CN108987363A - A kind of Metal Packaging rectifier diode and its manufacturing method - Google Patents
A kind of Metal Packaging rectifier diode and its manufacturing method Download PDFInfo
- Publication number
- CN108987363A CN108987363A CN201810737044.0A CN201810737044A CN108987363A CN 108987363 A CN108987363 A CN 108987363A CN 201810737044 A CN201810737044 A CN 201810737044A CN 108987363 A CN108987363 A CN 108987363A
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- stem
- pipe cap
- die assemblies
- tube socket
- rectifier diode
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- 239000002184 metal Substances 0.000 title claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 41
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000429 assembly Methods 0.000 claims abstract description 41
- 230000000712 assembly Effects 0.000 claims abstract description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910000679 solder Inorganic materials 0.000 claims abstract description 13
- 238000007789 sealing Methods 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 238000005476 soldering Methods 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000005422 blasting Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 2
- 230000006641 stabilisation Effects 0.000 abstract description 2
- 238000011105 stabilization Methods 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Rectifiers (AREA)
Abstract
A kind of Metal Packaging rectifier diode of the present invention and its manufacturing method, diode include tube socket, die assemblies, stem and pipe cap；Tube socket and pipe cap are respectively formed the first and second electrode；Die assemblies are welded on tube socket, and one end of stem is welded on die assemblies, and the other end is fixedly connected with pipe cap；Stem is arranged across pipe cap, and pipe cap is tightly connected with tube socket and stem respectively；Stem is knitted to form by multiply metal wire, and both ends are provided with the metallic sheath for fastening metal line.Manufacturing method includes obtaining powering on pole piece and lower electrode slice, and die assemblies and sintering soldering and sealing are made in sintering.It can satisfy the use demand greater than 5A electric current, heat-sinking capability is strong, simple in sturcture, ingenious in design；It ensure that quality of connection and on state characteristic.This method ensure that the sintering quality and its reliability of die assemblies, it is ensured that the good viscous profit of part and solder is realized die assemblies and naked copper tube socket, stem, the stabilization of red copper ring, reliable, quick direct sintering.
Description
Technical field
The present invention relates to semiconductor components and devices preparation technical field, specially a kind of Metal Packaging rectifier diode and its system
Make method.
Background technique
Rectifier diode is a kind of for alternating current to be changed into the semiconductor devices of direct current, and application field is extensive.
One of Common Parameters maximum average rectified current IF important as its are able to reflect the working performance of rectifier diode, definition
For allow when diode long-term work by maximum forward average current, which is determined by the junction area and radiating condition of PN junction
It is fixed.Should be noted that when use cannot be greater than this value by the average current of diode, and meet radiating condition.Such as 1N4000 system
The IF of column diode is 1A, is plastic device, product quality grade is low, reliability is low.In the prior art due to rectifying two poles
The limitation of the structure and manufacture craft of pipe, IF value is in 5A hereinafter, 5A will be reached by being unable to satisfy the IF under some application conditions
Above demand.
Summary of the invention
Aiming at the problems existing in the prior art, the present invention provides that a kind of maximum average rectified current is big, and heat-sinking capability is strong,
It is structurally reasonable, the Metal Packaging rectifier diode and its manufacturing method of simple process.
The present invention is to be achieved through the following technical solutions:
A kind of Metal Packaging rectifier diode, including tube socket, die assemblies, stem and pipe cap；Tube socket and pipe cap difference
Form the first and second electrode；
The die assemblies are welded on tube socket, and one end of stem is welded on die assemblies, and the other end is fixedly connected
Pipe cap；Stem is arranged across pipe cap, and pipe cap is tightly connected with tube socket and stem respectively；
The stem is knitted to form by multiply metal wire, and both ends are provided with the metallic sheath for fastening metal line.
Preferably, the stem and one end outer cover of die assemblies welding are equipped with positioning ring, positioning ring and lead
Column and die assemblies are welded as a whole.
Preferably, the part for stem being tightly connected on the pipe cap is provided with ceramic insulator, pipe cap and tube socket it
Between connected by soldering and sealing sealing structure.
Preferably, the free end setting threaded connector of the tube socket forms first electrode, and pipe cap free end is provided with
Through-hole forms second electrode.
Preferably, the die assemblies to include by tube core solder be successively in coaxial welding power on pole piece, tube core and under
Electrode slice；The area for powering on pole piece is less than the area of lower electrode slice；It powers on pole piece and stem welds, lower electrode slice and tube socket weld
It connects.
Preferably, metal wire and metallic sheath are all made of red copper and are made.
A kind of Metal Packaging rectifier diode manufacturing method, includes the following steps,
Top electrode matrix and lower electrode matrix are carried out Nickel Plating Treatment by step 1, then in hydrogen atmosphere, with 790~
820 DEG C of temperature, constant temperature handle 25~35 minutes and obtain powering on pole piece and lower electrode slice；
Step 2, will power on pole piece, tube core and lower electrode slice and tube core solder is fitted into sintering in mold and tube core group is made
Part；
Step 3 by die assemblies, and is not electroplated and is carried out the tube socket, stem and positioning of cleaning pretreatment
Ring is fitted into mold, load solder after 380~410 DEG C at a temperature of be sintered, be finally inserted in pipe cap, and by with
The Metal Packaging rectifier diode is obtained after the soldering and sealing of tube socket.
Further, in step 1 when nickel plating, blasting pressure be 2~4kg, nickel-plating liquid proportion in sodium hypophosphite content not
More than 8g.
Further, the stem is woven by multiply metal wire, and both ends pass through metallic sheath for metal wire bag fastening
It is fixed.
Compared with prior art, the invention has the following beneficial technical effects:
Diode of the present invention realizes die assemblies and pipe cap by the stem being knitted to form by multiply metal wire
Connection, formed second electrode, increase the high current tolerance and reliability of current path, can satisfy greater than 5A electricity
The use demand of stream, heat-sinking capability is strong, simple in sturcture, ingenious in design；It and is the sintering for ensuring strand copper wire and die assemblies
Viscous profit quality, strand copper wire both ends are packed tightly with metallic sheath and are in the form of a column, ensure that quality of connection and on state characteristic.
Further, the setting of positioning ring ensures the sintering positioning and sintering quality of die assemblies and stem, avoids
Stem during the manufacturing deviates, and improves product quality and reliability.
Further, by the processing respectively to tube socket and pipe cap, the whole assembly properties and connection of diode are improved
Stability.
Method of the present invention is realized by welding, sintering and the soldering and sealing of pipe cap under successively different condition to rectification two
The structure of pole pipe connects and Metal Packaging；Using the Nickel Plating Treatment to power-on and power-off pole piece, the sintering quality of die assemblies ensure that
And its reliability；It is used cooperatively again with unplated tube socket, stem, red copper ring, by being pre-processed to part, it is ensured that
The good viscous profit of part and solder is realized the stabilization, reliable, quickly of die assemblies and naked copper tube socket, stem, red copper ring
Direct sintering.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of Metal Packaging rectifier diode described in the embodiment of the present invention.
Fig. 2 is the structure top view of positioning ring described in the embodiment of the present invention.
Fig. 3 is the structure top view of die assemblies described in the embodiment of the present invention.
Fig. 4 is the cross-sectional view of Fig. 3 described in the embodiment of the present invention.
Fig. 5 is the structural schematic diagram of stem described in the embodiment of the present invention.
In figure: tube socket 1, die assemblies 2, stem 3, pipe cap 4, soldering and sealing structure 5, positioning ring 6；Tube core solder 21, powers on
Pole piece 22, tube core 23, lower electrode slice 24；Metal wire 31, metallic sheath 32；Ceramic insulator 41.
Specific embodiment
Below with reference to specific embodiment, the present invention is described in further detail, it is described be explanation of the invention and
It is not to limit.
A kind of Metal Packaging rectifier diode of the present invention, as Figure 1-Figure 5, including tube socket 1, die assemblies 2, stem
3 and pipe cap 4；Tube socket 1 and pipe cap 4 are respectively formed the first and second electrode, and the die assemblies 2 are welded on tube socket 1, stem 3
One end is welded on die assemblies 2, and the other end is fixedly connected with pipe cap 4；Stem 3 across pipe cap 4 be arranged, pipe cap 4 respectively with pipe
Seat 1 and stem 3 are tightly connected；The stem 3 is knitted to form by multiply metal wire 31, and both ends are provided with for fastening gold
Belong to the metallic sheath 32 of line.
Wherein, one end outer cover that stem 3 and die assemblies 2 weld be equipped with positioning ring 6, positioning ring 6 and stem 3 with
And die assemblies 2 are welded as a whole.The part that stem 3 is tightly connected on pipe cap 4 is provided with ceramic insulator 41, pipe cap 4
Lower end is tightly connected by soldering and sealing structure 5 and tube socket 1.The free end setting threaded connector of tube socket 1 forms first electrode, pipe cap
4 free ends are provided with through-hole and form second electrode.Die assemblies 2 include by tube core solder 21 successively in the top electrode of coaxial welding
Piece 22, tube core 23 and lower electrode slice 24；The area for powering on pole piece 22 is less than the area of lower electrode slice 24；Power on pole piece 22 and lead
Column 3 welds, and lower electrode slice 24 is welded with tube socket 1.Metal wire 31 and metallic sheath 32 are all made of red copper and are made.
Method of the present invention includes the following steps,
Upper/lower electrode matrix is first carried out Nickel Plating Treatment: selecting suitable 2~4kg of blasting pressure by step 1；Nickel-plating liquid is matched
The content of strict control sodium hypophosphite, must not exceed 8g than in；Alloy, alloy temperature are carried out after the nickel plating of power-on and power-off pole piece
790~820 DEG C of degree constant temperature time 25~35 minutes, leads to hydrogen.In this preferred embodiment, blasting pressure uses 2.5~3kg, alloy
810 DEG C of temperature, constant temperature time 30 minutes；
Step 2, will power on pole piece 22, tube core 23 and lower electrode slice 24 and tube core solder 21 is fitted into mold the system that is sintered
At die assemblies 2, Test And Checkout is carried out to burned die assemblies.
Step 3 by die assemblies 2, and is not electroplated and is carried out the tube socket 1 of cleaning pretreatment, stem 3 and fixed
Position ring 6, is fitted into mold, filling solder after 380~410 DEG C at a temperature of be sintered, be finally inserted in pipe cap 4 and sealed
Weldering, and the Metal Packaging rectifier diode is obtained after fixed pipe cap 4.By forming soldering and sealing structure 5 after the sealing cap to pipe cap 4.
Wherein, tube socket, stem, red copper ring are unplated, are naked copper, for the good viscous profit for ensuring solder, cope with part
Pre-processed, and by die assemblies and naked copper tube socket, stem, red copper ring direct sintering, through x-ray fluoroscopy, naked copper directly with
The bad viscous humidity of die assemblies sintering has controlled within 8%, reaches advanced world standards.
The stem used is strand copper wire, to ensure that profit quality is glued in the sintering of strand copper wire and die assemblies, by multiply
Copper wire both ends are packed tightly with red copper set.Positioning ring made of red copper is for ensuring that the sintering of die assemblies and stem positions and burning
Tie quality.
Usually used diode is mostly plastic packaging or glassivation encapsulation diode, and operating current IF is small, and IF value is in 5A
Hereinafter, and product can only be radiated by the outer lead at both ends, heat dissipation effect is poor, and is unable to satisfy user to high current diode
Demand；The present invention relates to a kind of high current Metal Packaging rectifier diodes, and the work electricity of product is greatly improved using the structure
Stream, heat-sinking capability, qualification rate and reliability, this operation, is cured in technical papers by significant effect in actual operation, and
It is widely used in the batch production of product；High current Metal Packaging rectifier diode of the present invention, as a kind of new varieties, new knot
Structure, it operating current is big, heat-sinking capability in terms of have obviously advantage, high current metal envelope of the present invention
The IF of dress rectifier diode has reached 35A~60A, and product is with operating current is big, heat-sinking capability is strong, credit rating is high, reliable
Property it is horizontal high the features such as.
Claims (9)
1. a kind of Metal Packaging rectifier diode, which is characterized in that including tube socket (1), die assemblies (2), stem (3) and pipe
Cap (4)；Tube socket (1) and pipe cap (4) are respectively formed the first and second electrode；
The die assemblies (2) are welded on tube socket (1), and one end of stem (3) is welded on die assemblies (2), the other end
It is fixedly connected with pipe cap (4)；Stem (3) is arranged across pipe cap (4), and pipe cap (4) is sealed with tube socket (1) and stem (3) respectively
Connection；
The stem (3) is knitted to form by multiply metal wire (31), and both ends are provided with the metallic sheath for fastening metal line
(32)。
2. a kind of Metal Packaging rectifier diode according to claim 1, which is characterized in that the stem (3) with
One end outer cover of die assemblies (2) welding is equipped with positioning ring (6), positioning ring (6) and stem (3) and die assemblies (2)
It is welded as a whole.
3. a kind of Metal Packaging rectifier diode according to claim 1, which is characterized in that close on the pipe cap (4)
The part of envelope connecting lead wire column (3) is provided with ceramic insulator (41), passes through soldering and sealing structure (5) between pipe cap (4) and tube socket (1)
It is tightly connected.
4. a kind of Metal Packaging rectifier diode according to claim 1, which is characterized in that the tube socket (1) from
First electrode is formed by end setting threaded connector, pipe cap (4) free end is provided with through-hole and forms second electrode.
5. a kind of Metal Packaging rectifier diode according to claim 1, which is characterized in that the die assemblies (2)
Including successively powering on pole piece (22), tube core (23) and lower electrode slice (24) in coaxial welding by tube core solder (21)；Top electrode
The area of piece (22) is less than the area of lower electrode slice (24)；Pole piece (22) and stem (3) are powered on to weld, lower electrode slice (24) with
Tube socket (1) welding.
6. a kind of Metal Packaging rectifier diode according to claim 1, which is characterized in that metal wire (31) and metallic sheath
(32) red copper is all made of to be made.
7. a kind of Metal Packaging rectifier diode manufacturing method, which is characterized in that include the following steps,
Top electrode matrix and lower electrode matrix are carried out Nickel Plating Treatment, then in hydrogen atmosphere, with 790~820 DEG C by step 1
Temperature, constant temperature handles and obtains powering on pole piece (22) and lower electrode slice (24) for 25~35 minutes；
Step 2 will power on pole piece (22), and tube core (23) and lower electrode slice (24) and tube core solder (21) are fitted into mold and burn
Die assemblies (2) are made in knot；
Step 3, by die assemblies (2), and be not electroplated and carried out the tube socket (1) of cleaning pretreatment, stem (3) and
Positioning ring (6), is fitted into mold, load solder after 380~410 DEG C at a temperature of be sintered, be finally inserted in pipe cap (4)
In, and by obtaining the Metal Packaging rectifier diode after the soldering and sealing with tube socket (1).
8. a kind of Metal Packaging rectifier diode manufacturing method according to claim 7, which is characterized in that plated in step 1
When nickel, blasting pressure is 2~4kg, and the content of sodium hypophosphite is no more than 8g in nickel-plating liquid proportion.
9. a kind of Metal Packaging rectifier diode manufacturing method according to claim 7, which is characterized in that the lead
Column (3) is woven by multiply metal wire (31), and metal wire (31) is packed tightly fixation by metallic sheath (32) by both ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810737044.0A CN108987363B (en) | 2018-07-06 | 2018-07-06 | Metal-packaged rectifier diode and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810737044.0A CN108987363B (en) | 2018-07-06 | 2018-07-06 | Metal-packaged rectifier diode and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN108987363A true CN108987363A (en) | 2018-12-11 |
| CN108987363B CN108987363B (en) | 2019-12-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113380622A (en) * | 2021-06-11 | 2021-09-10 | 青岛海宜丰电力电子有限公司 | High-temperature diode preparation method and high-temperature diode |
| RU2757166C1 (en) * | 2021-03-22 | 2021-10-11 | Акционерное общество «Аэроэлектромаш» | Diode for rotary rectifier of synchronous electric machine |
| WO2022146370A1 (en) * | 2020-12-31 | 2022-07-07 | Atatürk Üni̇versi̇tesi̇ Bi̇li̇msel Araştirma Projeleri̇ Bi̇ri̇mi̇ | Package system for high current diodes |
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| CN202084668U (en) * | 2011-05-12 | 2011-12-21 | 无锡市东杨电子有限公司 | High-capacity and high-power motive module and flexible connecting strip thereof |
| CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN204167286U (en) * | 2014-09-29 | 2015-02-18 | 西安卫光科技有限公司 | A kind of big current diode chip encapsulating structure |
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2018
- 2018-07-06 CN CN201810737044.0A patent/CN108987363B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202084668U (en) * | 2011-05-12 | 2011-12-21 | 无锡市东杨电子有限公司 | High-capacity and high-power motive module and flexible connecting strip thereof |
| CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN204167286U (en) * | 2014-09-29 | 2015-02-18 | 西安卫光科技有限公司 | A kind of big current diode chip encapsulating structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022146370A1 (en) * | 2020-12-31 | 2022-07-07 | Atatürk Üni̇versi̇tesi̇ Bi̇li̇msel Araştirma Projeleri̇ Bi̇ri̇mi̇ | Package system for high current diodes |
| RU2757166C1 (en) * | 2021-03-22 | 2021-10-11 | Акционерное общество «Аэроэлектромаш» | Diode for rotary rectifier of synchronous electric machine |
| CN113380622A (en) * | 2021-06-11 | 2021-09-10 | 青岛海宜丰电力电子有限公司 | High-temperature diode preparation method and high-temperature diode |
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| Publication number | Publication date |
|---|---|
| CN108987363B (en) | 2019-12-17 |
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