CN108598102B

CN108598102B - Light emitting device

Info

Publication number: CN108598102B
Application number: CN201810358911.XA
Authority: CN
Inventors: 谢明勋; 刘欣茂
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2012-08-15
Filing date: 2013-08-15
Publication date: 2021-11-05
Anticipated expiration: 2033-08-15
Also published as: CN108598102A; CN103594600A; CN103594600B

Abstract

The invention discloses a light emitting display module, comprising: a substrate; the plurality of light emitting diode modules are arranged on the substrate in an array mode; the light emitting diode module comprises a plurality of mutually separated packaged light emitting units, and each packaged light emitting unit comprises a plurality of photoelectric elements, a first supporting structure and a frame; the plurality of photoelectric elements are covered by the first supporting structure, and the frame surrounds the first supporting structure and the plurality of photoelectric elements.

Description

Light emitting device

The invention relates to a divisional application of Chinese invention patent application (application number: 201310357092.4, application date: 2013, 8, month 15 and the name: a light-emitting device).

Technical Field

The invention relates to a light-emitting device, and further comprises a light-emitting display module.

Background

Light Emitting Diode (LED) in the solid state Light Emitting device has good photoelectric properties such as low power consumption, low heat generation, long operation life, impact resistance, small volume, fast response speed, and capability of Emitting colored Light with stable wavelength, and is therefore commonly used in the fields of indicator lamps and photoelectric products of household appliances and meters. Similar to the trend of commercial electronic products toward being light, thin, short and small, optoelectronic devices are also in the micro-packaging era, and the chip scale packaging is developed. In addition, with the development of optoelectronic technology, solid state lighting has been remarkably improved in terms of lighting efficiency, operating life, brightness, etc., and thus light emitting diodes have been applied to general lighting applications in recent years.

In recent years, a technology of a display module using a plurality of light emitting diodes as pixels is being developed. However, how to use the led to manufacture the pixel with smaller volume is still an important issue in this field.

Disclosure of Invention

To solve the above problems, the present invention provides a light emitting device, such as a light emitting display module, comprising: a substrate; the plurality of light emitting diode modules are arranged on the substrate in an array mode; the light emitting diode module comprises a plurality of mutually separated packaged light emitting units, and each packaged light emitting unit comprises a plurality of photoelectric units, a first supporting structure and a frame; the plurality of photoelectric units are covered by the first supporting structure, and the frame surrounds the first supporting structure and the plurality of photoelectric units.

In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Brief description of the drawings

Fig. 1A shows a cross-sectional view of a photovoltaic cell in an embodiment of the invention.

FIG. 1B is a top view of the optoelectronic unit of FIG. 1A without a bonding pad.

Fig. 1C shows a top view of the photovoltaic unit of fig. 1A.

Fig. 2A shows a cross-sectional view of a photovoltaic cell in an embodiment of the invention.

Fig. 2B shows a top view of the photovoltaic unit of fig. 2A.

FIG. 3A shows a cross-sectional view of a photovoltaic unit in an embodiment of the present invention.

Fig. 3B shows a top view of the photovoltaic unit of fig. 3A.

Fig. 4A to 4C illustrate a method of fabricating an optoelectronic device according to an embodiment of the present invention.

Fig. 5A shows a cross-sectional view of an optoelectronic device in an embodiment of the invention.

Fig. 5B shows a cross-sectional view of an optoelectronic device in an embodiment of the invention.

Fig. 5C shows a cross-sectional view of an optoelectronic device in an embodiment of the invention.

FIGS. 6A-6B, 7A-7B, 8, 9A-9B, 10A-10D, 11A-11B, 12A-12B, 13A-13B, and 14 illustrate a method of fabricating a light emitting device in an embodiment of the invention.

FIGS. 15A-15B illustrate a packaged LED unit in accordance with one embodiment of the present invention.

Fig. 16A to 16C show a led display module according to an embodiment of the invention.

Fig. 17 is a cross-sectional view of a led module according to an embodiment of the invention.

FIGS. 18A-18B show top views of a packaged LED unit in accordance with one embodiment of the present invention.

Fig. 18C-18D show bottom views of packaged led units according to an embodiment of the invention.

Fig. 18E-18F show bottom views of packaged led units in another embodiment of the invention.

FIGS. 19A-19D illustrate steps in the fabrication of an LED display module in which the packaged LED units are used in accordance with one embodiment of the present invention.

Description of the symbols

1.2, 3, 77B, 77G, 77R photoelectric unit

10. 100, 100' temporary carrier plate

101 substrate

102 light emitting structure

102a first type semiconductor layer

102b light-emitting layer

102c a first type semiconductor layer

103 first protective layer

1031 extension part

104 first connecting pad

105 second connection pad

108 transparent conductive layer

111. 111', 111' wavelength conversion layer

115. 280 reflecting layer

12 connecting layer

16. 73, 73' first support structure

16t space

18. 71, 71' second support structure

203 second protective layer

204 first extension pad

205 second extension pad

301 tip

302 bottom end

303 protective layer

3031 first extension part

3032 second extension part

304 first electrode pad

305 second electrode pad

4. 4a, 4b, 4c photoelectric element

40 conductive structure

401 first conductive structure

402 second conductive structure

70 temporary substrate

75 conductive element

79 stitch

86B, 86R, 86G, 87 end points

9 LED display module

90 LED module

900 Package LED Unit

9001 first side

9002 second side

9011 first side

9012 second side

9013 Metal wire

901 first carrier plate

902 second bearing plate

91 substrate

92 frame

Detailed Description

The following embodiments will explain the concept of the present invention along with the accompanying drawings, in which like or similar parts are designated by the same reference numerals, and in which the shape or thickness of elements may be enlarged or reduced. It is to be noted that elements not shown or described in the drawings may be of a type known to those skilled in the art.

Fig. 1A shows a cross-sectional view of a photovoltaic unit 1 according to an embodiment of the present invention. The photoelectric unit 1 has one surfaceProduct less than 50mil²The bottom surface S1, for example, has an area of 4mil x 6mil or 2mil x 5 mil. The photovoltaic unit 1 includes a substrate 101 having a bottom surface S1; and a light emitting structure 102 formed on the substrate 101 on a side opposite to the bottom surface S1. The light emitting structure 102 includes a first semiconductor layer 102a having a first polarity; a second semiconductor layer 102c having a second polarity; and a light emitting layer 102b is formed between the first semiconductor layer 102a and the second semiconductor layer 102 c. The first semiconductor layer 102a and the second semiconductor layer 102c provide electrons and holes, respectively, so that the electrons and the holes are combined in the light-emitting layer 102b to emit light. The material of the light emitting layer 102b includes a group iii-v semiconductor material. The photoelectric cell 1 may emit red, green, or blue light depending on the material of the light emitting layer 102 b. A first protective layer 103 is formed on one or more surfaces of the light emitting structure 102 and is composed of one or more dielectric materials, such as silicon dioxide or silicon nitride. A transparent conductive layer 108 is formed on the second semiconductor layer 102c of the light emitting structure 102 to diffuse current. The transparent conductive layer 108 is made of a conductive material, such as Indium Tin Oxide (ITO), Cadmium Tin Oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. A first connection pad 104 is formed on the first passivation layer 103 and electrically connected to the first semiconductor layer 102 a. A second connecting pad 105 is formed on the light emitting structure 102 and electrically connected to the second semiconductor layer 102c through the transparent conductive layer 108. The first passivation layer 103 is formed to prevent a short circuit path between the first electrode pad 104 and the second electrode pad 105 through the transparent conductive layer 108. In this embodiment, the first protection layer 103 has an extension portion 1031 covering the light emitting layer 102b, the second semiconductor layer 102c and the sidewall of the transparent conductive layer 108. The first connection pad 104 covers the extension 1031 of the first protection layer 103. The first passivation layer 103 and the first connection pads 104 have an L-shaped cross section. Fig. 1B shows a top view of the optoelectronic unit 1 of fig. 1A, and does not show a first connecting pad 104 and a second connecting pad 105. The first protective layer 103 is formed on the transparent conductive layer 108 and covers approximately half of the area of the transparent conductive layer 108. A portion of the first semiconductor layer 102a is exposed to electrically connect with the first connection pad 104. Fig. 1C shows a top view of the photovoltaic unit 1 of fig. 1A.

Fig. 2A shows a cross-sectional view of a photovoltaic unit 2 according to an embodiment of the present invention. The photoelectric unit 2 has an area less than 50mil²The bottom surface S1, for example, has an area of 4mil x 6mil or 2mil x 5 mil. Referring to fig. 2A, the photoelectric cell 2 further includes a first extension pad 204, except for portions similar to the photoelectric cell 1; a second extension pad 205; and a second passivation layer 203. The first extension pad 204 and the second extension pad 205 may be formed on the first connection pad 104 and the second connection pad 105, respectively, and electrically connected to each other. The second passivation layer 203 is used to physically separate the first extension pad 204 and the second extension pad 205. The second protection layer 203 is composed of one or more dielectric materials, such as silicon dioxide or silicon nitride. Fig. 2B shows a top view of the photovoltaic unit 2 of fig. 2A. The first extension pad 204 is larger than the first connection pad 104. The second extension pad 205 is larger than the second connection pad 105.

Fig. 3A shows a cross-sectional view of a photovoltaic unit 3 in an embodiment of the invention. The photoelectric unit 3 has an area less than 50mil²The bottom surface S1, for example, has an area of 4mil x 6mil or 2mil x 5 mil. Referring to fig. 3A, the photovoltaic element 3 includes a substrate 101 having a bottom surface S1; and a light emitting structure 102 formed on the substrate 101. The light emitting structure 102 includes a first semiconductor layer 102a having a first polarity; a second semiconductor layer 102c having a second polarity; and a light emitting layer 102b is formed between the first semiconductor layer 102a and the second semiconductor layer 102 c. The first semiconductor layer 102a and the second semiconductor layer 102c provide electrons and holes, respectively, so that the electrons and the holes are combined in the light-emitting layer 102b to emit light. The material of the light emitting layer 102b includes a group iii-v semiconductor material. The photoelectric cell 3 may emit red, green or blue light depending on the material of the light emitting layer 102 b. The optoelectronic unit further comprises a protective layer 303 formed on one or more surfaces of the light-emitting structure 102, wherein the protective layer 303 is comprised of one or more dielectric materials, such as silicon dioxide or silicon nitride. A transparent conductive layer 108 is formed on the second semiconductor layer 102c of the light emitting structure 102 to diffuse current. The transparent conductive layer 108 is made of a conductive material, such as Indium Tin Oxide (ITO), Cadmium Tin Oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. A firstThe electrode pad 304 and a second electrode pad 305 are formed on the same side of the substrate 101 and are electrically connected to the first semiconductor layer 102a and the second semiconductor layer 102c, respectively. The first electrode pad 304 and the second electrode pad 305 are physically separated from each other. In this embodiment, the protection layer 303 has a first extension portion 3031 covering the sidewalls of the light emitting layer 102b, the second semiconductor layer 102c and the transparent conductive layer 108. The protection layer 303 further has a second extension portion 3032 covering the sidewalls of the light emitting layer 102b, the first and

second semiconductor layers

102a and 102c and the transparent conductive layer 108. The first electrode pad 304 covers the first extension portion 3031 of the protective layer 303. The second electrode pad 305 covers the second extension portion 3032 of the protective layer 303. The first electrode pad 304 and the second electrode pad 305 each have an L-shaped cross section. Fig. 3B shows a top view of the photovoltaic unit 3 of fig. 3A.

As shown in fig. 1C, the first connecting pad 104 and the second connecting pad 105 can be used as an electrical connection path for connecting to an external power source (not shown). The first extension pad 204 and the second extension pad 205 shown in fig. 2B or the first electrode pad 304 and the second electrode pad 305 shown in fig. 3B can also have functions similar to those of the first connection pad 104 and the second connection pad 105, respectively. Taking the first connection pad 104 as an example, if the upper surface area of the first connection pad 104 has a large enough area, the optoelectronic unit 1 can be easily connected or aligned with an external structure, such as an external power source. The formation of the first extending pad 204 on the first connection pad 104 can also enlarge the connection area, so that the optoelectronic unit 2 can tolerate a larger alignment error than the optoelectronic unit 1. Therefore, the upper surface area of the first electrode pad 304 may be similar to the upper surface area of the first extension pad 204, and the upper surface area of the second electrode pad 305 may be similar to the upper surface area of the second extension pad 205.

Fig. 4A to 4C illustrate a method for manufacturing an optoelectronic device 4 according to an embodiment of the present invention. Referring to fig. 4A, a plurality of photovoltaic units, which may be one or more of the above-described

photovoltaic units

1, 2, 3, may be provided on a temporary carrier 10. The material of the temporary carrier 10 may include at least one of a conductive material and an insulating material. The conductive material includes a carbonaceous substance, a composite material, a metal, a semiconductor, or a combination thereof. Carbonaceous materials such as diamond, diamond-like carbon, graphite or carbon fiber. Composite materials, such as Metal Matrix Composites (MMC), Ceramic Matrix Composites (CMC), and/or Polymer Matrix Composites (PMC). A semiconductor such as silicon, zinc selenide, gallium arsenide, silicon carbide, gallium phosphide, indium phosphide, lithium gallate, or lithium aluminate. Metals such as nickel, copper, or aluminum. The insulating material includes an organic material, an inorganic material, or a combination thereof. Organic materials such as Epoxy Resin (Epoxy), Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Acrylic Resin (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide), Fluorocarbon Polymer (Fluorocarbon Polymer). Inorganic materials such as sapphire, zinc oxide, diamond, glass, quartz or aluminum nitride.

Referring to fig. 4A to 4C, taking the optoelectronic unit 3 as an example, a connection layer 12 may be further provided to connect the optoelectronic units 3 to a temporary carrier 10. Each of the photoelectric cells 3 may comprise a light emitting diode chip having a first electrode pad 304 and a second electrode pad 305, as shown in fig. 3A, connected to the connection layer 12. The tie layer 12 includes one or more adhesive materials. The adhesive material may be an insulating material, a UV tape, or a thermal release tape. The insulating material includes, but is not limited to, benzocyclobutene (BCB), Su8, epoxy, or spin-on-glass (SOG).

After the above steps, the photovoltaic unit 3 may be encapsulated by the first supporting structure 16, as shown in fig. 4B. The first support structure 16 may be a transparent structure, and is composed of one or more organic materials or inorganic materials. The organic material may be Epoxy (Epoxy), Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Acrylic (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide), or Fluorocarbon Polymer (Fluorocarbon Polymer). The inorganic material may be glass, alumina, SINR, or coated spin-on glass (SOG). The first supporting structure 16 may fill a space 16t between two adjacent photoelectric cells 3. The first support structure 16 covering the photovoltaic unit 3 can fix and support the photovoltaic unit 3 and increase the mechanical strength of the photovoltaic unit 3. In addition, a surface S3 of the first supporting structure 16 may be a smooth surface or a rough surface. A second supporting structure 18 may be further formed on the first supporting structure 16 to strengthen the supporting of the photovoltaic unit 3 and the first supporting structure 16. The second support structure 18 comprises a different material than the first support structure 16 or has a greater stiffness than the first support structure 16.

As shown in fig. 4C, after the first and second supporting

structures

16 and 18 are formed, the temporary carrier 10 and the connecting layer 12 are removed to expose the plurality of photoelectric units 3 and the first supporting structures 16. A plurality of conductive structures 40 formed on the exposed photoelectric units 3 and the first support structures 16 at positions corresponding to the second support structures 18. The conductive structure 40 can be connected to the first electrode pad 304 and the second electrode pad 305 of the photovoltaic unit 3, respectively, as shown in fig. 3A. Each conductive structure 40 has a top surface area (not shown) larger than one of the first connecting pad 104 and the second connecting pad 105 (shown in fig. 5A); or greater than or equal to one of the first extension pad 204 and the second extension pad 205 (shown in fig. 5B), or greater than or equal to one of the first electrode pad 304 and the second electrode pad 305 (shown in fig. 5C). Finally, the plurality of photoelectric elements 4 are cut along the opening 17 to be separated from each other, as shown in fig. 4C. At least a length, width, and/or area of the photovoltaic element 4 is of the same order of magnitude as the

photovoltaic cells

1, 2, or 3.

Fig. 5A shows a cross-sectional view of a photovoltaic device 4A in an embodiment of the present invention, which is fabricated by the steps of fig. 4A to 4C. The photoelectric element 4a includes a photoelectric unit 1; a first support structure 16 surrounding the photovoltaic unit 1; and a second support structure 18 formed on the first support structure 16. Preferably, the first supporting structure 16 may be formed in a shape surrounding the photovoltaic unit 1. The conductive structure 40 includes a first conductive structure 401 and a second conductive structure 402 formed on the optoelectronic unit 1 and respectively connected to the first connection pad 104 and the second connection pad 105 of the optoelectronic unit 1. The area of the first conductive structure 401 is larger than that of the first connection pad 104, and the area of the second conductive structure 402 is larger than that of the second connection pad 105. The first passivation layer 103 disposed on the light emitting structure 102 can physically separate the first bonding pad 104 and the second bonding pad 105 and protect the light emitting structure 102. A reflective layer 280 may be formed between the photovoltaic unit 1 and the conductive structure 40 and further formed on the first support structure 16. The reflective layer 280 may be composed of one or more reflective materials, such as a dielectric material or a metal oxide. Dielectric materials such as silicon dioxide, silicon nitride; metal oxides such as titanium dioxide or other white substances. In one embodiment of the present invention, the reflective layer 280 may be a single layer or a laminated layer. The volume ratio of the photovoltaic element 4a to the photovoltaic unit 1 is between 1.2:1 and 10:1, preferably between 2:1 and 5: 1. The second support structure 18 has a first width W1. The photovoltaic unit 1 has a second width W2. The first width W1 is greater than the second width W2. The first connection pad 104 is separated from the second connection pad 105 by a first distance (d1), and the first conductive structure 401 is separated from the second conductive structure 402 by a third distance (d 3). A first distance between the first electrode pad 104, i.e., the second electrode pad 105, is greater than a third distance between the first conductive structure 401 and the second conductive structure 402. A reflective layer 280 may be formed between the photovoltaic unit 1 and the conductive structure 40 and further formed on the first support structure 16. The reflective layer 280 may be composed of one or more reflective materials, such as a dielectric material or a metal oxide. Dielectric materials such as silicon dioxide, silicon nitride; metal oxides such as titanium dioxide or other white substances. In one embodiment of the present invention, the reflective layer 280 may be a single layer or a laminated layer.

Fig. 5B shows a cross-sectional view of a photovoltaic device 4B in an embodiment of the present invention, which is fabricated by the steps of fig. 4A to 4C. The photoelectric element 4b includes a photoelectric cell 2; a first support structure 16 formed on the photovoltaic unit 2; and a second support structure 18 formed on the first support structure 16. The first support structure 16 may be formed in a shape surrounding the photovoltaic unit 2. The conductive structure 40 includes a first conductive structure 401 and a second conductive structure 402 formed on the photovoltaic unit 2 and connected to the first extension pad 204 and the second extension pad 205, respectively. A reflective layer 280 may be formed over the photovoltaic element 2 and the first support structure 16. The reflective layer 280 may be formed of one or more reflective materials, such as a dielectric material or a metal oxide. Dielectric materials such as silicon dioxide, silicon nitride; metal oxides such as titanium dioxide or other white substances. In one embodiment of the present invention, the reflective layer 280 may be a single layer or a laminated layer. The first conductive structure 401 has an area greater than or equal to the first extension pad 204, and the second conductive structure 402 has an area greater than or equal to the second extension pad 205. The volume ratio of the photovoltaic element 4b to the photovoltaic unit 2 is between 1.2:1 and 10:1, preferably between 2:1 and 5: 1. The second support structure 18 has a first width W1; the photoelectric element 2 has a second width W2; the first width W1 is greater than the second width W2, e.g., the first width is at least 1.5 times the second width. The first connection pad 104 is separated from the second connection pad 105 by a first distance (d1), the first extension pad 204 is separated from the second extension pad 205 by a second distance (d2), and the first conductive structure 401 is separated from the second conductive structure 402 by a third distance (d 3). A first distance between the first electrode pad 104 and the second electrode pad 105 is greater than a second distance between the first extension pad 204 and the second extension pad 205, and is further greater than a third distance between the first conductive structure 401 and the second conductive structure 402. However, FIG. 5B is by way of illustration only and not by way of limitation. The second distance may be equal to, greater than, or less than the third distance.

Fig. 5C shows a cross-sectional view of a photovoltaic device 4C in an embodiment of the present invention, which is fabricated by the steps of fig. 4A to 4C. The photoelectric element 4c includes a photoelectric cell 3; a first support structure 16 formed on the photovoltaic unit 3; and a second support structure 18 formed on the first support structure 16. The photovoltaic unit 3 may be surrounded by a first support structure 16. A first conductive structure 401 and a second conductive structure 402 are formed on the photoelectric cell 3 and are connected to the first electrode pad 304 and the second electrode pad 305, respectively. A reflective layer 280 may be formed on the photovoltaic element 3 and the first support structure 16. The reflective layer 280 may be formed of one or more reflective materials, such as a dielectric material or a metal oxide. Dielectric materials such as silicon dioxide, silicon nitride; metal oxides such as titanium dioxide or other white substances. The first conductive structure 401 has an area greater than or equal to the first electrode pad 304, and the second conductive structure 402 has an area greater than or equal to the second electrode pad 305. The volume ratio of the photovoltaic element 4c to the photovoltaic unit 3 is between 1.2:1 and 10:1, preferably between 2:1 and 5: 1. The second supporting structure 18 has a first width W1 and the photoelectric unit 3 has a second width W2. The first width W1 is greater than the second width W2, e.g., the first width is at least 1.5 times the second width. The first electrode pad 304 is separated from the second electrode pad 305 by a fourth distance (d4), and the first conductive structure 401 is separated from the second conductive structure 402 by a third distance (d 3). The fourth distance between the first electrode pad 304 and the second electrode pad 305 is greater than or equal to the third distance between the first conductive structure 401 and the second conductive structure 402. However, fig. 5C is by way of illustration only and not by way of limitation.

Fig. 6A to 6B, 7A to 7B, 8, 9A to 9B, and 10A to 10B illustrate a method of manufacturing a light emitting device according to an embodiment of the present invention. In FIGS. 6A-6B, 7A-7B, 8, 9A-9B, and 10A-10B, the photovoltaic element 3 is illustrated in the following description, but the steps can also be applied to one or more of the

photovoltaic elements

1, 2 or the

photovoltaic elements

4a, 4B, 4 c. Fig. 6A shows a top view of a plurality of photoelectric cells 3. The photoelectric element 3 has a first electrode pad 304 and a second electrode pad 305 and are formed on a temporary substrate 70 at a first pitch P1 therebetween. In another embodiment, the photovoltaic cells 3 may be grown on a growth substrate (not shown) at a first pitch P1. Fig. 6B shows a cross-sectional view along the line Y-Y' in fig. 6A, and a temporary carrier 100 is provided to transfer the optoelectronic unit 3 to a temporary carrier 100. In detail, the optoelectronic unit 3 can be transferred from the temporary substrate 70 to a predetermined position of the temporary carrier 100 by manual picking or mechanical picking. The optoelectronic element 3 may also be transferred to the temporary carrier 100 through an adhesive layer (not shown). In addition, the photoelectric element 3 may be transferred one by one or batch (batch) by one.

Fig. 7A is a top view showing a plurality of optoelectronic units 3 formed on a temporary carrier 100 according to the present invention, and fig. 7B is a cross-sectional view taken along line Z-Z' in fig. 7A. Fig. 7B shows the photoelectric cells 3 transferred from the temporary substrate 70 or the growth substrate (not shown) to the temporary carrier 100 with a second pitch (P2) therebetween. The temporary carrier 100 comprises similar materials as the temporary carrier 10. The material of the temporary carrier 100 may include at least one of a conductive material and an insulating material. The conductive material includes a carbonaceous substance, a composite material, a metal, a semiconductor, or a combination thereof. Carbonaceous materials such as diamond, diamond-like carbon, graphite or carbon fiber. Composite materials, such as Metal Matrix Composites (MMC), Ceramic Matrix Composites (CMC), and/or Polymer Matrix Composites (PMC). A semiconductor such as silicon, zinc selenide, gallium arsenide, silicon carbide, gallium phosphide, indium phosphide, lithium gallate, or lithium aluminate. Metals such as nickel, copper, or aluminum. The insulating material includes an organic material, an inorganic material, or a combination thereof. Organic materials such as Epoxy Resin (Epoxy), Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Acrylic Resin (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide), Fluorocarbon Polymer (Fluorocarbon Polymer). Inorganic materials such as sapphire, zinc oxide, diamond, glass, quartz or aluminum nitride. In one embodiment, the temporary carrier 100 may be an adhesive tape including one or more adhesive layers for connecting the optoelectronic units. The optoelectronic units 3 are formed on a temporary carrier 100 with a second pitch P2, where the second pitch P2 is greater than the first pitch P1. That is, when the photoelectric cells are transferred from the temporary substrate 70 to the temporary carrier 100, the space between two adjacent photoelectric cells is enlarged. Therefore, other photoelectric units may be disposed in this enlarged space. For example, as shown in fig. 8, a first plurality of blue light-emitting photovoltaic cells 77B are transferred to the temporary carrier 100, and a second plurality of green light-emitting photovoltaic cells 77G and/or a third plurality of red light-emitting photovoltaic cells 77R are disposed (or transferred) on the temporary carrier 100 at an appropriate distance by the method shown in fig. 6A-7B because the distance between two adjacent photovoltaic cells 77B is enlarged. Thus, the

photovoltaic cells

77B, 77G, 77R may be arranged in a repeating blue-green-red pattern. In another embodiment, the order and number of the

photoelectric cells

77B, 77G, 77R can be adjusted. At least one of the first set of photovoltaic cells 77B, the second set of photovoltaic cells 77G, and the third set of photovoltaic cells 77R may have a structure similar to

photovoltaic cells

1, 2, or 3.

Fig. 9A shows a top view of a photovoltaic unit according to an embodiment of the present invention, the photovoltaic unit having a first electrode pad 304 and a second electrode pad 305 formed on a first supporting structure 73. FIG. 9B shows a cross-sectional view along line A-A' of FIG. 9A. The first support structure 73 may be formed to have a cavity configured to receive at least one photovoltaic cell 3. The first support structure 73 covering the photoelectric element 3 can fix and support the photoelectric unit 3 and increase the mechanical strength of the photoelectric unit 3. The first supporting structure 73 may be a transparent structure, and is made of one or more transparent materials. The transparent material is composed of one or more organic materials or inorganic materials. The organic material may be Epoxy (Epoxy), Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Acrylic (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide), or Fluorocarbon Polymer (Fluorocarbon Polymer). The inorganic material may be glass, alumina, SINR, or coated spin-on glass (SOG). In one embodiment, a wavelength conversion layer 111', as shown in fig. 9A, may be a strip shape and surrounds each of the photoelectric units 3 and is formed on a portion of the surface 100s of the temporary carrier 100. In another embodiment, a wavelength conversion layer may be formed to surround each photoelectric unit 3 and formed on the entire surface 100s of the temporary carrier 100.

Fig. 10A shows a cross-sectional view of a plurality of photovoltaic cells 3 according to an embodiment of the present invention, the photovoltaic cells 3 having a first electrode pad 304 and a second electrode pad 305 and further formed on a second supporting structure 71. FIG. 10B shows a cross-sectional view taken along line B-B' of FIG. 10A. The second support structure 71 may comprise a different material than the first support structure 73 or have a greater stiffness than the first support structure 73. The second support structure 71 may include one or more transparent materials such as sapphire, diamond, glass, epoxy, quartz, acryl, silicon oxide, aluminum nitride, zinc oxide, silicone gel, or a combination thereof. The second support structure 71 is transparent to light, such as sunlight or light emitted by a photovoltaic element. The thickness of the second support structure 71 may be between 300 μm and 700 μm. In addition, a wavelength conversion layer 111 surrounds each photoelectric cell. At least one surface of the second support structure 71 is a flat surface, such as the surface S2 shown in fig. 10B; or a rough surface, such as surface S4 shown in fig. 10C; or a curved surface such as surface S6 shown in fig. 10D. The surface S4 of the second support structure 71 is serrated. The curved surface S6 of the second support structure 71 has a plurality of curved protrusions corresponding in position to the photovoltaic cells, thereby increasing light extraction.

Fig. 11A shows a top view of a plurality of photovoltaic units supported by a second support structure 71 and a first support structure 73 in accordance with an embodiment of the present invention. As shown in fig. 10B, after the optoelectronic unit 3 is removed from a temporary carrier 100 and the electrode pads 304, 305 (the connecting

pads

104, 105 or the extending pads 204, 205) are exposed, the second supporting structure 71 and the first supporting structure 73 are flipped over. FIG. 11B shows a cross-sectional view taken along line C-C' of FIG. 11A.

Fig. 12A and 13A show top views of the photoelectric cells 3, in which the respective electrode pads 304, 305 (the

connection pads

104, 105 or the extension pads 204, 205) of a plurality of photoelectric cells 3 are connected in series with each other via the conductive member 75. In another embodiment, the photovoltaic cells 3 may be connected in parallel to each other by conductive elements 75 (not shown). FIGS. 12B and 13B show cross-sectional views taken along line D-D 'in FIG. 12A and line E-E' in FIG. 13A, respectively. As shown in fig. 12B and 13B, the conductive element 75 has a portion disposed on the first supporting structure 73 between the two photoelectric units. The reflective layer 115 is formed on the photoelectric cell 3 by photolithography and etching processes. The reflective layer 115 may be composed of one or more reflective materials, such as dielectric materials or metal oxides. Dielectric materials such as silicon dioxide, silicon nitride; metal oxides such as titanium dioxide or other white substances. In one embodiment of the present invention, the reflective layer 115 may be a single layer or a laminated layer. FIGS. 12A-12B show that a portion of the surface S8 of the first supporting structure 73 is covered by the reflective layer 115, and a portion of the surface S9 of the first supporting structure 73 not covered by the reflective layer 115 is covered by the wavelength conversion layer 111'; and a portion of the surface S10 of the first supporting structure 73 not covered by the reflective layer 115 and the wavelength conversion layer 111 ″ is covered by the conductive element 75. The reflective layer 115 is formed on the first support structure 73 between the two photovoltaic cells. The materials of the wavelength conversion layer 111 "and the wavelength conversion layer 111 may be the same or different. The conductive element 75 comprises one or more metals. Metals such as silver, gold, titanium, copper, or alloys thereof.

Fig. 13A-13B illustrate another embodiment, in which a portion of the surface S8 of the first supporting structure 73 is covered by the reflective layer 115, and a portion of the surface S10 of the first supporting structure 73 that is not covered by the reflective layer 115 is covered by the conductive element 75.

As shown in fig. 14, the

optoelectronic units

77B, 77R, and 77G on the temporary carrier 100 are supported by the second support structure 71 and the first support structure 73 by the method shown in fig. 9A-10B, and the connection pads 104 and 105 (or the

extension pads

204 and 205, or the electrode pads 304 and 305) are exposed (not shown). Conductive elements 75 (not shown) are formed to electrically connect the

photoelectric cells

77B, 77R, 77G. In one embodiment, as shown in FIG. 15A, three

terminals

86B, 86R, 86G comprising one or more metal materials are formed to electrically connect the

photoelectric cells

77B, 77R, 77G, respectively. The terminals 87 are further formed to electrically connect the

photoelectric cells

77B, 77R, 77G, so that the

photoelectric cells

77B, 77R, 77G are connected in parallel with each other. The forming method of the

terminals

86B, 86R, 86G, 87 includes one of electroplating, chemical deposition and metal wiring. At least one of the

terminals

86B, 86R, 86G, 87 may be comprised of a metal, such as gold, silver, titanium, copper, or combinations thereof. After defining rows and columns in the array pattern, the plurality of

photoelectric units

77B, 77R, 77G can be separately fabricated as packaged light emitting units (hereinafter, packaged LED units) and disposed on the second support structure 71 and the first support structure 73, as shown in fig. 15B. The packaged LED unit includes at least one photovoltaic unit 77B, at least one photovoltaic unit 77R, and at least one photovoltaic unit 77G, which are arranged in a line. The encapsulated LED unit may be a pixel (pixel) in an LED display module. Optionally, a plurality of packaged LED units can be further mounted on a carrier and connected to each other to form a pixel (not shown) in an LED display module.

Fig. 16A to 16C show a light emitting display module 9 (hereinafter referred to as LED display module) according to an embodiment of the invention. Fig. 16A shows a schematic diagram of an LED display module 9. Fig. 16B shows a top view of the LED display module 9. Fig. 16C shows a top view of the light emitting diode module 90 (hereinafter referred to as an LED module). The LED display module 9 includes a substrate 91 and a plurality of LED modules 90 fixed on the substrate 91. The LED modules 90 and the adjacent LED modules 90 are located next to each other, i.e., no gap exists between the adjacent LED modules 90. In the present embodiment, each LED module 90 is rectangular and has a length x and a width y. The LED display module 9 has m LED modules 90 in the length direction and n LED modules 90 in the width direction, so that the LED display module 9 is rectangular and has a length m x and a width n y; wherein m and n are positive integers; m x: n x y 16: 9 or 4: 3; m: n is 16: 9 or 4: 3.

as shown in fig. 16A to 16C and fig. 17, the LED module 90 includes a first carrier 901; a second carrier plate 902 on which the first carrier plate 901 is placed; and a plurality of packaged LED units 900 disposed on the first carrier 901. The packaged LED units 900 are spaced apart from each other by a first distance P₃The packaged LED units 900 spaced apart from each other and located at two ends of each row and each column on the first carrier 901 are separated from the corresponding edge of the first carrier 901 by a second distance P ₃2; wherein P is₃<0.6 mm. For example, the packaged LED unit a1 has a first side 9001 and a second side 9002, and the first carrier 901 has a first side 9011 and a second side 9012. The first side 9001 is spaced from the first side 9011 by a distance P₃/2 and the distance between the second side 9002 and the second side 9012 is P₃/2. In one embodiment, the packaged LED unit is a square and has a side length (l) equal to the first distance (P)₃) That is, the ratio of the side length of the packaged LED units to the distance between the packaged LED units (first distance) is 1: 1 to meet a predetermined design requirement. The LED display module 9 has a resolution a x b, when the LED display module 9 is rectangular and has a diagonal line (L) and the resolution a: b is 16: 9 (e.g., 1920 x 1080 resolution) have a side length (i, in inches) of no more than (0.435 x L)/a or (0.245 x L)/b. When the LED display module 9 is rectangular and has a diagonal line (L) and the resolution ratio a: b is 4: 3 (e.g. in1920 x 1440), the side length (L, in inches) is not more than (0.4 x L)/a or (0.3 x L)/b. In one embodiment, when the resolution ratio a: b is 16: length of side (i in inches) and first distance (P) at time 9₃In inches) is not greater than (0.87L)/a or (0.49L)/b. Alternatively, when the resolution ratio a: b is 4: length of side (i in inches) and first distance (P) at time 3₃In inches) is not greater than (0.8 x L)/a or (0.6 x L)/b. The side length (l) is less than or equal to the sum (S).

Fig. 17 shows a cross-sectional view of one of the LED modules 90. In detail, the first carrier 901 includes a plurality of metal lines 9013 formed therein for electrically connecting the packaged LED unit 900. The second carrier 902 has a circuit (not shown) to electrically connect the metal lines 9013 of the first carrier 901. In addition, an integrated circuit may be embedded in the second carrier 902 and control the electrical operation state of the packaged LED unit 900 through the metal wire 9013. The integrated circuit includes a flip-chip structure. The first and

second carrier plates

901, 902 may comprise a thermoplastic material, a thermosetting material, or a ceramic material. The thermoplastic material comprises Polyimide resin (Polyimide resin), or polytetrafluoroethylene (polytetrafluoroethylene). The thermoset material comprises an Epoxy resin (Epoxy), a Bismaleimide Triazine resin (bismalimide Triazine), or a combination thereof. The ceramic material comprises alumina, aluminum nitride, or silicon aluminum carbide.

Fig. 18A and 18B show top views of a packaged LED unit 900 in an embodiment of the invention. The packaged LED unit 900 includes an opaque frame 92 (shown in fig. 19A-19D) and the

photovoltaic units

77B, 77G, 77R are arranged in a straight line within the frame 92. Alternatively, the

photoelectric cells

77B, 77G, 77R may be arranged in a triangular shape, as shown in FIG. 18B. It should be noted that, according to actual requirements, the packaged LED unit 900 may include a plurality of

photoelectric units

77B, 77G, 77R arranged in a predetermined shape. Fig. 18C to 18D show bottom views of the packaged LED unit 900. The packaged LED unit 900 further comprises a plurality of pins 79(pin) formed on the first support structure 73 'opposite to the second support structure 71' (as shown in fig. 19D), and electrically connected to the

photoelectric units

77B, 77G, 77R and electrically connected to the first carrier board 9 through the conductive elements 7501 (as shown in fig. 17). As shown in fig. 18C, three pairs of pins 79 (positive and negative) are connected to the

photoelectric cells

77B, 77G, and 77R, respectively. As shown in fig. 18D, there may be four pins 79 (one common negative and three positive or one common positive and three negative). In fig. 18C and 18D, the pin 79 is electrically connected to the

electrode pads

304, 305 of the

photoelectric cells

77B, 77G, 77R through the conductive element 75. As shown in fig. 18E and 18F, the pins 79 may partially or completely cover the electrode pads 304, 305 (or the

connection pads

104, 105 or the extension pads 204, 205) to form an electrical connection with the optoelectronic unit. Compared to the conventional packaged LED unit with dimensions of 1.0mm x 1.0mm x 0.2mm, the packaged LED unit 900 disclosed in the present embodiment can have a dimension of less than 0.1mm by the

optoelectronic units

1, 2, 3 and the manufacturing method described above³Size (volume). The packaged LED unit 900 has dimensions of 0.5mm x 0.5mm x 0.2mm in this embodiment. Therefore, the LED display module 9 having a higher LED packing density can be manufactured by packaging the LED unit 900.

Fig. 19A to 19D show manufacturing steps of a packaged LED unit 900 applied to the LED display module 9. As shown in fig. 19A, the optoelectronic units 3(1, 2) are arranged on a temporary carrier 100' and a frame 92 surrounds the periphery thereof. As shown in fig. 19B, the photoelectric unit 3 has a top end 301 and a bottom end 302. A first support structure 73' is formed on the top end 301 of the photovoltaic unit 3 and may be made of one or more transparent materials. The transparent material is composed of one or more organic materials or inorganic materials. The organic material may be Epoxy (Epoxy), Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Acrylic (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (Polyetherimide), or Fluorocarbon Polymer (Fluorocarbon Polymer). The inorganic material may be glass, alumina, SINR, or coated spin-on glass (SOG). Second support structure 71 'is formed to support first support structure 73' and may comprise at least one material different from first support structure 73 'or have a greater stiffness than first support structure 73'. The second support structure 71' may be made of one or more transparent materials, such as sapphire, diamond, glass, epoxy, quartz, acryl, silicon oxide, aluminum nitride, zinc oxide, silicon gel, or/and combinations thereof. Furthermore, the second support structure 71' is transparent to light, like sunlight. The thickness of the second support structure 71' may be between 100 μm and 700 μm. As shown in fig. 19C, the temporary carrier 100' is removed to expose the bottom 302 of the optoelectronic unit 3. The frame 92 does not cover the bottom end 302 of the photovoltaic unit 3. As shown in fig. 19D, a pin 79 is formed on the first support structure 73 'opposite to the second support structure 71' to electrically connect the metal lines 9013 (shown in fig. 17) located in the first loading board 901. In this embodiment, the packaged LED unit 900 includes a red light-emitting red photoelectric cell 77R, a green light-emitting green photoelectric cell 77G, and a blue light-emitting blue photoelectric cell 77B. The frame 92 is configured to absorb light and comprises an opaque material, such as plastic with black paint or a unitary structure of plastic mixed with black paint. The plastic includes silicone, epoxy, Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Su8, Acrylic Resin (Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (polyethylenide), Polyurethane (PU), or Polydimethylsiloxane (PDMS).

The LED display module may be applied to a display device such as a billboard or a sports billboard, etc. The LED display module includes a rectangular array of encapsulated LED units as pixels. Each packaged LED unit includes a plurality of light emitting diodes arranged in a predetermined arrangement. In the packaged LED units, the number, color, and arrangement of the LEDs and the spacing between the packaged LED units all affect the visual characteristics of the array in which the pixels are arranged. Displays using smaller volumes of encapsulated LED units have greater resolution.

The above-mentioned embodiments use descriptive technical content and inventive features to enable those skilled in the art to understand the content of the present invention and implement the same, which are not intended to limit the scope of the present invention. That is, any obvious modifications or alterations of the present invention can be made without departing from the spirit and scope of the present invention. For example, the electrical connection is not limited to a series connection. It should be understood that the above-described embodiments of the present invention may be combined with or substituted for one another as appropriate, and are not intended to be limited to the particular embodiments shown.

It is to be understood that various modifications and alterations may be made by those skilled in the art without departing from the spirit and scope of the invention. It is intended that all such modifications and variations of the present invention be included within the scope of the present invention and protected by the following claims.

Claims

1. A light emitting diode module, comprising:

a first encapsulated light emitting diode unit comprising a first photovoltaic unit comprising a first electrode pad and a second electrode pad;

a second encapsulated light emitting diode unit comprising a second photovoltaic unit comprising a third electrode pad and a fourth electrode pad;

the first packaging light-emitting diode unit and the second packaging light-emitting diode unit are positioned on the first bearing plate, and the first electrode pad, the second electrode pad, the third electrode pad and the fourth electrode pad all face the first bearing plate;

the first pin is positioned below the first electrode pad and electrically connected with the first electrode pad;

the second pin is positioned below the second electrode pad and electrically connected with the second electrode pad;

wherein the first packaged led unit further comprises:

an opaque frame surrounding the first photoelectric cell; and

a transparent structure integrally located on the opaque frame, the first photoelectric unit, the first pins and the second pins;

wherein, the first pin is connected with the first bearing plate.

2. The led module of claim 1, wherein the first electrode pad and the first pin overlap each other in a partial region.

3. The led module of claim 1, wherein said first electrode pad and said first pin are electrically connected by a conductive element and do not overlap each other.

4. The led module of claim 1, wherein the first carrier board further comprises a metal wire, and the first pin is connected to the metal wire.

5. The led module of claim 1, wherein said first packaged led unit further comprises a first support structure comprising a cavity, said cavity receiving said first photovoltaic unit.

6. The LED module of claim 5, wherein the first support structure is disposed between the opaque frame and the first photovoltaic cell, covering an upper surface of the first photovoltaic cell and exposing a lower surface of the first photovoltaic cell.

7. The LED module of claim 4, further comprising a second carrier under the first carrier, wherein the second carrier has a circuit electrically connected to the metal lines of the first carrier.

8. The led module of claim 1, wherein the transparent structure comprises a flat light-emitting surface.

9. The led module of claim 8, wherein the first packaged led unit further comprises a third optoelectronic unit, and the light-emitting surface is spaced apart from the first and third optoelectronic units by the same distance.

10. A display module, comprising:

a substrate; and

a plurality of light emitting diode modules according to any one of claims 1 to 9 on the substrate.