CN108336070A - The manufacturing method of capacitor device structure, capacitor and capacitor - Google Patents
The manufacturing method of capacitor device structure, capacitor and capacitor Download PDFInfo
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- CN108336070A CN108336070A CN201810142622.6A CN201810142622A CN108336070A CN 108336070 A CN108336070 A CN 108336070A CN 201810142622 A CN201810142622 A CN 201810142622A CN 108336070 A CN108336070 A CN 108336070A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
Abstract
The present invention is low for the capacitance density of capacitor in the prior art,The fatigue resistance of device is bad,Repeatedly rear electric property is vulnerable to a kind of capacitor device structure of deficiency offer that destroys and can not restore to continuous bend,The manufacturing method of capacitor and capacitor,This structure includes top electrode structure and bottom electrode structural,Top electrode structure and bottom electrode structural are combined electrode structure,This capacitor,Including capacitor device structure,Top electrode carries out photoetching,Wet etching,Form discrete device array,Using the capacitor device structure of structure of the invention,Significantly reduce the surface resistance of hearth electrode and top electrode,To reduce the high-frequency loss of device,The crack generated during film bends can also be reduced,To effectively improve the bendability characteristics and fatigue resistance of device,Using the transparent capacitor device architecture of structure of the invention,While the capacitor for constructing all-transparent,Significantly reduce the surface resistance and bend performance of electrode.
Description
Technical field
The present invention relates to a kind of capacitor device structure, capacitors, especially transparent capacitor and its manufacturing method.
Background technology
In recent years, transparent flexible electronic device receives more and more attention, for example, bendable transparent display screen, base
In the thin-film solar cells of plastic-substrates and various wearable devices etc..In such devices, transparent flexible electricity
Container plays an important role, such as in the pixel-driving circuit of liquid crystal display (LCD) and organic light-emitting diode display (OLED)
It is middle be used as a kind of charge and discharge electric device, solar cell transparent window as a kind of energy-storage travelling wave tube, in transparent digital circuit
It is middle as basic logic element etc..Traditional plate condenser is the sandwich structure of metal-insulator-metal type, due to gold
The capacitor of the presence of category, this structure is opaque, and being applied in the drive system of display device can significantly reduce
Aperture opening ratio increases system energy consumption, and is unfavorable for realization that all-transparent show it is restricted in the use in transparent electron field,
In addition, that there is also such as capacitance densities is relatively low, antifatigue for this capacitor.Transparent capacitor mostly uses inorganic transparent conduction at present
Film is as substituted metal, and to realize the transparency of capacitor, but inorganic conductive film is easy production under the action of surface stress
Raw crackle, keeps the fatigue resistance of device bad, i.e., continuous bend repeatedly after electric property for example capacitance density, leakage current density,
The performances such as operating frequency range can not be restored by destruction.For this problem, how conductive film is modified, to improve
The fatigue resistance of device will be a significantly thing.Organic macromolecule conducting material is as conductive electrode, at it
It needs to dry during preparation, needs to fall evaporation of the solvent, because of its toxic solvent, so, poison is distributed in the production process
Property.
Invention content
The object of the present invention is to which the capacitance density for being directed to prior art capacitor is low, device fatigue resistance is bad, even
After continuous bending repeatedly electric property be vulnerable to destroy and the deficiency that can not restore provide a kind of capacitor device structure, capacitor and
The manufacturing method of capacitor.
The further object of the present invention is to provide the transparent capacitive that a kind of capacitance density is high, fatigue resistance is good, flexible
Device device architecture and capacitor.
The purpose of the present invention is what is be achieved through the following technical solutions：
A kind of capacitor device structure, including top electrode structure and bottom electrode structural, top electrode structure and bottom electrode structural
Between be provided with dielectric layer, top electrode structure and bottom electrode structural are combined electrode structure, and the combined electrode structure includes
Bottom, top layer and conductor layer, in the bottom surface, top layer is arranged on bottom described in covering leads the conductor layer net distribution
Line layer, bottom and top layer are conductive oxide film, conductor layer and top layer and the equal Ohm connection of bottom；
The k values of dielectric layer are 8-180；
Dielectric layer is Al2O3、Y2O3、ZrO2、TiO2、Ta2O5In one or two layers and two layers or more of composite layer；
The thickness of dielectric layer is 5~50nm；
Bottom and top layer are respectively transparent conductive oxide film, and the conducting wire of the conductor layer is nanoscale flexible wire；
Conducting wire is one or both of carbon nanotube, gold nanowire, nano-silver thread, NANO CRYSTAL COPPER WIRE, nanometer aluminum steel or two
Kind or more mixing, mutual conduction is in integral type between the nano wire；
Transparent conductive oxide film is the laminated film of AZO or ito thin film or the two；
The thickness of conductive oxide film is 5-200nm；
Top layer is deposited on by way of ALD deposition on bottom；
Bottom is deposited on substrate by ALD deposition mode.
A kind of capacitor, including above-mentioned capacitor device structure, top electrode carry out photoetching, wet etching, are formed discrete
Device array.
A kind of manufacturing method of capacitor, capacitor include substrate, hearth electrode, top electrode and dielectric layer 4, hearth electrode setting
On substrate, dielectric layer is arranged between hearth electrode and top electrode, and the capacitor is prepared with the following method：
Bottom one of the conductive oxide film one as hearth electrode is prepared in substrate surface, is arranged on one surface of bottom netted
Flexible nano conducting wire one, the then top layer one in one surface of bottom setting conductive oxide film two as hearth electrode, and conduction
Conducting wire one is fixed on bottom one by sull two, and dielectric layer is arranged on the top layer one of hearth electrode, is set on dielectric layer 4
Bottom two of the conductive oxide film three as top electrode is set, reticulated flexible nm-class conducting wire is set on the bottom two of top electrode
Two, top layer two of the conductive oxide film four as top electrode is set on the bottom two of top electrode, is received flexibility by top layer two
Rice noodles are fixed, are covered in bottom upper surface, and top electrode carries out photoetching, wet etching, forms discrete device array；
Conduction is deposited by the method for one of ALD, magnetron sputtering, pulsed laser deposition, electron beam evaporation in substrate surface
Bottom one of the sull one as hearth electrode passes through ALD, magnetron sputtering, pulsed laser deposition, electronics on one surface of bottom
Top layer one of the method setting conductive oxide film two of one of beam evaporation as hearth electrode, bottom is covered in by the fixation of conducting wire one
On one；It is set by the method for one of ALD, magnetron sputtering, pulsed laser deposition, electron beam evaporation on one surface of top layer of hearth electrode
Set dielectric layer 4；It is arranged by the method for one of ALD, magnetron sputtering, pulsed laser deposition, electron beam evaporation on 4 surface of dielectric layer
Bottom two of the conductive oxide film three as top electrode passes through ALD, magnetron sputtering, pulse on two surface of bottom of top electrode
Top layer two of the method setting conductive oxide film four of one of laser deposition, electron beam evaporation as top electrode；
The bottom one that conductive oxide film one is used as hearth electrode is prepared on substrate by the method for ALD, passes through ALD's
Top layer one of the conductive oxide film two as hearth electrode is arranged in method on bottom one, by the method for ALD on top layer one
Bottom two of the conductive oxide film three as top electrode is set, conductive oxide is arranged on bottom two by the method for ALD
Top layer two of the film four as top electrode；
Flexible nano conducting wire one and the flexible nano conducting wire two can be nano-silver thread, NANO CRYSTAL COPPER WIRE, gold nanowire
Or one of carbon nanotube or two or more mixing；
The K values 8-180 of dielectric layer 4；
Dielectric layer 4 is Al2O3、Y2O3、ZrO2、TiO2、Ta2O5One or more of mixing；
Conductive oxide film is the mixed film of AZO or ito thin film or the two.
Using the capacitor device structure of structure of the invention, due to using combined electrode structure, combined electrode structure by
Bottom, netted conductor layer and top layer Ohm connection composition, bottom and top layer are conductive oxide film, and conductor layer is led for flexibility
Gauze shape is distributed between bottom and top layer, on the one hand the addition of flexible wire significantly reduces the face electricity of hearth electrode and top electrode
Resistance, to reduce the high-frequency loss of device；On the other hand it can reduce the crack generated during film bends, to effectively
Improve the bendability characteristics and fatigue resistance of device.
Prohibited with width using transparent conductive film come substituted metal using the transparent capacitor device architecture of structure of the invention
High-k (k) material of band uses nm-class conducting wire as conductor layer, in the capacitor for constructing all-transparent as dielectric layer 4
While, the surface resistance and bend performance of electrode are significantly reduced, 1000 guarantors are bent under 5-7mm tensile stress radiuses
Hold that electric property is good, the surface resistance of combination electrode can be reduced to 20 ohm or less.
Description of the drawings
Fig. 1：Atomic force microscope (AFM) photo of PEN frostings.
Fig. 2：The surfaces corona treatment PEN of oxygen, after depositing on PEN one layer of AZO film with ALD methods
AFM (atomic force microscope) photo.
Fig. 3：What is prepared on the basis of Fig. 2 is provided with the AZO/AgNW/AZO combination electrodes of nano silver wire (AgNW)
AFM photos.
Fig. 4：With AFM of the method for magnetron sputtering after depositing one layer of AZO film without the surfaces PEN of any processing
Photo.
Fig. 5：With the AFM photos after ALD methods one layer of AZO film of deposition on the basis of Fig. 4.
Fig. 6：What is prepared on the basis of Fig. 4 mixes the AFM photos of the AZO/AgNW/AZO combination electrodes of nano silver wire.
Fig. 7：Based on AZO electrode capacitors and electricity of the AZO//AgNW/AZO combination electrodes capacitor under 0V Dc biases
Hold density relational graph with frequency change.
Fig. 8：AZO electrode capacitors and AZO/AgNW/AZO combination electrodes capacitor are respectively under 7mm tensile stress radiuses
Leakage current density-voltage (I-V) relational graph.Wherein, (a) is AZO electrode capacitors release conditions after not curved, bending, bending
Under I-V relational graphs, (b) be I- of the AZO/AgNW/AZO combination electrodes capacitor after not curved, bending, bending under release conditions
V relational graphs (c) are I-V relational graphs after AZO electrode capacitors continuous bend 100 times, 200 times, (d) are AZO/AgNW/
AZO combination electrode capacitors continuous bend 200, the I-V relational graphs after 400,600,800,1000 times；
Fig. 9 is capacitor devices example structure schematic diagram of the present invention.
Reference sign
1- bottoms；2- conductor layers；3- top layers；4- dielectric layers；5- substrates；11- top electrodes structure 11；12- bottom electrode structurals
12；
Specific implementation mode
The present invention is further described with reference to specific embodiment：
Present invention preferably employs following capacitor device structures：
As shown in figure 9, including bottom electrode structural 12 and top electrode structure 11, in bottom electrode structural 12 and top electrode structure 11
Between dielectric layer 4 is set, dielectric layer 4 is preferably that the material of high-k is also referred to as high-g value, its more preferable k value is 8-180,
High-k material layer is preferably Al2O3、Y2O3、ZrO2、TiO2、Ta2O5In one or two layers or two layers or more of composite layer.Hearth electrode
Structure 12 and top electrode structure 11 are referred to as electrode structure, are all made of combined electrode structure.Combined electrode structure include bottom 1,
The conductor layer 2 that is arranged on bottom and the top layer 3 being fixed on conductor layer on bottom is set on bottom.Bottom and top layer are
Conductive film preferably uses transparent oxide conductive film, the oxide electroconductive film preferably adulterated, doping that can improve oxygen
The carrier concentration of compound itself makes sull surface resistance be greatly lowered, and conducting wire can be plain conductor, can also be
Nonmetallic conducting wire, such as carbon fibre, carbon nanocoils, plain conductor and nonmetallic conducting wire are both needed to have good ductility, this
Sample can improve the ductility and flexibility of electrode, conducting wire can random grid be distributed in formation conductor layer 2, conducting wire and bottom on bottom
Layer Ohm connection, is electrically connected between each conducting wire, can be connected with each other integral, and it is interlaced that can also be, it is ensured that capacitor
Translucency and electric conductivity, conducting wire can be micron-sized, and conducting wire is preferably metal nanometer line or carbon nanotube, and more preferably silver is received
Rice noodles, copper nano-wire, aluminium nano wire, nanowires of gold etc., not only ductility is excellent for these conducting wires, and has good economy
Energy.It is advantageous in that using nano level conducting wire：After film surface is laid with nm-class conducting wire, sky can be formed between nm-class conducting wire
Gap, gap light transmission, nano wire mutually overlaps the region for forming light transmission with nano wire, when bottom and top layer are transparent conductive film
When can get transparent combined electrode structure, and when due to spacing very little between nano wire and nano wire can also light transmission,
Conductive uniformity is good, can get that translucency is good and the conductive good flexible transparent combined electrode structure of uniformity.In conductive film
Upper setting nm-class conducting wire, can significantly reduce the surface resistance of conductive film, therefore, the electric property of conductive film can be improved.This hair
In bright, top layer covering conducting wire, top layer and bottom one are provided in order to improve the bonding tightness between conducting wire and bottom on bottom
Sample is all made of oxide electroconductive film, Ohm connection between conducting wire and top layer, and conducting wire is fixed on bottom by top layer.The bottom of at
Layer on top layer is set, conducting wire can be fixed on bottom, improve the connection relation between conducting wire and conducting wire, by original conducting wire with
Line between conducting wire connects the connection of the connection, face and face that become line and face, is effectively improved the electric conductivity of electrode, has
Effect reduces the surface resistance of electrode.Such as when being all made of AZO or ito thin film for nanoscale conducting wire and bottom and top layer, due to conducting wire
Very carefully, translucency is good, and bottom and top layer are transparent conductive film, therefore transparent combined electrode structure can be obtained, thoroughly
The big density size for neglecting conducting wire of the light transmittance of bright combined electrode structure and it is different, when diameter of wire is identical, density is smaller, thoroughly
Light rate is higher, the better but electric conductivity of the transparency can specific density it is high want low, therefore need to be selected in translucency and electric conductivity.
Preferably, bottom is deposited by the method for ALD, and top layer is deposited on by the method for ALD on bottom and conductor layer, by conducting wire
It is wrapped on bottom.Since Atomic layer deposition method is a kind of plating that can be by film in the form of monoatomic layer in layer
It is unique so that ALD technique is become currently the only and is received in complicated from limitation depositional model in the method for substrate surface
Deposition thickness controllable precise, the method with high shape-retaining ability film in rice structure, thus it is conductive using the bottom that ALD deposition obtains
Film and top layer conductive film can to greatest extent live wrapped in wire, make between conducting wire and bottom conductive film, top layer layer is led
Line contact between conductive film becomes face contact, forms the structure of package, and the contact between conducting wire and conductive film is abundant, connection is firm
Gu forming the uniform composite conductive thin film of electric property, the surface resistance of electrode can be greatly reduced, to reduce the height of device
Frequency is lost；The size that film bends generate crack in the process can be reduced simultaneously, to effectively improve the bendability characteristics of device
And fatigue resistance.Due to being provided with the good conducting wire of ductility on conductive film or between conductive film, conducting wire forms
The skeleton structure of film, it is thus possible to improve the flexibility of film, greatlys improve its anti-fatigue performance.
Use transparent composite conductive thin film as transparent combined electrode structure, dielectric layer 4 for Al2O3、Y2O3、ZrO2、
TiO2、Ta2O5In one or two layers or when two layers or more of composite layer, flexible and transparent can be obtained when using nm-class conducting wire in conducting wire
Capacitor device structure.
Below for preparing transparent flexible conductive film in plastic supporting base to the present invention prepare the method for capacitor into
Row detailed description.
(1) with either physically or chemically being pre-processed to substrate surface, the hydrophily of substrate surface is improved：
Physical method：With the methods of magnetron sputtering, pulsed laser deposition, electron beam evaporation one layer of oxygen is deposited in substrate surface
Compound conductive film, the oxide electroconductive film are preferably AZO or ITO conductive films；It can also be common oxide conducting
Film.It is preferred that the thickness of conductive film is 5~200nm, preferred treatment temperature is 20~150 DEG C；
Chemical method：Use O2Or N2Plasma substrate surface is pre-processed；Preferred treatment temperature is 20~
It 150 DEG C, is surface-treated 5~15 minutes；
(2) it is prepared as follows out transparent flexible capacitor on by step (1) treated hydrophilic substrate
Structure：
(a) method for using ALD prepares AZO or ITO conductive films as bottom in hydrophilic substrate；The thickness of conductive film
Degree is preferably 5~200nm.
(b) metal nanometer line or carbon nanotube are laid on bottom surface；The method of spin coating or other methods may be used
Metal nanometer line and carbon nanotube are arranged on the oxide electroconductive film as bottom；When spin coating, spin coating rotating speed can be used
2500-4000 revolutions per seconds of speed, dispersion liquid concentration is preferably 1~10mg/mL at this time；
(c) with the method for ALD, the surface of bottom obtained by step (b) continues to deposit AZO or ito thin film, makees to be formed
For the conductive film of electrode top layer, to obtain combined electrode structure.The thickness of top layer conductive film is preferably 5~200nm.Bottom
Layer membrane materials may be used identical with top film material, can also use different；
(d) combined electrode structure obtained by step (c) deposits one layer of high-g value work as hearth electrode on hearth electrode
For dielectric layer 4；4 thickness of dielectric layer is preferably 5~50nm；
(e) again by step (a), (b), (c) method deposited respectively on dielectric layer 4 bottom of top electrode, conductor layer and
Top layer, to obtain transparent flexible capacitor device structure.
(3) top electrode of the capacitor device structure prepared to step (2) carries out photoetching, and wet etching is formed discrete
Device array is to get transparent flexible capacitor or capacitor devices.Individual devices are preferably sized to 100 μm of 100 μ m.
In the above-mentioned methods can not also hydrophily processing be carried out to substrate.Due to by carrying out physics to plastic supporting base surface
Or the pretreatment of chemical method, the hydrophily of frosting can be significantly improved, to lay the first stone for the deposition of follow-up ALD.
Therefore when preparing conductive film on substrate using the method for ALD, hydrophilic treated is preferably carried out.Certainly other materials can also be used
The substrate of matter, the material of substrate will take into account the treatment temperature of ALD.
Commonsense method can also be used as used the methods of magnetron sputtering, pulsed laser deposition, electron beam evaporation at substrate, bottom
On layer prepare oxide electroconductive film, but oxide electroconductive film coated wire layer, reason are prepared preferably with the method for ALD
Be the material with high length-diameter ratio for nano wire etc, with the technology deposition film of ALD by its it is fully wrapped around live be most
Good method, because ALD uniquenesses are with the depositional model of type so that cladding of all conductive films on nm-class conducting wire is not appointed
What dead angle, and the thickness for being wrapped by the oxide electroconductive film of surface everywhere is highly consistent, and this is magnetron sputtering, pulse laser
The technologies such as deposition (PLD), electron beam evaporation are unrivaled, and leader usually there will be the dead of film deposition for these technical methods
Angle so that nm-class conducting wire cannot completely be enveloped by oxide electroconductive film.
Preferably, the thickness of hearth electrode is 20~400nm in step (2), and the thickness of dielectric layer 4 is 5~50nm, top electrode
Thickness be 20~400nm.The thickness of hearth electrode and top electrode does not include the thickness of conductor layer.
Transparent capacitor device architecture is preferably prepared using atomic layer deposition (ALD) method in the present invention.This method can incite somebody to action
High-g value and the transparent conductive film in-situ deposition in the same reaction chamber, to obtain 4 boundary of electrode-dielectric layer of high quality
Face.The technological temperature of ALD is very low, is very suitable for deposition film on the plastic substrate.In order to improve the antifatigue of capacitor devices
Characteristic mixes carbon nanotube (CNT), the electric conductivity such as metal nanometer line and all good material of flexibility in inorganic thin film, makes
Powerful reinforced concrete structure.Due to nano wire or the reinforcement effect of nanotube, the crackle that device is generated due to alternating bending
Scale is obviously reduced, and electric property is easy to restore.Certainly, conducting wire can be micron-sized, only the transparency and electric conductivity with receive
The conducting wire of meter level is a little compared to inequality, and conductive film can also be nontransparent, and conducting wire is arranged on nontransparent conductive film
Purpose is to obtain the combination electrode of low areal resistance to reduce the surface resistance of electrode.Conducting wire can also be nanoscale conducting wire, micron
The mixing conducting wire of grade conducting wire.Conducting wire in net distribution on conductive film, that is, the interlaced mutual overlap joint of each conducting wire, mutually
Conductively it is interleaved together.Using the capacitor device structure of structure of the invention, capacitor can be made to obtain high capacitance,
Capacitance density is up to 10-14fF/ μm2, therefore, this capacitor can work under small voltage, can be when it is applied to display
Energy consumption can be effectively reduced while the chroma-luminance for ensureing single pixel；In addition, the capacitor of structure of the invention, leakage current
Density is low, up to 10-10-10-7A/cm2, capacitor can maintain constant polar plate voltage more to single pixel in a closed condition
For a long time.In preferred embodiments of the present invention, conductive film uses ZnO or ITO, can significantly reduce the resistance of electrode, Ke Yiyou
Effect reduces the loss of capacitor.The capacitor application of the present invention can improve opening for screen entirety in transparent pixels driving circuit
Mouth rate, advantageously reduces energy consumption.
When forming bottom conductive film and top layer conductive film using the method for ALD, the invention has the advantages that and
Effect：
(1) ALD technique is used to realize the in-situ deposition at electrode for capacitors-dielectric layer 4 interface, the device prepared be not necessary to through
It crosses any subsequent processing and possesses excellent electric property.Meanwhile in situ deposition method is well suited for large-scale industrial production.
(2) transparent conductive film is wrapped in all very excellent carbon nanometer of electric conductivity and mechanical performance with the method for ALD
On the flexible nanos conducting wire such as pipe, nano silver wire, copper nano-wire, nanowires of gold, formation intensity is very high, the good reinforcing bar of ductility is mixed
Xtah Crude Clay structure can also effectively improve flexible and the fatigue resistance of film while reducing film surface resistance, it
The resistivity of resistance low three orders of magnitude compared with the conductive film that non-ald is formed.
Embodiment 1
At 20 DEG C, O is used2Plasma pre-processes frosting.At 150 DEG C, deposited with the method for ALD
AZO conductive films are laid with nm-class conducting wire as bottom, then with the method for spin coating on bottom, then with the method for ALD on bottom
It deposits AZO conductive films and covers conductor layer, the AZO/AgNW/AZO laminated films of one layer of 100nm thickness are made as hearth electrode,
At 150 DEG C, the ZrO of one layer of 10nm thickness is deposited on hearth electrode2(k values are about 22) film is as dielectric layer 4, at 150 DEG C,
The method that ALD is used on dielectric layer 4 deposits AZO conductive films as bottom, then is laid with nanometer on bottom with the method for spin coating and leads
Line, then deposit AZO conductive films on bottom with the method for ALD and cover conductor layer, the AZO/AgNW/ of one layer of 100nm thickness is made
AZO laminated films are as top electrode.Photoetching, wet etching are carried out to top electrode, form device one by one, individual devices size
Preferably 100 μm of 100 μ m.
Embodiment 2
For the ease of narration, following method is referred to as ALD and is put english the method for painting：Conductive film is deposited with the method for ALD
It is laid with nm-class conducting wire on bottom as bottom, then with the method for spin coating, then conductive film is deposited on bottom with the method for ALD
Cover conductor layer.
At 80 DEG C, O is used2Plasma frosting is pre-processed, at 100 DEG C, the side for painting of being put english with ALD
Method prepares the AZO/CNT/AZO laminated films of one layer of 60nm thickness as hearth electrode, and at 100 DEG C, one layer is deposited on hearth electrode
The ZrO of 10nm thickness2(k values are about 22) film is as dielectric layer 4.At 100 DEG C, the method for painting of being put english with ALD on dielectric layer 4
The AZO/CNT/AZO laminated films of one layer of 60nm thickness are prepared as top electrode, photoetching, wet etching are carried out to top electrode, formed
Device one by one, individual devices are preferably sized to 100 μm of 100 μ m.
Embodiment 3
At 20 DEG C, the AZO films of one layer of 20nm thickness are deposited on the surfaces PEN with the method for magnetron sputtering, at 80 DEG C, are used
The put english methods of painting of ALD prepare the AZO/AgNW/AZO laminated films of one layer of 80nm thickness as hearth electrode, electric the bottom of at 80 DEG C
The extremely TiO of one layer of 20nm thickness of upper deposition2(k values are about 80) film is as dielectric layer 4, and at 80 DEG C, ALD is used on dielectric layer 4
The method of painting of putting english prepares the AZO/AgNW/AZO laminated films of one layer of 80nm thickness as top electrode, to top electrode progress photoetching,
Wet etching, forms device one by one, and individual devices are preferably sized to 100 μm of 100 μ m.
Embodiment 4
At 80 DEG C, the AZO films of one layer of 100nm thickness are deposited on the surfaces PEN with the method for magnetron sputtering, at 125 DEG C,
Use ALD put english painting method prepare one layer of 200nm thickness AZO/CuNW/AZO laminated films as hearth electrode, at 125 DEG C,
The HfO of one layer of 20nm thickness is deposited on hearth electrode2(k values are about 25) film is as dielectric layer 4, at 125 DEG C, on dielectric layer 4
The put english methods of painting of ALD are used to prepare the AZO/CuNW/AZO laminated films of one layer of 200nm thickness as top electrode, to top electrode progress
Photoetching, wet etching, form device one by one, and individual devices are preferably sized to 100 μm of 100 μ m.
Embodiment 5
At 100 DEG C, the ito thin film of one layer of 20nm thickness is deposited on the surfaces PEN with the method for magnetron sputtering.At 150 DEG C,
The put english methods of painting of ALD are used to prepare the ITO/AgNW laminated films of one layer of 150nm thickness as hearth electrode, it is electric the bottom of at 150 DEG C
The extremely TiO of one layer of 20nm thickness of upper deposition2/HfO2(k values are about 40) laminated film is as dielectric layer 4.At 150 DEG C, in dielectric layer
Used on 4 ALD put english painting method prepare one layer of 150nm thickness ITO/AgNW/ITO laminated films as top electrode, to top electrode
Photoetching, wet etching are carried out, forms device one by one, individual devices are preferably sized to 100 μm of 100 μ m.
Embodiment 6
At 100 DEG C, N is used2Plasma frosting is pre-processed, at 150 DEG C, put english painting with ALD
The ITO/CNT/ITO laminated films that method prepares one layer of 60nm thickness deposit one at 150 DEG C as hearth electrode on hearth electrode
The TiO of layer 10nm thickness2/ZrO2(k values are about 40) film is as dielectric layer 4, at 150 DEG C, is put english painting with ALD on dielectric layer 4
Method prepare one layer of 60nm thickness ITO/CNT/ITO laminated films be used as top electrode, to top electrode progress photoetching, wet method corruption
Erosion, forms device one by one, individual devices are preferably sized to 100 μm of 100 μ m.
Embodiment 7
At 150 DEG C, the AZO films of one layer of 20nm thickness are deposited on the surfaces PEN with the method for magnetron sputtering, at 125 DEG C,
The put english methods of painting of ALD are used to prepare the AZO/CNT laminated films of one layer of 100nm thickness as hearth electrode, it is electric the bottom of at 125 DEG C
The extremely TiO of one layer of 20nm thickness of upper deposition2/Y2O3(k values are about 30) film is as dielectric layer 4, at 125 DEG C, on dielectric layer 4
The put english methods of painting of ALD are used to prepare the AZO/CNT/AZO laminated films of one layer of 100nm thickness as top electrode, to top electrode progress
Photoetching, wet etching, form device one by one, and individual devices are preferably sized to 100 μm of 100 μ m.
Embodiment 8
At 150 DEG C, frosting is pre-processed with the plasma of N2.At 80 DEG C, the side for painting of being put english with ALD
Method prepares the AZO/AgNW/AZO laminated films of one layer of 60nm thickness as hearth electrode, and at 80 DEG C, one layer is deposited on hearth electrode
The ZrO of 20nm thickness2(k values are about 22) film is as dielectric layer 4, at 80 DEG C, the method for painting of being put english with ALD on dielectric layer 4
The AZO/AgNW/AZO laminated films of one layer of 60nm thickness are prepared as top electrode, photoetching, wet etching are carried out to top electrode, formed
Device one by one, individual devices are preferably sized to 100 μm of 100 μ m.
Table 1：Capacitor embodiment electric property table of the present invention, its bottom of listed embodiment in table, top layer conductive film
For thickness in 5~200nm, the thickness of dielectric layer is 5~50nm.
Claims (18)
1. a kind of capacitor device structure, including top electrode structure (11) and bottom electrode structural (12), top electrode structure (11) and
Dielectric layer (4) is provided between bottom electrode structural (12), which is characterized in that the top electrode structure (11) and bottom electrode structural (12)
It is combined electrode structure, the combined electrode structure includes bottom, top layer and conductor layer, and the conductor layer net distribution exists
The bottom surface, top layer setting cover the conductor layer on bottom, and bottom and top layer are conductive oxide film, conducting wire
Layer and top layer and the equal Ohm connection of bottom.
2. capacitor device structure as described in claim 1, it is characterised in that：The k values of the dielectric layer (4) are 8-180.
3. capacitor device structure as claimed in claim 2, it is characterised in that：Dielectric layer (4) is Al2O3、Y2O3、ZrO2、
TiO2、Ta2O5In one or two layers and two layers or more of composite layer.
4. the capacitor device structure as described in one of claim 1-3 items, it is characterised in that：The thickness of the dielectric layer (4)
Degree is 5~50nm.
5. capacitor device structure as claimed in claim 2, which is characterized in that bottom and top layer are respectively transparent conductive oxide
The conducting wire of object film, the conductor layer is nanoscale flexible wire.
6. capacitor device structure as claimed in claim 5, it is characterised in that：The conducting wire be carbon nanotube, gold nanowire,
One or both of nano-silver thread, NANO CRYSTAL COPPER WIRE, nanometer aluminum steel or two or more mixing, mutual conduction between the nano wire
In integral type.
7. capacitor device structure as claimed in claim 5, which is characterized in that the transparent conductive oxide film is AZO
Or the laminated film of ito thin film or the two.
8. capacitor device structure as described in claim 1, which is characterized in that the thickness of the conductive oxide film is 5-
200nm。
9. capacitor device structure as described in claim 1, which is characterized in that the top layer is by way of ALD deposition
It is deposited on bottom.
10. the capacitor device structure as described in claim 1 or 9, which is characterized in that the bottom passes through ALD deposition side
Formula is deposited on substrate.
11. a kind of capacitor, it is characterised in that：Including the capacitor device structure described in one of claim 1-10 items, top
Electrode carries out photoetching, wet etching, forms discrete device array.
12. a kind of manufacturing method of capacitor, the capacitor includes substrate, hearth electrode, top electrode and dielectric layer 4, hearth electrode
On substrate, dielectric layer (4) is arranged between hearth electrode and top electrode for setting, it is characterised in that：It is prepared with the following method
The capacitor：
Bottom one of the conductive oxide film one as hearth electrode is prepared in substrate surface, reticulated flexible is set on one surface of bottom
Nm-class conducting wire one, the then top layer one in one surface of bottom setting conductive oxide film two as hearth electrode, and electric conductive oxidation
Conducting wire one is fixed on bottom one by object film two, and dielectric layer (4) is arranged on the top layer one of hearth electrode, is set on dielectric layer 4
Bottom two of the conductive oxide film three as top electrode is set, reticulated flexible nm-class conducting wire is set on the bottom two of top electrode
Two, top layer two of the conductive oxide film four as top electrode is set on the bottom two of top electrode, is received flexibility by top layer two
Rice noodles are fixed, are covered in bottom upper surface, and top electrode carries out photoetching, wet etching, forms discrete device array.
13. the manufacturing method of capacitor as claimed in claim 12, it is characterised in that：It is splashed by ALD, magnetic control in substrate surface
It penetrates, bottom one of the method conductive oxide film one of one of pulsed laser deposition, electron beam evaporation as hearth electrode,
One surface of bottom is thin by the method setting conductive oxide of one of ALD, magnetron sputtering, pulsed laser deposition, electron beam evaporation
The fixation of conducting wire one is covered on bottom one by top layer one of the film two as hearth electrode；Pass through on one surface of top layer of hearth electrode
Dielectric layer 4 is arranged in the method for one of ALD, magnetron sputtering, pulsed laser deposition, electron beam evaporation；Pass through on 4 surface of dielectric layer
The method setting conductive oxide film three of one of ALD, magnetron sputtering, pulsed laser deposition, electron beam evaporation is used as top electrode
Bottom two, in the side that two surface of bottom of top electrode passes through one of ALD, magnetron sputtering, pulsed laser deposition, electron beam evaporation
Top layer two of the conductive oxide film four as top electrode is arranged in method.
14. the manufacturing method of capacitor as claimed in claim 12, it is characterised in that：It is made on substrate by the method for ALD
It is thin that conductive oxide is arranged on bottom one by the method for ALD for standby bottom one of the conductive oxide film one as hearth electrode
Top layer one of the film two as hearth electrode is arranged conductive oxide film three on top layer one by the method for ALD and is used as top electrode
Bottom two, the top layer two that conductive oxide film four is used as top electrode is set by the method for ALD on bottom two.
15. the manufacturing method of capacitor as claimed in claim 12, it is characterised in that：The flexible nano conducting wire one and institute
The flexible nano conducting wire two stated can be one of nano-silver thread, NANO CRYSTAL COPPER WIRE, gold nanowire or carbon nanotube or two kinds or two kinds
Above mixing.
16. the manufacturing method of capacitor as claimed in claim 12, it is characterised in that：The K values 8-180 of the dielectric layer 4.
17. the manufacturing method of capacitor as claimed in claim 12, it is characterised in that：The dielectric layer 4 is Al2O3、Y2O3、
ZrO2、TiO2、Ta2O5One or more of mixing.
18. the manufacturing method of the capacitor as described in one of claim 12 items, it is characterised in that：The conductive oxide
Film is the mixed film of AZO or ito thin film or the two.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545553A (en) * | 2018-10-31 | 2019-03-29 | 武汉大学 | A kind of preparation method of the transparent flexible capacitor of high-quality-factor |
| CN110853800A (en) * | 2018-08-20 | 2020-02-28 | 郭明智 | Composite conductive material |
| CN111739736A (en) * | 2020-06-29 | 2020-10-02 | 陕西理工大学 | Flexible thin film capacitor with high energy storage density and preparation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681632A (en) * | 2012-09-19 | 2014-03-26 | 三星显示有限公司 | Capacitor and organic light emitting diode display including same |
| CN103730194A (en) * | 2013-12-13 | 2014-04-16 | 中国科学院宁波材料技术与工程研究所 | Multilayer structure composite transparent conducting thin film based on silver nanowires and preparation method thereof |
| CN103730195A (en) * | 2013-12-13 | 2014-04-16 | 中国科学院宁波材料技术与工程研究所 | Composite transparent conducting thin film of copper-nanowire-based multi-layer structure and manufacturing method of composite transparent conducting thin film of copper-nanowire-based multi-layer structure |
| US20140145139A1 (en) * | 2011-07-13 | 2014-05-29 | Ru Huang | Transparent flexible resistive memory and fabrication method thereof |
| WO2017030352A1 (en) * | 2015-08-18 | 2017-02-23 | 고려대학교 산학협력단 | Flexible transparent electrode having azo/ag/azo multilayered thin film structure, and manufacturing method therefor |
| CN208225875U (en) * | 2018-02-11 | 2018-12-11 | 无锡博硕珈睿科技有限公司 | Capacitor device structure and capacitor with combination electrode |
-
2018
- 2018-02-11 CN CN201810142622.6A patent/CN108336070A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140145139A1 (en) * | 2011-07-13 | 2014-05-29 | Ru Huang | Transparent flexible resistive memory and fabrication method thereof |
| CN103681632A (en) * | 2012-09-19 | 2014-03-26 | 三星显示有限公司 | Capacitor and organic light emitting diode display including same |
| CN103730194A (en) * | 2013-12-13 | 2014-04-16 | 中国科学院宁波材料技术与工程研究所 | Multilayer structure composite transparent conducting thin film based on silver nanowires and preparation method thereof |
| CN103730195A (en) * | 2013-12-13 | 2014-04-16 | 中国科学院宁波材料技术与工程研究所 | Composite transparent conducting thin film of copper-nanowire-based multi-layer structure and manufacturing method of composite transparent conducting thin film of copper-nanowire-based multi-layer structure |
| WO2017030352A1 (en) * | 2015-08-18 | 2017-02-23 | 고려대학교 산학협력단 | Flexible transparent electrode having azo/ag/azo multilayered thin film structure, and manufacturing method therefor |
| CN208225875U (en) * | 2018-02-11 | 2018-12-11 | 无锡博硕珈睿科技有限公司 | Capacitor device structure and capacitor with combination electrode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110853800A (en) * | 2018-08-20 | 2020-02-28 | 郭明智 | Composite conductive material |
| CN109545553A (en) * | 2018-10-31 | 2019-03-29 | 武汉大学 | A kind of preparation method of the transparent flexible capacitor of high-quality-factor |
| CN111739736A (en) * | 2020-06-29 | 2020-10-02 | 陕西理工大学 | Flexible thin film capacitor with high energy storage density and preparation method |
| CN111739736B (en) * | 2020-06-29 | 2021-11-30 | 陕西理工大学 | Flexible thin film capacitor with high energy storage density and preparation method |
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