CN105226183A - A kind of resistance-variable storing device and improve the method for its positive negative sense difference between current - Google Patents
A kind of resistance-variable storing device and improve the method for its positive negative sense difference between current Download PDFInfo
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- CN105226183A CN105226183A CN201510678680.7A CN201510678680A CN105226183A CN 105226183 A CN105226183 A CN 105226183A CN 201510678680 A CN201510678680 A CN 201510678680A CN 105226183 A CN105226183 A CN 105226183A
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Abstract
The present invention relates to a kind of resistance-variable storing device and improve the method for its positive negative sense difference between current, shown resistance-variable storing device comprises: a substrate; One first end electrode, is arranged on described substrate, and forms excellent electric contact with substrate; One resistive dielectric layer, is arranged at left side or the top of described first end electrode; One second termination electrode, if described resistive dielectric layer is arranged at the left side of described first end electrode, then described second termination electrode is arranged at the left side of described resistive dielectric layer; If described resistive dielectric layer is arranged at the top of described first end electrode, then described second termination electrode is arranged at the top of described resistive dielectric layer.Wherein, described resistive dielectric layer can be double-deck resistive medium, the laminated construction that described double-deck resistive medium is made up of the first change resistance layer and the second change resistance layer.The present invention adopts plasma to modify, in media as well or dielectric surface place introduce defect, thus effectively suppress negative current value and greatly improve positive negative sense current differential.
Description
Technical field
The invention belongs to semiconductor memory technologies field, particularly a kind of resistance-variable storing device and improve the method for its positive negative sense difference between current.
Background technology
Resistance-variable storing device (RRAM) is made up of simple sandwich structure (electrode/storage medium/electrode) usually, by applying the signal of telecommunication, changing the resistance states of storage medium, thus realizing bistable memory function.Along with technical development, memory trends towards adopting the three-dimensional of right-angled intersection integrated, to obtain higher storage density.But the crossfire in this framework can cause misreading of storage information.Therefore, improve resistance-variable storing device positive negative sense difference between current (or rectification characteristic) and obtain the non-linear of I-E characteristic, better can suppress the crossfire flowing through low-resistance memory cell, thus improving the reliability of digital independent.
Summary of the invention
In view of this, the object of this invention is to provide a kind of resistance-variable storing device and improve the method for its positive negative sense difference between current, this memory is by two termination electrodes and be sandwiched in two interelectrode resistive media and form, and adopt plasma modification introducing defect, thus effectively suppress negative current value and the positive negative sense current differential of very big raising.
The present invention adopts following scheme to realize: a kind of resistance-variable storing device, comprising: a substrate; One first end electrode, is arranged on described substrate, and forms excellent electric contact with substrate; One resistive dielectric layer, is arranged at left side or the top of described first end electrode; One second termination electrode, if described resistive dielectric layer is arranged at the left side of described first end electrode, then described second termination electrode is arranged at the left side of described resistive dielectric layer; If described resistive dielectric layer is arranged at the top of described first end electrode, then described second termination electrode is arranged at the top of described resistive dielectric layer; Wherein, the surface of described resistive dielectric layer is through plasma treatment.
Further, described substrate is polymer, metal, semiconductor or insulator; Described termination electrode is conducting metal, metal alloy, conductive metallic compound or semiconductor; Described resistive dielectric layer is semiconductor or insulator.
Further, described polymer comprises plastics, rubber, PET, PEN, PEEK, PC, PES, PAR, PCO, PMMA and PI; Described conducting metal comprises Ta, Cu, Pt, Ti, Au, W, Ni, Al and Ag; Described metal alloy comprises Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Ti/W and Al/Zr; Described conductive metallic compound comprises TiN, TiW, TaN and WSi; Described semiconductor comprises Si, ZrO
x, Ge, ZnO, ITO, GZO, AZO, TiO
x, TaO
x, HfO
x, GeO
xand FTO; Described insulator comprises AlO
x, MgO, ZrO
x, HfO
x, GeO
xand SiO
x.
The present invention can realize a kind of method improving the positive negative sense difference between current of above-mentioned resistance-variable storing device, adopts the surface of resistive dielectric layer described in plasma treatment, comprises the following steps:
Step S11: make first end electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation on substrate;
Step S12: the left side of described first end electrode or above make resistive dielectric layer by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described first end electrode;
Step S13: by the surface of resistive dielectric layer described in plasma treatment;
Step S14: the left side of described resistive dielectric layer or above make the second termination electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation, and form excellent electric contact;
If in described step S12, make resistive dielectric layer in the left side of described first end electrode, then, in described step S14, make the second termination electrode in the left side of described resistive dielectric layer; If in described step S12, above described first end electrode, make resistive dielectric layer, then, in described step S14, above described resistive dielectric layer, make the second termination electrode.
Further, the plasma source carrying out plasma treatment employing in described step S13 is Ar, N
2, O
2, CF
4, SF
6, NH
3, H
2, CHF
3one or more in gas.
The present invention also can adopt following scheme to realize: a kind of resistance-variable storing device, comprising: a substrate; One first end electrode, is arranged on described substrate, and forms excellent electric contact with described substrate; Pair of lamina resistive medium, is arranged at left side or the top of described first end electrode; One second termination electrode, if described double-deck resistive medium is arranged at the left side of described first end electrode, then described second termination electrode is arranged at the left side of described double-deck resistive medium; If described double-deck resistive medium is arranged at the top of described first end electrode, then described second termination electrode is arranged at the top of described double-deck resistive medium; Wherein, the laminated construction that described double-deck resistive medium is made up of the first change resistance layer and the second change resistance layer, the surface of one of them change resistance layer is through plasma treatment.
Further, described substrate is polymer, metal, semiconductor or insulator; Described termination electrode is conducting metal, metal alloy, conductive metallic compound or semiconductor; Described dual-layer storage media is semiconductor or insulator.
Further, described polymer comprises plastics, rubber, PET, PEN, PEEK, PC, PES, PAR, PCO, PMMA and PI; Described conducting metal comprises Ta, Cu, Pt, Ti, Au, W, Ni, Al and Ag; Described metal alloy comprises Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Ti/W and Al/Zr; Described conductive metallic compound comprises TiN, TiW, TaN and WSi; Described semiconductor comprises Si, ZrO
x, Ge, ZnO, ITO, GZO, AZO, TiO
x, TaO
x, HfO
x, GeO
xand FTO; Described insulator comprises AlO
x, MgO, ZrO
x, HfO
x, GeO
xand SiO
x.
The present invention can realize a kind of method improving the positive negative sense difference between current of above-mentioned resistance-variable storing device, adopts the inside of double-deck resistive medium described in plasma treatment, comprises the following steps:
Step S21: make first end electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation on substrate;
Step S22: the left side of described first end electrode or above make the second change resistance layer by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described first end electrode;
Step S23: by the surface of the second change resistance layer described in plasma treatment;
Step S24: described plasma treatment cross the second change resistance layer left side or above make the first change resistance layer by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described second change resistance layer;
Step S25: the left side of described first change resistance layer or above make the second termination electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation, and form excellent electric contact;
If in described step S22, make the second change resistance layer in the left side of described first end electrode, then, in described step S24, make the first change resistance layer in the left side of described second change resistance layer; If in described step S22, above described first end electrode, make the second change resistance layer, then, in described step S24, above described second change resistance layer, make the first change resistance layer;
If in described step S24, make the first change resistance layer in the left side of described second change resistance layer, then, in described step S25, make the second termination electrode in the left side of described first change resistance layer; If in described step S24, above described second change resistance layer, make the first change resistance layer, then, in described step S25, above described first change resistance layer, make the second termination electrode.
Further, the plasma source carrying out plasma treatment employing in described step S23 is Ar, N
2, O
2, CF4, SF
6, NH
3, H
2, CHF
3one or more in gas.
Compared with prior art, the invention has the beneficial effects as follows and provide a kind of process improving the positive negative sense difference between current of resistance-variable storing device, thus realize the embedded rectification function of resistance-variable storing device, improve the reliability of resistance-variable storing device read-write.The method adopts plasma treatment to introduce defect at resistive media interior or surface, improves positive negative sense difference between current, improves rectification characteristic, have very strong practicality and wide application prospect.
Accompanying drawing explanation
Fig. 1 is the structural representation of resistance-variable storing device in the present invention.
Fig. 2 is through plasma treatment and the XPS spectrum figure without plasma treatment ZnO surface in the present invention.
Fig. 3 is the HfO through different parameters Ar plasma treatment in the present invention
xthe I-E characteristic of/ZnO resistive medium.
Fig. 4 is through plasma treatment and the I-E characteristic without plasma treatment Ti/ZnO nano wire/Ti resistance-variable storing device in the present invention.
Illustrate: 1-second termination electrode, 2-resistive dielectric layer, 21-first change resistance layer, 22-second change resistance layer, 3-first end electrode, 4-substrate.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described.The invention provides preferred embodiment; only be described further for the present invention; should not be considered to be only limitted to embodiment set forth herein; limiting the scope of the invention can not be interpreted as; some nonessential improvement and adjustment that this art skilled person makes the present invention according to foregoing invention content, still belong to protection scope of the present invention.The experimental technique used in following preferred embodiment if no special instructions, is conventional method; Material used, reagent etc., if no special instructions, all can obtain from commercial channels.In the example shown, the structures such as substrate, first end electrode, resistance-change memory medium, the second termination electrode are idealized model, should not be considered to its parameter of strict regulations, physical dimension.At this, reference diagram is the schematic diagram of idealized embodiments of the present invention, and illustrated embodiment should not be considered to the given shape being only limitted to region shown in figure, but comprises other shapes that can realize identical function.
The present embodiment provides a kind of resistance-variable storing device, as shown in (c) He (d) in Fig. 1, comprises a substrate 4; One first end electrode 3, is arranged on described substrate 4, and forms excellent electric contact with substrate 4; One resistive dielectric layer 2, is arranged at left side or the top of described first end electrode 3; One second termination electrode 1, if described resistive dielectric layer 2 is arranged at the left side of described first end electrode 3, then described second termination electrode 1 is arranged at the left side of described resistive dielectric layer 2; If described resistive dielectric layer 2 is arranged at the top of described first end electrode 3, then described second termination electrode 1 is arranged at the top of described resistive dielectric layer 2, and wherein, the surface of described resistive dielectric layer 2 is through plasma treatment.
In the present embodiment, described substrate 4 is polymer, metal, semiconductor or insulator; Described termination electrode 1 and 3 is conducting metal, metal alloy, conductive metallic compound or semiconductor; Described resistive dielectric layer 2 is semiconductor or insulator.
In the present embodiment, described polymer comprises plastics, rubber, PET, PEN, PEEK, PC, PES, PAR, PCO, PMMA and PI; Described conducting metal comprises Ta, Cu, Pt, Ti, Au, W, Ni, Al and Ag; Described metal alloy comprises Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Ti/W and Al/Zr; Described conductive metallic compound comprises TiN, TiW, TaN and WSi; Described semiconductor comprises Si, ZrO
x, Ge, ZnO, ITO, GZO, AZO, TiO
x, TaO
x, HfO
x, GeO
xand FTO; Described insulator comprises AlO
x, MgO, ZrO
x, HfO
x, GeO
xand SiO
x.
In the present embodiment, the method for the positive negative sense difference between current of a kind of above-mentioned raising resistance-variable storing device, adopts the surface of resistive dielectric layer described in plasma treatment, comprises the following steps:
Step S11: make first end electrode 3 by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation on the substrate 4;
Step S12: the left side of described first end electrode 3 or above make resistive dielectric layer 2 by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described first end electrode 3;
Step S13: by the surface of resistive dielectric layer 2 described in plasma treatment;
Step S14: the left side of described resistive dielectric layer 2 or above make the second termination electrode 1 by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation, and form excellent electric contact;
If in described step S12, make resistive dielectric layer 2 in the left side of described first end electrode 3, then, in described step S14, make the second termination electrode 1 in the left side of described resistive dielectric layer 2; If in described step S12, above described first end electrode 3, make resistive dielectric layer 2, then, in described step S14, above described resistive dielectric layer 2, make the second termination electrode 1.
Further, the plasma source carrying out plasma treatment employing in described step S13 is Ar, N
2, O
2, CF
4, SF
6, NH
3, H
2, CHF
3one or more in gas.
The present embodiment also provides a kind of resistance-variable storing device, as shown in (a) He (b) in Fig. 1, comprises a substrate 4; One first end electrode 3, is arranged on described substrate 4, and forms excellent electric contact with described substrate 4; Pair of lamina resistive medium, is arranged at left side or the top of described first end electrode 3; One second termination electrode 1, if described double-deck resistive medium is arranged at the left side of described first end electrode 3, then described second termination electrode 1 is arranged at the left side of described double-deck resistive medium; If described double-deck resistive medium is arranged at the top of described first end electrode 3, then described second termination electrode 1 is arranged at the top of described double-deck resistive medium; Wherein, the laminated construction that described double-deck resistive medium is made up of the first change resistance layer 21 and the second change resistance layer 22.
In the present embodiment, described substrate 4 is polymer, metal, semiconductor or insulator; Described termination electrode 1 and 3 is conducting metal, metal alloy, conductive metallic compound or semiconductor; Described dual-layer storage media is semiconductor or insulator.
In the present embodiment, described polymer comprises plastics, rubber, PET, PEN, PEEK, PC, PES, PAR, PCO, PMMA and PI; Described conducting metal comprises Ta, Cu, Pt, Ti, Au, W, Ni, Al and Ag; Described metal alloy comprises Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Ti/W and Al/Zr; Described conductive metallic compound comprises TiN, TiW, TaN and WSi; Described semiconductor comprises Si, ZrO
x, Ge, ZnO, ITO, GZO, AZO, TiO
x, TaO
x, HfO
x, GeO
xand FTO; Described insulator comprises AlO
x, MgO, ZrO
x, HfO
x, GeO
xand SiO
x.
In the present embodiment, provide a kind of method improving the positive negative sense difference between current of above-mentioned resistance-variable storing device, adopt the inside of double-deck resistive medium described in plasma treatment, comprise the following steps:
Step S21: make first end electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation on the substrate 4;
Step S22: the left side of described first end electrode 3 or above make the second change resistance layer 22 by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described first end electrode 3;
Step S23: by the surface of the second change resistance layer 22 described in plasma treatment;
Step S24: described plasma treatment cross the second change resistance layer 22 left side or above make the first change resistance layer 21 by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described second change resistance layer 22;
Step S25: the left side of described first change resistance layer 21 or above make the second termination electrode 1 by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation, and form excellent electric contact;
If in described step S22, make the second change resistance layer 22 in the left side of described first end electrode 3, then, in described step S24, make the first change resistance layer 21 in the left side of described second change resistance layer 22; If in described step S22, above described first end electrode 3, make the second change resistance layer 22, then, in described step S24, above described second change resistance layer 22, make the first change resistance layer 21;
If in described step S24, make the first change resistance layer 21 in the left side of described second change resistance layer 22, then, in described step S25, make the second termination electrode 1 in the left side of described first change resistance layer 21; If in described step S24, above described second change resistance layer 22, make the first change resistance layer 21, then, in described step S25, above described first change resistance layer 21, make the second termination electrode 1.
In the present embodiment, the plasma source carrying out plasma treatment employing in described step S23 is Ar, N
2, O
2, CF
4, SF
6, NH
3, H
2, CHF
3one or more in gas.
In the present embodiment, as shown in Figure 2, the accounting of ZnO surface Lacking oxygen in total oxygen after plasma treatment is significantly less than without plasma treatment ZnO surface Lacking oxygen (Ob) in the accounting of total oxygen (Oa+Ob+Oc).Therefore, plasma treatment introduces Lacking oxygen defect in ZnO surface.And the potential barrier of interface is have adjusted just because of the existence of these Lacking oxygen defects, this will affect the transport behavior of electric charge and change the positive negative sense difference between current of electric current, and then affect rectification characteristic.
Be described in detail below in conjunction with preferred embodiment.
Embodiment 1:
A kind of resistance-variable storing device, its structure, as shown in (a) in Fig. 1, be the ITO of 200nm be the ZnO of 15nm as first end electrode 3, thickness is the HfO of 30nm as the second change resistance layer 22, thickness by glass substrate 4, thickness
xbe that the Ti of 200nm is formed as the second termination electrode 1 as the first change resistance layer 21 and thickness.
In order to improve the positive negative sense difference between current of this resistance-variable storing device, its concrete making step is as follows:
The glass substrate with ITO conductive film is put into vacuum chamber, adopts magnetron sputtering to prepare the ZnO of 15nm as the second change resistance layer 22; Subsequently with Ar plasma treatment ZnO second change resistance layer 22 with (60 watts, 120 seconds), (100 watts, 120 seconds) and (100 watts, 200 seconds) three pairs of parameters; Then magnetron sputtering is adopted to prepare the HfO of 30nm
xas the first change resistance layer 21, thus form dual-layer storage media; Thereafter, at HfO
xon sputter the Ti electrode of 200nm.Finally, by microelectronic processing technology, process the resistance-variable storing device of separation, its electrode area is about 40000 square microns.
Fig. 3 is HfO after three kinds of different parameters process
xthe I-E characteristic of/ZnO resistance-variable storing device.Upper as can be seen from figure, along with the increase of Ar plasma treatment energy (Power x action time), the ratio of forward current and negative current increases (by ~ 10 times be strengthened to ~ 60 times), embody the enhancing of rectification effect.
Embodiment 2:
A kind of resistance-variable storing device, its structure is as shown in (d) in Fig. 1, by PET substrate 4, thickness be the Ti of 200nm as first end electrode 3, length to be 10 μm of diameters the be ZnO nano-wire of 50nm as resistive dielectric layer 2, thickness is that the Ti of 200nm is formed as the second termination electrode 1.
In order to improve the positive negative sense difference between current of this resistance-variable storing device, its concrete making step is as follows:
ZnO nano-wire is sprinkling upon PET substrate, then by the mode of magnetron sputtering by first end electrode fabrication on ZnO nano-wire, then adopt 100 watts of Ar plasma treatment ZnO nano-wires 120 seconds, prepare the second termination electrode at ZnO nano-wire other end magnetron sputtering subsequently.
Can be seen by test, as shown in Figure 4, almost can ignore without the positive negative sense difference between current of Ar plasma treatment ZnO nano-wire, but the ZnO nano-wire after Ar plasma treatment has the otherness of extremely obviously positive negative current, positive negative sense current ratio is 1000 times, embodies extremely strong rectifying effect.
Be more than preferred embodiment of the present invention, all changes done according to technical solution of the present invention, when the function produced does not exceed the scope of technical solution of the present invention, all belong to protection scope of the present invention.
Claims (10)
1. a resistance-variable storing device, is characterized in that, comprising:
One substrate;
One first end electrode, is arranged on described substrate, and forms excellent electric contact with substrate;
One resistive dielectric layer, is arranged at left side or the top of described first end electrode;
One second termination electrode, if described resistive dielectric layer is arranged at the left side of described first end electrode, then described second termination electrode is arranged at the left side of described resistive dielectric layer; If described resistive dielectric layer is arranged at the top of described first end electrode, then described second termination electrode is arranged at the top of described resistive dielectric layer; Wherein, the surface of described resistive dielectric layer is through plasma treatment.
2. a kind of resistance-variable storing device according to claim 1, is characterized in that: described substrate is polymer, metal, semiconductor or insulator; Described termination electrode is conducting metal, metal alloy, conductive metallic compound or semiconductor; Described resistive dielectric layer is semiconductor or insulator.
3. a kind of resistance-variable storing device according to claim 2, is characterized in that: described polymer comprises plastics, rubber, PET, PEN, PEEK, PC, PES, PAR, PCO, PMMA and PI; Described conducting metal comprises Ta, Cu, Pt, Ti, Au, W, Ni, Al and Ag; Described metal alloy comprises Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Ti/W and Al/Zr; Described conductive metallic compound comprises TiN, TiW, TaN and WSi; Described semiconductor comprises Si, ZrO
x, Ge, ZnO, ITO, GZO, AZO, TiO
x, TaO
x, HfO
x, GeO
xand FTO; Described insulator comprises AlO
x, MgO, ZrO
x, HfO
x, GeO
xand SiO
x.
4. a resistance-variable storing device, is characterized in that, comprising:
One substrate;
One first end electrode, is arranged on described substrate, and forms excellent electric contact with described substrate;
Pair of lamina resistive medium, is arranged at left side or the top of described first end electrode;
One second termination electrode, if described double-deck resistive medium is arranged at the left side of described first end electrode, then described second termination electrode is arranged at the left side of described double-deck resistive medium; If described double-deck resistive medium is arranged at the top of described first end electrode, then described second termination electrode is arranged at the top of described double-deck resistive medium;
Wherein, the laminated construction that described double-deck resistive medium is made up of the first change resistance layer and the second change resistance layer; The surface of one of them change resistance layer is through plasma treatment.
5. a kind of resistance-variable storing device according to claim 4, is characterized in that: described substrate is polymer, metal, semiconductor or insulator; Described termination electrode is conducting metal, metal alloy, conductive metallic compound or semiconductor; Described double-deck resistive medium is semiconductor or insulator.
6. a kind of resistance-variable storing device according to claim 5, is characterized in that: described polymer comprises plastics, rubber, PET, PEN, PEEK, PC, PES, PAR, PCO, PMMA and PI; Described conducting metal comprises Ta, Cu, Pt, Ti, Au, W, Ni, Al and Ag; Described metal alloy comprises Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Ti/W and Al/Zr; Described conductive metallic compound comprises TiN, TiW, TaN and WSi; Described semiconductor comprises Si, ZrO
x, Ge, ZnO, ITO, GZO, AZO, TiO
x, TaO
x, HfO
x, GeO
xand FTO; Described insulator comprises AlO
x, MgO, ZrO
x, HfO
x, GeO
xand SiO
x.
7. improve a method for the positive negative sense difference between current of resistance-variable storing device described in claim 1, it is characterized in that: the surface adopting resistive dielectric layer described in plasma treatment, comprises the following steps:
Step S11: make first end electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation on substrate;
Step S12: the left side of described first end electrode or above make resistive dielectric layer by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described first end electrode;
Step S13: by the surface of resistive dielectric layer described in plasma treatment;
Step S14: the left side of described resistive dielectric layer or above make the second termination electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation, and form excellent electric contact;
If in described step S12, make resistive dielectric layer in the left side of described first end electrode, then, in described step S14, make the second termination electrode in the left side of described resistive dielectric layer; If in described step S12, above described first end electrode, make resistive dielectric layer, then, in described step S14, above described resistive dielectric layer, make the second termination electrode.
8. a kind of resistance-variable storing device according to claim 7 improves the method for positive negative sense difference between current, it is characterized in that: the plasma source carrying out plasma treatment employing in described step S13 is Ar, N
2, O
2, CF
4, SF
6, NH
3, H
2, CHF
3one or more in gas.
9. improve a method for the positive negative sense difference between current of resistance-variable storing device described in claim 4, it is characterized in that: the inside adopting double-deck resistive medium described in plasma treatment, comprises the following steps:
Step S21: make first end electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation on substrate;
Step S22: the left side of described first end electrode or above make the second change resistance layer by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described first end electrode;
Step S23: by the surface of the second change resistance layer described in plasma treatment;
Step S24: described plasma treatment cross the second change resistance layer left side or above make the first change resistance layer by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD, sol-gal process or evaporation, and form excellent electric contact with described second change resistance layer;
Step S25: the left side of described first change resistance layer or above make the second termination electrode by magnetron sputtering, PECVD, MOCVD, ALD, MBE, PLD or evaporation, and form excellent electric contact;
If in described step S22, make the second change resistance layer in the left side of described first end electrode, then, in described step S24, make the first change resistance layer in the left side of described second change resistance layer; If in described step S22, above described first end electrode, make the second change resistance layer, then, in described step S24, above described second change resistance layer, make the first change resistance layer;
If in described step S24, make the first change resistance layer in the left side of described second change resistance layer, then, in described step S25, make the second termination electrode in the left side of described first change resistance layer; If in described step S24, above described second change resistance layer, make the first change resistance layer, then, in described step S25, above described first change resistance layer, make the second termination electrode.
10. a kind of resistance-variable storing device according to claim 9 improves the method for positive negative sense difference between current, it is characterized in that: the plasma source carrying out plasma treatment employing in described step S23 is Ar, N
2, O
2, CF
4, SF
6, NH
3, H
2, CHF
3one or more in gas.
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| CN111628075A (en) * | 2020-06-05 | 2020-09-04 | 福州大学 | Method for realizing multi-value non-volatile storage |
| CN111628076A (en) * | 2020-06-05 | 2020-09-04 | 福州大学 | Synapse device and method for improving conductance modulation behavior thereof |
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