CN108933178A - A kind of electronic synapse device and production method - Google Patents
A kind of electronic synapse device and production method Download PDFInfo
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- CN108933178A CN108933178A CN201810734872.9A CN201810734872A CN108933178A CN 108933178 A CN108933178 A CN 108933178A CN 201810734872 A CN201810734872 A CN 201810734872A CN 108933178 A CN108933178 A CN 108933178A
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- 210000000225 synapse Anatomy 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 40
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 15
- 230000007704 transition Effects 0.000 abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 210000002381 plasma Anatomy 0.000 description 13
- 239000010936 titanium Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000003851 corona treatment Methods 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
It include heavily-doped Si/silicon dioxide substrates, oxide threadiness medium, source electrode and drain electrode the present invention relates to one kind；Heavily-doped Si/the silicon dioxide substrates, heavily-doped Si is as grid；The oxide threadiness medium is set to above heavily-doped Si/silicon dioxide substrates, as conducting channel；The source electrode and drain electrode is respectively arranged at the both ends of oxide threadiness medium, and is formed and be in electrical contact with heavily-doped Si/silicon dioxide substrates.Its resistance adjustment linearity is enhanced after the present invention is plasma treated, the weight for reducing transition process is lost, so that the device is more advantageous to and uses as electronic synapse.
Description
Technical field
The present invention relates to technical field of microelectronic devices, more particularly to a kind of electronic synapse device and production method.
Background technique
For the limitation for breaking through traditional von Neumann structure system, people start to be dedicated to realize on Single Electron device
The analog simulation of cynapse behavior, to obtain the class brain computing chip for having High Density Integration and low-power consumption.Using 1-dimention nano
Wire material makes the reduction that device power consumption is not only contributed to based on the electronic synapse device of three end transistors, also because of device conductance tune
Adjusting range is wide, read-write carries out simultaneously and the advantages such as multichannel input, is conducive to the computing architecture of building neuromorphic.
For Single Electron cynapse device, linear weight adjusting can make the plastic process of entire device be to simplify and can be pre-
It surveys.But the electronic synapse device based on transistor, there are the resistance adjustment linearity is not high, transition process weight is easy to be lost
Feature.Currently, being applied to improve the scheme of electronic synapse device weight tuning linearity to be few.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of electronic synapse device and production method, for electric in improving
Sub- cynapse device weight tuning linearity.
To achieve the above object, the present invention adopts the following technical scheme:
A kind of electronic synapse device, it is characterised in that: including heavily-doped Si silicon dioxide substrates, oxide threadiness medium, source electrode
And drain electrode；Heavily-doped Si/the silicon dioxide substrates, heavily-doped Si is as grid；The oxide threadiness medium is set to heavily doped
Above silicon/silicon dioxide substrate, as conducting channel；The source electrode and drain electrode is respectively arranged at oxide threadiness medium
Both ends, and formed and be in electrical contact with heavily-doped Si/silicon dioxide substrates.
Further, the material of the source electrode and drain electrode is the one of metal, metal alloy or conductive metallic compound
Kind.Metal is Al, Ti, Ta, Cu, Pt, Au, W, Ni or Ag；The metal alloy is Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Cu/
Al, Ti/W or Al/Zr；The conductive compound is TiN, TiW, TaN, WSi, AZO, ITO or FTO；
Further, the oxide includes ZnO, CuO, Cu2O、NiO、Al2O3、TiO2Or MgO.
Further, the electronic synapse device manufacture method, comprising the following steps:
Step S1: plasma treatment is carried out to oxide threadiness medium；
Step S2: by treated, oxide threadiness medium is set to heavily-doped Si/silicon dioxide substrates top；
Step S3: a pair of electrodes is made at oxide both ends, makes electrode and the oxide threadiness medium and heavily-doped Si/titanium dioxide
Silicon substrate forms good contact.
Further, the step S1 specifically:
Step S11: the oxide threadiness medium is placed in chamber, and is evacuated to 0.1Pa or less；
Step S12: being passed through specific gas in the cavity, and keeping chamber pressure is 0.1-100Pa;
Step S13: applying 10 ~ 300W radio-frequency power to chamber makes specific gas plasma, and keeps plasma gas to line
The action time of shape oxide is 1 ~ 3600s.
Further, the specific gas is Ar, O2、NH3、H2、CHF3、CF4、SF6One or more of gas.
Further, the step S3 specifically: the oxide threadiness medium both ends by sputtering, PECVD,
MOCVD, ALD, MBE, PLD or the method for evaporation make a pair of electrodes.
Compared with the prior art, the invention has the following beneficial effects:
The present invention introduces defect by corona treatment medium of oxides in the medium, and transistor is made sluggish behavior occur, from
And the linearity of electronic synapse device weight adjusting is improved, the weight for reducing transition process is lost, so that the plastic process of device is more
Add uniform, simplifying and predictable.In addition to this, plasma-treating technology and current process compatible, less increase at
Device cynapse performance can be improved in the case where this.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention；
Fig. 2 is the transfer characteristic curve of plasma-treated front and back transistor in one embodiment of the invention；
Fig. 3 is transistor not plasma-treated in one embodiment of the invention under unidirectional pulse mode, resistance it is continuous
Adjustment process and its linearity statistical chart；
Fig. 4 is transistor plasma treated in one embodiment of the invention under unidirectional pulse mode, resistance it is continuous
Adjustment process and its linearity statistical chart.
In figure: 01- source electrode, 02- oxide lines, 03- drain electrode, 04- heavily-doped Si/silicon dioxide substrates.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and embodiments.
Fig. 1 is please referred to, the present invention provides a kind of electronic synapse device, it is characterised in that: including heavily-doped Si/silicon dioxide liner
Bottom, oxide threadiness medium, source electrode and drain electrode；Heavily-doped Si/the silicon dioxide substrates, heavily-doped Si is as grid；It is described
Oxide threadiness medium is set to above heavily-doped Si/silicon dioxide substrates, as conducting channel；The source electrode and drain electrode point
It is not set to the both ends of oxide threadiness medium, and is formed and is in electrical contact with heavily-doped Si/silicon dioxide substrates.
In an embodiment of the present invention, the material of the source electrode and drain electrode is metal, metal alloy or conductive metal
One kind of compound.Metal is Al, Ti, Ta, Cu, Pt, Au, W, Ni or Ag；The metal alloy is Pt/Ti, Ti/Ta, Cu/
Ti, Cu/Au, Cu/Al, Ti/W or Al/Zr；The conductive compound is TiN, TiW, TaN, WSi, AZO, ITO or FTO；
In an embodiment of the present invention, further, the oxide includes ZnO, CuO, Cu2O、NiO、Al2O3、TiO2Or
MgO。
In an embodiment of the present invention, the electronic synapse device manufacture method specifically includes the following steps:
Step S1: plasma treatment is carried out to oxide threadiness medium；
Step S2: by treated, oxide threadiness medium is set to heavily-doped Si/silicon dioxide substrates top；
Step S3: a pair of electrodes is made at oxide both ends, makes electrode and the oxide threadiness medium and heavily-doped Si titanium dioxide
Silicon substrate forms good contact.
In an embodiment of the present invention, the step S1 specifically:
Step S11: the oxide threadiness medium is placed in chamber, and is evacuated to 0.1Pa or less；
Step S12: being passed through specific gas in the cavity, and keeping chamber pressure is 0.1-100Pa;
Step S13: applying 10 ~ 300W radio-frequency power to chamber makes specific gas plasma, and keeps plasma gas to line
The action time of shape oxide is 1 ~ 3600s.
In an embodiment of the present invention, the specific gas is Ar, O2、NH3、H2、CHF3、CF4、SF6One of gas
Or it is several.
In an embodiment of the present invention, the step S3 specifically: the oxide threadiness medium both ends by sputtering,
PECVD, MOCVD, ALD, MBE, PLD or the method for evaporation make a pair of electrodes.
In an embodiment of the present invention, the heavily-doped Si of the substrate is p-type or N-type, and corresponding silicon dioxide thickness is
50nm, 100nm or 300nm.
Embodiment 1:
A kind of its structure of electronic synapse device as shown in Figure 1, by heavily-doped Si/silicon dioxide substrates 04, with a thickness of the Ti of 110 nm
As source electrode 01, length be 10 μ m diameters be 100 nm linear zinc oxide as medium 02, make with a thickness of the Ti of 110 nm
For the composition of drain electrode 03.
Plasma bombardment processing is carried out to zinc oxide nanowire, specific production step is as follows:
Firstly, being handled ZnO nano-wire 120 seconds using 100 watts of argon plasmas, then by the ZnO nano-wire after corona treatment
It is sprinkling upon on heavily-doped Si/silicon dioxide substrates, then source-drain electrode is produced on ZnO nano-wire by way of magnetron sputtering.
Electrical testing is carried out to the transistor in the present embodiment, Fig. 2 is the transfer of plasma-treated front and back transistor
Characteristic curve, wherein applying DC voltage sweep in grid when test, drain electrode applies read voltage and source electrode is grounded.Experiment discovery etc.
Gas ions processing can make transistor sluggish behavior occur.Fig. 3 is the conductance without plasma generating device under pulse excitation
(weight) continuously adjusts and adjustment process linearity statistical chart, it is found that the adjustment process is similar in biological neural cynapse and connect
The adjustment process of intensity.Fig. 4 is under pulse excitation, and the weight of plasma treated device continuously adjusts and its adjustment process
Linearity statistical chart.It is found that corona treatment can reduce the β value of device weight enhancing process compared with untreated device,
Enhance weight tuning linearity, this makes the plastic process of entire device be more simplified and predictable.Furthermore it is also possible to
It was found that the device after corona treatment, which enhances/reduce weight, adjusts the weight loss of transition process considerably less than without plasma
The device of body processing, these improvement are conducive to application of the device in terms of electronic synapse.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, is all covered by the present invention.
Claims (6)
1. a kind of electronic synapse device, it is characterised in that: including heavily-doped Si/silicon dioxide substrates, oxide threadiness medium, source electricity
Pole and drain electrode；Heavily-doped Si/the silicon dioxide substrates, heavily-doped Si is as grid；The oxide threadiness medium is set to weight
It mixes above silicon/silicon dioxide substrate, as conducting channel；The source electrode and drain electrode is respectively arranged at oxide threadiness medium
Both ends, and formed and be in electrical contact with heavily-doped Si/silicon dioxide substrates.
2. a kind of electronic synapse device according to claim 1, it is characterised in that: the material of the source electrode and drain electrode
For one kind of metal, metal alloy or conductive metallic compound.
3. a kind of electronic synapse device according to claim 1, it is characterised in that: the oxide include ZnO, CuO,
Cu2O、NiO、Al2O3、TiO2Or MgO.
4. a kind of production method of electronic synapse device according to claim 1, it is characterised in that: the following steps are included:
Step S1: plasma treatment is carried out to oxide threadiness medium；
Step S2: by treated, oxide threadiness medium is set to heavily-doped Si/silicon dioxide substrates top；
Step S3: a pair is made by the method for sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation at oxide both ends
Electrode forms electrode with the oxide threadiness medium and heavily-doped Si/silicon dioxide substrates and well contacts.
5. a kind of production method of electronic synapse device according to claim 4, it is characterised in that: the step S1 is specific
Are as follows:
Step S11: the oxide threadiness medium is placed with chamber, and is evacuated to 0.1Pa or less；
Step S12: being passed through specific gas in the cavity, and keeping chamber Kia is 0.1-100Pa;
Step S13: applying 10 ~ 300W radio-frequency power to chamber makes specific gas plasma, and keeps plasma gas to line
The action time of shape oxide is 1 ~ 3600s.
6. a kind of production method of electronic synapse device according to claim 5, it is characterised in that: the specific gas is
Ar、O2、NH3、H2、CHF3、CF4、SF6One or more of gas.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810734872.9A CN108933178B (en) | 2018-07-06 | 2018-07-06 | Electronic synapse device and manufacturing method thereof |
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| CN201810734872.9A CN108933178B (en) | 2018-07-06 | 2018-07-06 | Electronic synapse device and manufacturing method thereof |
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| CN108933178A true CN108933178A (en) | 2018-12-04 |
| CN108933178B CN108933178B (en) | 2020-11-03 |
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ID=64447377
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920912A (en) * | 2019-03-28 | 2019-06-21 | 江苏师范大学 | A kind of bionical device of multi-functional cynapse and preparation method thereof |
| CN113964221A (en) * | 2021-10-12 | 2022-01-21 | 闽都创新实验室 | Electronic synapse device and manufacturing method thereof |
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| CN106098936A (en) * | 2016-07-26 | 2016-11-09 | 福州大学 | A kind of memristor and the method strengthening its electronic synapse function |
| CN106653850A (en) * | 2016-09-23 | 2017-05-10 | 南京大学 | Artificial nerve synapse transistor based on graphene/carbon nanotube composite absorbing layer |
| CN106910773A (en) * | 2017-02-21 | 2017-06-30 | 南京大学 | Multi-gate Neuron MOS transistor and preparation method thereof and the neutral net for constituting |
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2018
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Patent Citations (4)
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| US20130329499A1 (en) * | 2012-06-09 | 2013-12-12 | Seoul National University R&Db Foundation | Memory cell string based on gated-diode cell and memory array using the same |
| CN106098936A (en) * | 2016-07-26 | 2016-11-09 | 福州大学 | A kind of memristor and the method strengthening its electronic synapse function |
| CN106653850A (en) * | 2016-09-23 | 2017-05-10 | 南京大学 | Artificial nerve synapse transistor based on graphene/carbon nanotube composite absorbing layer |
| CN106910773A (en) * | 2017-02-21 | 2017-06-30 | 南京大学 | Multi-gate Neuron MOS transistor and preparation method thereof and the neutral net for constituting |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109920912A (en) * | 2019-03-28 | 2019-06-21 | 江苏师范大学 | A kind of bionical device of multi-functional cynapse and preparation method thereof |
| CN109920912B (en) * | 2019-03-28 | 2023-02-03 | 江苏师范大学 | Multifunctional synapse bionic device and preparation method thereof |
| CN113964221A (en) * | 2021-10-12 | 2022-01-21 | 闽都创新实验室 | Electronic synapse device and manufacturing method thereof |
| CN113964221B (en) * | 2021-10-12 | 2023-09-05 | 闽都创新实验室 | Electronic synaptic device and its making method |
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