CN109000792A - A kind of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy - Google Patents
A kind of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy Download PDFInfo
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- CN109000792A CN109000792A CN201810812775.7A CN201810812775A CN109000792A CN 109000792 A CN109000792 A CN 109000792A CN 201810812775 A CN201810812775 A CN 201810812775A CN 109000792 A CN109000792 A CN 109000792A
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- 239000000463 material Substances 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims abstract description 20
- 230000007704 transition Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910010037 TiAlN Inorganic materials 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims abstract description 16
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000010748 Photoabsorption Effects 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 12
- 230000004044 response Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002887 superconductor Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
The invention discloses a kind of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy, core is the superconducting resonator for collecting general construction, including for inhibiting in substrate the interdigital capacitor of two level impurities noises and as the inductance item of photo-absorption region；Inductance item is embedded on interdigital capacitor, and in parallel with interdigital capacitor；The material of inductance item is TiAlN thin film, and superconducting transition temperature 0.9K, with a thickness of 20nm, area is 10 μm of 10 μ m；The material of interdigital capacitor is Al film, and superconducting transition temperature 1.2K, with a thickness of 200nm, line width is 5 μm, and area is 0.6mm × 0.6mm；Si substrate below inductance item is in suspended state, Si substrate with a thickness of 10 μm；The anti-reflection film of a layer specific thickness is uniformly plated in the upper surface of TiAlN thin film, uniformly plates one layer of metal Anti-reflective coating thereunder.
Description
Technical field
The invention belongs to the technical fields of superconducting single-photon detector, and in particular to a kind of photon number and energy are distinguishable
Superconductive microwave dynamic inductance detector.
Background technique
Light quantum information technology rapidly develops in recent years, and the underlying carrier of information is the single photon for being not easily susceptible to interference,
In order to accurately read the single-photon detector that photon information just needs work in communication band (near infrared band).Most types
Single-photon detector can generate identical response to a photon or multi-photon, can only distinguish no photon and have two kinds of shapes of photon
State is unable to resolved light subnumber (photon-number resolving, abbreviation PNR) and resolving photon energy, this allows for PNR
Detector can apply deeper into light quantum information processing and spectrum accurate measurement in.
The single-photon detector of current commercialization is mainly based upon semiconductor system, such as photomultiplier tube and work
Avalanche photodide (APD) under Geiger mode angular position digitizer.However it is limited by material band gap width, semiconductor single-photon detector
Usually only there is response to the light of a certain wave band.For example the APD of silicon base is good in the performance of 400nm~900nm wave band, but to wavelength
It is not responded in 1 μm or more of light, and this is precisely the section where modern communications wavelength (1.31 μm and 1.55 μm).Superconduction material
The energy gap of material has sensitive response in meV magnitude, therefore to the photon of near infrared band.And superconductor detector works in low temperature,
With extremely low dark count rate, these advantages make superconducting single-photon detector become work in the PNR detector of communication band
One of best solution.
There are mainly two types of superconductor detectors that is currently being widely studied and having communication band number of photons resolution performance: super
It leads nanowire single photon detector (SNSPD) and is based on the single-photon detector of heat-sensitive superconducting boundary transition sensing technology (TES).
SNSPD is that the hot spot region formed after being incident on nano wire using photon loses superconductivity to realize photon detection, although
It can make the indirect resolved light subnumber of SNSPD by space or time-domain multiplexed, but single SNSPD itself does not have the energy of PNR
Power, and can not resolving photon energy.TES is then to utilize the great superconducting thin film of suiperconducting transition curve (resistance v. temperature) slope
Photon detection is realized, because the resistance variations of TES are proportional to the number or energy of incident photon, TES in linear zone
Itself just there is number of photons and energy resolution, but TES needs the SQUID technique on chip, micro-processing technology is required very
Height can greatly increase the complexity on measurement route if expanding to detector array.
In order to solve the problem of single SNSPD can not resolving photon number and energy and TES can not large-scale integrated,
It is proposed that with another superconductor detector for having PNR and photon energy resolution ability is realized: microwave dynamic inductance is visited
It surveys device (Microwave Kinetic Inductance Detector, abbreviation MKID), this is maximally related with the application patent
Technology is specifically please referred to and has been published thesis: Counting near infrared photons with microwave
The working principle of kinetic inductance detectors, Appl.Phys.Lett.110,212601 (2017) .MKID is
Photon detection is realized to the sensitive response of radiation energy using the dynamic inductance of superconductor.When photon is absorbed by photonic absorption area
Afterwards, cooper electronics reduces the dynamic inductance for changing resonator to density, and the raising of quasi particle density then makes resonator surface resistance
Increase, eventually results in the reduction of resonance frequency and quality factor.Therefore the microwave excitation signal near input resonance frequency
Afterwards, we can observe response impulse corresponding with light pulse, and the amplitude of response impulse and the photon number of absorption (or energy
Amount) it is directly proportional, to realize the resolution of photon number and energy.
But photon absorption region is the superconducting thin film of single layer in the technology, even if photon has been fully focussed on absorption region,
Also it can inevitably be reflected or transmit to reduce photon absorption efficiency, and then limit the system detection effect of detector
Rate；Furthermore photonic absorption area using superconducting transition temperature ≈ 1.4K TiAlN thin film, greater than the material (Al) of interdigital capacitor
Superconducting transition temperature (≈ 1.2K), the quasi particle that such photon generates in TiN material after being absorbed are easy to spread into Al, band
Carry out non-uniform response, limits energy resolution.
Summary of the invention
It is an object of the invention to be directed to above-mentioned deficiency in the prior art, a kind of distinguishable communication band of high efficiency is provided
The superconductive microwave dynamic inductance detector of photon number and energy, to solve the problems, such as that existing MKID technology detection efficient is low, and
The photon energy resolution ability of device can further be promoted.
In order to achieve the above objectives, the technical solution adopted by the present invention is that:
A kind of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy, it is characterised in that: including lump
The superconducting resonator of structure；Resonator includes for inhibiting in substrate the interdigital capacitor of two level impurities noises and as light absorption
The inductance item in region；Inductance item is embedded on interdigital capacitor, and in parallel with interdigital capacitor；
Inductance item includes at least one layer of TiAlN thin film, and the superconducting transition temperature of TiAlN thin film is 0.9K, with a thickness of 20nm, area
It is 10 μm of 10 μ m；The material of interdigital capacitor is Al film, and superconducting transition temperature 1.2K, with a thickness of 200nm, line width is 5 μ
M, area are 0.6mm × 0.6mm；Si substrate below inductance item is in suspended state, Si substrate with a thickness of 10 μm；?
The uniformly distributed one layer of anti-reflection film in the upper surface of TiAlN thin film, thereunder uniformly distributed one layer of Anti-reflective coating.
Preferably, the material of inductance item is TiN or TiN/Ti/TiN film, and area is 10 μm of 10 μ m, with a thickness of 20nm,
Superconducting transition temperature is 0.9K.
Preferably, the area of interdigital capacitor is 0.6mm × 0.6mm, and line width is 5 μm, and material is Al or Nb, suiperconducting transition
Temperature is greater than 1K.
Preferably, the material of anti-reflection film is α-Si, SiNxOr SiO2；The material of the Anti-reflective coating is Ag, Au or Al.
Preferably, the Si substrate below inductance item is suspension structure, with a thickness of 10 μm.
The distinguishable superconductive microwave dynamic inductance detector of photon number and energy provided by the invention has beneficial below
Effect:
The MKID technology of optics cavity configuration has been invented, photon absorption efficiency can have been improved from 30% to 90% or more；It adopts
With the inductive material of superconducting transition temperature lower (0.9K) and the Si substrate of suspension structure, energy resolution expection can be reduced
50% or more.
Detailed description of the invention
Fig. 1 is the structure chart of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy.
Fig. 2 is photon number and the distinguishable superconductive microwave dynamic inductance detector optics cavity structure chart of energy.
Fig. 3 is the light of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy near 1550nm wave band
Absorption efficiency figure.
Wherein, 1, interdigital capacitor；2, inductance item；3, anti-reflection film；4, Anti-reflective coating；5, Si substrate.
Specific embodiment
A specific embodiment of the invention is described below, in order to facilitate understanding by those skilled in the art this hair
It is bright, it should be apparent that the present invention is not limited to the ranges of specific embodiment, for those skilled in the art,
As long as various change is in the spirit and scope of the present invention that the attached claims limit and determine, these variations are aobvious and easy
See, all are using the innovation and creation of present inventive concept in the column of protection.
According to one embodiment of the application, the distinguishable superconductive microwave dynamic inductance of the photon number and energy of this programme
Detector, core are the superconducting resonator for collecting general construction (with reference to Fig. 1)；Resonator includes for inhibiting two energy level in substrate
The interdigital capacitor 1 (hereinafter referred to as IDC) of impurity noise and inductance item 2 as photo-absorption region；Inductance item 2 is in parallel with capacitor 1.
It is 0.6mm × 0.6mm that interdigital capacitor 1, which has a biggish area, and line width is 5 μm, with a thickness of 200nm, material
For Al or Nb, superconducting transition temperature is all larger than 1K, and such design can effectively inhibit two level impurities bring in substrate
Noise.
Inductance item 2 is used as photo-absorption region, and material is made of at least one layer of TiN/Ti/TiN film, suiperconducting transition temperature
Degree is 0.9K, and with a thickness of 20nm, area is 10 μm of 10 μ m.The superconducting transition temperature (0.9K) of inductance item 2 is less than the superconduction of IDC
Transition temperature (1.2K) is conducive to obstruct diffusion of the quasi particle excited in inductor section to capacitor regions, to reduce scattering light
Son absorbs bring by IDC and influences, and realizes more uniform photo response；Superconducting transition temperature is lower simultaneously, in same intensity
Light irradiation under have stronger response signal (signal amplitude be inversely proportional to superconducting transition temperature Tc), therefore TcThe TiAlN thin film of ≈ 0.9K
Compared to TcThe TiAlN thin film of ≈ 1.4K, energy resolution expection can reduce by 50%.
With reference to Fig. 2, optics cavity configuration design, for maximizing the absorbed probability of photon for being incident on photo-absorption region.
The design of optics cavity configuration are as follows:
The Si substrate 5 of the lower section of inductance item 2 is in suspended state, Si substrate with a thickness of 10~20 μm；Such design can
The thermal phonon for generating incident photon is limited in light absorption area nearby rather than is dissipated by substrate, increases energy again
The probability for breaking cooper electronics pair once again is absorbed by TiAlN thin film, so as to further increase the responsiveness of detector, reduces energy
Measure resolution ratio.
Increase in the uniformly distributed one layer of anti-reflection film 3 in the upper surface of TiAlN thin film in the uniformly distributed one layer of Anti-reflective coating 4 in its lower surface
The material of permeable membrane is α-Si, SiNxOr SiO2；The material of Anti-reflective coating 4 is Ag, Au or Al.The effect of anti-reflection film 3 is to reduce light to exist
The reflection of TiAlN thin film upper surface, the effect of Anti-reflective coating 4 be will not by TiAlN thin film absorb and the photon of transmissive reflects,
Increase the probability absorbed by photonic absorption area；By the way that certain thickness aimed thin film material is plated in Si or Sapphire Substrate
On, using the reflection and transmission coefficients of spectrometer measurement film, various thin-film materials answering under each wave band counter can be released
Refractive index, the optimal thickness of anti-reflection film when so as to for target wave band design efficiency of light absorption maximum.
With reference to Fig. 3, using optical transport matrix method (optical transfer matrix method), Binding experiment is surveyed
The complex index of the various thin-film materials measured can calculate the TiAlN thin film for single layer 80nm thickness, in 1550nm wave band
Efficiency of light absorption be about 27%, there is 73% energy loss to fall and (reflected and transmitted)；And one layer is plated on TiAlN thin film
After the α-Si of 68nm thickness, photon absorption efficiency be can be improved to 92% (reflectivity 0, transmissivity 8%)；If added down
The reflecting layer in face, absorption efficiency can then be increased to 100%.
The present invention compared to traditional technology, the photon absorption efficiency for the MKID that number of photons is differentiated can be promoted to 90% with
On, solve the problems, such as that existing MKID technology detection efficient is low；The expected response that can be further improved device of the invention simultaneously
Degree reduces energy resolution.
Although being described in detail in conjunction with specific embodiment of the attached drawing to invention, should not be construed as to this patent
Protection scope restriction.In range described by claims, those skilled in the art are without creative work
The various modifications and deformation made still belong to the protection scope of this patent.
Claims (5)
1. a kind of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy, it is characterised in that: summarized including collection
The superconducting resonator of structure；The resonator includes for inhibiting in substrate the interdigital capacitor of two level impurities noises and inhaling as light
Receive the inductance item in region；The inductance item is embedded on interdigital capacitor, and in parallel with interdigital capacitor；
The inductance item includes at least one layer of TiAlN thin film, and the superconducting transition temperature of TiAlN thin film is 0.9K, with a thickness of 20nm, area
It is 10 μm of 10 μ m；The material of the interdigital capacitor is Al film, superconducting transition temperature 1.2K, with a thickness of 200nm, line width
It is 5 μm, area is 0.6mm × 0.6mm；Si substrate below the inductance item is in suspended state, Si substrate with a thickness of
10μm；In the uniformly distributed one layer of anti-reflection film in the upper surface of the TiAlN thin film, uniformly distributed one layer of Anti-reflective coating thereunder.
2. photon number according to claim 1 and the distinguishable superconductive microwave dynamic inductance detector of energy, feature
It is, the material of the inductance item is TiN or TiN/Ti/TiN film, and area is 10 μm of 10 μ m, and with a thickness of 20nm, superconduction turns
Temperature is 0.9K.
3. photon number according to claim 1 and the distinguishable superconductive microwave dynamic inductance detector of energy, feature
It is, the area of the interdigital capacitor is 0.6mm × 0.6mm, and line width is 5 μm, and material is Al or Nb, and superconducting transition temperature is big
In 1K.
4. photon number according to claim 1 and the distinguishable superconductive microwave dynamic inductance detector of energy, feature
It is, the material of the anti-reflection film is α-Si, SiNxOr SiO2；The material of the Anti-reflective coating is Ag, Au or Al.
5. photon number according to claim 1 and the distinguishable superconductive microwave dynamic inductance detector of energy, feature
It is, the Si substrate below the inductance item is suspension structure, with a thickness of 10 μm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116592774A (en) * | 2023-07-18 | 2023-08-15 | 成都洋湃科技有限公司 | Pipe wall dirt detection method and device, storage medium and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1512597A (en) * | 2002-12-30 | 2004-07-14 | 三星电子株式会社 | Wave length selective photoelectric detector |
| JP2009021478A (en) * | 2007-07-13 | 2009-01-29 | National Institute Of Advanced Industrial & Technology | Particle and photon detector |
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2018
- 2018-07-23 CN CN201810812775.7A patent/CN109000792A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1512597A (en) * | 2002-12-30 | 2004-07-14 | 三星电子株式会社 | Wave length selective photoelectric detector |
| JP2009021478A (en) * | 2007-07-13 | 2009-01-29 | National Institute Of Advanced Industrial & Technology | Particle and photon detector |
Non-Patent Citations (1)
| Title |
|---|
| W. GUO 等: "Counting Near Infrared Photons with Microwave Kinetic Inductance Detectors", 《APPLIED PHYSICS LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116592774A (en) * | 2023-07-18 | 2023-08-15 | 成都洋湃科技有限公司 | Pipe wall dirt detection method and device, storage medium and electronic equipment |
| CN116592774B (en) * | 2023-07-18 | 2023-09-19 | 成都洋湃科技有限公司 | Pipe wall dirt detection method and device, storage medium and electronic equipment |
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