CN108964614A - 混频器电路 - Google Patents

混频器电路 Download PDF

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CN108964614A
CN108964614A CN201810715381.XA CN201810715381A CN108964614A CN 108964614 A CN108964614 A CN 108964614A CN 201810715381 A CN201810715381 A CN 201810715381A CN 108964614 A CN108964614 A CN 108964614A
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transistor
drain electrode
connect
grid
stage circuit
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樊璠
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Nantong Chao Xu Environmental Protection Technology Co Ltd
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Nantong Chao Xu Environmental Protection Technology Co Ltd
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Priority to CN201810715381.XA priority Critical patent/CN108964614A/zh
Priority to US16/770,635 priority patent/US10903807B2/en
Priority to PCT/CN2018/101925 priority patent/WO2020000614A1/zh
Priority to DE212018000140.5U priority patent/DE212018000140U1/de
Publication of CN108964614A publication Critical patent/CN108964614A/zh
Priority to ZA2020/03760A priority patent/ZA202003760B/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0202—Channel estimation
    • H04L25/021—Estimation of channel covariance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0019—Gilbert multipliers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0033—Current mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45246—Indexing scheme relating to differential amplifiers the dif amp being biased in the subthreshold region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45362—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45386—Indexing scheme relating to differential amplifiers the AAC comprising one or more coils in the source circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45714—Indexing scheme relating to differential amplifiers the LC comprising a coil as shunt

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  • Computer Networks & Wireless Communication (AREA)
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  • Amplifiers (AREA)
  • Superheterodyne Receivers (AREA)

Abstract

本发明涉及一种混频器电路，包括依次电连接的跨导级电路、开关级电路和负载级电路，跨导级电路用于接入射频电压信号，并将射频电压信号转化为射频电流信号；开关级电路用于接入本振信号和射频电流信号，利用本振信号控制开关级晶体管轮流导通；负载级电路用于将中频电流信号转换成电压信号进行输出。在本发明中跨导级电路采用晶体管叠加技术结构，提高了混频器的转换增益；同时采用源简并电感结构，进一步提高了电路的转换增益和线性度。

Description

混频器电路
技术领域
本发明涉及射频前端集成电路，尤其涉及一种射频前端接收机中的混频器电路。
背景技术
21世纪以来，无线通信技术高速发展，人们对通信设备的需求也越来越高。射频接收机是无线通信的重要模块，它的性能指标影响着整个无线通信系统。其中混频器的设计在射频收发系统中扮演着重要的角色，混频器的性能指标影响着整个射频前端的性能指标，因此提高混频器的性能具有重要的意义。射频接收器上存在的微弱信号首先由低噪声放大器放大，然后传送到混频器。所以在混频器的设计中，需要对转换增益、噪声、线性度、隔离度等性能指标进行综合考虑，对混频器的性能参数进行折中。传统的吉尔伯特混频器电路只能提供一定的转换增益、噪声和线性度，因此，高性能的混频器电路成为当前的研究热点。
发明内容
为了解决上述技术问题，本发明的目的是为了提供一种高增益的混频器电路。
本发明采用的技术方案如下：一种混频器，包括依次电连接的跨导级电路、开关级电路和负载级电路。跨导级电路，其用于接入射频电压信号，将射频电压信号转化为射频电流信号；开关级电路，其用于接入本振信号和射频电流信号，利用本振信号控制开关级晶体管轮流导通，输出中频电流信号；负载级电路，其用于将中频电流信号转换成电压信号进行输出。
跨导级电路包括晶体管M1、晶体管M2、晶体管M3、晶体管M4、电感L1、电感L2、电感L3；晶体管M1的栅极与射频电压信号的正极端RF+连接，晶体管M1的漏极与晶体管M2的漏极连接，晶体管M1的源级与电感L2的一端连接，电感L2的另一端接地；晶体管M2的栅极与晶体管M1的栅极连接，晶体管M2的源级接地。
晶体管M4的栅极与射频电压信号的负极端RF-连接，晶体管M4的漏极与晶体管M3的漏极连接，晶体管M4的源级与电感L3的一端连接，电感L3的另一端接地；晶体管M3的栅极与晶体管M4的栅极连接，晶体管M3的源级接地；电感L1的一端与晶体管M1的漏极连接，另一端与晶体管M4的漏极连接。
开关级电路包括晶体管M5、晶体管M6、晶体管M7、晶体管M8，晶体管M5的栅极与本振信号的正极端LO+连接，晶体管M5的源级与所述晶体管M1的漏极连接，晶体管M5的漏极与所述负载级电路连接；晶体管M6的栅极与本振信号的负极端LO-连接，晶体管M6的源级与晶体管M5的源极连接，晶体管M6的漏极与晶体管M8的漏极连接；晶体管M7的栅极与本振信号的负极端LO-连接，晶体管M7的源级与所述晶体管M4的漏极连接，晶体管M7的漏极与所述晶体管M5的漏极连接；晶体管M8的栅极与本振信号的负极端LO+连接，晶体管M8的源级与所述晶体管M4的漏极连接，晶体管M8的漏极与所述负载级电路连接。
负载级电路包括电阻R1、电阻R2、晶体管M9和晶体管M10；晶体管M9的栅极与晶体管M10的栅极连接，电阻R1的一端与晶体管M9的栅极连接，另一端与晶体管M9的源级连接，晶体管M9的源级与晶体管M5的漏极连接，晶体管M9的漏极接电源电压；电阻R2的一端与晶体管M10的栅极连接，另一端与晶体管M10的源级连接，晶体管M10的源级与晶体管M8的漏极连接，晶体管M10的漏极接电源电压。晶体管M1、M2、M3、M4、M5、M6、M7、M8、M9、M10均为NMOS晶体管。
本发明的有益效果是：在本发明的混频器电路中，跨导级电路采用了晶体管叠加结构，使得跨导级晶体管一个工作在饱和区，另一个工作在亚阈值区，此时两个晶体管的第三阶跨导系数可以相互消除，从而改善了电路的转换增益和线性度；跨导级还采用了源简并电感结构，进一步提高了电路的转换增益和线性度。开关级电路接入了本振信号，采用晶体管在本振大信号的控制下轮流导通，对电流进行切换调制，来实现频率的转换。负载级电路采用有源负载，可以使得混频器电路的转换增益和线性度得到改善，而且还能避免转换增益在高本振功率下降低。本发明的混频器电路中，转换增益较高。
附图说明
图1为本发明混频器的电路原理图；
图2为本发明混频器的转换增益随本振功率变化的仿真图；
图3为本发明混频器的转换增益随输出频率变化的仿真图；
图4为本发明混频器的噪声系数仿真结果图；
图5为本发明混频器的线性度仿真结果图。
具体实施方式
以下结合附图对本发明的原理和特征进行描述，所举实例只用于解释本发明，并非用于限定本发明的范围。
如图1所示，混频器电路包括依次电连接的跨导级电路、开关级电路和负载级电路，跨导级电路采用晶体管叠加结构和源简并电感结构，用于接入射频电压信号，并将射频电压信号转化为射频电流信号，且对射频电流信号进行反复使用；开关级电路用于接入本振信号和射频电流信号，利用本振信号控制开关级晶体管轮流导通；负载级电路用于将中频电流信号转换成电压信号进行输出。
具体的：跨导级电路包括晶体管M1、晶体管M2、晶体管M3、晶体管M4、电感L1、电感L2、电感L3；晶体管M1的栅极与射频电压信号的正极端RF+连接，晶体管M1的漏极与晶体管M2的漏极连接，晶体管M1的源级与电感L2的一端连接，电感L2的另一端接地；晶体管M2的栅极与晶体管M1的栅极连接，晶体管M2的源级接地。
晶体管M4的栅极与射频电压信号的负极端RF-连接，晶体管M4的漏极与晶体管M3的漏极连接，晶体管M4的源级与电感L3的一端连接，电感L3的另一端接地；晶体管M3的栅极与晶体管M4的栅极连接，晶体管M3的源级接地；电感L1的一端与晶体管M1的漏极连接，另一端与晶体管M4的漏极连接。
如图1所示，跨导级使用派生叠加技术结构，通过设置不同的偏置电压将晶体管M1、M4工作在饱和区，M2、M3工作在亚阈值区，可以使得第三阶跨导系数相互消除，提高电路的转换增益和线性度。MOS管M1的电流为：
MOS管M2的电流可以表示为：
上式中，I0表示特征电流。混频器跨导级的总电流为：
从上式可以发现，通过设置不同的直流偏置电压使得跨导级晶体管在不同的区域工作，可以使两个晶体管的第三阶跨导系数互为相反数，此时两个MOS管的第三阶跨导系数相互抵消，电路的转换增益和线性度得到改善。跨导级采用了电感L2、L3用于输入阻抗匹配，还使得电路的线性度得到改善。
具体的：开关级电路包括晶体管M5、晶体管M6、晶体管M7、晶体管M8，晶体管M5的栅极与本振信号的正极端LO+连接，晶体管M5的源级与所述晶体管M1的漏极连接，晶体管M5的漏极与负载级电路连接；晶体管M6的栅极与本振信号的负极端LO-连接，晶体管M6的源级与晶体管M5的源极连接，晶体管M6的漏极与晶体管M8的漏极连接；晶体管M7的栅极与本振信号的负极端LO-连接，晶体管M7的源级与所述晶体管M4的漏极连接，晶体管M7的漏极与晶体管M5的漏极连接；晶体管M8的栅极与本振信号的负极端LO+连接，晶体管M8的源级与晶体管M4的漏极连接，晶体管M8的漏极与所述负载级电路连接。
开关级接入本振信号，采用晶体管在本振大信号的控制下轮流导通，当LO+导通时，晶体管M5和晶体管M8导通，晶体管M6和晶体管M7截止；当LO-导通时，晶体管M6和晶体管M7导通，晶体管M5和晶体管M8截止，以此来对电流进行切换调制，实现频率的转换。
具体的：负载级电路包括电阻R1、电阻R2、晶体管M9和晶体管M10；晶体管M9的栅极与晶体管M10的栅极连接，电阻R1的一端与晶体管M9的栅极连接，另一端与晶体管M9的源级连接，晶体管M9的源级与晶体管M5的漏极连接，晶体管M9的漏极接电源电压；电阻R2的一端与晶体管M10的栅极连接，另一端与晶体管M10的源级连接，晶体管M10的源级与晶体管M8的漏极连接，晶体管M10的漏极接电源电压。晶体管M1、M2、M3、M4、M5、M6、M7、M8、M9、M10均为NMOS晶体管。
本电路的负载级采用有源负载，由于电路存在寄生电容，所以晶体管的尺寸不能太大，否则电路的功耗也会增大。因此，需要适当选择晶体管的尺寸，综合考虑电路的性能参数。有源负载可以提高混频器电路的转换增益和线性度，而且在高本振功率时，还能避免转换增益降低。
如图2所示为本发明的混频器电路的转换增益随本振功率变化的仿真图，从图中可以看出，该混频器的转换增益可以达到23.75dB。
如图3所示为本发明的混频器电路的转换增益随输出频率变化的仿真图，从图中可以看出，该混频器的转换增益为23.9dB。
如图4所示为本发明的混频器电路的噪声系数的仿真图，从图中可以看出，该混频器的噪声系数为11.92dB。
如图5所示为本发明的混频器电路的线性度的仿真图，从图中可以看出，该混频器的线性度为7.2dBm。
综上所述，本发明混频器电路的跨导级采用了晶体管叠加结构，使得跨导级晶体管一个工作在饱和区，另一个工作在亚阈值区，此时两个晶体管的第三阶跨导系数可以相互消除，从而改善了电路的转换增益和线性度；跨导级还采用了源简并电感结构，进一步提高了电路的转换增益和线性度。
本发明采用TSMC 0.18um CMOS工艺参数，在Cadence Spectre中对电路就行仿真，电路的尺寸参数如表1所示。
表1电路的尺寸参数
器件 参数 器件 参数 器件 参数
M1、M4 225u/0.18u M7、M8 40u/0.18u L2、L3 1.5n
M2、M3 225u/0.18u M9、M10 80u/0.18u R1、R2 1K
M5、M6 40u/0.4u L1 1n
本发明的混频器与其他发表的混频器性能进行比较，如表2所示。
表2本发明的混频器与其他电路的性能对比
[1]MIYAMOTO R,GALAL AI A,KANAYA H.Development of UHF to 2.4GHz and5.2GHz dual band up-conversion CMOS mixer[C]//Electronics PackagingTechnology Conference.IEEE,2017:199-202.
[2]Chiou H K,Lin K C,Chen W H,et al.A1-V 5-GHz Self-Bias Folded-Switch Mixer in 90-nm CMOS for WLAN Receiver[J].IEEE Transactions onCircuits&Systems I Regular Papers,2012,59(6):1215-1227.
[3]Jalili H,Fotowat-Ahmady A,Jenabi M.A1-mW current reuse quadratureRF front-end for GPS L1band in 0.18μm CMOS[C]//IEEE International Conferenceon Electronics,Circuits and Systems.IEEE,2012:157-160.
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (4)

1.一种混频器电路，其特征在于，包括依次电连接的跨导级电路、开关级电路和负载级电路；
所述跨导级电路，采用晶体管叠加技术结构和源简并电感结构，其用于接入射频电压信号，将射频电压信号转化为射频电流信号；
所述开关级电路，其用于接入本振信号和射频电流信号，利用本振信号控制开关级晶体管轮流导通，输出中频电流信号；
所述负载级电路，其用于将中频电流信号转换成电压信号输出；
所述跨导级电路包括晶体管M1、晶体管M2、晶体管M3、晶体管M4、电感L1、电感L2、电感L3；所述晶体管M1的栅极与射频电压信号的正极端RF+连接，所述晶体管M1的漏极与晶体管M2的漏极连接，所述晶体管M1的源级与电感L2的一端连接，电感L2的另一端接地；晶体管M2的栅极与晶体管M1的栅极连接，晶体管M2的源级接地；
所述晶体管M4的栅极与射频电压信号的负极端RF-连接，所述晶体管M4的漏极与晶体管M3的漏极连接，所述晶体管M4的源级与电感L3的一端连接，电感L3的另一端接地；晶体管M3的栅极与晶体管M4的栅极连接，晶体管M3的源级接地；所述电感L1的一端与晶体管M1的漏极连接，另一端与晶体管M4的漏极连接。
2.根据权利要求1所述的混频器电路，其特征在于：所述开关级电路包括晶体管M5、晶体管M6、晶体管M7、晶体管M8，所述晶体管M5的栅极与本振信号的正极端LO+连接，所述晶体管M5的源级与所述晶体管M1的漏极连接，所述晶体管M5的漏极与所述负载级电路连接；所述晶体管M6的栅极与本振信号的负极端LO-连接，所述晶体管M6的源级与所述晶体管M5的源极连接，所述晶体管M6的漏极与所述晶体管M8的漏极连接；所述晶体管M7 的栅极与本振信号的负极端LO-连接，所述晶体管M7的源级与所述晶体管M4的漏极连接，所述晶体管M7的漏极与所述晶体管M5的漏极连接；所述晶体管M8的栅极与本振信号的负极端LO+连接，所述晶体管M8的源级与所述晶体管M4的漏极连接，所述晶体管M8的漏极与所述负载级电路连接。
3.根据权利要求2所述的混频器电路，其特征在于，所述负载级电路包括电阻R1、电阻R2、晶体管M9和晶体管M10；所述晶体管M9的栅极与晶体管M10的栅极连接，所述电阻R1的一端与晶体管M9的栅极连接，另一端与晶体管M9的源级连接，晶体管M9的源级与晶体管M5的漏极连接，晶体管M9的漏极接电源电压；所述电阻R2的一端与晶体管M10的栅极连接，另一端与晶体管M10的源级连接，晶体管M10的源级与晶体管M8的漏极连接，晶体管M10的漏极接电源电压。
4.根据权利要求3所述的混频器电路，其特征在于，所述晶体管M1、M2、M3、M4、M5、M6、M7、M8、M9、M10均为NMOS晶体管。
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