CN109001141A - Infrared optical material impurity test method - Google Patents
Infrared optical material impurity test method Download PDFInfo
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- CN109001141A CN109001141A CN201811138357.0A CN201811138357A CN109001141A CN 109001141 A CN109001141 A CN 109001141A CN 201811138357 A CN201811138357 A CN 201811138357A CN 109001141 A CN109001141 A CN 109001141A
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- 239000000463 material Substances 0.000 title claims abstract description 137
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- 238000010998 test method Methods 0.000 title claims abstract description 17
- 238000012360 testing method Methods 0.000 claims abstract description 106
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- 238000011156 evaluation Methods 0.000 claims description 5
- 238000009738 saturating Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
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- 230000006872 improvement Effects 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
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Abstract
The present invention relates to infrared optical material impurity test methods, are related to optical material impurity the field of test technology.The present invention utilizes the field depth characteristic and scene imaging principle of infrared photography system, impurity situation present in the infra-red material opaque to visible light carries out all dirt situation inside the Polaroid acquisition infrared optical material of infrared photography system field depth, the equipment requirement that impurity inside this method infra-red material opaque to visible light is tested is simple, the precision one-dimensional of the precision surface plate that automatically moves of two dimension and carrying microcobjective that do not need carrying sample automatically moves platform, reduces the cost of test equipment；This test method is primary photograph true imaging, and the test result of the processing of non-overlapping imaging results, reflection is true；This test method once photo taking is just completed, and test is quick, the time is short.
Description
Technical field
The present invention relates to optical material impurity the field of test technology, and in particular to infrared optical material impurity test method.
Background technique
Impurity in optical material is the heterogeneities matter defects such as bubble, the calculus left after optical material manufactures, this
A little heterogeneity matter defects will severely impact the image quality of optical system.Impurity in test optical material is evaluation
Whether optical material is able to satisfy the necessary links used.For the optical material of visible waveband, the impurity in material is by unrestrained
Reflection source irradiation carries out human eye with magnifying glass and directly observes to record the quantity of impurity and size, then brings formula into and fall into a trap
The grade of optical material impurity defect is evaluated after calculation.
For the infrared optical material that cannot penetrate visible light (wavelength is 0.4 μm~0.78 μm), (wavelength is 0.8 μm~14
μm), such as infrared sulphur system optical glass, infrared crystal, infra-red china, the optical material of no image of Buddha visible waveband equally use eyes
It goes directly to observe the impurity in material, therefore, it is necessary to establish infrared test system to test.
A kind of layering of existing micro-imaging for testing infrared optical material uniformity scans test method.The master of this method
Want principle be infrared light supply is radiated be reflected by the partial mirror at 45 ° with light-source system optical axis it is in 90 ° micro- with its
Objective system, microcobjective throw into light radiation on tested optical material, and the optical material that microcobjective irradiates it carries out object
Point imaging, will be as on infrared detector.Impurity in entire infrared optical material is needed to being placed on precise 2-D mobile station
Test sample carry out the scanning that lateral whole plane scanning and longitudinal successively stepping line by line carry out another plane, until test sample
All demixing scans finish, and principle and method are as depicted in figs. 1 and 2.
The layering of infrared optical material uniformity micro-imaging scans test method, and there are Five problems: first is that this test
Method is limited due to using micro- principle, by microcobjective object distance is shorter, can only test the sample of very thin thickness, usually not more than
5mm is crossed, therefore, without practical value (the test maximum gauge of infrared optics part can reach 20mm)；Second is that test process and
The splicing relationship of test result is too complicated, first to carry out point by point scanning imaging test by mm-scale range in two-dimensional surface, so
Press the layer-by-layer stepping of nearly micron order again afterwards, entirely testing is a huge sweep test workload process, and two-dimensional scanning picture
Splicing and the splicing of longitudinal layer be also extremely complex, as shown in Figure 2 situation；Third is that test result is difficult to accurate reproduction reality
Border is as a result, there are microcobjective visual field different location image qualities because of the circle and circle tested and the micro-image spliced between layers
The factors such as the extensibility of the deformation of difference and depth field imaging can make the impurity image of horizontal and vertical splicing overlay region repeat to count
Number, it is difficult to repeating part strictly be distinguished, the deviation of impurities of materials image and actual conditions must be caused；Fourth is that test dress
Set complicated composition, required precision height and at high cost, T shape optical path, the two dimension of high precision test sample for needing more devices to form
It automatically moves platform and high-precision microcobjective longitudinal (one-dimensional) automatically moves platform；Fifth is that the testing time is long, due to answering for test
It is long that polygamy results in the test process time.
Summary of the invention
(1) technical problems to be solved
The technical problem to be solved by the present invention is how to design test philosophy and the side of a kind of infrared optical material impurity
Method, with solve optical material impurity reality can test problem, and reduce test device composition and test process complexity, obtain
Must meet impurities of materials actual conditions as a result, reduces testing cost, shortens the testing time.
(2) technical solution
In order to solve the above-mentioned technical problems, the present invention provides infrared optical material impurity test methods, including following step
It is rapid:
S1, an infrared optical material depth of field photograph impurity test macro is established, successively includes infrared unrestrained in optical path direction
Penetrate light-source system 1, tested infrared optical material sample 2, infrared photography object lens 3 and infrared detector 4；Wherein, it is tested infrared light
Material sample 2 is learned to be placed on sample mounting table 6；The infrared diffusion light-source system 1 is by infrared light supply and saturating infrared spectroscopy
Diffusing screen 101 forms, and the infrared light supply is full spectrum infrared light supply 102 either monochromatic infrared light supply 103；
S2, the maximum gauge that infrared optical material sample 2 is tested described in test macro is determined, using as infrared photography object
The object space depth of field design considerations of mirror 3；
S3, the minimum contaminant size for needing to count according to the tested infrared optical material sample 2, determine infrared photography object
The object space resolving power of mirror 3；
The transparent wave band of the predetermined tested infrared optical material sample 2 of S4, basis, selects the wave band of infrared detector to respond class
Type determines the type of infrared detector 4；
The maximum caliber of S5, the maximal side size for establishing the infrared detector 4 and tested infrared optical material sample 2
Full test range matching relationship；
S6, according to step S3 determine infrared photography object lens 3 object space resolving power, determine its image space resolving power interval σ；
S7, according to step S6 determine infrared photography object lens 3 image space resolving power interval σ, calculate infrared photography object lens 3 permit
Perhaps maximum F number；
Size d, the d≤σ of the detection member 601 of S8, the selection infrared detector 4, are able to satisfy infrared detector 4 to red
The resolution of the image space resolving power interval σ of outer photographic lens 3；
S9, the infrared photography object lens 3 obtained with step S7 F number determine the diffraction spot of 3 picture point of infrared photography object lens, i.e. picture
The size of point disc of confusion 602；
S10, the alternative serial focal length value of the setting infrared photography object lens 3；
S11, the serial focal length value being arranged according to amplification factor, the step S10 of the S5 infrared photography object lens 3 calculated, calculate
The series matter of infrared photography object lens 3 away from；Further according to step S7 determine permission F number, step S10 setting serial focal length value,
The corresponding series matter of serial focal length calculates the serial focal length and object of infrared photography object lens 3 away from, the defocus disperse circular diameter δ that allows
Away from the depth of field after corresponding serial object space prospect depth and object space；Then the volume size allowed according to test macro, according to infrared photograph
The infrared optical material impurity of the thickness of sample range of 3 pairs of phase objective expectation tests can be imaged onto the requirement on infrared detector 4,
Selection calculate reach preset requirement serial focal length value f ' the object space depth of field Δ L of infrared photography object lens 3, the object distance L of imaging and
Image distance L ', the object space depth of field Δ L are the sum of the depth of field and the depth of field after object space before object space；
Step S12, test macro is arranged according to following principle: not allowing among the thickness of tested infrared optical material sample 2
Face 801 is overlapped with object plane 802, and forms the thickness median surface 801 of tested infrared optical material sample 2 in 802 left side of object plane
The depth of field 805 effectively occupies thickness of sample after the depth of field 804 and object space before object space, and the object plane 802 is depth of field interface namely infrared
The picture corresponding object plane of sensitized lithography 803 of detector 4；
Step S13, the impurity image in tested infrared optical material sample 2 received to infrared detector 4, at image
Reason and software for calculation carry out dimensional measurement, quantity counts, and provide the test result of impurity specification evaluation.
Preferably, in step S1, if the infrared light supply is monochromatic infrared light supply 103, and it is laser infrared source, then exists
Laser beam expanding optical system 104, and laser infrared are additionally provided between laser infrared source and the diffuse reflecting screen of saturating infrared spectroscopy
The wavelength of light source penetrates in wave band infrared optical material, also in the rdaiation response service band of infrared detector 4.
Preferably, in step S2, the sample of 100mm diameter is arrived greatly for testing beam diameter, with near-infrared or short-wave infrared light
Source test determines that the maximum gauge of tested infrared optical material sample 2 is no more than 25mm, with medium wave and LONG WAVE INFRARED test of light source
Maximum gauge can be thicker, can reach 2 times of short-wave infrared or more.
Preferably, in step S3, for work short infrared wave band infrared optical material, with short-wave infrared light source into
The impurity of row infrared optical material is tested, and the minimum dimension for the infrared optical material impurity for needing to differentiate is 0.1mm；For work
It needs to differentiate when being tested with the radiation source of corresponding wave band in medium-wave infrared wave band or the infrared optical material of long wave infrared region
The minimum dimension of infrared optical material impurity increase with the lengthening of wavelength.
Preferably, in step S4, if not considering to test germanium crystal infrared optical material, near-infrared or short-wave infrared are selected
Detector selects medium-wave infrared detector or Long Wave Infrared Probe if considering the impurity of all kinds of infrared optical materials of test.
Preferably, in step S5, the matching relationship passes through the full test size with tested infrared optical material sample 2
502 obtain divided by the maximum effective dimensions 501 of infrared detector 4 as the amplification factor β of infrared photography object lens 3.
Preferably, in step S6, image space resolving power interval σ is the object space resolving power of infrared photography object lens 3 divided by infrared photograph
The amplification factor β of phase objective 3.
Preferably, if test wavelength is λ, F=σ/(1.22 λ).
Preferably, in step S8, the image space resolving power interval σ of the infrared photography object lens 3 is the spacing of two adjacent picture elements.
Preferably, in step S9, if the F number of infrared photography object lens 3 subtracts half and influences the desired scape of infrared photography object lens 3
Deep length, it is determined that the diffraction spot diameter of 3 picture point of infrared photography object lens is 2 σ, and the diffraction spot diameter 603 of picture point is two detections
Elemental size, i.e. 2d；If the F number of infrared photography object lens 3, which subtracts half not, influences the desired depth of field length of infrared photography object lens 3,
Determine that the size of the diffraction spot diameter 603 of the picture point of infrared photography object lens 3 is equal to the size of the detection member 601 of infrared detector 4.
(3) beneficial effect
The present invention utilizes the field depth characteristic and scene imaging principle of infrared photography system, the infrared material opaque to visible light
Impurity situation present in material carries out inside the Polaroid acquisition infrared optical material of infrared photography system field depth all
Impurity situation, the equipment requirement that the impurity inside this method infra-red material opaque to visible light is tested is simple, is not required to
The precision one-dimensional for carrying precision surface plate and carrying microcobjective that the two dimension of sample automatically moves automatically moves platform, reduces
The cost of test equipment；This test method is primary photograph true imaging, the processing of non-overlapping imaging results, the test knot of reflection
It is truly real；This test method once photo taking is just completed, and test is quick, the time is short.
Detailed description of the invention
Fig. 1 is micro- sweep test method schematic diagram in the prior art；
Fig. 2 is the test section Overlap-scanning figure of micro- sweep test method in the prior art；
Fig. 3 is mid-infrared light material depth of field photograph impurity test principle figure of the present invention；
Fig. 4 is infrared diffusion light-source system composition figure in the present invention；
Fig. 5 is the matching relationship schematic diagram of mid-infrared light material test sample of the present invention Yu infrared detector size；
Fig. 6 is the matching relationship schematic diagram of infrared acquisition member and image confusion spot in the present invention；
Fig. 7 is the relation schematic diagram of mid-infrared light impurities of materials imaging of the present invention on the detector；
Fig. 8 be in the present invention object space depth of field to the matching relationship schematic diagram of thickness of sample.
Specific embodiment
To keep the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to tool of the invention
Body embodiment is described in further detail.
It was found by the inventors of the present invention that the depth of field using infrared photography system can carry out the impurity in infrared optical material
Polaroid, can obtain impurity in comprehensive optical material actually possesses situation, and the impurity of infrared optical material is made to test letter
Listization and actualization.The it is proposed of this invention is based on two basic points, first is that the characteristics of to optical system imaging and property relationship
There is deep understanding (property relationship of optical system is mainly the relationship between resolving power, the depth of field, F number etc.), second is that infrared
The practical situations of optical material, the tolerance level of impurity, impurity calculation method have deep understanding.First basic point
It is the infrared photography optical system for solving to design test infrared optical material impurity, second basic point is to solve rationally to set
The depth of field length of the photographic system of meter can cover thickness requirement (most of infrared optics zero of most infrared optics parts
The thickness of part is no more than 20mm, and the present invention is 2.5 or so for amplification factor β=10 of infrared photography object lens 3, Refractive Index of Material
When near-infrared and the depth of field of short-wave infrared can be designed into 25mm, the depth of field of medium-wave infrared can be designed into 2 times of shortwave or more,
The depth of field of LONG WAVE INFRARED can be designed longer；As the amplification factor β and increase Refractive Index of Material for reducing infrared photography object lens 3,
It can design by the variation increased longer depth of field of proportionate relationship；Corresponding sample when the amplification factor β=10 of infrared photography object lens 3
Test full-size is 100mm；The variation relation of the amplification factor β of infrared photography object lens 3 and its depth of field Δ L is on the contrary, times magnification
When number increases, the depth of field reduces, and vice versa), the object space resolving power of the photographic system of rational design is able to satisfy to infrared optics material
The resolution and imaging for the impurity minimum dimension that material needs to count.Although can not have using thickness of the tomography method to test sample
Restricted (but more serious with micro- scanning limitation, because microlens object distance is short), but in addition to special circumstances, the sample of actual test
Thickness generally all will not or be not necessarily to (be tested with near-infrared or short-wave infrared more than 25mm, it is red to be almost able to satisfy the overwhelming majority
The test of outer optical element thickness needs).Infrared optics part does not have to the reason of very thick material mainly infrared optics material generally
Expect loss of weight that is expensive, and considering optical system, therefore, the reflection function in infrared optical system is usually used instead
Mirror is penetrated, and does not have to thick and heavy, expensive prism.The case where testing special thick infrared optical material impurity with micro- demixing scan is infrared
Few actual demands in optical test.
Based on the deep grasp above to infrared optical system and optical material impurity actual conditions, the present invention is using infrared
The Polaroid test philosophy of the photographic system depth of field creates the test method of infrared optical material impurity, the test method include with
Lower step:
Step S1, establish one by infrared diffusion light-source system 1, tested infrared optical material sample 2, sample mounting table 6,
The compositions such as infrared photography object lens 3 (depth field imaging system), infrared detector 4, infrared image acquisition, processing, display system 5 it is red
Outer optical material depth of field photograph impurity test macro, as shown in Figure 3.
Wherein, as shown in figure 4, the infrared diffusion light-source system 1 by infrared light supply and saturating infrared spectroscopy diffusing screen 101
Composition is monochrome infrared diffusion light-source system shown in wide range infrared diffusion light-source system shown in Fig. 4 a or Fig. 4 b.It is described red
Outer light source can emit the light radiation of 0.78 μm~14 μ m wavelength ranges either full spectrum infrared light supply 102 in Fig. 4 a；?
It can be the monochromatic infrared light supply 103 in Fig. 4 b, such as laser infrared source, when using laser infrared source, should also use laser
Beam expander optical system 104.When using monochromatic infrared light supply 103, the wavelength of monochromatic infrared light supply should be in the saturating of infrared optical material
It crosses in wave band, it should also be in the rdaiation response service band of infrared detector 4.The diffused light that infrared diffusion light-source system 1 issues
As far as possible uniformly it should avoid interference of the light source unevenly to test imaging.
Step S2, it determines in the infrared optical material depth of field photograph impurity test macro and is tested infrared optical material sample
2 maximum gauge, this parameter is by the object space depth of field design considerations as infrared photography object lens 3.According to infrared optics part
Design conditions, thickness are generally less than 20mm, therefore, arrive the sample of 100mm diameter greatly for testing beam diameter, with near-infrared or short
The test of wave infrared light supply determines that the maximum gauge of tested infrared optical material sample 2 is no more than 25mm and (when necessary, passes through reduction
The testing beam diameter of tested infrared optical material sample 2 is increased the F number of infrared photography object lens 3 in the ratio that bore reduces, can increased
The depth of field of infrared photography object lens 3), determine that the maximum of tested infrared optical material sample (2) is thick in medium wave and long wave infrared region
Degree reaches the 2 times or more of shortwave.
Step S3, the minimum contaminant size for needing to count according to infrared optical material sample 2 is tested, determines infrared photography object
The object space resolving power of mirror 3.For the infrared optical material to work in short infrared wave band (1 μm~3 μm), with short-wave infrared light source
The impurity test of infrared optical material is carried out, the minimum dimension for the infrared optical material impurity for needing to differentiate is 0.1mm.For work
Make in medium-wave infrared wave band (3 μm~5 μm) or the infrared optical material of (8 μm~14 μm) of long wave infrared region, with corresponding wave
When the radiation source test of section, the minimum dimension for the infrared optical material impurity for needing to differentiate will increase with the lengthening of wavelength.It removes
Germanium crystal material is opaque outer in infrared short-wave band, and almost all of infrared optical material is from infrared shortwave to infrared long wave
Wave band be all it is transparent, therefore, select medium-wave band that can test all infrared optical materials, select short-wave band test that can survey
Try most infrared optical materials.
Step S4, according to the transparent wave band of predetermined tested infrared optical material sample 2, the wave band of infrared detector is selected to ring
Type is answered, that is, determines the type of infrared detector 4.If not considering to test germanium crystal infrared optical material, near-infrared may be selected
Or short-wave infrared detector, benefit are that the face battle array pixel quantity of detector is big, image space resolving power is high, and cheap (detection
Wave band covers 0.78 μm~1 μm).Such as to consider to test the impurity of all kinds of infrared optical materials, medium-wave infrared detector may be selected
Or Long Wave Infrared Probe.
Step S5, it establishes the maximal side size (for the maximum effective dimensions 501 in Fig. 5) of infrared detector 4 and is tested
The matching of the full test range of the maximum caliber (for the full test size 502 in Fig. 5) of infrared optical material sample 2 is closed
System.As shown in figure 5, i.e. with the full test size 502 of tested infrared optical material sample 2 divided by the maximum of infrared detector 4
Amplification factor β of the effective dimensions 501 as infrared photography object lens 3.The image space that this matching relationship is used to calculate test is differentiated
Power, when the resolving power that test macro can be made to meet the requirements the small-bore size measuring of infrared optical material sample 2, to infrared optics
The maximum allowable size measuring of material sample 2 also can equally meet the resolving power requirement of test.
Step S6, according to the object space resolving power of the S3 infrared photography object lens 3 determined, its image space resolving power interval σ is determined.Picture
Square resolving power interval σ is the object space resolving power of infrared photography object lens 3 divided by the amplification factor β of infrared photography object lens 3.
Step S7, according to the image space resolving power interval σ of the step S6 infrared photography object lens 3 determined, infrared photography object is calculated
The maximum F number that mirror 3 allows.If test wavelength is λ, F=σ/(1.22 λ), this F number has infrared photography object lens 3 to tested
The resolving power of the minimum contaminant size of test is needed in infrared optical material sample 2.
Step S8, size (side length) d, the d≤σ for selecting the detection member 601 of infrared detector 4, keeps infrared detector 4 full
Resolution of the foot to the image space resolving power interval σ (minimum resolved intervals) of infrared photography object lens 3, as shown in Figure 6.Infrared detector 4
Least resolution be two adjacent picture elements spacing, the spacing of two adjacent picture elements of the big infrared detector 4 of duty ratio can be approximate
Equal to the side length of detection member.
Step S9, the F number of the infrared photography object lens 3 obtained with step S7 determines the diffraction spot of 3 picture point of infrared photography object lens
(i.e. diffusion of point image spot 602) size.Method are as follows: so that the diffraction spot diameter of 3 picture point of infrared photography object lens is 2 σ, the diffraction of picture point
Spot (i.e. diffusion of point image spot) diameter 603 is two detections elemental sizes, i.e. 2d, the matching of diffraction spot diameter 603 and four detection members
Relationship as shown in fig. 6, but preferred scheme be: if the F number of infrared photography object lens 3, which subtracts half not, influences infrared photography object lens
3 desired depth of field length, then make the size of the diffraction spot diameter 603 of the picture point of infrared photography object lens 3 equal or slightly larger than infrared
The size of the detection member 601 of detector 4 meets detection member 601 to guarantee to have enough radiation energies to act on detection member 601
There is good response signal to object point picture.
Step S10, the alternative serial focal length value of setting infrared photography object lens 3 (such as focal length be 10mm, 20mm,
30mm ..., 80mm etc.), to design a variety of optical system overall size schemes and optical system bore scheme (according to step S7
The F number and focal length that determining infrared photography object lens 3 allow calculate), when to weigh test macro overall size and detector light exposure
Select to use.
Step S11, the serial focal length value being arranged according to the amplification factor of the S5 infrared photography object lens 3 calculated, step S10,
Calculate infrared photography object lens 3 series matter away from；According to the F number of the step S7 permission determined, the serial focal length of step S10 setting
Value, the corresponding series matter of serial focal length away from, the defocus disperse circular diameter δ that allows, calculate infrared photography object lens 3 serial focal length and
The depth of field after the corresponding serial object space prospect depth of object distance and object space；According to the volume size that test equipment allows, according to infrared photography
The infrared optical material impurity of the thickness of sample range of 3 pairs of object lens expectation tests can be imaged onto the requirement on infrared detector 4, weigh
Object space depth of field Δ L (depth of field and the object space before object space of the above infrared photography object lens 3 for calculating satisfied serial focal length value f ' of weighing apparatus selection
The sum of depth of field afterwards), the object distance L of imaging and the optical imageries parameter such as image distance L ', as shown in fig. 7, Xi、Xi+1Be respectively be tested it is infrared
I-th, i+1 impurity in optical material sample 2, Xi’、Xi+1' it is i-th, i in tested infrared optical material sample 2 respectively
The picture of+1 impurity.
Step S12, in order to guarantee the effective use of infrared optical system depth of field length, optical material impurity shown in Fig. 3
In the arrangement of test macro, not allowing the thickness median surface 801 of tested infrared optical material sample 2 with object plane 802, (depth of field is demarcated
The picture corresponding object plane of sensitized lithography 803 of face namely infrared detector 4) it is overlapped, and make tested infrared optical material sample 2
Thickness median surface 801 near 802 left-hand of object plane, i.e., object plane 802 is in the thickness close to tested infrared optical material sample 2
Between face 801 the right, forming the depth of field 805 after object space prospect deep 804 and object space, effectively to occupy thickness of sample (thick to the maximum of permission
Spend sample), as shown in Figure 8.This position corresponding relationship is arranged by being tested the tracks positioned that infrared optical material sample 2 is arranged
Or track scale is demarcated.
Step S13, the impurity image in tested infrared optical material sample 2 received to infrared detector 4, input picture
Acquisition, processing and display system 5 carry out the measurement of sample contaminant size size, number by Image Acquisition, processing and display system 5
Meter number calculates, the test result of output impurity specification evaluation.
Method of the invention can be not only used for each infrared band opaque to visible light (near-infrared, short-wave infrared, in
Wave is infrared, LONG WAVE INFRARED) optical material impurity test, it can also be used to the test of other radiation transparent material impurity only needs
By the source of infrared radiation, infrared optical imaging system and infrared detector be changed to the radiation source of corresponding wave band, imaging system and
Detector, such as visible light wave range, ultraviolet band, terahertz wave band.Although in visible light wave range, the impurity of optical material
(or inspection) can be directly tested with human eye, still, the survey of visible light optical impurities of materials is carried out using method of the invention
When examination, its test (or inspection) automation can be made, do not need to greatly improve visible light light using (or inspection) is manually tested
Learn the operating efficiency of impurities of materials test (or inspection) and the computational efficiency of defects assessment, moreover it is possible to greatly improve visible light optical material
Expect that the objectivity of impurity test (or inspection), this three advantages are that human eye test (or inspection) institute is inaccessiable, it is seen that light light
The operating efficiency problem, evaluation computational efficiency and Problem of Objectivity for learning impurities of materials test (or inspection) are exactly visible light optical material
Expect the main problem of impurity test (or inspection).
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (10)
1. infrared optical material impurity test method, which comprises the following steps:
S1, an infrared optical material depth of field photograph impurity test macro is established, successively includes infrared diffusion light in optical path direction
Source system (1), tested infrared optical material sample (2), infrared photography object lens (3) and infrared detector (4)；Wherein, it is tested red
Outer optical material sample (2) is placed on sample mounting table (6)；The infrared diffusion light-source system (1) is by infrared light supply and thoroughly
The diffusing screen (101) of infrared spectroscopy forms, and the infrared light supply is full spectrum infrared light supply (102) either monochromatic infrared light supply
(103)；
S2, the maximum gauge that infrared optical material sample (2) are tested described in test macro is determined, using as infrared photography object lens
(3) object space depth of field design considerations；
S3, the minimum contaminant size for needing to count according to the tested infrared optical material sample (2), determine infrared photography object lens
(3) object space resolving power；
The transparent wave band of S4, basis predetermined tested infrared optical material sample (2), selects the wave band of infrared detector to respond class
Type determines the type of infrared detector (4)；
The maximum caliber of S5, the maximal side size for establishing the infrared detector (4) and tested infrared optical material sample (2)
Full test range matching relationship；
S6, according to step S3 determine infrared photography object lens (3) object space resolving power, determine its image space resolving power interval σ；
S7, according to step S6 determine infrared photography object lens (3) image space resolving power interval σ, calculate infrared photography object lens (3) permit
Perhaps maximum F number；
S8, the selection infrared detector (4) detection first (601) size d, d≤σ, be able to satisfy infrared detector (4) pair
The resolution of the image space resolving power interval σ of infrared photography object lens (3)；
S9, the infrared photography object lens (3) obtained with step S7 F number determine the diffraction spot of infrared photography object lens (3) picture point, i.e. picture
The size of point disc of confusion (602)；
The alternative serial focal length value of S10, the setting infrared photography object lens (3)；
S11, the serial focal length value being arranged according to amplification factor, the step S10 of the S5 infrared photography object lens (3) calculated, calculate red
The series matter of outer photographic lens (3) away from；Further according to step S7 determine permission F number, step S10 setting serial focal length value,
The corresponding series matter of serial focal length away from, the defocus disperse circular diameter δ that allows, calculate infrared photography object lens (3) serial focal length and
The depth of field after the corresponding serial object space prospect depth of object distance and object space；Then the volume size allowed according to test macro, according to infrared
Photographic lens (3) can be imaged on infrared detector (4) the infrared optical material impurity of the thickness of sample range of expectation test
Requirement, selection calculate reaches preset requirement serial focal length value f ' infrared photography object lens (3) object space depth of field Δ L, imaging
Object distance L and image distance L ', the object space depth of field Δ L is the sum of depth of field after the depth of field and object space before object space；
Step S12, test macro is arranged according to following principle: not allowing the thickness median surface of tested infrared optical material sample (2)
(801) it is overlapped with object plane (802), and makes the thickness median surface (801) of tested infrared optical material sample (2) in object plane (802)
Left side, the depth of field (805) effectively occupies thickness of sample after forming object space prospect deep (804) and object space, and the object plane (802) is the depth of field
The corresponding object plane of picture sensitized lithography (803) of interface namely infrared detector (4)；
Step S13, the impurity image in tested infrared optical material sample (2) received to infrared detector (4), to described miscellaneous
Matter image carries out dimensional measurement, quantity counts, and provides the test result of impurity specification evaluation.
2. the method as described in claim 1, which is characterized in that in step S1, if the infrared light supply is monochromatic infrared light supply
(103), and it is laser infrared source, then is additionally provided with laser between laser infrared source and the diffuse reflecting screen of saturating infrared spectroscopy
Beam expander optical system (104), and the wavelength of laser infrared source penetrating in wave band in infrared optical material, also in infrared acquisition
In the rdaiation response service band of device (4).
3. the method as described in claim 1, which is characterized in that in step S2, arrive the sample of 100mm diameter greatly for testing beam diameter
Product, with near-infrared or short-wave infrared test of light source, determine the maximum gauge of tested infrared optical material sample (2) in near-infrared or
Short infrared wave band is no more than 25mm, determines the maximum of tested infrared optical material sample (2) in medium wave and long wave infrared region
Thickness reaches the 2 times or more of shortwave.
4. the method as described in claim 1, which is characterized in that in step S3, for working in the infrared of short infrared wave band
Optical material is tested, the infrared optical material impurity for needing to differentiate with the impurity that short-wave infrared light source carries out infrared optical material
Minimum dimension be 0.1mm；For working in medium-wave infrared wave band or the infrared optical material of long wave infrared region, with corresponding wave
When the radiation source test of section, the minimum dimension for the infrared optical material impurity for needing to differentiate increases with the lengthening of wavelength.
5. the method as described in claim 1, which is characterized in that in step S4, if not considering to test germanium crystal infrared optics material
Material, then select near-infrared or short-wave infrared detector, if considering the impurity of all kinds of infrared optical materials of test, selects medium wave red
External detector or Long Wave Infrared Probe.
6. the method as described in claim 1, which is characterized in that in step S5, the matching relationship passes through with tested infrared light
The full test size (502) of material sample (2) is divided by the maximum effective dimensions (501) of infrared detector (4) as infrared
The amplification factor β of photographic lens (3) is obtained.
7. method as claimed in claim 6, which is characterized in that in step S6, image space resolving power interval σ is infrared photography object lens
(3) object space resolving power divided by infrared photography object lens (3) amplification factor β.
8. the method for claim 7, which is characterized in that set test wavelength as λ, F=σ/(1.22 λ).
9. method according to claim 8, which is characterized in that in step S8, the image space of the infrared photography object lens (3) is differentiated
Power interval σ is the spacing of two adjacent picture elements.
10. method as claimed in claim 9, which is characterized in that in step S9, if the F number of infrared photography object lens (3) subtracts one
Half influences infrared photography object lens (3) desired depth of field length, it is determined that the diffraction spot diameter of infrared photography object lens (3) picture point is 2
σ, the diffraction spot diameter (603) of picture point are two detections elemental sizes, i.e. 2d；If the F number of infrared photography object lens (3) subtracts half not
Influence infrared photography object lens (3) desired depth of field length, it is determined that the diffraction spot diameter of the picture point of infrared photography object lens (3)
(603) size is equal to the size of the detection first (601) of infrared detector (4).
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