CN109001265A - A kind of transistor efficient detection method - Google Patents
A kind of transistor efficient detection method Download PDFInfo
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- CN109001265A CN109001265A CN201810659472.6A CN201810659472A CN109001265A CN 109001265 A CN109001265 A CN 109001265A CN 201810659472 A CN201810659472 A CN 201810659472A CN 109001265 A CN109001265 A CN 109001265A
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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Abstract
A kind of transistor efficient detection method proposed by the present invention, comprising the following steps: S1, multiple test stations for being used to place transistor to be detected are set inside test container, the movement of each test station is corresponded in test container and is equipped with a seal closure；S2, multiple transistors to be detected are distributed in multiple test stations in test container, each seal closure is adjusted to the second state, then sealing test container and is evacuated to preset first negative pressure state to test container inside；S3, alcohol gas is filled into test container, until the pressure in test container reaches preset first threshold pressure.S6, it selects a test station as current test position, drives the seal closure on current test position to be adjusted to the second state and continue to be worth at the first time, then detect current alcohol concentration in test container and be denoted as the second concentration value.The present invention guarantees the detection accuracy of transistor in the case where batch detection improves detection efficiency.
Description
Technical field
The present invention relates to transistor detection technique field more particularly to a kind of transistor efficient detection methods.
Background technique
Field effect transistor (Field Effect Transistor, FET) abbreviation field-effect tube.Joined by majority carrier
With conduction, also referred to as unipolar transistor.It belongs to voltage controlled semiconductor device.There are three transistor, grid, leakages by FET
Pole, source electrode, its feature are that the internal resistance of grid is high, can achieve several hundred megaohms for example, by using earth silicon material, belong to
Voltage-controlled device.Field-effect tube can be applied to amplifying circuit, electronic switch, and impedance converts, constant-current source, gas sensor,
Biology base wearable device (proton conducts FET) etc..
For the FET for gas sensor and biology base wearable device, when performance characterization, usually needs to use specific
Atmosphere hydrogen, humidity, VOCs Standard Gases etc., while requirement can carry out Multi-example test simultaneously to measure the weight of device
The single factor test performance comparison of renaturation and different components.Therefore, air-sensitive of the field effect transistor sealing test for future based on FET
The development in sensor and biology base wearable device field is most important.
Summary of the invention
Technical problems based on background technology, the invention proposes a kind of transistor efficient detection methods.
A kind of transistor efficient detection method proposed by the present invention, comprising the following steps:
S1, be arranged inside test container it is multiple for placing the test stations of transistor to be detected, it is right in test container
Answer the movement of each test station that one seal closure is installed；Test container internal structure is cooperated to be formed under seal closure first state
The sealed chamber of transistor on isolation test station；Under the second state of seal closure, inner and outer connection；
S2, multiple transistors to be detected are distributed in multiple test stations in test container, each seal closure adjusts
To the second state, then sealing test container and preset first negative pressure state is evacuated to test container inside；
S3, alcohol gas is filled into test container, until the pressure in test container reaches preset first pressure threshold
Value；
S4, air input and discharge are carried out to test container simultaneously with identical flow velocity, until the alcohol in test container
Content stops air input and discharge after reaching default first concentration value；
S5, each seal closure of driving are adjusted to first state, and preset second then will be evacuated to inside test container
Negative pressure state；
S6, it selects a test station as current test position, the seal closure on current test position is driven to be adjusted to second
State simultaneously continues to be worth at the first time, then detects current alcohol concentration in test container and is denoted as the second concentration value；
S7, judge whether the second concentration value is greater than the first concentration value；It is no, then return step S5；
It S8, is then to be recorded to current test position, then return step S4.
Preferably, each test station is detected one by one.
Preferably, in step S7, when the second concentration value be less than or equal to the first concentration value, then further judge each test work
All whether detection is completed for position, is then to terminate to detect；It is no, then return step S5.
Preferably, in step S8, when the second concentration value is greater than the first concentration value；Then record is carried out to current test position to go forward side by side
One step judges whether all each test station complete by detection, is then to terminate to detect；It is no, then return step S4.
Preferably, the pressure under the second negative pressure state in test container is equal under the first negative pressure state in test container
Pressure.
A kind of transistor efficient detection method proposed by the present invention, in conjunction with step S2 to S5, in all test stations
In the case that transistor to be detected is exposed in the integrated environment inside test container, to all to be checked inside test container
It surveys transistor and carries out unified pretreatment, improve test operation efficiency.By step S6, switched by seal closure state, so that
Transistor in only current test station is exposed in test container, is carried out to the transistor to be detected in remaining test station
Isolation, to individually be detected in test container to the transistor to be detected in current test station, avoids multiple tests
Transistor to be detected on station interferes with each other caused by detecting simultaneously.
The present invention guarantees the detection accuracy of transistor in the case where batch detection improves detection efficiency.
Detailed description of the invention
Fig. 1 is a kind of transistor efficient detection method flow chart proposed by the present invention.
Specific embodiment
Referring to Fig.1, a kind of transistor efficient detection method proposed by the present invention, includes the following steps.
S1, be arranged inside test container it is multiple for placing the test stations of transistor to be detected, it is right in test container
Answer the movement of each test station that one seal closure is installed.Test container internal structure is cooperated to be formed under seal closure first state
The sealed chamber of transistor on isolation test station.Under the second state of seal closure, inner and outer connection.Specifically, this reality
It applies in mode, it is to be checked in all test stations when all seal closures are under the second state by the setting of seal closure
It surveys transistor to be exposed in the integrated environment inside test container, be convenient for inside test container to all transistors to be detected
Unified pretreatment is carried out, to improve test operation efficiency.It, can be to each test work meanwhile by the seal closure under first state
Transistor to be detected on position is isolated, to can tested by driving single transistors switch to the second state
It is individually operated to the transistor to be detected progress in the test station in container, avoid the crystal to be detected in multiple test stations
It is interfered with each other caused by pipe while detection.
S2, multiple transistors to be detected are distributed in multiple test stations in test container, each seal closure adjusts
To the second state, then sealing test container and preset first negative pressure state is evacuated to test container inside.This step
In by take out negative pressure, the air of the transistor internal of leakage can be discharged, i.e., so that leak transistor internal also there is negative pressure
State.
S3, alcohol gas is filled into test container, until the pressure in test container reaches preset first pressure threshold
Value.In this step, after filling alcohol gas into test container, if there is the transistor of leakage in test container, pressing
Pretend the transistor that leakage can be also squeezed into lower alcohol gas.
S4, air input and discharge are carried out to test container simultaneously with identical flow velocity, to guarantee in test container
The alcohol concentration in test container is reduced in the case where invariablenes pressure of liquid, until the alcohol content in test container reaches default first
Stop air input and discharge after concentration value.In this step, due to the invariablenes pressure of liquid in test container, so, the crystal of leakage
Alcohol gas in pipe will not distribute outward, alcohol concentration while alcohol concentration reduces in test container, in transistor
Inconvenience, so that the alcohol concentration difference in the alcohol concentration and test container in the transistor of leakage is realized, so as to subsequent basis
Alcohol concentration checks transistor leakage situation.
S5, each seal closure of driving are adjusted to first state, and preset second then will be evacuated to inside test container
Negative pressure state.In this step, each test station is individually sealed since seal closure is switched to first state, can avoid surveying
After vacuumizing in examination container, the alcohol gas in the transistor of leakage is distributed.
In present embodiment, being equal under the first negative pressure state for pressure under the second negative pressure state in test container tests appearance
Pressure in device.
S6, it selects a test station as current test position, the seal closure on current test position is driven to be adjusted to second
State simultaneously continues to be worth at the first time, then detects current alcohol concentration in test container and is denoted as the second concentration value.If worked as
Transistor leakage to be detected in preceding test station, then after the seal closure in current test station is opened, transistor internal
Alcohol gas is dispersed into test container under pressure action, improves the alcohol concentration in test container., whereas if current survey
Transistor on trial work position is qualified, then the alcohol concentration in test container will not change.
S7, judge whether the second concentration value is greater than the first concentration value.It is no, then return step S5.Specifically, in this step,
When the second concentration value be less than or equal to the first concentration value, then further judge each test station whether all detection complete, be, then
Terminate detection.It is no, then return step S5, to be detected one by one to the transistor to be detected in remaining test station.
It S8, is then to be recorded to current test position, to screen underproof transistor, then return step S4.Tool
Body, in this step, when the second concentration value is greater than the first concentration value.Then current test position record and further judged each
All test station whether complete by detection, is then to terminate to detect.It is no, then return step S4, so as to in remaining test station
Transistor to be detected detected one by one.
The above, preferable specific embodiment only of the present invention, but protection scope of the present invention not office
Be limited to this, anyone skilled in the art in the technical scope disclosed by the present invention, technology according to the present invention
Scheme and its inventive concept are subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (5)
1. a kind of transistor efficient detection method, which comprises the following steps:
S1, multiple test stations for being used to place transistor to be detected are set inside test container, are corresponded in test container every
One test station movement is equipped with a seal closure；Test container internal structure is cooperated to form isolation under seal closure first state
The sealed chamber of transistor in test station；Under the second state of seal closure, inner and outer connection；
S2, multiple transistors to be detected are distributed in multiple test stations in test container, each seal closure is adjusted to
Then two-state sealing test container and is evacuated to preset first negative pressure state to test container inside；
S3, alcohol gas is filled into test container, until the pressure in test container reaches preset first threshold pressure；
S4, air input and discharge are carried out to test container simultaneously with identical flow velocity, until the alcohol content in test container
Stop air input and discharge after reaching default first concentration value；
S5, each seal closure of driving are adjusted to first state, and preset second negative pressure then will be evacuated to inside test container
State；
S6, it selects a test station as current test position, the seal closure on current test position is driven to be adjusted to the second state
And continues to be worth at the first time, then detect current alcohol concentration in test container and be denoted as the second concentration value；
S7, judge whether the second concentration value is greater than the first concentration value；It is no, then return step S5；
It S8, is then to be recorded to current test position, then return step S4.
2. transistor efficient detection method as described in claim 1, which is characterized in that detected one by one to each test station.
3. transistor efficient detection method as described in claim 1, which is characterized in that in step S7, when the second concentration value is small
In or equal to the first concentration value, then further judges whether all each test station complete by detection, be then to terminate to detect；It is no, then
Return step S5.
4. transistor efficient detection method as claimed in claim 3, which is characterized in that in step S8, when the second concentration value is big
In the first concentration value；Then current test position is recorded and further judges that whether all each test station complete by detection, is,
Then terminate to detect；It is no, then return step S4.
5. such as the described in any item transistor efficient detection methods of Claims 1-4, which is characterized in that under the second negative pressure state
The pressure of pressure in test container being equal under the first negative pressure state in test container.
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| CN201810659472.6A CN109001265B (en) | 2018-06-25 | 2018-06-25 | Efficient transistor detection method |
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| CN201810659472.6A CN109001265B (en) | 2018-06-25 | 2018-06-25 | Efficient transistor detection method |
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| CN109001265A true CN109001265A (en) | 2018-12-14 |
| CN109001265B CN109001265B (en) | 2020-07-10 |
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Citations (5)
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| CN101776920A (en) * | 2009-12-04 | 2010-07-14 | 中国核电工程有限公司 | Time parameter determining method for liquid level control in container with regular change of pressure |
| CN103063381A (en) * | 2012-12-27 | 2013-04-24 | 太原航空仪表有限公司 | Method and device for vacuum cavity leakage detection for sensors with vacuum reference cavities |
| CN104776961A (en) * | 2014-01-15 | 2015-07-15 | 广州市和晋自动化控制技术有限公司 | Method for realizing stable reference background index of gas leakage detection system and gas leakage detection system |
| CN104973550A (en) * | 2014-04-04 | 2015-10-14 | 克罗内斯股份公司 | Method and device for filling a container |
| CN205748829U (en) * | 2016-06-20 | 2016-11-30 | 中国兵器工业第二一三研究所 | A kind of slip multichannel automatic measurement mechanism for helium mass spectrometer leak detector |
-
2018
- 2018-06-25 CN CN201810659472.6A patent/CN109001265B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101776920A (en) * | 2009-12-04 | 2010-07-14 | 中国核电工程有限公司 | Time parameter determining method for liquid level control in container with regular change of pressure |
| CN101776920B (en) * | 2009-12-04 | 2011-12-28 | 中国核电工程有限公司 | Time parameter determining method for liquid level control in container with regular change of pressure |
| CN103063381A (en) * | 2012-12-27 | 2013-04-24 | 太原航空仪表有限公司 | Method and device for vacuum cavity leakage detection for sensors with vacuum reference cavities |
| CN104776961A (en) * | 2014-01-15 | 2015-07-15 | 广州市和晋自动化控制技术有限公司 | Method for realizing stable reference background index of gas leakage detection system and gas leakage detection system |
| CN104973550A (en) * | 2014-04-04 | 2015-10-14 | 克罗内斯股份公司 | Method and device for filling a container |
| CN205748829U (en) * | 2016-06-20 | 2016-11-30 | 中国兵器工业第二一三研究所 | A kind of slip multichannel automatic measurement mechanism for helium mass spectrometer leak detector |
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