CN108981979A - A kind of ceramics based high-temp-resistant fluid walls face shear stress microsensor chip and its manufacturing process - Google Patents
A kind of ceramics based high-temp-resistant fluid walls face shear stress microsensor chip and its manufacturing process Download PDFInfo
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- CN108981979A CN108981979A CN201810830668.7A CN201810830668A CN108981979A CN 108981979 A CN108981979 A CN 108981979A CN 201810830668 A CN201810830668 A CN 201810830668A CN 108981979 A CN108981979 A CN 108981979A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
Abstract
The present invention relates to a kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chips, comprising: sensing unit (1), supporting beam (2), ceramic base voltage sensitive resistor (3), flexible sheet (4), gap (5), substrate (6) and cavity (7).A kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip of the invention and its manufacturing process, the sensitive resistance of microsensor is prepared using polymer conversion ceramic base heat-resisting material, so that microsensor has the measurement capability to 1000 DEG C or more high temperature flow fields.Furthermore, microsensor manufacture is based on MEMS micro-processing technology, the spatial resolution of microsensor is enabled to reach micron dimension, temporal resolution can reach submillimeter magnitude, suitable for the real-time fining measurement to dither flow field, meet in the development processes such as advanced aircraft, high-performance enginer to the testing requirement in high temperature flow field.
Description
Technical field
The present invention relates to a kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip and its manufacturing process, belong to
Sensor technical field.
Background technique
Fluid wall shear stress is the weight that must be paid close attention in advanced aircraft and high-performance enginer development process of new generation
Want one of parameter.The precise measurement of shear stress is to grasp the premise of frictional resistance, and the pneumatic structure for aircraft and engine is set
Meter and friction loss characteristic analysis are of great significance；Meanwhile shear stress is to judge to turn in fluid boundary layer to twist, separate and attached etc. again
The direct criterion of phenomenon, and postpone fluid and turn to twist the promotion facilitated to aircraft operational efficiency of new generation, inhibit aircraft table
Face flow separation helps avoid the generation of stall event.Therefore, precise measurement fluid wall surface shear stress and the regularity of distribution,
Flow regime is most important to maintenance flight safety in real-time monitoring aircraft surface and engine, is also advanced aircraft and height
The improvement of performance engine accumulates significant data.
When advanced aircraft high-performance cruise, high temperature is generated because of the acting of fluid boundary layer bottom adhesive resistance, aircraft table
The flow regime and flow field structure and dither situation of face fluid boundary layer are difficult to capture；In addition, stream in high-performance enginer
Field is related to 1000 DEG C or more of hot environment, while including complex processes such as high speed, high pressure and burnings, it is difficult to effectively measurement and
It captures.The fining measurement of high temperature, dither flow field has become the advanced opportunity of combat of a new generation and high-performance enginer development must
Must solve critical issue, this both required (micro-) sensor to be resistant to 1000 DEG C or more hot environments, at the same also to guarantee compared with
High resolution ratio and dynamic response frequency, difficulty as one can imagine.
Traditional frictional resistance balance bonds foil gauge on stainless steel elastic slice, for measuring fluid wall shear stress.This method
Main problem be that the size of balance is larger, cause dynamic property and sensitivity insufficient；Meanwhile pressure-sensitive foil gauge heatproof does not surpass
Cross 200 DEG C, it is difficult to meet actual test demand.Shear stress microsensor based on MEMS (MEMS) technology has fine
Sensitivity and response frequency, can satisfy effective capture of stream field dither information, but be equally difficult to be resistant to be more than
1000 DEG C of hot environment.Therefore, problem is measured to solve high temperature fluid wall shear stress, it is necessary to using new material, new side
Method researches and develops high temperature resistant fluid wall shear stress microsensor of new generation.
Summary of the invention
Problem is measured in order to solve the fining of high temperature fluid wall shear stress, the present invention proposes a kind of ceramic based high-temp-resistant
Fluid wall shear stress microsensor chip and its manufacturing process.The shear stress microsensor chip uses the polymerization of current research
Object converts ceramic material (Polymer Derived Ceramic, PDC) and is used as pressure sensitive, is based on MEMS micro-processing technology system
It makes, it can be achieved that measuring real-time, the fining of high temperature flow field and its dither.The ceramic material of use can be more than 1000
DEG C or more keep amorphous state, stablize physics and chemical property stablized, while there is the piezoresistive characteristic of superelevation, be applicable to novel
The development of high temperature resistant pressure, shear stress and hot-fluid etc. (micro-) sensor.The MEMS micro-processing technology of use, it is ensured that micro sensing
Device resolution ratio with higher and dynamic response frequency, can satisfy the capture of stream field dither information.
The present invention uses following scheme:
A kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip of the present invention, as shown in Figure 1, packet
It includes: sensing unit (1), supporting beam (2), ceramic base voltage sensitive resistor (3), flexible sheet (4), gap (5), substrate (6) and cavity
(7)；Wherein, the supporting beam (2) one end and sensing unit (1) are connected, and the other end and flexible sheet (4) are connected；It is sensitive single
It is gap (5) between first (1) surrounding and substrate (6), supporting beam (2) surrounding is cavity (7)；Ceramic base voltage sensitive resistor (3) production
In the upper surface of flexible sheet (4), position is between supporting beam (2) and substrate (6)；The lower surface of flexible sheet (4) and base
Bottom (6) is connected, while being cavity (7) below.The working principle of the microsensor can be expressed as follows: when fluid flows through micro- biography
When sensor surfaces, sensing unit (1) " impression " arrives the effect of sticky shear stress, and the resultant force after Line Integral is passed through supporting beam
(2) flexible sheet (4) are transmitted to；The flexible sheet (4) of stress generates strain, and the resistance value of ceramic base voltage sensitive resistor (3) is caused to change
Become, by detecting the change in resistance amount, the value of tested sticky shear stress can be extrapolated.
A kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip of the present invention is different from traditional frictional resistance
Balance detection mode.Firstly, preparing ceramic base voltage sensitive resistor (3) using novel fire resistant ceramic material, it can guarantee micro sensing
The tolerable temperature of device is more than 1000 DEG C, meets effective measurement to high temperature fluid wall shear stress；Secondly, introducing flexible sheet
(4) structure, and by ceramic base voltage sensitive resistor (3) location arrangements in flexible sheet (4) upper surface, by said three-dimensional body machining process
It is reduced to two-dimensional surface process, efficiently solves the simultaneous of polymer conversion ceramic forming material technique and MEMS micro fabrication
Appearance problem；Again, ceramic base voltage sensitive resistor (3) is arranged symmetrically in supporting beam (2) surrounding, can by difference channel carry out temperature and
Pressure compensation promotes the measurement accuracy of shear stress microsensor；Finally, the gap between sensing unit (1) surrounding and substrate (6)
(5) no more than the characteristic length of minimum flow field structure, guarantee that sensing unit (1) is concordant with the upper surface of surrounding substrate (6), disappear
Except the disturbance of step stream field, craft precision can be guaranteed using MEMS micro fabrication well, reduce substantial measurement errors.
A kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip of the present invention, it is brilliant using two panels SOI
Piece and polymer conversion ceramics precursor liquid solution are micro- based on thermal oxide, sputtering, photoetching, etching and bonding etc. as raw material
Manufacturing process realizes the processing and manufacturing of microsensor chip.The micro- biography of a kind of ceramic based high-temp-resistant fluid walls face shear stress
The manufacturing process flow of sensor chip is as follows:
Step 1: polymer conversion ceramics base voltage sensitive resistor is prepared；
Sub-step 1.1: the device layer of SOI wafer after cleaning generates insulating layer；
Sub-step 1.2: sputtering and patterned metal lead on the insulating layer in sub-step 1；
Sub-step 1.3: photoetching and graphical PDC varistor on the device layer of the SOI wafer in sub-step 2；
Step 2: microsensor support beam structure is etched in the basal layer of SOI wafer 2.；
Sub-step 2.1: photoetching and graphical supporting beam on SOI wafer basal layer 2.；
Sub-step 2.2: inductively coupled plasma body (ICP) etching technics is utilized, by the substrate of SOI wafer in sub-step 1
Layer is carved thoroughly completely, forms support beam structure；
Step 3: the two panels SOI wafer (1. and 2.) in step 1 and step 2 is bonded；
Sub-step 3.1: being respectively activated two panels SOI wafer, so that its surface forms hydrophilic radical, and utilizes and goes
Ion water spray makes the device layer surface of chip be covered with water membrane；
Sub-step 3.2: the device layer of the two panels SOI wafer in sub-step 1 is aligned, pre- key is then carried out on bonder
Conjunction processing；
Sub-step 3.3: the bonding wafer in sub-step 2 is subjected to high-temperature heat treatment in high pure nitrogen, is on the one hand improved
On the other hand bond strength is pyrolyzed polymer conversion ceramic forerunner；
Step 4: etching release micro-sensor structure completes chip manufacture；
Sub-step 4.1: photoetching and graphical flexible sheet structure on SOI wafer basal layer 1.；
Sub-step 4.2: basal layer in step 1 is carved thoroughly using ICP etching technics completely, forms flexible sheet；
Sub-step 4.3: photoetching and graphical sensing unit structure on SOI wafer device layer 2.；
Sub-step 4.4: device layer in step 3 is carved thoroughly using ICP etching technics completely, forms sensing unit；
Detailed description of the invention
Fig. 1 is the structural schematic diagram of ceramic based high-temp-resistant shear stress microsensor；
Fig. 2 is the top view, A-A section and bottom view of ceramic based high-temp-resistant shear stress microsensor；
Fig. 3 is the process flow chart of ceramic based high-temp-resistant shear stress microsensor；
In figure: 1- sensing unit；2- supporting beam；3- ceramics base voltage sensitive resistor；4- flexible sheet；The gap 5-；(6) substrate；
(7) cavity.
Specific embodiment
Ceramic based high-temp-resistant fluid walls face shear stress microsensor chip in the present embodiment, one of main feature are
The preparation of sensitive resistance uses polymer conversion ceramic material, has and its stable physics and chemical property, oxidation resistance
By force, more than 1000 DEG C hot environments are resistant to, are the highest fluid wall shear stress microsensors of current tolerable temperature.It is described
Ceramic based high-temp-resistant fluid walls face shear stress microsensor chip, the two of main feature are the ceramic base pressure of microsensor
Quick resistance is arranged on flexible sheet, and said three-dimensional body machining process is reduced to two-dimensional surface process, guarantees that polymer turns
It is compatible with MEMS micro fabrication to change ceramic forming material technique.The micro- biography of ceramic based high-temp-resistant fluid walls face shear stress
Sensor chip, the three of main feature are that the manufacturing process of microsensor is based on micro-processing technology, so that the sky of microsensor
Between resolution ratio can reach micron dimension, temporal resolution can reach submillimeter magnitude, suitable for dither flow field
Fining measurement in real time.A kind of described ceramic based high-temp-resistant fluid walls face shear stress microsensor chip, main feature it
Four are to be arranged symmetrically using four ceramic base voltage sensitive resistors, carry out temperature and pressure compensation based on Differential Detection principle, reduce
The influence that pressure and temperature exports sensor.
Ceramic based high-temp-resistant fluid walls face shear stress microsensor chip and its manufacturing process, are based on MEMS in the present embodiment
Micro-processing technology development realizes the processing technology of microsensor using SiBCN based polyalcohol conversion ceramic system for varistor,
Specific embodiment is as follows:
Step 1: polymer conversion ceramics base voltage sensitive resistor is prepared in SOI wafer 1. device layer；
Sub-step 1.1: SOI wafer is chosen 1., specification: 30 microns of device layer thickness, 2 microns of oxidated layer thickness, basal layer
It 300 microns of thickness, in deionized water after spray cleaning 60 seconds, is dried up with high pure nitrogen；
SOI wafer in sub-step 1.1: 1. being carried out 5 hours dry-oxygen oxidations by sub-step 1.2, and 1050 DEG C of oxidizing temperature,
Air-flow 5L/min forms the insulating layer of about 300nm on device layer, such as Fig. 3 (1)；
Sub-step 1.3: 30 nanometers of chromium, 50 nano nickels are sputtered on the device layer after in sub-step 1.2 1. SOI wafer aoxidizes
With 100 nanogold as metal electrode layer, photolithography patterning electrode structure, and photoresist such as Fig. 3 is removed using acetone soln
(2)；
Sub-step 1.4: it is equipped with SiBCN precursor solution: by liquid Si BCN alkane, bis- (the 2,4,6- trimethylbenzoyls of phenyl
Base) phosphine oxide and tripropylene glycol dipropyl dilute acid ester liquid mixes according to mass fraction 1:0.04:0.1, in 80 DEG C, 400rpm
It is stirred 2 hours in the magnetic force hot plate of revolving speed, it is spare after natural cooling；
Sub-step 1.5: the SiBCN precursor solution prepared is spin-coated on to the device after in sub-step 2 1. SOI wafer aoxidizes
On layer, photolithography patterning varistor removes uncured portion solution using acetone soln, such as Fig. 3 (3)；
Step 2: microsensor support beam structure is etched in the basal layer of SOI wafer 2.；
Sub-step 2.1: SOI wafer is chosen 2., specification: 30 microns of device layer thickness, 2 microns of oxidated layer thickness, basal layer
It 300 microns of thickness, in deionized water after spray cleaning 60 seconds, is dried up with high pure nitrogen；
Sub-step 2.2: photoetching and graphical support beam structure in the SOI wafer in sub-step 2.1 2. basal layer are formed
The etching mask of support beam structure, such as Fig. 3 (4)；
Sub-step 2.3: utilizing inductively coupled plasma body (ICP) etching technics, by the 2. base of SOI wafer in sub-step 2.2
Bottom is carved thoroughly completely, support beam structure is formed, such as Fig. 3 (5)；
Step 3: the two panels SOI wafer (1. and 2.) in step 1 and step 2 is bonded；
Sub-step 3.1: doing surface activation process to two panels SOI wafer respectively, so that its surface forms hydrophilic radical, and benefit
It is sprayed with deionized water, wafer surface is made to be covered with water membrane；
Sub-step 3.2: the device layer of the two panels SOI wafer in sub-step 3.1 is aligned, is glued chip using Van der Waals force
Knot carries out vacuum on bonder together, then, and bonding is handled in advance, and 300 DEG C, pressure 15MPa of pre- bonding temperature, such as Fig. 3 (6)；
Sub-step 3.3: chip carries out high-temperature heat treatment and to SiBCN in high pure nitrogen after being bonded in sub-step 3.2
Polymer precursor is pyrolyzed, and 1100 DEG C of temperature, time 4h, maximum heating/cooling rate is less than 10 DEG C/min；
Step 4: etching release micro-sensor structure completes chip manufacture；
Sub-step 4.1: photoetching and graphical flexible sheet structure on the basal layer of SOI wafer 1. in step 3；
Sub-step 4.2: utilizing ICP etching technics, and basal layer in sub-step 4.1 is carved thoroughly completely, forms flexible sheet, such as
Fig. 3 (7)；
Sub-step 4.3: photoetching and graphical sensing unit structure on step 3 SOI wafer device layer 2.；
Sub-step 4.4: device layer in step 4.3 is carved thoroughly using ICP etching technics completely, forms sensing unit, such as Fig. 3
(8)；
Sub-step 4.5: microsensor chip manufacturing is completed in scribing；
The ceramic based high-temp-resistant shear stress microsensor manufactured using the above method is based on MEMS micro-processing technology, so that
The spatial resolution of microsensor can reach micron dimension, and temporal resolution can reach submillimeter magnitude, be applicable to multiple
The fixed point of miscellaneous fluid wall shear stress, real-time and precise measurement, effectively capture flow phenomenon in fluid boundary layer；Microsensor is adopted
Varistor is prepared with SiBCN ceramic material, so that microsensor is resistant to more than 1000 DEG C hot environments, meets advanced fly
To the testing requirement in high temperature flow field in the development processes such as row device, high-performance enginer.In addition, utilizing MEMS (MEMS) work
Skill technology prepare microsensor chip, it can be achieved that microsensor chip mass, low cost manufacturing, guarantee microsensor processing
Precision and consistency.
Claims (6)
1. a kind of ceramics based high-temp-resistant fluid walls face shear stress microsensor chip, comprising: sensing unit (1), supporting beam (2),
Ceramic base voltage sensitive resistor (3), flexible sheet (4), gap (5), substrate (6) and cavity (7)；
Wherein, the supporting beam (2) one end and sensing unit (1) are connected, and the other end and flexible sheet (4) are connected；It is sensitive single
It is gap (5) between first (1) surrounding and substrate (6), supporting beam (2) surrounding is cavity (7)；Ceramic base voltage sensitive resistor (3) production
In the upper surface of flexible sheet (4), position is between supporting beam (2) and substrate (6)；The lower surface of flexible sheet (4) and base
Bottom (6) is connected, while being cavity (7) below.The working principle of the microsensor can be expressed as follows: when fluid flows through micro- biography
When sensor surfaces, sensing unit (1) " impression " arrives the effect of sticky shear stress, and the resultant force after Line Integral is passed through supporting beam
(2) flexible sheet (4) are transmitted to；The flexible sheet (4) of stress generates strain, and the resistance value of ceramic base voltage sensitive resistor (3) is caused to change
Become, by detecting the change in resistance amount, the value of tested sticky shear stress can be extrapolated.
2. a kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip, feature exist as claimed in claim 1
In: ceramic base voltage sensitive resistor (3) is prepared using novel fire resistant ceramic material, can guarantee that the tolerable temperature of microsensor is more than
1000 DEG C, meet effective measurement to high temperature fluid wall shear stress.
3. a kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip, feature exist as claimed in claim 1
In: there is flexible sheet (4) structure, and by ceramic base voltage sensitive resistor (3) location arrangements in flexible sheet (4) upper surface, by three
Dimension body processing technology process be reduced to two-dimensional surface process, efficiently solve polymer conversion ceramic forming material technique with
The compatibling problem of MEMS micro fabrication.
4. a kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip, feature exist as claimed in claim 1
In: four ceramic base voltage sensitive resistors (3) are arranged symmetrically in supporting beam (2) surrounding, can carry out temperature and pressure by difference channel
Compensation promotes the measurement accuracy of shear stress microsensor.
5. a kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip, feature exist as claimed in claim 1
In: the gap (5) between sensing unit (1) surrounding and substrate (6) guarantees quick no more than the characteristic length of minimum flow field structure
Sense unit (1) is concordant with the upper surface of surrounding substrate (6), the disturbance of step stream field is eliminated, using MEMS micro fabrication energy
It is enough to guarantee craft precision well, reduce substantial measurement errors.
6. a kind of ceramic based high-temp-resistant fluid walls face shear stress microsensor chip, feature exist as claimed in claim 1
In: the manufacture of micro-sensor structure uses two panels SOI wafer, and the manufacture of ceramic base voltage sensitive resistor (3) is made pottery using polymer conversion
Ceramic material, two kinds of manufacturing process are completely compatible.The procedure of processing of microsensor chip is as follows:
Step 1: polymer conversion ceramics base voltage sensitive resistor is prepared in SOI wafer 1. device layer；
Sub-step 1.1: the device layer of SOI wafer after cleaning generates insulating layer；
Sub-step 1.2: sputtering and patterned metal lead on the insulating layer in sub-step 1；
Sub-step 1.3: photoetching and graphical PDC varistor on the device layer of the SOI wafer in sub-step 2；
Step 2: microsensor support beam structure is etched in the basal layer of SOI wafer 2.；
Sub-step 2.1: photoetching and graphical supporting beam on SOI wafer basal layer 2.；
Sub-step 2.2: utilizing inductively coupled plasma body (ICP) etching technics, and the basal layer of SOI wafer in sub-step 1 is complete
It is complete to carve thoroughly, form support beam structure；
Step 3: the two panels SOI wafer (1. and 2.) in step 1 and step 2 is bonded；
Sub-step 3.1: being respectively activated two panels SOI wafer, so that its surface forms hydrophilic radical, and utilizes deionization
Water spray makes the device layer surface of chip be covered with water membrane；
Sub-step 3.2: the device layer of the two panels SOI wafer in sub-step 1 is aligned, is then carried out at pre- bonding on bonder
Reason；
Sub-step 3.3: the bonding wafer in sub-step 2 is subjected to high-temperature heat treatment in high pure nitrogen, on the one hand improves bonding
On the other hand intensity is pyrolyzed polymer conversion ceramic forerunner；
Step 4: etching release micro-sensor structure completes chip manufacture；
Sub-step 4.1: photoetching and graphical flexible sheet structure on SOI wafer basal layer 1.；
Sub-step 4.2: basal layer in step 1 is carved thoroughly using ICP etching technics completely, forms flexible sheet；
Sub-step 4.3: photoetching and graphical sensing unit structure on SOI wafer device layer 2.；
Sub-step 4.4: device layer in step 3 is carved thoroughly using ICP etching technics completely, forms sensing unit.
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Cited By (1)
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