CN108987498A - 一种包含“线中点”的复合型纳米线核壳结构 - Google Patents
一种包含“线中点”的复合型纳米线核壳结构 Download PDFInfo
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Abstract
本发明属于半导体光电子技术学领域，涉及一种包含“线中点”的复合型纳米线核壳结构，在衬底层上由下至上依次包括：一GaAs（111）B衬底材料，该衬底用于在其上外延生长纳米线各段材料；一掩膜层，用于形成图型衬底，为纳米线生长提供孔隙并覆盖住纳米线之间的间隙，为SiO2材料；一下缓冲段纳米线，为GaAs材料；一纳米线包层，与GaAs段形成径向异质结，为InxGa1‑xAs材料（0.01≤x≤1）；一下应变补偿段，在GaAs下缓冲段与InxGa1‑xAs包层之上，材料为GaAsyP1‑y（0.01≤y≤1）；一下台阶段，材料为GaAs；一“量子点”段，材料为InxGa1‑xAs（0.01≤x≤1）；一上台阶段，材料为GaAs；一上应变补偿段，材料为GaAsyP1‑y（0.01≤y≤1）；一上覆盖段，材料为GaAs；一纳米线包层，材料为GaAs。
Description
技术领域
本发明涉及半导体光电子技术领域，是一种包含 “线中点”的复合型纳米线核壳结构。
背景技术
以GaAs基材料为代表的半导体纳米线结构在新一代光电子材料与器件领域具有广泛的应用前景，近年来一直是国内外研究的热点之一。由于GaAs基纳米线结构具有高表面-体积比特性，适合于制备光电集成器件，因而受到了广泛的关注和研究。近几年的研究结果表明，通过改善GaAs基纳米线生长质量、尺寸和形貌，可以提高其光学、电学等特性，进一步应用于不同类型的光电子器件中。特别是InGaAs纳米线因其窄带宽、复合中心少、载流子迁移率高、量子效率高、漏电流小和抗辐射等优点，更被广泛应用于半导体激光器、场效应晶体管、太阳能电池及红外光探测器等光电子器件。
为了应对硅微电子技术的瓶颈以及满足当今社会对信息量急剧膨胀的需求，基于量子力效应的纳米半导体光电子技术成为当今国际研究的重点和热点。半导体纳米线的高表面-体积比使其非常适合制备光电集成器件，并受到了广泛的关注和研究。
在众多半导体材料体系中，InxGa1-xAs可覆盖近红外波段且能够在高工作温度下保持高探测率，具有良好的均匀性、稳定性，优秀的空间抗辐照性能、高吸收系数和迁移率，使其在微波、高速及高电子迁移器件的制备方面有着广阔的应用前景，已经被广泛应用到相关器件。
于半导体纳米线的电子、空穴和光子被限制在二维空间内，就使得他们可以沿一个维度自由运动。研究表明通过控制纳米线的尺寸和形貌，可以调节其光学、电学等特性，以适应不同类型的光电器件。
2012年日本北海道大学T. Fukui研究组报道了利用无催化生长条件在GaAs图形衬底制备上外延生长GaAs/AlGaAs、InP/InAs/InP和GaAs/GaAsP轴向和径向异质结结构纳米线。GaAs/AlGaAs核壳结构纳米线的生长方向与衬底基本垂直，呈现明显柱形或六棱柱形，表明带有InGaAs量子阱的GaAs/InGaAs结构、带有GaAs量子阱的GaAs/AlGaAs结构纳米线、以及带有GaAs/GaAsP结构纳米线，三种不同结构均增强了纳米线的光致荧光光谱强度，这种光学特性充分表明具有核壳结构的纳米线能够应用在光电子发光器件中。
2013年马来西亚工业大学 Othaman研究组在低温下MOCVD生长了Au催化InGaAs纳米线，在生长温度为400℃时，纳米线与衬底垂直，呈六棱柱形，其直径尺寸为80nm-150nm。研究结果表明低温生长可以抑制柱形纳米线转变为锥形纳米线，纳米线的长度和直径也都随着生长温度的升高而增加。该小组对InGaAs纳米线的In组分进行深入研究，发现In组分会严重影响纳米线的锥形生长模式，锥形纳米线的数量会随着In组分的增加而增多，同时纳米线的锥形程度也会随着材料中In组分的增加而加剧。
2015年日本东京大学Arakawa教授研究组在《Nature Photonics》上报道了一种包含有InGaAs量子点的单根GaAs纳米线新型结构，在优化纳米线的外延生长条件后，外延生长得到了Al0.1Ga0.9As/GaAs核壳复合结构纳米线，该核壳纳米线中包含50层In0.22Ga0.78As量子点的单根GaAs纳米线。在合理设计纳米线的谐振腔后，外延生长了50层In0.22Ga0.78As量子点的Al0.1Ga0.9As /GaAs核壳复合结构纳米线，并把这种复合结构的单根纳米线转移到SiO2/Si衬底上，从而实现了在光泵条件下单根复合结构纳米线室温激射发光。
2012年中科院长春光机所缪国庆研究组在Si(100)衬底上MOCVD外延生长了In催化InP/InGaAs核壳结构纳米线，研究结果表明在InGaAs壳层材料生长过程中，InP纳米线顶端的催化剂在高温、富P的环境中，快速转化为含有 In、P 合金的颗粒。2013年中科院半导体所牛智川研究组报道了Si（111）衬底上MBE（分子束外延）生长的Ga催化GaAs/AlGaAs核壳纳米线结构，该纳米线存在两种状态：一种是直接在纳米线侧壁上“附着”量子点，另一种是带有“枝状”结构的纳米线，量子点位于“枝”与“干”的交接处，实现了InAs量子点掩埋在枝状GaAs/AlGaAs纳米线中，该枝状结构纳米线可形成纳米微腔结构，能应用于光电子集成器件中。
然而，由于In原子不稳定且迁移长度大于Ga原子，In原子会向邻近的纳米线迁移扩散，以及GaAs/InGaAs异质结构晶格失配引起的应变和位错等原因，导致纳米线生长质量变差，表面形貌难以得到有效控制，常出现“锥形”、“扭折”、“细丝状”等现象，纳米线的生长机理变得十分复杂。针对新型纳米光电子材料与器件对纳米线的需求，本发明提出一种包含 “线中点”的复合型纳米线核壳结构。
纳米线作为“一维”纳米结构，本身的生长就具有一定难度，材料之间存在晶格常数差，即晶格失配。当所生长的结构为纳米线时，样品本身存在较大的“长度与直径比”，就使得样品对于晶格失配更为敏感，容易导致纳米线结构出现“倾倒”、“扭折”等现象，不利于控制样品形貌。因GaAsyP1-y通常被用作量子阱势垒层来改善外延结构的发光特性，故本发明用GaAsyP1-y材料作为应变补偿结构，以提高纳米线质量。除改善晶格质量外，GaAsyP1-y也可以提高量子阱俘获载流子的能力，从而降低阈值电流密度并提高内量子效率，还可用作为势垒层来提高器件功率和温度特性。
纳米线的发光特性受到限制。由于生长过程中存在的难度，例如纳米线分布不均、形貌难以控制、材料组分不定等原因，限制了纳米线材料的选择和结构的设计，导致纳米线的发光特性始终得不到提升。所以在制备纳米线异质结构时，要提升其发光特性，就需要在优化生长质量的同时，提出能够有效改善发光的纳米线结构。
本发明提出一种包含 “线中点”的复合型纳米线核壳结构，利用InxGa1-xAs和GaAsyP1-y的特殊能带结构和晶格属性使得纳米线的生长质量得到优化，最终得到具有良好发光特性的纳米线材料。
发明内容
本发明的目的在于提供一种包含 “线中点”的复合型纳米线核壳结构，将“量子点”引入到纳米线结构当中，最终实现材料的形貌和发光质量的改善。
为了实现上述目的，本发明提出了一种包含 “线中点”的复合型纳米线核壳结构，包括：一（111）B面的GaAs衬底材料，该衬底用于在其上外延生长纳米线各段材料；一掩膜层，用于形成图型衬底，为纳米线生长提供孔隙并覆盖住纳米线之间的间隙，为SiO2材料；一下缓冲段纳米线，在衬底上，为GaAs材料； 一纳米线包层，与GaAs段形成径向异质结，为InxGa1-xAs材料（0.01≤x≤1）；一下应变补偿段，在GaAs下缓冲段与InxGa1-xAs包层之上，材料为GaAsyP1-y（0.01≤y≤1）；一下台阶段，在下应变补偿段上，材料为GaAs；一“量子点”段，在下台阶段上，材料为InxGa1-xAs（0.01≤x≤1）；一上台阶段，在“量子点”段上，材料为GaAs；一上应变补偿段，在上台阶段上，材料为GaAsyP1-y（0.01≤y≤1）；一上覆盖段，在上应变补偿，材料为GaAs；一纳米线包层，材料为GaAs。
其中将GaAs缓冲段纳米线直径控制在200nm，将InxGa1-xAs纳米线包层厚度控制为30nm。
其中“量子点”段为InxGa1-xAs材料（0.01≤x≤1），通过控制该段材料的长度，使其成为近似“量子点”结构，形成InxGa1-xAs “线中点”结构，从而实现单光子发光。
其中上、下应变补偿段选用材料GaAsyP1-y（0.01≤y≤1），其特征在于，GaAsyP1-y材料的晶格常数能够小于GaAs和InxGa1-xAs材料，在GaAs段与InxGa1-xAs段之间形成应变补偿，改善纳米线生长质量。
附图说明
图1 是本发明提出一种包含“线中点”的复合型纳米线核壳结构示意图。
具体实施方式
以下结合附图对具体实施例进行详细描述，进一步说明本发明的结构、特点。
下面结合图1详细说明本发明中采用“线中点”的复合型纳米线核壳结构的特点。结构主要包括：如图1所示，在衬底层上由下至上依次包括：一 GaAs（111）B面的衬底材料1，该衬底用于在其上外延生长纳米线各段材料；一掩膜层2，用于形成图型衬底，为纳米线生长提供孔隙并覆盖住纳米线之间的间隙，为SiO2材料；一下缓冲段纳米线3，在衬底1上，为GaAs材料；一纳米线包层4，与GaAs段形成径向异质结，为InxGa1-xAs材料；一下应变补偿段5，在GaAs下缓冲段3与InxGa1-xAs包层4之上，材料为GaAsyP1-y；一下台阶段6，在下应变补偿段5上，材料为GaAs；一“量子点”段7，在下台阶段6上，材料为InxGa1-xAs；一上台阶段8，在“量子点”段7上，材料为GaAs；一上应变补偿段9，在上台阶段8上，材料为GaAsyP1-y；一上覆盖段10，在上应变补偿9之上，材料为GaAs；一纳米线包层11，材料为GaAs。
本发明在GaAsyP1-y段与InxGa1-xAs段加入GaAs台阶段，厚度控制在5nm，使得在InxGa1-xAs段内生成的载流子更容易从InxGa1-xAs段跃出，有利于改善发光特性。
以上所述，仅为本发明中的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉该技术的人在本发明所揭露的技术范围内，可轻易想到的变换或替换，都应涵盖在本发明的包含范围之内。因此，本发明的保护范围应该以权利要求书的保护范围为准。
Claims (5)
1.一种包含“线中点”的复合型纳米线核壳结构，其特征在于，在衬底层上由下至上依次包括： 一（111）B面的GaAs衬底材料，该衬底用于在其上外延生长纳米线各段材料；一掩膜层，用于形成图型衬底，为纳米线生长提供孔隙并覆盖住纳米线之间的间隙，为SiO2材料；一下缓冲段纳米线，为GaAs材料； 一纳米线包层，与GaAs段形成径向异质结，为InxGa1- xAs材料（0.01≤x≤1）；一下应变补偿段，材料为GaAsyP1-y（0.01≤y≤1）；一下台阶段，材料为GaAs；一“量子点”段，材料为InxGa1-xAs（0.01≤x≤1）；一上台阶段，材料为GaAs；一上应变补偿段，材料为GaAsyP1-y（0.01≤y≤1）；一上覆盖段，材料为GaAs；一纳米线包层，材料为GaAs。
2.根据权利要求1 所述的包含“线中点”的复合型纳米线核壳结构，“量子点”段为InxGa1-xAs材料（0.01≤x≤1），控制该段材料的长度，形成InxGa1-xAs “线中点”结构，从而实现单光子发光。
3.根据权利要求1 所述的包含“线中点”的复合型纳米线核壳结构，上、下应变补偿段选用材料GaAsyP1-y（0.01≤y≤1），其特征在于，GaAsyP1-y材料的晶格常数能够小于GaAs和InxGa1-xAs材料，在GaAs段与InxGa1-xAs段之间形成应变补偿，改善纳米线生长质量。
4.根据权利要求1 所述的包含“线中点”的复合型纳米线核壳结构，在GaAsyP1-y段与InxGa1-xAs段加入GaAs台阶段，厚度控制在5nm，使得在InxGa1-xAs段内生成的载流子更容易从InxGa1-xAs段跃出，有利于改善发光特性。
5.根据权利要求1 所述的包含“线中点”的复合型纳米线核壳结构，未使用AlxGa1-xAs材料，不含Al元素，该结构有利于提高半导体器件的寿命。
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