar to the first encapsulated layer 170 material or
Generation type, and the Young's modulus of the second encapsulated layer 175 can be less than the Young's modulus of the first encapsulated layer 170, to promote encapsulation
The bending of body 100 or bending ability.
Fig. 1 H to Fig. 1 J is please referred to, the photoelectric cell packaging body of the present embodiment can be substantially completed after above-mentioned processing procedure
100 production.Above-mentioned photoelectric cell packaging body 100 may include first substrate 110, first line layer 120, bearing structure 130,
Second line layer 140, light guide structure 162, photoelectric cell 150, the first encapsulated layer 170 and the second encapsulated layer 175.
Photoelectric cell 150 is to be carried by the second dielectric layer 133 of bearing structure 130, and elastic layer 132 is located at first and is situated between
Between electric layer 131 and the second dielectric layer 133 for carrying photoelectric cell 150, and the Young's modulus of elastic layer 132 is less than the first dielectric
The Young's modulus of layer 131 and the Young's modulus of the second dielectric layer 133.In this way, be inhaled since elastic layer 132 can have stress
The effect with buffering is received, and then reduce packaging body 100 to lead to the issuable damage of 150 institutes of photoelectric cell because of stress, with
Promote the yield and quality of photoelectric cell packaging body 100.
First dielectric layer 131 of bearing structure 130 covers first line layer 120, and the second line layer 140 is located at bearing structure
On 130 the second dielectric layer 133, and the second partial line layer 140 by through the first dielectric layer 131, elastic layer 132 and
The via hole 141 of second dielectric layer 133 is electrically connected to first line layer 120.Also, photoelectric cell 150 is in the second dielectric layer
It is electrically connected on 133 with the second line layer 140, and via hole 141 connects with first line layer 120 and the second line layer 140 respectively
The opposite end of touching is within/on the first dielectric layer 131 and the second dielectric layer 133.In this way, which photoelectric cell can be reduced
Stress when packaging body 100 generates bending or bending because of stress is concentrated and cracks the both ends of via hole 141
(crack), the possibility of fracture or other reduction electric conductivity defects, to promote the yield and quality of photoelectric cell packaging body 100.
In the present embodiment, the first dielectric layer 131 can be is made of multiple first dielectric part 131c, and each
One dielectric part 131c is separated from each other by multiple first groove 131b.Second dielectric layer 133 can be to be situated between by multiple second
Electric part 133c is constituted, and each second dielectric part 133c is separated from each other by multiple second groove 133b.First ditch
Slot 131b can correspond to second groove 133b, the face of the area of the first dielectric part 131c and corresponding second dielectric part 133c
Product is substantially the same, and the first dielectric part 131c can overlap each other with corresponding second dielectric part 133c.First groove
There is elastic layer 132, and elastic layer 132 at least inserts first groove 131b between 131b and second groove 133b.In this way,
Each second dielectric part 133c on elastic layer 132 can be similar to chinampa structure (islanding structure),
The effect of stress absorption or buffering can be formed when photoelectric cell 100 stress of packaging body, be applied to carrying photoelectric cell to reduce
Stress at 150, and the resist bending ability of photoelectric cell packaging body 100 can be promoted.
Output optical zone 160 is located in bearing structure 130 and around photoelectric cell 150 so that photoelectric cell 150 issued the
One light beam L1 can be projected by way of reflecting and/or reflecting towards predetermined direction, that is, constituted and projected the of output optical zone 160
Two light beam L2.
Photoelectric cell 150 is configured in bearing structure 130 and is electrically connected to first line layer 120 and the second line layer 140.
Specifically, photoelectric cell 150 can by the second line layer of part 140 for connecting with via hole 141, via hole 141 and
First line layer 120 and a voltage source (power supply voltage；Vdd it) is electrically connected, and photoelectric cell 150 can pass through
Common voltage (common is grounded or is electrically connected to the second line layer of rest part 140 that via hole 141 does not connect
voltage；Vcom).In other words, first line layer 120 and the second line layer of part 140 to connect with via hole 141 can be with
It for pixel electrode, and can be shared electrode with the second line layer of rest part 140 that via hole 141 does not connect.In this way,
It uses interelectrode voltage difference together by pixel electrode, photoelectric cell 150 can be driven to generate the first light beam L1 of corresponding wavelength.
In the present embodiment, the quantity of photoelectric cell 150 can be multiple, and the first encapsulated layer 170 includes being separated from each other
Multiple first packed parts 171, and each first packed part 171 coats corresponding photoelectric cell 150.It is situated between positioned at identical second
Multiple photoelectric cells 150 on electric part 133c may be constructed a pixel unit PU, and multiple pixel lists on first substrate 110
First PU can be array arrangement, but the present invention is without restriction in this.
In the present embodiment, output optical zone 160 have first surface 160a, second surface 160b, third surface 160c and
4th surface 160d.First surface 160a is led towards bearing structure 130, second surface 160b towards photoelectric cell 150 with constituting
Light area 161, the area of third surface 160c be smaller than the area of first surface 160a, and be filled in light guide zone 161 first
Encapsulated layer 170 can further covering part third surface 160c.The section perpendicular to first substrate 110 (such as: Fig. 1 H
In paper) on, first surface 160a, second surface 160b, third surface 160c and the 4th surface 160d may be constructed class
It is similar to trapezoidal quadrilateral structure.Also, the material of output optical zone 160 in the first light beam L1 wave-length coverage have low absorption coefficient
(absorption coefficient), and the refractive index of output optical zone 160 is less than the refractive index of the first encapsulated layer 170.Such one
Come, the first light beam L1 that photoelectric cell 150 is issued can generate refraction in the second surface 160b of output optical zone 160, so that light
The first light beam L1 that electric device 150 is issued can constitute second projected towards 110 direction of first substrate by way of refraction
Light beam L2.That is, the photoelectric cell packaging body 100 of the present embodiment is the lower light emitting-type structure with refraction type, but this hair
It is bright without being limited thereto.
First encapsulated layer 170 is located in bearing structure 130 and at least encapsulates photoelectric cell 150.Second encapsulated layer 175 is located at
In the bearing structure 130 and upper surface of the first encapsulated layer 170 of the side 170b of the first encapsulated layer 170 of lateral covering and covering
170a.The Young's modulus of first encapsulated layer 170 is greater than the Young's modulus of second encapsulated layer 175, to be promoted to photoelectric cell 150
Protective capability.Compared to the first encapsulated layer 170, the second encapsulated layer 175 with lower Young's modulus can penetrate the second ditch
Slot 133b connection/contact resilient layer 132, to promote the effect of stress absorption or buffering.In the present embodiment, the first encapsulated layer
170 Young's modulus can be between 20GPa to 500GPa, and the Young's modulus of the second encapsulated layer 175 can be between 0.1MPa extremely
40GPa, however, the present invention is not limited thereto.
In the present embodiment, protection knot can be collectively formed in the second dielectric layer 133, output optical zone 160 and the first encapsulated layer 170
Photoelectric cell 150 is coated between elastic layer 132 and the second encapsulated layer 175 by structure.In this way, which photoelectric cell 150 can be by
First dielectric layer 131 is protected with the first encapsulated layer 170 and/or elastic layer 132 with the second encapsulated layer 175.Further, in photoelectricity
In the use of component package 100, if applying stress and photoelectric cell packaging body 100 being made to generate corresponding bending or bending, lead
The output optical zone 160 of photo structure 162 can be applied to photo elements so as to reducing in two adjacent photoelectric cells 150 as buffering
The correspondence stress of part 150, and reduce the possibility that the damage of photoelectric cell 150 is broken with the second line layer 140 and/or via hole 141.
In addition to this, there is elastic layer 132, and compared to the first dielectric layer 131 between photoelectric cell 150 and the first dielectric layer 131
It says, the plastically deformable degree after 132 stress of elastic layer is larger.It, can after applying and being stressed on photoelectric cell packaging body 100
To reduce the stress between photoelectric cell 100 and the first dielectric layer 131 at least through elastic layer 132, photoelectric cell 100 is reduced
The risk to fall off with the first dielectric layer 131 and/or first substrate 110, and avoid photoelectric cell 150 fall off or circuit breaking can
Energy.
Fig. 2A is the partial cutaway schematic according to the photoelectric cell packaging body of second embodiment of the invention.Fig. 2 B is Fig. 2A
The enlarged diagram of middle region R2.The photoelectric cell packaging body 200 of second embodiment and the photoelectric cell of Fig. 1 H to Fig. 1 J encapsulate
Body 100 is similar, and the present embodiment is described using Fig. 2A and Fig. 2 B for photoelectric cell packaging body 200.It is worth noting that,
In Fig. 2A and Fig. 2 B, the same or similar label indicates the same or similar component, therefore for illustrating in Fig. 1 H to Fig. 1 J
Component is repeated no more in this.
Fig. 2A and Fig. 2 B are please referred to, the output optical zone 260 of the photoelectric cell packaging body 200 of the present embodiment has first surface
260a, second surface 260b, third surface 260c and the 4th surface 260d.First surface 260a is towards bearing structure 130, and
Two surface 260b constitute the light guide zone 261 of light guide structure 262 towards photoelectric cell 150, and the area of third surface 260c can be big
In the area of first surface 260a, and the second surface 260b towards photoelectric cell 150 can be an optical reflection face.It is specific and
Speech, on the section (such as: the paper in Fig. 2A or Fig. 2 B) perpendicular to first substrate 110, first surface 260a, second surface
260b, third surface 260c and the 4th surface 260d may be constructed the quadrilateral structure similar to inverted trapezoidal.
In another embodiment, 260 refractive index of output optical zone of light guide structure 262 is smaller than the refraction of the first encapsulated layer 170
Rate.In this way, which the first light beam L1 that photoelectric cell 150 is issued can be generated entirely in the second surface 160b of output optical zone 260
Reflection, is constituted in such a way that the first light beam L1 for issuing photoelectric cell 150 is by reflection towards 110 direction of first substrate
The the second light beam L2 projected.That is, the photoelectric cell packaging body 200 of the present embodiment is that have reflective lower light emitting-type knot
Structure, however, the present invention is not limited thereto.In other embodiments, also can have on second surface 260b can reflect the first light beam L1's
Material makes the first light beam L1 constitute the second light beam L2 of reflection on second surface 260b.
Fig. 3 is the partial cutaway schematic according to the photoelectric cell packaging body of third embodiment of the invention.3rd embodiment
Photoelectric cell packaging body 300 it is similar with the photoelectric cell packaging body 200 of Fig. 2 B with Fig. 2A, the present embodiment using Fig. 3 be directed to light
Electric device packaging body 300 is described.It is worth noting that, the same or similar label indicates the same or similar in Fig. 3
Component, therefore repeated no more for the component illustrated in Fig. 2A and Fig. 2 B in this.
Referring to FIG. 3, the photoelectric cell packaging body 300 of the present embodiment further includes the second substrate 380, wherein first line layer
120, bearing structure 130, the second line layer 140, light guide structure 162, photoelectric cell 150, the first encapsulated layer 170 and the second envelope
Layer 175 is filled between first substrate 110 and the second substrate 380.The second substrate 380 can be covered in the second encapsulated layer 175, with
Promote the protective capability to photoelectric cell 150.In some embodiments, the second substrate can be made according to the demand in design
380 have flexible, light peneration and/or thermal conductivity, in the present invention and without restriction.
Fig. 4 is the partial cutaway schematic according to the photoelectric cell packaging body of fourth embodiment of the invention.Fourth embodiment
Photoelectric cell packaging body 400 it is similar with the photoelectric cell packaging body 300 of Fig. 3, the present embodiment using Fig. 4 for photoelectric cell envelope
Dress body 400 is described.It is worth noting that, the same or similar label indicates the same or similar component in Fig. 4, therefore
It is repeated no more for the component illustrated in Fig. 3 in this.
Referring to FIG. 4, the second substrate 480 of the photoelectric cell packaging body 400 of the present embodiment can have thermal conductivity, to be promoted
The thermal diffusivity of photoelectric cell packaging body 400.
In the present embodiment, photoelectric cell packaging body 400 can further include heat conducting film 481, thermal conductive wire 482 and/or heat dissipation
Particle 483.The material of heat conducting film 481 may include graphene, nano silver or other similar object or combinations thereof, and heat conducting film
481, which can correspond to photoelectric cell 150, is located or positioned in the second substrate 480.The material of thermal conductive wire 482 can be metal, lead
Hot line 482 can correspond to the setting of photoelectric cell 150 and separate with first line layer 120 and the second line layer 140.Radiate particle
483 material may include boron nitride or other similar object, and the particle 483 that radiates can be distributed in the first encapsulated layer 170 and/or
In second encapsulated layer 175.In this way, which light can be promoted by heat conducting film 481, thermal conductive wire 482 and/or heat dissipation particle 483
The heat-sinking capability of electric device packaging body 400.
Fig. 5 is the partial cutaway schematic according to the photoelectric cell packaging body of fifth embodiment of the invention.5th embodiment
Photoelectric cell packaging body 500 it is similar with the photoelectric cell packaging body 200 of Fig. 2, the present embodiment using Fig. 5 for photoelectric cell envelope
Dress body 500 is described.It is worth noting that, the same or similar label indicates the same or similar component in Fig. 5, therefore
It is repeated no more for the component illustrated in Fig. 2 in this.
Referring to FIG. 5, the photoelectric cell packaging body 500 of the present embodiment can pass through etching, cutting or computer numerical control
Make (Computer Numerical Control；CNC) punching press or other suitable modes are with more in being formed on first substrate 510
A base openings 510a, base openings 510a can correspond to first groove 131b and/or second groove 133b setting.In other words
It says, the first dielectric layer 131 and/or the second dielectric layer 133 can not be overlapped with base openings 510a.In this way, which can be passed through
The base openings 510a of one substrate 510 and the bent or flexible ability for promoting photoelectric cell packaging body 500.
Fig. 6 is the partial cutaway schematic according to the photoelectric cell packaging body of sixth embodiment of the invention.Sixth embodiment
Photoelectric cell packaging body 600 it is similar with the photoelectric cell packaging body 500 of Fig. 5, the present embodiment using Fig. 6 for photoelectric cell envelope
Dress body 600 is described.It is worth noting that, the same or similar label indicates the same or similar component in Fig. 6, therefore
It is repeated no more for the component illustrated in Fig. 5 in this.
Referring to FIG. 6, the elastic layer 632 of the bearing structure 630 of the photoelectric cell packaging body 600 of the present embodiment is more filled in
In base openings 510a.In the present embodiment, the ratio of the young's modulus of the young's modulus of first substrate 510 and elastic layer 632
10 can be more than or equal to.Alternatively, in another embodiment, the young's modulus of first substrate 510 and the young's modulus of elastic layer 632
Ratio can be more than or equal to 50.Alternatively, in another embodiment, the young's modulus of first substrate 510 and the poplar of elastic layer 632
The ratio of family name's coefficient can be more than or equal to 100.That is, for compared to first substrate 510, after 632 stress of elastic layer
Plastically deformable degree is larger.
Fig. 7 is the partial cutaway schematic according to the dress body of the photoelectric cell of seventh embodiment of the invention.7th embodiment
Photoelectric cell packaging body 700 it is similar with the photoelectric cell packaging body 200 of Fig. 2 B with Fig. 2A, the present embodiment using Fig. 7 be directed to light
Electric device packaging body 700 is described.It is worth noting that, the same or similar label indicates the same or similar in Fig. 7
Component, therefore repeated no more for the component illustrated in Fig. 2A and Fig. 2 B in this.
Referring to FIG. 7, the photoelectric cell packaging body 700 of the present embodiment further includes booster structure 784.Booster structure 784
Between photoelectric cell 150 and bearing structure 130, and the padded height 784h of booster structure 784 is less than the leaded light of output optical zone 260
Thickness 260h.In this way, which photoelectric cell 150 and bearing structure 130 and/or out light can be adjusted by booster structure 784
Relative distance between area 260 can adjust the first light beam L1 transmitting position or orientation according to the demand in design to change light
Electric device packaging body 700 goes out the direction light (the second light beam L2).
Fig. 8 is the partial cutaway schematic according to the photoelectric cell packaging body of eighth embodiment of the invention.8th embodiment
Photoelectric cell packaging body 800 it is similar with the photoelectric cell packaging body 700 of Fig. 7, the present embodiment using Fig. 8 for photoelectric cell envelope
Dress body 800 is described.It is worth noting that, in fig. 8, the same or similar label indicates the same or similar component, therefore
It is repeated no more for the component illustrated in Fig. 7 in this.
Referring to FIG. 8, the photoelectric cell packaging body 800 of the present embodiment includes light guide structure 862, and light guide structure 862
Output optical zone 860 has first surface 860a, second surface 860b and third surface 860c.First surface 860a is tied towards carrying
Structure 130, second surface 860b constitute the light guide zone 861 of light guide structure 862 towards photoelectric cell 150.Perpendicular to the first base
On the section (such as: the paper in Fig. 8) of plate 110, first surface 860a, second surface 860b and third surface 860c can be with structures
At triangular structure.Also, the material of output optical zone 860 in the first light beam L1 wave-length coverage have low absorption coefficient.In this reality
It applies in example, third surface 860c can be optical reflection face, so that the first light beam L1 that photoelectric cell 150 is issued can pass through
The mode of reflection constitutes the second light beam L2 projected towards 110 direction of first substrate.
In the present embodiment, third surface 860c may include with the material that can reflect the first light beam L1, but the present invention
It is without being limited thereto.In other embodiments, the refractive index of output optical zone 860 can be greater than medium (such as air on the 860c of third surface
Or second encapsulated layer 175) refractive index, and the first light beam L1 is allow to be all-trans in the third surface 860c generation of output optical zone 860
It penetrates.
Fig. 9 is the partial cutaway schematic according to the photoelectric cell packaging body of ninth embodiment of the invention.9th embodiment
Photoelectric cell packaging body 900 it is similar with the photoelectric cell packaging body 100 of Fig. 1 H to Fig. 1 J, the present embodiment using Fig. 9 be directed to light
Electric device packaging body 900 is described.It is worth noting that, the same or similar label indicates the same or similar in Fig. 9
Component, therefore repeated no more for the component illustrated in Fig. 1 H to Fig. 1 J in this.
Referring to FIG. 9, the photoelectric cell packaging body 900 of the present embodiment further includes the booster structure similar to previous embodiment
984。
Figure 10 is the partial cutaway schematic according to the photoelectric cell packaging body of tenth embodiment of the invention.Tenth embodiment
Photoelectric cell packaging body 1000 it is similar with the photoelectric cell packaging body 800 of Fig. 8, the present embodiment using Figure 10 be directed to photoelectric cell
Packaging body 1000 is described.It is worth noting that, the same or similar label indicates the same or similar structure in Figure 10
Part, therefore repeated no more for the component illustrated in Fig. 8 in this.
Referring to FIG. 10, the photoelectric cell packaging body 1000 of the present embodiment includes light guide structure 1062, and light guide structure
The second surface 1060b of 1062 output optical zone 1060 is partly to wear anti-face (transflective), and third surface 1060c can be with
For optical reflection face.The first light beam L1 of directive second surface 1060b can partially reflect in second surface 1060b and part wear
Saturating second surface 1060b.In this way, the second partial light beam L2 can be directed away from the injection of the direction of first substrate 110,
And remaining part the second light beam L2 " can be projected towards the direction of first substrate 110.That is, the photoelectricity of the present embodiment
Component package 1000 is that have two-sided (bifacial) light emitting-type structure.
Figure 11 is the partial cutaway schematic according to the photoelectric cell packaging body of eleventh embodiment of the invention.11st is real
The photoelectric cell packaging body 1100 for applying example is similar with the photoelectric cell packaging body 700 of Fig. 7, and the present embodiment is directed to photoelectricity using Figure 11
Component package 1100 is described.It is worth noting that, the same or similar label indicates the same or similar in Figure 11
Component, therefore repeated no more for the component illustrated in Fig. 7 in this.
Figure 11 is please referred to, the photoelectric cell packaging body 1100 of the present embodiment further includes reflecting layer 1185.1185, reflecting layer
In on the first encapsulated layer 170 and covering third surface 260c.In this way, in the photoelectric cell envelope with lower light emitting-type structure
It fills in body 1100, its brightness (luminance) can be promoted by reflecting layer 1185.
Figure 12 is the partial cutaway schematic according to the photoelectric cell packaging body of twelveth embodiment of the invention.12nd is real
The photoelectric cell packaging body 1200 for applying example is similar with the photoelectric cell packaging body 700 of Fig. 7, and the present embodiment is directed to photoelectricity using Figure 12
Component package 1200 is described.It is worth noting that, the same or similar label indicates the same or similar in Figure 12
Component, therefore repeated no more for the component illustrated in Fig. 7 in this.
Figure 12 is please referred to, the first encapsulated layer 1270 of the photoelectric cell packaging body 1200 of the present embodiment may include light conversion
(photon conversion) material.For example, if light conversion material above-mentioned is up-conversion (upconversion
Material), then the frequency of the second light beam L2 ' of part can be made to be greater than the frequency of the first light beam L1.Conversely, if light above-mentioned
Transition material is lower transition material (downconversion material), then can make the frequency of the second light beam L2 ' of part
Less than the frequency of the first light beam L1.
Figure 13 is the partial cutaway schematic according to the photoelectric cell packaging body of thriteenth embodiment of the invention.13rd is real
The photoelectric cell packaging body 1300 for applying example is similar with the photoelectric cell packaging body 100 of Fig. 1 H to Fig. 1 J, and the present embodiment uses Figure 13
It is described for photoelectric cell packaging body 1300.It is worth noting that, the same or similar label indicates identical in Figure 13
Or similar component, therefore repeated no more for the component illustrated in Fig. 1 H to Fig. 1 J in this.
Figure 13 is please referred to, 150 quantity of photoelectric cell of the photoelectric cell packaging body 1300 of the present embodiment is multiple, the first envelope
Dress layer 1370 coats multiple photoelectric cells 150, and the first encapsulated layer 1370 be completely covered by two adjacent photoelectric cells 150 it
Between third surface 160c on.
Figure 14 is the partial cutaway schematic according to the photoelectric cell packaging body of fourteenth embodiment of the invention.14th is real
The photoelectric cell packaging body 1400 for applying example is similar with the photoelectric cell packaging body 1300 of Figure 13, and the present embodiment is directed to light using Figure 14
Electric device packaging body 1400 is described.It is worth noting that, the same or similar label indicates same or similar in Figure 14
Component, therefore repeated no more for the component illustrated in Figure 13 in this.
Figure 14 is please referred to, output optical zone is completely covered in the first encapsulated layer 1470 of the photoelectric cell packaging body 1400 of the present embodiment
160, and be covered on the elastic layer 132 for being exposed to second groove 133b.
Figure 15 is the partial cutaway schematic according to the photoelectric cell packaging body of fifteenth embodiment of the invention.15th is real
The photoelectric cell packaging body 1500 for applying example is similar with the photoelectric cell packaging body 200 of Fig. 2, and the present embodiment is directed to photoelectricity using Figure 15
Component package 1500 is described.It is worth noting that, the same or similar label indicates the same or similar in Figure 15
Component, therefore repeated no more for the component illustrated in Fig. 2 in this.
Please refer to Figure 15,1575 side of the second encapsulated layer of the photoelectric cell packaging body 1500 of the present embodiment is to covering the first envelope
The side 1570b of layer 1570 is filled, and the second encapsulated layer 1575 is not covered in the upper surface 1570a of the first encapsulated layer 1570.
In some embodiments, the first encapsulated layer 1570 and the second encapsulated layer 1575 can be by identical material institute shape
At and it is possible to carry out pattern by ultraviolet light, chemical mode, physics mode, heating method or other similar mode
Change the first encapsulated layer 1570 of processing, allows the Young's modulus of the second encapsulated layer 1575 less than the Young of the first encapsulated layer 1570
Modulus, to promote bending or the bending ability of packaging body 1500.
Figure 16 is the partial cutaway schematic according to the photoelectric cell packaging body of sixteenth embodiment of the invention.16th is real
The photoelectric cell packaging body 1600 for applying example is similar with the photoelectric cell packaging body 1500 of Figure 15, and the present embodiment is directed to light using Figure 16
Electric device packaging body 1600 is described.It is worth noting that, the same or similar label indicates same or similar in Figure 16
Component, therefore repeated no more for the component illustrated in Figure 15 in this.
In some embodiments, the first encapsulated layer 1670 and the second encapsulated layer 1575 can be by identical material institute shape
At and it is possible to carry out pattern by ultraviolet light, chemical mode, physics mode, heating method or other similar mode
Change the first encapsulated layer 1670 of processing, allows the Young's modulus of the second encapsulated layer 1575 less than the Young of the first encapsulated layer 1670
Modulus, to promote bending or the bending ability of packaging body 1600.
Figure 16 is please referred to, 150 quantity of photoelectric cell of the photoelectric cell packaging body 1600 of the present embodiment is multiple, the first envelope
It fills layer 1670 and coats photoelectric cell 150, and the first encapsulated layer 1670 is completely covered by between two adjacent photoelectric cells 150
On the 260c of third surface.
Figure 17 is the partial cutaway schematic according to the photoelectric cell packaging body of seventeenth embodiment of the invention.17th is real
The photoelectric cell packaging body 1700 for applying example is similar with the photoelectric cell packaging body 100 of Fig. 1 H to Fig. 1 J, and the present embodiment uses Figure 17
It is described for photoelectric cell packaging body 1700.It is worth noting that, the same or similar label indicates identical in Figure 17
Or similar component, therefore repeated no more for the component illustrated in Fig. 1 H to Fig. 1 J in this.
Please refer to Figure 17, the first dielectric layer 1731 of the bearing structure 1730 of the photoelectric cell packaging body 1700 of the present embodiment
It can be and be comprehensively covered on first substrate 110.
Figure 18 is the partial cutaway schematic according to the photoelectric cell packaging body of eighteenth embodiment of the invention.18th is real
The photoelectric cell packaging body 1800 for applying example is similar with the photoelectric cell packaging body 100 of Fig. 1 H to Fig. 1 J, and the present embodiment uses Figure 18
It is described for photoelectric cell packaging body 1800.It is worth noting that, the same or similar label indicates identical in Figure 18
Or similar component, therefore repeated no more for the component illustrated in Fig. 1 H to Fig. 1 J in this.
Figure 18 is please referred to, the photoelectric cell packaging body 1800 of the present embodiment is in bearing structure 1830, the first dielectric layer
1831 corresponding can configure with the second dielectric layer 133, and the area of the first dielectric layer 1831 is greater than the face of the second dielectric layer 133
Product.
Figure 19 is the partial cutaway schematic according to the photoelectric cell packaging body of nineteenth embodiment of the invention.19th is real
The photoelectric cell packaging body 1900 for applying example is similar with the photoelectric cell packaging body 100 of Fig. 1 H to Fig. 1 J, and the present embodiment uses Figure 19
It is described for photoelectric cell packaging body 1900.It is worth noting that, the same or similar label indicates identical in Figure 19
Or similar component, therefore repeated no more for the component illustrated in Fig. 1 H to Fig. 1 J in this.
Figure 19 is please referred to, the photoelectric cell packaging body 1900 of the present embodiment is in bearing structure 1930, the first dielectric layer
1931 corresponding can configure with the second dielectric layer 133, and the area of the first dielectric layer 1931 is less than the face of the second dielectric layer 133
Product.
Figure 20 is the partial cutaway schematic according to the photoelectric cell packaging body of twentieth embodiment of the invention.20th is real
The photoelectric cell packaging body 2000 for applying example is similar with the photoelectric cell packaging body 100 of Fig. 1 H to Fig. 1 J, and the present embodiment uses Figure 20
It is described for photoelectric cell packaging body 2000.It is worth noting that, the same or similar label indicates identical in Figure 20
Or similar component, therefore repeated no more for the component illustrated in Fig. 1 H to Fig. 1 J in this.
Figure 20 is please referred to, the photoelectric cell packaging body 2000 of the present embodiment is in bearing structure 2030, the first dielectric layer
2031 can form multiple the first dielectric parts 2031c, 2031c being separated from each other by first groove 2031b ', second is situated between
Electric layer 2033 can form multiple the second dielectric part 2033c being separated from each other, and the first dielectric by second groove 2033b
Part 2031c, 2031c ' quantity be greater than the second dielectric part 2033c quantity.In the present embodiment, the second dielectric part
2033c at least corresponds to the first dielectric part 2031c of part, and the first partial dielectric part 2031c ' is positioned at adjacent
Between two the first dielectric part 2031c.
Figure 21 is the partial cutaway schematic according to the photoelectric cell packaging body of 21st embodiment of the invention.20th
The photoelectric cell packaging body 2100 of one embodiment and the photoelectric cell packaging body 100 of Fig. 1 H to Fig. 1 J are similar, and the present embodiment uses
Figure 21 is described for photoelectric cell packaging body 2100.It is worth noting that, the same or similar label indicates in Figure 21
The same or similar component, therefore repeated no more for the component illustrated in Fig. 1 H to Fig. 1 J in this.
Figure 21 is please referred to, the photoelectric cell packaging body 2100 of the present embodiment is in bearing structure 2130, the first dielectric layer
2131 can form multiple the first dielectric part 2131c being separated from each other, the second dielectric layer 2133 by first groove 2131b
Multiple the second dielectric parts 2133c, 2133c being separated from each other can be formed by second groove 2133b ', and the first dielectric
The quantity of part 2131c is less than the second dielectric part 2133c, 2133c ' quantity.In the present embodiment, the first dielectric part
2131c at least corresponds to the second dielectric part 2133c of part.In addition to this, the of the first dielectric part 2131c is not corresponded to
Two dielectric part 2133c ' are and photoelectric cell 150 and output optical zone between two adjacent the second dielectric part 2133c
160 can correspond to the first dielectric part 2131c configuration.
Figure 22 A is the local overlooking schematic diagram according to the photoelectric cell packaging body of 22nd embodiment of the invention.Figure 22 B
It is the partial cutaway schematic according to the photoelectric cell packaging body of 22nd embodiment of the invention.For clarity, Figure 22 A is omitted
It is painted part film layer and component.The photoelectric cell packaging body 2200 of 22nd embodiment and the photoelectric cell of Fig. 1 H to Fig. 1 J seal
It is similar to fill body 100, the present embodiment is described using Figure 22 A and Figure 22 B for photoelectric cell packaging body 2200.It is noticeable
It is that in Figure 22 A and Figure 22 B, the same or similar label indicates the same or similar component, therefore is directed in Fig. 1 H to Fig. 1 J and says
The component of bright mistake is repeated no more in this.
It please also refer to Figure 22 A and Figure 22 B, in the present embodiment, bearing structure 2230 further includes active member 2290.It is main
Dynamic element 2290 includes semiconductor layer 2291, gate (grid) G, gate dielectric layer 2292, source S and drain (drain electrode) D.Partly lead
Body layer 2291 can be located on first substrate 110 and have source area 2291S, channel region 2291C and drain area 2291D, wherein
Channel region 2291C is between source area 2291S and drain area 2291D.Source S and drain D are respectively coupled to semiconductor layer
2291 source area 2291S and drain area 2291D.Gate G is located on first substrate 110 and corresponds to semiconductor layer 191
Channel region 2291C setting.Gate dielectric layer 2292 is between gate G and semiconductor layer 2291, and the first dielectric layer 131 covers lock
Dielectric layer 2292 and gate G.In the present embodiment, semiconductor layer 2291 is between first substrate 110 and gate G.In other words
It says, the active member 2290 of the present embodiment can be the thin film transistor (TFT) with upper gate (top gate) structure, but the present invention is not
It is limited to this.In addition to this, active member 2290 can be formed by general manufacture of semiconductor, will not be repeated here in this.
In the present embodiment, photoelectric cell packaging body 2200 further includes scan line SL and data line DL.Source S can be with number
It is electrically connected according to line DL, gate G can be electrically connected with scan line SL, and drain D is by the first line layer 120 of part (that is, and via hole
The part first line layers 120 of 141 connections) with via hole 141 it is electrically connected to photoelectric cell 150, and photoelectric cell 150 can lead to
It crosses the driving of active member 2290 and shines.That is, the photoelectric cell packaging body 2200 of the present embodiment, which can be, has master
The light-emitting component of dynamic formula (active mode), however, the present invention is not limited thereto.
In the present embodiment, it can have passivation layer (passivation between the first dielectric layer 131 and elastic layer 132
Layer) 2293, and passivation layer 2293, gate dielectric layer 2292 and the first dielectric layer 131 can have similar pattern, but this
Invention is not limited thereto.
In the present embodiment, buffer layer 2294 can be formed on first substrate 110.Buffer layer 2294 can have well
Engaging force or lower aqueous vapor penetrance (water vapor transmission rate；WVTR), to promote photoelectric cell
The reliability (reliability) of packaging body 2200.
Figure 23 is the partial cutaway schematic according to the photoelectric cell packaging body of 23th embodiment of the invention.20th
The photoelectric cell packaging body 2300 of three embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is adopted
It is described with Figure 23 for photoelectric cell packaging body 2300.It is worth noting that, in Figure 23, the same or similar label table
Show the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 23 is please referred to, the photoelectric cell packaging body 2300 of the present embodiment is in bearing structure 2330, passivation layer 2393, lock
Dielectric layer 2392 and the first dielectric layer 1731 can be and be comprehensively covered on first substrate 110.
Figure 24 is the partial cutaway schematic according to the photoelectric cell packaging body of 24th embodiment of the invention.20th
The photoelectric cell packaging body 2400 of four embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is adopted
It is described with Figure 24 for photoelectric cell packaging body 2400.It is worth noting that, in Figure 24, the same or similar label table
Show the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 24 is please referred to, the photoelectric cell packaging body 2400 of the present embodiment is in bearing structure 2430, passivation layer 2493, lock
The area of dielectric layer 2492 and the first dielectric layer 1931 can be less than the area of the second dielectric layer 133.
Figure 25 is the partial cutaway schematic according to the photoelectric cell packaging body of 25th embodiment of the invention.20th
The photoelectric cell packaging body 2500 of five embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is adopted
It is described with Figure 25 for photoelectric cell packaging body 2500.It is worth noting that, in Figure 25, the same or similar label table
Show the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 25 is please referred to, the photoelectric cell packaging body 2500 of the present embodiment is in bearing structure 2530, the first dielectric layer
2031 can form multiple the first dielectric parts 2031c, 2031c being separated from each other by first groove 2031b ', second is situated between
Electric layer 2033 can form multiple the second dielectric part 2033c being separated from each other, and the first dielectric by second groove 2033b
Part 2031c, 2031c ' quantity be greater than the second dielectric part 2033c quantity.In the present embodiment, the second dielectric part
2033c at least corresponds to the first dielectric part 2031c of part, and the first partial dielectric part 2031c ' is positioned at adjacent
Between two the first dielectric part 2031c.Also, gate dielectric layer 2292 corresponds to the first dielectric layer 2031 with passivation layer 2293 and sets
It sets.
Figure 26 is the partial cutaway schematic according to the photoelectric cell packaging body of 26th embodiment of the invention.20th
The photoelectric cell packaging body 2600 of six embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is adopted
It is described with Figure 26 for photoelectric cell packaging body 2600.It is worth noting that, in Figure 26, the same or similar label table
Show the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 26 is please referred to, the photoelectric cell packaging body 2600 of the present embodiment is in bearing structure 2630, the first dielectric layer
2131 can form multiple the first dielectric part 2131c being separated from each other, the second dielectric layer 2133 by first groove 2131b
Multiple the second dielectric parts 2133c, 2133c being separated from each other can be formed by second groove 2133b ', and the first dielectric
The quantity of part 2131c is less than the second dielectric part 2133c, 2133c ' quantity.In the present embodiment, the first dielectric part
2131c at least corresponds to the second dielectric part 2133c of part.In addition to this, the of the first dielectric part 2131c is not corresponded to
Two dielectric part 2133c ' are and photoelectric cell 150 and output optical zone between two adjacent the second dielectric part 2133c
160, which correspond to the first dielectric part 2131c, configures.Also, gate dielectric layer 2292 and passivation layer 2293 correspond to the first dielectric layer
2131 settings.
Figure 27 is the partial cutaway schematic according to the photoelectric cell packaging body of 27th embodiment of the invention.20th
The photoelectric cell packaging body 2700 of seven embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is adopted
It is described with Figure 27 for photoelectric cell packaging body 2700.It is worth noting that, in Figure 27, the same or similar label table
Show the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 27 is please referred to, the photoelectric cell packaging body 2700 of the present embodiment is in bearing structure 2730, gate dielectric layer 2792
Can be and be comprehensively covered on first substrate 110, and passivation layer 2293 and the first dielectric layer 131 can have it is similar
Pattern.
Figure 28 is the partial cutaway schematic according to the photoelectric cell packaging body of 28th embodiment of the invention.20th
The photoelectric cell packaging body 2700 of eight embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is adopted
It is described with Figure 28 for photoelectric cell packaging body 2800.It is worth noting that, in Figure 28, the same or similar label table
Show the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 28 is please referred to, the photoelectric cell packaging body 2800 of the present embodiment is in bearing structure 2830, gate dielectric layer 2392
And first dielectric layer 1731 can be and be comprehensively covered on first substrate 110, and passivation layer 2293 corresponds to second and is situated between
Electric layer 133 is arranged and can have similar pattern with the second dielectric layer 133.
Figure 29 is the partial cutaway schematic according to the photoelectric cell packaging body of 29th embodiment of the invention.20th
The photoelectric cell packaging body 2900 of nine embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is adopted
It is described with Figure 29 for photoelectric cell packaging body 2900.It is worth noting that, in Figure 29, the same or similar label table
Show the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 29 is please referred to, the photoelectric cell packaging body 2900 of the present embodiment is in bearing structure 2930, gate dielectric layer 2392
And passivation layer 2393 can be and comprehensively be covered on first substrate 110, and passivation layer 2393 is covered in and is not situated between by first
The gate dielectric layer 2392 that electric layer 131 is covered.
Figure 30 is the partial cutaway schematic according to the photoelectric cell packaging body of 30st embodiment of the invention.30th is real
The photoelectric cell packaging body 3000 for applying example is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, and the present embodiment is using figure
30 are described for photoelectric cell packaging body 3000.It is worth noting that, the same or similar label indicates phase in Figure 30
Same or similar component, therefore repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Please refer to Figure 30, the photoelectric cell packaging body 3000 of the present embodiment in bearing structure 3030, passivation layer 2393 with
And first dielectric layer 1731 can be and be comprehensively covered on first substrate 110, and the covering of the first dielectric layer 1731 is not by lock
The buffer layer 2294 that dielectric layer 2292 is covered.Gate dielectric layer 2292 corresponds to the setting of the second dielectric layer 133 and can be with second
Dielectric layer 133 has similar pattern.
Figure 31 is the partial cutaway schematic according to the photoelectric cell packaging body 3100 of 31nd embodiment of the invention.The
The photoelectric cell packaging body 3100 of 31 embodiments is similar with the photoelectric cell packaging body 2200 of Figure 22 B with Figure 22 A, this implementation
Example is described using Figure 31 for photoelectric cell packaging body 3100.It is worth noting that, in Figure 31, the same or similar mark
It number indicates the same or similar component, therefore is repeated no more for the component illustrated in Figure 22 A and Figure 22 B in this.
Figure 31 is please referred to, for the photoelectric cell packaging body 3100 of the present embodiment in bearing structure 3130, passivation layer 2393 can
To be comprehensively to be covered on first substrate 110, and passivation layer 2393 is covered in not by the first dielectric layer 131 and lock dielectric
The buffer layer 2294 that layer 2292 is covered.
The photoelectric cell packaging body of one embodiment of the invention may include bearing structure, and wherein bearing structure is by the first dielectric
Layer, elastic layer and the second dielectric layer are constituted, and the first dielectric layer or the second dielectric layer at least have multiple grooves.Such one
Come, bearing structure can form the effect of stress absorption or buffering in packaging body stress, be applied to carrying photoelectric cell to reduce
The stress at place, and the resist bending ability of photoelectric cell packaging body can be promoted.
Claims (20)
1. a kind of photoelectric cell packaging body characterized by comprising
First line layer is located on first substrate；
Bearing structure, is located on the first substrate and the covering first line layer, the bearing structure include the first dielectric
Layer, elastic layer and the second dielectric layer, wherein the elastic layer is between first dielectric layer and second dielectric layer,
And the Young's modulus of the elastic layer is less than the Young's modulus of first dielectric layer and the Young's modulus of second dielectric layer；
Second line layer is located in the bearing structure；
At least one photoelectric cell is located in the bearing structure, and at least one described photoelectric cell is electrically connected to described the
One line layer and second line layer；And
First encapsulated layer is located in the bearing structure and encapsulates at least one described photoelectric cell.
2. photoelectric cell packaging body as described in claim 1, which is characterized in that further include at least one via hole, at least pass through
Wear the elastic layer and second dielectric layer of the bearing structure, and at least one described photoelectric cell by it is described extremely
A few via hole is electrically connected to the first line layer.
3. photoelectric cell packaging body as described in claim 1, which is characterized in that the first substrate includes that multiple substrates are opened
Mouthful, and first dielectric layer or second dielectric layer and the multiple base openings are not be overlapped.
4. photoelectric cell packaging body as claimed in claim 3, which is characterized in that the elastic layer is filled in the multiple substrate
In opening.
5. photoelectric cell packaging body as described in claim 1, which is characterized in that first dielectric layer has multiple first ditches
Slot, and the elastic layer is filled in the multiple first groove.
6. photoelectric cell packaging body as described in claim 1, which is characterized in that second dielectric layer has multiple second ditches
Slot.
7. photoelectric cell packaging body as described in claim 1, which is characterized in that further include at least one light guide structure, be located at
In the bearing structure and around at least one described photoelectric cell, and first encapsulated layer be filled in it is described at least one lead
In the region that photo structure is surrounded.
8. photoelectric cell packaging body as claimed in claim 7, which is characterized in that the light guide structure at least has the first table
Face, second surface and third surface, wherein the first surface is towards the bearing structure, the second surface is towards described
At least one photoelectric cell, and the second surface is connected to the first surface and the third surface.
9. photoelectric cell packaging body as claimed in claim 8, which is characterized in that the first surface and the third surface are not
Adjacent, the area of the first surface is greater than the area on the third surface, and the light guide structure includes an output optical zone, and described
The refractive index of output optical zone is greater than the refractive index of first encapsulated layer.
10. photoelectric cell packaging body as claimed in claim 8, which is characterized in that the first surface and the third surface
Non-conterminous, the area of the first surface is less than the area on the third surface, and the light guide structure includes output optical zone, and described
The refractive index of output optical zone is less than the refractive index of first encapsulated layer.
11. photoelectric cell packaging body as claimed in claim 8, which is characterized in that first encapsulated layer is also covered in described
On third surface.
12. photoelectric cell packaging body as claimed in claim 8, which is characterized in that further include reflecting layer, be located at first envelope
On dress layer and cover the third surface.
13. photoelectric cell packaging body as described in claim 1, which is characterized in that at least one described photoelectric cell is multiple
Photoelectric cell, first encapsulated layer includes multiple first packed parts being separated from each other, and each the multiple first encapsulates
Part coats corresponding the multiple photoelectric cell.
14. photoelectric cell packaging body as described in claim 1, which is characterized in that at least one described photoelectric cell is multiple
Photoelectric cell, and first encapsulated layer also coats the multiple photoelectric cell.
15. photoelectric cell packaging body as described in claim 1, which is characterized in that further include the second encapsulated layer, held positioned at described
First encapsulated layer is carried in structure and at least laterally covers, and the Young's modulus of first encapsulated layer is greater than second envelope
Fill the Young's modulus of layer.
16. photoelectric cell packaging body as claimed in claim 15, which is characterized in that second encapsulated layer is also covered in described
On first encapsulated layer.
17. photoelectric cell packaging body as described in claim 1, which is characterized in that further include the second encapsulated layer, held positioned at described
The elastic layer is carried in structure and contacts, and the Young's modulus of first encapsulated layer is greater than the Young mould of second encapsulated layer
Amount.
18. photoelectric cell packaging body as described in claim 1, which is characterized in that further include the second substrate, wherein described first
Line layer, the bearing structure, second line layer, at least one described photoelectric cell and first encapsulated layer are located at
Between the first substrate and the second substrate.
19. photoelectric cell packaging body as described in claim 1, which is characterized in that the bearing structure further includes at least one
Active member, at least one described active member include source electrode, drain and gate, and the drain and the first line layer are electric
Connection.
20. photoelectric cell packaging body as claimed in claim 19, which is characterized in that further include at least one scan line and extremely
A few data line, at least one scan line are electrically connected with the gate, at least one data line and the source electrode
Electrical connection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762516057P | 2017-06-06 | 2017-06-06 | |
| US62/516,057 | 2017-06-06 |
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| CN109004036A true CN109004036A (en) | 2018-12-14 |
| CN109004036B CN109004036B (en) | 2020-08-14 |
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| CN113570964A (en) * | 2021-02-21 | 2021-10-29 | 深圳市汇晨电子股份有限公司 | Bendable MiniLED backlight source and manufacturing process thereof |
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| CN111508989A (en) * | 2020-03-24 | 2020-08-07 | 京东方科技集团股份有限公司 | Display substrate and preparation method thereof, display panel and preparation method thereof |
| WO2021190052A1 (en) * | 2020-03-24 | 2021-09-30 | 京东方科技集团股份有限公司 | Display substrate and preparation method therefor, and display panel and preparation method therefor |
| CN111508989B (en) * | 2020-03-24 | 2023-10-03 | 京东方科技集团股份有限公司 | Display substrate and preparation method thereof, display panel and preparation method thereof |
| CN113570964A (en) * | 2021-02-21 | 2021-10-29 | 深圳市汇晨电子股份有限公司 | Bendable MiniLED backlight source and manufacturing process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI665768B (en) | 2019-07-11 |
| CN109004036B (en) | 2020-08-14 |
| TW201903988A (en) | 2019-01-16 |
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