CN103794718A - Preparation method of tungsten oxide variable-resistance material in resistive random access memory - Google Patents
Preparation method of tungsten oxide variable-resistance material in resistive random access memory Download PDFInfo
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- CN103794718A CN103794718A CN201210427831.8A CN201210427831A CN103794718A CN 103794718 A CN103794718 A CN 103794718A CN 201210427831 A CN201210427831 A CN 201210427831A CN 103794718 A CN103794718 A CN 103794718A
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Abstract
The invention discloses a preparation method of a tungsten oxide variable-resistance material in a resistive random access memory. According to the method, the tungsten oxide variable-resistance material is prepared by oxidating the surface of tungsten through a PECVD O2plasma method. WOx is prepared by a PECVD oxidation method, which improves the oxygen content of the surface of the variable-resistance material WOx in the RRAM. Therefore, the initial resistance and the minimum operating current of the RRAM are enhanced on the premise of maintaining the memristive property, and a wider range of choices is provided for the development of the RRAM.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to the preparation method of tungsten oxide variable resistance material in resistance-variable storing device.
Background technology
Along with the development of storage market, people more and more pay close attention to high density, high-speed, low-power consumption, have fixedness and low-cost memory product.Wherein flash(flash memory) be the product of the most successful high density fixedness so far.But along with constantly dwindling of device size, the development of flash is restricted, can not be scaled such as program voltage, tunnel oxidation layer attenuate, causes degradation under electric charge hold facility.
In recent years, resistance-variable storing device (Resistive Random Access Memory, RRAM) became the most popular memory technology of industry gradually.This technology utilizes the reversible transformation of resistivity of material to realize the storage of binary message, its memory cell structure is simple, operating rate is fast, low in energy consumption, Information preservation is stablized, have fixedness, and be easy to realize the integrated and multilevel storage of 3 D stereo, be conducive to improve integration density.
The structure of tradition resistance-variable storing device refers to shown in Fig. 1, mainly comprises variable resistance unit 1, top electrode 2 and bottom electrode 3.Variable resistance unit 1 is made up of tungsten 4 and variable resistance material 5 two parts, and variable resistance material 5 is WOx(tungsten oxide), generally in through hole (via), form.Variable resistance unit 1 is connected out with the pole plate of bottom electrode 3 by top electrode 2, carries out erasable operation.Because oxide material has character of changing of resistence, in the time that outside forward voltage is higher, (bottom electrode ground connection, top electrode biasing high voltage), there will be high resistant characteristic; In the time it being applied to negative sense bias voltage in the other direction (bottom electrode connects high potential, top electrode ground connection), there will be low resistance characteristic, therefore, utilize this characteristic just can realize the memory function of information.
At present, the most frequently used preparation method of WOx carries out rapid thermal oxidation (RTO) to tungsten to process, and processes 100 seconds at 450 ℃, makes WOx, as shown in Figure 2.The thickness of the WOx making is general
initial resistance only has tens ohm, and the operating voltage of resistive characteristic needs 2～5 volts conventionally, and conversion is come, and when resistive is voltage-operated, single through hole is produced the electric current of tens of milliamperes.This electric current can produce two severe effects: the one, and requirement circuit design needs very large current driving ability, and produces very large power consumption, and this has greatly limited use and the capacity of memory; The 2nd, requirement connects the enough electric current degree of holding of metal routing needs of this resistive device unit, the electric current of number milliampere needs metal live width more than corresponding micron order conventionally, this wiring width than common memory is wide one more than the order of magnitude, otherwise will cause the ELECTROMIGRATION PHENOMENON of metal wire, greatly restrict chip area and application.
The character of changing of resistence of WOx mainly concentrates on the upper surface of WOx.If the oxygen content in WOx upper surface can promote, its initial resistance will obviously improve.The WOx preparing with traditional RTO, the content of its Surface Oxygen is lower.Due to the restriction of RTO board, the time that RTO processes can not be oversize, and the not too high temperature of ability of the bottom electrode aluminium of RRAM, so just limited the optimization of RTO.And, increase time, the temperature of RTO and pass into the content of oxygen, also only the thickness of the WOx forming is improved, but the content of WOx Surface Oxygen is not improved significantly.
Summary of the invention
The technical problem to be solved in the present invention is to provide the preparation method of tungsten oxide variable resistance material in a kind of resistance-variable storing device, and it can improve initial resistance and the minimum operating current of RRAM.
For solving the problems of the technologies described above, the preparation method of tungsten oxide variable resistance material in resistance-variable storing device of the present invention, the method adopts plasma reinforced chemical vapour deposition (PECVD) method to be oxidized tungsten surface, prepares described tungsten oxide variable resistance material.
The gas source of PECVD can be oxygen.
The thickness of the tungsten oxide variable resistance material preparing exists
better.
The present invention is by adopting PECVD method for oxidation to prepare WOx, improve the oxygen content on the variable resistance material WOx surface in RRAM, thereby keeping recalling under the prerequisite of this key property of resistance characteristic, promoting initial resistance and the minimum operating current of RRAM, for the development of RRAM provides broader selection.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional RRAM.
Fig. 2 is the variable resistance unit that adopts traditional RTO processing method to prepare.
Fig. 3 is the preparation method of the WOx variable resistance material of the embodiment of the present invention.
Fig. 4 is the variable resistance unit that adopts the method for the embodiment of the present invention to prepare.
Fig. 5 is that W, the O ratio in the variable resistance material WOx preparing by the POP method of traditional RTO method and the embodiment of the present invention changes schematic diagram.
In figure, description of reference numerals is as follows:
1: variable resistance unit
2: top electrode
3: bottom electrode
4: tungsten
5: variable resistance material
Embodiment
Understand for technology contents of the present invention, feature and effect being had more specifically, existing in conjunction with illustrated execution mode, details are as follows:
The preparation method of tungsten oxide variable resistance material in the resistance-variable storing device of the present embodiment, its concrete technological process is as follows:
Chemico-mechanical polishing for step 3. (CMP) method polishes the tungsten on IMD surface, and the tungsten in through hole is projection a little, as shown in Fig. 3 (2).
The process conditions of this step are as follows: 400～500 ℃ of temperature, flow 3000～5000sccm, power 300～450W, time 100s～500s.
Step 6. is made top electrode, forms RRAM region, as shown in Fig. 3 (5).
The WOx(that adopts POP to prepare is shown in Fig. 4) still possess its character of changing of resistence, it is (bottom electrode ground connection, top electrode biasing high voltage) in the time of the higher forward voltage in outside, there will be high resistant characteristic.When opposite direction is in the time carrying out negative sense bias voltage to it (bottom electrode connects high potential, top electrode ground connection), there will be low resistance characteristic.
But the WOx preparing with POP, the oxygen content of its upper surface is improved.Fig. 5 is that the WOx variable resistance material prepared by the POP method of traditional RTO method and the present embodiment is respectively through XPS(X ray photoelectron spectroscopic analysis) process the W, the O ratio that obtain and change schematic diagram.Wherein, WOx prepared by RTO, the content of its surface oxygen only has 60%～65%; And WOx prepared by PECVD, the content of its Surface Oxygen reaches 75%.The lifting of the content of WOx upper surface oxygen, the initial resistance that makes variable resistance unit is increased to several thousand to ohm up to ten thousand by former tens ohm, greatly reduce the electric current of circuit operation, thereby the overall power of memory is reduced, domain wiring is optimized, and the memory capacity of entirety is improved greatly.
Claims (4)
1. the preparation method of tungsten oxide variable resistance material in resistance-variable storing device, is characterized in that, adopts plasma reinforced chemical vapour deposition method to be oxidized tungsten surface, prepares described tungsten oxide variable resistance material.
2. method according to claim 1, is characterized in that, the gas source of plasma reinforced chemical vapour deposition is oxygen.
3. method according to claim 2, is characterized in that, the process conditions of plasma reinforced chemical vapour deposition are: 400～500 ℃ of temperature, gas flow 3000～5000sccm, power 300～450W, time 100～500s.
4. the method described in any one according to claims 1 to 3, is characterized in that, the thickness of described tungsten oxide variable resistance material is about
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226183A (en) * | 2015-10-20 | 2016-01-06 | 福州大学 | A kind of resistance-variable storing device and improve the method for its positive negative sense difference between current |
| CN106098937A (en) * | 2016-08-22 | 2016-11-09 | 电子科技大学 | A kind of Cement Composite Treated by Plasma prepares the method for metal-oxide film resistance-variable storing device |
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| CN101174672A (en) * | 2006-10-04 | 2008-05-07 | 旺宏电子股份有限公司 | Storage cell and its manufacturing process |
| CN101894911A (en) * | 2010-07-13 | 2010-11-24 | 复旦大学 | Preparation method of resistance type memory with high data retention ability |
| US20110189819A1 (en) * | 2007-07-20 | 2011-08-04 | Macronix International Co., Ltd. | Resistive Memory Structure with Buffer Layer |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101159312A (en) * | 2006-10-04 | 2008-04-09 | 旺宏电子股份有限公司 | Memory cell device with circumferentially-extending memory element |
| CN101174672A (en) * | 2006-10-04 | 2008-05-07 | 旺宏电子股份有限公司 | Storage cell and its manufacturing process |
| US20110189819A1 (en) * | 2007-07-20 | 2011-08-04 | Macronix International Co., Ltd. | Resistive Memory Structure with Buffer Layer |
| CN101894911A (en) * | 2010-07-13 | 2010-11-24 | 复旦大学 | Preparation method of resistance type memory with high data retention ability |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226183A (en) * | 2015-10-20 | 2016-01-06 | 福州大学 | A kind of resistance-variable storing device and improve the method for its positive negative sense difference between current |
| CN105226183B (en) * | 2015-10-20 | 2018-10-30 | 福州大学 | A kind of resistance-variable storing device and the method for improving its positive negative sense current difference |
| CN106098937A (en) * | 2016-08-22 | 2016-11-09 | 电子科技大学 | A kind of Cement Composite Treated by Plasma prepares the method for metal-oxide film resistance-variable storing device |
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Application publication date: 20140514 |