CN109001265B - Efficient transistor detection method - Google Patents
Efficient transistor detection method Download PDFInfo
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- CN109001265B CN109001265B CN201810659472.6A CN201810659472A CN109001265B CN 109001265 B CN109001265 B CN 109001265B CN 201810659472 A CN201810659472 A CN 201810659472A CN 109001265 B CN109001265 B CN 109001265B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Abstract
The invention provides a high-efficiency transistor detection method, which comprises the following steps: s1, arranging a plurality of test stations for placing the transistors to be tested in the test container, and movably installing a sealing cover corresponding to each test station in the test container; s2, distributing a plurality of transistors to be detected to a plurality of test stations in a test container, adjusting each sealing cover to be in a second state, sealing the test container, and vacuumizing the interior of the test container to be in a preset first negative pressure state; and S3, filling alcohol gas into the test container until the pressure in the test container reaches a preset first pressure threshold value. And S6, selecting a test station as a current test position, driving the sealing cover on the current test position to adjust to a second state and keep for a first time value, and then detecting the current alcohol concentration in the test container and recording the current alcohol concentration as a second concentration value. The invention ensures the detection accuracy of the transistor under the condition of improving the detection efficiency in batch detection.
Description
Technical Field
The invention relates to the technical field of transistor detection, in particular to a high-efficiency transistor detection method.
Background
A Field Effect Transistor (FET) is simply referred to as a Field Effect Transistor. The majority carriers participate in the conduction, also known as unipolar transistors. It belongs to a voltage control type semiconductor device. The FET has three transistors, gate, drain and source, and features extremely high internal resistance of the gate, e.g., several hundred megaohms with silicon dioxide, and is a voltage controlled device. The field effect transistor can be applied to an amplifying circuit, an electronic switch, impedance transformation, a constant current source, a gas sensor, a bio-based wearable device (proton conduction FET) and the like.
For FETs used in gas sensors and bio-based wearable devices, performance characterization often requires the use of specific atmospheres such as hydrogen, humidity, VOCs standard gas, etc., while simultaneously requiring the ability to perform multiple sample tests simultaneously in order to determine device repeatability versus single factor performance of different devices. Therefore, field effect transistor seal testing is crucial for future development in the field of FET-based gas sensors and bio-based wearable devices.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a high-efficiency transistor detection method.
The invention provides a high-efficiency transistor detection method, which comprises the following steps:
s1, arranging a plurality of test stations for placing the transistors to be tested in the test container, and movably installing a sealing cover corresponding to each test station in the test container; the sealing cover is matched with the internal structure of the test container to form a sealing chamber for isolating the transistor on the test station in a first state; the inner side of the sealing cover is communicated with the outer side in a second state;
s2, distributing a plurality of transistors to be detected to a plurality of test stations in a test container, adjusting each sealing cover to be in a second state, sealing the test container, and vacuumizing the interior of the test container to be in a preset first negative pressure state;
s3, filling alcohol gas into the test container until the pressure in the test container reaches a preset first pressure threshold;
s4, simultaneously inputting and discharging air into and out of the test container at the same flow rate until the alcohol content in the test container reaches a preset first concentration value, and then stopping inputting and discharging the air;
s5, driving each sealing cover to be adjusted to a first state, and then vacuumizing the interior of the test container to a preset second negative pressure state;
s6, selecting a test station as a current test position, driving a sealing cover on the current test position to adjust to a second state and keep a first time value, and then detecting the current alcohol concentration in the test container and recording the current alcohol concentration as a second concentration value;
s7, judging whether the second concentration value is larger than the first concentration value; otherwise, returning to step S5;
s8, if yes, recording the current test bit, and then returning to the step S4.
Preferably, each test station is individually inspected.
Preferably, in step S7, when the second concentration value is less than or equal to the first concentration value, further determining whether all the testing stations are tested, if yes, ending the testing; otherwise, the process returns to step S5.
Preferably, in step S8, when the second concentration value is greater than the first concentration value; recording the current test position and further judging whether all the test stations are completely detected, if so, ending the detection; otherwise, the process returns to step S4.
Preferably, the pressure in the test vessel in the second negative pressure state is equal to the pressure in the test vessel in the first negative pressure state.
According to the high-efficiency transistor detection method, the steps S2 to S5 are combined, under the condition that the transistors to be detected on all the test stations are exposed in the whole environment inside the test container, all the transistors to be detected are subjected to unified pretreatment inside the test container, and the test operation efficiency is improved. Through step S6, only the transistors on the current test station are exposed in the test container through state switching of the sealing covers, and the transistors to be detected on the rest test stations are isolated, so that the transistors to be detected on the current test station are detected independently in the test container, and mutual interference caused by simultaneous detection of the transistors to be detected on a plurality of test stations is avoided.
The invention ensures the detection accuracy of the transistor under the condition of improving the detection efficiency in batch detection.
Drawings
Fig. 1 is a flowchart of a method for efficiently detecting a transistor according to the present invention.
Detailed Description
Referring to fig. 1, the method for detecting a transistor with high efficiency according to the present invention includes the following steps.
And S1, arranging a plurality of test stations for placing the transistors to be tested in the test container, and movably installing a sealing cover corresponding to each test station in the test container. The sealing cover is matched with the internal structure of the test container to form a sealing chamber for isolating the transistor on the test station in the first state. In the second state of the sealing cover, the inner side of the sealing cover is communicated with the outer side. Specifically, in this embodiment, through the setting of sealed cowling, when all sealed cowlings all are in the second state, wait to detect the transistor on all test stations and all expose in the inside overall environment of test container, be convenient for wait to detect all transistors and carry out unified preliminary treatment inside the test container to improve test operation efficiency. Meanwhile, the transistors to be detected on each test station can be isolated through the sealing cover in the first state, so that the transistors to be detected on the test stations can be independently operated in the test container by driving the single transistor to be switched to the second state, and mutual interference caused by simultaneous detection of the transistors to be detected on a plurality of test stations is avoided.
S2, distributing a plurality of transistors to be detected to a plurality of test stations in the test container, adjusting each sealing cover to be in a second state, sealing the test container, and vacuumizing the interior of the test container to be in a preset first negative pressure state. In the step, air in the leaked transistor can be exhausted by pumping negative pressure, namely, the negative pressure state also appears in the leaked transistor.
And S3, filling alcohol gas into the test container until the pressure in the test container reaches a preset first pressure threshold value. In this step, after the alcohol gas is filled into the test container, if there is a leaking transistor in the test container, the alcohol gas will be squeezed into the leaking transistor under the pressure.
And S4, simultaneously inputting and exhausting air into and out of the test container at the same flow rate so as to reduce the alcohol concentration in the test container under the condition of ensuring constant pressure in the test container, and stopping inputting and exhausting air until the alcohol content in the test container reaches a preset first concentration value. In the step, because the pressure in the test container is constant, the leaked alcohol gas in the transistor cannot be diffused outwards, and the alcohol concentration in the transistor is inconvenient when the alcohol concentration in the test container is reduced, so that the difference between the alcohol concentration in the leaked transistor and the alcohol concentration in the test container is realized, and the transistor leakage condition can be checked according to the alcohol concentration in the subsequent step.
And S5, driving each sealing cover to adjust to the first state, and then vacuumizing the interior of the test container to a preset second negative pressure state. In this step, because the sealed cowling switches to the first state and seals each test station alone, can avoid in the test container evacuation back, the alcohol gas in the transistor that leaks gives off.
In this embodiment, the pressure in the test container in the second negative pressure state is equal to the pressure in the test container in the first negative pressure state.
And S6, selecting a test station as a current test position, driving the sealing cover on the current test position to adjust to a second state and keep for a first time value, and then detecting the current alcohol concentration in the test container and recording the current alcohol concentration as a second concentration value. If the transistor to be detected on the current test station leaks, after the sealing cover on the current test station is opened, alcohol gas in the transistor is diffused into the test container under the action of pressure, and the alcohol concentration in the test container is increased. On the contrary, if the transistor on the current test station is qualified, the alcohol concentration in the test container is not changed.
And S7, judging whether the second concentration value is larger than the first concentration value. Otherwise, the process returns to step S5. Specifically, in this step, when the second concentration value is less than or equal to the first concentration value, it is further determined whether all the testing stations are completely tested, and if yes, the testing is ended. Otherwise, returning to step S5 to test the transistors to be tested on the remaining test stations one by one.
S8, if yes, recording the current test bit to screen the unqualified transistor, and then returning to the step S4. Specifically, in this step, when the second concentration value is greater than the first concentration value. Recording the current test position and further judging whether all the test stations are completely detected, if so, ending the detection. Otherwise, returning to step S4 to test the transistors to be tested on the remaining test stations one by one.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention are equivalent to or changed within the technical scope of the present invention.
Claims (5)
1. A method for efficiently detecting a transistor is characterized by comprising the following steps:
s1, arranging a plurality of test stations for placing the transistors to be tested in the test container, and movably installing a sealing cover corresponding to each test station in the test container; the sealing cover is matched with the internal structure of the test container to form a sealing chamber for isolating the transistor on the test station in a first state; the inner side of the sealing cover is communicated with the outer side in a second state;
s2, distributing a plurality of transistors to be detected to a plurality of test stations in a test container, adjusting each sealing cover to be in a second state, sealing the test container, and vacuumizing the interior of the test container to be in a preset first negative pressure state;
s3, filling alcohol gas into the test container until the pressure in the test container reaches a preset first pressure threshold;
s4, simultaneously inputting and discharging air into and out of the test container at the same flow rate until the alcohol content in the test container reaches a preset first concentration value, and then stopping inputting and discharging the air;
s5, driving each sealing cover to be adjusted to a first state, and then vacuumizing the interior of the test container to a preset second negative pressure state;
s6, selecting a test station as a current test position, driving a sealing cover on the current test position to adjust to a second state and keep a first time value, and then detecting the current alcohol concentration in the test container and recording the current alcohol concentration as a second concentration value;
s7, judging whether the second concentration value is larger than the first concentration value; otherwise, returning to step S5;
s8, if yes, recording the current test bit, and then returning to the step S4.
2. A transistor high efficiency test method as claimed in claim 1 wherein each test station is tested individually.
3. The method for detecting the high efficiency of the transistor according to claim 1, wherein in step S7, when the second concentration value is less than or equal to the first concentration value, it is further determined whether all the testing stations are tested, and if yes, the testing is ended; otherwise, the process returns to step S5.
4. The method for detecting the high efficiency of a transistor according to claim 3, wherein in step S8, when the second concentration value is larger than the first concentration value; recording the current test position and further judging whether all the test stations are completely detected, if so, ending the detection; otherwise, the process returns to step S4.
5. The transistor high efficiency detection method of any one of claims 1 to 4, wherein the pressure in the test chamber in the second negative pressure state is equal to the pressure in the test chamber in the first negative pressure state.
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| CN201810659472.6A CN109001265B (en) | 2018-06-25 | 2018-06-25 | Efficient transistor detection method |
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| CN201810659472.6A CN109001265B (en) | 2018-06-25 | 2018-06-25 | Efficient transistor detection method |
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| CN109001265A CN109001265A (en) | 2018-12-14 |
| CN109001265B true CN109001265B (en) | 2020-07-10 |
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| CN101776920B (en) * | 2009-12-04 | 2011-12-28 | 中国核电工程有限公司 | Time parameter determining method for liquid level control in container with regular change of pressure |
| CN103063381A (en) * | 2012-12-27 | 2013-04-24 | 太原航空仪表有限公司 | Method and device for vacuum cavity leakage detection for sensors with vacuum reference cavities |
| CN104776961A (en) * | 2014-01-15 | 2015-07-15 | 广州市和晋自动化控制技术有限公司 | Method for realizing stable reference background index of gas leakage detection system and gas leakage detection system |
| DE102014104873A1 (en) * | 2014-04-04 | 2015-10-08 | Krones Ag | Method and device for filling a container with a filling product |
| CN205748829U (en) * | 2016-06-20 | 2016-11-30 | 中国兵器工业第二一三研究所 | A kind of slip multichannel automatic measurement mechanism for helium mass spectrometer leak detector |
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