CN109003889B - 一种柔性基底上ii-vi族半导体薄膜的制备方法 - Google Patents

一种柔性基底上ii-vi族半导体薄膜的制备方法 Download PDF

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CN109003889B
CN109003889B CN201810851361.5A CN201810851361A CN109003889B CN 109003889 B CN109003889 B CN 109003889B CN 201810851361 A CN201810851361 A CN 201810851361A CN 109003889 B CN109003889 B CN 109003889B
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flexible substrate
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CN109003889A (zh
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王敏
贾良鹏
徐志勇
杨金华
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Hefei University of Technology
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

本发明公开了一种柔性基底上II‑VI族半导体薄膜的制备方法，在柔性基底上制备出高质量的II‑VI族半导体薄膜，且在一定弯曲程度和弯曲次数后仍具有良好的光电性能；其中采用电子束蒸发镀膜法可以保证基底在较低温度下进行目标材料的沉积，有效解决了柔性基底PET存在不耐高温及尺寸稳定性差的问题，同时利用电子束蒸发法可以在柔性基底PET上得到高质量的II‑VI族半导体薄膜，构筑的II‑VI族半导体光电探测器具有良好的光电性能。本发明提供的柔性基底上II‑VI族半导体薄膜的制备方法工艺简单，成本低廉。

Description

一种柔性基底上II-VI族半导体薄膜的制备方法
技术领域
本发明属于半导体材料技术领域，尤其涉及一种柔性基底上II-VI族半导体薄膜的制备方法。
背景技术
随着可穿戴技术的发展，人们对于柔性光电器件的需求变得越来越紧迫，尤其是在医疗和安全应用领域，因此柔性光电器件也得到越来越多的重视。II-VI族半导体带隙覆盖了从远红外到紫外的光谱范围，而且这些材料大多都能实现直接带隙，通过能带工程几乎能实现任何指定的能隙值，具有优秀的光学和电子学性质。这些特性使得II-VI族半导体薄膜在柔性光电器件中具有非常好的应用前景。
然而，现有的II-VI族半导体光电探测器大多都是在硬性基底基础上构筑的，如硅基底等。硅的脆性导致其不具有柔性和可穿戴性。柔性器件因其质量轻，体积小和极高的柔韧性使其具有很广的应用范围，如可以有效降低产品质量和体积，提高空间利用率和产品设计灵活性，能满足更小型和更高密度安装的设计需要，也有助于减少组装工序和增强可靠性。柔性光探测器的快速发展对光敏材料的质量和柔韧性要求越来越高。PET，PEN 等因其价格便宜，透明度高，抗溶剂，是目前使用最广泛的柔性透明基底。有文献报道，将CVD法生长的MoS2薄膜转移到柔性基底PET上构筑的光电探测器表现出良好的光电效应，但同时也存在转移过程复杂，转移成功率不高等问题。现有的II-VI族半导体薄膜的制备方法有分子束外延技术(MBE)、化学气相沉积法(CVD)和磁控溅射法等。这些方法都有各自的缺点，如工艺复杂，生产成本较高以及沉积温度较高等。基于柔性高分子基底熔点较低，不耐高温的特性，如何在较低温度下沉积高质量II-VI族半导体薄膜显得十分重要。
发明内容
本发明目的就是为了弥补已有技术的缺陷，提供一种柔性基底上II-VI族半导体薄膜的制备方法。
本发明是通过以下技术方案实现的：
一种柔性基底上II-VI族半导体薄膜的制备方法，包括以下步骤：
（1）柔性基底PET的准备：裁剪6×8cm大小的PET放置于加热台上烘烤至PET平整，然后在丙酮、乙醇和去离子水中各超声清洗5分钟，吹干后放入等离子清洗机中清洗15分钟；
（2）II-VI族半导体的蒸镀：利用电子束蒸发镀膜在PET表面蒸镀II-VI族化合物半导体，得到II-VI族半导体薄膜/PET；
（3）II-VI族半导体光电探测器的构筑：将条带掩模板固定在准备好的柔性基底PET上蒸镀II-VI族半导体，得到条带状的II-VI族半导体薄膜，再利用配套的电极掩模板对好之前蒸镀的条带薄膜，放入镀膜机中蒸镀10 nm Cr，100 nm Au作为电极，得到构筑好的II-VI族半导体光电探测器。
所述基底PET厚度控制为45-55μm。
所述步骤1中加热台烘烤条件控制为90℃下烘烤4-5分钟。
所述步骤2中蒸镀速率为0.5 Å/s，膜厚100nm。
本发明的优点是：
（1）利用电子束蒸发法镀膜过程中样品可以保持相对低温的特点，有效的解决了由于柔性基底不耐高温带来的器件构筑困难的问题。
（2）通过这种新的柔性基底上II-VI族半导体薄膜的制备方法得到的II-VI族半导体薄膜平整度高，结晶度好。
（3）构筑的光电探测器具有良好的光电效应，且在一定弯曲程度和弯曲次数后仍具有良好的光电性能。
（4）这种柔性基底上II-VI族半导体薄膜的制备方法工艺简单，成本低廉。
具体实施方式
以下结合具体的实例对本发明的技术方案做进一步说明：
一种柔性基底上II-VI族半导体薄膜的制备方法，包括以下步骤：
（1）柔性基底PET的准备：裁剪6×8cm大小的PET，厚度为50μm，放置于加热台上，在90℃下烘烤5分钟，至PET平整，然后在丙酮、乙醇和去离子水中各超声清洗5分钟，吹干后放入等离子清洗机中清洗15分钟；
（2）II-VI族半导体的蒸镀：利用电子束蒸发镀膜在PET表面蒸镀II-VI族化合物半导体，蒸镀速率为0.5 Å/s，膜厚100nm，得到II-VI族半导体薄膜/PET；
（3）II-VI族半导体光电探测器的构筑：将条带掩模板固定在准备好的柔性基底PET上蒸镀II-VI族半导体，得到条带状的II-VI族半导体薄膜，再利用配套的电极掩模板对好之前蒸镀的条带薄膜，放入镀膜机中蒸镀10 nm Cr，100 nm Au作为电极，得到构筑好的II-VI族半导体光电探测器。

Claims (4)

1.一种柔性基底上II-VI族半导体薄膜的制备方法，其特征在于，包括以下步骤：
（1）柔性基底PET的准备：裁剪6×8cm大小的PET放置于加热台上烘烤至PET平整，然后在丙酮、乙醇和去离子水中各超声清洗5分钟，吹干后放入等离子清洗机中清洗15分钟；
（2）II-VI族半导体的蒸镀：利用电子束蒸发镀膜在PET表面蒸镀II-VI族化合物半导体，得到II-VI族半导体薄膜/PET；
（3）II-VI族半导体光电探测器的构筑：将条带掩模板固定在准备好的柔性基底PET上蒸镀II-VI族半导体，得到条带状的II-VI族半导体薄膜，再利用配套的电极掩模板对好之前蒸镀的条带薄膜，放入镀膜机中蒸镀10 nm Cr，100 nm Au作为电极，得到构筑好的II-VI族半导体光电探测器。
2.根据权利要求1所述的柔性基底上II-VI族半导体薄膜的制备方法，其特征在于，所述基底PET厚度控制为45-55μm。
3.根据权利要求1所述的柔性基底上II-VI族半导体薄膜的制备方法，其特征在于，所述步骤（1）中加热台烘烤条件控制为90℃下烘烤4-5分钟。
4.根据权利要求1所述的柔性基底上II-VI族半导体薄膜的制备方法，其特征在于，所述步骤（2）中蒸镀速率为0.5 Å/s，膜厚100nm。
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CN104465112A (zh) * 2014-12-11 2015-03-25 浙江大学 一种基于柔性衬底的自驱动ZnO基紫外探测器及其制备方法
CN105304729A (zh) * 2015-09-08 2016-02-03 安阳师范学院 基于石墨烯和II-VI族半导体轴向p-n结纳米线阵列的柔性光电子器件及其制备方法
CN105932105A (zh) * 2016-05-26 2016-09-07 合肥工业大学 一种可以识别探测波长的智能薄膜光探测器的构筑方法

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CN104465112A (zh) * 2014-12-11 2015-03-25 浙江大学 一种基于柔性衬底的自驱动ZnO基紫外探测器及其制备方法
CN105304729A (zh) * 2015-09-08 2016-02-03 安阳师范学院 基于石墨烯和II-VI族半导体轴向p-n结纳米线阵列的柔性光电子器件及其制备方法
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