CN108962705B - Rectangular double-gate slow wave structure with double electron beam channels - Google Patents
Rectangular double-gate slow wave structure with double electron beam channels Download PDFInfo
- Publication number
- CN108962705B CN108962705B CN201810851322.5A CN201810851322A CN108962705B CN 108962705 B CN108962705 B CN 108962705B CN 201810851322 A CN201810851322 A CN 201810851322A CN 108962705 B CN108962705 B CN 108962705B
- Authority
- CN
- China
- Prior art keywords
- metal
- rows
- row
- double
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
Abstract
The invention discloses a rectangular double-gate slow wave structure with double electron beam channels, which comprises a rectangular waveguide, wherein an upper row and a lower row of metal gate rows are arranged in the rectangular waveguide, the metal gate positions in the upper row and the lower row of metal gate rows correspond to each other one by one, so that a plurality of groups of metal gate pairs corresponding to each other up and down are formed, a row of metal spacer rows are further arranged in the rectangular waveguide at the middle position of the space between the upper row and the lower row of metal gate rows, and the positions of the plurality of groups of metal gate pairs corresponding to each other up and down are staggered with the positions of a plurality. The terahertz wave band-gap laser has the advantages of simple main body structure, two electron beam channels, low high-frequency loss, small reflection, wider cold bandwidth, complete suitability for working in terahertz wave bands, higher working current under the same cathode emission density and capability of improving power output.
Description
Technical Field
The invention relates to the field of slow wave structures, in particular to a rectangular double-gate slow wave structure with double electron beam channels.
Background
Terahertz (THz) wave is an electromagnetic wave with a frequency in the range of 0.1 to 10 THz, and is widely applied to the fields of satellite communication, remote sensing imaging, biomedicine, basic scientific research and the like due to the unique physical properties of the THz wave.
Terahertz sources are the most important part of the field of terahertz scientific research, and are mainly divided into optical-based terahertz sources, plasma-based terahertz sources and electronics-based terahertz sources. At present, for electromagnetic radiation sources requiring high efficiency, compactness, medium and high output power and long operating life, electronics-based vacuum electronic devices are the only practical devices that have relatively small volumes and can operate at ambient temperatures. Traveling wave tubes and return wave tubes are the most commonly used vacuum electronic devices, the working frequency is developed from KHz to THz, and the output power is developed from mW to MW.
The slow wave structure is used as a core structure of the vacuum electronic device, and realizes the interaction of the electron beam and the electromagnetic field, so that the kinetic energy of the electron beam is effectively converted into the high-frequency energy of the electromagnetic wave. Because of the compatibility between the geometric dimension of the slow-wave structure and the working frequency, the geometric dimension of the slow-wave structure is sharply reduced when the working frequency rises; the high-frequency loss of the structure is increased, and the reflection is enhanced. Therefore, the development and research of a novel slow wave structure are particularly important.
The invention aims to provide a rectangular double-gate slow wave structure with double electron beam channels, which aims to solve the problems of high-frequency loss increase and reflection enhancement when the working frequency of the slow wave structure in the prior art rises.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a rectangular double-gate slow wave structure with double electron beam channels comprises a rectangular waveguide, and is characterized in that: an upper row of metal grid rows and a lower row of metal grid rows are arranged in the rectangular waveguide, each row of metal grid rows is formed by arranging a plurality of metal grids with the same number along the electron beam transmission direction, the metal grid positions in the upper row of metal grid rows and the lower row of metal grid rows correspond one to one, so that a plurality of groups of metal grid pairs which correspond up and down are formed, one row of metal spacer rows are further arranged in the rectangular waveguide at the middle position of the space between the upper row of metal grid rows and the lower row of metal grid rows, each metal spacer row is formed by arranging a plurality of metal spacers along the electron beam transmission direction, two electron injection channels with the same height are respectively formed by the metal spacer rows and the space between the upper row of metal grid rows and the lower row of metal grid rows, the positions of the plurality of groups of metal grid pairs which correspond up and down are staggered with the positions of the plurality of metal spacers, the period of the slow wave structure is d1, namely the longitudinal distance between the middle points of, i.e. the longitudinal distance of the offset of the middle point of each metal spacer from the middle point of the metal grid on the adjacent side is d 1/2.
The rectangular double-gate slow wave structure with the double electron beam channels is characterized in that: the metal grids are all rectangular structures with the same size.
The rectangular double-gate slow wave structure with the double electron beam channels is characterized in that: the metal spacers are all rectangular structures with the same size.
The working principle of the invention is as follows:
the two strip-shaped electron beams respectively penetrate through the slow wave structure along the upper electron injection channel and the lower electron injection channel, when the movement speed of the electrons is synchronous with the phase speed of electromagnetic waves in the slow wave structure, the electrons start to gather, the kinetic energy of the electron beams starts to be converted into a high-frequency electromagnetic field, the energy of the high-frequency electromagnetic field is increased, and therefore the power amplification of high-frequency signals is achieved.
The invention has the beneficial effects that:
1. the main body has simple structure and two electron beam channels.
2. The high-frequency loss is low, the reflection is small, and the wide cold bandwidth is realized.
3. The band-shaped electron injection channel is adopted to work, and the terahertz wave band-shaped electron injection channel is completely suitable for working in a terahertz wave band.
4. Two electron injection channels are adopted, so that the working current is higher under the same cathode emission density, and the power output can be improved.
Drawings
FIG. 1 is a schematic diagram of a structure of a vacuum chamber with a slow-wave structure according to the present invention.
FIG. 2 is a cross-sectional view of a 5-cycle slow-wave structure provided by the present invention.
Fig. 3 is a right side view of a 5-cycle slow-wave structure entity provided by the present invention.
FIG. 4 is a graph of dispersion curves for a slow wave structure according to the present invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
As shown in fig. 1-3, a rectangular dual-gate slow wave structure with dual electron beam channels comprises a rectangular waveguide 1, wherein an upper row and a lower row of metal gate rows are arranged in the rectangular waveguide 1, each row of metal gate rows is formed by arranging a plurality of metal gates 2 with the same number along the electron beam transmission direction, the metal gates 2 in the upper row and the lower row of metal gate rows are in one-to-one correspondence, so as to form a plurality of groups of metal gate pairs corresponding up and down, a row of metal spacer rows is further arranged in the rectangular waveguide 1 at the middle position of the space between the upper row and the lower row of metal gate rows, the metal spacer rows are formed by arranging a plurality of metal spacers 3 along the electron beam transmission direction, two electron injection channels 4 with the same height are respectively formed by the metal spacer rows and the space between the upper row and the lower row of metal gate rows, the positions of the plurality of metal gate pairs corresponding up and down are staggered with the positions of the plurality of metal spacers, i.e. the longitudinal distance between the middle points of two adjacent metal grids 2 in each row is d1, the distance of staggering each metal spacer 3 from the metal grid pair on the adjacent side is d1/2, i.e. the longitudinal distance of staggering each metal spacer 3 from the metal grid pair on the adjacent side is d 1/2.
The metal grids 2 are all rectangular structures with the same size.
The metal spacers 3 are all rectangular structures with the same size.
The spacing d2 of each row of adjacent gratings is 0.7 times the period length d1 of the slow wave structure, and the thickness d3 of the metal spacer is 0.3 times the spacing d2 of each row of adjacent gratings.
The specific embodiment is as follows:
the height of the metal grid is h1, the height of the electron injection channel is t, the interval between adjacent metal grids is d2, the height of the metal spacer is h2, and the thickness of the metal spacer is d 3.
The invention is composed of an upper row and a lower row of symmetrical metal grids 2 in a rectangular waveguide 1 and a row of metal spacers 3 positioned between the two rows of metal grids 2. The metal spacer 3 in the center of the channel is staggered with the metal grids 2 in the upper row and the lower row by half period, namely d 1/2.
The following specific dimensions were set: the width w of the slow wave structure is 0.468mm, the depth h1 of the metal grid is 0.23mm, and the height t of the electron beam channel is 0.1 mm. The period d1 of the slow wave structure is 0.240mm, and the spacing d2 of each row of adjacent gratings is 0.7 × d 1. The height h2 of the channel center metal spacer was 0.1mm and the thickness d3 was 0.3 × d 2.
The dispersion curve of the slow-wave structure obtained by calculating the slow-wave structure by using CST software is shown in FIG. 4, wherein the frequency range of the + 1-order spatial harmonic is 320GHz-400 GHz. Through calculation, the normalized phase velocity corresponding to the signal in the frequency range of 336GHz-380GHz is basically stabilized at 0.24C, the working voltage of the electron beam synchronized with the phase velocity is about 15.2Kv, and the working frequency, the bandwidth and the working voltage can be changed by adjusting the structure size.
Claims (3)
1. A rectangular double-gate slow wave structure with double electron beam channels comprises a rectangular waveguide, and is characterized in that: an upper row of metal grid rows and a lower row of metal grid rows are arranged in the rectangular waveguide, each row of metal grid rows is formed by arranging a plurality of metal grids with the same number along the electron beam transmission direction, the metal grid positions in the upper row of metal grid rows and the lower row of metal grid rows correspond one to one, so that a plurality of groups of metal grid pairs which correspond up and down are formed, one row of metal spacer rows are further arranged in the rectangular waveguide at the middle position of the space between the upper row of metal grid rows and the lower row of metal grid rows, each metal spacer row is formed by arranging a plurality of metal spacers along the electron beam transmission direction, two electron injection channels with the same height are respectively formed by the metal spacer rows and the space between the upper row of metal grid rows and the lower row of metal grid rows, the positions of the plurality of groups of metal grid pairs which correspond up and down are staggered with the positions of the plurality of metal spacers, the period of the slow wave structure is d1, namely the longitudinal distance between the middle points of, i.e. the longitudinal distance of the offset of the middle point of each metal spacer from the middle point of the metal grid on the adjacent side is d 1/2.
2. The rectangular double-gate slow-wave structure with the double electron beam channels as claimed in claim 1, wherein: the metal grids are all rectangular structures with the same size.
3. The rectangular double-gate slow-wave structure with the double electron beam channels as claimed in claim 1, wherein: the metal spacers are all rectangular structures with the same size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810851322.5A CN108962705B (en) | 2018-07-30 | 2018-07-30 | Rectangular double-gate slow wave structure with double electron beam channels |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810851322.5A CN108962705B (en) | 2018-07-30 | 2018-07-30 | Rectangular double-gate slow wave structure with double electron beam channels |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108962705A CN108962705A (en) | 2018-12-07 |
| CN108962705B true CN108962705B (en) | 2020-02-14 |
Family
ID=64466095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810851322.5A Active CN108962705B (en) | 2018-07-30 | 2018-07-30 | Rectangular double-gate slow wave structure with double electron beam channels |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108962705B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920712B (en) * | 2019-03-11 | 2020-08-25 | 电子科技大学 | Rectangular groove double-grid slow wave structure |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1068448A (en) * | 1952-12-19 | 1954-06-24 | Csf | Improvements to delay lines of the so-called interdigital type |
| CN103077872B (en) * | 2013-01-16 | 2015-10-28 | 合肥工业大学 | A kind of comb shape slow wave structure of multi-band shape electron beam channel |
| US9202660B2 (en) * | 2013-03-13 | 2015-12-01 | Teledyne Wireless, Llc | Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes |
| CN206864430U (en) * | 2017-06-16 | 2018-01-09 | 中国工程物理研究院应用电子学研究所 | A kind of across wave band controllable slow-wave structure folded form Relativistic backward-wave oscillator of multifrequency |
| CN107968031B (en) * | 2017-11-24 | 2019-12-03 | 电子科技大学 | A kind of bielectron note collapsible row-backward wave amplifier of Terahertz |
| CN108335958B (en) * | 2018-02-07 | 2019-10-29 | 电子科技大学 | A kind of double note slow-wave structures of winding waveguide of photonic crystal load |
| CN108336467B (en) * | 2018-02-07 | 2020-03-17 | 南京邮电大学 | Double-period surface plasmon super-slow wave planar microwave delay line |
-
2018
- 2018-07-30 CN CN201810851322.5A patent/CN108962705B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108962705A (en) | 2018-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108962706B (en) | Medium-staggered double-gate slow wave structure | |
| CN112420469B (en) | Traveling wave tube slow wave structure suitable for high-power work | |
| CN104064422A (en) | Small all-metal slow wave device | |
| CN113113279B (en) | Cosine grid loading sine-like waveguide slow wave structure | |
| CN103632910B (en) | Based on the THz source amplifying device of multiple cascade high-frequency structure | |
| CN114005717B (en) | Multi-electron beam all-metal slow wave structure suitable for traveling wave tube amplifier | |
| CN108962705B (en) | Rectangular double-gate slow wave structure with double electron beam channels | |
| CN102956418B (en) | Slow wave structure of folding frame | |
| CN203536356U (en) | A T-shaped staggered double-gate slow wave device | |
| CN111613502A (en) | Slow wave structure based on plane surface plasmon polariton | |
| CN103632909B (en) | The bielectron note terahertz radiation source of cascade high-frequency structure | |
| CN109920712B (en) | Rectangular groove double-grid slow wave structure | |
| CN110600353B (en) | Parallel coupling slow wave circuit backward wave tube | |
| CN103606504B (en) | A kind of T-shaped is interlocked double grid slow-wave device | |
| CN110335796B (en) | Ribbon electron beam double-groove trapezoidal line coupling cavity slow wave device | |
| CN108831815B (en) | Periodic dielectric medium filled coaxial high-power microwave device | |
| CN110729160B (en) | Double-channel staggered gate slow wave structure | |
| CN111180296A (en) | Broadband extension interaction amplifier circuit | |
| WO2023273906A1 (en) | Slow wave circuit, electromagnetic wave processing method, and related device | |
| CN110416041B (en) | Embedded double-electron-beam terahertz backward wave oscillator | |
| CN113571391A (en) | Metal staggered double-gate slow-wave structure based on elliptic curve | |
| CN110706992B (en) | Double-electron-beam-channel sine waveguide slow wave structure | |
| CN111128646A (en) | Rectangular frame-double-rod slow wave structure | |
| CN114005718B (en) | Connecting rod ladder type symmetrical split ring slow wave structure | |
| US3058025A (en) | Electrostatic focussing devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |