CN108962861B - Substrate, preparation method of substrate and power-up method of substrate - Google Patents
Substrate, preparation method of substrate and power-up method of substrate Download PDFInfo
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- CN108962861B CN108962861B CN201810857819.8A CN201810857819A CN108962861B CN 108962861 B CN108962861 B CN 108962861B CN 201810857819 A CN201810857819 A CN 201810857819A CN 108962861 B CN108962861 B CN 108962861B
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- substrate
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- bonding pad
- electric
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- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000003825 pressing Methods 0.000 claims abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- 239000000523 sample Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 3
- 230000007306 turnover Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
Abstract
The invention relates to a substrate, a preparation method of the substrate and a power-up method of the substrate, and belongs to the field of semiconductor testing. The substrate is provided with a fixing part and an electrifying part, the fixing part is provided with a first pad, a second pad is arranged on the electrifying part, an electric connecting wire fixed with the first pad is welded on the second pad in a pressing mode, and the surface area of the electrifying part is larger than that of the fixing part. The invention has the beneficial effects that: the surface area of the substrate can be increased through the design of the power adding part, so that the substrate can be conveniently moved through a sucking device such as a sucking disc, and the turnover efficiency is improved; in addition, due to the fact that the surface area of the substrate is increased, the accuracy requirement of power-on can be reduced, power-on efficiency is improved, and therefore production efficiency is improved.
Description
Technical Field
The invention relates to a substrate, a preparation method of the substrate and a power-up method of the substrate, and belongs to the field of semiconductor testing.
Background
With the widespread use of various internet applications, the interconnection between data centers and networks requires higher and higher data transmission rates and longer transmission distances. The optical module with the advantages is also developed towards higher and higher speed and channel density, the core device laser in the optical module is also developed towards miniaturization, a plurality of pins on a laser chip need to be led out at the same time, and power-up in the process of the technology is realized. The laser is typically eutectic soldered to a substrate having a length, width and height of only about 1mm and requires three pins to be energized. The pitch is so small that only the ProbeCard can realize rapid power-on, but the ProbeCard has high cost, short service life and troublesome maintenance, and is not beneficial to mass production. Therefore, a new substrate is needed to overcome the power-up difficulty and the power-up cost of the prior art.
Disclosure of Invention
The invention aims to provide a substrate which has low requirement on electrification accuracy and is convenient to electrify, a preparation method of the substrate and an electrifying method of the substrate.
In order to achieve the above object, the present invention provides a substrate, which includes a fixing portion and an energizing portion, wherein the fixing portion includes a first pad, the energizing portion includes a second pad, the second pad is pressure-welded with an electrical connection wire fixed to the first pad, and a surface area of the energizing portion is larger than a surface area of the fixing portion.
Further, the substrate has a separation scribe line disposed between the fixed portion and the energized portion.
Furthermore, the substrate is provided with a groove for facilitating the mutual separation of the fixing part and the power-on part.
Further, the first bonding pad and the second bonding pad are both gold-plated pads.
Further, the electric connection wire is a gold wire.
The invention also provides a preparation method of the substrate, which comprises the following steps:
providing a silicon dioxide substrate, and sputtering a first bonding pad and a second bonding pad on the silicon dioxide substrate;
a groove is formed along the separation scribing line so as to divide the silicon dioxide substrate into a fixed part and an electric part, the first pad is positioned on the fixed part, and the second pad is positioned on the electric part;
and welding an electric connection wire on the first bonding pad and the second bonding pad, and bonding a gold wire by using a wire bonding machine so as to electrically connect the first bonding pad and the second bonding pad and further manufacture the substrate.
The invention also provides a power-up method for performing power-up by using the substrate, which comprises the following steps:
providing a device to be powered and an electrical connector;
electrically connecting the equipment to be powered with the first bonding pad of the fixing part of the substrate, and connecting the electric connector with the second bonding pad to form a loop among the equipment to be powered, the first bonding pad, the second bonding pad and the electric connector, so as to complete the power-on of the equipment to be powered;
after the electrification is finished, the electric connector and the substrate are electrically disconnected;
and disconnecting the electric connection wire of the substrate and separating the power-on part of the substrate from the fixed part.
Further, the electric connector is a spring type probe.
Further, the device to be powered is a laser.
The invention has the beneficial effects that: the surface area of the substrate can be increased through the design of the power adding part, so that the substrate can be conveniently moved through a sucking device such as a sucking disc, and the turnover efficiency is improved; in addition, due to the fact that the surface area of the substrate is increased, the accuracy requirement of power-on can be reduced, power-on efficiency is improved, and therefore production efficiency is improved.
In addition, because the area of base plate is big, the precision requirement to add power is lower, can adopt the spring needle to add power, and it is high to add power efficiency, adds the power cost low.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of a substrate according to the present invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Referring to fig. 1, in a preferred embodiment of the present invention, a substrate 1 has a fixing portion 11 and an energizing portion 12, the fixing portion 11 has a first pad 111, the energizing portion 12 is provided with a second pad 121, the second pad 121 is bonded with an electrical connection line 13 fixed to the first pad 11, the surface area of the energizing portion 12 is larger than the surface area of the fixing portion 11, the substrate 1 has a separation scribe line 15 disposed between the fixing portion 11 and the energizing portion 12, the substrate 1 is provided with a groove 14 for facilitating the mutual separation of the fixing portion 11 and the energizing portion 12, the first pad 111 and the second pad 121 are both gold-plated disks, the electrical connection line 13 is a gold wire, and a support plate 3 for supporting the substrate 1 is further disposed below the substrate 1.
The invention also provides a preparation method of the substrate, which comprises the following steps:
providing a silicon dioxide substrate, placing the silicon dioxide substrate on the support plate 3, sputtering a first bonding pad 111 and a second bonding pad 121 on the silicon dioxide substrate, and smoothly carving a separation scribing line 15 on the silicon dioxide substrate;
a groove 14 is arranged along the separation scribing line 15 to divide the circuit board into a fixed part 11 and an electric part 12, and the depth of the groove 14 is not less than half of the thickness of the silicon dioxide substrate;
and welding an electrical connection wire 13 on the first pad 111 and the second pad 121 to electrically connect the first pad 111 and the second pad 121, so as to manufacture the substrate 1, wherein the electrical connection wire 13 is a gold wire which is used for electrically connecting the first pad 111 and the second pad 121 and is welded by a wire bonding machine.
The invention also provides a power-up method for performing power-up by using the substrate, which comprises the following steps:
the method comprises the following steps of providing equipment to be powered and an electric connector 2, wherein the electric connector 2 is a spring type probe, and a power-up part 12 is added on a substrate 1, so that the power-up area is increased, the electric connector 2 with lower precision can be used for power up, and the spring type probe is adopted in the electric connector during specific implementation, so that the cost is low, and the power-up efficiency is high; the equipment to be powered is a laser, the laser is powered by a pin leading-out mode generally, the size of the pin is small, the requirement on the power-on precision is high, the power-on precision requirement can be reduced and the power-on efficiency can be improved by powering on the laser by the substrate 1. (ii) a
Electrically connecting a laser with a first bonding pad 111 of a fixing part 11 of the substrate 1, and connecting the spring-type probe with a second bonding pad 121, so that a loop is formed among equipment to be powered, the first bonding pad 111, the second bonding pad 121 and the spring-type probe, and the power on of the laser is further completed;
after the power-up is completed, the spring type probe is electrically connected with the substrate 1 and cut off, specifically, the spring type probe is separated from the second bonding pad 121, and a loop formed by the equipment to be powered up, the first bonding pad 111, the second bonding pad 121 and the spring type probe is cut off;
the electrical connection wire of the substrate 1 is disconnected, the power-up part 12 of the substrate 1 is separated from the fixing part 11, and the power-up part 12 can be separated from the fixing part 11 only by applying a small force because the substrate 1 is provided with the groove which is convenient for separating the power-up part 12 from the fixing part 11.
The surface area of the substrate 1 can be increased by the design of the power applying part 12 of the substrate 1, so that the substrate 1 can be conveniently moved by a suction device such as a sucker, and the turnover efficiency is improved; in addition, the surface area of the substrate 1 is increased, so that the accuracy requirement of power supply can be reduced, the power supply efficiency is improved, and the production efficiency is improved.
In addition, because the area of the substrate 1 is large, the requirement on the accuracy of power-up is low, the spring type needle can be used for power-up, the power-up efficiency is high, and the power-up cost is low.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. A substrate, characterized by: the substrate is provided with a fixing part and an electrifying part, the fixing part is provided with a first pad, a second pad is arranged on the electrifying part, an electric connecting wire fixed with the first pad is welded on the second pad in a pressing mode, and the surface area of the electrifying part is larger than that of the fixing part; the substrate is provided with a separation scribing line arranged between the fixed part and the power-on part; the base plate is provided with a groove which is convenient for the mutual separation of the fixing part and the power-up part, and the base plate is used for the power supply connector to power up the equipment to be powered up.
2. The substrate of claim 1, wherein: the first bonding pad and the second bonding pad are both gold-plated pads.
3. The substrate of claim 1, wherein: the electric connecting wire is a gold wire.
4. A method of preparing the substrate of claim 1, comprising the steps of:
providing a silicon dioxide substrate, sputtering a first bonding pad and a second bonding pad on the silicon dioxide substrate, and smoothly etching a separation line on the silicon dioxide substrate;
a groove is formed along the separation scribing line so as to divide the silicon dioxide substrate into a fixed part and an electric part, the first pad is positioned on the fixed part, and the second pad is positioned on the electric part;
and welding an electric connection wire on the first bonding pad and the second bonding pad to electrically connect the first bonding pad and the second bonding pad, thereby manufacturing the substrate.
5. A method of powering up a substrate, comprising the steps of:
providing a substrate according to any one of claims 1 to 3;
providing a device to be powered and an electrical connector;
electrically connecting the equipment to be powered with the first bonding pad of the fixing part of the substrate, and connecting the electric connector with the second bonding pad to form a loop among the equipment to be powered, the first bonding pad, the second bonding pad and the electric connector, so as to complete the power-on of the substrate;
after the electrification is finished, the electric connector and the substrate are electrically disconnected;
and disconnecting the electric connection wire of the substrate and separating the power-on part of the substrate from the fixed part.
6. The method of claim 5, wherein: the electric connector is a spring type probe.
7. The method of claim 5, wherein: the equipment to be powered is a laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810857819.8A CN108962861B (en) | 2018-07-31 | 2018-07-31 | Substrate, preparation method of substrate and power-up method of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810857819.8A CN108962861B (en) | 2018-07-31 | 2018-07-31 | Substrate, preparation method of substrate and power-up method of substrate |
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| Publication Number | Publication Date |
|---|---|
| CN108962861A CN108962861A (en) | 2018-12-07 |
| CN108962861B true CN108962861B (en) | 2020-05-01 |
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| CN201810857819.8A Active CN108962861B (en) | 2018-07-31 | 2018-07-31 | Substrate, preparation method of substrate and power-up method of substrate |
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| JP4792726B2 (en) * | 2003-10-30 | 2011-10-12 | 日亜化学工業株式会社 | Manufacturing method of support for semiconductor element |
| CN103197227A (en) * | 2013-03-25 | 2013-07-10 | 西安华芯半导体有限公司 | Wafer testing method used for design analysis purpose |
| US20170263546A1 (en) * | 2014-03-07 | 2017-09-14 | Bridge Semiconductor Corporation | Wiring board with electrical isolator and base board incorporated therein and semiconductor assembly and manufacturing method thereof |
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| CN108962861A (en) | 2018-12-07 |
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Effective date of registration: 20200403 Address after: 243000 Anhui city of Ma'anshan province high tech Zone at 1669 North Road Huo sparkle Building No. 2 Applicant after: Yirui Optoelectronic Technology (Anhui) Co.,Ltd. Applicant after: SUZHOU YIRUI OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 215123 13 301A, North Korea's Nancheng West District, 99 Suzhou Industrial Park, Suzhou, Jiangsu. Applicant before: SUZHOU YIRUI OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240426 Address after: 518000 a1706, Shenzhen national engineering laboratory building, No. 20, Gaoxin South seventh Road, high tech Zone community, Yuehai street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen Yingu Jianke Network Co.,Ltd. Country or region after: China Patentee after: Shenzhen Iridium Semiconductor Technology Co.,Ltd. Address before: 243000 2, 1669 north section of Huo Li Shan Road, Ma'anshan high tech Zone, Anhui Patentee before: Yirui Optoelectronic Technology (Anhui) Co.,Ltd. Country or region before: China Patentee before: SUZHOU YIRUI OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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