CN106098935A - A kind of low-power consumption oxide wire memristor and the method realizing its synaptic function - Google Patents
A kind of low-power consumption oxide wire memristor and the method realizing its synaptic function Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000003977 synaptic function Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 210000000225 synapse Anatomy 0.000 claims abstract description 16
- 230000005284 excitation Effects 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- -1 PCO Substances 0.000 claims description 2
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 claims description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 229920002530 polyetherether ketone Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 229910017435 S2 In Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002567 autonomic effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
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- 241000208340 Araliaceae Species 0.000 description 1
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- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 210000002569 neuron Anatomy 0.000 description 1
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- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- Thermistors And Varistors (AREA)
Abstract
The present invention relates to a kind of low-power consumption oxide wire memristor and the method realizing its electronic synapse function, this oxide wire memristor includes: substrate；First termination electrode, is arranged on substrate, and forms excellent electric contact with substrate；Oxide wire medium, is arranged at the first termination electrode side；Second termination electrode, is correspondingly arranged in oxide wire medium side, and this oxide wire memristor has good change resistance performance under low-power consumption and can realize electronic synapse function under low-power consumption by specific mode of excitation.
Description
Technical field
The present invention relates to technical field of microelectronic devices, particularly relate to a kind of low-power consumption oxide wire memristor and reality
The method of its electronic synapse function existing.
Background technology
The arrival of big data age produces urgent needs to high-performance calculation.But in traditional computing architecture, central authorities
Message transmission rate between processing unit and memorizer is limited so that be subject to by the calculating system of von Neumann structure
Challenge.There is the circuit of concurrent operation function, information storage and the ability processed can be provided simultaneously with, thus eliminate this bottleneck,
In this counting system, the electronic device of similar biological neuron and synapse is it is critical that elementary cell.
At present, electronic synapse based on film state memristor generally has the power consumption of bigger (electric current reaches milliampere level), and
Memristor based on oxide lines, because its draw ratio is much larger than film state structure, can realize larger current close under square one
Degree, therefore its power consumption is typically smaller than film state device.But, not yet someone provides oxide lines memristor to use as electronic synapse
Technical scheme.
Summary of the invention
It is an object of the invention to provide a kind of low-power consumption oxide wire memristor and realize its electronic synapse function
Method, to overcome defect present in prior art.
For achieving the above object, the technical scheme is that a kind of low-power consumption oxide wire memristor, including:
One substrate；
One first termination electrode, is arranged on described substrate, and forms electrical contact with described substrate；
Monoxide wire medium, is arranged on described substrate and is arranged at described first termination electrode side；
One second termination electrode, is arranged on described substrate and is correspondingly arranged in the side of described oxide wire medium.
Wherein, described oxide wire medium has the resistance roll-off characteristic under electric excitation.
Further, in an embodiment of the present invention, described oxide wire medium is arranged at described first termination electrode
Right side or top；If described oxide wire medium is arranged at the right side of described first termination electrode, the most described second termination electrode sets
It is placed in the right side of described oxide wire medium；If described oxide wire medium is arranged at the top of described first termination electrode,
The most described second termination electrode is arranged at the top of described oxide wire medium.
Further, in an embodiment of the present invention, it is prepared in accordance with the following steps:
Step S1: make institute by the method for magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation over the substrate
State the first termination electrode；
Step S2: on the right side of described first termination electrode or be provided above described oxide wire medium, and with described first end
Electrode forms electrical contact；
Step S3: corresponding the right side of described oxide wire medium or above by magnetron sputtering, PECVD, MOCVD, ALD,
The method of MBE, PLD or evaporation makes described second termination electrode, this second termination electrode and described first termination electrode formed symmetry or
Unsymmetric structure, and form electrical contact with described oxide wire medium.
Further, in an embodiment of the present invention, in described step S2, the preparation side of described oxide wire medium
Method is: magnetron sputtering, CVD, ALD, MBE, PLD, evaporates or forms oxide lines by the method for micro-electronic machining.
Further, in an embodiment of the present invention, described substrate is polymer, quasiconductor or insulator；Described first
Termination electrode and described second termination electrode are metal, metal alloy, conductive metallic compound and quasiconductor.
Further, in an embodiment of the present invention, described polymer be plastics, rubber, PET, PEN, PEEK, PC,
PES, PAR, PCO, PMMA and PI；Described metal is Al, Ti, Ta, Cu, Pt, Au, W, Ni or Ag；Described metal alloy is Pt/
Ti, Ti/Ta, Cu/Ti, Cu/Au, Cu/Al, Ti/W or Al/Zr；Described conductive metallic compound is TiN, TiW, TaN, WSi,
AZO, ITO or FTO；Described oxide wire medium is ZnO, CuO, Cu2O、NiO、Al2O3、TiO2Or MgO.
Further, in an embodiment of the present invention, described oxide wire memristor is through continuous print repeatedly the first voltage
Scanning or the first current scanning, make described oxide wire memristor taper to high-impedance state from low resistance state, then through continuously
Repeatedly the second voltage scanning or the second current scanning, make described oxide wire memristor gradually revert to low-resistance from high-impedance state
State, wherein, the first voltage and the opposite polarity of the second voltage, the first electric current and the second sense of current are contrary；And this kind of resistance
Or the continuous modulation of conductance also can be realized by applying positive electric pulse or negative electric pulses continuously.
Further, also provide for a kind of method that low-power consumption oxide wire memristor realizes its synaptic function, use one
Kind of the pulse method to superposition, by two pulse passages of a test system respectively to described first termination electrode and described the
Two termination electrode input pulses also control the time difference of the two poles of the earth electric pulse, and described oxide wire memristor is by superimposed pulse signal
Impact, its resistance change rate or conductance rate of change, namely weight will change, thus realize the self-learning function of similar synapse.
Further, in an embodiment of the present invention, any one during described pulse is square wave, triangular wave, sine wave
Or it is multiple.
Compared to prior art, the method have the advantages that a kind of low-power consumption oxide proposed by the invention
Wire memristor and the method realizing its electronic synapse function, be prepared as wire recall by arranging electrode at oxide lines two ends
Resistance device, by specific mode of excitation, can obtain the autonomic learning function of similar synapse under low-power consumption.
Accompanying drawing explanation
Fig. 1 is the structural representation of oxide wire memristor in the present invention.
Fig. 2 is the voltage-current characteristic curve of oxide wire memristor in the present invention.
Fig. 3 be in the present invention oxide wire memristor under DC voltage sweep pattern, resistance continuously adjust process.
Fig. 4 be in the present invention oxide wire memristor unit under potential pulse, resistance continuously adjust process.
Fig. 5 be in the present invention oxide wire memristor to the electronic synapse learning functionality under time-dependent pulse.
[label declaration]: 01-the first termination electrode；02-oxide wire medium；03-the second termination electrode；04-substrate.
Detailed description of the invention
Below in conjunction with the accompanying drawings, technical scheme is specifically described.The present invention provides preferred embodiment, only uses
It is described further in the present invention, should not be considered limited to embodiment set forth herein, can not be interpreted as this
The restriction of bright protection domain, this art skilled person the present invention is made according to foregoing invention content some are nonessential
Improve and adjust, still fall within protection scope of the present invention.Experimental technique used in embodiments discussed below is as without special theory
Bright, it is conventional method；Used material, reagent etc., if no special instructions, the most commercially obtain.In the example shown, lining
The structures such as the end, the first termination electrode, oxide line, the second termination electrode are idealized model, should not be considered as its ginseng of strict regulations
Number, physical dimension.Here, be the schematic diagram of idealized embodiments of the present invention with reference to figure, the embodiment shown in the present invention should not
It is considered as limited to the given shape in region shown in figure, but includes other shapes being capable of identical function.
It is described in detail below in conjunction with preferred embodiment.
Further, in the present embodiment, as shown in Figure 1, it is provided that a kind of oxide wire memristor, including:
One substrate 04；
One first termination electrode 01, is arranged on substrate 04；
Monoxide wire medium 02, is arranged on the right side of the first termination electrode 01；
One second termination electrode 03, is arranged at the right side of oxide wire medium 02.
Further, in the present embodiment, termination electrode 01 He that the preparation contact of oxide wire medium 02 two ends is good
03, substrate 04 uses silicon oxide, the Ti that the first termination electrode 01 uses thickness to be 110 nm, oxide wire medium 02 a length of 10
μ m diameter is the zinc oxide nanowire of 100 nm, and the second termination electrode 03 thickness uses the Ti of 110 nm, and makes in accordance with the following steps
Standby:
B1) at Si/SiO2Prepare left end Titanium electrode by magnetron sputtering method on substrate, namely on substrate 04, prepare first
Termination electrode 01；
B2) zinc oxide nanowire is made on the right side of the first termination electrode 01 by CVD, as oxide wire medium 02, and
Excellent electric contact is formed with left end Ti electrode 01；
B3) right-hand member Titanium electrode is prepared on the right side of zinc oxide nanowire by magnetron sputtering method, as the second termination electrode 03,
And form excellent electric contact with zinc oxide nanowire.
Further, in the present embodiment, the oxide wire memristor prepared by above-mentioned steps is carried out electricity survey
Examination.As in figure 2 it is shown, be the voltage-current characteristic curve of oxide wire memristor, wherein, execute at the first termination electrode during test
Add and just (bear) voltage and the second termination electrode is ground connection.As it is shown on figure 3, be that this oxide wire memristor is in DC voltage sweep
Resistance under pattern continuously adjusts process, shows that this device can realize continuously adjusting of resistance by applying voltage continuously.As
Shown in Fig. 4, under pulse excitation, the resistance of this oxide wire memristor continuously adjusts performance, and this regulation process is similar to raw
The regulation process of bonding strength in thing nerve synapse.As it is shown in figure 5, be that this oxide wire memristor can to burst length dependence
The test of plasticity, along with two ends burst length difference diminishes, resistance change rate (that is, weights) increases, with nerve synapse in biology
Learning rules are consistent, and result shows that the oxide wire memristor in the present embodiment has function and its work electricity of autonomic learning
Stream, less than 10 A, has low-power consumption.
Being above presently preferred embodiments of the present invention, all changes made according to technical solution of the present invention, produced function is made
With during without departing from the scope of technical solution of the present invention, belong to protection scope of the present invention.
Claims (9)
1. a low-power consumption oxide wire memristor, it is characterised in that including:
One substrate；
One first termination electrode, is arranged on described substrate, and forms electrical contact with described substrate；
Monoxide wire medium, is arranged on described substrate and is arranged at described first termination electrode side；
One second termination electrode, is arranged on described substrate and is correspondingly arranged in the side of described oxide wire medium；
Wherein, described oxide wire medium has the resistance roll-off characteristic under electric excitation.
A kind of low-power consumption oxide wire memristor the most according to claim 1, it is characterised in that described oxide wire
Medium is arranged at right side or the top of described first termination electrode；If described oxide wire medium is arranged at described first termination electrode
Right side, the most described second termination electrode is arranged at the right side of described oxide wire medium；If described oxide wire medium sets
Being placed in the top of described first termination electrode, the most described second termination electrode is arranged at the top of described oxide wire medium.
A kind of low-power consumption oxide wire memristor the most according to claim 2, it is characterised in that enter in accordance with the following steps
Row preparation:
Step S1: make institute by the method for magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation over the substrate
State the first termination electrode；
Step S2: on the right side of described first termination electrode or be provided above described oxide wire medium, and with described first end
Electrode forms electrical contact；
Step S3: corresponding the right side of described oxide wire medium or above by magnetron sputtering, PECVD, MOCVD, ALD,
The method of MBE, PLD or evaporation makes described second termination electrode, this second termination electrode and described first termination electrode formed symmetry or
Unsymmetric structure, and form electrical contact with described oxide wire medium.
A kind of low-power consumption oxide wire memristor the most according to claim 3, it is characterised in that in described step S2
In, the preparation method of described oxide wire medium is: magnetron sputtering, CVD, ALD, MBE, PLD, evaporates or is added by microelectronics
The method of work forms oxide lines.
A kind of low-power consumption oxide wire memristor the most according to claim 1, it is characterised in that described substrate is polymerization
Thing, quasiconductor or insulator；Described first termination electrode and described second termination electrode are metal, metal alloy, conductive metallization
Compound and quasiconductor.
A kind of low-power consumption oxide wire memristor the most according to claim 5, it is characterised in that described polymer is for moulding
Material, rubber, PET, PEN, PEEK, PC, PES, PAR, PCO, PMMA and PI；Described metal is Al, Ti, Ta, Cu, Pt, Au, W, Ni
Or Ag；Described metal alloy is Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Cu/Al, Ti/W or Al/Zr；Described conducting metal chemical combination
Thing is TiN, TiW, TaN, WSi, AZO, ITO or FTO；Described oxide wire medium is ZnO, CuO, Cu2O、NiO、Al2O3、
TiO2Or MgO.
A kind of low-power consumption oxide wire memristor the most according to claim 1, it is characterised in that described oxide wire
Memristor through continuous print repeatedly the first voltage scanning or the first current scanning, make described oxide wire memristor from low resistance state by
Gradually change to high-impedance state, then through continuous print repeatedly the second voltage scanning or the second current scanning, make described oxide wire recall
Resistance device gradually reverts to low resistance state, wherein, the first voltage and the opposite polarity of the second voltage, the first electric current and second from high-impedance state
Sense of current is contrary；And the continuous modulation of this kind of resistance or conductance also can come by applying positive electric pulse or negative electric pulses continuously
Realize.
8. the method realizing low-power consumption oxide wire memristor synapse function described in any one of claim 1 to 7, its
It is characterised by, uses a kind of pulse method to superposition, by two pulse passages of a test system respectively to described first
Termination electrode and described second termination electrode input pulse, and control described first termination electrode pulse and described second termination electrode pulse
Time difference, described oxide wire memristor is affected by superposition dipulse signal, its resistance change rate or conductance change
Rate will change, thus realize the self-learning function of similar synapse.
A kind of method realizing low-power consumption oxide wire memristor synapse function the most according to claim 8, its feature
Being, described pulse is any one or more in square wave, triangular wave, sine wave.
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| CN111323654A (en) * | 2020-02-28 | 2020-06-23 | 北京大学 | Synapse simulation method and system of resistive device |
| CN111834530A (en) * | 2020-07-29 | 2020-10-27 | 南开大学 | Two-end artificial synapse based on single crystal perovskite and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108664735A (en) * | 2018-05-11 | 2018-10-16 | 华中科技大学 | The implementation method of STDP pulse design methods and diversification STDP based on multivalue memristor |
| CN108664735B (en) * | 2018-05-11 | 2020-06-09 | 华中科技大学 | STDP pulse design method based on multivalued memristor and realization method of diversified STDP |
| CN111323654A (en) * | 2020-02-28 | 2020-06-23 | 北京大学 | Synapse simulation method and system of resistive device |
| CN111323654B (en) * | 2020-02-28 | 2021-08-06 | 北京大学 | Synapse simulation method and system of resistive device |
| CN111834530A (en) * | 2020-07-29 | 2020-10-27 | 南开大学 | Two-end artificial synapse based on single crystal perovskite and preparation method thereof |
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